JPH08318386A - Method and device for machining by energy beam - Google Patents

Abstract

PURPOSE: To provide the method and device that has a high degree of freedom in making patterns and that is capable of freely and precisely machining a curved or slant face of an arbitrary pattern with a simple structure and also to provide an element thus manufactured with excellent performance. CONSTITUTION: The machining method by an energy beam is such that an object 2 to be machined is irradiated, through a shield 4... having a prescribed pattern, by an energy beam emitted from an energy beam source 1, and that projecting and recessing parts are formed on the surface by emitting the energy beam while at least one among the energy beam source 1, shield 4 and object 2 is relatively moved against the others and thereby controlling the beam irradiation time on the surface of the object to be machined.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a surface of a workpiece,
TECHNICAL FIELD The present invention relates to a processing method and a processing apparatus for performing processing using an energy beam, and in particular, an ultrafine processing in which a manufactured workpiece can be applied to a quantum effect element, an optical lens, a friction reducing mechanism, a fluid sealing mechanism, etc. The present invention relates to a suitable processing method and processing apparatus.

[0002]

2. Description of the Related Art Conventionally, in the case of processing using a photolithography technique in a semiconductor process, as shown in FIG. 47, an unprocessed portion is covered with a photoresist mask, and an uncovered portion is exposed to an ultraviolet beam or In the case of the plasma process, energetic ions are irradiated for processing. The working depth is controlled by controlling the working time.

Photoresist manufacturing and processing steps using photolithography used in this step will be further described. First, the substrate 202 to be processed is coated with the resist material 202 (step 1). Next, ultraviolet rays 204 are irradiated through the photomask 203, and the pattern holes 203a formed in the photomask 203 are transferred to the resist material 202 (step 2). Next, by developing this, ultraviolet rays 204 are passed through the pattern holes 203a.
The resist material 202 in the portion irradiated with is removed to expose the surface of the substrate 1 to be processed (step 3).

Next, ions or radicals in the plasma are applied to the exposed surface of the substrate 201 to be processed for anisotropic etching (step 4), and finally the resist material 202 is removed (step 5). Through the above steps, the substrate 20 to be processed
A microfabrication process of forming a hole 201c having the same shape as the pattern hole 203a of the photomask on the surface of No. 1 is performed.
This step is repeated in the process of manufacturing the semiconductor device.

[0005]

In the method of the photoresist pattern forming process using such a conventional photolithography technique, it is possible to perform processing such as forming a simple unevenness, but it is possible to form a curved surface or a sloped surface. In the case of processing, it is necessary to prepare a plurality of patterns, exchange them sequentially and perform irradiation to form curved surfaces in stages, which is time-consuming, and it is difficult to fabricate a minute quantum effect element. It was difficult to process with high precision that could be used.

Further, as described above, a resist pattern is prepared by the steps of resist coating, cleaning, exposure, baking and development on a workpiece, and energy particles are caused to act on the workpiece through this pattern to perform processing. There is also a problem that the manufacturing cost is high because a very complicated and laborious process of removing the resist is required. Moreover, it may be difficult to form a uniform resist film due to the roughness and flatness of the surface.

Further, in the photolithography technique, when the residual photoresist is removed after the processing process,
For example, when ashing is used, the processed surface is damaged, and even if removed by a solution, contamination of the processed surface and deterioration of the processed shape are caused, which has a drawback that the surface is affected.

Further, in the processing using the plasma process, the incident directions of the ions are varied, and since the charges are accumulated in the ultra-fine region, the variation of the incident directions of the charged particles is increased. In areas, the legal processing characteristics are remarkable. For these reasons, the processing bottom surface becomes flat and the processing sidewall has poor verticality. Especially 1
With ultra-fine processing of μm or less, accurate processing becomes difficult.

The present invention has a high degree of freedom in pattern formation,
It is an object of the present invention to provide a method and apparatus capable of freely and accurately processing a curved surface or an inclined surface having an arbitrary pattern with a simple configuration, and further to provide an element having excellent performance manufactured by the method.

[0010]

According to a first aspect of the present invention, an energy beam emitted from an energy beam source is applied to a workpiece through a shield having a predetermined pattern, and the workpiece is irradiated with the energy beam. A method of processing with an energy beam, which comprises irradiating an energy beam while moving at least one of an energy beam source, a shield, and a workpiece with respect to another person, It is a processing method using an energy beam characterized by forming irregularities on the surface by controlling the beam irradiation time.

Since the energy beam is irradiated while moving at least one of the energy beam source, the shield, and the workpiece relative to the other, the beam irradiation time of the workpiece on the surface of the workpiece is controlled. As a result, it is possible to obtain a processing pattern that is not restricted by the pattern of the shielding material, and it is possible to perform processing in which the depth of the unevenness and the protruding height are different depending on the location. In addition, since the shield is a separate body, the pattern itself can be easily processed, fine and complex patterns can be formed, and since it is not attached to the surface of the workpiece, it is not restricted by the surface properties or shape. It is possible to easily perform the process of transferring the pattern shape.

The invention according to claim 2 is the method of processing with an energy beam according to claim 1, characterized in that the relative movement is continuously performed to form the unevenness into a smooth curved surface. By continuously performing the relative movement, not only a simple uneven surface but also a complicated uneven surface having an inclined surface or a curved surface can be processed using a simple process and apparatus.

The invention according to claim 3 is the method for processing with an energy beam according to claim 1 or 2, characterized in that the unevenness is formed along the direction in which the shield moves. The invention according to claim 4 is the method for processing with an energy beam according to claim 3, wherein the moving speed of the shield is controlled in accordance with the inclination of the uneven cross-sectional shape.

For example, when the shield is moved in a certain direction with respect to the workpiece while irradiating the beam, unevenness having an inclination corresponding to the change in the moving speed is formed along the moving direction. Therefore, the complicated shape of the shield 3
It is possible to form dimensional unevenness. By storing such a movement speed pattern in a computer as in a conventional numerical control machine, an accurate and automated machining operation can be performed.

According to a fifth aspect of the present invention, the shield 1
5. The method of processing with an energy beam according to claim 1, wherein the irradiation time is controlled by moving one edge. The invention according to claim 6 is the processing method with an energy beam according to any one of claims 1 to 4, characterized in that the irradiation time is controlled by moving two opposing edges of the shield. The invention according to claim 7 is the processing method with an energy beam according to any one of claims 1 to 6, wherein the movement is a translational movement in a direction intersecting the beam.

