JP3504426B2 - Processing method and processing apparatus using energy beam - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing method and a processing apparatus for processing a surface of an object to be processed by using an energy beam. In particular, the manufactured object is a quantum effect element, an optical lens, The present invention relates to a processing method and a processing apparatus suitable for ultrafine processing that can be applied to a friction reducing mechanism, a fluid sealing mechanism, and the like.

[0002]

2. Description of the Related Art Conventionally, in the case of processing using a photolithography technique in a semiconductor process, as shown in FIG. 41, a portion not to be processed is covered with a photoresist mask, and an uncovered portion is irradiated with an ultraviolet beam. Or
In the case of a plasma process, energetic ions are irradiated for processing. The processing depth is controlled by controlling the processing time.

Photoresist manufacturing and processing steps using photolithography used in this step will be further described. First, the substrate 202 to be processed is coated with the resist material 202 (step 1). Next, ultraviolet rays 204 are irradiated through the photomask 203, and the pattern holes 203a formed in the photomask 203 are transferred to the resist material 202 (step 2). Next, by developing this, ultraviolet rays 204 are passed through the pattern holes 203a.
The resist material 202 in the portion irradiated with is removed to expose the surface of the substrate 1 to be processed (step 3).

Next, ions or radicals in the plasma are applied to the exposed surface of the substrate 201 to be processed for anisotropic etching (step 4), and finally the resist material 202 is removed (step 5). Through the above steps, the substrate 20 to be processed
A microfabrication process of forming a hole 201c having the same shape as the pattern hole 203a of the photomask on the surface of No. 1 is performed.
This step is repeated in the process of manufacturing the semiconductor device.

[0005]

In the method of the photoresist pattern forming process using such a conventional photolithography technique, it is possible to perform processing for forming simple unevenness, but curved surface or sloped surface. In the case of processing, it is necessary to prepare a plurality of patterns, exchange them sequentially and perform irradiation to form a curved surface stepwise, which is time-consuming and requires the production of fine quantum effect devices. It was difficult to process with high precision that could be used for such purposes.

Further, as described above, a resist pattern is formed on the object to be processed by the steps of resist coating, cleaning, exposure, baking and development, and energy particles are caused to act on the object to be processed through this pattern to perform processing.
Furthermore, there is also a problem that the manufacturing cost is high because a very complicated and laborious process of removing the resist is required. Moreover, it may be difficult to form a uniform resist film due to the roughness and flatness of the surface.

Further, in the photolithography technique, when the residual photoresist is removed after the processing process, if the ashing is used, for example, the processed surface is damaged, and the removal by the solution also causes the processed surface to be damaged. However, there was a drawback that the surface was affected, such as the contamination of the above and the deterioration of the processed shape.

Further, in the processing using the plasma process, the incident directions of the ions are varied, and since the charges are accumulated in the ultra-fine region, the variation in the incident directions of the charged particles is increased. In the area, the property of legal processing is remarkable. For these reasons, the flattening processing of the bottom surface of the processing and the vertical processing of the side wall of the processing are poor. In particular, in ultrafine processing of 1 μm or less,
Precision processing becomes difficult.

The present invention has a high degree of freedom in pattern formation,
(EN) Provided are a method and an apparatus capable of freely and accurately processing an ultrafine pattern on a curved surface or a slope of an arbitrary pattern with a simple configuration, and further, to provide an element with excellent performance produced by the method. The purpose is to

[0010]

According to a first aspect of the present invention, there is provided a method for irradiating an object to be processed with an energy beam generated from an energy beam source through a shield to process the object, and the shield is provided. object is an elastic body, the energy beam and performing processing which position-decided tanning on the surface of the該被treated, a pattern with the said shield so as to transfer to the object to be processed on the surface Is the processing method .

[0011] Also, the shield has flexibility, it may be attachable to deform along the surface of the workpiece. As a result, it is possible to improve the adhesion even to an uneven object to be processed and to make the distance between the shield and the object to be processed uniform.

Further, the shield mounting over polygon of the workpiece, it is preferable to perform the treatment by irradiating these multifaceted simultaneously or sequentially beam. As a result, multi-sided processing can be performed without taking in and out the object to be processed from the processing chamber that is normally in a predetermined atmosphere. Further , it is preferable that the object to be processed has a curved surface and the shield is attached along the curved surface.
Good In addition , it is preferable that the above-mentioned processing is performed by moving the object to be processed and the shield integrally with respect to the beam source to perform pattern processing on the surface of the object to be processed having different orientations.

Further, the above-described processing, the shield repeatedly performed from relatively moving with respect to the object to be treated, preferably be performed a process is transferred by superimposing a pattern of shield
Yes . If this repetitive process is performed at the same location, the patterns are superimposed and transferred, and if performed at different locations, a plurality of patterns are formed. Further, the relative movement may be rotational movement. Further, the relative movement may be translational movement.
Further, the energy beam may be irradiated while rotating the object to be processed. As a result, the patterned beam scans the surface of the object to be processed to form arcuate grooves or annular grooves.

Further, the energy beam is a fast atom beam, ion beam, electron beam, laser, radiation, X-rays, is preferably any one of an atomic beam and molecular beam. In addition, the dimension of the minimum shape of the shield is 0.1 nm to 1
0 nm or 10 nm to 100 nm or 100 n
It may be m to 10 μm. Further, one embodiment of the present invention is
The energy beam source and the energy beam source
A treatment located at the irradiation position of the emitted energy beam
Physical support, multiple shields, and
At least one support that supports one relative to the other.
An energy beam characterized by having a holding device
It is a processing device .

