JP3591975B2 - Processing method using energy beam - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a processing method and a processing apparatus for processing an object surface using an energy beam, and in particular, the manufactured object includes a quantum effect element, an optical lens, a friction reducing mechanism, and a fluid seal. The present invention relates to a processing method and processing apparatus suitable for ultra-fine processing that can be applied to a mechanism or the like.
[0002]
[Prior art]
Conventionally, when processing using a photolithography technique in a semiconductor process, as shown in FIG. 47, a non-processed portion is covered with a photoresist mask, and an uncovered portion is covered with an ultraviolet beam or a plasma process. Is processed by irradiation with energetic ions. The processing depth is controlled by controlling the processing time.
[0003]
The photoresist production and processing steps using photolithography used in this step will be further described. First, the substrate 201 is coated with a resist material 202 (step 1). Next, ultraviolet rays 204 are irradiated through the photomask 203, and the pattern holes 203a formed in the photomask 203 are transferred to the resist material 202 (step 2). Next, by developing this, the portion of the resist material 202 irradiated with the ultraviolet ray 204 through the pattern hole 203a is removed, and the surface of the substrate 1 to be processed is exposed (step 3).
[0004]
Next, anisotropic etching is performed by causing ions or radical species in the plasma to act on the exposed surface of the substrate 201 to be processed (step 4), and finally the resist material 202 is removed (step 5). Through the above steps, a fine processing process is performed in which a hole 201c having the same shape as the pattern hole 203a of the photomask is formed on the surface of the substrate 201 to be processed. This process is repeated in the manufacturing process of the semiconductor device.
[0005]
[Problems to be solved by the invention]
In such a method based on a conventional photoresist pattern manufacturing process using photolithography technology, it is possible to perform processing that forms simple irregularities, but when processing curved surfaces and inclined surfaces, a plurality of patterns are used. It must be prepared and exchanged sequentially, and irradiation must be performed to form a curved surface step by step. This takes time and is difficult to perform with precision processing that can be used to fabricate fine quantum effect elements. there were.
[0006]
In addition, as described above, a resist pattern is prepared on the workpiece by the steps of resist coating, washing, exposure, baking and development, and energy particles are applied to the workpiece through this pattern to perform processing, and then the resist is removed. There is also a problem that a very complicated and time-consuming process is required and the manufacturing cost is high. In addition, it may be difficult to produce a uniform resist film due to surface roughness and flatness.
[0007]
Furthermore, in the photolithography technology, when removing the residual photoresist after the processing process, for example, ashing is used, the processing surface is damaged, and contamination by the processing surface or processing shape is also caused by removal with a solution. There is a drawback that the surface is affected, such as causing deterioration of the surface.
[0008]
Also, in the processing using the plasma process, the incident direction of ions varies, and since charges accumulate in the ultrafine region, the variation in the incident direction of charged particles is increased, especially in the ultrafine region. Legal processing characteristics become prominent. For these reasons, the processing bottom is flat and the processing side wall is not vertical. In particular, in ultra-fine processing of 1 μm or less, accurate processing becomes difficult.
[0009]
The present invention provides a method and an apparatus capable of processing a curved surface and a slope of an arbitrary pattern freely and accurately with a simple configuration with a high degree of freedom in pattern production. An object is to provide an excellent device.
[0010]
[Means for Solving the Problems]
BookinventionPreferred embodiment ofIs a processing method using an energy beam that irradiates a workpiece with an energy beam emitted from an energy beam source through a shield having a predetermined pattern, and processes the workpiece. Irradiating an energy beam while moving at least one of a workpiece and a workpiece relative to others to control the relative movement speed of the shielding object, thereby forming the required unevenness.thingIt is.
[0011]
Since the energy beam is irradiated while moving at least one of the energy beam source, the shield, and the workpiece relative to the other to control the beam irradiation time of the workpiece on the workpiece surface, the shield A processing pattern that is not confined to the above pattern can be obtained, and processing with different depths of protrusions and protrusions depending on the location can be performed. In addition, since the shielding object is a separate body, the pattern itself can be easily processed, a fine and complicated pattern can be formed, and it is not attached to the surface of the workpiece, so it is not restricted by the surface properties or shape. The pattern shape can be easily transferred.
[0012]
Also bookinventionPreferred embodiment ofIs a processing method using an energy beam that irradiates a workpiece with an energy beam emitted from an energy beam source through a shield having a predetermined pattern, and processes the workpiece. Irradiation with an energy beam while moving at least one of the workpiece and the workpiece relative to the other to control the beam irradiation time of the workpiece on the workpiece surface, thereby forming irregularities on the surface. The irradiation area of the energy beam is larger than the area of the shielding object forming the unevenness, and the unevenness is formed by movement of the edge of the shielding object.thingIt is. By continuously performing the relative movement, not only a simple uneven surface but also a complicated uneven surface having an inclined surface or a curved surface is processed using a simple process and apparatus.