The invention according to claim 8 is the processing method with an energy beam according to any one of claims 1 to 6, characterized in that the movement is a rotational movement in a direction intersecting with the beam. The invention according to claim 9 is the method for processing with an energy beam according to any one of claims 1 to 8, characterized in that, in addition to the relative movement, the workpiece is rotated. The invention according to claim 10 is the method for processing with an energy beam according to any one of claims 1 to 9, wherein a fixed shield that defines a maximum range to be processed with the energy beam is used.

An eleventh aspect of the present invention is the energy beam processing method according to any one of the first to tenth aspects, wherein a plurality of the shields are used. The invention according to claim 12 is a method for processing with an energy beam according to any one of claims 1 to 11, characterized in that a predetermined uneven shape is formed on the shield by repeating the processing. is there. Claim 13
The invention according to claim 1 is the method of processing with an energy beam according to any one of claims 1 to 12, wherein the relative movement changes an angle of the energy beam with respect to the workpiece. The invention according to claim 14 is characterized in that the relative movement is performed by rotational movement of at least one of an energy beam source, a shield, and a workpiece. This is a beam processing method.

According to a fifteenth aspect of the present invention, the beam irradiation amount is controlled by utilizing the opening area distribution of the pattern formed on the shield, and the energy according to any one of the first to fourteenth aspects. This is a beam processing method.
According to a sixteenth aspect of the present invention, the energy beam processing method according to the fifteenth aspect is characterized in that the opening area of the pattern of the shield is distributed in the moving direction and the width direction. When the pattern of the shield is made different in the opening area in the direction crossing the moving direction, the irradiation amount can be distributed in the width direction of the moving and unevenness is formed. By using the irradiation amount distribution in the width direction by this pattern and the irradiation amount distribution in the moving direction by the speed change in combination, a more complicated uneven pattern is formed.

According to a seventeenth aspect of the present invention, the material of the shield is selected from materials having different reactivities to the workpiece, and the energy beam according to any one of the first to sixteenth aspects. This is a processing method, in which only the work piece reacts selectively to maintain the shape of the shield, which extends the life of the shield and prevents contamination caused by the shield. It Only the surface of the shield may be covered with such a material.

In the eighteenth aspect of the present invention, the size of the minimum part shape of the shield is 0.1 nm to 10 nm or 1.
The energy beam treatment method according to any one of claims 1 to 17, characterized in that it is 0 nm to 100 nm or 100 nm to 10 µm. Claim 1
The invention according to claim 9 is characterized in that the shield has a plurality of repeating patterns of the same shape.
The method for processing with an energy beam according to any one of 1. As a result, a plurality of patterns are formed at the same time, the flexibility of design of the pattern to be processed and the degree of freedom of production are increased, and a more efficient ultrafine pattern is realized.

According to a twentieth aspect of the present invention, there is provided an energy beam source, a workpiece support placed at an irradiation position of the energy beam emitted from the energy beam source, and a shield having a predetermined opening pattern. And a relative movement mechanism that moves at least one of an energy beam source, a shield, and a workpiece relative to another person to form irregularities on the surface of the workpiece. It is a device. According to a twenty-first aspect of the present invention, the relative movement mechanism continuously moves at least one of the energy beam source, the shield, and the work piece relative to another person to form a smooth curved surface on the uneven surface. 21. The energy beam processing apparatus according to claim 20, wherein the processing apparatus can be formed on an inclined surface.

According to a twenty-second aspect of the present invention, the relative movement mechanism moves the at least one of the energy beam source, the shield, and the work piece relative to another in a direction orthogonal to the beam flow. 22. The energy beam processing apparatus according to claim 20, further comprising a mechanism. In the invention according to claim 23, the relative movement mechanism includes a movement mechanism that relatively moves at least one of the energy beam source, the shield, and the workpiece in a direction along the beam flow with respect to another person. An apparatus for processing with an energy beam according to claim 20 or 21. The positional relationship between the workpiece and the energy beam is arbitrarily controlled by the coarse movement and fine movement mechanisms.

The invention according to claim 24 is characterized in that the relative movement mechanism includes a movement mechanism for translating at least one of the energy beam source, the shield and the workpiece. 23 is a processing apparatus using the energy beam according to any one of 23. The invention according to claim 25 is characterized in that the relative movement mechanism includes a movement mechanism for rotating at least one of the energy beam source, the shield and the workpiece. It is a processing device by the energy beam described in. The invention according to claim 26 is characterized in that the shield is provided with a coating for lowering the reactivity with respect to the energy beam, thereby processing with the energy beam according to any one of claims 20 to 25. It is a device.

The invention according to claim 27 is characterized in that a plurality of identical patterns are repeatedly formed on the shield, and the energy beam processing apparatus according to any one of claims 20 to 26. Is. Claim 28
The invention according to claim 22 is the energy beam machining apparatus according to any one of claims 20 to 27, characterized in that the moving mechanism has a coarse movement and fine movement mechanism portion.
According to a twenty-ninth aspect of the present invention, a piezoelectric element (piezo element) drive mechanism, a magnetostrictive element drive mechanism, a thermal deformation element drive mechanism, or a combination of these and a lever mechanism is used in the fine movement mechanism section. 29. The energy beam processing apparatus according to claim 28.
Piezoelectric element (piezo element) drive mechanism, magnetostrictive element drive mechanism,
A thermal deformation element drive mechanism or a mechanism in combination with a lever mechanism thereof is used, and the one that meets each purpose and condition is selected to exert its performance.

The invention according to claim 30 is characterized in that a non-metallic material such as carbon fiber, glass, quartz fiber or polyethylene, or a metal such as tungsten, SUS or platinum is used for the shield. 20 to 2
9. A processing apparatus using the energy beam according to any one of 9 above. As a result, the material used for manufacturing the shield is selected according to the energy beam to be used, the required pattern size, and the like. Materials include glass, quartz, carbon fiber, metal wires and needles such as tungsten, SUS, platinum, silver, aluminum, Ni pattern by electroforming, metal pattern by wet etching, metal by beam processing, Si, SiO2, GaAs, etc. These include semiconductor materials, insulating materials such as ceramics, resins, and plastics, patterns of composite / graded materials thereof, heat shrink patterns of polyethylene / vinyl, and shields using dispersion / adhesion of ultrafine particles.

