JPH0864836A - Fabrication of thin film semiconductor device - Google Patents

Abstract

PURPOSE: To stably radiate the laser beam to a semiconductor thin film crystalizing the semiconductor, and at the same time and activate impurity. CONSTITUTION: First, a semiconductor thin film 2 is formed on an insulating substrate 1 in a film forming process. Next, a series of processings are performed, as the fabrication process, to many element regions specified on a semiconductor thin film 2 to form many thin film transistors. In this case, at the intermediate stage of the series of processings, the laser beam is radiated, as the radiation process for crystalizing the semiconductor thin film 2 under the condition that semiconductor thin film 2 is provided continuously for many element regions. This radiation process is carried out after the impurity implantation to the semiconductor thin film 2 for crystallization of the semiconductor thin film 2 included in the channel part (ch) and simultaneously for activating impurity implanted to the source region S and drain region D.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film semiconductor device. More specifically, it relates to a technique for crystallizing a semiconductor thin film by irradiation with an energy beam. The thin film semiconductor device is used, for example, in assembling an active matrix type liquid crystal display panel.

[0002]

2. Description of the Related Art For a high resolution display, development of a small and high definition active matrix type liquid crystal display panel using a polycrystalline silicon thin film transistor as a switching element is regarded as extremely promising. Above all, a liquid crystal display panel with a built-in drive circuit, in which a pixel array section and a drive array section are formed on the same glass substrate in the same process, has an advantage that steps such as wire bonding and drive IC mounting can be omitted. In order to realize a large-sized and high-definition liquid crystal display panel using a polycrystalline silicon thin film transistor, it is essential to establish a low temperature process that can use a low-priced glass substrate. As a method of low temperature process, what has been greatly expected from the past is to irradiate a semiconductor thin film such as amorphous silicon with an energy beam such as a laser beam to form high quality polycrystalline silicon on a low melting glass substrate. It is a technology.

[0003]

A high-performance thin film transistor can be produced by irradiating the channel portion of the thin film transistor with an energy beam such as a laser beam or an electron beam for crystallization. Also, by irradiating the source part and the drain part of the thin film transistor with an energy beam,
Impurity activation annealing can be performed. Conventionally, the semiconductor thin film has been patterned by separating it into island shapes in accordance with the element region of the thin film transistor, and then irradiating with an energy beam. However, since the heat generated by the irradiation of the energy beam is diffused only through the glass substrate, which has a relatively low thermal conductivity, the semiconductor thin film patterned in an island shape is heated to an abnormally high temperature and evaporates during the irradiation of the energy beam. As a result, there is a problem that crystallization and activation of impurities cannot be performed well. Further, in order to form a polycrystalline silicon thin film transistor at a low temperature, it is necessary to activate the source part and the drain part at a relatively low temperature in addition to the crystallization of the channel part. Therefore, conventionally, the crystallization of the channel portion and the activation of the source portion and the drain portion have been separately performed by separate energy beam irradiation. However, the irradiation of the energy beam has to be performed in two steps, and there is a problem that the throughput of the thin film semiconductor device manufacturing process is reduced.

[0004]