[0015] may also be a shield to have a mechanism for rotational movement relative to the object to be processed. Further, the shield to have a mechanism for translational movement relative to the article to be treated
May be . Further , a mechanism for rotating and moving the object to be processed with respect to the shield may be provided.

[0016] In addition, the thin-walled portion formed on a part of the shielding member,
A patterned opening may be formed in this thin portion. Further, the thin member may be formed by exposing the shielding member to energetic particles. Moreover, you may pattern-process a foil-shaped piece. Further, the thickness of the thin portion or the foil piece may be 10 μm or less.

Further, the pattern of the shield may be formed so as to become thinner toward the edge thereof. Further , the pattern may be processed by using an energy beam to form a fine dimension shield. Here, fine lines may be stretched and fixed to the frame body to form a fine pattern. Further, the surface may be coated with a substance having low reactivity with the energy beam.

Further, the shield formed by electrolytic polishing or fine electroforming pattern or the like, was placed in the container provided that the chemically reactive gas or reactive radical particles, be further miniaturized by the surface chemical reaction Good . Also , in order to control the size of the minimum part, the temperature of the shield or reactive gas particles / reactive radical particles is controlled by using a heater, laser, infrared lamp, visible light lamp, ultraviolet lamp, radiation, X-ray lamp, etc. Alternatively, the activity may be controlled to control the surface reactivity between the shield surface and the chemically reactive gas or reactive radical particles.

Also, using any of the above inventions ,
It is preferable to manufacture a child effect element . In addition, the above
Using either a bright, frictional forces and / or conductance
It is preferable to fabricate a member having a soot reducing effect .

[0020]

1 shows the most basic embodiment of the method according to the invention. Here, a minute bar (thin line) shield (for example, as shown in FIG.
Width 0.1 nm to 10 nm or 10 nm to 100 n
m or 100 nm to 10 μm) 50,
The processing is performed by irradiating an energy beam from above. When the kind of the energy beam B is appropriately selected and irradiated, the object W to be processed is etched and the ridges 71 are formed as shown in FIG. 1B.

As the energy beam B, a high-speed atom beam having good directivity in which energetic particles have no electric charge is used. The fast atom beam uses chlorine or fluorine-containing gas,
For example, Japanese Patent Application No. 3-261231 previously proposed by the applicant
1. Operate the fast atom beam source described in. As a result, a high-directivity high-speed atom beam is generated, and the beam that has passed through the shield reaches the surface of the object to be processed. As the workpiece W, Si.
Although GaAs is used, other semiconductor materials, insulators such as glass and quartz, and metals can be used. The shield 50 has a diameter of about 5 by electrolytic polishing.
A shielding material such as tungsten, gold, silver, platinum, nickel, etc., which has been miniaturized to about 0 μm and made fine, is used. The shield 50 is held in a state of being positioned on the substrate surface by an appropriate method.

Further, instead of the removal treatment such as etching, an additional treatment for forming the coating film 72 and the like as shown in FIG. 1C can be performed by changing the gas species and energy. The beam energy is set to several eV to several hundred eV,
If, for example, a gas containing carbon-based methane, aluminum, or titanium is used as the gas species, the insulating film / conductive film is formed in the beam irradiation portion according to the characteristics, and the pattern of the shield 50 is transferred. The film is made.

FIG. 2 shows another embodiment in which a shield is placed directly on the object to be processed, and a thin wire 51 is spirally wound around the outer periphery of the cylindrical object W and placed in the energy beam. By rotating around the axis, the spiral protrusion 74 can be formed in the lower portion of the thin wire. Thus, by winding the thin shield directly on the object to be processed, it is possible to relatively easily form a complicated shape on the surface of the object to be processed three-dimensionally.

In FIG. 3, a tape-shaped shield 52 is wound in place of the thin wire, whereby a wider ridge than in the case of FIG. 2 is formed. Such a method is not limited to the shape of the object to be processed, and is, for example, a rectangular tube, a rectangular parallelepiped,
It can be applied to three-dimensional bodies such as cones and spheres. Further, the partial processing may be repeated to process a complicated shape. Further, it is possible to form more complicated unevenness by forming openings of a predetermined pattern on this shield. By using a thin wire or a thin film-like shield as in these examples, it is possible to save the labor of processing each of the multiple surfaces and improve the work efficiency.

In the embodiment shown in FIG. 4, the object W to be processed is placed on the table, and the thin film-like shield 53 is placed on the object W and fixed to the table. As a result, as compared with the case where the flat shield 54 as shown in FIG. 5 is used, the shield can be brought into close contact with the workpiece W, so that the distance between the shield and the workpiece becomes short and constant, The pattern transfer becomes clear. The distance for performing clear transfer is said to be about 100 μm, and the thin film shield 53 may be provided with appropriate elasticity in order to achieve such close contact. In this case, adhesion is improved and workability such as winding is also improved. The elastic film-shaped shield 53 can be manufactured from a composite material in which a suitable metal or the like is mixed with resin or rubber. Note that a plurality of shields may be stacked and placed on the surface.

