JPH08320461A - Production of liquid crystal display device - Google Patents

Abstract

PURPOSE: To improve the reliability of an active matrix type liquid crystal display device in which a pixel region and a peripheral driving circuit region is integrated and to improve its productivity. CONSTITUTION: An integrated circuit 103 comprising thin film transistors is disposed in the inside (liquid crystal side) of a sealing material 102 so that the peripheral driving circuit is protected from the outside. Thereby, the reliability of the peripheral driving circuit for a long time can be improved. By forming this structure in one panel and dividing it into plural numbers by the sealing material 101, plural liquid crystal panels are formed at one time.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for improving productivity of an active matrix type liquid crystal display device.

[0002]

2. Description of the Related Art FIG. 4 is a sectional view of a panel constituting a conventional active matrix type liquid crystal display device. FIG.
As is clear from the figure, since the pixel region 404 is surrounded by the sealing material 402 (also referred to as a sealing material), only the pixel region 404 of the active matrix liquid crystal display device is in contact with the liquid crystal and the peripheral drive circuit region 403 is The thin film transistor is in contact with the atmosphere. This is a remnant when only the pixel thin film transistor existed on the substrate of the active matrix type liquid crystal display device before and the drive circuit was an external IC.

[0003]

As described above, according to the conventional technique, the pixel region 404 and the peripheral drive circuit region 403 are provided.
When and are formed on the same glass substrate 401, the mounting position of the drive circuit is not optimized.

Therefore, in the conventional active matrix type liquid crystal display device, since the driving circuit thin film transistor is exposed to the outside, it is necessary to be very careful in handling the substrate of the active matrix type liquid crystal display device during the panel assembling process. Met. Under such circumstances, a form of an active matrix type liquid crystal display device that is easy to handle in the manufacturing process has been desired. Also, from the viewpoint of reliability, the pixel is protected by a liquid crystal material, a sealing material, etc., whereas the drive circuit is only covered with a thin oxide film, which is resistant to temperature and contamination. It's getting weaker.

[0005]

In order to solve the above problems, one of the inventions disclosed in the present specification is to provide an active matrix type liquid crystal display device with a pixel thin film transistor of the active matrix type liquid crystal display device. The driving circuit thin film transistor of the pixel is present on the same substrate, and liquid crystal is sealed so that both the pixel thin film transistor and the driving circuit thin film transistor are in contact with the liquid crystal material directly or through the thin film.

Generally, since the thin film transistor is covered with an interlayer insulating film made of a silicon oxide film or the like, it comes into contact with the liquid crystal through this insulating film. By adopting the above configuration, the thin film transistor of the peripheral drive circuit can be substantially enclosed in the liquid crystal. That is, the thin film transistor of the peripheral driver circuit can be sealed with liquid crystal.

According to another aspect of the invention, a thin film transistor circuit arranged in a matrix on a first substrate having a light-transmitting property, and a peripheral drive circuit formed of thin film transistors connected to the matrix circuit. A step of forming a plurality of sets of liquid crystal panel regions having the same, and a step of dividing the liquid crystal panel region into a plurality of parts by a sealing material and bonding the second substrate having a light-transmitting property and the first substrate at a predetermined interval Injecting liquid crystal between the first substrate and the second substrate, liquid crystal is present on an upper surface of the peripheral drive circuit, and the peripheral portion is provided between the pair of substrates. A void is formed for arranging an integrated circuit connected to the driving circuit.

FIG. 2 shows an example of a specific configuration obtained by using the above configuration. FIG. 2 is a sectional view showing a schematic configuration of an active matrix type liquid crystal display device in which a liquid crystal 209 is sandwiched between a pair of glass substrates 202. In the configuration shown in FIG. 2, a thin film transistor 207 of an active matrix circuit, a thin film transistor 208 of a peripheral drive circuit for driving the thin film transistor 207, and an integrated circuit for sending a video signal and various control signals to the thin film transistor 208 of the peripheral drive circuit. (IC) 211.

