JP3312677B2 - Processing method and processing apparatus using energy beam - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for performing processes such as etching, film formation, bonding, and bonding on the surface of a workpiece by using an energy beam. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing method and a processing apparatus for projecting a pattern or a pattern hole shape in a reduced or enlarged shape on a workpiece surface by projecting with a convergent beam.

[0002]

2. Description of the Related Art Conventionally, when processing is performed using a photolithography technique in a semiconductor process, as shown in FIG. 15, a portion that is not processed is covered with a photoresist mask, and a portion that is not covered with photoresist is covered with a photoresist. Processing is performed by irradiating an ultraviolet beam or energy ions from plasma in a plasma process. The processing depth is controlled by controlling the processing time.

[0003] The photoresist fabrication and processing steps using photolithography used in this step will be further described. First, a resist material 2 is coated on a processing substrate 1 (step 1). Next, ultraviolet rays 4 are irradiated through the photomask 3 to transfer the pattern holes 3a formed in the photomask 3 to the resist material 2 (step 2). Next, by developing this, the resist material 2 at the portion irradiated with the ultraviolet light 4 through the pattern hole 3a is removed,
The surface of the processing substrate 1 is exposed (Step 3).

Next, ions and radical species in the plasma are applied to the exposed surface of the processing substrate 1 to perform anisotropic etching (Step 4), and finally, the resist material 2 is removed (Step 5). Through the above steps, fine processing of forming holes 1c having the same shape as the pattern holes 3a of the photomask on the surface of the processing substrate 1 is performed. This step is repeatedly performed in the process of manufacturing the semiconductor device.

[0005]

As described above, the conventional photolithography technique requires extremely complicated steps, is troublesome and costly, and has various problems caused by the formation of a film on the surface. Be restricted. For example,
It can be applied only to a substrate with good flatness, and it is very difficult to apply a photoresist with a fine pattern of 1 μm or less, and special equipment and devices are required.

Further, in the photolithography technique, in addition to the complexity of the operation, a photomask pattern must be prepared in advance, and if a different pattern is to be produced, another photomask pattern must be newly produced. This increases the cost and limits the degree of freedom in pattern production. Further, after the processing process, it is necessary to remove the residual photoresist, and it has been very difficult to perform this without affecting the processed surface. For example, in ashing, there is a possibility that the processed surface may be damaged, and the removal by the solution also causes contamination of the processed surface and deterioration of the processed shape.

In the case of using a plasma process, which is conventionally used as a processing method, flat processing of a processing bottom surface and processing of poor verticality of a processing side wall are performed. this is,
That the incident direction of ions varies, that the charge accumulates in the ultra-small region and that the charge-up occurs, and that the variation in the incident direction of the charged particles is further worsened; For reasons such as. In particular, in ultra-fine processing of 1 μm or less, processing with high accuracy was difficult.

Further, only a limited material such as an ultraviolet-sensitive material can be used as a material for the photoresist. In addition, the surface condition of the workpiece has limitations such as flatness and uniformity of reflectance to ultraviolet rays. In addition, in such a photoresist mask, since it is limited to film formation on the material surface,
The processing is limited to the dimensions of the photoresist pattern to be formed. According to the present invention, with a simple working process and apparatus configuration, processing with a high degree of freedom in pattern production can be performed with high accuracy,
In particular, it is an object of the present invention to provide a processing method and apparatus capable of exhibiting such an effect in processing in an ultra-fine area increasingly required in various fields.

[0009]

According to the first aspect of the present invention, there is provided a method of processing a workpiece by irradiating the workpiece with an energy beam generated from an energy beam source via a shield. As a beam, a convergent energy beam capable of performing any of etching, film formation, bonding, and bonding on a workpiece is used, and the beam is placed upstream of the convergent point of the convergent beam. This is a processing method using an energy beam, which performs processing for reducing the pattern of the shielding object on the surface of the workpiece. In the invention according to claim 2, the energy beam is a fast atom beam, an ion beam, an electron beam, radiation,
The processing method using an energy beam according to claim 1, wherein the processing method is any one of an X-ray, an atomic beam, and a molecular beam. The invention according to claim 3 is the processing method using an energy beam according to claim 1 or 2, wherein the processing is performed while controlling a distance between the shield and the workpiece.

