JP3874825B2 - Manufacturing method of semiconductor device and electro-optical device - Google Patents

Description

[0001]
[Industrial application fields]
The invention disclosed in this specification relates to a method for manufacturing an electro-optical device typified by a liquid crystal display. Further, the present invention relates to a method for manufacturing a semiconductor device that can be used for the structure of a liquid crystal display. The present invention also relates to a method for selectively forming thin film devices having different characteristics.
[0002]
[Prior art]
In recent years, liquid crystal displays using thin film transistors are known. This is called an active matrix type, in which a thin film transistor is arranged in each of the pixels arranged in a matrix, and accumulation and discharge of charges held in the pixel electrode of each pixel are controlled by these thin film transistors. An active matrix liquid crystal display device is expected to become the mainstay of future displays because it can display high-speed moving images with a fine size.
[0003]
In addition, in an active matrix liquid crystal display device, a configuration is known in which a thin film transistor disposed in a pixel region and a thin film transistor that forms a peripheral driver circuit for driving a pixel are formed over the same substrate. By adopting such a configuration, the pixel region and the peripheral driving circuit can be integrated as a thin film integrated circuit on a single substrate, so that weight reduction and thinning can be significantly promoted.
[0004]
Generally, required characteristics are different between a thin film transistor disposed in a pixel region and a thin film transistor disposed in a peripheral driver circuit. A thin film transistor disposed in a pixel region is required to have a small OFF current (also referred to as a leakage current). The OFF current of a thin film transistor is a current that flows between the source and drain when the thin film transistor is OFF. When this OFF current is large, the electric charge that must be held in the pixel electrode is lost as the OFF current even though the thin film transistor is OFF, and the image cannot be displayed in the required time.
[0005]
On the other hand, a thin film transistor disposed in the peripheral driver circuit is required to have a characteristic that allows a large ON current to flow and allows high-speed operation. That is, it is required to have a high mobility. On the other hand, a thin film transistor disposed in the pixel region is not required to have such a high speed operation and therefore does not need to have high mobility.
[0006]
Thus, different characteristics are required for the thin film transistors arranged in the pixel region and the thin film transistors arranged in the region of the peripheral driver circuit. Therefore, when integrating the thin film transistor arranged in the pixel region and the thin film transistor arranged in the region of the peripheral driver circuit on the same substrate, the necessary characteristics can be obtained in the necessary region by devising the manufacturing process. It is necessary to selectively form thin film transistors.
[0007]
[Problems to be solved by the invention]
An object of the invention disclosed in this specification is to provide a technique for separately forming thin film transistors having different characteristics over the same substrate. In particular, an object of the present invention is to provide a technique for separately forming a thin film transistor disposed in a pixel region and a thin film transistor for forming a peripheral driver circuit on the same substrate in a method for manufacturing an active matrix liquid crystal display device.
[0008]
[Means for Solving the Problems]
The main invention disclosed in this specification is:
Forming an amorphous silicon film;
Forming a light-transmitting thin film containing a metal element that promotes crystallization of silicon in a part of the amorphous silicon film;
A step of crystallizing the amorphous silicon film in the region where the silicon oxide film is formed by heat treatment;
Irradiating with laser light;
It is characterized by having.
[0009]
In the above structure, the amorphous silicon film is formed on a substrate having an insulating surface to a thickness of several hundred to several thousand by a plasma CVD method, a low pressure thermal CVD method, or other known film formation methods. Can be used. As a substrate having an insulating surface, a glass substrate, a quartz substrate, a substrate on which an insulating film such as a silicon oxide film or a silicon nitride film is formed, a semiconductor substrate or a conductor substrate on which an insulating film is formed are used. Can be used. In general, if a liquid crystal display is configured, a light-transmitting substrate typified by a glass substrate is used as the substrate.
[0010]
In the above structure, “a light-transmitting thin film containing a metal element that promotes crystallization of silicon is formed in a part of the amorphous silicon film” means that at least a part of the crystal of the amorphous silicon film is crystallized. This is to selectively promote sex.
[0011]
As the metal element that promotes crystallization of silicon, one or more kinds of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au are used. In particular, nickel (Ni) has been found to have good reproducibility and a remarkable effect. Further, the concentration of these metal elements in the silicon film needs to be in a range that can promote crystallization of silicon and does not impair the characteristics of silicon as a semiconductor. ¹⁶ cm ^-3 ~ 5x10 ¹⁹ cm ^-3 , Preferably 1 × 10 ¹⁷ cm ^-3 ~ 5x10 ¹⁹ cm ^-3 It is necessary to introduce so that it becomes. Specifically, it is necessary to adjust the concentration of the metal element in the light-transmitting thin film so that the concentration of the metal element in the silicon film falls within the above concentration range.