According to a thirty-first aspect of the present invention, the shield is a fine wire or fine particles.
A processing apparatus using the energy beam according to any one of 0 to 30. These shields can be manufactured by a simple manufacturing method and exhibit the required performance. Since these shields usually have a size of about 1 μm except for ultrafine particles, in order to form a fine shape pattern, a treatment using electric field polishing, surface dissolution by solution, heat shrinkage effect, etc. And used as a shield for any ultra-small size pattern.
The invention of claim 32 is the energy beam processing apparatus according to any one of claims 20 to 30, wherein the shield is a pattern mask manufactured by electroforming.

In the invention described in Item 33, as an energy beam source, any one of high-speed atomic beam, ion beam, electron beam, laser, radiation, X-ray, atomic beam, molecular beam, or some of them are used. 33. The energy beam processing apparatus according to claim 20, wherein a combination is used.

By using an energy beam having good straightness and directivity by the pretreatment, the processing is selectively advanced, and the ultrafine processing according to the pattern of controlling the position and the moving speed of the shield can be performed. It will be possible. By using an energy beam with good directivity in this way, the beam can reach a narrow processing location, and ultra-fine processing with a high aspect ratio, which was difficult with a plasma process, can be performed.

The fast atom beam is a neutral energetic particle beam and has a very excellent directivity, so it can be applied to any material. Since the beam can reach the gap without difficulty, it is possible to manufacture a machined bottom surface and a vertical machined wall with extremely high accuracy and good flatness.

Further, the ion beam is effective when processing a conductive material such as metal. In processing using electron beams,
The electron beam itself may be a beam emitted in the shape of a shower or a beam with a single small beam diameter.
It has a mechanism of introducing a reactive gas, irradiating an electron beam to the work piece to excite the reactive gas, and progressing the surface processing, and the electron beam irradiation controllability is excellent. Laser, radiation, and X-ray have different energy and wavelength, and the interaction effect with the surface is different, but when performing ultra-fine processing, surface desorption processing by only laser, radiation, and X-ray irradiation is performed. By using a reactive gas, the gas particles adsorbed on the surface are irradiated with laser, radiation or X, and the surface desorption processing is performed by the surface adsorbed gas particles excited by the irradiation.

The laser, the radiation and the X-ray are used properly because there is a difference in the size of the processing pattern and the effect of the absorption excitation action on the processing surface and the reactive gas particles, and therefore, an efficient one is used. If the size is an ultrafine pattern, for example, it becomes difficult to process a pattern shape smaller than the laser wavelength, so X-rays or radiation having shorter wavelengths are used. Atoms and molecular beams are low-energy particle beams, and soft processing is achieved with low damage on the processed surface.
Thus, an appropriate energy beam source is selected and used according to the processing purpose. The invention described in Item 34 is the processing apparatus by the energy beam according to any one of Items 20 to 33, wherein the energy beam is a convergent beam. Since the beam pattern in which the shield or the pattern of the shield is irradiated on the surface of the object to be processed is reduced and projected, it is possible to process a size smaller than the size of the shield or the pattern of the shield itself. In order to control the reduction ratio, the beam convergence angle and the distance between the workpiece and the shield are controlled. With such a method, it is possible to process a reduced pattern having a reduction ratio of several tenths to one tens of thousands.

According to this method, particularly when the shield or the pattern size of the shield is difficult to realize the pattern size required for processing, for example, a processing line width of 0.1 nm is desired. It is used to perform finer pattern processing than existing shields when only the rod-shaped shields of No. 1 exist.

The invention described in Item 35 is the above Item 1.
20. A method and / or claim 2 according to claim
An optical and / or quantum effect lens manufactured by using the device according to any one of 0 to 34. As a result, it becomes possible to manufacture a minute optical lens or the like in which the shape of the work piece or the curved surface in the local part of the work piece is formed. With lenses that have wavelength selectivity and energy selectivity depending on the size of the lens, the lens effect is lost at wavelengths longer than the lens size, and the lens effect occurs only with light or laser with a short wavelength. It is possible to manufacture an optical lens that brings about a non-effective effect.

Further, when the material is a material exhibiting a quantum effect, light or laser is incident on the ultrafine waveguide or lens-shaped element to change the ultrafine shape of the waveguide or change the lens shape. By applying a magnetic field to the element and the element, a phenomenon with a lens effect accompanied by a quantum effect and a wavelength shift effect occurs. As the lens shape, for example, an ultrafine protrusion is formed at the tip of the lens, and when light reaches the ultrafine protrusion, a quantum effect such as wavelength shift occurs. Conventionally, for example, in such a curved surface, it was impossible to manufacture an ultrafine projection structure at the tip, but the present invention makes it possible to realize the effect element as described above. Become.

[0035]

FIG. 1 shows an embodiment of a processing apparatus according to the present invention, in which an energy beam source 1 for generating a parallel energy beam B and a workpiece 2 at a position facing the energy beam source 1 are provided. And a gripping device 5 for gripping the shield 4 at a position between the energy beam source 1 and the workpiece 2. The support device 3 is provided with a workpiece moving device 6 for finely or roughly moving the workpiece 2, and the gripping device 5 is provided with a shield moving device 7 for finely or coarsely moving the shield 4. .

The workpiece moving device 6 is a rotary / translational moving stage, and includes three-axis translational moving mechanisms 8, 9, 10 in the X, Y, and Z directions and a rotary moving mechanism about the Z axis. 1
1 and 1 are sequentially stacked and used. The shield moving device 7 includes a translational three-axis moving mechanism 12 in X, Y, and Z directions,
13 and 14, and a biaxial parallelism adjusting mechanism 15 used for adjusting the parallelism between the surface of the workpiece 2 and the shield 4.

As shown in FIG. 2, the shield installation portion is
An ultra-precision moving mechanism 17 using the piezoelectric element 16 is installed. Here, the piezoelectric element 16 and the reducing or enlarging moving mechanism are used to control the moving speed of the fine movement in the translation direction on the order of 0.1 nm to 50 nm. It is possible in. Ultra-precision fine movement mechanism 17 using this piezoelectric element 16
An example of is shown in FIG. 3 and FIG. As the fine movement direction using the piezoelectric element, one having 1 to 3 axes is used.
Then, the case of one axis is shown, and FIG. 4 shows an example of the case of two axes.

FIG. 5 shows an apparatus similar to that shown in FIG. 1, but the supporting apparatus 6 for supporting the workpiece 2 is different. That is, it is provided with three-axis translational moving mechanisms 8, 9 and 10 and a horizontal rotating mechanism 18 around one axis to rotate the workpiece 2 around an axis perpendicular to the axis of the beam B or an oblique axis. Is possible. The gripping device 7 for the shield 4 is the same as that in FIG. 1, and the fine movement mechanism using a piezoelectric element may also have one to three axes. In addition to piezoelectric element drive,
A fine movement mechanism using the magnetostriction effect and the fluctuation effect is also used,
A moving distance control mechanism using a lever action is used according to the magnitude of the required moving distance.

