JPH08321565A - Semiconductor device - Google Patents

Abstract

PURPOSE: To prevent warping of base board and generation of reflow crack at the time of mounting at the time of leading out the bump electrode of a semiconductor chip electrically to the conductive part of base board through an intermediate conductor. CONSTITUTION: A through hole 3 is made in the center of a base board 2 and a semiconductor chip 4, comprising an LSI chip, is contained therein. Size of the through hole 3 is set such that a semiconductor chip 4 if different sizes can be contained. Thickness of the base board 2 is set larger than that of the semiconductor chip 4 contained in the through hole 3. A plurality of balls 5 of solder (Pb-Sn alloy), for example, are arranged in grid on the rear 2B of the base board 2 being connected with a mounting board. A lead 7, serving as an intermediate conductor, is arranged between the bump electrode 6 on the semiconductor chip 4 and a conductive pattern formed on the rear 4B of the base board 2 while being soldered at the opposite ends thereof.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a semiconductor device in which a plurality of bump electrodes formed on the surface of a semiconductor chip are electrically drawn out to a conductive portion of a base substrate through an intermediate conductor. Regarding effective technology.

[0002]

2. Description of the Related Art As a kind of recent LSI package, for example, Nikkei BP, "Nikkei Electronics," 1994, 2-14, P59 to P73, or the same company, 1994, 2-28, P111 ~
BGA (Ball G as described in P117).
Rid Array) structure is known. This BGA
The structure is such that in a surface-mount type LSI, a ball-shaped conductor such as solder (hereinafter,
A plurality of balls are arranged in a lattice on the back surface of the base substrate.

That is, in this BGA structure package, a semiconductor chip having a plurality of bump electrodes formed on the surface thereof is fixed to the surface of a base substrate made of an insulating material with an adhesive, and the plurality of bump electrodes have bonding wires. Through a conductive portion on the surface of the base substrate. Further, the conductive portion on the front surface is extended to the back surface of the base substrate through the through hole wiring, and the ball is provided on the back surface.

This BGA structure package is a QFP (Quad Flat Package) which is a typical package that has been used in LSIs before this.
In comparison with, the balls as external terminals are provided on the entire surface of the package without being pulled out from the side surface of the package, so the pin pitch can be reduced in the case of higher integration, and if the number of pins is the same, the package It has the advantage of reducing the area and is suitable for multi-pin packages.

In such a PGA structure package,
The surface of the base substrate is covered with a resin body molded by the transfer molding method, and the semiconductor chip is sealed with this resin body and protected from the external atmosphere.

The LSI having the package of the BGA structure thus obtained is passed through the reflow soldering furnace while facing the mounting board to melt the balls to the corresponding conductive portion of the mounting board. Connected.

[0007]

As described above, the BGA structure has been put to practical use as a package effective for increasing the number of pins, but the resin body encapsulating the semiconductor chip is formed only on the surface of the base substrate. Therefore, there is a problem that an excessive force is applied to the base substrate when the resin body is cured and contracted, and the base substrate is warped.

In particular, when attempting to increase the number of pins, the warp increases as the base substrate increases in size. When the base substrate warps in this way, among the plurality of balls arranged on the back surface of the base substrate,
The more distant from the center position, the more prominent the swelling, so that a connection failure will occur at the time of connection to the mounting board.

Further, there is an adhesive for fixing the semiconductor chip on the surface of the base substrate. However, since this adhesive has a property of easily absorbing moisture from the surroundings, it is allowed to pass through the reflow soldering furnace. When mounting on a mounting board, the moisture contained in the adhesive evaporates by heating, so that there is a problem that reflow cracks easily occur due to this effect.

That is, the water trapped in the adhesive evaporates by heating, but since there is no escape route, the water enters the adjacent resin bodies, and the resin bodies crack.