[0013]
Also bookinventionPreferred embodiment ofIs a processing method using an energy beam that irradiates a workpiece with an energy beam emitted from an energy beam source through a shield having a predetermined pattern, and processes the workpiece. Irradiation with an energy beam while moving at least one of the workpiece and the workpiece relative to the other to control the beam irradiation time of the workpiece on the workpiece surface, thereby forming irregularities on the surface. The shielding object comprises a plurality of separate masks, and the unevenness is formed by combining the plurality of masks.thingIt is.
hereOne of the plurality of shielding objects is a moving mask, and the other is a fixed mask.May be.
[0014]
For example, when the shielding object is moved in a certain direction with respect to the workpiece while irradiating the beam, unevenness having an inclination corresponding to a change in the moving speed is formed along the moving direction. Therefore, complicated three-dimensional unevenness can be formed by a simple-shaped shield. Such a movement speed pattern is stored in a computer in the same manner as a conventional numerical control machine, so that an accurate and automated processing operation is performed.
[0015]
AlsoBoth of the plurality of shielding objects are moving masksYou may do.
Also bookinventionPreferred embodiment ofIs a processing method using an energy beam that irradiates a workpiece with an energy beam emitted from an energy beam source through a shield having a predetermined pattern, and processes the workpiece. A hole-shaped opening is provided, and the energy beam is irradiated after the shield and the workpiece are relatively moved to form a plurality of irregularities on the surface of the workpiece.thingIt is.
here, Continuously performing at least one relative movement of the energy beam source, the shield, and the workpiece to make the unevenness a smooth curved surface or a slope.Can also.
[0016]
AlsoThe irregularities are formed along a specific direction in which the shield moves.You may do.
AlsoThe above movement is a translational movement with respect to the direction crossing the beam.You may do.
[0017]
Also, The above movement is rotational movement with respect to the direction intersecting the beamMay be. In addition to the above movement, the workpiece may be rotated.
AlsoThe relative movement changes the angle of the energy beam relative to the workpiece.You may do.
AlsoThe relative movement is effected by a rotational movement of at least one of an energy beam source, a shield and a workpiece.You may do.
[0018]
Also, Control the beam dose by using the opening area distribution of the pattern formed on the shieldYou may do.
Moreover, you may make it the opening part area of the pattern of a shield distribute in the moving direction width direction. If the pattern of the shielding object is made different in the direction in which the opening area intersects the moving direction, the dose distribution is made in the width direction of movement, and irregularities are formed. By using a combination of the irradiation dose distribution in the width direction by this pattern and the irradiation dose distribution in the moving direction due to the speed change, a more complicated uneven pattern is formed.
[0019]
AlsoSelect a material for the shield that has a different reactivity from the workpieceYou may do it.Thereby, only the workpiece is reacted selectively so that the shape of the shielding object is maintained, the life of the shielding object is extended, and contamination due to the shielding object is prevented. Only the surface of the shield may be covered with such a material.
[0020]
Moreover, the dimension of the minimum part shape of the shield may be 0.1 nm to 10 nm, 10 nm to 100 nm, or 100 nm to 10 μm.
AlsoThe shield has a plurality of repeating patterns of the same shapeYou may do. As a result, a plurality of patterns are formed at the same time, the flexibility of design of the pattern to be processed and the degree of freedom of production are increased, and a more efficient ultrafine processing pattern is realized.
[0021]
Also bookinventionPreferred embodiment ofIncludes an energy beam source, a workpiece support placed at an irradiation position of the energy beam emitted from the energy beam source, a shield having a predetermined opening pattern, and the energy beam source, the shield and the workpiece. And a relative movement mechanism for forming irregularities on the surface of the workpiece by moving at least one of the objects relative to the other, and the relative movement mechanism controls the movement speed for forming the irregularities. It is possible tothingIt is.
hereThe relative movement mechanism can continuously move at least one of the energy beam source, the shielding object, and the workpiece relative to others to form the unevenness on a smooth curved surface or slope. It is characterized by becomingthingIt is.
[0022]
AlsoThe relative movement mechanism includes a movement mechanism that relatively moves at least one of the energy beam source, the shielding object, and the workpiece in a direction perpendicular to the beam flow with respect to the other person.You may do.
AlsoThe relative movement mechanism includes a movement mechanism that relatively moves at least one of the energy beam source, the shielding object, and the workpiece in a direction along the beam flow with respect to the other person.You may do. The positional relationship between the workpiece and the energy beam is arbitrarily controlled by the coarse movement and fine movement mechanisms.
