JP4886984B2 - Electron beam drawing device - Google Patents

Description

  The present invention relates to an electron beam drawing apparatus, and more particularly to an electron beam drawing apparatus that can stably produce an ultrafine pattern.

  The progress of IT society is accelerating. In order to cope with this, there is a demand for development of technology for recording a huge amount of information in the industry. The road map is set with a target of 50 GB to 100 GB as the optical disc medium capacity following the Blue-ray disc (25 GB / plane) released in 2003. As the recording pits become finer, multi-value recording is being promoted. For that purpose, it is essential to realize a recording pit diameter of 200 nm or less. In addition, the beam diameter required for writing / reading is indispensable around 100 nm. However, with the current technology, even if a blue laser (wavelength 400 nm) and a high NA (NA: 0.95) are used, the beam diameter is 250 nm, and it is difficult to further increase the density.

On the other hand, in the recording system of 100 GB / in ² developed in the nanometer-controlled optical disc system project commissioned by the Ministry of International Trade and Industry's High Energy Development Organization (NEDO), multi-value information of 8 bits is given to one mark. In this case, a very fine exposure technique with a mark-to-mark distance of 380 nm and a track interval of 140 nm is required. In addition, it is essential for edge modulation recording that the accuracy of the pit length is 1 nm or less. Furthermore, a significant improvement in blanking performance is premised on a comprehensive technological development for pit shape generation.

  In addition, it is generally known that there are various obstacles in stably producing a target fine pattern. Assuming that the area of the pattern region is constant, it is clear that high-speed exposure of 100 times or more compared to the semiconductor field is essential in terms of production technology. That is, an electron beam bundle having a high current density that is narrowed to several tens of nm or less must be used.

  Furthermore, in the electron beam exposure region with a large current exceeding the irradiation current of 10 nA, the repulsion between electrons, that is, the Coulomb effect becomes a problem. This condition is known to cause rapid beam diffusion from the electron beam beam est. When the irradiation current is 1 nA, a depth of focus of about ± 5 μm is expected, but when the current becomes large, only a submicron or less can be expected as shown in FIG. That is, the area beyond the limit of the conventional focus control method must be targeted.

  As described above, in the current situation where significant innovation of the electron beam optical system cannot be expected, a new mechanism for reducing the amount of surface deflection during high-speed rotation of the workpiece has to be studied.

Therefore, a method for suppressing the surface runout to the limit will be examined. The target was 1 μm or less.
1) Provision of workpieces with good flatness. (Sleigh correction)
2) Examination of new high frequency surface runout prevention method at the time of equipment setting (released from external force caused by workpiece fixation).
3) Study the work positioning method to minimize the rotational moment.
4) Examination of vibration damping method at actual rotation frequency.

As a result of studying from the above four viewpoints, the vertical motion of the work surface is mainly 25 μm or more when the surface of the rotary table has a radius of 60 mm, and pitching and yawing due to the machining accuracy and assembly accuracy of the linear motion stage. Is 5 μm / 100 mm or more. Further, the surface runout caused by the flatness and parallelism of the workpiece is 10 μm or more for a 5 mm wafer.
As a countermeasure against these obstruction factors, an optical height sensor is generally mounted on the outer surface of the sample chamber. That is, a method is known in which the processing surface height is measured and the information is reflected on a Z stage provided with a focus lens and a piezo element. However, under high-speed exposure conditions exceeding 1 m / s, the responsiveness cannot be followed even if the measurement performance is sufficient. As a measure of the required response, the basic rotation speed (rpm) to the third order wave must be considered. For example, when the linear velocity is 3 m / s, the radius is 20 mm and the speed is 3600 rpm (60 Hz). There is no piezoelectric element (usually about 70 Hz) that satisfies a stroke of 30 μm at 180 Hz. A focus lens system composed of an electromagnetic lens or an electrostatic lens has a limit of about 100 Hz.
As described above, assuming an electron beam having only a submicron order depth of focus, the conventional method cannot be used.