In the structure shown in FIG. 2, liquid crystal is present on the upper surface of the thin film transistor 208 of the peripheral drive circuit. In addition, the integrated circuit 211 sealed with the sealing material 210
Are arranged in a space formed between the pair of glass substrates 202.

Further, FIG. 1 shows an example of positioning when forming a plurality of liquid crystal panels using a pair of glass substrates. In the configuration shown in FIG. 1, the sealing material 101
According to the liquid crystal panel, each liquid crystal panel is divided. FIG.
The sealing material 101 in FIG. 2 corresponds to the sealing material 210 in FIG.

According to another aspect of the invention, in the active matrix type liquid crystal display device, the pixel thin film transistor of the active matrix type liquid crystal display device and the driving circuit thin film transistor of the pixel are present on the same substrate, and the driving circuit thin film transistor is sealed. It is characterized by being enclosed with a stopper.

A concrete example of the above configuration is shown in FIG. FIG.
In the configuration shown in (1), the thin film transistor 308 forming the peripheral drive circuit is sealed with the sealing material 310.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION To minimize the damage during the panel assembly process of the drive circuit of the active matrix type liquid crystal display device of the present invention and solve the reliability problem,
The drive circuit of the active matrix type liquid crystal display device may be in a form that cannot be directly touched. Therefore, FIG.
As shown in, the peripheral drive circuit region 103 of the active matrix type liquid crystal display device is mounted in a liquid crystal material or a sealing material.

The structure shown in FIG. 1 shows an example in which substrates for four panels are formed on one glass substrate 101. The substrate shown in FIG. 1 has a configuration in which the peripheral drive circuit 103 and the pixel region 104 are integrated on the same glass substrate. The pixel region 104 has a structure in which at least one thin film transistor is connected to pixel electrodes arranged in a matrix.

In the figure, a glass substrate 10 on which each circuit is formed
Although only 1 is shown, the glass substrate is actually arranged facing it. Opposite electrodes are arranged on the glass substrate (not shown) which faces each other.

Further, in the structure shown in FIG. 1, in order to manufacture a plurality of active matrix type liquid crystal display panels from a pair of glass substrates, the active matrix type liquid crystal display device is divided by the encapsulating material 102 and multi-chamfered. Has been realized. By doing so, improvement in productivity and improvement in reliability can be realized at the same time.

Although the sealing material 102 has the same width in FIG. 1, it is preferable to widen the sealing material 102 in order to provide a cutting margin in a region where the glass substrate 102 is cut. For example, as shown in FIG.
In the above, the width of the cross-shaped region that divides the liquid crystal display device may be about twice the width of the region that borders the glass substrate 102. Note that, in FIG. 8, the same reference numerals as those in FIG. 1 denote the same members.

According to the present invention, the peripheral driving circuit region is substantially located in the liquid crystal material or the sealing material by allowing the peripheral driving circuit region to exist in the region where the liquid crystal exists or in the sealing material. It can be in a sealed state. Then, it is possible to prevent moisture from entering from the outside into the peripheral drive circuit region having a high packaging density. Further, when a plurality of liquid crystal panels are positioned using one glass substrate, a plurality of liquid crystal display panels can be simultaneously formed with high reliability by partitioning each panel substrate with a sealing material. can do.

[0019]

【Example】

Example 1 A sectional view of an active matrix liquid crystal display device according to the present invention is shown in FIG. In the active matrix type liquid crystal display device, the glass substrate 200 includes a transparent electrode 204 on the pixel thin film transistor 207.
And an alignment film 205 is attached. The glass substrate 202 in this state is called a thin film transistor substrate. In the thin film transistor substrate, the polarizing plate 201 and the glass substrate 200 are arranged in this order from the side distant from the liquid crystal material 209.

The other glass substrate 202 is called a color filter substrate. Alignment film 20 from the side closer to liquid crystal material 209
5, the transparent electrode 204, the color filter 203, the glass substrate 202, and the polarizing plate 201. In order to keep the distance between these two glass substrates 200 and 202 constant,
A large number of glass or resin spacers 206 are dispersed in the liquid crystal material 209.