The shield 4 or the workpiece 2 or both of them are installed in the coarse / fine movement mechanism by the above-mentioned device to control the translational movement of the shield and the rotational movement of the workpiece. Thus, an ultra-fine structure as specifically shown below can be manufactured.

Here, a parallel plate type high-speed atom beam source is used as the energy beam source 1, and a thin wire 20 such as a fiber or tungsten is bonded to the central portion of the square hole pattern of the Ni electroformed mask 19 as the shield 4. I use the one that I did. For the adhesion, local radical beam film formation or sputter film formation is used. In the figure, the ultrafine wire is bonded to the lower surface of the electroformed mask 19, but it may be used as the upper surface.
Further, although the thin wire 20 is formed to have a circular cross section, it may have an arbitrary cross sectional shape depending on the convenience of manufacture.

In this example, since the high-speed atomic beam is used, the material of the workpiece 2 can be any material such as metal, semiconductor, insulator, and gradient material. It is preferable to select the type of atoms forming the atomic beam that have high reactivity with the workpiece 2 and low reactivity with the shield 4. Moreover, it is preferable to select the material of the shield 4 with respect to the workpiece 2 so that such a difference in reactivity appears. In the energy beam source 1, such a gas is introduced to generate a fast atom beam. In order to reduce the gas reactivity of the shield 4, it is effective to coat the shield 4 with a thin film of gold or silver.

Here, when the X stage 12 of the shield moving device 7 is driven to finely move the shield 4 or the workpiece 2 in the x direction while irradiating the beam from the high-speed atomic beam source 1, the surface to be processed is moved. The irradiation time of the beam in each part is controlled by the movement trajectory and the movement speed of the shield 4. The irradiated portion is etched according to the irradiation time, and the portion covered with the shield remains as a convex portion without being irradiated for that time.

In FIG. 6, the workpiece W has a cross section of an arbitrary function y.
This is a case of forming a groove having a width w having a curved surface represented by = f (x). This is a parallel energy beam,
A fixed mask 41 having a slit 41a having a width w and a moving mask 42 having an edge 42a parallel to the slit are used. That is, in the state where the moving beam is irradiated with the energy beam, the moving mask 42 is in the direction (x direction) orthogonal to the edge
To block the energy beam in sequence.

In this case, since the amount of processing by the beam is proportional to the irradiation time, y = at. That is, it is sufficient that the tip of the moving mask is at the position f (x) at the time at. Therefore, at = f (x), and the inverse function of f (x) is calculated as f ⁱ
Then, the moving mask 4 is set so that x = f ⁱ (at).
You can move 2. If the surface is not smooth when trying to obtain a large amount of processing in one step, the same step may be repeated a plurality of times. In this case, the same x = f ⁱ
If it moves along the curve of (at), it may move from the opposite direction, that is, it may move back and forth.

FIG. 7 shows the case where the cross section is a straight line, that is, the case where f (x) = bx is expressed. In this case, x = (a / b) t, and the groove 21 having the slope 21a is formed by moving or reciprocating the moving mask 42 at a constant speed. In addition, this operation is performed by the moving mask 42.
If the edge 42a of is reversed and the position is shifted,
A V-shaped groove 22 as shown in FIG. 8 and an inverted V-shaped protrusion 23 as shown in FIG. 9 can be formed. In addition, V
In order to form the character-shaped groove in a shorter step, the two moving masks 42 may be moved or reciprocated in synchronization from the left and right as shown in FIG.

Although the moving mask 42 is provided in one or one set in the above embodiment, it may be provided in two or more stages as shown in FIG.
The illustrated example has a structure in which the moving masks 42 are moved in directions orthogonal to each other, but the moving direction of the moving mask 42 in each stage is arbitrary.

As a method for forming the V-shaped groove 22 more simply, there is a method shown in FIG. This is a moving mask 43 having a slit 43a having a width half the width of the groove.
Are reciprocated in the width direction by the width of the slit 43a. In this case, since a fixed mask is unnecessary, the device and process are greatly simplified as compared with the case of FIG. Moving mask 4
Although the speed changes at the point where 3 is reversed, the processing speed is usually low, so that it does not affect the shape.

Further, in order to form unevenness in two directions corresponding to FIG. 11 by this method, as shown in FIG.
The mask and the workpiece are each moved in two directions. As a result, a recess having a shape in which the two grooves intersect is formed. In this case, the same processing can be performed by only giving a rotating (scrolling) motion along an ellipse or a circle to one of the shield 44 and the workpiece W as the vector sum of the relative motions of the shield 44 and the workpiece W.

Further, the groove 24 having a flat surface at the bottom and the top.
In order to form the protrusions 25, the slit width w ′ may be made larger than the movement pitch w as shown in FIG. Although the case where the slope is formed is shown here, as shown in FIG. 15, the groove 2 having the curved surface 26a is controlled by controlling the speed.
It is easy to see that 6 can be formed.

When forming a protrusion protruding from other portions, the flat surfaces on both sides of the protrusion 23 shown in FIG. 9 are to be machined, but as shown in FIG.
By moving or reciprocating 6 by that width, it is possible to form the protrusion 27 protruding from the plane in one step. Further, as in the case of FIG. 15, by controlling the speed of the moving mask 46, it is possible to form the ridge 28 having the curved surface 28a as shown in FIG.

FIG. 18 shows an example using a shield 47 having a specific pattern shape. As shown in FIG. 4A, the pattern shape of this example has three different widths. This shield is made by electroforming. That is, a photoresist pattern is formed on a flat glass surface by photolithography,
After electroforming nickel on it, the photoresist is dissolved in a solution to remove the nickel pattern film.

As a result, a foil-like shield 47 made of nickel having a thickness of 1 to 10 μm was formed, and a pattern having a minimum width dimension of 1 μm to 5 μm was formed on it. As another example of the foil-like shield, a semiconductor thin film such as Si / GaAs using a sacrificial layer can be used. An electron beam drawing method or a photomask by electron beam drawing is used for the production of the photoresist film pattern. Since both can control the electron beam drawing shape, any pattern shape can be realized.

