JPH0878484A - Tab tape carrier and semiconductor device - Google Patents

Abstract

PURPOSE: To obtain a TAB tape carrier on which a multi-terminal chip can be mounted by making it possible to form a ball terminal projecting from an LSI chip and in which a lead can be connected accurately with a chip electrode without causing any positional shift or deformation of the lead. CONSTITUTION: An insulating film 11 is provided, at the peripheral part thereof, with a slit 18 for exposing the chip electrode 13 of an LSI. A lead 7 provided on the insulating film 11 has a terminal formation land 17 at one end thereof and the lands 17 are provided on the opposite sides of the slit 18. An inner lead 14 extending from the land 17 traverses the slit 18 from the left and right directions and then secured onto the film on the opposite sides of the slit 18. A V-groove 19 is made in the inner lead at a predetermined position thereof and the inner lead 14 is bent on the slit 18 and cut at the part of the V-groove 19 before being connected with the chip electrode 13. A ball terminal is formed on the terminal formation land 17 of the lead 7.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TAB tape carrier having a plurality of terminal forming lands and a semiconductor device having a plurality of conductive material terminals on its bottom surface, and more particularly to a multi-terminal chip having an increased number of terminals. BGA that makes it possible to install
Regarding the package.

[0002]

2. Description of the Related Art FIG. 7 shows a BGA package type semiconductor device having a conventional structure. What is BGA Package? Ball G
This is a rigid array, and has a structure in which a large number of ball terminals 5 are arranged on the bottom surface of the BGA package 1.
That is, the LSI chip 6 is connected to the lead pattern 7 of the multilayer wiring substrate 4 by the bonding wire 3, and reaches the ball terminal 5 via the multilayer wiring pattern 8.
The ball terminal 5 is attached by a printing reflow method, a ball transfer method, or the like after sealing with the mold resin 2. Here, the print reflow method is a method of forming a ball by printing a solder paste and then reflowing the solder paste, and the ball transfer method is a method of positioning and soldering a spherical solder ball made in advance.

The BGA package type semiconductor device basically started from the idea of using a multilayer wiring board (glass epoxy resin plate). Because of the wire bonding method, the wiring pads on the substrate are provided only on the periphery of the LSI chip, and therefore, a multilayer wiring substrate is required for wiring from the periphery to the central ball terminal. This is because the wiring board technology has a limit to wiring of 0.3 mm pitch, and therefore, in order to lay out fine wiring, it is inevitably necessary to form a multilayer.

However, this device requires resin molding to protect the wires floating on the surface,
Since it is necessary to use a multilayer wiring board, there are many drawbacks as follows.

(1) To include a mold resin and a substrate,
The package becomes thick.

(2) Because of resin molding, heat dissipation is extremely poor.

(3) Since the glass epoxy substrate is used as the substrate, the cost is increased.

(4) Since the chip and the inner lead are bonded by wire bonding, the bonding pitch is wide, which is an obstacle to miniaturization.

(5) MCM due to the large package
Incorporation into the (Multi Chip Module) is impossible.

Therefore, a BGA package using a TAB tape carrier without the above-mentioned drawbacks has been proposed. FIG. 8 shows a sectional view thereof, and FIG. 9 shows a bottom view thereof. TAB
The tape carrier 20 is formed by forming a lead pattern made of a copper foil on the insulating film 11, and the inner lead 14 which is one end of the lead pattern is attached to the carrier 2.
0 is projected toward the outside and is connected to the chip electrode 13 of the LSI chip 6 attached to the insulating film 11. A terminal forming land 17 is formed at the other end of the lead pattern, and a ball terminal 5 for external connection with a printed circuit board or the like is provided there.

The TAB tape carrier 20 attached to the LSI chip 6 does not exceed the area of the LSI chip 6 due to the restriction of the inner leads and the chip electrode connection, and therefore the ball terminal 5 is only on the back surface of the LSI chip 6. It will be installed.

[0012]

DISCLOSURE OF THE INVENTION The conventional TAB described above
The BGA package type semiconductor device using the tape carrier has an advantage over the one using the multilayer wiring board, but since the ball terminals 5 for external connection are provided only on the back surface of the chip, the number of ball terminals is small. However, there is a drawback that it is impossible to mount a multi-terminal LSI.