The polarizing plate 201 is for limiting the vibration direction of light passing therethrough, and is a filter having a thickness of about 80 to 210 μm. As shown in FIG. 6, the structure of the polarizing plate 201 has a polarizing film 604 made of PVA (polyvinyl alcohol) in the center and a cellulose-based protective layer 60.
3 is attached. Further, an adhesive layer 602 and a release film 601 are attached on the outer side of the layer near the liquid crystal material, and a protective film 605 for protecting the surface is attached on the opposite side. At the time of use, the release film 601 is peeled off and the adhesive layer 602 is attached to the glass substrate for use.

The alignment film 205 is for aligning the liquid crystal molecules in a certain direction, and when the voltage is OFF, the liquid crystal molecules enter the grooves formed in the alignment film 205 and are aligned in the certain direction. As the alignment film material, polyimide or polyamic acid dissolved in a solvent in an amount of 5 to 10% by weight is used. The orientation film 205 is required to have a uniform thickness with a thickness of about 0.05 to 0.1 μm.

The liquid crystal material 209 is located in the center of the active matrix type liquid crystal display device and stands up when the voltage is ON and twists when the voltage is OFF, thereby playing a role of a switch for controlling passage / blocking of light. . The raw material of the liquid crystal material 209 is benzene, toluene or the like.

The color filter 203 is a color synthesizing filter for colorizing a monochrome liquid crystal display. The color filter 203 consists of three colors of RGB (Red, Green, Blue), and one pixel thin film transistor and one color of the color filter 203 overlap each other.

The encapsulant 210 plays the role of an adhesive for attaching the two glass substrates. Raw materials for the encapsulant 210 include silicon, acrylic, epoxy, and the like.

Although the pixel thin film transistor is in the liquid crystal region, which is similar to the conventional active matrix type liquid crystal display device, in the present invention, the drive circuit thin film transistor 208, which is conventionally outside the enclosure, is arranged in the liquid crystal enclosure region. ing. The inclusion of the drive circuit in the liquid crystal encapsulation region has the following advantages. 1. Improved stain resistance. 2. Image quality is improved by shortening the signal lines connected to the pixels.

Further, in this embodiment, not only the drive circuit is placed in the liquid crystal enclosing region, but also the control integrated circuit such as the microprocessor 211 for controlling the drive circuit is put in the encapsulating material so that the drive circuit and the control circuit are controlled. It is possible to obtain effects such as reducing the distance to the integrated circuit and reducing unnecessary signal noise.

When enclosing the control integrated circuit,
It is also attempted to facilitate mounting by partially reducing the thickness of the opposite substrate. By placing the control integrated circuit in the sealing region, the reliability is improved as compared with the conventional structure. The control circuit referred to here is an integrated circuit formed using a silicon edge crystal wafer, and specific examples thereof include a memory, an I / O port, various other control circuits, a circuit that handles video signals, and Mention may be made of integrated circuits having any combination thereof. Of course, these integrated circuits are arranged in the required number.

Further, the method for arranging the integrated circuit is as follows.
It is desirable to be mounted on the board with On Glass). However, even if the wiring is formed by the wire bonding method, the wiring is substantially sealed by the sealing material, so that the reliability can be high.

Although not shown in the drawing, it is necessary to form a light shielding film such as a chromium film or an aluminum film on the upper surface of the peripheral drive circuit region.

In the structure shown in FIG. 2, a part of the glass substrate 202 on the color filter substrate side is thinned, and the integrated circuit 211 is arranged in that part. This is because the gap into which the liquid crystal is injected is about several μm, while the thickness of the integrated circuit 211 is about several hundred μm. Figure 2
In the above, the glass substrate 2 on the color filter substrate side above
Although a part of the glass substrate 202 on the thin film transistor substrate side is thin, a part of the glass substrate 202 on the thin film transistor substrate side may be thin. Further, both glass substrates 202 are thinned, and the integrated circuit 2 is
11 may be arranged.