The width of the pattern is a: 1 μm, b: 10 μ
m, c: pattern-shaped shields having different widths are used in three steps of 20 μm. As shown in FIG. 7B, this pattern-shaped shield is set to have a movement width of 10 μm, and has the same width b as the pattern. As a result, the beam irradiation distribution changes at the respective positions of a, b, and c having different widths of the pattern shape, and therefore, as shown in FIG. , 28c can be manufactured at the same time.

As described above, according to the processing method of the present invention in which the relative movement of the pattern-shaped shield and the workpiece is controlled, it becomes possible to fabricate a micro three-dimensional structure, and a structure in which the processing amount varies depending on the pattern shape. Can be made at once. Further, such processing is used in a micro electric circuit, a micro optical circuit, or the like.

FIG. 19 and subsequent figures show still another embodiment of the present invention, in which the shield and the workpiece W are relatively moved in two directions. The two directions are typically orthogonal. The movement in the first direction forms irregularities along the same movement direction as described above, and the movement in the second direction forms such irregularities in a wider range. Basically, scanning is performed in a second direction at a specific position in the first direction, and this process is sequentially shifted in the first direction and repeated.

FIG. 19 shows a process for sharpening the end of a cylindrical work W, in which the axis of the work W is arranged orthogonal to the beam, and the plate-shaped shield 48 and the work are processed. The workpiece W is relatively moved in the axial direction, and the workpiece W is rotated around the axis. In this case, if the rotation is performed at a high speed with respect to the movement in the axial direction, a conical surface 29 having substantially rotational symmetry is created.

20 to 22 show a step of forming a circumferential groove 30 having a predetermined sectional shape on the surface of a disk or the like, and the method of FIG. 12 is applied. That is, a shield 49 that rotatably supports a disk-shaped workpiece W around an axis and that has a hole-shaped opening 49a is attached to the workpiece 1.
It is reciprocated by the width of the opening 49a in the direction of one diameter.
By changing the reciprocating speed pattern and the shape of the opening 49a, the curved surface groove 30 (FIG. 20) and the V-shaped groove 31 are formed.
(FIG. 21) and the like can be obtained. Further, the depths of the grooves 30 and 31 can be changed by adjusting the rotation speed and the like (FIGS. 21 and 22).

FIG. 23 and subsequent figures show an embodiment in which a more complicated relative motion is performed between the shield 49 and the workpiece W.
The example of FIG. 23 is an application of the method of FIG. 13, that is, on the spherical surface formed at the tip of the cylindrical workpiece W,
A plurality of smaller convex portions 30 are formed. In this case, the shield 49 having the hole-shaped opening 49a is reciprocally moved in the axial direction, and the workpiece W is swung about the same width around the axis to form the recesses between the protrusions 30. To do. By repeating this process sequentially, a large number of convex portions 30 as shown in the drawing are formed.

FIG. 24 shows a structure in which the shield 50 composed of the thin wire 50a and the frame 50b is rotated.
A protrusion 31 having a flat top and a gentle slope is formed as shown in FIG. In the mask with slits, the concavity is formed conversely, as described in FIG.

26 to 32, the direction of the energy beam incident on the workpiece through the shield is changed,
In this embodiment, relative motion is also appropriately added to form irregularities of various patterns. FIG. 26 shows the same device configuration as that of FIG. 24, in which the substrate W is rotated while being inclined by an angle θ, and as a result, an elliptical or circular protrusion 32 such as a three-dimensional ultrafine lens-like structure or , An inverse shaped recess is created.

In FIG. 27, a shield having a circular hole 51a and a workpiece W are installed, and the beam source is swung to change the incident direction of the beam. Then, as shown in (a) or (b), it is possible to form a concave portion 32 having a side surface 32a inclined and having a middle width. At this time, by appropriately controlling the rotation speed during swinging, the bottom surface can be made a flat surface 32b or a concave surface 32c as shown in (a). In FIG. 28, a shield 52 having a pattern of slit holes 52a is used to form a dovetail groove 33 whose side surface 32 is inclined. A fine rail-slider structure can be created using this workpiece W.

FIG. 29 shows an example in which the beam B makes a circular movement in a saw-tooth shape around the axis of the circular hole 51a of the shield 51. When such processing is performed, as shown in (b), the annular groove 34 having side walls with the same inclination inside and outside is formed.
Is formed. FIG. 30 shows an example in which the shield 53 having the square holes 53a is used. When the beam B is swung in two directions and the moving speed thereof is controlled, the cross groove 3 having a flat bottom surface is formed.
5 is formed.

31 and 32 show the case where the shields 53 and 54 having a plurality of fine holes are used and the beam is swayed in multiple directions, or a saw-tooth circular motion is performed. The formed hole penetrates through the workpiece W, or is performed halfway to form a multi-directional, three-dimensional, minute hole 36.
The groove 37 is processed.

A periodic fine structure as shown in FIG.
When prepared for a sample such as s, it becomes possible to prepare an element having a photonic bandgap structure capable of passing only light of a single wavelength, which can be used as a wavelength filter or an energy filter element. Moreover, when such a structure is used for a semiconductor laser,
A laser device having a single wavelength, a single mode, and a quantum efficiency of 100% can be manufactured.

As in these examples, the relative positions of the workpiece W and the shield 4 can be moved, so that the degree of freedom in designing / manufacturing, the flexibility, and the controllability in ultrafine machining are significantly improved. However, 3 in the ultra-fine processing area, which was impossible in the past
Dimensional processing and curved surface processing are possible. This control is
Generally, this is done by setting the pattern of the shields 4 ... For the shape required to be formed on the workpiece W and determining the movement and speed patterns. When the shape obtained by one shielding pattern is restricted, another pattern may be used for repeated processing, or another processing method may be used in combination. Further, the beam irradiation direction itself may be changed to perform the processing.

So far, the embodiments have been described on the premise that the energy beam is a parallel beam. However, in FIGS. 33 to 35, when the energy beam B having the converging property is used to perform ultrafine processing. An example of is shown. In FIG. 33, the fine line 50a is moved in the direction along the beam B, that is, in the Z direction to form the protrusion 38 having a smooth curved surface. A normal energy beam is not perfectly parallel and has a scattering angle to some extent. Therefore, if the distance between the shield 50a and the workpiece W is increased, a continuous energy beam irradiation distribution can be obtained. We are using.

FIGS. 34 and 35 use an energy beam which is intentionally converged, which is very effective when the shield or the pattern of the shield does not satisfy the required minute dimension. By using a convergent beam,
The pattern of the shield is reduced and projected onto the surface of the workpiece W. Therefore, the shape of the shield is reduced and transferred, and ultrafine processing can be performed. By controlling the distance between the surface of the workpiece W and the shield, the projection reduction ratio of the shield pattern can be controlled.