Here, the problem of the method of controlling the table height or the beam focal plane height by feeding back the surface shake amount and the limit at the time of high speed drawing will be described.
As one of the conventional examples, Patent Document 1 discloses a method in which the distance between the electron beam irradiation unit and the master surface is measured, and the master is driven in a direction perpendicular to the master surface so that the distance is constant, There has been proposed an optical disc master creation method in which a pattern of a plurality of tracks is drawn while the master is rotated once by deflecting in a radial direction and a rotational direction of the master rotating the line. Further, in Patent Document 2, in order to perform electron beam drawing on a glass substrate with high accuracy, the glass substrate is fixed to a holder while maintaining the flatness of the glass substrate, and an O-ring is disposed on the lower surface of the glass substrate to apply a pressing force. A method of generating it has been proposed. Further, according to Patent Document 3, it is possible to accurately irradiate a predetermined position of the master disk with an electron beam so that a plurality of tracks can be formed during one turn of the master disk when cutting the master disk. A control mechanism is provided so that the distance to the lens is constant, and the driving means incorporates a piezo element disposed between the rotary table and the master fixing jig.
Patent No. 3,323,182 JP 2003-045369 A JP 2001-307385 A

  However, according to these conventional examples, it is effective only in a low current region, that is, in a drawing speed of 0.1 m / s or less as in the semiconductor field, but in reality, the surface runout due to the rotary table and the work is caused. Avoidance is difficult, and a surface shake measurement unit is provided as a general example as a countermeasure for maintaining the just-focus state at all times. The total surface runout amount of the workpiece surface is about ± 30 μm in the diameter range of 200 mm. On the other hand, the depth of focus of the electron beam is determined by its current value and acceleration voltage. For example, if the irradiation current Ip = 1 nA when the acceleration voltage is 50 KV, the result is that the depth of focus of the electron beam is ± 10 μm. However, in the large current region of 10 nA to 100 nA, since the current density is extremely high, the mutual Coulomb effect becomes remarkable, and there is a sudden beam spreading phenomenon immediately after passing through the beam focal point. In this case, the depth of focus is ± 1 μm or less. However, this value indicates that the correction limit of the electromagnetic lens or electrostatic lens is exceeded. The semiconductor drawing speed is on the order of 0.05 m / s, while the linear velocity required for large-capacity large-area exposure of an optical disk or the like is 1 m / s or more. The correction time response requires 20 times or more and the control resolution needs to be 1/10 times. Also, in general, drawing with an electron beam is performed by changing the focal position of the objective lens to automatically focus the electron beam. Therefore, when the electron beam is deflected, the position where the electron beam hits the master is the desired position. The problem of deviating from occurs.

  The present invention is for solving these problems, and provides an electron beam drawing apparatus that can control the amount of surface deflection for each workpiece, can obtain stable exposure quality even under high-speed exposure conditions, and has high reliability. The purpose is to do.

In order to solve the above problems, the electron beam drawing apparatus of the present invention controls the surface shake amount of the master disk to an arbitrary value when drawing a desired pattern with the electron beam on the rotating exposure master disk. Then, after determining the center of gravity position of the master in the preceding stage of the start exposure light, a mechanism member for placing the master on the table surface, provided to control the surface deflection amount during rotation in a non-contact state stress field generated A member, and a control member that detects an amount of surface deflection and controls increase / decrease of the stress field by the stress field generating member . In the electron beam drawing apparatus of the present invention, the stress field generating member is a member that is installed opposite to the front and back of the master and generates a gradient electrostatic field having a potential gradient. Therefore, by adopting an electrostatic field that does not use Coulomb force, control becomes easy with a simple structure.

In addition, the stress field generating member can take into account the resonance frequency for each workpiece by performing adjustment of the surface shake amount by the control member in a vacuum environment and an arbitrary frequency obtained by dividing the actual exposure rotation frequency of the master by an integer. Ru can provide an electron beam drawing apparatus having a high surface runout suppression function reliable.