A manufacturing process for obtaining the active matrix circuit of this embodiment will be described with reference to FIGS. The left side of the drawing shows a manufacturing process of a thin film transistor of a peripheral drive circuit, and the right side thereof shows a manufacturing process of a thin film transistor of an active matrix circuit. First, as a base oxide film 502, a thickness of 1000 to 1000 is formed on a quartz substrate or a glass substrate 501.
A 3000 Å silicon oxide film is formed. As a method of forming this silicon oxide film, a sputtering method in an oxygen atmosphere or a plasma CVD method may be used.

Next, an amorphous or polycrystalline silicon film is formed by plasma CVD method or LPCVD method.
0 to 1500Å, preferably 500 to 1000Å is formed. And 500 degreeC or more, Preferably it is 800-95.
Thermal annealing is performed at a temperature of 0 ° C. to crystallize the silicon film. After crystallizing by thermal annealing, optical annealing may be performed to further enhance the crystallinity. In addition, when crystallizing by thermal annealing, Japanese Patent Laid-Open No. 6-244
103, 6-244104,
An element (catalyst element) that promotes crystallization of silicon such as nickel may be added.

Next, the silicon film is etched to form the active layers 503, 50 of the thin film transistors of the island-shaped peripheral drive circuit.
4 and the active layer 505 of the thin film transistor (pixel thin film transistor) of the matrix circuit. Active layer 503
Represents a P-channel type thin film transistor, and the active layer 504 constitutes an N-channel type thin film transistor.

Further, a gate insulating film 506 of silicon oxide having a thickness of 500 to 2000 Å is formed by a sputtering method in an oxygen atmosphere. A plasma CVD method may be used as a method of forming the gate insulating film 506. Plasma CV
When the silicon oxide film is formed by the D method, the raw material gas is nitrous oxide (N ₂ O) or oxygen (O ₂ ).
And monsilane (SiH ₄ ) are preferably used.

After that, a polycrystalline silicon film (containing a small amount of phosphorus for enhancing conductivity) having a thickness of 2000 Å to 5 μm, preferably 2000 to 6000 Å is formed on the entire surface of the substrate by the LPCVD method. Then, this is etched to form gate electrodes 507, 508, and 509.
(Figure 5 (A))

Then, by ion doping, phosphine (PH ₃ ) is used as a doping gas in a self-aligning manner on all of the island-like active layers 503, 504 and 505 using the gate electrodes 507, 508 and 509 as a mask. inject. The dose amount is 1 × 10 ^{12 to} 5 × 10 ¹³ atoms / cm ² . As a result, weak N-type regions 510, 51
1, 512 are formed. (Fig. 5 (B))

Next, in the photoresist mask 513 covering the active layer 503 of the P-channel type thin film transistor, and in the active layer 505 of the pixel thin film transistor, 3 μm from the end of the gate electrode 509 parallel to the gate electrode 509.
A photoresist mask 514 is formed to cover the distant portion. Then, again by the ion doping method, phosphorus is injected into the active layers 504 and 505 using phosphine as a doping gas. Dose amount is 1 × 10 ^{14 to} 5 ×
It is set to 10 ¹⁵ atoms / cm ² . As a result, strong N-type regions (source / drain) 515 and 516 are formed. Weak N-type region 51 of active layer 505 of pixel thin film transistor
Of the two, the region 517 covered with the mask 514 remains weak N-type because phosphorus is not implanted in this doping. (Fig. 5 (C))

Next, the active layers 504 and 505 of the N-channel type thin film transistor are covered with a photoresist mask 518, and diborane (B ₂ H ₆ ) is used as a doping gas.
Boron is implanted into the active layer 503 by the ion doping method. The dose amount is 5 × 10 ¹⁴ to 8 × 10 ¹⁵ atoms / cm ^2.
And In this doping, the dose of boron is as shown in FIG.
Since the dose of phosphorus in (C) is exceeded, the weak N-type region 510 previously formed is inverted to the strong P-type region 519. By the above doping, strong N-type regions (source / drain) 515 and 516, a strong P-type region (source / drain) 519, and a weak N-type region (low concentration impurity region) 517 are formed. In this embodiment, the width x of the low concentration impurity region 517 is about 3 μm. (Fig. 5
(D))

Thereafter, thermal annealing is performed at 450 to 850 ° C. for 0.5 to 3 hours to recover the damage due to the doping, activate the doping impurities, and recover the crystallinity of silicon. After that, a silicon oxide film having a thickness of 3000 to 6000 Å is formed as an interlayer insulator 520 on the entire surface by a plasma CVD method. Interlayer insulator 520
May be a silicon nitride film or a multilayer film of a silicon oxide film and a silicon nitride film. Then, the interlayer insulator 520 is etched by a wet etching method to form contact holes in the source / drain.