It is an object of the present invention to solve the above-mentioned drawbacks of the prior art and to mount a multi-terminal chip by allowing the protrusion of the conductive material to be formed by protruding the LSI chip. It is to provide a tape carrier and a semiconductor device.

It is another object of the present invention to provide a TAB tape carrier and a semiconductor device capable of accurately connecting leads to chip electrodes without causing lead displacement or lead deformation.

[0015]

A TAB tape carrier according to a first aspect of the present invention has an end on an insulating film having a slit formed in the peripheral portion to expose a chip electrode on one surface of an LSI chip when the one surface is attached. An inner lead extending from the land has a land for forming a terminal, a lead crossing the slit is fixed, and a predetermined portion of the inner lead on the slit is fixed when the inner lead is pressed and bent on the slit. It is provided with a groove that is cut from the part.

In the TAB tape carrier of the second invention, the insulating film has a larger area than that of the LSI chip, and is divided into an inner portion corresponding to the back surface of the chip and an outer portion protruding from the chip by a slit formed in the peripheral portion. The terminal forming lands at one end of the lead are provided on both the inner side portion and the outer side portion, and inner leads extending from the land cross the slit from both left and right directions.

A semiconductor device of a third invention comprises the TAB tape carrier of the first invention or the second invention, and an LSI chip having a large number of chip electrodes formed along a peripheral portion of one surface of the chip. One surface is attached to an insulating film of a TAB tape carrier so that the chip electrode on the one surface is exposed from the slit, the inner lead is pressed and bent on the slit, and the inner lead cut from a predetermined portion by the pressing and bending. The lead end is connected to the chip electrode in the slit, and a protrusion of a conductive material for external connection is formed on the terminal forming land.

In the semiconductor device of the fourth invention, the ends of the leads are connected to the chip electrodes by an ultrasonic connection method or a thermocompression bonding method.

In the semiconductor device of the fifth invention, a reinforcing body for reinforcing the insulating film is provided on an outer portion of the insulating film protruding from the chip.

In a semiconductor device according to a sixth aspect of the present invention, the conductive material terminal is a ball terminal, and a printing reflow method of forming a ball by printing a solder paste and then reflowing the solder paste or positioning and soldering a previously prepared spherical solder ball. It is provided by the ball transfer method.

[0021]

When the inner lead provided on the insulating film is projected to the outside of the insulating film from only one direction, the conductive material protrusion formed at one end of the lead can be provided only on the back surface of the chip. However, when the inner leads are protruded from both directions so as to face each other, the conductive material protrusion can be provided not only on the back surface of the chip but also on the chip.

The present invention has been made on the basis of such knowledge, and the TAB tape carrier and the semiconductor device of the present invention include an inner portion and an outer portion of an insulating film defined by slits formed in the insulating film. A lead is provided in the part and the inner lead can be connected to the chip electrode exposed in the slit from both directions of the slit. By doing so, the conductive material protrusion can be provided not only on the inner side of the insulating film corresponding to the back surface of the chip but also on the outer side protruding from the chip. Therefore, the number of conductive material protrusions is larger than in the case where the inner leads are protruded to the outside of the insulating film from one direction, and the multi-terminal LS is
I can be installed.

In the TAB tape carrier of the present invention, the inner leads that cross the slit are fixed on the insulating film on both sides of the slit. Therefore, since the lead remains in the state of being fixed on the insulating film until just before cutting, it is extremely unlikely that the lead is displaced or the lead is deformed by an external force.

In the semiconductor device of the present invention, the connection of the inner lead to the chip electrode is made by cutting the groove portion of the inner lead by pushing and bending the inner lead. Since it is fixed on the upper side, it is extremely difficult for the lead to be displaced and the lead to be deformed due to external force, and accurate connection to the chip electrode can be achieved.

[0025]

Embodiments of the semiconductor device of the present invention will be described below with reference to the drawings. 2 is a bottom view of the LSI chip of this embodiment, and FIG. 3 is a plan view of the TAB tape carrier.

As shown in FIG. 2, on one surface (bottom surface) of the LSI chip 6, a large number of chip electrodes 1 are arranged along the periphery thereof.
3 is formed.