FIG. 6 shows an example in which minute processing is performed using the method of FIG. 4, and the workpiece W has a diameter of 0.5 mm.
This is a polyimide rod. A nickel foil 53 having a round hole with a diameter of 200 μm is wound around this, as shown in FIG. Since the nickel foil 53 has a small thickness of 10 μm, it can be wound. In this state, the mask 53
When a fast atom beam of oxygen is irradiated from above, a round hole 75 with a diameter of 200 μm can be formed in the direction perpendicular to the axis as shown in (b). When such a material is manufactured, it is useful as a basic structural material when manufacturing a micro device, as shown in (c).

FIG. 7 and subsequent figures are for explaining another embodiment of the processing method of the present invention, in which the shield is arranged at a position distant from the object to be processed, and a beam source and a shield are provided as necessary. This is to change the relative position of the object and the object to be processed. Figure 7
1 shows an embodiment of a processing apparatus used in this method, which includes an energy beam source 1 for generating a parallel energy beam B, a support device 3 for supporting an object to be processed W at a position facing the energy beam source 1. A gripping device 5 that grips the shield 4 is provided between the energy beam source 1 and the object W to be processed. The support device 3 is provided with an object moving device 6 that moves the object 2 slightly or roughly, and the gripping device 5 is provided with a shield moving device 7 that moves the object 4 slightly or roughly. .

The object moving device 6 is a rotary / translational moving stage, and includes three-axis translational moving mechanisms 8, 9, 10 in the X, Y and Z directions, and a rotary moving mechanism about the Z axis. 1
1 and 1 are sequentially stacked and used. The shield moving device 7 includes a translational three-axis moving mechanism 12 in X, Y, and Z directions,
13 and 14, and a biaxial parallelism adjusting mechanism 15 used for adjusting the parallelism between the surface of the object to be processed 2 and the shield 4.

As shown in FIG.
An ultra-precision moving mechanism 17 using the piezoelectric element 16 is installed. Here, the piezoelectric element 16 and the reducing or enlarging moving mechanism are used to control the moving speed of the fine movement in the translation direction on the order of 0.1 nm to 50 nm. It is possible in. Ultra-precision fine movement mechanism 17 using this piezoelectric element 16
An example of is shown in FIG. 9 and FIG. Although the fine movement direction using the piezoelectric element has one to three axes, FIG. 9 shows a case of one axis, and FIG. 10 shows an example of a case of two axes.

FIG. 11 shows a device similar to that shown in FIG. 7, but the supporting device 3 for supporting the workpiece W is different. That is, the three-axis translational moving mechanisms 8, 9 and 10 and the horizontal rotating mechanism 18 around one axis are provided to rotate the workpiece W about an axis perpendicular to the axis of the beam B or an oblique axis. Is possible. The holding device 5 for the shield 4 is the same as that in FIG. 7, and the fine movement mechanism using the piezoelectric element is also the same in that it may have one to three axes. In addition to piezoelectric element drive,
A fine movement mechanism using the magnetostriction effect and the fluctuation effect is also used,
A moving distance control mechanism using a lever action is used according to the magnitude of the required moving distance.

Next, the structure and manufacturing method of the minute shield 50 will be described. As shown in FIG. 12 (a), a somewhat fine pattern structure 21 prepared in advance by electropolishing or electroforming is housed in a closed chamber 22, and the inside is evacuated to form a vacuum. On the other hand, a reactive gas G is introduced. As a result, due to the reaction between the surface of the structure and the gas particles, the atoms and molecules near the surface are desorbed and processed isotropically, and the size of the structure is gradually reduced.

At this time, in order to control the chemical reactivity, the excited state of the reactive gas is controlled by irradiation of light from the lamp 23 and the temperature of the structure 21 is controlled to control the reactivity. When controlling the temperature of the structure 21, a heater 24 may be used in addition to the lamp 23. In this way, the method in which the reactive gas is supplied to the surface to gradually perform the isotropic processing treatment is controlled by controlling the treatment amount with time.
It is possible to miniaturize on the order of nm to 10 nm.
This is difficult with other methods, such as immersing the shield in the reaction solution, due to the high processing speed.

FIG. 12 (b) shows an example of manufacturing the minute rod-shaped shield 50 used in the embodiment of FIG. The minute rod-shaped shield prototype 50a, which has been previously miniaturized to a diameter of 50 nm to 100 nm by electrolytic polishing or the like, is formed by the above-mentioned method.
It becomes an ultrafine rod-shaped pattern with a diameter of 0.1 nm to 10 nm.
For example, when the material of the fine pattern is GaAs or Si, chlorine or fluorine-based reactive gas is used,
In the case of tungsten, a fluorine-based reactive gas is used. Further, instead of introducing the reactive gas, reactive radical particles can be introduced. When the reactive radical particles are used, the isotropic treatment is performed faster than when the reactive gas particles are used. Therefore, it is effective when the amount of treatment for miniaturizing the shield is large.

FIG. 12C shows an example of manufacturing the shield 54 having the rod-shaped pattern portion 26 having the base portion 25. This is a portion used as a shield pattern (pattern portion 2
6) and a portion (base portion 25) having an appropriate size for carrying out the handling are combined, and the handling can be easily performed during and after the manufacturing. The base 25 may be a square member having a size of about 1 mm. Similar to the case of FIG. 12B, the shield prototype 54a having the rod-shaped portion 26a by the conventional method.
And the minute shield 5 is formed by the method shown in FIG.
Set to 4.