FIG. 34 shows an example of performing ultrafine processing by controlling the relative positional relationship between the shield 50a and the workpiece W by using the convergent energy beam. In this example, the relative position movement of one thin line-shaped shield 50a and the workpiece W is controlled, and, for example, a stationary time is created at two locations during translational movement in the x direction, and the surface of the workpiece W is Controls the amount of beam emitted. As a result, two fine ridges 39 having a smooth curved surface and a flat upper surface are reduced and projected to be formed. At this time, the distance between the shield 50a and the workpiece W is controlled by z
If they are simultaneously performed in the same direction, the reduction ratio can be controlled at the same time, and processing of the same size or processing of different sizes can be performed at two locations.

In FIG. 35, the needle 54b is attached to the spherical object 54a.
Is used as a shield 54 having a structure that extends in four directions. At this time, the center of the spherical object 54a and the center of rotation of the workpiece W are located on the central axis of the beam flying direction. When the energy beam processing is performed under such conditions, the projection 40 is formed by reducing the projection of the spherical object 54a. Needle part 54b
Since is rotating, the irradiation amount of the energy beam is uniform on the surface of the object to be processed, and finally, reduction projection processing is performed only on the shape of the spherical object. At this time, if the rotational movement of the workpiece W is controlled to periodically form the stationary time state, the reduced machining portion of the needle portion 54b is formed.

Next, some examples of the structure and manufacturing method of the minute shield will be described. As described above, the method of the present invention performs ultra-fine pattern processing, and thus the shield also needs to have an ultra-fine and highly accurate structure.

FIG. 36 shows an example of a step of making a pattern finer. As shown in FIG. 36A, a pattern structure 121 having a certain degree of fineness, which is produced in advance by electrolytic polishing or electroforming.
Is housed in a closed chamber 122, and the inside is evacuated to form a vacuum, and then a gas G having reactivity with the structure 121 is introduced. As a result, due to the reaction between the surface of the structure and the gas particles, the atoms and molecules near the surface are desorbed and processed isotropically, and the size of the structure is gradually reduced.

At this time, in order to control the chemical reactivity, the excited state of the reactive gas is controlled by irradiation of light from the lamp 123 and the temperature of the structure 121 is controlled to control the reactivity. When controlling the temperature of the structure 121,
A heater 124 may be used instead of the lamp 123. As described above, in the method of supplying the reactive gas to the surface and gradually performing the isotropic processing, it is possible to achieve the miniaturization on the order of 0.1 nm to 10 nm by controlling the processing amount with time. . This is difficult with other methods, such as immersing the shield in the reaction solution, due to the high processing speed.

FIG. 36B shows an example of manufacturing a shield 154 having a rod-shaped pattern portion 126 having a base 125. This is manufactured by combining a portion used as a shield pattern (pattern portion 126) and a portion having an appropriate size for performing handling (base portion 125), and the handling can be easily performed during and after the production. .
The base 125 may be a square member having a size of about 1 mm.

50 nm to 100 nm by electrolytic polishing or the like
The micro rod-shaped shield prototype 150a whose diameter is miniaturized is 0.1 nm to 10 nm as shown in (c) by the above method.
An ultrafine rod-shaped pattern with a diameter of nm is obtained. For example, when the material of the fine pattern is GaAs or Si, chlorine or fluorine-based reactive gas is used, and when it is tungsten, fluorine-based reactive gas is used. Further, instead of introducing the reactive gas, reactive radical particles can be introduced. When reactive radical particles are used,
Since the isotropic treatment is performed faster than the case where the reactive gas particles are used, it is effective when the amount of treatment for miniaturizing the shield is large.

In FIG. 37, a material manufactured by electroforming using Ni or the like as a material is processed by the method of FIG. 36 to further miniaturize the smallest dimension portion. Shield 15 made of Ni
In the case of 7a, a chlorine-based gas is used as the reactive gas or the reactive radical. Also, by heating the heater 124 and the lamp 123, the temperature can be increased from 500 ° K to 1000
The temperature of the shield 157a is controlled to K. As a whole, the size is reduced to about 1 μm to 10 μm.

38 and 39 show another method of producing a shield having a rod-shaped pattern, which is composed of a frame portion A, a central portion B, and a shaft C, and the shaft C is attached to a rotating body with high accuracy. A jig 131 designed to be used is used. A hole is formed in the frame portion A, and a wire rod 132a having a wire width of about 1 μm, for example, a carbon wire or a quartz fiber is provided in this portion, for example,
Wrap at regular intervals of 5 μm pitch. In order to wind at an equal pitch, the rotating body is attached to an NC lathe or the like, and the pitch is controlled by translational movement simultaneously with rotation. Then, the wire 132a is adhered to the peripheral portion of the A portion, and the A portion and the C portion are separated to obtain a shield prototype 158a as shown in FIG.

Next, the shielding prototype 158a thus produced is subjected to a vacuum container 122 into which reactive gas or reactive radical particles have been introduced by the apparatus shown in FIG. 36 (a).
In the inside, the temperature of the shield or the degree of excitation / activity of the reactive gas or the reactive radical particles is controlled to cause the surface desorption reaction of the shield, and the wire rod 132a having a diameter of 1 μm is adjusted to 0.
The pattern portion 132 having a diameter of 1 nm to 100 nm is miniaturized.

FIG. 40 shows an example in which a thin-walled portion 84 is formed in a part of the flat plate-shaped shield 83, and a patterned opening 85 is formed in this thin-walled portion 84. In the case of aluminum or stainless steel, such a thin portion 84 is formed by patterning a protective film such as a photoresist film other than the portion to be thinned, immersing it in a chemical reaction solution, and performing wet etching to remove the thin portion. The thickness is 10 μm. Further, in the case of Si, although the wet etching is possible, the thin portion 84 can be processed also by irradiation of energetic particles such as high speed atom beam processing or plasma process.

A photoresist film pattern is further formed on the thin portion 84 thus manufactured by a lithographic technique, and a pattern or a pattern hole of 10 μm or less is formed by wet etching, plasma process or high speed atom beam processing. I do. In this example, 10 mm x 10 mm
After the area of 500 μm × 500 μm was processed into the thin portion 84 in the plate-like structure 83, a plurality of fine slit arrays having a slit width of 5 μm and a pitch of 5 μm were formed as fine pattern holes 85.

