JPH0897110A - Bonding device - Google Patents

Abstract

PURPOSE: To bond a substrate to the entire surface of an adhesion surface with a uniform stress and bond flat plates over the entire surface by operating fluid press to a flexible film where the substrate is placed and press the substrate and another substrate to be bonded with pressure generated at the flexible film. CONSTITUTION: By opening a vacuum exhaust valve 54, Si substrate 4 is fixed to an upper pedestal 15. Then, the upper pedestal 15 is closed and the upper pedestal 15 is fixed to a lower pedestal 14 with an upper pedestal fixing screw 56. Then, a fluid introducing valve 44 is opened and nitrogen gas is introduced through a fluid introduction hole 23 to inflate a membrane 7. Si substrate 1 and Si substrate 4 approach each other and begin to contact each other due to the inflation of the membrane 7. Further, when the pressure of nitrogen gas is increased using a pressure control valve and is set to 5kg/cm<2> , the Si substrate 1 and Si substrate 4 are subjected to uniform press force over the entire surface and begin to be bonded to each other.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding device, and more particularly to a bonding device for bonding substrates to each other.

[0002]

2. Description of the Related Art Bonding between solid phases by abutting surfaces is an essential technology for micromachine fabrication as a bonding method with high dimensional accuracy. As for solid-phase bonding, one bonding material is processed into a hemispherical surface and the other bonding material is processed into a flat surface, as seen in the literature (Journal of the Japan Institute of Metals, Vol. 46, No. 9, 1982, p. 935). In addition, the bonding surface was cleaned and then a bonding load was applied to bond the surfaces.

[0003]

However, the above-mentioned conventional example has the following problems because it is necessary to process one joint surface into a hemispherical shape. (1) It is necessary to process the bonding surface into a hemispherical shape. (2) The plane and the hemisphere start with point contact, and in order to further expand the contact area, that is, the bonding area, the amount of plastic deformation of the bonding material must be increased by increasing the applied load. Therefore, it is difficult to join materials that do not undergo plastic deformation. (3) Bonding between flat substrates is difficult.

On the other hand, the same applies to a case where a flat object to be adhered is attached to a member that has been spherically processed in advance by electrostatic attraction or a vacuum chuck, that is, when one surface to be adhered has a hemispherical shape. Therefore, stress concentration is likely to occur, and it is difficult to apply a uniform stress over the entire bonding surface. Further, there is a problem that it is difficult to process the member into a spherical shape.

[0005]

The bonding apparatus of the present invention comprises a flexible film on which a substrate is placed, and means for applying a fluid pressure to the flexible film. The substrates are adhered to each other by pressurizing the substrate with another substrate to be adhered by the generated pressure.

In the above-mentioned bonding apparatus of the present invention, the entire bonding surface is bonded by fluid pressure without stress concentration.
It is possible to bond the entire bonding surface with a uniform stress, and it is possible to bond the flat plates to each other over the entire surface. Hereinafter, the configuration of the bonding apparatus of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic view of the bonding apparatus of the present invention.
This device holds the first substrate 4 flat and holds the fluid introduction hole 2
Fluid pressurized from 3 (either liquid or gas is acceptable)
Is introduced, and the two substrates are brought close to each other while applying the fluid pressure to the back surface of the second substrate 1. In the apparatus of FIG. 1, the fluid pressure is applied to the thin membrane 7, and this membrane bends in a hemispherical shape, so that the second substrate 1 in contact therewith also bends in a hemispherical shape. As the fluid pressure gradually increases, the second substrate 1 further bends, and thus the two substrates are bonded from the central portion. In this bonding method, the atmospheric gas is expelled to the peripheral portion during the bonding process, so that the gas does not remain between the substrates even in the atmosphere. Of course, two substrates may be bonded in vacuum. A fluid pressure of 3 kg / cm ² or more is sufficiently effective.

In the case of room-temperature bonding of Si substrates whose surfaces have been cleaned, sufficient bonding strength was exhibited even in the handling step and they did not deviate from each other. 600 ° C
When the sample after room temperature adhesion was heated in the atmosphere at the temperature of 2 hours for 2 hours, it was confirmed from the interface observation by the infrared camera that the entire surface was adhered. The strength at this time is Si
It was equivalent to the bulk strength of the substrate.