FIG. 3 shows a TAB tape carrier 20 to which the LSI chip 6 is attached. The insulating film 11 serving as the base of the TAB tape carrier 20 is composed of a polyimide film, a glass epoxy film or the like. A slit 18 for exposing the chip electrode 13 on one surface of the LSI chip 6 is provided in the peripheral portion of the chip attaching portion 11a of the insulating film 11.
Is formed. The slit 18 is formed in a rectangular shape according to the arrangement of the chip electrodes 13 as shown in the drawing. The chip sticking portion 11a of the insulating film 11 has a larger area than the LSI chip 6, and the peripheral portion thereof sticks out beyond the LSI chip 6 when stuck. The chip attaching portion 11a includes an inner portion 21 corresponding to the back surface of the chip due to the slit 18 and an outer portion 2 protruding from the LSI chip 6.
It is divided into two parts.

A copper foil 12 is provided on the surface of the insulating film 11, and a large number of leads 7 formed from this copper foil are fixed. As a method of providing a copper foil on the insulating film, the copper foil is pasted with an epoxy-based or polyimide-based adhesive, or the polyimide resin is directly varnish-coated or pasted on the copper foil having no adhesive. It is possible to employ either a method of combining them, or a method of forming copper directly on the polyimide by vapor deposition, sputtering, plating or the like.

Each lead 7 formed by etching a copper foil
The inner leads 14 cross the slits 18, and both sides of the crossed inner leads 14 are fixed to the insulating film 11. A terminal forming land 17 is formed at one end of the lead 7, and the terminal forming land 17 is formed not only on the inner portion 21 of the chip attaching portion 11a but also on the outer portion 22. That is, the inner leads 14 extending from the terminal forming lands 17 extend from both the right side and the left side of the slit 18 and cross the slit 18. The reason why the inner lead 14 is made to cross the slit 18 is to fix the inner lead end on the insulating film 11. Therefore, the inner lead end beyond the slit 18 may be short.

As shown in FIG. 4, when the inner lead 14 is pushed and bent on the slit 18 to a predetermined portion on the slit 18 of the inner lead 14 which crosses the slit 18 from both left and right directions, the inner lead 14 is cut from the predetermined portion. A groove 19 is provided. The formation position of the groove 19 in the inner lead 14 is provided on the opposite side of the terminal forming land 17 in the slit 18, as shown in the drawing. The groove 19 is preferably V-shaped, and can be formed by, for example, a half etching method or a punching method.

Now, the BGA package type semiconductor device of this embodiment shown in FIG. 5 is produced from the LSI chip 6 and the TAB tape carrier 20. The LSI chip 6 is
The chip electrode 13 on one surface of the TAB tape carrier 20 is accurately aligned so that it is exposed from the slit 18, and the adhesive film 9 is applied to the insulating film 11 of the TAB tape carrier 20. After the attachment, as shown in FIG. 1, when each inner lead 14 is pressed and bent on the slit 18 using a bonder, the inner lead 14 is cut from the V groove 19 and is one of the cut lead ends. The inner lead end is slit 18 as it is.
It is connected to the chip electrode 13 exposed inside. This connection can be by an ultrasonic connection method or a thermocompression bonding method.
The other lead residual piece remains on the insulating film 11 in a fixed state.

Thus, the inner lead 14 of the lead 7 is
As shown in FIG. 5, the slits 18 extend from the left and right sides of the slit 18 onto the slit 18, and are pressed and bent into the slit 18 to be connected to the chip electrode 13. Slit 18 after connection
Is sealed with potting resin 16. This seal is T
A normal potting method used for sealing the AB package can be applied. When the slit 18 is sealed, the moisture resistance of the inside of the slit 18, that is, the connecting portion between the chip electrode 13 and the inner lead 14 can be improved, and the reliability of the semiconductor device can be improved. After the electrodes are connected, the ball terminals 5 for external connection are formed on the terminal forming lands 17. The terminals can be formed by a printing reflow method in which a solder paste is printed and then reflowed to form balls, or a ball transfer method in which a preformed spherical solder ball is positioned and soldered.

Further, as shown in the figure, the insulating film 1
The outer part 22 of 1 is the same as the inner part 21 of the LSI chip 6
Since it is not lined with, it may be weak in strength.
Therefore, if necessary, the reinforcing body 10 is used to reinforce. The reinforcing body 10 is the insulating film 1 on the same side as the LSI chip 6.
It is superposed on the outer side portion 22 of No. 1 and adhered by the adhesive agent 9. At this time, the reinforcing body 10 may be formed so that the inner peripheral end of the reinforcing body 10 is placed on the LSI chip 6, and the reinforcing body 10 may be bonded and integrated with the LSI chip 6.