Further, mechanism member, workpiece stage via the installed sphere surface seat to the rotating body is coupled by fitting hole provided in Nobutsu table and drive projection member of the installed tapered rotating body By transmitting the driving force in the rotation direction, the degree of freedom of movement of the workpiece can be secured, and a vibration damping effect can be obtained.

Further, when the stress field generating member is installed at only one place, the stress field generating member is installed at an arbitrary position on a straight line connecting the workpiece center and the electron beam irradiation point. Therefore, the surface shake at the exposure position can be suppressed, and a stable pattern quality can be obtained.

According to the electron beam lithography apparatus of the present invention , control is facilitated with a simple structure by employing an electrostatic field that does not use Coulomb force, and stable exposure quality can be ensured even under high-speed exposure conditions.

  FIG. 1 is a perspective view showing the external appearance of an optical disk master exposure apparatus to which the present invention is applied. In the figure, the control unit 10 includes an electron gun, an electron optical system, a rotary table, a linear motion stage (radial direction) controller and a feedback circuit (not shown). Although not shown, the housing 11 houses an electron optical system, an external magnetic field shielding structure member, and a vacuum exhaust system member. Although the gantry 12 is not shown in the drawing, a turbotable motor and a laser optical unit for detecting the position of the stage, such as a standing board having a vibration isolation mechanism, guide rails as various stages, and a spindle motor with built-in magnetic fluid are mounted. . Furthermore, the vacuum chamber which is a fine pattern processing zone is maintained in a high vacuum state. The master has a structure having an electron beam exposure resist film on the surface of the silicon wafer. A rotary table is coupled to a high-precision spindle motor to drive the master. A rotary stage including a high-precision spindle motor and a rotary table is placed on a linear motion stage, and a spiral pattern is formed on the master by moving at a desired speed in the radial direction of the master by the linear motion stage. If this principle is applied, a plurality of concentric patterns having a high precision pitch can be formed. While responding to the rotation and radial movement of the master, an electron beam is irradiated with a desired timing and size by an electron optical system inside the electronic housing. Inside the electronic casing, on / off of the electron beam is controlled by the blanking unit. Further, the radial position error is corrected by the deflection electrode due to the linear motion stage.

  FIG. 2 is a schematic sectional view showing the configuration of an electron beam lithography apparatus to which the present invention is applied. The electron beam drawing apparatus 20 shown in the figure mainly includes an electron optical system and an X-θ drive system for forming a spiral pattern on a workpiece. In the figure, an electron beam obtained by field emission from the electron gun 21 is narrowed by a condenser lens 23, and after passing through an aperture 24 provided with a fine hole (φ30 to 100 μm), a predetermined depth of focus is obtained by an objective lens 25. The workpiece reaches the work (EB resist / substrate) 27 placed on the turntable 28 with a beam diameter (10 to 100 nm). The energy held by the electron beam acts to cut the main chain of the polymer in the positive resist film. An exposed pattern whose molecular weight has been reduced by this action forms a target pattern due to dissolution and flow phenomenon by the developer. The pattern shape is mainly determined by various exposure parameters represented by the beam acceleration voltage (KV), irradiation current (nA), and beam diameter (nm). Among the parameters, the beam diameter is a dimension in a region generally called a beam est. The longer the traveling direction length of this region is, the exposure environment is more resistant to surface deflection of the work surface, that is, vertical fluctuation. In other words, it can be said that the beam has a deep focal depth. In the region where the irradiation current is several nA or less, the depth of focus is about ± 5 μm. However, when the current is large, the beam is extremely easy to spread due to the repulsive force between electrons, that is, the Coulomb effect. In general, it is known that even a configuration called a high-precision table fluctuates by about ± 30 μm in the optical axis direction (focus direction). Therefore, the present invention is to solve the problem that arises by this high current exposure.