[0012]
In the above structure, the heat treatment is performed in order to selectively crystallize the region by the action of a metal element that promotes crystallization of silicon introduced into a partial region of the amorphous silicon film. . In general, the amorphous silicon film can be crystallized by heat treatment. The crystallization temperature of the amorphous silicon film varies depending on the film forming method and film forming conditions, but is generally about 580 ° C. to 620 ° C.
[0013]
In this heat treatment, when a metal element that promotes crystallization of silicon is used, at a lower temperature, and Yo The amorphous silicon film can be crystallized in a shorter time.
[0014]
When a metal element that promotes crystallization of silicon is used, the time required for the heat treatment is shortened. Therefore, an amorphous silicon film in which a metal element that promotes crystallization is not introduced is generally crystallized. do not do. For example, when the heating temperature is set to 650 ° C., the heating time for obtaining good crystallinity is about 4 hours, but the amorphous silicon film not using a metal element that promotes crystallization is subjected to this heat treatment condition. Does not crystallize.
[0015]
In the present invention, utilizing this, the heat treatment is usually performed at a temperature at which the amorphous silicon film does not crystallize, and only the region into which the metal element that promotes the crystallization of silicon is introduced is selectively crystallized. It has become.
[0016]
Specifically, this selective crystallization can be performed by performing heat treatment at a temperature of 450 ° C. to 600 ° C. Generally, when the temperature at which the amorphous silicon film is crystallized is 600 ° C. or less, the time required for crystallization is required to be 100 hours or more. In the present invention, since a metal element that promotes crystallization of silicon is introduced, the heating time can be reduced to 1/10 or less. However, at a temperature of 450 ° C. or lower, the heat treatment takes several tens of hours or more, which is impractical.
[0017]
Therefore, in the present invention, by performing heat treatment at a temperature of 450 ° C. or higher and 600 ° C. or lower, a region into which a metal element that promotes crystallization of silicon is introduced is selectively crystallized.
[0018]
In the case where a glass substrate (including a quartz substrate) is used as the substrate, the upper limit of the heat treatment temperature needs to be equal to or lower than the strain point of the glass substrate. Since it is useful to perform the heat treatment at a temperature as high as possible below the strain point of the glass substrate, therefore, the present invention provides silicon by performing the heat treatment at a temperature of 450 ° C. or more and below the strain point of the glass substrate. The region into which the metal element that promotes crystallization is introduced is selectively crystallized. .
[0019]
In the above structure, a region where the amorphous silicon film is crystallized and a region which remains amorphous are formed at the same time by the heat treatment step. After this heat treatment step, laser irradiation is performed to form a first crystalline region that further promotes the crystallinity of the selectively crystallized region, and at the same time, remains amorphous. The region is crystallized to form a second crystalline region. Note that in this laser light irradiation step, only a region requiring laser light may be selectively irradiated.
[0020]
Since the first crystalline region is crystallized by heat treatment and laser light irradiation, it has very excellent crystallinity. Second crystal sex Since the region is crystallized only by the laser beam, the region has lower crystallinity than the first crystalline region, but has a dense crystal structure in which the crystal grain boundary is not conspicuous. In particular, a crystalline silicon film having a low trap level can be stably obtained by irradiating laser light in a low output range where the output is stable.
[0021]
Here, since the second crystal region is crystallized only by the laser beam, the laser beam must be irradiated with a large energy density. When the laser beam is irradiated with such an energy density, the first crystallinity is obtained. Since the region is already crystallized by heating, the crystal arrangement may be damaged, and it is necessary to irradiate the first region with laser light at an energy density that promotes crystallization.
[0022]
Therefore, the present invention reduces the irradiation energy density of the laser beam in the thin film by irradiating the laser beam through the translucent thin film used for introducing the metal element. Let Yes. Therefore, since a light-transmitting thin film is not formed on the surface of the second region, the laser beam is irradiated with an energy density that can be crystallized. Ru At the same time, since a light-transmitting thin film is formed on the surface of the first region, the laser beam has a lower energy density than the second region. Will be irradiated . That is, in a single laser light irradiation step, a region requiring laser light can be irradiated with a required energy density.
[0023]
In addition, since a light-transmitting thin film is formed on the surface of the first crystalline region, the surface is in a pressed state, and thus surface unevenness generated when laser light is irradiated is suppressed. be able to.
