JP3327698B2 - Bonding equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding apparatus, and more particularly to a bonding apparatus for bonding substrates.

[0002]

2. Description of the Related Art Bonding between solid phases by abutting surfaces is an indispensable technique for fabricating a micromachine as a bonding method having high dimensional accuracy. As shown in the literature (Journal of the Japan Institute of Metals, Vol. 46, No. 9, 1982, p. 935), solid-state joining is performed by processing one joining material into a hemispherical shape and the other joining material into a planar shape. After the joining surface was cleaned, the joining was performed by applying a joining load.

[0003]

However, in the above-mentioned conventional example, it is necessary to process one of the joining surfaces into a hemispherical shape, so that the following problems have been encountered. (1) A hemispherical processing of the joining surface is required. (2) The plane and the hemisphere start at point contact, and in order to further increase the contact area, that is, the bonding area, the amount of plastic deformation of the bonding material must be increased by increasing the applied load. Therefore, it is difficult to join materials that do not undergo plastic deformation. (3) It is difficult to bond between flat substrates.

[0004] On the other hand, the same applies to a case where a flat adherend is adhered to a member which has been processed into a spherical surface in advance by electrostatic suction or a vacuum chuck, that is, one adherend surface is formed in a hemispherical shape. In some cases, stress concentration easily occurs, and it is difficult to apply uniform stress over the entire surface of the bonding surface. Further, there is a problem that it is difficult to process the member into a spherical shape.

[0005]

The bonding apparatus according to the present invention includes a flexible film on which a substrate is placed, and means for applying a fluid pressure to the flexible film. The substrates are bonded to each other by applying pressure to the substrate and another substrate to be bonded with the generated pressure.

[0006] The bonding apparatus of the present invention bonds the entire surface of the bonding surface with a fluid pressure without causing stress concentration.
It is possible to bond with uniform stress over the entire surface of the bonding surface, and to bond the flat plates over the entire surface. Hereinafter, the configuration of the bonding apparatus of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic view of a bonding apparatus according to the present invention.
This device holds the first substrate 4 flat and the fluid introduction hole 2
Fluid pressurized from 3 (either liquid or gas)
And the two substrates are brought close to each other while applying the fluid pressure to the back surface of the second substrate 1. In the apparatus shown in FIG. 1, the fluid pressure is applied to the thin membrane 7, and the membrane bends in a hemispherical shape, so that the second substrate 1 in contact therewith also bends in a hemispherical shape. As the fluid pressure gradually increases, the second substrate 1 further bends, so that the two substrates adhere to each other from the center. In this bonding method, the atmospheric gas is expelled to the peripheral part in the bonding process, so that no gas remains between the substrates even in the air. Of course, the two substrates may be bonded in a vacuum. A fluid pressure of 3 kg / cm ² or more is sufficiently effective.

[0008] In the case of bonding at room temperature between Si substrates whose surfaces have been cleaned, even in the handling step, they exhibited a sufficient bonding strength and did not deviate from each other. 600 ° C
When the sample after room temperature bonding was heated in the atmosphere at the temperature of 2 hours in the atmosphere, it was confirmed from the interface observation with an infrared camera that the entire surface was bonded. The strength at this time is Si
It was equivalent to the bulk strength of the substrate.

If the substrate to which the present apparatus can be applied is a flat plate, it does not depend on the shape such as a circle or a polygon, and does not depend on the material type because it is solid-phase bonded.

[0010] In this experiment, the bonding was performed by the combination of Si / Si, but other combinations such as Si / glass and glass / glass are also possible. That is, as long as the substrate is a rigid plate-like substrate, bonding using a combination of metals, semiconductors, and insulators (for example, ceramics, glass, oxide films, and nitride films) is also possible.

On the other hand, it is desirable that the material of the membrane is thin, flexible and has a large elastic range. For example, there is a film made of a polymer material (for example, Teflon, polyethylene, or polyimide).