  FIG. 3 is an explanatory diagram of the principle of detecting the height of the master 7 by the height sensor. The laser light introduced from the light projecting unit 31 into the vacuum chamber 32 is reflected by the surface of the master 33 and is incident on the light receiving position sensor 34 of the light receiving unit. When the surface height of the master 33 rises and falls due to surface vibration or the like, the light receiving position of the light receiving position sensor 34 changes according to the amount of change. The master surface height change can be obtained from this position change amount by geometric calculation. The light receiving position sensor 34 may use a PSD or a CCD. The more precisely the relative positional accuracy of the light projecting unit 31 and the light receiving position sensor 34 is managed, the better the detection accuracy. In this way, this height change amount is fed back to the focus control of the electron optical system. However, as the exposure speed increases, the responsiveness is required to be much faster than the practical range, and new ideas are required.

  Accordingly, the electron beam is irradiated while moving in the radial direction while rotating the master 27 in FIG. In the electron beam optical system, on / off of the beam is controlled by the blanking plate 22 of FIG. 2 in accordance with the pits to be formed. Further, a circuit for detecting a radial position error of the master disk 27 is provided, and the spot position is corrected by the deflection electrode 26 of FIG.

  However, in the height sensor detection method as described above, a phenomenon that the detection value fluctuates has been reported. This phenomenon is a phenomenon in which an offset is added to the output value of the light receiving position sensor 34. This correlates with fluctuations in atmospheric pressure. Further, as shown in FIG. 4A, a warp amount (= ΔH) of about 10 μm is unavoidable in an 8-inch size due to the influence of processing strain in a single-side polished silicon wafer or a glass substrate master 41. Therefore, as shown in FIG. 4 (b), a swell component is generated when an attempt is made to reduce the overall warpage by fixing by the fixing member 42 at the center of the master 41 in order to reduce the amount of warpage. This causes deformation with a high frequency and results in a bad condition for the control of the focus lens. In addition, after applying the resist, a baking process is performed at 200 ° C. for 30 minutes. In some cases, a new warp of about 20 μm may be added to a thin substrate due to the stress of the surface deflection of the resist film. Therefore, the correction of the surface shape by further local pressing results in promoting the high-frequency swell component.

  Therefore, as shown in FIG. 5, as a method of reducing the amount of warp without generating new undulation in the work, a method of forming an arbitrary thin film 52 on the back surface of the master 51 by sputtering or the like and utilizing the bimetal action is for the time being. Effective in principle. However, when the amount of warpage is not stable, it is not a stable method, but can be employed as an auxiliary means. For example, the initial warpage of 20 μm can be improved to about 3 μm. The representative brand ZEP520 (manufactured by Nippon Zeon Co., Ltd.), a positive resist for high sensitivity EB, requires a pre-bake treatment at 200 ° C. for 30 minutes in a clean oven after spin coating. Due to the curing shrinkage effect of the resist film and the difference in linear expansion between the substrate (silicon wafer or glass, etc.), a warp of 30 to 50 μm occurs in the φ8 inch size. This warp takes the shape of a treat in the center. In the optical height sensing method using laser light, the change in the inclination of the reflecting surface is too large, and the accuracy is extremely lowered. In addition, the operating range of the focus lens is generally about ± 20 μm. An increase in the substrate size is a major obstacle in terms of focus control. Therefore, a double-sided resist coating method and a backing method that corrects deformation by bonding a rigid plate on the back side were performed, and good results were obtained.