In view of the above-mentioned problems of the prior art, the present invention controls the thermal diffusion flow generated by the irradiation of the energy beam, and the energy beam irradiation method for uniformly crystallizing the semiconductor thin film. The purpose is to provide. It is another object of the present invention to provide a semiconductor process in which the energy beam irradiation process can be completed once by simultaneously crystallization of the channel part and activation of the source part and the drain part. The following measures have been taken in order to achieve this object. That is, according to the present invention, the thin film semiconductor device is manufactured by the following steps. First, a film forming step of forming a semiconductor thin film on an insulating substrate is performed. Next, a processing step of forming a large number of thin film transistors by performing a series of processes on a large number of element regions defined in the semiconductor thin film is performed. As a characteristic feature, an irradiation step of irradiating an energy beam to crystallize the semiconductor thin film is performed when the semiconductor thin film is continuous over a large number of element regions in the middle of the series of processes. Preferably, the processing step includes an implantation process of selectively implanting an impurity into the element region to form a source part and a drain part of the thin film transistor and providing a channel part between them, and the irradiation step includes It is carried out at a later stage of the implantation process, and at the same time as crystallization of the semiconductor thin film included in the channel part, activation of the impurities implanted in the source part and the drain part is attempted. More preferably, in the processing step, the element region is pretreated prior to the irradiation step so that the efficiency of the energy beam applied to the channel part is relatively higher than the efficiency of the energy beam applied to the source part and the drain part. Make it higher. For example, the pretreatment is a treatment of providing an energy beam antireflection film on the channel portion except for the source portion and the drain portion. Alternatively, the pretreatment is processing for making the thickness of the semiconductor thin film included in the channel portion smaller than the thickness of the semiconductor thin film included in the source portion and the drain portion.
The processing step includes a process of selectively etching the semiconductor thin film formed on the entire surface of the insulating substrate and processing it into a predetermined pattern continuous over a large number of element regions prior to the irradiation step. May be. Further, the processing step may include a process of separating unnecessary element regions from each other by etching away unnecessary portions of the semiconductor thin film after the irradiation step. Further, after the processing step, an electrode step of forming a pixel electrode connected to each thin film transistor may be performed.

The present invention can be applied to the manufacture of a liquid crystal display panel assembled by using a thin film semiconductor device. That is, according to the present invention, the liquid crystal display panel is manufactured by the following steps. First, a film forming step of forming a semiconductor thin film on an insulating substrate is performed. Next, a processing step of forming a large number of thin film transistors by performing a series of processes on a large number of element regions defined in the semiconductor thin film is performed. As a characteristic feature, an irradiation step of irradiating an energy beam to crystallize the semiconductor thin film is performed when the semiconductor thin film is continuous over a large number of device regions in the middle of the series of processes. After that, an electrode process of connecting a plurality of thin film transistors to form a large number of pixel electrodes is performed. Subsequently, an assembling step of joining the counter substrate to the insulating substrate via a predetermined gap is performed. Finally, a liquid crystal display panel is completed by performing a sealing step of injecting liquid crystal into the gap.

[0006]

In the present invention, the semiconductor thin film is crystallized by irradiating with an energy beam when the semiconductor thin film is continuous over a large number of device regions in the middle of a series of processes for forming the thin film transistor. . Since the semiconductor thin film is irradiated with the energy beam in a continuous state, heat is easily diffused and a rapid local temperature rise does not occur.
Therefore, stable crystallization can be achieved without causing evaporation of the semiconductor thin film. Further, in the present invention, after selectively implanting impurities into the element region to form the source and drain parts of the thin film transistor, the source part and the drain part are simultaneously crystallized in the channel part by irradiating with an energy beam. The implanted impurities are activated. Since it is possible to simultaneously crystallize the semiconductor thin film and activate the impurities by irradiating the energy beam once, it is possible to improve the throughput of manufacturing the thin film semiconductor device.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described in detail below with reference to the drawings. 1 to 4 are process drawings showing a method of manufacturing a thin film semiconductor device according to the present invention. First, in step (A) of FIG. 1, a semiconductor thin film 2 is formed on an insulating substrate 1 made of a glass material such as Corning Inc. # 7059.
For example, an amorphous silicon thin film is deposited with a thickness of 10 to 80 nm. Specifically, the amorphous silicon thin film is plasma C
A film is formed at a substrate temperature of about 160 to 250 ° C. by the VD method. Instead of this, low pressure CVD (LPCVD) is used for Si
An amorphous silicon thin film may be formed at a low temperature of 500 to 550 ° C. by thermally decomposing H ₄ . Alternatively, if Si ₂ H ₆ is used instead of SiH ₄ , the amorphous silicon thin film can be formed at a low temperature of about 450 ° C. In addition, the polycrystalline silicon thin film formed by the LPCVD method or the microcrystalline silicon thin film is S
It may be made amorphous by implanting i + ions. Next, in step (B), the antireflection film 3 is formed if necessary. For example, SiO ₂ is LPCVD, atmospheric pressure CVD (APCV
D), a film is formed to a thickness of about 50 nm by sputtering or plasma CVD. The antireflection film is used to prevent reflection of laser beam irradiation performed in a later step, but the antireflection film 3 can also be used as a gate insulating film in some cases. Subsequently, in step (C), the surface of the insulating substrate 1 is selectively covered with the resist 4. In the element region covered with the resist 4, a P-channel type thin film transistor (P
chTFT) and an N-channel thin film transistor (LDD NchTFT) having an LDD structure are formed. In the element region not covered by the resist 4, the capacitive element C will be formed in the future.
s is formed. In this step (C), As + ions are selectively implanted through the resist 4 to reduce the resistance of the semiconductor thin film 2 included in the capacitive element region in advance. Next, in step (D), after removing the above-mentioned resist, a polycrystalline silicon thin film is formed with a thickness of 350 nm and patterned into a predetermined shape to provide a mask 5. The mask 5 is patterned in the same shape as the gate electrode and the capacitor element electrode which will be formed in a later step. A channel region ch is defined immediately below the mask 5 provided as a virtual gate electrode. In this state, P + ions are implanted with a relatively low dose amount to provide an LDD region in the semiconductor thin film 2.

