JPH0855927A - Hollow package - Google Patents
Hollow packageInfo
- Publication number
- JPH0855927A JPH0855927A JP6190302A JP19030294A JPH0855927A JP H0855927 A JPH0855927 A JP H0855927A JP 6190302 A JP6190302 A JP 6190302A JP 19030294 A JP19030294 A JP 19030294A JP H0855927 A JPH0855927 A JP H0855927A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- package
- semiconductor element
- hollow package
- hollow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＩＣ、ＣＣＤ（固体撮
像素子）等の半導体素子を収納する中空パッケージに関
するもので、より詳しくは、耐湿性にすぐれた中空パッ
ケージに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hollow package for housing semiconductor elements such as ICs and CCDs (solid-state image pickup elements), and more particularly to a hollow package having excellent moisture resistance.
【０００２】[0002]
【従来の技術】半導体装置の一部を構成する中空パッケ
ージは、樹脂製の箱型成形品にリードフレームがインサ
ート成形されてなり、この成形品内底部に半導体素子が
接着され、さらに成形品上部開口部が、リッドとよばれ
る透明ないし不透明の蓋でふさがれることにより半導体
装置として使用されている。半導体装置は、ビデオカメ
ラ等のエレクトロニクス製品に組み込まれて使用される
ことから、内部に収納された半導体素子が常に正常に作
動するために、厳しい耐湿性が要求されている。そのた
めに、半導体装置の容器に相当する中空パッケージは、
プレッシャークッカーテストという過酷なテストに耐え
得る優れた耐湿性を長期に亙って保持し得る耐久性が望
まれている。2. Description of the Related Art A hollow package, which constitutes a part of a semiconductor device, is formed by insert-molding a lead frame into a resin-made box-shaped molded product, and a semiconductor element is bonded to the bottom of the molded product. The opening is covered with a transparent or opaque lid called a lid, so that the opening is used as a semiconductor device. Since the semiconductor device is used by being incorporated in an electronic product such as a video camera, the semiconductor element housed therein always operates normally, and thus strict moisture resistance is required. Therefore, the hollow package corresponding to the container of the semiconductor device is
Durability that can maintain excellent moisture resistance that can withstand the harsh test of pressure cooker for a long time is desired.
【０００３】これまで、中空パッケージの耐湿性を高め
るために、パッケージを構成する樹脂組成物の改良がな
されてきた。例えば、エポキシ樹脂の化学構造を、ノボ
ラック型やビスフェノールＡ型等の基本構造から、種々
の改良構造へと変えることが試みられてきたが、必ずし
も満足し得る程には耐湿性は向上しなかったし、また組
成物を構成する他の配合物、例えば、金型との離型性を
よくするための離型剤、あるいは、熱膨張率や熱伝導率
を調整するために加えられてきた各種のフィラーは、そ
の種類や配合量を調整しても中空パッケージの耐湿性を
充分に向上させることはできなかった。Heretofore, in order to improve the moisture resistance of the hollow package, the resin composition constituting the package has been improved. For example, attempts have been made to change the chemical structure of an epoxy resin from a basic structure such as a novolac type or a bisphenol A type to various improved structures, but the moisture resistance has not necessarily improved to a satisfactory level. In addition, other compounds constituting the composition, for example, a mold release agent for improving the mold releasability from the mold, or various kinds of compounds added for adjusting the thermal expansion coefficient and the thermal conductivity. The filler of (1) could not sufficiently improve the humidity resistance of the hollow package even if the kind and amount of the filler were adjusted.
【０００４】[0004]
【発明の目的】そこで、本発明の目的は、半導体装置の
素材の点からの改良ではなく、構造的な観点から半導体
装置に改良を加え、耐湿性に優れた中空パッケージを提
供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is not to improve the material of the semiconductor device but to improve the semiconductor device from a structural point of view, and to provide a hollow package excellent in moisture resistance. .