[0024]
Here, the light-transmitting thin film may be a material that transmits laser light with a required transmittance. As such a light-transmitting thin film, a silicon oxide film can be used. In addition, the transmittance is adjusted by adjusting the thickness of the light-transmitting thin film and the concentration of impurities added to the thin film. Decision By doing so, the energy density of the laser beam can be adjusted.
[0025]
In the present invention having the above structure, the first crystalline silicon film obtained by using a metal element has a large OFF current value due to the influence of the remaining metal element. A thin film transistor having mobility can be formed. Therefore, it can be suitably used, for example, in a peripheral circuit of an active matrix type liquid crystal display device.
[0026]
On the other hand, since the second crystalline silicon film crystallized only by laser light irradiation is incomplete in crystallinity, it is difficult to obtain high mobility uniformly throughout the film. If laser light irradiation is performed in a stable low output range, a crystalline silicon film having a low trap level can be stably obtained. Accordingly, since a thin film transistor having low OFF current characteristics can be obtained at the expense of mobility, it can be preferably used for a thin film transistor disposed in a pixel region of an active matrix liquid crystal display device, for example.
[0027]
Furthermore, the present invention adopts the following configuration as a modified configuration of the above configuration. That is, A step of forming an amorphous silicon film; a step of forming a light-transmitting thin film containing a metal element that promotes crystallization of silicon in a part of the amorphous silicon film; Process for crystallizing the entire crystalline silicon film When And a small number of regions where the light-transmitting thin film is formed. When And a step of irradiating at least a part of the region where the light-transmitting thin film is not formed with a laser beam. Is .
[0028]
A feature of the above configuration is that the entire temperature of the amorphous silicon film is crystallized by performing the heat treatment temperature at a temperature equal to or higher than the crystallization temperature of the amorphous silicon film for a predetermined time.
[0029]
As the upper limit of the heat treatment temperature, if a glass substrate is used as the substrate, it is appropriate to use the strain point of the glass substrate.
[0030]
In the heat treatment step having the above structure, the amorphous silicon film in the region in contact with the light-transmitting thin film containing the metal element is a first crystalline region with good crystallinity. Turn into Made. On the other hand, the amorphous silicon film in a region not in contact with the light-transmitting thin film containing the metal element is a second crystalline region having a lower crystallinity than the former. Turn into Made. Crystallinity of Different crystalline regions are selectively formed.
[0031]
Other major inventions disclosed in this specification are:
A method for manufacturing an active matrix liquid crystal display device having a pixel region and a peripheral circuit region,
Forming an amorphous silicon film over a substrate having an insulating surface;
Forming a light-transmitting thin film containing a metal element that promotes crystallization of silicon on an amorphous silicon film in at least a part of a region to be a peripheral circuit region;
A step of crystallizing the amorphous silicon film in the region where the light-transmitting thin film is formed by heat treatment;
Irradiating with laser light;
Forming a thin film transistor using the silicon film irradiated with the laser beam;
It is characterized by having.
[0032]
The above configuration is an active matrix The Thin film transistors placed in the peripheral circuit area (mainly the peripheral drive circuit area) of a liquid crystal display device Yo A thin film transistor is formed using a region (crystalline silicon film) whose crystallinity is promoted by laser light irradiation, and the thin film transistor disposed in the pixel region is crystallized by laser light irradiation. The region (crystalline silicon film) formed is used. The peripheral drive circuit includes analog and digital circuits that handle video signals and the like, and a memory, in addition to the literal drive circuit portion that drives the thin film transistor of the pixel. In the case where it is not necessary to provide high mobility to all the thin film transistors constituting the peripheral circuit, it is not necessary to introduce nickel element into all the regions constituting the peripheral circuit.
[0033]
In the above structure, the entire amorphous silicon film may be crystallized by increasing the temperature of the heat treatment.
[0034]
[Action]
In the present invention having the above structure, a light-transmitting thin film containing a metal element that promotes crystallization of silicon is formed on a part of an amorphous silicon film, and further subjected to heat treatment, whereby selective treatment is performed. A part of the region can be crystallized. Furthermore, the crystallinity of the crystallized region is further improved by irradiating with laser light. When In both cases, the remaining amorphous region can be crystallized. Thus, regions of crystalline silicon thin film having different electrical characteristics can be formed. By forming a thin film transistor using a region having these different electrical characteristics, a thin film transistor having the required characteristics can be created.