  FIG. 6 is a schematic diagram of an electron beam profile near the objective lens. If the electron beam current is sufficiently small and the interaction between the individual electrons constituting it is negligible, it is easy to handle in terms of electromagnetic field theory, and it can be decomposed into a paraxial trajectory and various aberrations with respect to the reference trajectory. Easy. However, the following phenomenon occurs in the region of several nA to several hundreds of nA targeted by the present invention. As shown in FIG. 6A, due to the Boersch effect, the energy distribution is abnormally broader than when starting from the cathode. Further, as shown in FIG. 6B, the Loeffler effect increases the beam diameter as compared with the calculated value in the continuous fluid approximation, thereby widening the current density. An example of actual measurement is shown in FIG. Note that the horizontal axis of the characteristic diagram of FIG. 5 represents the position where the beam diameter is minimum as the origin, and the amount of deviation (direction along the electron beam traveling axis: Z direction) is expressed as the Z shift amount. The solid line shows the case of a small current density, and a beam diameter of 10 nm or less is obtained when the Z shift is ± 5 μm. On the other hand, it can be seen that the large current density indicated by the one-dot chain line and the dotted line spreads rapidly several tens of times. As can be seen from this characteristic, the displacement in the height direction of the workpiece, that is, the runout due to rotation must be about 1 micron or less. Low-frequency surface vibration (warping component) can be tracked by a conventional height sensor correction method. However, the response performance of the focus lens is difficult to follow for high frequency components (up to three times the rotation frequency).

  FIG. 8 is a characteristic diagram showing the amount of surface runout with respect to the radial position in the workpiece. In the figure, the solid line indicates the amount of surface deflection at each position. The alternate long and short dash line is a gentle warping component. When a local swell component is added to the warp component, solid lines A to D are obtained. Further, as shown in FIG. 9, various patterns are engraved at the points A, B, C, and D in FIG. 8 by the beam defocusing action. The point A is in a just-focus state, and the points B and C are slightly shifted, so that there is a sag in the shoulder portion of the pattern. Further, at point D, the pattern shape has no bottom due to insufficient exposure dose.

  Next, the basic principle of the present invention will be described with reference to FIGS. 10 and 11. Since air resistance does not act in a vacuum environment, as shown in FIG. And a moment force component generated by a deviation (δL in the figure) from the position of the center of gravity, a centrifugal force component of the workpiece as shown in FIG. 11, and a surface runout component due to eccentricity caused by tilting of the table rotation shaft. That is, according to the present invention, the workpiece is fixed at a point as close as possible to the position of the center of gravity in a static state. The centrifugal force component of the work is an action in which the work itself corrects the amount of warpage. The surface runout component is dealt with by adopting a structure in which the workpiece is released from the rotation axis collapse.

FIG. 12 is a schematic diagram showing a configuration of an electron beam drawing apparatus according to an embodiment of the present invention. In the electron beam lithography apparatus 100 according to the present embodiment shown in the same figure, the workpiece 200 is fixed by an electrostatic chuck 101 provided in a fixed case 102. Note that the upper surface of the fixed case 102 is inclined toward the outer periphery in order to reduce the contact area with the workpiece 200. A plurality of fitting holes 103 are provided at the bottom of the fixed case 102. A projecting member 104 for rotational driving is inserted into each fitting hole 103 in an unfixed state. The protruding member 104 has a conical shape, and has a structure in which linear pressure is always generated somewhere even when the fixed case 102 is inclined. And the rotational force of the rotating shaft 105 is transmitted via the arbitrary surfaces of the fixed case 102 and the protruding member 104. At the tip of the rotating shaft 105, there is a disk portion 106 that has been subjected to spherical seating. Further, a ball 107 made of alloy steel having good wear resistance is fitted into a spherical seat provided in the disk part 106, and rotates together with the disk part 106 via an outer ring 108 and a pin 109. A vacuum type silicon-based lubricant is applied to the surface of the ball 107. In addition, an electrostatic field forming member 110 is disposed in the vicinity of the outer peripheral end of the workpiece 200 so as to oppose the workpiece 200 with a predetermined forcing force applied. The pair of electrostatic field forming members 110 may be provided at a plurality of locations, but when installed at only one location, the electrostatic field forming members 110 may be installed at arbitrary positions on a straight line connecting the center of the workpiece 200 and the electron beam irradiation point. desirable. The rotating body is generally expected to have a natural resonance frequency up to three times the fundamental frequency. The surface shake phenomenon of the workpiece 200 is attenuated by the gradient electrostatic field of the electrostatic field forming member 110. The surface shake adjustment is continued until the focus lens reaches a value (acceleration [mu] m / sec < ² >, PP displacement [mu] m) from the low-speed rotation state to the high-speed rotation range before the exposure starts. The low-speed rotation speed is 1/3 of the actual exposure rotation speed.