According to a fourth aspect of the present invention, the above-described processing is repeatedly performed after the shield is moved relative to the workpiece, and the energy beam is repeatedly used. It is a processing method. At this time, a minute moving mechanism may be provided to perform a minute relative movement, thereby forming a step. Alternatively, beam irradiation may be performed while sequentially moving one shield, and one pattern may be repeatedly formed. On SL processing it may be performed repeatedly after replacing the shield.

[0011] but it may also be irradiated with focused energy beam while relatively moving the shield to the workpiece.
Here, the minimum shape of the shield is, for example, 0.1 nm.
〜１０10 nm or 10 nm〜100 nm or 10
It is 0 nm to 10 μm.

According to a fifth aspect of the present invention, a convergent energy beam source capable of performing any one of etching, film formation, bonding, and bonding on a workpiece, and radiation from the energy beam source A work support placed at the irradiation position of the focused convergence energy beam, a shield having a predetermined pattern, and at least one of the shield and the work supported to be relatively movable with respect to another person. Having a support device, and a convergence point of the convergent energy beam.
An energy beam processing apparatus for processing a pattern for reducing the pattern of the shield on the surface of a workpiece placed on an upstream side . Here, a mechanism for rotating and moving the shield with respect to the workpiece may be provided. Further, a mechanism for translating the shield with respect to the workpiece may be provided. Further, a mechanism for rotating the workpiece with respect to the shield may be provided.

[0013] These methods and / or equipment, Ru member having a quantum effect device and the friction force and / or the conductance reduction effect is created.

[0014]

According to the first aspect of the present invention, the surface of the workpiece is shielded by a convergent energy beam capable of performing any one of etching, film formation, bonding, and bonding on the workpiece. pattern of things is projected to shrink to so that, thereby, the processing is adapted to transfer to shrink the pattern of shield. By using a convergent beam, particularly, fine processing can be performed with high accuracy, and good processing of flatness and a processed surface state can be realized. The shield is usually formed separately from the workpiece, positioned at a position distant from the surface of the workpiece, and irradiated with a convergent energy beam to the workpiece via the shield.

The reduction ratio is determined by the convergence angle of the convergent beam and the distance between the shield and the workpiece. If beam of constant convergence angle, by changing the relative position by using the relative position control mechanism of the shield and the workpiece, it is possible to control the yield shrinkage ratio. When contracting, the workpiece is placed upstream of the convergence point of the convergent beam. Since the shield is a separate object, it is possible to irradiate the beam on any surface and any place of the workpiece,
A three-dimensional structure can be manufactured by multi-sided processing of a workpiece.

By changing the type of the energy beam, any one of etching, film formation, bonding and bonding is performed. The gas used is chemically reactive with the surface of the workpiece, causing an etching reaction, and sometimes forming a film.By controlling the type of beam or gas used for processing and the excited state of the gas, Processing such as etching and film formation becomes possible. In addition, it is also possible to join or bond a plurality of minute objects. In the joining / adhesion, for example, a film of a joining material such as gold or silver is formed on a joining surface or place, and after assembly, For example, it is possible to perform fusion bonding by heating, or to perform local film formation at a contact portion or a boundary portion between objects to perform fixing. According to the third aspect of the present invention, the reduction ratio can be controlled by changing the distance between the shield and the workpiece.

In the invention according to the fourth aspect, by repeating the processing after moving the shielding object relative to the workpiece, the processing in which the patterns are overlapped or the other surface of the workpiece is processed. processing dividing line in a simple process. here,
By performing irradiation from replace the shield having different patterns, Ru performed machining superimposed different patterns.

According to the second aspect of the present invention, a convergent energy beam having good linearity and directivity by processing an energy beam generated by an energy beam source.
It is used. In the processing using such an energy beam, variations in the energy beam are small and the processing proceeds selectively, so that ultrafine processing can be performed according to a pattern of controlling the position and the moving speed of the shield. By using an energy beam having good directivity in this way, the beam also reaches a narrow processing location, and ultra-fine processing with a high aspect ratio, which has been difficult in a plasma process, can be performed. That is, it is possible to realize a vertical etching side wall and a smooth and flat etching bottom surface. In particular, 1μ
In a processing region having a pattern smaller than m, it is difficult in the conventional plasma process because of variations in the incident direction of ions, but in the present invention, since the energy beam has good directivity and straightness, the shielding Regardless of the distance between the workpiece and the surface of the workpiece, the workpiece can be processed with high accuracy even in a close contact state or in a separated state.