At the time of beam processing, as described above, the base portion 25 is attached to a manipulator or a rotation / translation stage equipped with an ultrafine position moving mechanism, and moved as necessary. Therefore, in this example, unlike the previous example, the surface of the object to be processed and the shield are supported separately. This distance is sufficient if it is about 0 to 100 μm, and if it is further separated, it may be influenced by beam scattering. Note that FIG. 13 shows a minute shield 55 of still another embodiment, and in this example, a plurality of rod-shaped portions 26 a are formed integrally with the base portion 25.

FIG. 14 shows a shield 56, which is made by electroforming using Ni or the like as a material and in which the base portion 27 and the pattern portion 28 are integrally formed. This is also shown in FIG.
As in (c) and the example of FIG. 13, it is attached to a manipulator or a rotation / translation stage, and moved and used as necessary. As mentioned in the example of FIG. 1,
By changing the beam energy or the gas species, it is possible to carry out an etching process (FIG. 14A) or a film forming process (FIG. 14B).

FIG. 15 shows an example of a shield manufacturing method for further miniaturizing the shield of the embodiment of FIG.
This is an example in which the smallest dimension portion of the pattern portion 30a of the shield 57a produced by electroforming using the above as a material is further miniaturized to form the shield 57. The equipment and process for production is
It is similar to that shown in FIG. In the case of the Ni shield 57a, a chlorine-based gas is used as the reactive gas or the reactive radical. Further, the temperature of the shield 57a is controlled from 500 ° K to 1000 ° K by heating the heater 24 and the lamp 23. As a whole, the size is reduced to about 1 μm to 19 μm.

16 and 17 show another method for producing a shield (having a different number of pattern portions) which forms the same pattern as the shield 56 used in FIG. As shown in FIG. 16, it comprises a frame portion A, a central portion B, and an axis C,
A jig 31 is used in which the shaft C is accurately attached to the rotating body. Holes are formed in the frame portion A, and a wire rod 32a having a wire width of about 1 μm, for example, a carbon wire or quartz fiber is wound around this portion at equal intervals of, for example, 5 μm. In order to wind at an equal pitch, the rotating body is attached to an NC lathe or the like, and the pitch is controlled by translational movement simultaneously with rotation. After that, the wire 32a is adhered to the peripheral portion of the A portion, and the A portion and the C portion are separated to form the shield prototype 58a (see FIG. 17).

Next, the shielding prototype 58a thus produced is subjected to the temperature of the shielding in a vacuum container 22 into which reactive gas or reactive radical particles are introduced by the apparatus shown in FIG. 12 (a). Alternatively, by controlling the degree of excitation / activity of the reactive gas or the reactive radical particles, the surface desorption reaction of the shield is performed, and as shown in FIG. 17, the wire 32a having a diameter of 1 μm has a diameter of 0.1 nm to 100 nm. The pattern portion 32 is miniaturized.

When the shield 58 produced in this way is used for processing, it is possible to perform the processing shown in FIG. 1 (a), FIG. 12 or FIG.
The structures shown in FIGS. 1B and 1C are produced in the same manner as the case of using the shield of FIG.

Further, by using the shield of FIG. 14, FIG. 15 or FIG. 17 and changing the position with respect to the object W to be repeatedly processed, for example, a structure in which two patterns are overlapped as shown in FIG. That is, it is possible to manufacture a structure in which the protrusions 33 and the protrusions 34 are formed at the intersections of the protrusions 33. First, beam irradiation is performed using the energy beam and the shields 43 to 45, and then the shields 50 to 58 are rotated 90 ° with respect to the object W to be processed again. This rotary movement may be performed using the rotary table 11 of the apparatus shown in FIG. The microstructure thus manufactured can reduce the frictional force on the sliding surface, the sliding surface, the lapping surface, and the like. Therefore, by processing such a microstructure on an optical / magnetic disk, a rotary bearing, or the like, it is possible to manufacture a high-performance device in which the frictional force is reduced.

FIG. 19 shows another embodiment of the shield 59.
The wire material 32a is adhered to both surfaces of the substrate 35 by the method of FIG. 16, and the pattern portion 32 is miniaturized by the device and method of FIG. As a result, the ridges 36 that intersect the surface of the object W to be processed are formed. Furthermore, FIG.
20 is performed to form a structure having similar ridges 36 on a plurality of surfaces as shown in FIG.

FIG. 21 shows another method of manufacturing the shield 60 equivalent to that of FIG. 17, in which the material of the wire 37 is gold and the thickness thereof is 20 μmφ. A gold wire is stretched on the silicon substrate 39 bonded on the aluminum plate 38 using a wire bonder for wiring the semiconductor chip. The wire 37 is stretched from the pad 40 on the aluminum plate 38 to the opposing pad 40 through the V groove 41 formed in the silicon substrate.

In a normal wire bonder, it is not easy to wire at a pitch of 20 μm, but as shown in the figure,
If a gold wire is stretched along the V groove, self-alignment can be performed at intervals of 20 μm. Further, in order to prevent the gold wire 37 from bending, the aluminum plate 38 is tightened on the aluminum plate 43 having the knife edge 42 with the bolt 5. As a result, the aluminum plate 2 bends in an arcuate shape as shown in FIG. 2B, pulls the gold wire, and removes the bending of the gold wire.