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings. [Embodiment 1] FIGS. 1 and 2 show a first embodiment of the present invention. FIG. 1 is a sectional view of a bonding apparatus of the present invention, and FIG.
It is the top view seen from the arrow direction of -A.

In FIGS. 1 and 2, reference numeral 1 denotes a bonding Si substrate, reference numeral 4 denotes a Si substrate having a thermal oxide film formed on the other bonding surface, and reference numeral 7 denotes an Si substrate 1 pressed against the Si substrate 4 during bonding. A membrane (pressing film) made of a Teflon film, 14 is a lower pedestal on which the Si substrate 1 is mounted and receives an adhesive pressure at the time of bonding, and 15 is a lower pedestal which mounts the Si substrate 4 and receives the bonding pressure at the time of bonding. Upper pedestal, 1
Reference numeral 6 denotes a pressurizing film fixing flange for attaching the pressurizing film 7 to the lower pedestal 14 and enabling airtightness, 21 denotes a lower Si substrate holder for mounting the Si substrate 1, and 22 denotes a lower Si substrate holder 21 to the lower pedestal. A substrate holder mounting screw for mounting on the substrate 14; a fluid introduction hole 23 for introducing a fluid pressure for applying pressure to the pressurizing film 7 during bonding;
30 is a fluid introduction port connected to the fluid introduction hole 23,
37 is a fluid introduction pipe connected to the fluid introduction port 30;
Reference numeral 44 denotes a fluid introduction valve for applying or stopping pressure to the membrane 7 (the tip of the fluid introduction valve is not shown, but is passed through a pressure regulating valve to a nitrogen storage pressure cylinder). ), 51 is a vacuum exhaust port for attaching the Si substrate 4 to the upper pedestal 15 by vacuum suction, 52 is a vacuum exhaust port connected to the vacuum exhaust hole 51, and 53 is connected to a vacuum exhaust port 52. A vacuum exhaust pipe 54 is a vacuum exhaust valve for attaching and detaching the Si substrate 4 to and from the upper pedestal 15 (the tip of the vacuum exhaust valve is not shown, but is connected to a vacuum pump), and 55 is a Si substrate. 4 is attached to the upper pedestal 15, the upper pedestal 1
An upper pedestal rotating shaft 56 for rotating and opening the upper pedestal 5 is an upper pedestal fixing screw for connecting the upper pedestal 15 to the lower pedestal 14 after attaching the Si substrate 4 to the upper pedestal 15.

Next, the operation of the above-structured bonding apparatus will be described. First, the Si substrates 1 and 4 are washed with dilute hydrofluoric acid, hydrochloric acid and an aqueous solution of hydrogen peroxide, rinsed with pure water, and after confirming that dust is not adhered to the bonding surface, the upper pedestal fixing screw 56 is removed. And open the upper pedestal 15 while rotating it about the upper pedestal rotation axis 55. And
The substrate holder mounting screw 22 is removed, the lower Si substrate holder 21 is further removed, and the bonding Si substrate 1 is attached to the lower Si substrate holder 21 (as shown in FIG.
The bonding Si substrate 1 is set in the groove of the substrate holder 21, and then the bonding Si substrate 1 is fixed to the lower Si substrate holder 21 with an adhesive tape using the non-bonding surface of the bonding Si substrate 1. Not shown. ), Then the board holder mounting screw 2
In 2, the lower Si substrate holder 21 is fixed to the lower pedestal 14. Further, the bonding Si substrate 4 is set on the open upper pedestal 15, and then the evacuation valve 54 is opened to fix the Si substrate 4 to the upper pedestal 15. Then, the upper pedestal 15 is closed, and as shown in FIG.
4 is fixed with the upper pedestal fixing screw 56. At this time, the distance between the Si substrate 1 and the Si substrate 4 is maintained at about 50 μm. Next, the fluid introduction valve 44 is opened, nitrogen gas is introduced through the fluid introduction hole 23, and the membrane 7 is expanded. The expansion of the membrane 7 causes the Si substrate 1 and Si
The substrate 4 approaches each other and starts to contact. When the pressure of the nitrogen gas is further increased by using a pressure regulating valve (not shown) and the pressure is set to 5 kg / cm ² , the Si substrate 1 and the Si substrate 4 exert a uniform pressing force over the entire surface. received,
Start gluing. According to this method, the Si substrates 1 and 4 adhere to each other along the outer peripheral portion in the radial direction from the center portion, and as a result, it is possible to adhere over the entire surface without generating bubbles. Further, the bonded Si substrate was removed, and the bonded Si substrate was heated in a temperature range of 300 ° C. to 850 ° C. (2 hr. In the atmosphere). At a heating temperature of 750 ° C., an interface breaking shear stress of 50 kg / cm ² or more was obtained. (Figure 2
5).