An object of the present invention is to prevent warpage of the base substrate when electrically extracting the bump electrode of the semiconductor chip to the conductive portion of the base substrate through the intermediate conductor.
It aims to provide a technology capable of preventing the occurrence of reflow cracks during mounting.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0013]

Among the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

The semiconductor device of the present invention is a semiconductor device in which a plurality of bump electrodes formed on the surface of a semiconductor chip are electrically drawn out to a conductive portion of a base substrate through an intermediate conductor, and the base substrate has through holes. Is formed, the semiconductor chip is housed in the through hole, and the intermediate conductor is arranged between the base substrate and the semiconductor chip.

[0015]

According to the above-mentioned means, in the semiconductor device of the present invention, the plurality of bump electrodes formed on the surface of the semiconductor chip are electrically connected to the conductive portion through the intermediate conductor to form the through hole in the base substrate. The semiconductor chip is formed and accommodated in the through hole, and the intermediate conductor is arranged between the base substrate and the semiconductor chip.

Therefore, when the bump electrode of the semiconductor chip is electrically drawn out to the conductive portion of the base substrate through the intermediate conductor, an unreasonable force is not applied to the base substrate, so that the warp of the base substrate is prevented and at the time of mounting. Since there is no evaporation of water from the adhesive, it is possible to prevent the occurrence of reflow cracks.

Hereinafter, the present invention will be described in detail with reference to the drawings together with embodiments.

In the drawings for explaining the embodiments, those having the same function are designated by the same reference numerals and their repeated description will be omitted.

[0019]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a plan view showing a semiconductor device according to Embodiment 1 of the present invention, showing an example applied to a package having a BGA structure, and FIG. 2 is a sectional view taken along line AA of FIG. . The semiconductor device 1 of this embodiment is made of, for example, ceramics,
A through hole 3 is formed in a central portion of a base substrate 2 made of an insulating material such as plastic, and the through hole 3 has an L
A semiconductor chip 4 composed of an SI chip is stored.
The size of the through hole 3 is set so that the semiconductor chips 4 of various sizes can be stored. In addition, the base substrate 2
Is set to be larger than the thickness of the semiconductor chip 4 housed in the through hole 3. As an example, a semiconductor chip 4 having a thickness of 0.25 to 0.60 mm and a base substrate 2 having a thickness of 0.6 to 0.8 mm are used.

A plurality of ball-shaped conductors (hereinafter referred to as balls) 5, such as solder (Pb-Sn alloy), are formed on the back surface 2B (lower surface in the figure) connected to the mounting substrate of the base substrate 2. They are arranged in a grid. The ball 5 acts as a conductive portion of the base substrate 2 and is connected to the corresponding conductive portion when mounted on the mounting substrate. Also, the ball 5
Are electrically connected to a conductive pattern (not shown) formed on the back surface 2B of the base substrate 2. As an example, ball 5
Has a diameter of 0.4 to 0.7 mm.

On the surface 4A of the semiconductor chip 4, bump electrodes 6 such as solder (Pb-Sn alloy), Au, and Cu are formed.
Are formed, and the bump electrodes 6 are formed on the semiconductor chip 4
The wiring layer (not shown) exposed on the surface 4A is formed by growing each conductive material as described above by a plating method, a vapor deposition method, or the like. As an example, the bump electrode 6 is formed to have a height of 0.2 to 0.3 mm. In the case of this embodiment, the semiconductor chip 4 has its surface 4A.
In the example shown in FIG.

Between the bump electrode 6 of the semiconductor chip 4 arranged so that the front surface 4A faces downward and between the conductive pattern formed on the back surface 4B of the base substrate 2, a lead which functions as an intermediate conductor for conducting the both. 7 are arranged, and both ends of the lead 7 are connected by soldering or the like. As the lead 7 will be described later, TAB (T ape
It is formed by utilizing the A utomated B onding) tape. As a result, the surface 4 of the semiconductor chip 4 is
The plurality of bump electrodes 6 formed on A are electrically extracted to the balls 5 of the base substrate 2.

Both the front surface 2A of the base substrate 2 and the back surface 2B except the positions where the balls 5 are formed are covered with a resin body 8 such as an epoxy resin. The resin body 8 is formed by a well-known transfer molding method as described later. The resin body 8 is completely filled in the through hole 3 to seal the semiconductor chip 4 and the leads 7.