As described above, by using the thin wire 37 as the material of the shield, the shield can be manufactured relatively easily. Since the surface of the wire is smooth and the wire width is constant, the dimensional accuracy is high and the tensile strength is also high.Therefore, if it is used in a pre-pulled state, the temperature will rise during use and the frame of the shield will be thermally expanded. Even if it expands, the slit does not bend. It should be noted that a wire of an appropriate material, for example, an aluminum wire, may be used instead of the gold wire.
Finer lines can be formed by electrolytic polishing or etching.

As another method for producing a shield, a method of applying a resist pattern to a stainless steel foil and then wet-etching to penetrate the pattern and then removing the resist, or making a hole in a polyimide thin plate with a laser. As in the method and electroforming technique, there is a method in which a resist pattern mold is formed on a glass plate, nickel is electrolessly plated on the mold, and the nickel is peeled off.

FIG. 22 shows an embodiment of a flat shield.
The plate-shaped shield 80 is usually of a thickness that can be used as a rigid body, and is a stainless plate material having a thickness of more than 100 μm. In this example, a 100 μm thick stainless plate is provided with fine pattern holes. The fine pattern was produced by drilling with a laser beam. A laser oscillator that emits an infrared laser such as a CO ₂ gas laser or a YAG laser and a lens system that narrows the laser to a minute spot are used to control the position of the processing stage and the laser light irradiation amount.
It is a shield having a slit hole 81 having a width of 100 μm and a length of 500 μm as shown in the figure.

In the processing using the energy beam,
When processing the shape in which the pattern of the shield is transferred, the thickness of the shield and the dimension of the pattern shape greatly affect the processing accuracy. With the thickness of a normal plate-shaped structure, it is difficult to process fine pattern holes with high accuracy, and the effect of beam scattering occurs on the side walls of the pattern, making it difficult to transfer a fine pattern shape with high accuracy. Become. Further, when the pattern size is small, even if a thick shield is used, problems such as a beam scattering effect by the side wall of the hole and adhesion of sputtered particles to the processed surface occur. Such a problem becomes remarkable when the pattern size is 10 μm or less.

The example of FIG. 23 deals with this problem.
A thin portion 84 is formed on a part of the shield 83.
4 is an example in which a patterned opening portion 85 is formed in No. 4. In the case of aluminum or stainless steel, such a thin portion 84 is formed by patterning a protective film such as a photoresist film other than the portion to be thinned, immersing it in a chemical reaction solution, and performing wet etching to remove the thin portion. The thickness is 10 μm. Further, in the case of Si, although the wet etching is possible, the thin portion 84 can be processed also by irradiation of energetic particles such as high speed atom beam processing or plasma process.

A photoresist film pattern is further formed on the thin portion 84 thus manufactured by a lithographic technique, and a pattern and a pattern hole of 10 μm or less are formed by wet etching, plasma process or high speed atom beam processing. I do. In this example, 10 mm x 10 mm
After the area of 500 μm × 500 μm was processed into the thin portion 84 in the plate-like structure 83, a plurality of fine pattern holes 85 were formed, and a fine slit array having a slit width of 5 μm and a pitch of 5 μm was formed.

FIG. 24 shows another embodiment for solving the above problem, in which the pattern 87 of the shield 86 is formed so as to become thinner toward the edge 88 thereof. As a result, since the edge 88 of the pattern is sharp, scattering at this portion is suppressed, and clear transfer processing can be performed.

Furthermore, when a shield having a thickness of 100 μm or more is used to form a pattern shape of several tens of μm or less, the side wall of the pattern hole is larger than the pattern and the size of the pattern hole. For this reason, the directivity of the beam deteriorates due to the scattering by the side wall of the beam.

FIG. 25 shows an embodiment of a foil-like shield for solving the above problems. Here, electroforming is used. That is, a photoresist pattern is formed on a flat glass surface by a photolithography technique, nickel is electroformed on the photoresist pattern, and then the photoresist is dissolved with a solution to remove the nickel pattern film 89. By this, 1
A foil shield made of nickel having a thickness of 10 μm was formed, and a pattern having a minimum width dimension of 1 μm to 5 μm was formed on the foil shield. As another example of the foil-like shield, a semiconductor thin film such as Si / GaAs using a sacrificial layer can be used.

The foil-like shield as described above is shown in FIG.
As shown in FIG. 26, it can be directly attached to the object to be processed, but as shown in FIG. 26, it can also be arranged so as to be relatively movable. In this example, SiO ₂ as shown in (a) is used.
This is a case where a workpiece W having a ridge 90 having a curved cross section formed on the surface of a plate made of a material is subjected to a process of forming a hole or groove 91 on the surface of the ridge 90. As shown in (b), a foil-like shield is adhered to a fixture (not shown) having a shape along the ridge 90, and the distance between the lower surface of the shield and the surface of the object to be treated becomes constant at 100 μm or less. So that the beam is emitted.

In this example, a plurality of circular holes 92 having different sizes are formed as a pattern of a shield, and holes having different diameters can be formed on a curved surface by irradiating a beam in a stationary state. In this case, the diameter of the circular hole 92 is 5 μm, 10 μm
And 15 μm. Further, by moving the object W to be processed in a fixed direction, a micro groove structure can be produced in the moving region.