[0035]
A thin film transistor including a region crystallized by heat treatment by the action of a metal element that promotes crystallization has high mobility, can operate at high speed, and can flow a large ON current. In addition, a thin film transistor formed using a region crystallized only by laser light irradiation does not have a high-speed operation or a characteristic capable of flowing a large ON current, but can obtain a characteristic with a relatively small OFF current. .
[0036]
Therefore, a thin film transistor that constitutes a peripheral drive circuit region of an active matrix liquid crystal display device is formed using a region obtained by selectively introducing a metal element that promotes crystallization of silicon, and is disposed in a pixel region. By forming the thin film transistor to be used using a region crystallized only by laser light irradiation, the thin film transistor having the necessary characteristics for the peripheral driver circuit region and the pixel region can be simultaneously formed on the same substrate. Can do.
[0037]
In addition, the translucent thin film has an effect of introducing a metal element into the amorphous silicon film and also has an effect of lowering the irradiation energy density of the laser beam. . So Therefore, the silicon film crystallized by the heat treatment existing under the light-transmitting thin film is low. D The laser beam is irradiated with the energy density, and the amorphous silicon film is irradiated with the laser beam with a high energy density.
[0038]
【Example】
The present invention will be described based on the embodiment shown in FIGS.
[0039]
In this embodiment, when an active matrix liquid crystal display device is manufactured, a process of separately forming a thin film transistor forming a peripheral driver circuit and a thin film transistor forming a pixel region on the same glass substrate is shown.
[0040]
As shown in FIG. 1A, a silicon oxide film 102 serving as a base film is formed on a glass substrate 101 to a thickness of 3000 mm. Next, an amorphous silicon film 103 is formed to a thickness of 500 mm by plasma CVD or low pressure thermal CVD.
[0041]
As the glass substrate 101, a Corning 7059 glass substrate (strain point 593 ° C.), a Corning 1737 glass substrate (strain point 667 ° C.), or Corning 7940 quartz glass (strain point 990 ° C.) can be used.
[0042]
Further, an extremely thin oxide film 104 serving as a barrier film is formed to a thickness of about 100 mm by a UV oxidation method. The UV oxidation method is a technique for forming an extremely thin oxide film by irradiating UV light in an oxidizing atmosphere. The oxide film 104 may be formed by a thermal oxidation method or a plasma CVD method. The oxide film 104 functions as a barrier film in order to suppress diffusion of a metal element that promotes crystallization of silicon in a later process. (Fig. 1 (A))
[0043]
Next, an OCD solution containing nickel element is applied by a spin coating method, and a silicon oxide film 105 containing nickel is formed through a baking process at 200 ° C. for 30 minutes. In this baking process, since the extremely thin oxide film 104 becomes a barrier film, nickel element is not diffused into the amorphous silicon film 103. (Fig. 1 (B))
[0044]
The OCD solution is a coating solution for forming a silicon oxide film by Tokyo Ohka Kogyo Co., Ltd. When this OCD solution is used, a silicon oxide film 105 containing nickel can be formed so as to form a resist film.
[0045]
The method of introducing nickel element using such a solution can hold nickel element (metal element) uniformly in contact with (or indirectly contact with) the amorphous silicon film 103, and uniform crystal growth. It is a useful tool for making it happen.
[0046]
Next, the silicon oxide film 105 and the oxide film 104 containing nickel are selectively removed using buffer hydrofluoric acid having a reduced concentration. In this way, the state shown in FIG. In this state, a region where the silicon oxide film 105 containing nickel remains is a region where a thin film transistor disposed in the peripheral driver circuit is formed. On the other hand, the region from which the silicon oxide film 105 has been removed becomes a region where a thin film transistor disposed in the pixel region is formed.
[0047]
When the state shown in FIG. 1C is obtained, heat treatment is performed to crystallize the amorphous silicon film 103. This heat treatment is performed at 550 ° C. for 4 hours. In this heat treatment step, nickel penetrates the oxide film 104 from the silicon oxide film 105 containing nickel and diffuses into the amorphous silicon film 103, and the amorphous silicon film 106 is crystallized by the action of nickel. Thus, the crystalline silicon film 106 is transformed. On the other hand, the amorphous silicon film 107 in the pixel region is not crystallized under the conditions of this heat treatment process.
[0048]
This heat treatment step needs to be performed at a temperature of 450 ° C. to 600 ° C. At a temperature of 450 ° C. or lower, the remaining amorphous silicon film 103 under the silicon oxide film 105 cannot be crystallized. Further, when the heat treatment is performed at a temperature of 600 ° C. or higher, the entire amorphous silicon film 103 is crystallized. If the entire amorphous silicon film 103 is crystallized, the purpose of selectively manufacturing a thin film transistor having different characteristics cannot be achieved.