【０００５】[0005]
【課題を解決するための手段】本発明者は、中空パッケ
ージの耐湿性を高めるために種々検討した結果、中空パ
ッケージの耐湿性を左右する要因は、主に、リードフレ
ームと樹脂層との界面状態にあることを見いだした。す
なわち、リードフレームと樹脂層との密着性が強固なほ
ど、長時間の使用に耐える耐湿性が得られることが明ら
かとなった。本発明は、上記知見に基づいてなされたも
のであり、下記の点に特徴を有するものである。すなわ
ち、本発明によれば、半導体素子を収納するための凹部
を有する樹脂製のパッケージ本体と、一端部が凹部内に
延出されると共に他端部が前記パッケージ本体外部へ延
出された状態で中間部が前記パッケージ本体に埋め込ま
れ前記一端部を介して前記半導体素子と電気的に接続さ
れるリードフレームとを備えた中空パッケージにおい
て、前記リードフレームの中間部を粗面に形成したこと
を特徴とする中空パッケージが提供される。As a result of various studies conducted by the present inventor to improve the humidity resistance of the hollow package, the factors affecting the humidity resistance of the hollow package are mainly the interface between the lead frame and the resin layer. I found that I was in a state. That is, it became clear that the stronger the adhesion between the lead frame and the resin layer is, the more the moisture resistance that can withstand long-term use is obtained. The present invention has been made on the basis of the above findings, and is characterized by the following points. That is, according to the present invention, in a resin package main body having a recess for accommodating a semiconductor element, in a state where one end extends into the recess and the other end extends outside the package main body. In a hollow package including a lead frame having an intermediate portion embedded in the package body and electrically connected to the semiconductor element through the one end, the intermediate portion of the lead frame is formed into a rough surface. A hollow package is provided.
【０００６】[0006]
【発明の具体的説明】図１は本発明に係る中空パッケー
ジを用いた半導体装置の断面図である。半導体装置９
は、樹脂製の箱型パッケージ１、半導体素子２、リード
フレーム３、及びリッド４とから構成されている。箱型
パッケージ１の中央には、半導体素子２を収納するため
の凹部５が設けられており、この凹部５に半導体素子２
が接着剤６によって固定され、さらに、半導体素子２と
リードフレーム３とは、ボンディングワイヤー７によっ
て電気的に接続されている。また、箱型パッケージ１の
上端面１ａには、リッド４が接着剤８によって接着固定
されており、これにより、箱型パッケージ１の上部開口
部１ｂが閉止されている。DETAILED DESCRIPTION OF THE INVENTION FIG. 1 is a sectional view of a semiconductor device using a hollow package according to the present invention. Semiconductor device 9
Is composed of a box-shaped package 1 made of resin, a semiconductor element 2, a lead frame 3, and a lid 4. A concave portion 5 for accommodating the semiconductor element 2 is provided in the center of the box-type package 1, and the semiconductor element 2 is accommodated in the concave portion 5.
Are fixed by an adhesive 6, and the semiconductor element 2 and the lead frame 3 are electrically connected by a bonding wire 7. Further, the lid 4 is adhesively fixed to the upper end surface 1a of the box-type package 1 with an adhesive agent 8, whereby the upper opening 1b of the box-type package 1 is closed.
【０００７】本発明では、リードフレーム３が箱型パッ
ケージ１と一体になっている成形体を中空パッケージと
呼んでいる。それ故に、中空パッケージは次のようにし
て製造される。すなわち、箱型パッケージ１は、エポキ
シ樹脂、ポリイミド樹脂等を用いてトランスファー成
形、あるいは、射出成形によって製造されるが、成形に
先立ち、予め金型中にリードフレーム３が挿入され、そ
の後樹脂が注入され硬化ないしは固化される。In the present invention, a molded body in which the lead frame 3 is integrated with the box type package 1 is called a hollow package. Therefore, the hollow package is manufactured as follows. That is, the box package 1 is manufactured by transfer molding or injection molding using epoxy resin, polyimide resin or the like. Prior to molding, the lead frame 3 is inserted into the mold in advance, and then the resin is injected. Then, it is hardened or solidified.
【０００８】図２は、箱型パッケージ１を上部開口部１
ｂ側から見た平面図である。箱型パッケージ１には、リ
ードフレーム３が埋め込まれており、半導体素子２と接
続されるインナーリード部３ａ、及び外部と接続される
アウターリード部３ｂが露出されている。このインナー
リード部３ａとアウターリード部３ｂとの中間部分１１
が箱型パッケージ１を構成する樹脂１０に埋め込まれて
いる。したがって、リードフレーム３の中間部分１１は
樹脂層中に固定され、これによりリードフレーム３が位
置決めされた状態で固定される。FIG. 2 shows a box-shaped package 1 with an upper opening 1
It is the top view seen from the b side. A lead frame 3 is embedded in the box-type package 1, and an inner lead portion 3a connected to the semiconductor element 2 and an outer lead portion 3b connected to the outside are exposed. Intermediate portion 11 between the inner lead portion 3a and the outer lead portion 3b
Are embedded in the resin 10 forming the box-type package 1. Therefore, the intermediate portion 11 of the lead frame 3 is fixed in the resin layer, whereby the lead frame 3 is fixed in the positioned state.
