JP2006248895A5 - - Google Patents

Description

In order to solve the above-mentioned problems, the present invention, after bonding OH groups atomically using plasma on the bonding surfaces of the objects to be bonded, which are either Si, SiO ₂ or glass, ing both objects to be bonded from the bonding method of anodic bonding.

In addition, the present invention provides a plasma processing unit that attaches OH groups by atomically bonding to a bonding surface between objects to be bonded that are any one of Si, SiO ₂ , and glass by using plasma, and the plasma processing unit ing the two objects to be bonded to the OH group is attached to the joint surface from the bonding apparatus equipped with an anode bonding means for anodic bonding.

In the present invention, after joining both the objects to be bonded, the plasma is used to attach and bond the OH groups to the bonding surfaces of the objects to be bonded which are any one of Si, SiO ₂ and glass. , ing the two objects to be bonded from the bonding method of anodic bonding to the bonding.

In addition, the present invention provides a plasma processing unit that attaches OH groups by atomically bonding to a bonding surface between objects to be bonded that are any one of Si, SiO ₂ , and glass by using plasma, and the plasma processing unit Temporary bonding means for temporarily bonding the two bonded objects having OH groups attached to the bonding surface, and main bonding means for performing main bonding by applying a voltage to the temporary bonded both bonded objects and heating them. ing from the joining apparatus provided with the anodic bonding means having and.

In addition, the present invention is characterized in that after the temporary bonding at room temperature, the process or apparatus is separated and the main bonding is performed by the anodic bonding .

Further, the present invention is characterized in that the temporary joining means and the main joining means are provided in independent spaces .

In addition, the present invention is characterized in that a plurality of the main joining processes are balanced with respect to the number of the temporary joining processes .

Further, the present invention is characterized in that the anodic bonding means has a plurality of the main bonding means with respect to the number 1 of the temporary bonding means .

In addition, the present invention is characterized in that the temporary bonding is performed in a reduced pressure or gas-reduced reduced pressure chamber, and the main bonding is performed in the atmosphere .

The present invention, the provided vacuum chamber temporary bonding means disposed therein, performs the temporary bonding under reduced or gas substituted in said vacuum chamber, as characterized by performing the main bonding in the air Yes.

Further, the present invention is characterized in that, after OH groups are atomically bonded and adhered to the bonding surface, the two objects to be bonded are anodic bonded without being exposed to the atmosphere .

In the present invention, the plasma processing means and the anodic bonding means are each provided in a decompression chamber, and OH groups are atomically bonded to the bonding surface by the plasma processing means and then exposed to the atmosphere. It is characterized in that both the objects to be bonded are anodic bonded without performing the above.

Further, in the present invention, the plasma is a low pressure plasma, and after the OH group is atomically bonded to the bonding surface by using the low pressure plasma and attached, the two objects to be bonded are continuously formed in the same chamber. Is contacted in a vacuum .

The plasma processing means and the anodic bonding means have a reduced pressure chamber disposed therein, and the plasma by the plasma processing means is a reduced pressure plasma, and OH groups are atomized on the bonding surface using the reduced pressure plasma. The two objects to be joined are brought into contact with each other in vacuum continuously in the decompression chamber after being bonded together .

Further, the present invention is characterized in that both the objects to be bonded are heated at 200 ° C. or less during or after bonding .

Further, the present invention is characterized in that both the objects to be bonded are heated at 200 ° C. or less during or after bonding .

Further, the present invention is characterized in that, when OH groups are atomically bonded to the bonding surface and adhered, a gas containing H ₂ O or H, OH groups is mixed, and then both the objects to be bonded are brought into contact with each other. It is said.

The present invention also includes water gas generating means, and when OH groups are atomically bonded to the bonding surfaces to be attached, a gas containing H ₂ O or H, OH groups is mixed, and then both the bonded surfaces are bonded. It is characterized by contacting objects .

In addition, the present invention is a joining method in which three or more objects to be joined are joined together, wherein the objects to be joined having the same linear expansion coefficient are sandwiched from both sides . .

Further, the present invention is a joining apparatus that sandwiches joints having different linear expansion coefficients from both sides with joints having the same linear expansion coefficient, and stacks and joins three or more joints by voltage application means. A voltage is simultaneously applied from the sandwiched objects having different linear expansion coefficients to the outer objects to be bonded having the same linear expansion coefficient .