By thus covering both the front surface 2A and the back surface 2B of the base substrate 2 with the resin body 8, both surfaces of the base substrate 2 can be covered in a well-balanced manner, and as a result, when the resin body 8 cures and contracts, the base substrate 2 shrinks. It becomes possible to prevent an unreasonable force from being applied to 2.

FIG. 3 is a cross-sectional view showing a mounting example of the semiconductor device 1 obtained in this embodiment. The mounting substrate 10 is made of an insulating material such as ceramics or glass epoxy.
The conductive portion 11 is formed on the surface of the semiconductor device 1.
The plurality of balls 5 on the back surface 2B of the base substrate 2 are connected to the corresponding conductive portions 11 of the mounting substrate 10 by soldering or the like.

Next, with reference to FIGS. 4 to 9, a method of manufacturing the semiconductor device 1 of this embodiment will be described in the order of steps.

First, as shown in FIG. 4, a semiconductor chip 4 having a plurality of bump electrodes 6 formed on its surface 4A, and a plurality of leads 7 corresponding to the bump electrodes 6 are integrally supported by an insulating tape 12 as a lead member. 13 is prepared and arranged so as to face each other. As the lead member 13, for example, a thickness such as a copper foil formed by etching, instead of the wire used in normal wire bonding, on the insulating tape 12 having a thickness of 50 to 200 μm such as polyimide. A TAB tape having a structure in which the leads 7 of 18 to 70 μm are fixed can be used.

Next, as shown in FIG. 5, the semiconductor chip 4
With the bump electrode 6 and the corresponding tip of the lead 7 of the lead member 13 aligned, the semiconductor chip 4 is supported by the support base 15, and the tip of the lead 7 is pressure-bonded by the bonding tool 16 as indicated by the arrow. The so-called gang bonding (collective bonding) is performed to bond the leads 7 to the bump electrodes 6.

Subsequently, as shown in FIG. 6, the lead 7 of the lead member 13 in FIG. 5 is cut at a position in front of the insulating tape 12 as shown by a broken line, so that the lead 7 is formed on each bump electrode 6 of the semiconductor chip 4. A structure connected to is obtained.

Next, as shown in FIG. 7, the semiconductor chip 4 is housed in the through hole 3 of the base substrate 2 with its surface 4A inverted downward, and the other end of the lead 7 is attached to the base substrate 2.
To the conductive pattern formed on the back surface 2B of the.

Subsequently, as shown in FIG. 8, the base substrate 2 to which the semiconductor chip 4 is connected is set between the upper mold 19 and the lower mold 20 of the transfer-molded device, and the gate 21 is set.
Molding is performed by supplying a resin such as an epoxy resin as indicated by the arrow. As a result, as shown in FIG. 9, the front surface 2A of the base substrate 2 and the back surface 2B except for the positions where the balls 5 are to be formed are both covered with the resin body 8.
The resin body 8 is completely filled in the through hole 3 to seal the semiconductor chip 4 and the leads 7.

Next, as shown in FIG. 9, a plurality of balls 5 are formed on the back surface 2A of the base substrate 2 in a grid pattern. As a result, the plurality of bump electrodes 6 formed on the surface 4A of the semiconductor chip 4 are electrically drawn out to the balls 5 of the base substrate 2 through the leads 7.

The method of forming the balls 5 is, for example, that the base substrate 2 is turned upside down, and the balls 5 made of a predetermined conductive material such as solder are provided at predetermined positions of the conductive pattern on the back surface 2B.
Install and arrange. This arrangement of the balls 5 can be easily positioned by processing a slight recess in the portion to which the balls 5 are connected. Subsequently, heat treatment is performed to melt the balls 5 such as solder to fix the balls 5 to the conductive pattern.

As the balls 5, those having a uniform sphere diameter are used in advance. For example, the solder (Pb-Sn alloy) and other conductive materials such as Sn, Au and Ag are used.
The ball 5 can be selected to have an arbitrary sphere diameter and material according to the purpose of use. As described above, the semiconductor device 1 having the BGA structure package as shown in FIGS. 1 and 2 is completed.