【０００９】図３は、リードフレーム３の平面図を示し
ており、その中間部分１１が粗面化されている。粗面
は、前記リードフレームの中間部分の少なくとも一面に
施されていることが必要であり、両面に施されていれ
ば、耐湿性の効果は一層優れたものになる。なお、イン
ナーリード部３ａ及びアウターリード部３ｂには粗面化
は施されていない。ここで使用されるリードフレーム３
は、前述したように樹脂層中に埋め込まれ固定される部
分（中間部分１１）、すなわち、樹脂層と密着する部分
が粗面化されている。この粗面には、深さ０．５ないし
１．０μｍ、直径５ないし２０μｍ程度の凹部が連続し
て形成されている。リードフレーム３における中間部分
１１以外、すなわち、半導体素子２とワイヤーボンディ
ングされるインナーリード部３ａや、また外部とボンデ
ィングされるアウターリード部３ｂは、粗面化されてい
ると、成形時に発生したバリが強固にこびりつき、後工
程での洗浄操作でも樹脂を完全に除去することが困難に
なるために、金属線その他の配線とのボンディング力が
弱くなるので、リードフレーム３の中間部分１１のみ
を、粗面化している。FIG. 3 is a plan view of the lead frame 3, in which an intermediate portion 11 is roughened. It is necessary that the rough surface is provided on at least one surface of the intermediate portion of the lead frame, and if it is provided on both surfaces, the effect of moisture resistance becomes more excellent. The inner lead portion 3a and the outer lead portion 3b are not roughened. Lead frame 3 used here
As described above, the portion (intermediate portion 11) embedded and fixed in the resin layer, that is, the portion in close contact with the resin layer is roughened. On this rough surface, a recess having a depth of 0.5 to 1.0 μm and a diameter of about 5 to 20 μm is continuously formed. If the surface other than the intermediate portion 11 of the lead frame 3, that is, the inner lead portion 3a wire-bonded to the semiconductor element 2 and the outer lead portion 3b bonded to the outside is roughened, burrs generated at the time of molding are generated. Firmly sticks, and it becomes difficult to completely remove the resin even in the cleaning operation in the subsequent process, and the bonding force with the metal wire or other wiring becomes weak. Therefore, only the intermediate portion 11 of the lead frame 3 is It is roughened.
【００１０】前述した程度の粗面化をリードフレーム３
に施す方法として、機械的な方法や熱的な方法を例示で
きる。機械的な方法としては、乾式または湿式のサンド
ブラスト法、ウオタージェット法、サンドペーパもしく
はやすりを用いた砥粒法、あるいは、プレス法が挙げら
れる。熱的な方法としては、レーザ照射、放電加工、オ
ーブンやファーネスを用いる方法がある。これらの方法
を採用する際に、粗面化を行わない部分（インナーリー
ド部３ａ、アウターリード部３ｂ）には、あらかじめマ
スキングを施しておけば、必要箇所のみを容易に粗面化
することができる。The lead frame 3 is roughened to the above degree.
Examples of the method of applying to the above include mechanical methods and thermal methods. Examples of mechanical methods include a dry or wet sandblast method, a water jet method, an abrasive grain method using sandpaper or a file, and a pressing method. Thermal methods include laser irradiation, electric discharge machining, and methods using an oven or a furnace. When these methods are adopted, if the portions not to be roughened (inner lead portions 3a, outer lead portions 3b) are masked in advance, only the necessary portions can be easily roughened. it can.
【００１１】[0011]
【発明の効果】本発明では、上記の如くリードフレーム
の樹脂層と接触する部分が粗面化されていることから、
中空パッケージの成形時にリードフレームとパッケージ
とが強固に接着する。その結果、厳しいプレッシャーク
ッカーテストにおいても、耐久時間を延ばすことがで
き、耐湿性に優れた中空パッケージとなる。According to the present invention, since the portion of the lead frame which comes into contact with the resin layer is roughened as described above,
The lead frame and the package are firmly adhered to each other when the hollow package is molded. As a result, even in a severe pressure cooker test, the durability time can be extended, and the hollow package has excellent moisture resistance.