Then, a thickness of 200 is obtained by the sputtering method.
A titanium film of 0 to 6000 Å is formed, and this is etched to form electrodes / wirings 521, 522, 523 of peripheral circuits,
And electrodes / wirings 524 and 52 of the pixel thin film transistor
5 is formed. Further, a silicon nitride film 526 having a thickness of 1000 to 3000 Å is formed as a passivation film by plasma CVD method, and this is etched to form a contact hole reaching the electrode 525 of the pixel thin film transistor. Finally, the thickness 50 formed by the sputtering method
An ITO (indium tin oxide) film of 0 to 1500 Å is etched to form a pixel electrode 527. In this way, the peripheral logic circuit and the active matrix circuit are integrally formed. (Fig. 5 (E))

The process of assembling the active matrix type liquid crystal display device of this embodiment will be described below. First, the thin film transistor substrate and the color filter substrate are thoroughly washed with various chemicals such as the etching solution resist stripping solution used for the surface treatment.

Next, the alignment film is attached to the color filter substrate and the thin film transistor substrate. The alignment film has certain grooves formed therein, and liquid crystal molecules are uniformly arranged along the grooves.
As the material of the alignment film, a solvent such as butyl cellulose or n-methylpyrrolidone in which about 10% by weight of the solvent is dissolved is used. This is called a polyimide varnish. The polyimide varnish is printed by a flexographic printing device.

Then, the alignment films attached to both the thin film transistor substrate and the color filter substrate are heated and cured. This is called baking. Maximum baking temperature is about 30
The polyimide varnish is baked and cured by sending hot air at 0 ° C. to heat it. Then, a rubbing process is performed in which the glass substrate surface to which the alignment film is attached is rubbed in a certain direction with a buff cloth (fibers such as rayon and nylon) having a length of 2 to 3 mm to form fine grooves.

Then, spherical spacers of polymer type, glass type, silica type or the like are dispersed on either the thin film transistor substrate or the color filter substrate. Spacer spraying methods include a wet method in which spacers are mixed with a solvent such as pure water or alcohol and sprayed on a glass substrate, and a dry method in which spacers are sprayed without using any solvent.

Next, a sealing material is applied to the outer frame of the thin film transistor substrate. The application of the sealing material has the role of adhering the thin film transistor substrate and the color filter substrate and the purpose of preventing the injected liquid crystal material from flowing out. As a material for the encapsulating material, an epoxy resin and a phenol curing agent dissolved in a solvent of ethyl cellosolve are used. After the sealing material is applied, the two glass substrates are bonded together. The method is about 16
A heat curing method is employed in which the encapsulant is cured in about 3 hours by a high temperature press at 0 ° C.

Then, a panel-sized groove is formed on the glass substrate by using a scriber, and a urethane round material is dropped from directly above the groove of the substrate by using an air cylinder pressure by using a breaker, so that the thin film transistor substrate is panelized. Divided into sizes to enable multiple cutting.

Finally, a liquid crystal material is put in from a liquid crystal injection port of an active matrix type liquid crystal display device in which a thin film transistor substrate and a color filter substrate are bonded, and after the liquid crystal material is injected, the liquid crystal injection port is sealed with an epoxy resin. As described above, the active matrix type liquid crystal display device is assembled.