According to the first embodiment, the following effects can be obtained.

(1) Since both the front surface 2A and the back surface 2B of the base substrate 2 are covered with the resin body 8, both surfaces of the base substrate 2 can be covered with good balance.
Unnecessary force is not applied to the base substrate 2 when the resin body 8 cures and shrinks. Therefore, it is possible to prevent the warp of the base substrate 2.

(2) Since no adhesive is used to fix the semiconductor chip 4, it is not affected by moisture at the time of mounting, so that reflow cracks can be prevented from occurring.

(3) Since the size of the through hole 3 provided in the base substrate 2 can be set to a size capable of accommodating semiconductor chips 4 of various sizes, the base substrate 2 can be shared.

(Embodiment 2) FIG. 10 is a sectional view showing a semiconductor device according to Embodiment 2 of the present invention, and particularly shows an example applied to a package having a low thermal resistance type BGA structure.

The semiconductor device 1 of the present embodiment has the same structure as that of the first embodiment, but the back surface 4B of the semiconductor chip 4 is made of, for example, Cu, Al, Fe by an adhesive 22 such as Ag paste.
A heat spreader 23 made of a metal material having excellent heat dissipation such as a system alloy is attached so as to cover a part of the surface 2A of the base substrate 2. The periphery of the heat spreader 23 on the surface 2A of the base substrate 2 is covered with the resin body 8. The thickness of the heat spreader 23 is set so as not to be too heavy, and as an example, 0.5 to
A 1.5 mm one is used.

FIG. 11 shows an example of the shape of the heat spreader 23. The heat spreader 23 is formed in a rectangular shape so as to completely cover the through hole 3 of the base substrate 2, and the side surface thereof has grooves 24 for allowing the resin to wrap around. Is provided. This groove 24
Due to the presence of the resin, the resin smoothly flows into the through hole 3 in the resin molding process after the heat spreader 23 is attached.

The second embodiment also has the same structure as that of the first embodiment except that the heat spreader 23 is attached to the back surface 4B of the semiconductor chip 4.
The same effect as that of the first embodiment can be obtained.

In addition to this, by providing the heat spreader 23, the heat generated in the semiconductor chip 4 is transferred to the back surface 4
Since heat can be efficiently radiated from B, it is possible to obtain the effect of realizing a package with low thermal resistance.

FIG. 12 shows a modification of the second embodiment.
It shows an example in which the heat spreader 23 attached to the back surface 4B of the semiconductor chip 4 is set to have an area of a size that completely covers the front surface 2A of the base substrate 2.

According to this modification, the heat spreader 2
Since the area of 3 is set large, the heat dissipation efficiency can be further improved.

In the structure of this modification, since the through hole 3 of the base substrate 2 is filled with resin, even if only the back surface 2B of the base substrate 2 is covered with the resin body 8, the base substrate 2 can be covered.
Since an unreasonable force is not applied, it is possible to obtain the same effect as that of the first embodiment.

(Embodiment 3) FIG. 13 is a sectional view showing a semiconductor device according to Embodiment 3 of the present invention, and shows an example applied to a package of a low thermal resistance type BGA structure, as in Embodiment 2.

In the semiconductor device 1 of this embodiment, the semiconductor chip 4 is housed in the through hole 3 of the base substrate 2 so that the surface 4A faces upward, and the other end of the lead 7 connected to the bump electrode 6 is provided. The end is connected to the conductive pattern formed on the surface 2A of the base substrate 2. The conductive pattern is electrically connected to the ball 5 on the opposite surface 2B via the through-hole wiring (not shown) of the base substrate 2. On the other hand, a heat spreader 23 is attached to the back surface 4B of the semiconductor chip 4 with an adhesive 22.