By making a part of the thin-walled portion in this way, it is easy to handle with a certain rigidity, and
A shield that can prevent beam scattering at the edge of the pattern can be manufactured.

In FIG. 41, the pattern 87 of the shield 86 is formed so as to become thinner toward the edge 88 thereof. As a result, since the edge 88 of the pattern is sharp, scattering at this portion is suppressed, and clear transfer processing can be performed.

FIG. 42 shows an embodiment of a foil-like shield. Here, electroforming is used. That is, a photolithography technique is used to form a photoresist pattern on a flat glass surface,
After nickel electroforming is performed thereon, the photoresist is melted with a solution to remove the nickel pattern film 89. As a result, a foil-like shield made of a nickel material having a thickness of 1 to 10 μm is formed, and the minimum width dimension thereof is 1 μm.
A pattern of m to 5 μm was formed. In addition to the above, a thin semiconductor material such as Si / GaAs is also used as the thin film.

If such an ultra-thin shield is used,
Even when a pattern shape of 0 μm or less is formed, it is possible to prevent the directivity of the beam from being deteriorated due to the scattering by the side wall of the beam.

The foil-like shield as described above can be used as shown in FIG. That is, as shown in (a), with respect to the workpiece W in which the ridge 90 having a curved cross section is formed on the surface of the SiO ₂ material plate, a hole or groove 91 is formed on the surface of the ridge 90. When performing the forming process,
As shown in (b), a foil-like shield is adhered to a fixture (not shown) having a shape along the ridge 90, and the distance between the lower surface of the shield and the surface of the workpiece is constant at 100 μm or less. So that the beam is emitted.

In this example, a plurality of circular holes 92 having different sizes are formed as a pattern of a shield, and holes having different diameters can be formed on a curved surface by irradiating a beam in a stationary state. In this case, the diameter of the circular hole 92 is 5 μm, 10 μm
And 15 μm. Further, by moving the workpiece W in a fixed direction, a micro groove structure can be produced in the moving region.

Up to now, a method of manufacturing an ultrafine work piece has been shown. By using this method, G is used as a material of the work piece.
A quantum effect element that generates a quantum effect can be manufactured by using a semiconductor of 3-5 family such as aAs / AlGaAs / InGaAs or a Si-based semiconductor.

Further, according to the method of the present invention, since a smooth curved surface can be processed, it becomes possible to manufacture a minute optical lens. FIG. 44 shows an example in which a minute optical lens structure is manufactured and an optical lens 70 having a wavelength order of light is manufactured. When this lens 70 is used, light having a wavelength longer than the lens diameter is scattered at the same time as the conventional optical lens function is not performed, so that an optical lens having wavelength selectivity of light is used. realizable. For example, when the lens diameter is about 500 nm, long wavelength red light or the like is scattered, and short wavelength blue light or the like receives the lens effect and is condensed. Further, by utilizing such an effect, it can be used as a diffraction element for laser light, a wavelength selection device or an energy filter.

In FIG. 45, a projection 72 having an ultrafine structure is formed on the surface of the optical lens 71, and when a quantum effect occurs in the projection 72, the wavelength of the light L incident on the lens 71 and the quantum effect cause the projection. The wavelength of the generated light is set to a resonance state, and when the incident light reaches the protrusion 72 on the surface of the lens 71, stimulated emission is performed, and the light is condensed and the light intensity is increased at the same time. There is.

In FIG. 46, a large number of ultra-fine lens shapes 74 are formed on a flat plate 73, which is used as a homogenizer 76 to uniformly disperse incident light / laser and then again collimate the light / laser by a lens 75. Here is an example. Since a large number of minute lenses can be arranged, the beam intensity homogenizing performance is significantly improved.

[0090]

As described above, according to the present invention,
High degree of freedom in pattern fabrication, enabling free and accurate processing of curved and sloped surfaces of arbitrary patterns, and fabrication of lasers, light-emitting elements, and optical lens elements using quantum effects, which has been difficult to manufacture until now. Will be possible. Since the device and the process are simple, the device cost and the manufacturing cost can be greatly reduced. In addition, the processing can be performed without being restricted by the surface shape of the workpiece, and there is no need to perform a treatment that has a bad influence on the surface after the processing. Therefore, it is possible to provide a highly practical processing means.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing an overall configuration of a processing apparatus using an energy beam according to an embodiment of the present invention.

FIG. 2 is a diagram showing an ultrafine movement mechanism.

FIG. 3 is a perspective view showing the ultrafine movement mechanism in more detail.

FIG. 4 is a perspective view showing an example of another ultrafine movement mechanism.

FIG. 5 is a schematic diagram showing an overall configuration of a processing apparatus using an energy beam according to another embodiment of the present invention.

FIG. 6 is a schematic view showing an embodiment of the processing method of the present invention.

FIG. 7 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 8 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 9 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 10 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 11 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 12 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 13 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 14 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 15 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 16 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 17 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 18 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 19 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 20 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 21 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 22 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 23 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 24 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 25 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 26 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 27 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 28 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 29 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 30 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 31 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 32 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 33 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 34 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 35 is a schematic view showing another embodiment of the processing method of the present invention.

FIG. 36 is a diagram showing a structure and a manufacturing method of a shield used in the processing method of the present invention.

FIG. 37 is a diagram showing a structure and a manufacturing method of a shield of another embodiment used in the processing method of the present invention.

FIG. 38 is a diagram showing the configuration and manufacturing method of another shield used in the processing method of the present invention.

FIG. 39 is a diagram showing a step subsequent to FIG. 38.

FIG. 40 is a diagram showing a configuration of another shield used in the processing method of the present invention.

FIG. 41 is a diagram showing the configuration of another shield used in the processing method of the present invention.

FIG. 42 is a diagram showing a configuration of another shield used in the processing method of the present invention.

FIG. 43 is a diagram showing the configuration and usage of another shield used in the processing method of the present invention.

FIG. 44 is a diagram showing an example of a lens formed by the processing method of the present invention.

FIG. 45 is a diagram showing another example of a lens formed by the processing method of the present invention.

FIG. 46 is a diagram showing still another example of the lens formed by the processing method of the present invention.

FIG. 47 is a diagram showing a conventional beam processing method.