In such processing, if the distance between the shield 89 and the workpiece W becomes longer than 100 μm,
There is an adverse effect due to the scattering of the beam and the deviation of the perpendicularity to the beam axis, but since this shield 89 is foil-shaped and can be freely deformed, it does not suffer this adverse effect. Therefore, processing on an uneven surface is also possible. It can be performed with high precision.

FIG. 27 shows a shield 93 having a pattern shape having different widths in three steps. With respect to this pattern, a photoresist film pattern is produced by a lithographic technique, and a nickel pattern is produced by electroforming. An electron beam drawing method or a photomask by electron beam drawing is used for the production of the photoresist film pattern. Since both can control the electron beam drawing shape, any pattern shape can be realized.

In each of the above embodiments, for example,
If a fast atom beam is used as the beam and the shield is Si, gold may be vapor-deposited on the shield to prevent chemical reaction due to the fast atom beam.

FIG. 28 shows another embodiment of the present invention, in which one shield is moved to repeatedly irradiate a beam to process a plurality of patterns.
That is, if one shield 50 having an ultrafine diameter is used and is made to stand still a plurality of times in a series of movements when it is translated, the energy beam irradiation dose decreases at that rest position, and at each position. The ridge 73 is formed. For the translational movement, the translational movement mechanism (translation stage) 8, 9, 12, 13 of the apparatus of FIG. 7 or 11 may be used. In this method, a processing having a large number of patterns can be performed using the shield 50 having one pattern, and the pitch thereof can be arbitrarily adjusted by the translational movement mechanism.

FIG. 29 shows an embodiment used when the shield 61 does not satisfy the required ultrafine dimensions. For example, although it is desired to form a 10 nm ultra-fine ridge on the substrate W,
When only the shield 61 with a width of 1 μm is present, as shown in FIG. 29, the processing is performed using the edges of both end faces of the shield 61. By finely moving either the shield 61 or the object W to be processed (the figure does not correspond to the actual size), the energy beam processing is performed by controlling so that only the region having a width of 10 nm is completely shielded. Width 10 at the top of the steps 74
nm ridges 75 are formed.

30 to 32 show an embodiment in which a plurality of shields are superposed and these patterns are superposed. In FIG. 30, a crescent-shaped pattern is formed by stacking a shield 62 having a circular hole pattern and a shield 63 having a disc-shaped pattern having a diameter smaller than that of the circular hole. This makes it possible to form a complicated pattern using a relatively simple pattern. Since it is not easy to produce a fine and complicated pattern, it is useful in that case.

FIG. 31 shows another embodiment in which a plurality of shields are piled up. In this case, the size and shape of the space formed between them can be changed by moving the positions of the two shields relatively. There is an advantage that you can. In this example,
The two L-shaped shields 64 are combined to form a rectangular space between them. This is used, for example, when only a part of the circuit of the IC is modified as shown in FIG. Each shield 64 moves by being attached to a fine movement mechanism using a piezo element as shown in FIGS. 8 to 10, for example. Such partial processing is performed by, for example, FIB (Focused Ion).
Beam) can also be used for scanning, but this requires a longer time than the method of the present invention.

The object to be processed is GaAs.AlGaAs.I.
When it is a 3-5 group semiconductor such as nGaAs or a Si semiconductor, it can be used as a quantum effect element that generates a quantum effect. FIG. 33A shows an example of a structure called a quantum wire structure. According to this, the energy level state is changed by the quantum effect, and light emission or laser oscillation having a shorter wavelength than the bulk state can be performed. in this case,
Although it is a quantum wire structure, as shown in the examples so far, it is possible to fabricate a structure such as a quantum box / quantum rod by performing relative position movement control of the shield and the object to be processed and multifaceted processing.

In FIG. 33A, two types of quantum structures perform the same excitation state, for example, excitation by a strong magnetic field or optical excitation, and oscillate two types of lasers having different wavelengths (λ ₁ , λ ₂ ). It is an example of a quantum effect element. Two rows of ultrafine protrusions 100 are arranged on the substrate W, the light emitted from the excited electronic state is amplified, and a laser is emitted from one of both ends. At that time, the quantum effect is different because the size effect of each row is different, and lasers of different wavelengths are emitted.

An example of manufacturing the above-mentioned quantum effect laser device according to the present invention is shown in FIG. Here, a mask 65 in which two rows of holes 101 corresponding to the sizes of the two rows of protrusions 50 that emit _two wavelengths λ ₁ and λ ₂ are arranged is used. The mask 65 is placed on the surface of the substrate 2 or separated by a certain distance, and an energy beam B such as a fast atom beam is irradiated. As a result, a processing in which the pattern hole pattern shape of the mask 65 is transferred onto the substrate W is performed, and a laser oscillation element having a quantum effect shape having a row of the protrusions 100 as shown in FIG. To be done.