  Here, in the present embodiment, it is assumed that the workpiece 200 is fixed to the electrostatic chuck 101 of FIG. As can be seen from the principle diagram shown in FIG. 13, the position of the center of gravity of the workpiece is obtained while pushing the three outer peripheral surfaces of the workpiece in a point contact state. In addition, as shown in FIG. 14, confirmation of arrival at the position of the center of gravity is performed by the gap sensor 121. The gap sensor 121 is arranged at three locations and forms a reference plane. Adjustment is continued until the distance from each gap sensor 121 becomes equal. During this adjustment, the workpiece 200 is only supported by the center pin 122 of FIG. 14, that is, it is not fixed. The center pin 122 is provided with a flange and is supported by a compression spring 123. When the position of the workpiece 200 is determined, the workpiece 200 is lowered by an electrostatic attraction force and is fixed to the rotary table by turning on the electrostatic chuck 12. The steps shown in FIGS. 13 and 14 are performed in the load lock chamber 13 of FIG. 1 under an atmospheric environment. After setting the load lock chamber 13 to a vacuum state, the partition wall is opened and the workpiece 200 is carried into the exposure zone. In the exposure zone, as shown in FIG. 12, the workpiece 200 is rotated at a low speed, and the electrostatic field of the three pairs of electrostatic field forming members 110 is finely adjusted. Form a state. After that, the process shifts to a high-speed rotation mode, and blanking is turned off to start exposure by irradiating with an electron beam. Therefore, in the present invention, since the work surface height has a structure defined by the reference surface of the gap sensor 121, there is no need to adopt the conventional height sensor method. The warping component of the workpiece is almost eliminated by centrifugal force. As for the number of the electrostatic field forming members 110, it is more preferable to apply external force in multiple stages in terms of attenuation efficiency. However, there is an effect even at only one place, and in this case, the condition that the electrostatic field forming member 110 is installed at an arbitrary position on a straight line connecting the workpiece center and the electron beam irradiation point (fixed) is more preferable.

  FIG. 15 is an explanatory diagram illustrating the centering method. The conventional support base fixing system shown in FIG. In this method, the center of gravity of the workpiece 200 is brought closer to the fixed support base one by one while pushing or scooping the outer end so that the reaction force at the support by the three mounting outer peripheral pins 151 to 153 becomes equal. It is a method. In this method, an independent movable mechanism is required on the outer peripheral portion of the work, which tends to be large in terms of space and control. Therefore, as shown in FIG. 5B, the outer end is lightly fixed in advance by fixed support members 154 to 156, and a support base 158 is installed on a member in which the piezo elements 157 are stacked so as to be movable in three axes. did. In order to make the reaction force at the mounting outer peripheral pins 151 to 153 equal, the expansion and contraction of the XY piezo element 157 is automatically repeated to coincide with the position of the center of gravity of the workpiece. In order to freely move the work surface to the focal position of the electron beam, the Z axis is provided to correspond to the thickness of the work. It was set as the structure conveyed to the exposure chamber in this state.

