JPH089163Y2 - Roll-up type vapor deposition device - Google Patents

Description

[Detailed description of the device]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a roll-up type vapor deposition apparatus for producing a vapor deposition film by heating a vapor deposition material by an electron beam heating system.

[0002]

2. Description of the Related Art Vapor-deposited films conventionally used for packaging materials and gold / silver yarn applications are ones in which a thin film of metal or the like is continuously provided by a vacuum vapor deposition method on a band-shaped film made of a polymer or the like.

In the production of such a vapor-deposited film, a strip-shaped film from an unwinding roll is passed through some guide rolls and the like, and the vapor deposition material heated by a vapor deposition source provided under the cooling drum is adhered and aggregated. , Is done by winding.

As a heating method for vapor deposition, there are a direct or indirect resistance heating method, an induction heating method, an electron beam heating method, a light, a laser heating method and the like. In the case of metal, any heating method may be used. When a metal or the like having a high melting point is vapor-deposited, a large amount of energy is required, so an electron beam heating method is often used.

In addition, depending on the heating method, since reflected electrons (secondary electrons) fly to the film from the vapor deposition source, the film is slightly charged, and as a result, the cooling drum and the film are not smoothly separated from each other. Has occurred,
An electrically grounded backscattered electron trap portion is provided by a conductive base material such as copper and traps backscattered electrons to reduce the flight to the film.

[0006]

However, when a vapor deposition material having an insulating property such as a metal oxide is deposited, the conductive base material for trapping backscattered electrons is insulated by the vapor deposition material deposited with time. Therefore, trapping of reflected electrons in the reflected electron trap portion becomes insufficient. As a result, backscattered electrons fly on the film sliding on the cooling drum, and the film is charged, so that the running is not smooth, scratches occur, and in the worst case, winding becomes impossible. Was occurring.

[0007]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, in which a vapor deposition material in a vapor deposition source heated by an electron beam is continuously thin-filmed on a continuous substrate. In the roll-up type vapor deposition apparatus for forming a film, a backscattered electron trap part, to which a conductive base material is sequentially moved and a new surface of the conductive base material is supplied, is provided at a flying site of backscattered electrons generated behind an incident electron beam. It is a roll-up type vapor deposition device characterized by the above.

[0008]

In the roll-up type vapor deposition apparatus according to the present invention, the new surface of the conductive substrate of the backscattered electron trap portion provided at the backscattered electron flying position traps the backscattered electrons without being insulated and grounds them. be able to. Therefore, it is possible to reduce the flight of backscattered electrons to the film.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings.

<Embodiment 1> FIG. 1 shows an embodiment of a winding type vapor deposition apparatus according to the present invention. A film 8 (thickness 12 μm, width 200 mm) 8 made of PET was placed on the unwinding roll 2 in the vacuum chamber 1. The film passes through the tension roll 4, the guide roll 5 and the expander roll 6, slides on the cooling drum 7, and reaches the opening of the shielding mask 9 provided above the vapor deposition source 12. Further, the vapor deposition material 11 made of silicon oxide is put into the vapor deposition source 12 made of a water-cooled copper crucible, and the deflection coil 1
It is heated by the electron beam 14 from the electron gun 10 guided by 3. In addition, the vapor deposition conditions at that time are vacuum degree 7
The pressure was × 10 ^-5 Torr, the acceleration voltage was 30 KV, and the line speed was 100 m / min.

The backscattered electron trap, which is the main part of the present invention, will be described in detail. First, the position where the backscattered electron trap is provided is based on the flight position of the backscattered electrons, that is, the vapor deposition source into which the vapor deposition material 11 is introduced. Behind (on the other side). Furthermore, it is a position where the vapor space limited by the shielding mask 9 and the vapor deposition source 12 provided under the cooling drum is not blocked, and the angle from the vapor deposition source 12 (θ in FIG. 1) is 20 to 45.
°.

The conductive base material is preferably one having a large thermal conductivity in terms of cooling efficiency as well as having conductivity. In addition, a band shape is preferable because the shape moves sequentially and a new conductive base material surface is supplied, and a metal base material having a thickness of sufficient strength and easy movement is preferably about 0.5 to 5 mm. In this embodiment, a conductive base material (width 300 mm, thickness 1 mm) 15 made of a copper plate is slid on a cooling roll 16 in which cooling water at −10 ° C. is circulated, and is driven by a motor to move 1 m per minute. Let The cooling roll 16 was fully grounded.

The film on which the heated vapor deposition material adheres and agglomerates to form a vapor deposition film leaves the cooling drum 7, passes through the expander roll 6, the guide roll 5 and the tension roll 4, and is wound up by the winding roll 3. .

Observation of the inside of the vacuum chamber 1 during the vapor deposition process revealed that the film was smoothly separated from the cooling drum 7.
The runnability was good. Further, when the vapor deposition film of the vapor deposition film wound on the winding roll 3 was observed, there was no deterioration of the vapor deposition film due to scratches or charging.

<Example 2> The evaporation conditions were the same as in Example 1, and the evaporation was performed using the roll-up type evaporation apparatus shown in FIG. The backscattered electron trap portion of the present embodiment will be described in detail. A conductive base material (width 300 mm, thickness 5 mm) 15 made of a copper plate is slid on a cooling plate 17 in which cooling water at −10 ° C. is circulated, and the motor is moved. Was driven to move 1 m per minute. The cooling roll 16
Was well grounded.

When the inside of the vacuum chamber 1 was observed during the vapor deposition process, the running property was good as in Example 1, and the vapor deposition film of the vapor deposition film was also good.

<Comparative example> The deposition conditions were the same as in Examples 1 and 2, the conductive base material of the backscattered electron trap was stopped, and the runnability was observed in the same manner as in Examples 1 and 2. As time passed, the peeling between the cooling drum and the peeling portion 18 of the film was not smooth, and the film was eventually rolled up. Also, when observing the vapor deposition film of the obtained vapor deposition film,
Degradation of the deposited film due to charging and pinholes were observed.

[0018]

As described above, according to the roll-up type vapor deposition apparatus according to the present invention, the conductive base material is sequentially moved to the flight site of the backscattered electrons generated behind the incident electron beam, and a new conductive base material is obtained. Since the backscattered electron trap portion to which the surface is supplied is provided, the backscattered electrons can be grounded and the flight to the film can be reduced. Therefore, insulating thin films such as metal oxides can be deposited at high speed stably for a long time,
The vapor-deposited film obtained is also stable in physical properties.

[Brief description of drawings]

FIG. 1 is a schematic sectional view showing an embodiment of a vapor deposition device of the present invention.

FIG. 2 is a schematic cross-sectional view showing another embodiment of the vapor deposition device of the present invention.

[Explanation of symbols]

 1 Vacuum Tank 2 Unwinding Roll 3 Winding Roll 4 Tension Roll 5 Guide Roll 6 Expander Roll 7 Cooling Drum 8 Film 9 Shielding Mask 10 Electron Gun 11 Evaporation Material 12 Evaporation Source 13 Deflection Coil 14 Electron Beam 15 Conductive Substrate 16 Cooling Roll 17 Cooling plate 18 Stripping part between cooling drum and film

Claims (1)

[Scope of utility model registration request] 1. A roll-up type vapor deposition apparatus for continuously forming a thin film on a continuous substrate by depositing a vapor deposition material in an evaporation source heated by an electron beam on a flight site of reflected electrons generated behind an incident electron beam. The roll-up type vapor deposition apparatus is characterized in that a backscattered electron trap portion is provided to which a conductive substrate is sequentially moved and a new conductive substrate surface is supplied.