[0049]
After completion of the heat treatment step, KrF excimer laser light (wavelength 248 nm) is irradiated. In this step, the amorphous silicon film 10 7 is It is crystallized by the action of laser light and transformed into a crystalline silicon film 108. On the other hand, the crystalline silicon film 106 is irradiated with laser light through the oxide film 104 and the silicon oxide film 105 and irradiated to the region 106, thereby further promoting the crystallinity.
[0050]
At this time, since the surface of the crystalline silicon film 106 is pressed by the oxide film 104 and the silicon oxide film 105, formation of unevenness on the surface can be suppressed. On the other hand, although unevenness is also formed on the surface of the crystalline silicon film 108, since the nickel element that promotes crystallization of silicon is not introduced into the crystalline silicon film 108, remarkable unevenness that is problematic is formed. It will never be done.
[0051]
In order to obtain the crystalline silicon films 106 and 108, the optimum irradiation energy density of the laser beam is different. The optimum value of the irradiation energy density varies depending on the film thickness, film quality, film forming method, type of laser light, and the like. In this embodiment, the optimum irradiation energy density is 310 to 320 mJ / cm in order to promote the crystallinity of the crystalline silicon film 106. ² In order to form the crystalline silicon film 108, 360 to 390 mJ / cm ² Degree.
[0052]
Further, in this step, the presence of the silicon oxide film 105 makes it possible to irradiate laser light with irradiation energy densities suitable for the region 106 and the region 108, respectively.
[0053]
Here, in the state shown in FIG. 1C, the irradiation energy density is 360 to 390 mJ / cm. ² When the laser beam is irradiated to the extent, the amorphous silicon film 107 is crystallized under almost optimum conditions and transformed into the crystalline silicon film 108. On the other hand, in the crystalline silicon film 106, the energy density of the laser beam is attenuated by the silicon oxide film 105, and is 310 to 320 mJ / cm. ² The degree of irradiation is applied. In order to realize such conditions close to optimum, it is necessary to sufficiently determine the transmittance of the silicon oxide film 105 with respect to the wavelength of the laser beam, that is, the conditions of the film thickness and film quality.
[0054]
Crystalline silicon films 106 and 108 can be obtained by irradiating laser light under conditions close to optimum.
[0055]
However, in the crystalline silicon film 106, since nickel is segregated at the crystal grain boundary, carrier movement via the crystal grain boundary exists. The carrier movement via the crystal grain boundary becomes a factor of leakage current when the thin film transistor is OFF. For this reason, the thin film transistor in which the active layer is formed using the crystalline silicon film 106 has poor OFF current characteristics. However, since the crystalline silicon film 106 has favorable crystallinity, a thin film transistor that can flow a larger ON current and can operate at high speed can be manufactured.
[0056]
On the other hand, the crystalline silicon film 108 is inferior in crystallinity to the crystalline silicon film 106, but the presence of crystal grain boundaries is not remarkable, and the film quality is dense. Have To do. Further, the movement of carriers via the crystal grain boundary is not so remarkable. Therefore, the thin film transistor in which the active layer is formed using the crystalline silicon film 108 has a large mobility. Height Doing high speed operation Is However, the OFF current characteristics can be improved.
[0057]
The remaining silicon oxide film 105 and oxide film 104 are removed using buffered hydrofluoric acid to obtain the state shown in FIG.
[0058]
Next, by the action of nickel, the crystalline silicon film 106 crystallized by heating and laser light irradiation and the crystalline silicon film 108 crystallized by laser light irradiation are respectively patterned, and FIG. The active layers 201, 202, and 203 of the thin film transistor are formed as shown in FIG. The active layers 201 and 202 are composed of the crystalline silicon film 106 crystallized by the action of nickel, and become active layers of thin film transistors disposed in the peripheral drive circuit. On the other hand, the active layer 203 is composed of a crystalline silicon film 108 crystallized only by laser light irradiation, and becomes an active layer of a thin film transistor disposed in the pixel region. Further, a silicon oxide film 204 serving as a gate insulating film is formed on the surface of these active layers 201 to 203 to a thickness of 1000 mm. (Fig. 2 (B))
[0059]
Next, a gate electrode 205 to 207 containing aluminum as a main component is formed by forming a film containing scandium as a main component with an electron beam evaporation method having a thickness of 6000 mm and patterning. Then, anodic oxidation using the gate electrodes 205 to 207 as anodes in the electrolytic solution is performed to form oxide layers 208 to 210 with a thickness of 2000 mm. The oxide layers 205 to 207 serve as a mask in a later impurity ion process and function to form an offset gate region. (Fig. 2 (C))
[0060]
2C, a resist mask 301 is formed so as to cover the active layers 202 and 203, and boron ions are implanted into the active layer 201 as shown in FIG. In this step, a P-type source region 302 and drain region 305, a channel formation region 304, and an offset gate region 303 are formed in a self-aligned manner.