The fast atomic beam is a neutral energy particle beam and a beam having a very excellent directivity, so that it can be applied to all kinds of materials. Since the beam can reach the gap without any difficulty, it is possible to realize a highly accurate processing bottom surface and a vertical processing wall with good flatness. The ion beam is effective when processing a conductive material such as a metal. In processing using an electron beam, the electron beam itself may be a beam radiated in a shower shape or a beam with a single small beam diameter.In both cases, a reactive gas is introduced and the It has a mechanism for irradiating an electron beam to excite a reactive gas and progressing surface processing, and has excellent electron beam irradiation controllability.

Lasers, synchrotron radiation, and X-rays have different energies and wavelengths and different interaction effects with the surface. However, when performing ultra-fine processing, surface desorption by laser, synchrotron radiation, and X-ray irradiation only Is performed, the surface-adsorbed gas particles are irradiated with a laser, a radiation light, or an X-ray using a reactive gas, and the surface desorption process is performed by the surface-adsorbed gas particles excited by the irradiation. Laser, radiation, and X-ray are different in terms of the processing pattern dimensions, the processing surface, and the effect of absorption and excitation with the reactive gas particles. When the dimensions become an ultrafine pattern, for example, it becomes difficult to process a pattern shape smaller than the wavelength of the laser, so that X-rays and radiation light with shorter wavelengths are used. In addition, atom and molecular beams are low-energy particle beams, and low-damage and soft processing on a processing surface can be achieved. In this way, depending on the processing purpose,
Select and use a suitable energy beam source.

[0021] The minimum unit shape of those said shield, 0.1 nm to
10 nm or 10 nm to 100 nm or 100
The thickness is preferably from 10 nm to 10 μm, and a transfer process having a further reduced size may be performed on the workpiece. According to the fifth aspect of the present invention, unlike a plasma process used in a conventional semiconductor process, it is possible to irradiate a beam on an arbitrary surface and an arbitrary place of a workpiece, and to perform three-dimensional processing of the workpiece by multi-face processing. A three-dimensional structure can be manufactured. Ma
Was, by performing high processing accuracy by using a device of the above method of claims 1 to 4 and / or claim 5, the quantum effect device is fabricated with high performance. As the quantum effect element, GaAs / AlGaAs / InGaAs of the 3-5 group is used.
For example, s or the like or a Si-based semiconductor material is used.

[0022] Using the apparatus above Symbol method of claims 1 to 4 and / or claim 5 received a high precision machining, members having the frictional force and / or the conductance reduction effect with high performance is manufactured. As a result, a special effect is expected with respect to a surface where two or more objects relatively move and the surface of the object rubs or rolls. That is, when the ultra-fine pattern processing of the object surface according to the present invention is performed, a processed surface with ultra-fine irregularities on the surface with a uniform depth, a vertical processed wall, and good flatness is realized. In addition, the frictional force generated when the ultrafine processed object surface comes into contact with another object surface and rubs with each other can be greatly reduced. This is because the static and dynamic friction coefficients are reduced by reducing the contact area, and there is an escape pocket for debris generated when rubbed, so that dirt and rubbing debris do not penetrate the rubbing surface, and the frictional force can be reduced.

Taking advantage of these characteristics,
It is possible to manufacture devices that can operate with low frictional force. As a device that effectively reduces friction on the contact surface of the rotating body, it is very effective in a contact mechanism such as an optical / magnetic disk, a disk head, and a magnetic tape recording / reproducing head. Since a low friction operation can be performed as compared with the related art, the durability of the head, the magnetic tape, the magnetic disk, and the optical disk is improved. For example, a thinner and lighter magnetic disk or a magnetic tape having a large recording capacity can be manufactured. Further, when achieving a large recording capacity with an ultra-small and lightweight head, sticking due to frictional force becomes a major problem, but this problem can be solved. Similarly,
The same can be said for the contact surfaces of the rotary bearing and the slide bearing. By applying pattern processing such as ultra-fine processing holes or grooves to the contact part of the rotating bearing or sliding bearing,
Friction force can be reduced, and durability and bearing accuracy are improved.