If the substrate to which the present apparatus is applicable is flat, it does not depend on the shape such as a circle or a polygon, and since it is solid-phase adhesion, it does not depend on the material type.

In this experiment, the example of adhesion was a combination of Si / Si, but other combinations such as Si / glass and glass / glass are also possible. That is, if it is a rigid plate-like substrate, it is also possible to bond it by a combination of each of metal, semiconductor and insulator (for example; ceramics, glass, oxide film, nitride film).

On the other hand, the material of the membrane is preferably thin, flexible and has a large elastic range. For example, there is a film made of a polymer material (for example; Teflon, polyethylene, polyimide).

[0012]

Embodiments of the present invention will be described in detail below with reference to the drawings. [Embodiment 1] FIGS. 1 and 2 show a first embodiment of the present invention. FIG. 1 is a sectional view of an adhesive device of the present invention, and FIG.
It is the top view seen from the arrow direction of -A.

In FIGS. 1 and 2, 1 is a Si substrate for bonding, 4 is a Si substrate having a thermal oxide film formed on the other bonding surface, and 7 is for pressing the Si substrate 1 against the Si substrate 4 at the time of bonding. Membrane (pressurizing film) made of a Teflon film, 14 is a lower pedestal for mounting the Si substrate 1 and receiving adhesive pressure during bonding, and 15 is for mounting the Si substrate 4 and receiving bonding pressure during bonding Upper pedestal, 1
6 is a pressing film fixing flange for attaching the pressing film 7 to the lower pedestal 14 and enabling airtightness, 21 is a lower Si substrate holder for mounting the Si substrate 1, 22 is a lower pedestal for the lower Si substrate holder 21 A substrate holder attaching screw for attaching to 14, a fluid introducing hole 23 for introducing a fluid pressure for applying a pressure to the pressure applying film 7 at the time of adhesion,
30 is a fluid introduction port connected to the fluid introduction hole 23,
37 is a fluid introduction pipe connected to the fluid introduction port 30;
Reference numeral 44 is a fluid introduction valve for applying pressure to the membrane 7 or stopping it (note that the tip of this fluid introduction valve is not shown, but it is connected to a nitrogen storage pressure cylinder through a pressure regulating valve). , 51 is a vacuum exhaust hole for attaching the Si substrate 4 to the upper pedestal 15 by vacuum suction, 52 is a vacuum exhaust port connected to the vacuum exhaust hole 51, and 53 is connected to the vacuum exhaust port 52. A vacuum exhaust pipe, 54 is a vacuum exhaust valve for attaching and detaching the Si substrate 4 to and from the upper pedestal 15 (note that the end of this vacuum exhaust valve is not shown, but is connected to a vacuum pump), and 55 is a Si substrate. When attaching 4 to the upper pedestal 15, the upper pedestal 1
An upper pedestal rotation shaft when rotating and opening 5 is provided, and 56 is an upper pedestal fixing screw for connecting the upper pedestal 15 to the lower pedestal 14 after attaching the Si substrate 4 to the upper pedestal 15.