[0061]
Next, the resist mask 301 is removed, and a resist mask 306 is newly formed so as to cover the active layer 201. Phosphorus ions are implanted into the active layers 202 and 203 to form N-type source regions 310 and 311, drain regions 307 and 314, channel formation regions 309 and 313, and offset gate regions 308 and 312 in a self-aligned manner. After that, the resist mask 306 is removed, and the entire substrate is laser light The Irradiation activates the source regions 302, 310, 311 and the drain regions 305, 307, 314, respectively. (Fig. 3 (B))
[0062]
Then, a silicon oxide film 315 is formed as an interlayer insulating film by a plasma CVD method. Further, contact holes are formed to form a source electrode 316 and a drain electrode 317 of a P-channel thin film transistor, a source electrode 319 and 320 of an N-channel thin film transistor, and a drain electrode 318 and 321. Here, the drain electrodes 317 and 318 are connected to form a CMOS structure constituting the peripheral drive circuit.
[0063]
Thus, the thin film transistor disposed in the peripheral driver circuit and the thin film transistor disposed in the pixel region can be formed at the same time.
[0064]
【The invention's effect】
A light-transmitting thin film containing a metal element that promotes crystallization of silicon is formed on the surface of the amorphous silicon film, and after that, heat treatment is performed, and further laser irradiation is performed, so that a necessary region is obtained. Thin film transistors having the required characteristics can be produced. By using this technique, thin film transistors arranged in the peripheral circuit region and the pixel region of the active matrix liquid crystal display device can be formed to have required characteristics.
[Brief description of the drawings]
FIG. 1 shows a step of obtaining a crystalline silicon film on a glass substrate.
FIG. 2 illustrates a manufacturing process of a thin film transistor.
FIG. 3 illustrates a manufacturing process of a thin film transistor.
[Explanation of symbols]
101 glass substrate
102 Silicon oxide film (underlying film)
103, 107 Amorphous silicon film
104 Oxide film
105 Silicon oxide film (OCD film)
106, 108 crystalline silicon film
201-203 Active layer
204 Gate insulating film (silicon oxide film)
205-207 Gate electrode mainly composed of aluminum
208-210 Oxide layer
301,306 resist mask
302, 310, 311 source region
303, 308, 312 Offset gate area
304, 309, 313 Channel formation region
305, 307, 314 Drain region
315 Interlayer insulating film (silicon oxide film)
316, 319, 320 Source electrode
317, 318, 321 Drain electrode

Claims (19)

An amorphous silicon film is formed,
Before film is formed with a partially translucent containing a metal element for promoting crystallization of silicon on Kihi amorphous silicon film,
Subjected to heat treatment, wherein by diffusing the metallic element during the previous Kihi amorphous silicon film of light-transmitting thin film having formed a region, to crystallize the amorphous silicon film, in the area binding-crystalline silicon film is formed,
By irradiating a laser beam on at least part of the amorphous silicon film in a region where the thin film is not formed having at least a portion between the light-transmitting front Kiyui-crystalline silicon film, the crystalline silicon film forming a first crystalline silicon film to further crystallize at least a portion, at least a portion of the amorphous silicon film to form a second crystalline silicon film is crystallized,
The crystallinity of the first crystalline silicon film method for manufacturing a semiconductor device, wherein the higher crystallinity of the second crystalline silicon film. An amorphous silicon film is formed,
Before film is formed with a partially translucent containing a metal element for promoting crystallization of silicon on Kihi amorphous silicon film,
Subjected to heat treatment at a temperature of 450 ° C. to 600 ° C., said metal element is diffused in the light-transmitting front Kihi amorphous silicon film of the thin film is formed regions with, the amorphous silicon film It was crystallized, forming a sintered-crystalline silicon film in the area,
By irradiating pre Kiyui-crystalline silicon film and the laser beam to the amorphous silicon film in the region where a thin film having a light-transmitting property is not formed, the first and further crystallizing the binding-crystalline silicon film to form a crystalline silicon film, before the Kihi amorphous silicon film to form a second crystalline silicon film is crystallized,
The crystallinity of the first crystalline silicon film method for manufacturing a semiconductor device, wherein the higher crystallinity of the second crystalline silicon film. An amorphous silicon film formed on a glass substrate,
Before film is formed with a partially translucent containing a metal element for promoting crystallization of silicon on Kihi amorphous silicon film,
Subjected to heat treatment at 450 for the glass substrate over ℃ strain point temperature below said metal element is diffused in the light-transmitting said amorphous silicon film of the thin film is formed regions with, the amorphous the quality silicon film is crystallized to form a binding-crystalline silicon film in the area,