FIG. 34 shows an embodiment in which the present invention is applied to the production of a bearing having a labyrinth seal structure. A groove 104 running in the circumferential direction is formed on the inner surface of the bearing 102 for receiving the shaft W.
Is formed. The bearing 102 is manufactured by the method shown in FIG. That is, one bearing is composed of two split bearing portions 103, and the energy beam B is passed through the mask 66 to the inner surface of each divided bearing portion.
Is irradiated to perform the processing of a groove having a minute width. The mask 66 is provided with a plurality of slits 67 having a minute width, and the slits 67 are provided above the processed surface of the inner surface of the bearing 103 to irradiate the energy beam B such as a high-speed atomic beam. . The bearing 102 having the labyrinth seal structure is manufactured by assembling the two parts thus manufactured into one.

FIG. 36 shows another embodiment in which the present invention is applied to a bearing structure, in which a minute recess 1 is formed on the surface of the shaft W.
05 is formed to reduce friction between the shaft body 105 and the bearing 106. This shaft W is processed by the method shown in FIG. That is, the recess 10 to be processed
A mask 68, in which holes 69 corresponding to the size and arrangement of No. 5 are arranged, is installed at a certain distance from the shaft W, and an energy beam B such as a fast atom beam is irradiated. In this embodiment, a mask 68 having a size that covers a part of the shaft is used, and the shaft W is rotated after irradiation for a certain time, and another surface is sequentially processed. did. Further, in order to form the uniform recesses 69, an arc plate-shaped mask may be used, and a converging beam that converges on the axis of the shaft body may be used.

FIG. 38 shows another embodiment in which the present invention is applied to manufacture of a bearing structure. A plurality of seal rings 108 are stacked inside a bearing flange 107 and bonded to each other to form a bearing 109 having a labyrinth seal structure. To make. This seal ring 108 (see FIG. 39) is intended to reduce the frictional resistance while maintaining the function of the labyrinth seal by reducing the thickness a of the minimum clearance portion in the central portion.

In this fabrication, as shown in FIG. 40, a hole 110 to be the minimum clearance portion is provided in advance, and in order to reduce the thickness b of that portion, it is slightly larger than the diameter of the hole of the minimum clearance portion. Large diameter hole pattern 70a
The seal ring 108 is processed using the shield 70 having In the processing using the energy beam B, the processing amount corresponds to the energy beam intensity. Therefore, if the beam irradiation amount is reduced, the processing speed decreases, and if the processing time is adjusted, the thickness a to be left is considerably increased. It can be controlled with the accuracy of. Therefore, it is possible to obtain a structure that maintains the labyrinth seal function while reducing friction.

[0070]

As described above, according to the processing method or the processing apparatus of the present invention, the processing with a high degree of freedom in pattern formation can be performed with high accuracy by a simple working process and apparatus configuration, and therefore, a wide range of processing is possible. It is effectively used in the industrial field and contributes to improvement of processing efficiency and production of highly accurate and reliable products. In particular, it is useful in the processing of ultra-fine areas that are increasingly needed in a wide range of fields such as precision machinery, semiconductors, and mechatronics, and has the potential to open the way to the in-process production of new products with new functions.

[Brief description of drawings]

FIG. 1 is a perspective view showing an embodiment of a processing method of the present invention.

FIG. 2 is a perspective view showing another embodiment of the processing method of the present invention.

FIG. 3 is a perspective view showing another embodiment of the processing method of the present invention.

FIG. 4 is a perspective view showing another embodiment of the processing method of the present invention.

FIG. 5 is a perspective view showing another embodiment of the processing method of the present invention.

FIG. 6 is a perspective view showing another embodiment of the processing method of the present invention.

FIG. 7 is a schematic diagram showing the overall configuration of an energy beam processing apparatus according to an embodiment of the present invention.

FIG. 8 is a diagram showing an ultrafine movement mechanism.

FIG. 9 is a perspective view showing the ultrafine movement mechanism in more detail.

FIG. 10 is a perspective view showing an example of another ultrafine movement mechanism.

FIG. 11 is a schematic diagram showing the overall configuration of an energy beam processing apparatus according to a second embodiment of the present invention.

FIG. 12 is a diagram showing a configuration and manufacturing method of a shield used in the processing method of the present invention.

FIG. 13 is a diagram showing a structure and a manufacturing method of a shield of another embodiment used in the processing method of the present invention.

FIG. 14 is a schematic view showing still another embodiment of the processing method of the present invention.

FIG. 15 is a diagram showing the configuration and manufacturing method of another shield used in the processing method of the present invention.

FIG. 16 is a diagram showing still another method of manufacturing a shield used in the processing method of the present invention.

FIG. 17 is a diagram showing a further post-process of the method for manufacturing the shield of FIG.

FIG. 18 is a diagram showing an example of a processing method using the shield of FIG. 16.

FIG. 19 is a view showing the structure of still another shield and a processing method using the same.

FIG. 20 is a diagram showing another example of a structure formed by the processing method of the present invention.

FIG. 21 is a diagram showing the configuration and manufacturing method of another shield used in the processing method of the present invention.

FIG. 22 is a diagram showing a configuration of another shield used in the processing method of the present invention.

FIG. 23 is a diagram showing a configuration of another shield used in the processing method of the present invention.

FIG. 24 is a diagram showing a configuration of another shield used in the processing method of the present invention.

FIG. 25 is a diagram showing a configuration of another shield used in the processing method of the present invention.

26 is a diagram showing a processing method of the present invention using the shield of FIG. 25.

FIG. 27 is a diagram showing a configuration of another shield used in the processing method of the present invention.

FIG. 28 is a diagram showing another embodiment of the processing method of the present invention.