In step (E) of FIG. 2, another resist 6 is formed, and As + ions are implanted through the resist 6 at a relatively high dose amount. As a result, the N-type source part S is formed in the element region on the right side.
At the same time when the drain portion D and the drain portion D are formed, the channel portion ch is left between them. The channel part c
The LDD region is left between h and the source part S and the drain part D. At the time of implanting As + ions, the element regions on the left side and the center are covered with the resist 6. Subsequently, in step (F), after the used resist 6 is removed, another resist 7 is formed. The resist 7 selectively covers the central element region and the right element region. When B + ions are implanted at a relatively high dose in this state, P-type source portions S and drain portions D are formed. A channel section ch is left between them. As can be understood from the above description, the mask 5 is used to form the source part and the drain part by self-alignment. The mask material is not limited to polycrystalline silicon as long as this purpose is achieved.

Next, the step (G) which is a feature of the present invention
Perform That is, after the used mask 5 is removed, a laser beam is irradiated to crystallize at least the semiconductor thin film 2 included in the channel portion ch. Instead of the laser beam, another energy beam such as an electron beam can be used. This irradiation step is performed in the middle of a series of processes for forming a thin film transistor, and when the semiconductor thin film 2 is continuous over many element regions, the semiconductor thin film 2 is crystallized by irradiation with an energy beam. Since the semiconductor thin film 2 is continuous, the heat generated by the laser beam irradiation is easily diffused and does not cause a rapid temperature rise.
Therefore, the semiconductor thin film has no risk of evaporation. The laser beam irradiation can be performed in the same state as when the semiconductor thin film 2 was formed. Alternatively, in step (B), the semiconductor thin film 2 formed on the entire surface of the insulating substrate 1 in advance is selectively etched and processed into a predetermined pattern continuous over a large number of element regions, and then laser beam irradiation is performed. May be. Even in this case, the individual element regions are not separated into islands,
It is at least partially continuous. The laser beam irradiation is performed by, for example, excimer laser light with an energy density of 150 to 450.
Set mJ / cm ² and set the pulse duration to 100 to 1000
The temperature is set to about ns and the substrate temperature is set to a range of about 20 to 450 ° C. The laser pulse is shot once or a plurality of times for a certain area section to melt and recrystallize the semiconductor thin film. In this case, it is not always necessary to irradiate the laser beam from the front surface side of the insulating substrate, and in some cases, the back surface may be irradiated from the back surface. In the case of backside irradiation, the antireflection film laminated on the surface of the semiconductor thin film is not always necessary.