【００１２】[0012]
【実施例】予め次の方法で予備試験を行い、粗面化の効
果を調べた。まず、図４に示す如く、矩形状の基部１４
ａの一端部から幅細の延出片１４ｂが延出されてなり、
厚さが０．２５ｍｍの４−２アロイ製の金属板１４を用
い、表面処理方法を変えることで、３種類の金属板を準
備した。表面処理は、以下に示す方法によって、延出片
１４ｂの両面に施した。 表面処理Ａ法・・・・平均粒径１４μｍのアルミナ粉体を直
径３．０ｍｍのノズルから空気圧２．５Ｋｇ／ｃｍ2
Ｇ、送り速度１８ｍｍ／ｓｅｃの条件でエアブラストす
る。 表面処理Ｂ法・・・・１００Ｗのレーザ照射機によって、パ
ルス幅１．８ｍｓ、繰り返し周波数４５ＰＰＳの条件で
照射する。 表面処理Ｃ法・・・・何もせず。Example A preliminary test was conducted in advance by the following method to examine the effect of roughening. First, as shown in FIG. 4, a rectangular base portion 14
A thin extension piece 14b is extended from one end of a,
A metal plate 14 made of 4-2 alloy having a thickness of 0.25 mm was used, and three types of metal plates were prepared by changing the surface treatment method. The surface treatment was performed on both surfaces of the extending piece 14b by the method described below. Surface treatment A method: Alumina powder with an average particle size of 14 μm is blown from a nozzle with a diameter of 3.0 mm to an air pressure of 2.5 Kg / cm 2.
Air blast under the conditions of G and feed rate of 18 mm / sec. Surface treatment B method: Irradiation with a 100 W laser irradiator under the conditions of a pulse width of 1.8 ms and a repetition frequency of 45 PPS. Surface treatment C method ...
【００１３】次に、図５に実線で示すパッケージ形状の
金型１２に、金属板１４の延出片１４ｂの先端部をイン
サートし、トランスファー成形機を用いて、エポキシ樹
脂を１６５℃、１２０Ｋｇ／ｃｍ2 、２分の条件で成形
し、これを試験片とした。引張試験機（テンシロンＵＣ
Ｔ−５Ｔ）によって、金属板とエポキシ樹脂層との引抜
接着力（Ｋｇ／ｍｍ2 ）の測定を、引張速度５ｍｍ／ｍ
ｉｎの条件で行った。その結果を表１に示した。Next, the tip of the extending piece 14b of the metal plate 14 is inserted into the package-shaped mold 12 shown by the solid line in FIG. 5, and epoxy resin is used at 165 ° C. and 120 kg / g using a transfer molding machine. The test piece was molded under the condition of cm 2 for 2 minutes. Tensile tester (Tensilon UC
T-5T) was used to measure the pull-out adhesive strength (Kg / mm 2 ) between the metal plate and the epoxy resin layer, and the pulling speed was 5 mm / m.
It was conducted under the condition of in. The results are shown in Table 1.
【００１４】 [0014]
【００１５】次いで、図３に示したリードフレームが１
２個連続したリードフレーム板を用意し、インナーリー
ド部とアウターリード部とを治具またはシールテープを
用いてマスキングした。そして、前記した表面処理を施
し、トランスファー成形機を用いて図２に示すようなエ
ポキシ樹脂製の中空パッケージを得た。この中空パッケ
ージにガラスリッドをエポキシ樹脂接着剤を用いてかぶ
せてパッケージを作成し、プレッシャークッカーテスト
を実施した。テスト条件は、１２１℃、１００％の蒸気
中に所定時間放置し、その後２５℃の恒温室に３０分置
き、ガラスリッドに曇の発生することを観察した。曇の
発生するまでの時間を耐久時間とし、その結果を表２に
示した。耐久時間が長いほど耐湿性は良好と判定した。Next, the lead frame shown in FIG.
Two continuous lead frame plates were prepared, and the inner lead portion and the outer lead portion were masked using a jig or a seal tape. Then, the surface treatment described above was performed, and a hollow package made of epoxy resin as shown in FIG. 2 was obtained using a transfer molding machine. The hollow package was covered with a glass lid using an epoxy resin adhesive to form a package, and a pressure cooker test was performed. The test conditions were that the glass lid was left standing in steam of 121 ° C. and 100% for a predetermined time, and then placed in a constant temperature room of 25 ° C. for 30 minutes, and it was observed that clouding occurred on the glass lid. The time until the occurrence of fogging was defined as the durability time, and the results are shown in Table 2. It was judged that the longer the durability time was, the better the moisture resistance was.