As described above, according to this embodiment, the inner leads are guided not only from the back surface of the chip outward to the inside of the slit, but also from the outside, so that the ball terminal is provided just below the back surface of the LSI chip. Instead, it can be arranged in the peripheral portion of the chip, and a multi-terminal arrangement becomes possible.

Further, in the present embodiment, the inner leads are connected to the chip electrodes in the slits by not connecting the inner leads which are protruding from the left and right on the slit but floating on both sides thereof across the slit. Is performed by pushing and bending the inner lead fixed on the insulating film. If you want to connect the inner leads that are protruding and floating above the slits, after etching, the internal stress when bonding the copper and the insulating resin is released, and the relative position of the inner leads protruding from the right and left sides of the slit. Will be displaced from a predetermined position, or external force will be applied to the protruding leads to cause deformation, positional displacement, etc., which makes accurate electrode connection impossible. However, if the inner lead is fixed on the insulating film until just before the cutting as in the present embodiment, such a situation does not occur, and the electrode connection can be performed accurately.

Next, an embodiment of the BGA package type semiconductor device described above will be described more specifically.

(Specific example) The LSI chip 6 has a size of 13 × 13.
A mm square having a thickness of 0.6 mm was prepared. Aluminum chip electrodes 13 of 0.08 mm square were formed at intervals of 0.1 mm on the peripheral portion of the surface of the LSI chip 6. The number of chip electrodes 13 is 400 pads. Gold bumps were formed on the chip electrodes 13 (FIG. 2).

On the other hand, the TAB tape carrier was manufactured as follows. Epoxy adhesive 9 on both sides (10 μm thick)
Attached polyimide film 11 (75μm thickness x 35mm
The copper foil 12 having a thickness of 35 μm was attached to one side of the (width).
Then, an inner lead 14 for connecting to the chip electrode 13 of the LSI chip 6 and a land 1 for forming a terminal are formed on the copper foil 12.
Leads 7 having 7 at both ends were formed by photoetching.

The inner leads 14 were made to cross the slit 18 of the insulating film 11 alternately from the left and right sides. Then, during the press-bending connection, the V groove 19 was formed by half etching at a predetermined position of the lead 7 to be cut. The inner lead 14 of this TAB tape carrier 20
Was coated with gold by electroless plating of about 0.5 μm (FIG. 4).
After that, the gold-plated inner leads 14 are pressed into the slits 18 by a single point bonder one by one, and the bending stress is used to cut the inner leads 14 from the V-grooves 19 on the leads. (Fig. 1).

Next, the pattern was covered with a polyimide resin 24 to protect the lead pattern 7 while leaving the terminal forming land 17 formed on the other end of the lead 7 (FIG. 1). After that, the eutectic solder paste was applied to the exposed terminal forming lands 17 by a printing method. After coating, reflow was performed to make solder ball terminals 5. The solder ball terminal has a diameter of 0.6 mm and a height of 0.6 mm (Fig. 5).

BG equipped with this TAB tape carrier
On the outer peripheral portion of the A package, a metal rectangular reinforcing member 10 was attached with a polyimide adhesive 9 in order to maintain mechanical strength and flatness. Then, the bonding portion of the inner lead 14 was sealed with an epoxy potting resin 16 (FIG. 5).

According to this, since the ball terminals can be formed on both the back surface of the LSI chip and the outside thereof, the multi-terminal L is formed.
SI chip can be installed. Further, the BGA of the present invention
By using a package type semiconductor device, multi-terminal L
The SI can be installed thinly, which contributes to the thinning of the device itself.

(Modification) In the above specific example, the inner leads are connected alternately from the left and right, but they may not be connected alternately. For the convenience of routing the wiring, as shown in FIG. 6, a plurality of inner leads 14 may be continuously connected from the same direction. Further, the connecting terminals of the PCB and the like are not limited to ball terminals and may be pin terminals.

[0044]

According to the TAB tape carrier of the present invention, a groove is provided at a predetermined portion of the inner lead on the slit, and the inner lead can be cut from the groove by pressing and bending. It is in a state of being fixed on the insulating film, and it is possible to make it extremely difficult for lead displacement and lead deformation due to external force to occur, and to ensure accurate connection to the chip electrode.