Example 2 A sectional view of an active matrix type liquid crystal display device according to the present invention is shown in FIG. As is clear from the figure, by encapsulating the microprocessor 311 for controlling the active matrix type liquid crystal display device and the drive circuit thin film transistor 308 with the encapsulating material 310, the drive circuit thin film transistor 308 is protected,
I try not to expose it to the outside. This example has the same configuration and manufacturing process as that of Example 1 except that the amount of circuit (driving circuit thin film transistor 308) encapsulated by the sealing material 310 is different.

[Embodiment 3] This embodiment relates to a configuration in which a spare peripheral circuit (redundant circuit) is provided. FIG. 7 shows a schematic top view of the liquid crystal display panel shown in this embodiment. Since FIG. 7 is a view seen from above, as the glass substrate 701,
Only one is shown. However, in reality, the glass substrate 7
The other glass substrate, paired with 01, is the glass substrate 7.
It is stuck on 01. On the glass substrate 701, the peripheral drive circuit region 703 and the pixel regions 704 arranged in a matrix are arranged inside the sealing material 702. Since the inside of the sealing material 702 is filled with the liquid crystal, the thin film transistors arranged in the peripheral drive circuit region 703 and the pixel region 704 are in a state where the liquid crystal exists on the upper surface thereof.

Further, integrated circuits (ICs) constituting various control circuits connected to the peripheral drive circuit are arranged in the sealing material 702 and are just molded by the sealing material 702.

Reference numeral 705 denotes a spare peripheral drive circuit area, which is used when a defect occurs in the peripheral drive circuit arranged in the area 703. 706
Reference numeral denotes a connection terminal to the outside, through which a video signal and a necessary signal are input from the rotating section. The liquid crystal display panel shown in FIG. 7 contains all necessary circuits between a pair of glass substrates. Moreover, since all of these circuits are sealed with the sealing material or the liquid crystal, the reliability can be made extremely high.

Although the dimensional ratio is not accurate in the drawing, the width of the peripheral drive circuit is about several millimeters. Although the width of the sealing material is determined by the integrated circuit connected to the peripheral driving circuit, the width is about several mm or less (if the integrated circuit can be made small, it can be about 1 mm).
Can be Therefore, it has an extremely simple appearance that it is composed of a pair of glass substrates in appearance, except that there is an edge of several mm to 1 cm around the area where the liquid crystal display is actually performed and the external output terminals are excluded. can do.

A plurality of sets having the above-described structure are formed by using a pair of large glass substrates, and are divided by a sealing material as shown in FIG. In this way, a plurality of liquid crystal panels can be simultaneously formed.

[0055]

As described above, by disposing the driving circuit thin film transistor of the active matrix type liquid crystal display device inside the encapsulating material region, it is possible to improve the temperature resistance and stain resistance of the driving circuit thin film transistor. . Further, the active matrix type liquid crystal display device can be downsized. Further, the voltage drop due to the shortening of the image signal line can be reduced, and the characteristics can be improved.

Further, a plurality of sets of active matrix display substrates are formed on one glass substrate, and a plurality of liquid crystal panels can be formed at the same time by dividing the substrate into a plurality of sets by a sealing material during panel assembly. it can.

By arranging the peripheral drive circuit area in the liquid crystal area or the area provided with the sealing material, the peripheral drive circuit area is sealed by the liquid crystal or the sealing material, and the reliability due to the influence of moisture is increased. Sexual deterioration can be prevented.

Further, by disposing the control integrated circuit connected to the peripheral drive circuit in the encapsulating material, it is possible to prevent the deterioration of reliability due to the influence of moisture. In addition, since a required circuit can be arranged between the pair of glass substrates, reliability can be improved, and a miniaturized liquid crystal display device having a simple appearance without unnecessary unevenness can be provided. Obtainable.

[Brief description of drawings]

FIG. 1 is a schematic view of an active matrix type liquid crystal display device according to the present invention.

FIG. 2 is a cross-sectional view of an active matrix type liquid crystal display device in Example 1.

FIG. 3 is a cross-sectional view of an active matrix type liquid crystal display device in Example 2.

FIG. 4 is a schematic view of a conventional active matrix type liquid crystal display device.

FIG. 5 is an explanatory diagram of a manufacturing process of the thin film transistor of Example 1.