In this experiment, no displacement due to slip at the bonding interface was observed. That is, the Si substrate 1
No. 4 was firmly adhered as if it were an integral bulk material.

In the present invention, it is desirable that the bonding pressure applied between the materials to be bonded is uniform over the entire bonding surface and is as large as possible. Therefore membrane 7
It is desirable that the membrane is as flexible as possible and as thin as possible. Is desirable.

As the gap is gradually reduced,
It is possible to increase the pressure of the fluid acting on the membrane 7 as much as possible, which is desirable in that the distance between the adherends reaches the distance at which the atomic attractive force acts.

In this experiment, a Teflon film was used for the membrane, but a polyimide or polyethylene film may be used instead of the Teflon film, and the intention of the present invention is not changed at all. [Embodiment 2] FIGS. 3, 4, 5, 6, 7, 8, and 9 show a second embodiment of the present invention, and FIG. 3 is a sectional view of a bonding apparatus and a substrate of the present invention. FIG. 4 is a schematic diagram of the observation unit, and FIG.
FIG. 5 is a plan view as seen from the direction of arrows CC in FIG. 3, and FIGS. 6 to 9 are cross-sectional views showing the configuration of the device in the order of bonding.

1 to 9, reference numeral 1 denotes a bonding Si substrate, 4 denotes another bonding Si substrate, and 7, 8, 9, 1
Reference numeral 0 denotes a membrane made of a Teflon film for pressing the Si substrate 1 against the Si substrate 4 during bonding, and 14 denotes a Si membrane.
A lower pedestal 15 for mounting the substrate 1 and receiving an adhesive pressure at the time of bonding, and an upper pedestal 15 for mounting the Si substrate 4 and receiving an adhesive pressure at the time of bonding.
9 is the lower pedestal 1 with membranes 7, 8, 9 and 10, respectively.
4 and a membrane fixing flange for allowing airtightness, 20 is a membrane fixing flange 16, 1
Membrane fixing flange set screws for fixing 7, 18, 19 to the lower pedestal 14, and 23, 24, 25, 26 apply fluid pressure to apply pressure to the membranes 7, 8, 9, 10 respectively at the time of bonding. Fluid introduction holes for introduction, 30, 31, 32, and 33 are fluid introduction holes 2 respectively.
A fluid introduction port connected to 3, 24, 25, 26;
37, 38, 39, and 40 are fluid inlet ports 3 respectively.
Fluid inlet pipes connected to 0, 31, 32, 33;
4, 45, 46, 47 are membranes 7, 8,
Fluid introduction valves for applying or stopping pressure to 9, 10 (note that the ends of these fluid introduction valves are not shown, but through a pressure regulating valve to a nitrogen storage pressure cylinder). ), 51 is a vacuum exhaust port for attaching the Si substrate 4 to the upper pedestal 15 by vacuum suction, 52 is a vacuum exhaust port connected to the vacuum exhaust hole 51, and 53 is connected to a vacuum exhaust port 52. A vacuum exhaust pipe 54 is a vacuum exhaust valve for attaching and detaching the Si substrate 4 to and from the upper pedestal 15 (the tip of the vacuum exhaust valve is not shown, but is connected to a vacuum pump), and 55 is Si.
When the substrate 4 is mounted on the upper pedestal 15, the upper pedestal rotating shaft for rotating and opening and closing the upper pedestal 15 is mounted on the lower pedestal 14 after the Si substrate 4 is mounted on the upper pedestal 15.
The upper pedestal fixing screw 57 for connecting 5, infrared light 57 for checking whether or not the Si substrate 1 and the Si substrate 4 are bonded to each other at the time of normal temperature pressure welding, 58 is the lower pedestal 14 and the membranes 7, 8, 9. , 10 and an IR camera for receiving the infrared light 57 transmitted through the Si substrates 1, 4 and the upper pedestal 15, a television 59 for monitoring the image obtained by the IR camera 58, and a television 60 for the IR camera 58 and the television 59. And a cable for electrically connecting the