Before Kiyui-crystalline silicon film and then irradiating a laser beam to said amorphous silicon film in the region where a thin film having a light-transmitting property is not formed, the first and further crystallizing the binding-crystalline silicon film of forming a crystalline silicon film, before the Kihi amorphous silicon film to form a second crystalline silicon film is crystallized,
The crystallinity of the first crystalline silicon film method for manufacturing a semiconductor device, wherein the higher crystallinity of the second crystalline silicon film. Forming an amorphous silicon film on a glass substrate;
Forming a light-transmitting thin film containing a metal element that promotes crystallization of silicon on a part of the amorphous silicon film;
The metal element is formed in the amorphous silicon film in the region where the light-transmitting thin film is formed by performing heat treatment at a temperature not lower than the crystallization temperature of the amorphous silicon film and not higher than the strain point of the glass substrate. was allowed to diffuse, the amorphous silicon film is crystallized, the first crystalline silicon film is formed, the second crystalline silicon region thin film is not formed with the light-transmitting in the area Forming a film,
By irradiating laser light to the second crystalline silicon film and the first crystalline silicon film to form a third crystalline silicon film to further crystallize the previous SL first crystalline silicon film, Further crystallizing the second crystalline silicon film to form a fourth crystalline silicon film;
The method for manufacturing a semiconductor device crystallinity of said third crystalline silicon film being higher than the crystallinity of the fourth crystalline silicon film. An amorphous silicon film is formed,
Before film is formed with a partially translucent containing a metal element for promoting crystallization of silicon on Kihi amorphous silicon film,
Subjected to heat treatment, wherein by diffusing the metallic element during the previous Kihi amorphous silicon film of light-transmitting thin film having formed a region, to crystallize the amorphous silicon film, in the area binding-crystalline silicon film is formed,
By irradiating pre Kiyui-crystalline silicon film and the laser beam to the amorphous silicon film in the region where a thin film having a light-transmitting property is not formed, the first and further crystallizing the binding-crystalline silicon film to form a crystalline silicon film, before the Kihi amorphous silicon film to form a second crystalline silicon film is crystallized,
The crystallinity of the first crystalline silicon film method for manufacturing a semiconductor device, wherein the higher crystallinity of the second crystalline silicon film.   6. The method for manufacturing a semiconductor device according to claim 1, wherein a silicon oxide film is used as the light-transmitting thin film.   6. The method for manufacturing a semiconductor device according to claim 1, wherein a thin film that transmits laser light is used as the light-transmitting thin film.   6. The metal element according to claim 1, wherein the metal element for promoting crystallization is selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. A method for manufacturing a semiconductor device, wherein a plurality of types of elements are used. Claim 1乃Itari請 Motomeko in any one of 5, the metal element for promoting crystallization is 1 × 10 during the previous Kihi amorphous silicon film in a region where a thin film having a light transmitting property is formed ^A method for manufacturing a semiconductor device, which is introduced at a concentration of ¹⁶ cm ^{−3 to} 5 × 10 ¹⁹ cm ⁻³ . In any one of claims 1乃Itari請 Motomeko 5, suppressing the diffusion of the metal element on the front Kihi amorphous silicon film before forming the thin film having inclusive the light-transmitting said metal element A method for manufacturing a semiconductor device, comprising forming a barrier film. Oite to claim 10, a method for manufacturing a semiconductor device characterized by oxide film is used as a barrier film to suppress the diffusion of the metal element. A manufacturing method of an electro-optical device to have a pixel region and a peripheral circuit region,
The amorphous silicon film is formed on a substrate having an insulating surface,
Forming a thin film having a light transmitting property containing a metal element for promoting crystallization of silicon on before Kihi amorphous silicon film at least a portion of the area to be the peripheral circuit region,
Subjected to heat treatment, wherein in the light-transmitting front Kihi amorphous silicon thin film is formed region having a film a metal element is diffused, it is crystallized the amorphous silicon film, in the area Forming a first crystalline silicon film ;
By irradiating pre Kiyui-crystalline silicon film and the laser beam to the amorphous silicon film in the region where a thin film having a light-transmitting property is not formed, the first and further crystallizing the binding-crystalline silicon film to form a crystalline silicon film, before the Kihi amorphous silicon film to form a second crystalline silicon film is crystallized,
Forming a thin film transistor using the first crystalline silicon film and the second crystalline silicon film;