【００１６】 [0016]
【図１】本発明に係る中空パッケージが使用された半導
体装置の概略断面図である。FIG. 1 is a schematic cross-sectional view of a semiconductor device using a hollow package according to the present invention.
【図２】本発明に係る中空パッケージの概略平面図であ
る。FIG. 2 is a schematic plan view of a hollow package according to the present invention.
【図３】本発明に係る中空パッケージの一部を構成する
リードフレームの概略平面図である。FIG. 3 is a schematic plan view of a lead frame forming a part of the hollow package according to the present invention.
【図４】予備試験に用いた金属板の平面図である。FIG. 4 is a plan view of a metal plate used in a preliminary test.
【図５】予備試験に用いた試験片作成用の金型の平面図
である。FIG. 5 is a plan view of a mold for preparing a test piece used in a preliminary test.
【符号の説明】 １ 箱型パッケージ（パッケージ本体） ２ 半導体素子 ３ リードフレーム ３ａ インナーリード部（一端部） ３ｂ アウターリード部（他端部） １１ 中間部分（中間部）[Explanation of reference numerals] 1 box type package (package body) 2 semiconductor element 3 lead frame 3a inner lead part (one end) 3b outer lead part (other end) 11 middle part (middle part)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 稲田 邦博 千葉県袖ヶ浦市長浦字拓二号580番32 三 井石油 化学工業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Kunihiro Inada 580-32, Takuji Nagaura, Tsuboji Nagaura, Sodegaura, Chiba Prefecture Mitsui Petrochemical Industry Co., Ltd.
Claims (1)
る樹脂製のパッケージ本体と、一端部が凹部内に延出さ
れると共に他端部が前記パッケージ本体外部へ延出され
た状態で中間部が前記パッケージ本体に埋め込まれ前記
一端部を介して前記半導体素子と電気的に接続されるリ
ードフレームとを備えた中空パッケージにおいて、前記
リードフレームの中間部を粗面に形成したことを特徴と
する中空パッケージ。1. A resin package main body having a recess for accommodating a semiconductor element, and an intermediate portion with one end extending into the recess and the other end extending outside the package main body. A hollow package including a lead frame embedded in the package body and electrically connected to the semiconductor element through the one end, wherein a hollow portion is formed at an intermediate portion of the lead frame. package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6190302A JPH0855927A (en) | 1994-08-12 | 1994-08-12 | Hollow package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6190302A JPH0855927A (en) | 1994-08-12 | 1994-08-12 | Hollow package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0855927A true JPH0855927A (en) | 1996-02-27 |
Family
ID=16255901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6190302A Pending JPH0855927A (en) | 1994-08-12 | 1994-08-12 | Hollow package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0855927A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0867935A3 (en) * | 1997-03-25 | 2000-03-15 | Mitsui Chemicals, Inc. | Plastic package, semiconductor device, and method of manufacturing plastic package |
| JP2002326252A (en) * | 2001-05-02 | 2002-11-12 | Idemitsu Petrochem Co Ltd | Metal inserted polyphenylene sulfide resin molded part |
| EP0788157A3 (en) * | 1996-02-01 | 2004-02-25 | NEC Compound Semiconductor Devices, Ltd. | Resin molded package with excellent high frequency characteristics |
| JP2007088211A (en) * | 2005-09-22 | 2007-04-05 | Toppan Printing Co Ltd | Lead frame and its manufacturing method |
-
1994
- 1994-08-12 JP JP6190302A patent/JPH0855927A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0788157A3 (en) * | 1996-02-01 | 2004-02-25 | NEC Compound Semiconductor Devices, Ltd. | Resin molded package with excellent high frequency characteristics |
| EP0867935A3 (en) * | 1997-03-25 | 2000-03-15 | Mitsui Chemicals, Inc. | Plastic package, semiconductor device, and method of manufacturing plastic package |
| US6087713A (en) * | 1997-03-25 | 2000-07-11 | Mitsui Chemicals, Inc. | Plastic package, semiconductor device, and method of manufacturing plastic package |
| JP2002326252A (en) * | 2001-05-02 | 2002-11-12 | Idemitsu Petrochem Co Ltd | Metal inserted polyphenylene sulfide resin molded part |
| WO2002090083A1 (en) * | 2001-05-02 | 2002-11-14 | Idemitsu Petrochemical Co., Ltd. | Method of producing metal insert polyphenylene sulfide resin molded component, the molded component and semiconductor producing device having it |
| JP2007088211A (en) * | 2005-09-22 | 2007-04-05 | Toppan Printing Co Ltd | Lead frame and its manufacturing method |
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