Next, the operation of the bonding apparatus having the above configuration will be described.
explain. First, the Si substrate 1 and the Si substrate 4 were compared with the first embodiment.
After washing in the same manner and rinsing with pure water, dust
Make sure that there is no
The upper pedestal 15 is removed by turning the upper pedestal rotating shaft 55.
Open while rotating. Then, the bonding Si substrate 1 is
As shown in FIG. 3, it is set above the lower pedestal 14 and
After setting the bonding Si substrate 4 on the upper pedestal 15,
Open the gas valve 54 and remove the Si substrate 4 by vacuum suction.
It is fixed to the upper pedestal 15. And close the upper pedestal 15,
As shown in FIG. 3, the upper pedestal 15 is replaced with the lower pedestal 14 by the upper pedestal.
It is fixed with fixing screws 56. At this point, the Si substrate 1 and Si
The gap between the substrate 4 and the substrate 4 is maintained to be about 50 μm.
You. Next, the fluid introduction valve 44 is opened and the fluid introduction hole 23 is opened.
Through which nitrogen gas is introduced to inflate the membrane 7.
As shown in FIG. 5, this membrane 7 is
Because it is located in the center, the expansion of the membrane 7
As shown in FIG. 6, the bonding Si substrate 1 and the Si substrate 4
They approach each other and begin to make contact at the center. And further
Increase the pressure of nitrogen gas using a pressure regulating valve (not shown)
Go 5kg / cm^TwoWhen set to, Si substrate 1 and S
The i-substrates 4 receive a pressing force at the center of each other and start bonding.
You. Next, the fluid introduction valve 45 is opened to open the fluid introduction hole 24.
Through which nitrogen gas is introduced to inflate the membrane 8.
As shown in FIG. 5, the membrane 8 is formed on the bonding Si substrate 1.
Since the donut shape is concentric with the center,
As shown in FIG. 7, the Si substrate for bonding is inflated by the inflation of the brane 8.
1 and the Si substrate 4 are pressed at the bulging portion of the membrane 8.
And a nitrogen gas pressure of 5 kg / c as described above.
m ^TwoBegan to adhere. However, still introducing nitrogen gas
Si substrate 1 and membranes 9 and 10
At the interface of Nos. 4 and 4, sufficient adhesion has not occurred. And then
Open the fluid introduction valve 46 and pass through the fluid introduction hole 25
Nitrogen gas is introduced to expand the membrane 9. This men
The bran 9 is located at the center of the bonding Si substrate 1 as shown in FIG.
On the other hand, because of the concentric donut shape, the membrane 9
As shown in FIG. 8, the bonding Si substrates 1 and S
The i-substrate 4 receives a pressing force at the inflated portion of the membrane 9,
Then, similarly to the above, the nitrogen gas pressure is 5 kg / cm.^TwoContact with
I started wearing it.