Next, the operation of the bonding apparatus having the above structure will be described. First, the Si substrates 1 and 4 are washed with a dilute hydrofluoric acid, hydrochloric acid, and hydrogen peroxide solution, rinsed with pure water, and then it is confirmed that no dust is attached to the adhesive surface. Is removed and the upper pedestal 15 is opened while being rotated around the upper pedestal rotation shaft 55. And
The substrate holder mounting screw 22 is removed, the lower Si substrate holder 21 is further removed, and the bonding Si substrate 1 is attached to the lower Si substrate holder 21 (see the lower Si substrate 1 as shown in FIG. 1).
The adhesive Si substrate 1 is set in the groove of the substrate holder 21, and then the adhesive Si substrate 1 is fixed to the lower Si substrate holder 21 with an adhesive tape using the non-adhesive surface of the adhesive Si substrate 1. Not shown. ), Then board holder mounting screw 2
At step 2, the lower Si substrate holder 21 is fixed to the lower pedestal 14. Further, the bonding Si substrate 4 is set on the upper pedestal 15 which is being opened, and then the vacuum exhaust valve 54 is opened to fix the Si substrate 4 to the upper pedestal 15. Then, close the upper pedestal 15 and replace the upper pedestal 15 with the lower pedestal 1 as shown in FIG.
It is fixed to 4 with the upper pedestal fixing screw 56. At this time, the distance between the Si substrate 1 and the Si substrate 4 is kept to be about 50 μm. Next, the fluid introducing valve 44 is opened and nitrogen gas is introduced through the fluid introducing hole 23 to expand the membrane 7. Due to the expansion of the membrane 7, the Si substrate 1 and the Si
The substrates 4 approach each other and start contacting each other. Then, when the pressure of the nitrogen gas is further increased by using a pressure regulating valve (not shown) and the pressure is set to 5 kg / cm ² , the Si substrate 1 and the Si substrate 4 exert a uniform pressing force over the entire surface. received,
Start to bond. According to this method, the Si substrates 1 and 4 are bonded to each other along the outer peripheral portion in the radial direction from the central portion, and as a result, it is possible to bond the entire surfaces without generating bubbles. Further, the adhered Si substrate was removed, and the adhered Si substrate was heated in a temperature range of 300 ° C. to 850 ° C. (2 hr. In air), and an interfacial fracture shear stress of 50 kg / cm ² or more was obtained at a heating temperature of 750 ° C. (Fig. 2
5).

In this experiment, slippage due to slippage at the adhesive interface was not observed. That is, the Si substrate 1,
No. 4 was firmly adhered as if it were an integral bulk material.

In the present invention, it is desirable that the bonding pressure applied between the materials to be bonded is uniform over the entire bonding surface and has a value as large as possible. Therefore membrane 7
Is as flexible as possible and it is desirable that the membrane be as thin as possible, and in order to prevent the membrane from bursting when pressurized by introducing a fluid, make the gap between the lower and upper pedestals as small as possible. Is desirable.

As the gap is gradually reduced,
It is possible to increase the pressure of the fluid acting on the membrane 7 as much as possible, which is desirable in order to reach the distance between the adherends to the distance where the attractive force between atoms acts.

In this experiment, a Teflon film was used as the membrane, but a polyimide or polyethylene film may be used instead of the Teflon film, and the intention of the present invention does not change at all. [Embodiment 2] FIGS. 3, 4, 5, 6, 7, 8 and 9 show a second embodiment of the present invention, and FIG. 3 is a cross-sectional view and a substrate of an adhesive device of the present invention. Schematic view of the observation part, Fig. 4 B of Fig. 3
-B is a plan view as seen from the direction of the arrow, FIG. 5 is a plan view as seen from the direction of the arrow CC of FIG. 3, and FIGS. 6 to 9 are sectional views showing the form of the device in the order of bonding.