  FIG. 16 is a flowchart showing the overall operation of the present invention. The operation shown in the figure shows an overall routine combining the apparatus configuration of the present invention. Steps S101 and S102 are flows for determining the position of the center of gravity, and steps S103 to S107 are flows for assuming a vibration damping field due to the centrifugal force and electrostatic field of the workpiece itself in the vacuum chamber. First, the work is positioned on the pivot pin in the rotary table and the position is adjusted by the outer peripheral pin, and the center is set (step S101). And the inclination degree of a workpiece | work is measured with a displacement sensor (step S102). The measured workpiece inclination is compared with the target value, and if the workpiece inclination reaches the target value (step S103; YES), the electrostatic chuck built in the rotary table is turned on (step S104). Then, the X table is operated to move to the exposure origin position (step S105). The operation of the rotary table is started (step S106). Next, the electrostatic field unit arranged on the outer periphery of the work is operated to adjust the voltage (step S107). Then, the surface runout amount during rotation is measured by the work surface height displacement sensor (step S108). If the measured surface shake amount has reached the target value, exposure is started and an electron beam is irradiated to perform CLV driving (step S109). As a result, since there is no air resistance in a vacuum environment, the work piece is given a sufficient degree of freedom to reduce surface run-out while taking into account the rotational moment generated purely due to centrifugal force and deviation from the center of rotation. As a result, the design policy was utilized.

  The present invention is not limited to the above-described embodiments, and it goes without saying that various modifications and substitutions are possible as long as they are described within the scope of the claims.

It is a perspective view which shows the external appearance of the optical disk original recording exposure apparatus to which this invention is applied. It is a schematic sectional drawing which shows the structure of the electron beam drawing apparatus to which this invention is applied. It is explanatory drawing of the principle of the height detection of the original disk by a height sensor. It is a figure which shows the wave | undulation component by curvature and a fixing member by the influence of a process distortion. It is sectional drawing which shows the structure of the original disk which reduced the curvature amount, without generating a new wave | undulation in a workpiece | work. It is the figure which modeled the profile of the electron beam of the objective lens vicinity. It is a characteristic view of the electron beam diameter and Z shift amount at a small current density and a large current density. It is a characteristic view which shows the amount of surface runout with respect to the radial position in a workpiece | work. It is a figure which shows the various patterns by the defocus effect | action of the beam resulting from the surface shake amount with respect to a radial position. It is a figure explaining the basic principle of this invention. It is a figure explaining the basic principle of this invention. It is the schematic which shows the structure of the electron beam drawing apparatus which concerns on one embodiment of this invention. It is a figure explaining work center-of-gravity positioning. It is a schematic sectional drawing which shows the workpiece | work gap taking-out mechanism after workpiece | work center-of-gravity position setting. It is explanatory drawing which actualized the centering system. It is a flowchart which shows the whole operation | movement of this invention.

Explanation of symbols

100; Electron beam drawing apparatus; 101; Electrostatic chuck;
102; fixing case, 103; fitting hole, 104; projecting member,
105; rotating shaft, 106; disk portion, 107; ball,
108; outer ring, 109; pin, 110; electrostatic field forming member,
200; work.

Claims (4)

An electron beam drawing device that controls the surface deflection of the master to an arbitrary value when drawing a desired pattern with an electron beam on a rotating exposure master, and after determining the center of gravity of the master at the stage before the start of exposure, a mechanism member for placing the master on the table surface, and is provided to control the surface deflection amount during rotation in a non-contact state stress field generating member, the stress field due to the stress field generating member by detecting a surface vibration amount In an electron beam drawing apparatus having a control member for controlling the increase or decrease of
2. The electron beam drawing apparatus according to claim 1, wherein the stress field generating member is a member that is installed facing the front and back sides of the master and generates a gradient electrostatic field having a potential gradient . 2. The electron beam drawing according to claim 1, wherein the stress field generating member performs adjustment of the surface shake amount by the control member in a vacuum environment and at an arbitrary frequency obtained by dividing the actual exposure rotation frequency of the master by an integer. apparatus. The mechanism member, workpiece stage via the installed sphere surface seat to the rotating body is coupled, fitting holes provided in the drive projection member before described workpiece stage of the installed tapered to said rotating body The electron beam drawing apparatus according to claim 1, wherein a driving force in a rotational direction is transmitted by the method . When installing a prior SL stress field generating member only in one place, the claim 1, characterized in that placing said stress field generating member at an arbitrary position on a straight line connecting the irradiation point of the work center and the electron beam 4. The electron beam drawing apparatus according to any one of 3 above.

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