However, adhesion has not sufficiently occurred at the interface between the Si substrates 1 and 4 located on the membrane 10 to which nitrogen gas has not yet been introduced. Then, the fluid introduction valve 47 is opened, and nitrogen gas is introduced through the fluid introduction hole 26 to expand the membrane 10. This membrane 10
As shown in FIG. 5, the bonding Si substrate 1 and the Si substrate 4 are concentric to the center of the bonding Si substrate 1 as shown in FIG. A pressing force was applied to the inflated portion of the membrane 10, and bonding was started at a nitrogen gas pressure of 5 kg / cm ² as described above.

In this bonding process, the fluid introduction valves 44 are respectively observed while watching the monitor television 59 so that the bonding of the Si substrates 1 and 4 occurs from the center and gradually occurs in the radial direction, that is, the circumferential direction. , 45,46,47
Were sequentially opened. However, if the monitor television 59 shows that the Si substrates 1 and 4 are not adhered to each other at the portion of the membrane even when the membrane expands when the pressure introduction valve is opened, A pressure regulating valve (not shown) communicating with the membrane is adjusted so as to increase the pressure. After confirming that the entire surface is adhered by such a method, a temperature of 300 ° C.
After heat treatment at 850 ° C. (2 hr. In the air), S
The same breaking strength as the i bulk material was obtained. (Embodiment 3) FIG. 10, FIG. 11, FIG. 12, FIG.
4, 15, 16, 17, 18, and 19 show a third embodiment of the present invention. FIG. 10 is a cross-sectional view of a bonding apparatus of the present invention and a schematic view of a substrate observing section. DD of FIG.
12 is a plan view seen from the direction of the arrow EE in FIG. 10. 13 to 19 are sectional views showing the configuration of the device in the order of bonding.

10 to 19, reference numeral 1 denotes a bonding Si.
Substrate 4, 4 is another Si substrate for bonding, 7, 8, 9,
10, 11, 12 and 13 are Si substrates 1 at the time of bonding.
Made of a Teflon film for pressing the Si substrate 4 against the Si substrate 4, a lower pedestal 14 for mounting the Si substrate 1 and receiving an adhesive pressure at the time of bonding, and 15 mounting the Si substrate 4 and reducing the bonding pressure at the time of bonding. Upper pedestal to receive,
Reference numeral 16 denotes a membrane fixing flange for attaching the pressurizing membranes 7, 8, 9, 10, 11, 12, and 13 to the lower pedestal 14 and enables airtightness, and 20 fixes the membrane fixing flange 16 to the lower pedestal 14. Fixing screws for fixing the membrane, 23, 24, 25, 26, 27, 2
At the time of bonding, 8, 29 are membranes 7, 8, 9,
Fluid introduction holes for introducing fluid pressure to apply pressure to 10, 11, 12, and 13, 30, 31, 32, 3
3, 34, 35 and 36 are fluid introduction holes 23 and 2 respectively.
Fluid inlet ports 37, 38, 39, 40, 41, 42, 4 connected to 4, 25, 26, 27, 28, 29;
3 are fluid introduction ports 30, 31, 32, 33,
Fluid introduction pipes connected to 34, 35, 36;
Reference numerals 5, 46, 47, 48, 49, and 50 denote fluid introduction valves for applying or stopping pressure to the membranes 7, 8, 9, 10, 11, 12, and 13, respectively. Although the tip of the introduction valve is not shown, it is connected to a nitrogen storage pressure cylinder through a pressure regulating valve.) 51 is a vacuum exhaust hole for attaching the Si substrate 4 to the upper base 15 by vacuum suction, and 52 is a vacuum exhaust hole. A vacuum exhaust port connected to a vacuum exhaust hole 51, 53 is a vacuum exhaust pipe connected to a vacuum exhaust port 52, 54 is a Si substrate 4
To the upper pedestal 15 (evacuation valve)
Although not shown, the end of the vacuum exhaust valve is connected to a vacuum pump. ), 55 designate the Si substrate 4 as the upper pedestal 15
An upper pedestal rotating shaft for rotating and opening and closing the upper pedestal 15 when mounting the upper pedestal 15, and an upper pedestal fixing screw 56 for connecting the upper pedestal 15 to the lower pedestal 14 after attaching the Si substrate 4 to the upper pedestal 15 At normal temperature pressure welding, Si substrate 1 and S
An infrared light 58 for checking whether or not the i-substrates 4 are bonded to each other. Reference numeral 58 denotes the lower pedestal 14 and the pressure films 7, 8, 9, 1
An IR camera which receives infrared light 57 transmitted through 0, 11, 12, 13 and the Si substrates 1, 4 and the upper pedestal 15;
Reference numeral 59 denotes a television for monitoring an image obtained by the IR camera 58;
A cable 0 electrically connects the IR camera 58 and the television 59.