1 to 9, 1 is a Si substrate for bonding, 4 is another Si substrate for bonding, 7, 8, 9, 1
0 is a membrane made of a Teflon film for pressing the Si substrate 1 against the Si substrate 4 at the time of bonding, and 14 is Si
A lower pedestal for mounting the substrate 1 and receiving the bonding pressure at the time of bonding, 15 an upper pedestal for mounting the Si substrate 4 and receiving the bonding pressure at the time of bonding, 16, 17, 18, 1
9 is the lower pedestal 1 with the membranes 7, 8, 9 and 10 respectively
4, a membrane fixing flange for enabling airtightness, and 20 a membrane fixing flange 16, 1.
Membrane fixing flange fixing screws for fixing 7, 18, 19 to the lower pedestal 14, and 23, 24, 25, 26 are fluid pressures for applying pressure to the membranes 7, 8, 9, 10 respectively at the time of bonding. Fluid introduction holes for introduction, 30, 31, 32, and 33 are fluid introduction holes 2 respectively
Fluid inlet port connected to 3, 24, 25, 26,
37, 38, 39, 40 are fluid introduction ports 3 respectively
Fluid introduction pipe connected to 0, 31, 32, 33, 4
4, 45, 46, 47 are membranes 7, 8, respectively
Fluid introduction valves for applying or stopping pressure to 9 and 10 (note that the tip of these fluid introduction valves is not shown, but through the pressure regulating valve to the nitrogen storage pressure cylinder) , 51 is a vacuum exhaust hole for attaching the Si substrate 4 to the upper pedestal 15 by vacuum suction, 52 is a vacuum exhaust port connected to the vacuum exhaust hole 51, and 53 is connected to the vacuum exhaust port 52. The vacuum exhaust pipe 54 is a vacuum exhaust valve for attaching and detaching the Si substrate 4 to and from the upper pedestal 15 (note that the tip of the vacuum exhaust valve is not shown, but is connected to a vacuum pump), and 55 is Si.
When the substrate 4 is attached to the upper pedestal 15, the upper pedestal rotating shaft when rotating and opening the upper pedestal 15 is attached. 56 is the upper pedestal 1 attached to the lower pedestal 14 after the Si substrate 4 is attached to the upper pedestal
An upper pedestal fixing screw for connecting 5 is an infrared ray for checking whether the Si substrate 1 and the Si substrate 4 are adhered to each other at room temperature pressure contact, 58 is a lower pedestal 14 and the membranes 7, 8, 9 , 10 and the Si substrates 1, 4 and the upper pedestal 15 receive an IR camera 57 for receiving the infrared light 57, 59 is a television for monitoring the image obtained by the IR camera 58, 60 is an IR camera 58 and a television 59. It is a cable that electrically connects between and.

Next, the operation of the bonding apparatus having the above structure
explain. First, the Si substrate 1 and the Si substrate 4 were used as in Example 1.
After washing in the same manner and rinsing with pure water, dust on the adhesive surface.
Check that there is no adhesive on the top pedestal fixing
Remove the top 56 and rotate the upper pedestal 15 to rotate the upper pedestal rotating shaft 55.
Open while rotating. Then, the bonding Si substrate 1
Set it above the lower pedestal 14 as shown in FIG.
After setting the bonding Si substrate 4 on the upper pedestal 15, vacuum exhaust
The air valve 54 is opened and the Si substrate 4 is vacuum-adsorbed.
It is fixed to the upper pedestal 15. Then close the upper pedestal 15,
As shown in FIG. 3, the upper pedestal 15 is attached to the lower pedestal 14 and the upper pedestal is attached.
Fix with the fixing screw 56. At this point, Si substrate 1 and Si
The gap with the substrate 4 is kept to be about 50 μm.
It Next, the fluid introducing valve 44 is opened to open the fluid introducing hole 23.
Nitrogen gas is introduced through the membrane to expand the membrane 7.
As shown in FIG. 5, this membrane 7 is made of the adhesive Si substrate 1.
Since it is located in the center,
As shown in FIG. 6, the bonding Si substrate 1 and the Si substrate 4 are
They approach each other and start contacting at the center. And further
Increase the pressure of nitrogen gas using a pressure control valve (not shown)
5kg / cm²When set to, Si substrate 1 and S
The i-boards 4 are pressed against each other at the center parts and start to bond.
It Next, the fluid introducing valve 45 is opened to open the fluid introducing hole 24.
Nitrogen gas is introduced through the membrane to expand the membrane 8.
As shown in FIG. 5, this membrane 8 is made of the Si substrate 1 for adhesion.
Because the shape of the donut is concentric with the center,
As shown in FIG. 7, due to the swelling of Blen 8, the Si substrate for adhesion
1 and the Si substrate 4 are pressed by the bulge of the membrane 8.
And, as above, nitrogen gas pressure 5 kg / c
m ²I started to bond with. But still introducing nitrogen gas
Si substrate 1 located on non-membranes 9 and 10
Adhesion did not sufficiently occur at the interfaces of 4 and 4. And then
The fluid introducing valve 46 is opened to pass through the fluid introducing hole 25.
Nitrogen gas is introduced to expand the membrane 9. This Men
As shown in FIG. 5, the blend 9 is formed on the central portion of the bonding Si substrate 1.
On the other hand, the membrane 9 has a concentric donut shape.
As shown in FIG. 8, the swelling of the Si substrate 1 for bonding and S for bonding
The i substrate 4 receives a pressing force at the bulging portion of the membrane 9,
And in the same manner as above, the nitrogen gas pressure is 5 kg / cm.²Contact with
I started to wear it.