Further, a high-precision and high-performance mechanism can be realized also as a fluid seal mechanism and a flow rate control mechanism. For example, compared to the conventional labyrinth seal, the processing of the ultra-fine groove is enabled, so that the number of steps of the groove can be increased, and a labyrinth seal mechanism which is much more compact than before can be realized. Also, instead of providing several steps of grooves as in the prior art, by providing ultra-small holes on the bearing side or on the shaft or both, the fluid sealing function can be realized by reducing the rotational frictional force and reducing the fluid conductance. In this method, an ultra-fine hole may be formed on the shaft or the bearing side, and the ultra-fine processing method according to the present invention can be used to perform the processing very easily. In addition, when high-precision shaft machining and bearing machining are performed, the bearing and the fluid seal can be simultaneously realized by one bearing mechanism by the above-described method. Conventionally, a rotary bearing and a labyrinth bearing have been used together.

[0025]

FIG. 1 shows an embodiment of a processing apparatus used in the processing method of the present invention. The apparatus includes an energy beam source 1 for generating a convergent energy beam B, and an energy beam source 1 at a position facing the energy beam source. A support device 3 for supporting the workpiece 2,
A gripping device 5 for gripping the shield 4 is provided at a position between the energy beam source 1 and the workpiece 2. The support device 3 is provided with a workpiece moving device 6 for finely or coarsely moving the workpiece 2, and the holding device 5 is provided with a shield moving device 7 for finely or coarsely moving the shield 4. .

The workpiece moving device 6 is a rotation / translation stage, which includes three translation mechanisms 8, 9, and 10 in X, Y, and Z directions, and a rotation mechanism about a Z axis. 1
1 are sequentially stacked and used. The shield moving device 7 includes a translational three-axis moving mechanism 12 in the X, Y, and Z directions,
13, 14 and a biaxial parallelism adjusting mechanism 15 used to adjust the parallelism between the surface of the workpiece 2 and the shield 4.

As shown in FIG. 2, in the installation part of the shield,
An ultra-precision moving mechanism 17 using a piezoelectric element 16 is installed. Here, the control of the moving speed of the fine movement in the translation direction is performed in the order of 0.1 nm to 50 nm using the piezoelectric element 16 and a reducing or expanding moving mechanism. Is possible. Ultra-precision fine movement moving mechanism 17 using this piezoelectric element 16
3 and 4 are shown in FIGS. As the direction of fine movement using the piezoelectric element, one having one to three axes is used.
4 shows an example of one axis, and FIG. 4 shows an example of a case of two axes.

FIG. 5 shows a device similar to that of FIG. 1, but a supporting device 3 for supporting the workpiece 2 is different. That is, it comprises three-axis translation mechanisms 8, 9, and 10 and a horizontal rotation mechanism 18 about one axis, and rotates the workpiece 2 about an axis perpendicular or oblique to the beam B axis. Is possible. The device 5 for gripping the workpiece 2 is the same as that shown in FIG.
The same is true for the case of an axis. In addition to driving the piezoelectric element, a fine movement moving mechanism using a magnetostrictive effect or a fluctuation effect is also used, and a moving distance control mechanism using a lever action is used according to the required moving distance.

FIG. 6 shows a basic embodiment of the processing method of the present invention. The shield 4 is made of an electroformed Ni mask 40 as shown in FIG. The minimum size of the pattern portion 41 to be formed is 10 μm. Here, a convergent fast atom beam as an energy beam,
That is, 1/1000 reduction projection processing is performed using a high-speed atomic beam that converges toward a fixed convergence point O. For example, assuming that the fast atomic beam B passing through the pattern portion 41 having a width of 10 μm has a beam convergence angle of 1 degree from the convergence point, the width 10 is set at a position L = about 286 μm from the convergence point.
A beam irradiated portion of nm is formed. Due to such a reduced projection effect of the convergent beam, a ridge 42 having a size of 1/1000 of the pattern 41 of the shield 4 is formed as shown in FIG.