Next, the operation of the above-structured bonding apparatus will be described. First, Si substrate 1 (rectangular Si substrate)
And the Si substrate 4 (rectangular Si substrate),
Further, after rinsing with pure water, after confirming that dust has not adhered to the bonding surface, remove the upper pedestal fixing screw 56,
The upper pedestal 15 is opened while rotating about the upper pedestal rotation shaft 55. Then, the bonding Si substrate 1 is set above the lower pedestal 14 as shown in FIG. 10, and one bonding Si substrate 4 is set on the upper pedestal 15.
4 is opened and the Si substrate 4 is attached to the upper pedestal 1 by vacuum suction.
Fix to 5. Then, the upper pedestal 15 is closed, and the upper pedestal 15 is fixed to the lower pedestal 14 with the upper pedestal fixing screw 56 as shown in FIG. At this time, the gap between the Si substrate 1 and the Si substrate 4 is maintained to be about 50 μm.

Next, the fluid introduction valve 44 is opened and nitrogen gas is introduced through the fluid introduction hole 23 to expand the membrane 7. As shown in FIG.
Since it is located at the end of the i-substrate 1, the expansion of the membrane 7 causes the bonding Si substrate 1 and S
The i-substrates 4 approach each other and start contacting first at the ends. Then, the pressure of the nitrogen gas was further increased using a pressure regulating valve (not shown), and when the pressure was set to 5 kg / cm ² , S
The i-substrate 1 and the Si substrate 4 receive a pressing force at their ends and start bonding. Next, the fluid introduction valve 45 is opened and nitrogen gas is introduced through the fluid introduction hole 24 to expand the membrane 8. As shown in FIG.
Since it is located at the second position from the end of the i-substrate 1, the expansion of the membrane 8 causes the bonding Si substrate 1 and the Si substrate 4 to be separated by the expansion of the membrane 8 as shown in FIG. Under the pressing force, nitrogen gas pressure 5k
g / cm ² began to adhere. However, no adhesion occurs at the interface between the Si substrates 1 and 4 located on the membranes 9, 10, 11, 12, and 13 into which nitrogen gas has not yet been introduced. Further, the fluid introduction valve 46,
When 47, 48, 49, and 50 are sequentially opened, S
The i-substrate 1 and the Si substrate 4 are sequentially formed with pressure films 9, 10, 1
The pressing force is exerted by the inflation of 1, 12, and 13, and the adhesion progresses from one end to the other as shown in FIG. 15, FIG. 16, FIG. 17, FIG. Then, it was confirmed on the monitor television 59 that the entire surface was adhered. After this normal temperature pressure welding, a sample subjected to a breaking strength test of heating (2 hr. In the air) over a temperature range of 300 ° C. to 850 ° C. was able to obtain a strength equivalent to that of a bulk Si wafer. The surface of the Si substrate used in this experiment was cleaned in advance. [Embodiment 4] FIGS. 20, 21, and 22 show a fourth embodiment of the present invention. FIG. 20 is a partial cross-sectional view showing the bonding apparatus of the present invention. 22 is a plan view as seen from the direction of arrows GG in FIG. 20. FIG.