The laser beam irradiation process is carried out at a later stage of the impurity implantation process, and at the same time as crystallization of the semiconductor thin film 2 included in the channel part ch, the source part S and the drain part D are formed.
The impurities implanted in the substrate are activated. That is, the crystallization of the semiconductor thin film and the activation of the impurities can be simultaneously performed by one laser beam irradiation step, which leads to improvement in throughput. When performing simultaneous heat treatment (annealing) on the channel part and the source part and the drain part, the energy level at which the source part and the drain part are activated is relatively low. There is a fear that crystallization will be insufficient and the microcrystalline state will remain. On the contrary, the energy level required for increasing the grain size of the channel portion is relatively high, and when the laser beam irradiation is performed under this condition, the source portion and the drain portion may be worn due to evaporation or the like and contact may be lost. Generally, the optimum irradiation energy level of the channel part is higher than the optimum irradiation energy level of the source part and the drain part. To solve this, the following method may be adopted. That is, if the element region is pre-processed prior to the irradiation step so that the efficiency of the energy beam applied to the channel part is relatively higher than the efficiency of the energy beam applied to the source part and the drain part. good. As a specific example of the pretreatment, for example, an antireflection film for an energy beam may be selectively provided on the channel part except the source part and the drain part. Alternatively, the thickness of the semiconductor thin film included in the channel portion may be processed to be smaller than the thickness of the semiconductor thin film included in the source portion and the drain portion. By adopting the above method, the crystallization of the channel portion and the activation of the source portion and the drain portion can be performed at the same time.
In either method, the energy level for recrystallizing the channel portion is relatively higher than the energy level for activating the source portion and the drain portion.

Next, in step (H), the semiconductor thin film 2 in a "solid" state or in a continuous pattern is patterned into a channel pattern (element region) of the thin film transistor. That is, after the energy beam irradiation, unnecessary portions of the semiconductor thin film 2 are removed by etching to separate the individual element regions. When an antireflection film is provided, the used antireflection film is peeled off from the surface of the semiconductor thin film at this stage. After peeling, the gate insulating film 8 is formed. This gate insulating film is formed by depositing SiO _2, for example, by PECVD or sputtering.

Next, in step (I) of FIG. 3, a conductive thin film is formed and patterned into the shape of the gate electrode 9. At the same time, the electrode 9a is also patterned on the capacitive element region with the same material. As the conductive thin film, Al, Mo, W, Ti
Alternatively, an alloy of these metals and Si, or a multilayer structure in which polycrystalline silicon and the above metals are combined can be adopted. Through the series of processes described above, the Nch TFT having the LDD structure is formed in the right element region, the capacitive element Cs is formed in the central element region, and the Pch is formed in the left element region.
A TFT is formed. Subsequently, in step (J), PSG or the like is formed into the first interlayer insulating film 10. Further process (K)
Then, the contact hole 11 is opened in the first interlayer insulating film 10 to partially expose the source part S and the drain part D of each TFT.

Moving to the step (L) of FIG. 4, the wiring electrode 1 is formed by forming a film of metal aluminum or the like and then patterning it into a predetermined shape.
2 is provided. Finally, in step (M), PSG is deposited again to form the second interlayer insulating film 13. A passivation film 14 made of P-Si _x or the like formed by PCVD is formed thereon,
Annealing is performed to diffuse hydrogen in the passivation film 14 into the semiconductor thin film 2 made of polycrystalline silicon to reduce the defect level. This completes the thin film semiconductor device.