Further, the present invention is a device produced by the bonding method according to any one of claims 1 to 9 , wherein the object to be bonded is a wafer or a chip cut out from the wafer, and OH groups are bonded atomically. after deposition Te, ing from devices such as semiconductor devices or MEMS device made by the anodic bonding.

Claims (19)

After bonding both the objects to be bonded by temporarily bonding the OH groups to the bonding surfaces of the objects to be bonded which are either Si, SiO ₂ or glass by atomically bonding them using plasma. A joining method in which an object is anodically bonded for main bonding. The bonding method according to claim 1 , wherein after the temporary bonding at room temperature, the process or apparatus is separated and the main bonding by the anodic bonding is performed. The joining method according to claim 2 , wherein a plurality of the main joining steps are balanced against the number of the temporary joining steps. Performs the temporary bonding under reduced or gas substituted vacuum in the chamber, the bonding method according to any one of claims 1 to 3 performing the main bonding in the air. The bonding method according to any one of claims 1 to 3 , wherein after bonding OH groups to the bonding surfaces and attaching them, the two objects to be bonded are subjected to anodic bonding without exposure to the atmosphere. The plasma is a low-pressure plasma, and after the OH groups are bonded atomically to the bonding surface by using the low-pressure plasma, the two objects to be bonded are continuously contacted in a vacuum in the same chamber. The joining method according to any one of claims 1 to 3 . The bonding method according to any one of claims 1 to 6 is heated at 200 ° C. below the two objects to be bonded after bonding or during bonding. H _{2 O} or H when adhering to atomically coupled to form an OH group on the bonding surface, after mixing the gas containing OH groups, any one of claims 1 to 7 contacting the two objects to be bonded The joining method described in 1. 3 or more of a joining method of joining overlapping the objects to be bonded, in the linear expansion coefficient is equal article to be welded, according to any one of claims 1 to sandwich the different objects to be bonded linear expansion coefficient from both sides 8 Joining method. A device created by the bonding method according to any one of claims 1 to 9, a chip that object to be bonded is cut out from the wafer or wafer, after being deposited atomically coupled to form an OH group A device such as a semiconductor device or a MEMS device produced by anodic bonding. Plasma processing means for attaching and bonding OH groups atomically to the bonding surfaces of the objects to be bonded which are either Si, SiO ₂ or glass using plasma;
A temporary bonding means for temporarily bonding the two bonded objects having OH groups attached to the bonding surface by the plasma processing means, and applying a voltage to the temporary bonded both bonded objects to heat An anodic bonding means having a main bonding means for bonding. The joining apparatus according to claim 11 , wherein the temporary joining unit and the main joining unit are provided in independent spaces. The anodic bonding means includes
The bonding apparatus according to claim 12 , wherein the number of the temporary bonding means includes a plurality of the main bonding means. The temporary joining means includes a decompression chamber disposed therein,
Joining apparatus according to any one of performs the temporary bonding under reduced or gas substituted in the decompression chamber, the preceding claims 11 performs the main bonding in the atmosphere 13. The plasma processing means and the anodic bonding means are each provided in a decompression chamber, and after the OH groups are atomically bonded and attached to the bonding surface by the plasma processing means, the both of them are exposed without being exposed to the atmosphere. joining apparatus according to any one of claims 11 to 13, objects to be bonded anodically bonding. A vacuum chamber in which the plasma processing means and the anodic bonding means are disposed;
The plasma generated by the plasma processing means is a low-pressure plasma, and after the OH groups are atomically bonded and attached to the bonding surface using the low-pressure plasma, the two bonded portions are continuously formed in the low-pressure chamber. joining apparatus according to any one of claims 11 contacting in vacuo things 13. The joining apparatus according to any one of claims 11 to 16 , wherein the two objects to be joined are heated at 200 ° C. or less during or after joining. Water gas generating means,
H _{2 O} or H when adhering to atomically coupled to form an OH group on the bonding surface, after mixing the gas containing OH groups, any of the claims 11 to 17 is brought into contact with both objects to be bonded The joining apparatus as described in. It is a joining device that sandwiches joints having different linear expansion coefficients from both sides with joined objects having the same linear expansion coefficient, and joins three or more joined objects in an overlapping manner,
The voltage applying means, wherein a different object to be bonded of linear expansion coefficient of the sandwiched inner to any of claims 11 to 18 simultaneously applies a voltage toward the object to be bonded of the outer the linear expansion coefficient is equal to Welding equipment.