[Explanation of symbols]

1 Energy Beam Source 2 Workpiece 3 Support Device 4, 41-54, 83, 86, 89, 155, 157,
158 Shield 5 Grasping device 6 Workpiece moving device 7 Shield moving device 8,9 Translational stage 11 Rotational stage 12, 13, 14 Translational stage 17 Fine movement mechanism 18 Rotational support device 21, 22, 24, 26, 37 Groove 23 , 25, 27, 28, 39 Ridge 26a Curve 29 Conical surface 30 Convex portion 31, 38, 40, 73 Protrusion 32 Recess 32a Side surface 33 Dovetail groove 34 Annular groove 35 Cross groove 36 Hole 71, 72 Lens

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technology display location H05H 3/02 H05H 3/02 (72) Inventor Takao Kato 4-chome, Fujisawa, Fujisawa-shi, Kanagawa No. 1 Incorporated EBARA Research Institute (72) Inventor Yotaro Hatamura 2-12-11 Kohinata, Bunkyo-ku, Tokyo (72) Inventor Masayuki Nakao 4-272 Shin-Matsudo, Matsudo-shi, Chiba D-805

Claims (35)

[Claims] 1. A processing method using an energy beam, which comprises irradiating an object to be processed with an energy beam emitted from an energy beam source through a shield having a predetermined pattern, and processing the object. Irradiating an energy beam while moving at least one of the source, the shield, and the work piece relative to another person, and controlling the beam irradiation time of the work part of the work piece surface to make the surface uneven. A method of processing with an energy beam, which comprises forming a. 2. The relative movement of at least one of the energy beam source, the shield, and the workpiece is continuously performed,
The method for processing with an energy beam according to claim 1, wherein the unevenness is a smooth curved surface or an inclined surface. 3. The energy beam processing method according to claim 1, wherein the unevenness is formed along a specific direction in which the shield moves. 4. The method of processing with an energy beam according to claim 3, wherein the moving speed of the shield is controlled in accordance with the inclination of the uneven cross-sectional shape. 5. The irradiation time is controlled by moving one edge of the shield.
A processing method using an energy beam according to any one of 1. 6. The irradiation time is controlled by moving two opposing edges of the shield.
5. A processing method using an energy beam according to any one of 4 to 4. 7. The movement according to claim 1, wherein the movement is a translational movement with respect to a direction intersecting the beam.
A processing method using an energy beam according to any one of 1. 8. The method according to claim 1, wherein the movement is a rotational movement in a direction intersecting the beam.
A processing method using an energy beam according to any one of 1. 9. The method of processing with an energy beam according to claim 1, wherein the workpiece is rotated in addition to the relative movement. 10. The method for processing with an energy beam according to claim 1, wherein a fixed shield that defines a maximum range to be processed with the energy beam is used. 11. The method of processing with an energy beam according to claim 1, wherein a plurality of the shields are used. 12. The method of processing with an energy beam according to claim 1, wherein a predetermined uneven shape is formed on the shield by repeating the processing. 13. The method according to claim 1, wherein the relative movement changes an angle of the energy beam with respect to the workpiece. 14. The method of processing with an energy beam according to claim 1, wherein the relative movement is performed by a rotational movement of at least one of an energy beam source, a shield, and a workpiece. . 15. The method according to claim 1, wherein the beam irradiation amount is controlled by utilizing the opening area distribution of the pattern formed on the shield. 16. The area of the openings of the pattern of the shield is distributed in the width direction of the moving direction.
A method of processing with an energy beam according to. 17. The energy beam processing method according to claim 1, wherein a material having a different reactivity with the workpiece is selected as the material of the shield. 18. The dimension of the minimum shape of the shield is
The energy beam treatment method according to claim 1, wherein the energy beam has a thickness of 0.1 nm to 10 nm, 10 nm to 100 nm, or 100 nm to 10 μm. 19. The method according to claim 1, wherein the shield has a plurality of repeating patterns of the same shape. 20. An energy beam source, a workpiece support placed at an irradiation position of an energy beam emitted from the energy beam source, a shield having a predetermined opening pattern, an energy beam source, and a shield And a relative movement mechanism that relatively moves at least one of the workpieces with respect to another person to form irregularities on the surface of the workpiece. 21. The relative movement mechanism continuously moves at least one of the energy beam source, the shield, and the workpiece relative to another person to form the unevenness on a smooth curved surface or slope. 21. The energy beam processing apparatus according to claim 20, which is capable of 22. The relative movement mechanism includes a movement mechanism that relatively moves at least one of the energy beam source, the shield, and the workpiece in a direction orthogonal to the beam flow with respect to another person. 22. The energy beam processing apparatus according to claim 20. 23. The relative movement mechanism includes a movement mechanism that relatively moves at least one of the energy beam source, the shield, and the workpiece in a direction along the beam flow with respect to another person. A processing apparatus using the energy beam according to claim 20 or 21. 24. The relative movement mechanism includes a movement mechanism that translates at least one of the energy beam source, the shield, and the workpiece.
24. A processing apparatus using the energy beam according to any one of 23 to 23. 25. The relative movement mechanism includes a movement mechanism for rotating at least one of the energy beam source, the shield, and the workpiece.
24. A processing apparatus using the energy beam according to any one of 23 to 23. 26. The energy beam processing apparatus according to claim 20, wherein the shield is coated to reduce the reactivity to the energy beam. 27. The shield is formed with a plurality of identical patterns repeatedly.
27. The energy beam processing apparatus according to any one of 0 to 26. 28. The energy beam machining apparatus according to claim 20, wherein the moving mechanism has a coarse movement mechanism and a fine movement mechanism portion. 29. A piezoelectric element (piezo element) drive mechanism, a magnetostrictive element drive mechanism, a thermal deformation element drive mechanism, or a combination of these and a lever mechanism is used for the fine movement mechanism section. 29. The energy beam processing apparatus according to claim 28. 30. The non-metal material such as carbon fiber / glass / quartz fiber / polyethylene or the metal such as tungsten / SUS / platinum is used for the shield. A processing device using the described energy beam. 31. The energy beam processing apparatus according to claim 20, wherein the shield is a fine wire or a fine particle. 32. The energy beam processing apparatus according to claim 20, wherein the shield is a pattern mask manufactured by electroforming. 33. A high-speed atomic beam, ion beam, electron beam, laser, radiation, X-ray, or the like as an energy beam source.
33. The energy beam processing apparatus according to claim 20, wherein any one of an atomic beam and a molecular beam, or some combination thereof is used. 34. The energy beam processing apparatus according to claim 20, wherein the energy beam is a convergent beam. 35. An optical and / or quantum effect produced by using the method according to any one of claims 1 to 19 and / or the device according to any one of claims 20 to 34. lens.