The thin film semiconductor device thus manufactured is used as a display semiconductor chip which is one substrate of a liquid crystal display panel, for example. In this case, for example, Nch
The TFT is used as a switching element for driving the pixel electrode, the capacitive element Cs is used for storing an image signal written in the pixel electrode, and the PchTFT is used as a constituent element of a peripheral drive circuit. When processing as a display semiconductor chip, an electrode step of forming a pixel electrode by connecting to the drain portion of the NchTFT is performed. Further, when assembling a liquid crystal display panel using this display semiconductor chip, an assembling step of joining the counter substrate to the insulating substrate 1 through a predetermined gap is performed. Then, a liquid crystal display panel is completed by performing a sealing step of sealing the liquid crystal in the gap.

As a comparative example, the behavior in the case where the laser beam irradiation step is applied in a state where the semiconductor thin film made of polycrystalline silicon or the like is separated and independent in an island shape will be described. When the laser beam is applied in the state where the pattern of the semiconductor thin film is separated into islands, heat diffuses through the insulating substrate made of glass or the like having relatively low thermal conductivity, and there is no heat dissipation path. Therefore, the temperature of the polycrystalline silicon rises rapidly and the island-shaped element region evaporates. On the other hand, in the manufacturing method of the present invention, since the laser beam is irradiated when the polycrystalline silicon is in a continuous state, heat is easily diffused and a rapid temperature rise does not occur. Further, since the source part and the drain part are activated simultaneously with the crystallization of the channel part, the throughput is not lowered.

FIG. 5 is a schematic plan view showing an example of a continuous pattern of the semiconductor thin film 2. Prior to the laser beam irradiation step, a semiconductor thin film 2 is entirely formed on an insulating substrate.
Is selectively etched and processed into a predetermined pattern continuous over a large number of device regions. By doing so, the thermal diffusion flow generated when the laser beam is irradiated has a constant direction along the pattern, so that it becomes possible to impart desired regularity to the crystal grains having a large grain size. Of course, the laser beam irradiation may be performed in a solid state on the entire surface without processing the semiconductor thin film 2 into a continuous pattern.

FIG. 6 is a schematic perspective view showing an example of a display semiconductor chip manufactured according to the present invention. When manufacturing a display semiconductor chip, first, a film forming step is performed to form a semiconductor thin film 52 on a transparent insulating substrate 51 made of a glass material having a relatively low melting point (for example, 600 ° C. or lower). The semiconductor thin film 52 is amorphous or polycrystalline having a relatively small grain size in the precursor state, and is made of, for example, amorphous silicon or polycrystalline silicon. Next, a series of processes including laser annealing of the semiconductor thin film 52 are performed to integrally form thin film transistors in the area section 53 for one chip. In this example, the area section 53 includes a pixel array section 54, a horizontal scanning circuit 55, and a vertical scanning circuit 56. A thin film transistor is integrally formed on each of these. Finally, a pixel electrode for one screen is formed in the pixel array section 54 to complete the display semiconductor chip 57.

In the laser irradiation step, the area section 53 is irradiated with a laser pulse 58 in one shot, for example, to collectively heat the semiconductor thin film 52 for one chip. This laser irradiation is intended to crystallize the semiconductor thin film 52 by batch heating. For example, when the semiconductor thin film 52 is amorphous silicon in the precursor state, it is once melted by batch heating and then crystallized to obtain polycrystalline silicon having a relatively large grain size. When the semiconductor thin film 2 is a polycrystal having a relatively small grain size in the precursor state, it can be melted by batch heating and then recrystallized to be converted into a polycrystal having a relatively large grain size. Furthermore, at the same time as crystallization of the semiconductor thin film 52 by batch heating,
We are trying to activate the impurities. Excimer laser light can be used as the laser pulse 58. Since the excimer laser light is a strong pulsed ultraviolet light, it is absorbed by the surface layer of the semiconductor thin film 52 made of silicon or the like and raises the temperature of that portion, but does not heat the insulating substrate 51. In the present invention, since the laser beam irradiation is performed when the semiconductor thin film 52 is continuous, sufficient thermal diffusion occurs, and problems such as evaporation do not occur. As the precursor film formed on the insulating substrate 51, a plasma CVD silicon film or the like that can be formed at a low temperature can be selected. Transparent insulating substrate 51 made of glass material
For example, when a plasma CVD silicon film having a thickness of 30 nm is formed, the melting threshold energy when irradiated with XeCl excimer laser light is about 130 mJ / cm ² . To melt the entire film thickness, for example, energy of about 220 mJ / cm ² is required. The time from melting to solidifying is about 70 ns. In this example, the pixel array unit 5
4, the semiconductor thin film 52 included in the horizontal scanning circuit 55 and the vertical scanning circuit 56 is collectively irradiated by one shot, but the invention is not limited to this. For example, the pixel array unit 5
4, the horizontal scanning circuit 55 and the vertical scanning circuit 56 may be divided and irradiated with the laser beam. However, even in this case, the area of the semiconductor thin film 52 that receives the divided irradiation is 0.1 cm.
^{A value of 2} or more is preferable from the viewpoint of thermal diffusion.