Since the normal convergent beam B has its own aberration, the minute distance between the workpiece 2 and the shield 4 is adjusted to perform processing at a distance at which pattern processing of a desired size is achieved. To do. When the aberration of the convergent beam B is large, the amount of the irradiation beam is controlled by using the aberration in reverse, and ultra-fine processing is performed. Also in this case, the distance between the workpiece 2 and the shield 4 is an important factor. FIG.
7 shows a case where a film forming process is performed using the same Ni mask 40 as described above. Here, a radical beam of atoms (molecules) is used as the convergent beam B. For example, using a focused atom (molecule) beam using a methane-containing gas or a tungsten-containing gas such as WF _6, a film formation pattern 43 on the order of 10 nm is formed on one or more surfaces of the workpiece 2. .

FIG. 10 shows an example in which the shield 4 is made of a minute rod 44. Such a minute rod 44 is
It is formed integrally with a base (not shown) to facilitate handling. As in FIG. 6, by controlling the distance between the rod-shaped shield 44 and the workpiece 2, it is possible to form the protrusion 42 having a reduced size of the rod-shaped shield 44. FIGS. 11A and 11B show examples of a plurality of shields. In FIG. 11A, a plurality of ultrafine protrusions 42 are formed by irradiating a bar-shaped minute shield 44 arranged in parallel with an energy beam B such as a convergent high-speed atomic beam. In FIG. 11B, a mesh-like object obtained by combining a plurality of minute rod-shaped objects 44 is used as the shielding object 4, and the intersecting ridges 45 are formed.

FIG. 12 shows a projection projected on a plurality of surfaces of the workpiece 2 by means of the above-described method, for example, using a shield formed by a combination of an electroformed Ni pattern and a rod-shaped object. This is an example in which a ridge 45 is formed. As described above, by performing the reduced projection ultra-fine processing of the shield 4 on a plurality of surfaces of the workpiece 2 using the convergent energy beam, ultra-fine multi-plane / three-dimensional processing, which was conventionally difficult, can be performed. It can be realized, and it is very effective when manufacturing electronics, information communication, quantum effect devices, and frictional force reduction mechanisms.

FIG. 13 shows an example in which the shield 4 is made of a minute rod 44 as in FIG. 10, but here, the shield 4 is moved along the surface of the workpiece 2 while being moved. This is an example of irradiating a convergent beam to form a ridge 48 having curved surfaces 46 and 47 having two curvatures. Here, the base (not shown) of the minute rod 44 is gripped by the gripping device of FIG. 1 and is moved from end to end in the X direction by a fine movement mechanism or the like.

In this manner, if the shield 4 is moved at a constant speed in the X direction, the irradiation amount on the surface of the workpiece 2 becomes uniform over the entire surface, and the surface is simply flattened by etching. When the moving speed is changed, the shielding time is longer at a position lower than the average moving speed, and the processing amount is smaller than at other portions, so that a convex portion is formed. On the other hand, where the speed is higher than the average speed, the shielding time is short, and the processing amount is larger than other portions, so that the concave portion is formed. Also, a steep slope is formed when the speed change is increased, and a gentle slope is formed when the speed change is reduced. Further, a linear slope is formed when the moving object is moved at a constant speed change, and a curved surface is formed when the moving speed is changed. One curved surface 47 may be a flat surface as described above. In the above-described method, a plurality of ridges 48 can be formed by one fine rod 44 by repeating the movement in a fixed position / speed pattern.

FIG. 14 shows an example of a shield 4 having a structure in which a bar-shaped needle 50 is attached to a spherical object 49 in four directions and the spherical object 49 is supported. At this time, the center of the spherical object 49 and the rotation center of the workpiece 2 are on the central axis in the beam flight direction. When energy beam processing is performed under such conditions,
The projection of the spherical object 49 is formed by the reduction projection. Since the needle part 50 is rotating, the energy beam irradiation amount becomes uniform on the surface of the workpiece 2, and finally,
Reduction projection processing of only the shape of the spherical object 49 is performed. At this time, if the stationary time state is periodically formed by controlling the rotational movement of the workpiece 2, the reduced processing portion of the needle part 50 can also be achieved.