Method for manufacturing an electro-optical device crystallinity of the first crystalline silicon film being higher than the crystallinity of the second crystalline silicon film. A manufacturing method of an electro-optical device to have a pixel region and a peripheral circuit region,
The amorphous silicon film is formed on a substrate having an insulating surface,
Forming a thin film having a light transmitting property containing a metal element for promoting crystallization of silicon on before Kihi amorphous silicon layer 281 corresponding to the peripheral circuit region,
Subjected to heat treatment at a temperature of 450 ° C. to 600 ° C., said metal element is diffused into the front Kihi amorphous silicon film of the thin film having a light transmitting property is formed region, the amorphous silicon film the forming a crystalline silicon film in this region is crystallized
By irradiating laser light to the amorphous silicon film in a region where a thin film having the translucent and the crystalline silicon film is not formed, the first crystalline was further crystallizing the binding-crystalline silicon film silicon film is formed, before the Kihi amorphous silicon film to form a second crystalline silicon film is crystallized,
Forming a thin film transistor using the first crystalline silicon film and the second crystalline silicon film;
Method for manufacturing an electro-optical device crystallinity of the first crystalline silicon film being higher than the crystallinity of the second crystalline silicon film. A manufacturing method of an electro-optical device to have a pixel region and a peripheral circuit region,
An amorphous silicon film formed on a glass substrate,
Forming a thin film having a light transmitting property containing a metal element for promoting crystallization of silicon on before Kihi amorphous silicon layer 281 corresponding to the peripheral circuit region,
Subjected to heat treatment at a temperature strain point of the glass substrate 450 ° C. or higher, thereby diffusing the metallic element during the previous Kihi amorphous silicon film of the thin film having a light transmitting property is formed region, the non the amorphous silicon film is crystallized to form a binding-crystalline silicon film in the area,
By irradiating pre Kiyui-crystalline silicon film and the laser beam to the amorphous silicon film in the region where a thin film having a light-transmitting property is not formed, the first and further crystallizing the binding-crystalline silicon film to form a crystalline silicon film, before the Kihi amorphous silicon film to form a second crystalline silicon film is crystallized,
Forming a thin film transistor using the first crystalline silicon film and the second crystalline silicon film;
Method for manufacturing an electro-optical device crystallinity of the first crystalline silicon film to be higher than the second crystalline silicon film. A manufacturing method of an electro-optical device to have a pixel region and a peripheral circuit region,
Forming an amorphous silicon film on a glass substrate;
Forming a light-transmitting thin film containing a metal element that promotes crystallization of silicon on the amorphous silicon film in a region to be the peripheral circuit region;
The metal element is formed in the amorphous silicon film in the region where the light-transmitting thin film is formed by performing heat treatment at a temperature not lower than the crystallization temperature of the amorphous silicon film and not higher than the strain point of the glass substrate. was allowed to diffuse, the amorphous silicon film is crystallized, the first crystalline silicon film is formed, the second crystalline silicon region thin film is not formed with the translucent in the area Forming a film,
By irradiating laser light to the second crystalline silicon film and the first crystalline silicon film to form a third crystalline silicon film to further crystallize the previous SL first crystalline silicon film, Further crystallizing the second crystalline silicon film to form a fourth crystalline silicon film;
Forming a thin film transistor using the third crystalline silicon film and the fourth crystalline silicon film;
The method of manufacturing an electro-optical device, wherein the third crystalline silicon film has higher crystallinity than the fourth crystalline silicon film. 16. The method for manufacturing an electro-optical device according to claim 12 , wherein a silicon oxide film is used as the light-transmitting thin film. 16. The method for manufacturing an electro-optical device according to claim 12 , wherein a thin film that transmits laser light is used as the light-transmitting thin film. 16. The metal element according to claim 12 , wherein the metal element for promoting crystallization is selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. A method for manufacturing an electro-optical device, wherein a plurality of types of elements are used. According to any one of claims 12 to claim 15, wherein the metal element for promoting crystallization is 1 × 10 ¹⁶ cm in front Kihi amorphous silicon film in a region where a thin film having a light transmitting property is formed ^{-3 to} 5 × 10 ¹⁹ cm ^-3 . The method for manufacturing an electro-optical device, wherein the electro-optical device is introduced.

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