However, sufficient adhesion does not occur at the interface between the Si substrates 1 and 4 located on the membrane 10 to which nitrogen gas has not yet been introduced. Then, the fluid introducing valve 47 is opened and nitrogen gas is introduced through the fluid introducing hole 26 to expand the membrane 10. This membrane 10
As shown in FIG. 5, since the adhesive Si substrate 1 is concentric with the center of the adhesive Si substrate 1, the expansion of the membrane 10 causes the adhesive Si substrate 1 and the Si substrate 4 to have A pressing force was applied to the bulging portion of the membrane 10, and adhesion was started at a nitrogen gas pressure of 5 kg / cm ² as in the above.

In this bonding process, the Si substrates 1 and 4 are bonded to each other from the central portion, and are gradually moved in the radial direction, that is, in the circumferential direction. , 45, 46, 47
We opened one by one and went. However, if the monitor television 59 shows that the Si substrates 1 and 4 are not adhered to each other at the membrane portion even if the membrane expands when the pressure introducing valve is opened, A pressure adjusting valve (not shown) communicating with the membrane is adjusted so that the pressure becomes large. After confirming that the entire surface is adhered by such a method, the temperature of 300 ° C ~
When heat-treated at 850 ° C. (2 hr., In air), S
A breaking strength similar to that of the i bulk material was obtained. (Embodiment 3) FIGS. 10, 11, 12, 13 and 1
4, FIG. 15, FIG. 16, FIG. 17, FIG. 18, and FIG. 19 show a third embodiment of the present invention, FIG. 10 is a sectional view of a bonding apparatus of the present invention and a schematic view of a substrate observing part, and FIG. DD of FIG.
12 is a plan view seen from the arrow direction of FIG. 12, and FIG. 12 is a plan view seen from the arrow direction of EE of FIG. 13 to 19 are cross-sectional views showing the configuration of the device in the order of bonding.

In FIGS. 10 to 19, reference numeral 1 denotes Si for adhesion.
Substrate 4 is the other Si substrate for adhesion, 7, 8, 9,
10, 11, 12, and 13 are Si substrates 1 at the time of bonding, respectively.
A membrane made of a Teflon film for pressing the Si substrate 4 to the Si substrate 4, 14 is a lower pedestal for mounting the Si substrate 1 and receiving adhesive pressure at the time of bonding, 15 is the Si substrate 4 for mounting the adhesive pressure at the time of bonding An upper pedestal for receiving,
Reference numeral 16 is a membrane fixing flange for attaching the pressurizing membranes 7, 8, 9, 10, 11, 12, 13 to the lower pedestal 14 and enabling airtightness, and 20 is fixing the membrane fixing flange 16 to the lower pedestal 14. Membrane fixing flange set screw for 23, 24, 25, 26, 27, 2
8 and 29 are membranes 7, 8, 9 and
Fluid introduction holes for introducing fluid pressure to apply pressure to 10, 11, 12, 13; 30, 31, 32, 3
3, 34, 35 and 36 are fluid introduction holes 23 and 2 respectively.
4, 25, 26, 27, 28, 29, fluid introduction port, 37, 38, 39, 40, 41, 42, 4
3 are fluid introduction ports 30, 31, 32, 33, respectively.
Fluid introduction pipes connected to 34, 35 and 36, 44 and 4
5, 46, 47, 48, 49, and 50 are fluid introduction valves for applying pressure to the membranes 7, 8, 9, 10, 11, 12, 13 and stopping them (note that these fluids are not used). Although the tip of the introduction valve is not shown, it is connected to a nitrogen storage pressure cylinder through a pressure control valve.), 51 is a vacuum exhaust hole for attaching the Si substrate 4 to the upper pedestal 15 by vacuum adsorption, and 52 is The vacuum exhaust port connected to the vacuum exhaust hole 51, 53 the vacuum exhaust pipe connected to the vacuum exhaust port 52, 54 the Si substrate 4
A vacuum exhaust valve for attaching and detaching the
Although not shown, the tip of this vacuum exhaust valve communicates with a vacuum pump. ), 55 is the Si substrate 4 on the upper pedestal 15
When the upper pedestal 15 is attached to the upper pedestal 15, the upper pedestal rotation shaft 56 is used when the upper pedestal 15 is rotated and opened and closed. At room temperature pressure contact, Si substrate 1 and S
Infrared light for checking whether or not the i-substrate 4 is adhered to each other, 58 is the lower pedestal 14 and the pressure films 7, 8, 9, 1
An IR camera that receives infrared light 57 that has passed through 0, 11, 12, 13 and the Si substrates 1, 4 and the upper pedestal 15.
59 is a television for monitoring the image obtained by the IR camera 58, 6
Reference numeral 0 is a cable that electrically connects the IR camera 58 and the television 59.