FIG. 6 is a configuration diagram of a polarizing plate.

FIG. 7 is a schematic view of an active matrix type liquid crystal display device of an example.

FIG. 8 is a schematic view of an active matrix type liquid crystal display device according to the present invention.

[Explanation of symbols]

101, 200, 202, 302, 401 Glass substrate 102, 210, 310, 402 Encapsulating material 103, 208, 308, 403 Driving circuit thin film transistor 104, 207, 307, 404 Pixel thin film transistor 201, 301 Polarizing plate 203, 303 Color filter 204, 304 Transparent electrode 205, 305 Alignment film 206, 306 Spacer 209, 309 Liquid crystal material 211, 311 Microprocessor 501 Substrate 502 Base film (silicon oxide) 503 to 505 Active layer (silicon) 506 Gate insulating film (silicon oxide) 507 -509 Gate electrode / gate line 510-512 Weak N-type region 513, 514 Photoresist mask 515, 516 Strong N-type region (source / drain) 517 Low-concentration impurity region 518 Photoresist mass 519 strong P-type region (source / drain) 520 interlayer insulator (silicon oxide) 521 to 525 metal wires,
Electrode 526 Passivation film (silicon nitride) 527 Pixel electrode (ITO)

Claims (8)

[Claims] 1. A method for simultaneously manufacturing a plurality of active matrix type liquid crystal display devices, wherein the pixel thin film transistor of the active matrix type liquid crystal display device and a driving circuit thin film transistor of the pixel are present on the same substrate, and the pixel thin film transistor and the driving circuit are driven. There are a plurality of the active matrix type liquid crystal display devices in which liquid crystal is sealed so that both of the circuit thin film transistors are in contact with the liquid crystal material directly or through the thin film, and there are a plurality of active matrix type liquid crystal display devices. A method for manufacturing a liquid crystal display device, which is characterized in that a sealing material is used to realize multi-chambering. 2. The method for manufacturing a liquid crystal display device according to claim 1, wherein the drive circuit is provided in a liquid crystal region inside the sealing material. 3. The control circuit for controlling an active matrix type liquid crystal display device according to claim 1, wherein a COG (Chip) is provided.
On glass) is mounted on the substrate, and the control circuit is encapsulated in the encapsulating material of the liquid crystal of the active matrix liquid crystal display device. 4. The pixel thin film transistor of an active matrix type liquid crystal display device and the driving circuit thin film transistor of the pixel are formed on the same substrate according to claim 1, and the driving circuit thin film transistor is sealed by a sealing material. And a method for manufacturing a liquid crystal display device. 5. A control circuit for controlling an active matrix type liquid crystal display device according to claim 3, wherein a COG (Chip) is provided.
A method for manufacturing a liquid crystal display device, characterized in that the thickness of the substrate at the mounting position is made thin on the substrate on which the control circuit is mounted, since it is mounted on the substrate by On Glass. 6. The control circuit for controlling an active matrix type liquid crystal display device according to claim 3, wherein a COG (Chip) is provided.
A method of manufacturing a liquid crystal display device, characterized in that the thickness of the substrate at the mounting position is thinned on the opposite side substrate on which the control circuit is mounted because it is mounted on the substrate by On Glass). 7. The method for manufacturing a liquid crystal display device according to claim 3, wherein the control circuit is an integrated circuit manufactured using a single crystal silicon substrate. 8. A liquid crystal panel region having a thin film transistor circuit arranged in a matrix and a peripheral drive circuit formed of thin film transistors connected to the matrix circuit, on a first substrate having a light-transmitting property. A step of forming a plurality of sets, a step of dividing the liquid crystal panel region into a plurality of pieces with a sealing material, and adhering the light-transmissive second substrate and the first substrate at a predetermined interval; A step of injecting liquid crystal between the substrate and the second substrate, wherein liquid crystal is present on the upper surface of the peripheral drive circuit, and the liquid crystal is present between the pair of substrates and connected to the peripheral drive circuit. A method for manufacturing a liquid crystal display device, characterized in that a space for arranging an integrated circuit is formed.