In general, the insulating substrate 51 is composed of a large wafer so that a large number of display semiconductor chips 57 can be obtained. That is, the insulating substrate 51 has a plurality of area sections 5 in advance.
3 is set, and the laser irradiation step sequentially irradiates the individual area sections 53 with the laser pulse 58 in one shot. In this example, the area section 53 has a rectangular shape,
A laser pulse 58 having a rectangular cross section is irradiated in one shot in alignment with this. The size of the wafer is 10
The dimensions are approximately 10 to 50 × 50 cm ² . In the area section 53 which is the laser irradiation area, the pixel array section 54,
A horizontal scanning circuit 55 and a vertical scanning circuit 56 are provided, both of which include thin film transistors. In this display semiconductor chip 57, the total number of thin film transistors is 100 kbit or more, and the diagonal dimension of the area section 53 is 1
It is 4 mm or more. This diagonal dimension extends to, for example, about 3 inches.

FIG. 7 is a schematic perspective view showing an example of a liquid crystal display panel using the display semiconductor chip shown in FIG. 6 as a substrate. As shown in the figure, the liquid crystal display panel includes an insulating substrate 101, a counter substrate 102, and a liquid crystal layer 103 held between them. A pixel array unit 104 and a driving unit are integrally formed on the insulating substrate 101. The drive unit is divided into a vertical scanning circuit 105 and a horizontal scanning circuit 106. A terminal portion 107 for external connection is formed on the upper end of the peripheral portion of the insulating substrate 101. The terminal portion 107 is connected to the vertical scanning circuit 105 and the horizontal scanning circuit 1 via the wiring 108.
It is connected to 06. On the other hand, in the pixel array section 104, pixel electrodes 109 arranged in a matrix and thin film transistors 110 for switching and driving the pixel electrodes 109 are integrally formed. Further, gate wirings 111 and data wirings 112 intersecting in a matrix are also provided. The gate wiring 111 is connected to the vertical scanning circuit 105, and the data wiring 112 is connected to the horizontal scanning circuit 106. A thin film transistor 110 is arranged at the intersection of both wirings. The source electrode of the thin film transistor 110 corresponds to the corresponding data line 112.
, The gate electrode is connected to the corresponding gate wiring 111, and the drain electrode is connected to the corresponding pixel electrode 109.

[0021]

As described above, according to the present invention, in the middle of a series of processes for forming a semiconductor transistor,
When the semiconductor thin film is continuous over many element regions, the semiconductor thin film is crystallized by irradiation with an energy beam such as a laser beam. As a result, a semiconductor thin film formed on an insulating substrate having low thermal conductivity can be irradiated with an energy beam over a large area and recrystallized. In addition, by irradiating the channel portion and the source portion and the drain portion with a laser beam at the same time to perform crystallization and activation, a thin film transistor according to a low temperature process can be formed in one irradiation step, and the number of steps can be reduced. Has a tremendous effect. As described above, the method for manufacturing a thin film semiconductor device according to the present invention is an essential technique in a field requiring a high performance thin film transistor such as a large size and high definition liquid crystal display panel.