Next, the operation of the bonding apparatus having the above structure will be described. First, Si substrate 1 (rectangular Si substrate)
And cleaning the Si substrate 4 (rectangular Si substrate),
After further rinsing with pure water, after confirming that no dust adheres to the adhesive surface, remove the upper pedestal fixing screw 56,
The upper pedestal 15 is opened while rotating around the upper pedestal rotation shaft 55. Then, the bonding Si substrate 1 is set above the lower pedestal 14 as shown in FIG. 10, and one bonding Si substrate 4 is set on the upper pedestal 15, and then the vacuum exhaust valve 5
4 is opened and the Si substrate 4 is attached to the upper base 1 by vacuum suction.
Fix at 5. Then, the upper pedestal 15 is closed, and as shown in FIG. 10, the upper pedestal 15 is fixed to the lower pedestal 14 with the upper pedestal fixing screw 56. At this time, the gap between the Si substrate 1 and the Si substrate 4 is kept to be about 50 μm.

Next, the fluid introducing valve 44 is opened and nitrogen gas is introduced through the fluid introducing hole 23 to expand the membrane 7. This membrane 7 is an adhesive S as shown in FIG.
Since it is located at the end of the i substrate 1, the swelling of the membrane 7 causes the Si substrate 1 for bonding and the S substrate for bonding as shown in FIG.
The i-substrates 4 approach each other and start contacting at the edges first. Then, when the pressure of nitrogen gas is further increased by using a pressure regulating valve (not shown) and set to 5 kg / cm ² , S
The i-substrate 1 and the Si-substrate 4 are pressed against each other at their ends and start to adhere to each other. Next, the fluid introducing valve 45 is opened and nitrogen gas is introduced through the fluid introducing hole 24 to expand the membrane 8. This membrane 8 is an adhesive S as shown in FIG.
Since it is located at the second position from the end of the i substrate 1, the swelling of the membrane 8 causes the bonding Si substrate 1 and the Si substrate 4 to be the bulging portion of the membrane 8. Received a pressing force, the same as above, nitrogen gas pressure 5k
Adhesion started at g / cm ² . However, no adhesion occurs at the interface between the Si substrates 1 and 4 located on the membranes 9, 10, 11, 12, and 13 to which nitrogen gas has not yet been introduced. Further, in the same manner as above, the fluid introduction valve 46,
When opening 47, 48, 49, 50 in order, S
The i substrate 1 and the Si substrate 4 are sequentially provided with the pressurizing films 9, 10, 1
Pressing force is applied by the bulges 1, 12, 13 and, as shown in FIG. 15, FIG. 16, FIG. 17, FIG. 18, and FIG. 19, the adhesion progresses from one end to the other end. Then, it was confirmed on the monitor television 59 that the entire surface was bonded. After this room-temperature pressure welding, a rupture strength test was conducted on a sample heated (2 hr., In air) over a temperature range of 300 ° C. to 850 ° C. As a result, the same strength as a bulk Si wafer was obtained. The Si substrate used in this experiment had its surface cleaned in advance. [Embodiment 4] FIGS. 20, 21, and 22 show a fourth embodiment of the present invention, FIG. 20 is a partial cross-sectional view showing an adhesive device of the present invention, and FIG. 22 is a plan view seen from the arrow direction of FIG. 22, and FIG. 22 is a plan view seen from the arrow direction of GG of FIG.