Further, according to the TAB tape carrier of the present invention, an insulating film having an area larger than that of the LSI chip is divided into an inner part corresponding to the back surface of the chip and an outer part protruding from the chip, and the inner part is formed. Since the terminal forming lands are provided on both the outer side and the outer side, the number of conductive material protrusions formed on the terminal forming lands can be increased and a multi-terminal LSI can be mounted.

According to the semiconductor device of the present invention, the LS
Since the TAB tape carrier with a larger area and a larger number of terminal forming lands was attached to the I chip,
Realization of multiple terminals.

Further, according to the semiconductor device of the present invention, the inner lead before cutting, which is extremely less in lead deformation due to displacement and external force, is pressed and bent on the slit to be cut and connected to the chip electrode. As compared with the case where the inner lead formed so that the end portion is floated above the slit is connected to the chip electrode, the inner lead can be accurately connected to the chip electrode.

Further, according to the semiconductor device of the present invention, since the reinforcing body for reinforcing the insulating film is provided on the outer side of the chip protruding from the chip, mechanical strength and flatness can be maintained.

[Brief description of drawings]

FIG. 1 is an enlarged view of a connecting portion between a chip electrode and an inner lead of an LSI chip for explaining an embodiment of a semiconductor device of the present invention.

FIG. 2 is a bottom view of the LSI chip for explaining the embodiment of the semiconductor device of the present invention.

FIG. 3 is a plan view of a tape carrier for explaining an embodiment of the TAB tape carrier of the present invention.

FIG. 4 is an enlarged view of a lead portion of a TAB tape carrier in which a plurality of leads of this embodiment are alternately arranged from left and right on a slit.

FIG. 5 is a schematic cross-sectional view of the BGA package type semiconductor device of this embodiment.

FIG. 6 is an enlarged view of a lead portion of a TAB tape carrier in which a plurality of leads of this embodiment are continuously arranged in a slit from the same direction.

FIG. 7: BGA using a conventional glass epoxy substrate
Sectional drawing of a package type semiconductor device.

FIG. 8: BG using a conventional TAB tape carrier
Sectional drawing of an A package type semiconductor device.

9 is a bottom view of the semiconductor device of FIG.

[Explanation of symbols]

 7 Lead 11 Insulating Film 13 Chip Electrode 14 Inner Lead 17 Terminal Forming Land 18 Slit 19 V Groove

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toyohiko Kumakura 3-1, 1-1 Sukegawa-cho, Hitachi City, Ibaraki Hitachi Cable, Ltd.

Claims (6)

[Claims] 1. An LSI chip having a terminal-forming land at one end and extending from the land on an insulating film formed with a slit at its periphery to expose a chip electrode on the one surface when the LSI chip is pasted An inner lead is fixed to a lead that crosses the slit, and a predetermined portion of the inner lead on the slit is provided with a groove that is cut from the predetermined portion when the inner lead is pressed and bent on the slit. TAB tape carrier. 2. The chip attaching portion of the insulating film is LS
The area is larger than that of the I-chip, and is divided into an inner portion corresponding to the back surface of the chip and an outer portion protruding from the chip by a slit formed in the peripheral portion. The TAB tape carrier according to claim 1, wherein inner leads extending from the land cross the slit from both the left and right directions of the slit. 3. The TAB tape carrier according to claim 1 or 2, and an LSI chip having a large number of chip electrodes formed along a peripheral portion of the one surface of the chip, the one surface of the LSI chip being provided on the one surface. The chip electrode is attached to the insulating film of the TAB tape carrier so that it is exposed from the slit, the inner lead is pushed and bent on the slit, and the inner lead end cut from a predetermined portion by the pushing and bending is put in the slit. And a projection of a conductive material for external connection is formed on the land for forming a terminal on the terminal forming land. 4. The semiconductor device according to claim 3, wherein the other end of the inner lead is connected to the chip electrode by an ultrasonic connection method or a thermocompression bonding method. 5. The semiconductor device according to claim 3, wherein a reinforcing body for reinforcing the insulating film is provided on an outer portion of the insulating film protruding from the chip. 6. The conductive material terminal is a ball terminal,
6. The ball terminal is provided by a printing reflow method of forming a ball by reflowing a solder paste after printing, or a ball transfer method of positioning and soldering a preformed spherical solder ball. The semiconductor device according to any one of claims.