20 to 22, reference numeral 1 denotes a bonding Si.
Substrates 2, 3 are grooves made of a thin film formed on the Si substrate 1 by anisotropic etching, and 4 is the other bonding S
i-substrates 5, 5 and 6 are grooves made of a thin film formed on the Si substrate 4 by anisotropic etching, 7, 8, 9, 10, 1
Reference numeral 1 denotes a membrane made of a Teflon film for pressing the Si substrate 1 against the Si substrate 4 at the time of bonding, and 14 denotes a Si membrane.
An upper pedestal for mounting the substrate 1 and receiving bonding pressure during bonding, 15 is an upper pedestal for mounting the Si substrate 4 and receiving bonding pressure during bonding, and 16 is a membrane 7,
A membrane fixing flange for attaching 8, 9, 10, 11 to the lower pedestal 14 and enabling airtightness, 20 is a membrane fixing flange set screw for fixing the pressurizing fixing flange 16 to the lower pedestal 14, 23, 24,2
Numerals 5 and 26 denote fluid introduction holes similar to those in Examples 2 and 3, and these fluid introduction holes pass through a fluid introduction valve and a pressure regulating valve, respectively, and a nitrogen storage pressure cylinder (both not shown). Leads to.

Next, the operation of the bonding apparatus having the above configuration will be described. First, the Si substrate 1 and the Si substrate 4 are washed in the same manner as in the first embodiment, and further rinsed with pure water. After that, it is confirmed that dust is not adhered to the bonding surface. Attach (similar to Examples 2 and 3). Next, in the pressing step, the membranes 8 and 10 are not expanded so as not to break the thin films constituting the grooves 2 and 3, and the pressure films 7, 9 and 11 are sequentially expanded as shown in FIG. (The same method as in Examples 2 and 3 is used.) still,
Although not shown, pressure was applied to the membranes 7, 9 and 11 while observing the infrared transmitted light captured by an IR camera on a monitor television, as in Examples 2 and 3. After the above bonding, the bonded sample is heated to a temperature of 300 ° C.
When heating (2 hr.) In the range of 850 ° C., a breaking strength equivalent to that of the Si wafer could be obtained. In the case of the present embodiment, after setting the Si substrates 1 and 4 in the apparatus, the entire apparatus is set to 10 ⁻¹ Torr. This was performed under reduced pressure.

In the above embodiment, an airtight capsule can be easily manufactured.

As shown in FIG. 23, the membranes 7, 8,
When the material of No. 9 was made of glass and the lower pedestal 14 was made of a Si substrate, the same bonding as described above was possible. In this case, the lower pedestal 14 made of the Si substrate forms a cross section shown in FIG. 23 by etching, and then the lower pedestal 14 and the membranes 7, 8, and 9 made of glass are joined to each other by anodic bonding. .

On the other hand, as shown in the cross-sectional view of FIG. 24, the Si substrates having the membranes 7, 8, 9 formed by etching are bonded to the lower pedestal 14 made of a glass material by anodic bonding. Even in the case of equipment,
Adhesion similar to the above was possible.

[0031]

As described above, the bonding apparatus according to the present invention enables bonding with uniform stress over the entire surface of the bonding surface without causing stress concentration, as compared with the conventional one. Adhesion of Si substrate was enabled. By using this device, alignment at the time of bonding is easy, Si substrates after element formation can be joined together, and selective bonding is possible, so it is effective for forming three-dimensional structures such as micromachines. It provides a simple means.

[Brief description of the drawings]

FIG. 1 is a sectional view of a bonding apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view as seen from the direction of arrows AA in FIG. 1;

FIG. 3 is a sectional view of a bonding apparatus according to a second embodiment of the present invention and a schematic view of a substrate observation unit.