20 to 22, reference numeral 1 denotes Si for adhesion.
Substrates 2 and 3 are grooves made of a thin film formed on the Si substrate 1 by anisotropic etching, and 4 is the other bonding S.
i substrates 5, 5 and 6 are grooves made of a thin film formed on the Si substrate 4 by anisotropic etching, 7, 8, 9, 10, 1
Reference numeral 1 denotes a membrane made of a Teflon film for pressing the Si substrate 1 against the Si substrate 4 at the time of bonding, and 14 denotes Si.
An upper pedestal for mounting the substrate 1 and receiving an adhesive pressure at the time of bonding, 15 an upper pedestal for mounting the Si substrate 4 and receiving an adhesive pressure at the time of bonding, 16 a membrane 7,
8, 9, 10 and 11 are attached to the lower pedestal 14 and a membrane fixing flange for enabling airtightness, 20 is a membrane fixing flange set screw for fixing the pressure fixing flange 16 to the lower pedestal 14, 23, 24, 2
Reference numerals 5 and 26 are fluid introduction holes similar to those in the second and third embodiments, and the ends of these fluid introduction holes pass through a fluid introduction valve and a pressure regulating valve, respectively, and a nitrogen storage pressure cylinder (neither is shown). It leads to.

Next, the operation of the bonding apparatus having the above structure will be described. First, the Si substrate 1 and the Si substrate 4 were washed in the same manner as in Example 1, further rinsed with pure water, and after confirming that dust was not attached to the adhesive surface, the lower pedestal 14 and the upper pedestal 15 were respectively attached. Attach (same as in Examples 2 and 3). Next, in the pressing step, the membranes 8 and 10 are not expanded so as not to destroy the thin films forming the grooves 2 and 3, and the pressure films 7, 9 and 11 are expanded in sequence as shown in FIG. No (the same method as in Examples 2 and 3 is used). still,
Although not shown, as in Examples 2 and 3, pressure was applied to the membranes 7, 9 and 11 while observing an image of transmitted infrared light taken by an IR camera on a monitor TV. After the above-mentioned bonding, the bonded sample is heated at a temperature of 300 ° C to
When heated (2 hr.) In the range of 850 ° C., the breaking strength equivalent to that of the Si wafer could be obtained. In the case of this embodiment, after setting the Si substrates 1 and 4 in the apparatus, the entire apparatus was set to 10 ^-1 Torr. It was done under reduced pressure.

In the above embodiment, it becomes possible to easily manufacture an airtight capsule.

As shown in FIG. 23, the membranes 7, 8,
Even when the material of 9 was glass and the lower pedestal 14 was a Si substrate, the same adhesion as above was possible. In this case, the lower pedestal 14 made of the Si substrate is etched to form the cross section shown in FIG. 23, and then the lower pedestal 14 and the membranes 7, 8, 9 made of glass are joined together by anodic bonding. .

On the other hand, as shown in the sectional view of FIG. 24, the Si substrate having the membranes 7, 8 and 9 formed by etching is bonded to the lower pedestal 14 made of a glass material by anodic bonding. Even in the case of equipment,
The same adhesion as above was possible.

[0031]

As described above, the bonding apparatus of the present invention enables bonding with uniform stress over the entire bonding surface without causing stress concentration, as compared with the prior art, and flat plates are bonded to each other. It is possible to bond Si substrates. By using this device, alignment during bonding can be facilitated, Si substrates after element formation can be bonded, and selective bonding is possible, which is effective for forming a three-dimensional structure such as a micromachine. It provides the means.

[Brief description of drawings]

FIG. 1 is a sectional view of a bonding apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view seen from the direction of arrow AA in FIG.

FIG. 3 is a cross-sectional view of a bonding apparatus according to a second embodiment of the present invention and a schematic view of a substrate observing section.