FIG. 14 shows a mounting example of the semiconductor device 1 according to the third embodiment. As the mounting substrate 10, a structure in which a metal plate 25 is partially embedded is used, and the back surface 4B of the semiconductor chip 4 is used. Mounted on the heat spreader 23
Are mounted on the metal plate 25 with an adhesive 22. As the metal plate 25, the same material as the heat spreader 23 can be used. On the other hand, the ball 5 is connected to the corresponding conductive portion 11 of the mounting substrate 10. The surface 2A of the base substrate 2 is covered with the resin body 8.

Since the heat spreader 23 is also provided in the third embodiment, the heat generated in the semiconductor chip 4 can be efficiently dissipated from the back surface 4B as in the second embodiment, so that the low thermal resistance is obtained. The effect that the package of can be realized can be obtained.

Further, according to the third embodiment, in particular, FIG.
By adopting the mounting structure as shown in (3), the heat from the heat spreader 23 can be further conducted to the metal plate 25, so that the effect of further improving the heat radiation efficiency can be obtained.

Further, since the through hole 3 of the base substrate 2 is filled with the resin, even if only the surface 2A of the base substrate 2 is covered with the resin body 8, an unreasonable force is not applied to the base substrate 2. The same effect as in Example 1 can be obtained.

[0054] (Embodiment 4) FIG. 15 is a sectional view showing a semiconductor device according to Embodiment 4 of the present invention, QTP (Q UAD T
ape Carrier P ackage) a shows an example of application to a package of the BGA structure formed by bonding the base substrate 2.

The semiconductor device 1 of this embodiment is the insulating tape 1
One end of the lead 7 supported by 2 is connected to the bump electrode 6 by collective bonding, and the surface 4A and the side surface of the semiconductor chip 4 including this connection position are covered with the resin layer 27 applied by the potting method to form the QTP 28. Has been done. The QTP 28 is housed in the through hole 3 of the base substrate 2 so that the semiconductor chip 4 faces upward, and the other end of the lead 7 becomes a conductive pattern formed on the surface 2A of the base substrate 2. It is connected. The conductive pattern is electrically connected to the ball 5 on the opposite surface 2B via the through-hole wiring (not shown) of the base substrate 2.

As an example, the resin layer 27 has a thickness of 100 to
It is applied to 200 μm. The insulating tape 12 acts as a dam when the resin is applied.

Next, with reference to FIGS. 16 to 18, a method of manufacturing the semiconductor device 1 of this embodiment will be described in the order of steps.

First, as shown in FIG. 16, one end of the lead 7 is connected to the bump electrode 6 on the surface 4A of the semiconductor chip 4 by batch bonding using a TAB tape, and then the surface of the semiconductor chip 4 including this connection position. 4A and the side surface are coated with a resin by the potting method to cover the resin layer 27 and form the QTP 28.

Next, as shown in FIG. 17, after cutting the lead 7 to a predetermined length, the semiconductor chip 4 is housed in the through hole 3 of the base substrate 2 with its surface 4A facing upward, The other end of the lead 7 is connected to the conductive pattern formed on the surface 2A of the base substrate 2.

Subsequently, as shown in FIG. 18, a plurality of balls 5 are formed in a grid pattern on the back surface 2B of the base substrate 2. The ball 5 is formed by a method similar to the method shown in FIG. As a result, the bump electrodes 6 formed on the front surface 4A of the semiconductor chip 4 are connected to the leads 7
It is electrically drawn to the ball 5 of the base substrate 2 through.

As described above, the BG as shown in FIG.
The semiconductor device 1 having the A structure package is completed.

According to the fourth embodiment, since the front surface 2A and the back surface 2B of the base substrate 2 are not covered with the resin body 8, an unreasonable force is not applied to the base substrate 2 and thus the base substrate 2 is not applied. It is possible to prevent the warp of 2. Further, not only the adhesive is not used for fixing the semiconductor chip 4, but also the base substrate 2 having the through hole 3 having a size capable of accommodating the semiconductor chips 4 of various sizes is used. It is possible to obtain various effects.

Furthermore, since the semiconductor chip 4 is covered with the resin layer 27 formed by potting, it is not necessary to use a transfer molding device, so that the steps can be omitted and the cost can be reduced. .