FIG. 29 is a diagram showing another embodiment of the processing method of the present invention.

FIG. 30 is a diagram showing another embodiment of the processing method of the present invention.

FIG. 31 is a diagram showing another embodiment of the processing method of the present invention.

FIG. 32 is a diagram showing another embodiment of the processing method of the present invention.

FIG. 33 (a) is a diagram showing an example of a quantum effect device produced by the method of the present invention, and FIG. 33 (b) is a diagram showing the production method thereof.

FIG. 34 is a diagram showing an example of a bearing having a labyrinth seal produced by the method of the present invention.

FIG. 35 is a diagram showing a method of manufacturing the bearing of FIG. 34.

FIG. 36 is a diagram showing another example of a bearing having a labyrinth seal produced by the method of the present invention.

37 is a diagram showing a method of manufacturing the bearing of FIG. 36. FIG.

FIG. 38 is a view showing still another example of a bearing having a labyrinth seal produced by the method of the present invention.

FIG. 39 is a view showing a main part of the bearing shown in FIG. 38.

FIG. 40 is a diagram showing a method of manufacturing the bearing of FIG. 39.

FIG. 41 is a diagram showing a conventional beam processing method.

[Explanation of symbols]

1 Energy Beam Source W Object to be Processed 3 Support Device 4, 50 to 66, 68, 70, 80, 83, 86, 8
9, 93 Shield 5 Grasping device 6 Workpiece moving device 7 Shield moving device 8, 9 Translation stage 11 Rotation stage 12, 13, 14 Translation stage 17 Fine movement mechanism 18 Rotation support device 19, 33, 36, 37, 39 Ridge 20 Film formation 22 Vacuum container

Front page continuation (51) Int.Cl. ⁷ Identification code FI H05H 3/02 H05H 3/02 (72) Inventor Takao Kato 4-2-1 Motofujisawa, Fujisawa City, Kanagawa Prefecture Ebara Research Institute, Inc. (72 ) Inventor Yotaro Hatamura 2-12-11 Kohinata, Bunkyo-ku, Tokyo (72) Inventor Masayuki Nakao 4-272 Shin-Matsudo, Matsudo-shi, Chiba D-805 (56) Reference JP-A-6-264272 (JP, A) Kaihei 7-68389 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) B23K 26/00-26/42

Claims (15)

(57) [Claims] 1. A method of irradiating an object to be processed with an energy beam generated from an energy beam source through a shield to process the object, wherein the shield is an elastic body, and the object is the object to be processed. On the surface of
Second place-decided tanning, processing method by the energy beam, characterized in that a pattern with the said shield performs processing so as to transfer to the object to be processed on the surface. 2. The shield is a film-like shield having elasticity.
The energy beam according to claim 1, wherein
Processing method. 3. A through hole is formed in the rod by the above treatment.
The energy bee according to claim 1, wherein
Processing method. 4. The object to be processed has a curved surface, and a shield is attached along the curved surface.
The method for treating with an energy beam according to any one of 1. 5. Energy produced by an energy beam source
Irradiate the object to be processed through the shield with the gee beam and
A method of processing, Pattern part used by the above-mentioned shield as a shield pattern
And a base portion, and is subjected to a treatment for miniaturizing the pattern portion.
After that, the pattern of the shield is applied to the surface of the object to be processed.
Energy that is processed so that it is transferred onto
Gee beam treatment method. 6. The miniaturizing process is carried out in the pattern.
Performing isotropic processing by supplying reactive gas to the surface
With the energy beam according to claim 5,
Processing method. 7. The thickness of the pattern portion is the thickness of the base portion.
It is thin with respect to the height.
The method of treatment with the described energy beam. 8. Energy produced by an energy beam source
Irradiate the object to be processed through the shield with the gee beam and
A method of processing, Use the edges of both ends of the shield to hold the shield.
Pattern is transferred onto the surface of the object to be processed.
Energy beam treatment method characterized by performing
Law. 9. In the motion of translating the shield
Then, by resting it multiple times,
9. The energy according to claim 8, wherein the energy treatment is performed.
Gee beam treatment method. 10. The process, et etching or deposition,
The method for treating with an energy beam according to any one of claims 1 to 9, wherein 11. The method according to claim 1, wherein a shield is attached over the multiple surfaces of the object to be processed, and the multiple surfaces are irradiated with a beam simultaneously or sequentially to perform the processing .
The method for processing with an energy beam according to any one of claims. 12. 請 Motomeko 1 you and performing pattern processing in the direction of different planes of the process is moved relative to the beam source as integrally shield with an object to be processed object to be processed
12. The method for treating with an energy beam according to any one of 1 to 11 . The method according to claim 13 wherein said treatment, the shield repeatedly performed from relatively moving with respect to the object to be processed, claims 1 and performs a process was transferred by superimposing a pattern of shield 12 The method for treating with an energy beam according to any one of 1. 14. The energy beam is any one of a high-speed atomic beam, an ion beam, an electron beam, a laser, a radiation, an X-ray, an atomic beam and a molecular beam, according to any one of claims 1 to 13 . The method of treatment with an energy beam according to. 15. An energy beam source, a workpiece support placed at an irradiation position of an energy beam emitted from the energy beam source, a plurality of shields, and at least one of the plurality of shields . And a support device that supports the other person so as to be movable relative to another person.