FIG. 4 is a plan view seen from the arrow direction of BB in FIG.

5 is a plan view as seen from the direction of the arrows CC in FIG.

FIG. 6 is a cross-sectional view showing a form in a bonding order according to a second embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a form in a bonding order according to a second embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a form in the order of bonding according to the second embodiment of the present invention.

FIG. 9 is a cross-sectional view showing a form in the order of bonding according to the second embodiment of the present invention.

FIG. 10 is a cross-sectional view of a bonding apparatus according to a third embodiment of the present invention and a schematic view of a substrate observing section.

11 is a plan view seen from the direction of the arrow D-D in FIG.

12 is a plan view as seen from the direction of arrow EE in FIG.

FIG. 13 is a cross-sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 14 is a cross-sectional view showing a form in the order of adhesion according to the third embodiment of the present invention.

FIG. 15 is a cross-sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 16 is a cross-sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 17 is a cross-sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 18 is a cross-sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 19 is a cross-sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 20 is a partial cross-sectional view showing a bonding device according to a fourth embodiment of the present invention.

FIG. 21 is a plan view seen from the arrow direction of FF in FIG. 20.

22 is a plan view seen from the direction of the arrows G-G in FIG. 20. FIG.

FIG. 23 is a cross-sectional view showing the form of a membrane.

FIG. 24 is a cross-sectional view showing the form of a membrane.

FIG. 25 is an interfacial shear stress diagram at the time of failure calculated from bending strength.

[Explanation of symbols]

 1 Si substrate 2 groove 3 groove 4 Si substrate 5 groove 6 groove 7 to 13 membrane (pressurizing film) 14 lower pedestal 15 upper pedestal 16 to 19 membrane fixing flange 20 membrane fixing flange set screw 21 lower Si substrate holder 22 substrate holder mounting Screws 23-29 Fluid introduction hole 30-36 Fluid introduction port 37-43 Fluid introduction pipe 44-50 Fluid introduction valve 51 Vacuum exhaust hole 52 Vacuum exhaust port 53 Vacuum exhaust pipe 54 Vacuum exhaust valve 55 Upper pedestal rotating shaft 56 Upper pedestal fixed Screw 57 infrared light 58 IR camera 59 TV 60 cable

Claims (10)

[Claims] 1. A flexible film on which a substrate is placed, and means for exerting a fluid pressure on the flexible film, the pressure being applied to the flexible film to bond the substrate. A bonding apparatus in which the substrates are bonded to each other by applying pressure to the substrates. 2. The bonding apparatus according to claim 1, wherein a plurality of flexible films are provided on one substrate. 3. The adhesive device according to claim 2, wherein the flexible films are arranged in parallel or in a matrix. 4. The adhesive device according to claim 2, wherein a means for applying a fluid pressure to the flexible film is provided for each of the plurality of flexible films. . 5. The adhesive device according to claim 4, wherein the means for exerting a fluid pressure on the flexible membrane includes a fluid flow passage acting to generate an adhesive pressure on the flexible membrane. An adhesive device comprising means for individually opening and closing each flow path, and controlling the pressure applied to each flexible membrane by the opening and closing means. 6. The bonding apparatus according to claim 4, wherein only the means for applying a fluid pressure to the flexible film, which corresponds to a desired position on the substrate to be bonded, is operated. apparatus. 7. The bonding device according to claim 1, wherein the flexible film is made of a material that is transparent to infrared light. apparatus. 8. The adhesive device according to claim 7, wherein the support receiving the adhesive pressure by the means for exerting a fluid pressure on the flexible film as a reaction force is made of a material transparent to infrared light. An adhesive device characterized by being formed. 9. The bonding apparatus according to claim 7, wherein the substrate to be bonded is irradiated with infrared light, and the bonding state is based on the infrared light transmitted through the substrate. And a means for controlling the fluid pressure according to this adhesion state. 10. The bonding device according to claim 7, wherein the bonding means irradiates the substrate to be bonded with infrared light, and the infrared light transmitted through the substrate. And a means for aligning the front substrates with each other.