(Fifth Embodiment) FIG. 19 is a sectional view showing a semiconductor device according to a fifth embodiment of the present invention.
An example is shown in which a TP is bonded to the base substrate 2 to be applied to a BGA structure package.

In the semiconductor device 1 of this embodiment, the semiconductor chip 4 is housed in the through hole 3 of the base substrate 2 with its front surface 4A facing downward, and the other end of the lead 7 connected to the bump electrode 6 at one end. The end is bent and inserted into the through hole 3 to be connected to a conductive pattern formed on the surface 2A opposite to the base substrate 2. This conductive pattern is formed on the back surface 2 through the through-hole wiring (not shown) of the base substrate 2.
It is conducted to the ball 5 of B.

According to the fifth embodiment, the fourth embodiment is also possible.
Similarly, since the front surface 2A and the back surface 2B of the base substrate 2 are not covered with the resin body 8 and the other structures are the same, the same effect as that of the first embodiment can be obtained.

Further, since the back surface 4B of the semiconductor chip 4 is arranged so as to face the side opposite to the mounting surface, the effect that the heat generated in the semiconductor chip 4 can be efficiently radiated from the back surface 4B is obtained, and the low thermal resistance is obtained. The package of can be realized.

(Embodiment 6) FIG. 20 is a sectional view showing a semiconductor device according to Embodiment 6 of the present invention.
An example is shown in which a TP is bonded to the base substrate 2 to be applied to a BGA structure package.

The semiconductor device 1 of this embodiment has the same structure as that of the fourth embodiment except that the adhesive 22 is applied to the back surface 4B of the semiconductor chip 4.
A heat spreader 23 made of a metal material having excellent heat dissipation is attached so as to cover a part of the back surface 2B of the base substrate 2.

The semiconductor device 1 of this embodiment can be mounted on the same mounting substrate 10 as the structure shown in FIG.

According to the sixth embodiment as well, the first embodiment
The same effect as can be obtained.

Furthermore, since the heat from the heat spreader 23 can be further conducted to the metal plate 25, the effect of further improving the heat radiation efficiency can be obtained.

As described above, the invention made by the present inventor is
Although the present invention has been specifically described based on the above-mentioned embodiments, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various modifications can be made without departing from the scope of the invention.

For example, the number of through holes provided in the base substrate for housing the semiconductor chip is not limited to one, but a plurality of through holes may be provided. In this case, the plurality of semiconductor chips need not necessarily be aligned in one direction.

The size, thickness and material of the base substrate can be arbitrarily changed according to the purpose and application. The same applies to the heat spreader.

Further, although the lead arranged between the semiconductor chip and the base substrate has been described as an example using the TAB tape, the lead is not limited to this, and any conductor may be used.

In the above description, the case where the invention made by the present inventor is mainly applied to the manufacturing technology of the semiconductor device which is the field of application which is the background has been described, but the invention is not limited thereto. The present invention can be applied at least under the condition that the bump electrode of the semiconductor chip is electrically drawn out to the conductive portion of the base substrate through the intermediate conductor.

[0078]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

(1) Since the front surface and the back surface of the base substrate are both covered with the resin or not covered with them, an unreasonable force is not applied to the base substrate, so that the warp of the base substrate can be prevented. Becomes

(2) Since no adhesive is used to fix the semiconductor chip, it is not affected by moisture during mounting, so that it is possible to prevent the occurrence of reflow cracks.

(3) Since the size of the through hole provided in the base substrate can be set to a size capable of accommodating semiconductor chips of various sizes, the base substrate can be shared.

[Brief description of drawings]

FIG. 1 is a plan view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a rear view of AA of FIG.

FIG. 3 is a cross-sectional view showing a mounting example of the semiconductor device according to the first embodiment.

FIG. 4 is a cross-sectional view showing a step in the semiconductor device fabrication method of the first example.

FIG. 5 is a cross-sectional view showing another step of the method for manufacturing the semiconductor device according to the first embodiment.