[0036]

As described above, according to the processing method or processing apparatus of the present invention, processing with a high degree of freedom in pattern production can be performed with high accuracy by a simple operation process and apparatus configuration. It is effectively used in the industrial field to improve processing efficiency and contribute to the production of highly accurate and highly reliable products. In particular, since the shrinking process can be performed without reducing the size of the shield itself, it is useful for processing ultra-fine areas that are increasingly required in a wide range of fields such as precision machinery, semiconductors and mechatronics, and new products with new functions There is great potential to open the way to step-by-step production.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an overall configuration of a processing apparatus using an energy beam according to an embodiment of the present invention.

FIG. 2 is a view showing a superfine movement mechanism.

FIG. 3 is a perspective view showing the superfine movement mechanism in further detail.

FIG. 4 is a perspective view showing an example of another ultrafine movement mechanism.

FIG. 5 is a schematic diagram showing an overall configuration of a processing apparatus using an energy beam according to a second embodiment of the present invention.

FIG. 6 is a schematic view showing one embodiment of the processing method of the present invention.

FIG. 7 is a view showing an embodiment of a shield used in the processing method of FIG. 6;

FIG. 8 is an embodiment of a workpiece processed by the method of FIG. 6;

FIG. 9 is an embodiment of a workpiece formed by the method of FIG. 6;

FIG. 10 is a view showing a processing method according to another embodiment of the present invention.

FIG. 11 is a view showing still another processing method of the present invention.

FIG. 12 is a view showing a workpiece manufactured by the processing method of FIG. 11;

FIG. 13 is a view showing a processing method according to another embodiment of the present invention.

FIG. 14 is a view showing still another processing method of the present invention. It is a figure which shows the example of the processing method using the shielding object of FIG.

FIG. 15 is a view showing a conventional beam processing method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Energy beam source 2 Workpiece 3 Support device 4 Shield 5 Grasping device 6 Workpiece movement device 7 Shield movement device 8, 9 Translation stage 11 Rotation stage 12, 13, 14 Translation stage 17 Fine movement mechanism 18 Rotation support device

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-8-77957 (JP, A) JP-A-7-68389 (JP, A) JP-A-7-1172 (JP, A) JP-A-6-79 79488 (JP, A) JP-A-61-78122 (JP, A) JP-A-64-14922 (JP, A) JP-A-56-169992 (JP, U) JP-B-53-10937 (JP, B2) (58) Field surveyed (Int.Cl. ⁷ , DB name) B23K 26/06 B23K 15/00 G21K 5/04 H05H 3/02

Claims (5)

(57) [Claims] 1. A method for processing a workpiece by irradiating the workpiece with an energy beam generated from an energy beam source via a shield, and etching and forming a film on the workpiece as the energy beam. Using a convergent energy beam that can perform either bonding or bonding, reducing the pattern of the shield on the surface of the workpiece placed upstream of the convergence point of the convergent beam A processing method using an energy beam, wherein a pattern to be processed is processed. 2. The method according to claim 1, wherein the energy beam is a fast atom beam,
The processing method using an energy beam according to claim 1, wherein the processing method is any one of an ion beam, an electron beam, a radiation, an X-ray, an atomic beam, and a molecular beam. 3. The processing method using an energy beam according to claim 1, wherein the processing is performed while controlling a distance between the shield and the workpiece. 4. The processing method using an energy beam according to claim 1, wherein the processing is repeated after the shield is moved relative to the workpiece. 5. A convergent energy beam source capable of performing any one of etching, film formation, bonding and bonding on a workpiece, and irradiation of a convergent energy beam emitted from the energy beam source A workpiece support pedestal arranged at a position, a shield having a predetermined pattern, and a support device for supporting at least one of the shield and the workpiece so as to be relatively movable with respect to another, Placed upstream of the convergence point of the convergent energy beam
Machining apparatus according to the energy beam, characterized in that for machining of the pattern to reduce the pattern of the shield on the surface of the workpiece was.