FIG. 4 is a plan view as seen from the direction of arrows BB in FIG. 3;

FIG. 5 is a plan view as seen from the direction of arrows CC in FIG. 3;

FIG. 6 is a sectional view showing a form in the order of bonding according to the second embodiment of the present invention.

FIG. 7 is a sectional view showing a form in the order of bonding according to the second embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a form in a bonding order according to the second embodiment of the present invention.

FIG. 9 is a sectional view showing a form in the order of bonding according to the second embodiment of the present invention.

FIG. 10 is a sectional view of a bonding apparatus according to a third embodiment of the present invention and a schematic view of a substrate observation unit.

FIG. 11 is a plan view as seen from the direction of arrows DD in FIG. 10;

FIG. 12 is a plan view seen from the direction of arrows EE in FIG. 10;

FIG. 13 is a sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 14 is a cross-sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 15 is a cross-sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 16 is a sectional view showing a form in the order of bonding in the third embodiment of the present invention.

FIG. 17 is a sectional view showing a form in a bonding order according to the third embodiment of the present invention.

FIG. 18 is a sectional view showing a form in the order of bonding in the third embodiment of the present invention.

FIG. 19 is a sectional view showing a form in the order of bonding according to the third embodiment of the present invention.

FIG. 20 is a partial sectional view showing a bonding apparatus according to a fourth embodiment of the present invention.

FIG. 21 is a plan view as seen from the direction of arrows FF in FIG. 20;

FIG. 22 is a plan view seen from the direction of arrows GG in FIG. 20;

FIG. 23 is a cross-sectional view showing a form of the membrane.

FIG. 24 is a cross-sectional view showing the form of the membrane.

FIG. 25 is an interface shear stress diagram at the time of fracture calculated from bending strength.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Si substrate 2 groove 3 groove 4 Si substrate 5 groove 6 groove 7-13 Membrane (pressure membrane) 14 Lower pedestal 15 Upper pedestal 16-19 Membrane fixing flange 20 Membrane fixing flange set screw 21 Lower Si substrate holder 22 Substrate holder mounting Screw 23-29 Fluid introduction hole 30-36 Fluid introduction port 37-43 Fluid introduction tube 44-50 Fluid introduction valve 51 Vacuum exhaust hole 52 Vacuum exhaust port 53 Vacuum exhaust tube 54 Vacuum exhaust valve 55 Upper pedestal rotation shaft 56 Upper pedestal fixed Screw 57 Infrared light 58 IR camera 59 TV 60 Cable

Claims (8)

(57) [Claims] A flexible film on which a substrate is mounted, and means for applying a fluid pressure to the flexible film, wherein the flexible film is to be adhered to the substrate by a pressure generated on the flexible film. A bonding apparatus that bonds substrates to each other by pressing the substrates. 2. The bonding apparatus according to claim 1, wherein a plurality of flexible films are provided on one substrate. 3. The bonding apparatus according to claim 2, wherein the flexible films are arranged in parallel or in a matrix. 4. The bonding apparatus according to claim 2, wherein a means for applying a fluid pressure to the flexible film is provided for each of the plurality of flexible films. . 5. The bonding apparatus according to claim 4, wherein the means for applying a fluid pressure to the flexible film includes: a fluid flow path acting to generate an adhesive pressure on the flexible film; Means for individually opening and closing each flow path, wherein the pressure applied to each flexible film is controlled by the opening and closing means. In bonding apparatus according to any one of claims wherein claims 1 to 5, wherein the flexible membrane is characterized by a transmissive resistant material to infrared light adhesive apparatus. 7. The bonding apparatus according to claim 6, the adhesive pressure by means for applying a fluid pressure to the flexible membrane from the permeate resistant material relative to the support is infrared light receiving as a reaction force A bonding device, comprising: 8. The bonding apparatus according to claim 6 or claim 7, irradiating means for irradiating a infrared light on the substrate for performing an adhesive, bonding state based on infrared light coming through the substrate And a means for controlling the fluid pressure based on the bonding state.