FIG. 6 is a cross-sectional view showing another process of the method for manufacturing the semiconductor device according to the first embodiment.

FIG. 7 is a cross-sectional view showing another step of the method for manufacturing the semiconductor device according to the first embodiment.

FIG. 8 is a cross-sectional view showing another step of the method for manufacturing the semiconductor device according to the first embodiment.

FIG. 9 is a cross-sectional view showing another process of the method for manufacturing the semiconductor device according to the first embodiment.

FIG. 10 is a sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 11 is a perspective view showing a heat spreader used in the semiconductor device according to the second embodiment.

FIG. 12 is a sectional view showing a modification of the semiconductor device according to the second embodiment.

FIG. 13 is a sectional view showing a semiconductor device according to a third embodiment of the present invention.

FIG. 14 is a sectional view showing a mounting example of a semiconductor device according to a third embodiment.

FIG. 15 is a sectional view showing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 16 is a cross-sectional view showing a step in the semiconductor device fabrication method of the fourth example.

FIG. 17 is a sectional view showing another step of the method for manufacturing the semiconductor device according to the fourth embodiment.

FIG. 18 is a cross-sectional view showing another step of the method for manufacturing the semiconductor device according to the fourth embodiment.

FIG. 19 is a sectional view showing a semiconductor device according to a fifth embodiment of the present invention.

FIG. 20 is a sectional view showing a semiconductor device according to a sixth embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Base substrate, 3 ... Through hole, 4 ... Semiconductor chip, 5 ... Ball-shaped conductor, 6 ... Bump electrode, 7
... Leads, 8 ... Resin body, 10 ... Mounting board, 11 ... Conductive part of mounting board, 12 ... Insulating tape, 13 ... Lead member, 1
5 ... Support base, 16 ... Bonding tool, 19 ... Upper mold,
20 ... lower mold, 21 ... gate, 22 ... adhesive, 23 ... heat spreader, 24 ... groove, 25 ... metal plate, 27 ... resin layer, 28 ... QTP (Q uad T ape Carrie
r P package).

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Masahiro Ichitani, Masahiro Ichitani 5-201-1, Kamimizuhoncho, Kodaira-shi, Tokyo Inside the Semiconductor Business Division, Hitachi, Ltd. (72) Inventor Hideki Tanaka, Kamimizumoto-cho, Kodaira-shi, Tokyo 5-20-1 Hitachi Ltd. Semiconductor Division

Claims (9)

[Claims] 1. A semiconductor device in which a plurality of bump electrodes formed on a surface of a semiconductor chip are electrically drawn out to a conductive portion of a base substrate through an intermediate conductor, wherein a through hole is formed in the base substrate. A semiconductor device, wherein the semiconductor chip is housed in the through hole, and the intermediate conductor is arranged between the base substrate and the semiconductor chip. 2. The semiconductor device according to claim 1, wherein the thickness of the base substrate is larger than the thickness of the semiconductor chip. 3. The semiconductor device according to claim 1, wherein a front surface and a back surface of the base substrate are covered with a resin that seals the semiconductor chip. 4. The semiconductor device according to claim 1, wherein at least a connection portion between the intermediate conductor and the semiconductor chip is covered with a resin. 5. The semiconductor device according to claim 1, wherein the conductive portion of the base substrate comprises a plurality of ball-shaped conductors arranged on the back surface of the base substrate. 6. The one end of the intermediate conductor, one end of which is connected to a bump electrode of the semiconductor chip, is connected to the surface of the base substrate on which the conductive portion is formed. 5. The semiconductor device according to any one of 5 above. 7. The other end of the intermediate conductor, one end of which is connected to a bump electrode of the semiconductor chip, is connected to a surface of the base substrate opposite to a surface on which a conductive portion is formed. The semiconductor device according to claim 1. 8. The heat spreader is attached to the back surface of the semiconductor chip.
The semiconductor device according to claim 1. 9. The semiconductor device according to claim 1, wherein the intermediate conductor comprises a conductive foil supported by an insulating tape.