[Brief description of drawings]

FIG. 1 is a process drawing showing a method of manufacturing a thin film semiconductor device according to the present invention.

FIG. 2 is a process drawing showing the same manufacturing method.

FIG. 3 is a process drawing showing the same manufacturing method.

FIG. 4 is a process drawing showing the same manufacturing method.

FIG. 5 is a plan view showing an example of a continuous pattern of a semiconductor thin film.

FIG. 6 is a schematic perspective view showing an example of a display semiconductor chip manufactured according to the present invention.

7 is a schematic perspective view showing an example of a liquid crystal display panel assembled using the display semiconductor chip shown in FIG.

[Explanation of symbols]

 1 Insulating Substrate 2 Semiconductor Thin Film 3 Antireflection Film 5 Mask 8 Gate Insulating Film 9 Gate Electrode

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical indication location H01L 27/12 R (72) Inventor Shizuo Nishihara 6-735 Kitashinagawa, Shinagawa-ku, Tokyo Soniー Incorporated (72) Inventor Hisao Hayashi 6-735 Kitashinagawa, Shinagawa-ku, Tokyo Sony Incorporated

Claims (9)

[Claims] 1. A film forming step of forming a semiconductor thin film on an insulating substrate; a processing step of performing a series of treatments on a large number of element regions defined in the semiconductor thin film to form a large number of thin film transistors; And a step of irradiating with an energy beam to crystallize the semiconductor thin film when the semiconductor thin film is continuous over a large number of element regions in the middle of the treatment. 2. The processing step includes an implantation process in which an impurity is selectively implanted into the element region to form a source part and a drain part of a thin film transistor and a channel part is provided therebetween. 2. The method for manufacturing a thin film semiconductor device according to claim 1, wherein the irradiation step is carried out at a later stage of the implantation process, and the impurities implanted in the source portion and the drain portion are activated at the same time as crystallization of the semiconductor thin film included in the channel portion. . 3. In the processing step, the element region is pretreated prior to the irradiation step, and the efficiency of the energy beam applied to the channel portion is relatively higher than the efficiency of the energy beam applied to the source portion and the drain portion. 3. The method for manufacturing a thin film semiconductor device according to claim 2, wherein the height is made higher. 4. The method of manufacturing a thin film semiconductor device according to claim 3, wherein the pretreatment is a treatment of providing an antireflection film for an energy beam on the channel portion except the source portion and the drain portion. 5. The pretreatment is a treatment for processing the thickness of the semiconductor thin film included in the channel portion to be smaller than the thickness of the semiconductor thin film included in the source portion and the drain portion.
A method for manufacturing a thin film semiconductor device according to claim 1. 6. The processing step comprises a step of selectively etching a semiconductor thin film formed on the entire surface of an insulating substrate prior to the irradiation step and processing it into a predetermined pattern continuous over a large number of element regions. The method of manufacturing a thin-film semiconductor device according to claim 1, comprising. 7. The method of manufacturing a thin film semiconductor device according to claim 1, wherein the processing step includes a step of removing unnecessary portions of the semiconductor thin film by etching after the irradiation step to separate individual element regions from each other. 8. The method for manufacturing a thin film semiconductor device according to claim 1, wherein after the processing step, an electrode step of forming a pixel electrode connected to each thin film transistor is performed. 9. A film forming step of forming a semiconductor thin film on an insulating substrate, a processing step of forming a large number of thin film transistors by performing a series of treatments on a large number of element regions defined in the semiconductor thin film, An irradiation step of crystallizing the semiconductor thin film by irradiating it with an energy beam when the semiconductor thin film is continuous over a large number of element regions in the middle of the treatment of A method of manufacturing a liquid crystal display panel, comprising: an electrode step of forming a pixel electrode, an assembly step of joining an opposite substrate to the insulating substrate via a predetermined gap, and a sealing step of injecting liquid crystal into the gap.