[0023]
AlsoThe relative movement mechanism includes a movement mechanism that translates at least one of the energy beam source, the shield, and the workpiece.You may do.
AlsoThe relative movement mechanism includes a movement mechanism for rotating at least one of the energy beam source, the shielding object, and the workpiece.You may do.
AlsoThe shield is coated to reduce the reactivity to the energy beam.You may do.
[0024]
AlsoA plurality of identical patterns are repeatedly formed on the shield.You may do.
In addition, the moving mechanism may have a coarse movement and a fine movement mechanism.
AlsoThe fine movement mechanism includes a piezoelectric element driving mechanism, a magnetostrictive element driving mechanism, a thermal deformation element driving mechanism, or a combination of these and a lever mechanism.TheuseMay do. A piezoelectric element drive mechanism, a magnetostrictive element drive mechanism, a thermal deformation element drive mechanism, or a combination of these lever mechanisms is used, and a mechanism suitable for each purpose and condition is selected and exhibits its performance. To do.
[0025]
Also, Non-metallic materials such as carbon fiber, glass, quartz fiber, and polyethylene, and metals such as tungsten, SUS, and platinum should be used for the shield.Is preferred. Thereby, the material used for manufacture for a shield is selected according to the energy beam to be used, the size of a required pattern, and the like. Materials include glass, quartz, carbon fiber, tungsten, SUS, platinum, silver, aluminum and other metal wires and needles, Ni pattern by electroforming, metal pattern by wet etching, metal by beam processing, and Si / SiO ₂ There are semiconductor materials such as GaAs, insulating materials such as ceramics, resins, and plastics, patterns of composites and gradient materials, heat shrink patterns such as polyethylene and vinyl, and shields that use dispersion and adhesion of ultrafine particles.
[0026]
AlsoThe shield is a fine wire or fine particleMay be used. These shields can be manufactured by a simple manufacturing method and exhibit the required performance. These shields usually have a size of about 1 μm except for ultrafine particles, and in order to form a fine pattern, treatment using electropolishing, surface dissolution with a solution, heat shrinkage effect, etc. And used as a shield of an arbitrary ultra-fine dimension pattern.
AlsoThe mask is a pattern mask manufactured by electroforming.May be used.
[0027]
Also, Use one of high-speed atomic beam, ion beam, electron beam, laser, radiation, X-ray, atomic beam, molecular beam, or some combination of these as the energy beam sourceCan.
[0028]
By using an energy beam with good straightness and directivity by pre-processing, processing proceeds selectively and ultrafine processing according to the pattern of control of the position and moving speed of the shielding object becomes possible. . By using an energy beam with good directivity in this way, the beam reaches a narrow processing place, and processing that is extremely fine and has a high aspect ratio, which is difficult in the plasma process, can be performed.
[0029]
Fast atomic beam is a neutral energetic particle beam, and it is a beam with excellent directivity, so it can be applied to any material, and when creating ultrafine patterns, it can be applied to ultrafine holes and gaps. Since the beam can reach without difficulty, it is possible to produce a machined bottom surface or a vertical machined wall with very high precision and good flatness.
[0030]
The ion beam is effective when processing a conductive material such as metal. In processing using an electron beam, the electron beam itself may be a beam emitted in a shower form or a single beam with a small beam diameter. In both cases, a reactive gas is introduced to the workpiece. It has a mechanism that the reactive gas is excited when irradiated with an electron beam and the surface processing proceeds, and the electron beam irradiation controllability is excellent.
Lasers, radiation, and X-rays differ in energy and wavelength and have different interaction effects with the surface. However, when performing ultrafine processing, surface desorption processing is performed only by laser, radiation, and X-ray irradiation. Using reactive gas, the gas particles adsorbed on the surface are irradiated with laser, radiation or Xline, And surface desorption processing is performed by the surface adsorbed gas particles excited thereby.
[0031]
The use of laser, radiation, and X-rays is efficient because there are differences in the dimensions of the processing pattern, the processing surface, and the absorption excitation effect of the reactive gas particles. When the dimension becomes an ultrafine pattern, for example, since it becomes difficult to process a pattern shape smaller than the wavelength of the laser, X-rays or radiation having a shorter wavelength are used. Also, atoms and molecular beams are low energy particle beams, and soft processing is achieved with low damage on the processing surface. Thus, a suitable energy beam source is selected and used according to the processing purpose.
Also, Energy beamTheConvergent beamIt is good.Since the beam pattern in which the shielding object or the pattern of the shielding object is irradiated onto the surface of the workpiece is reduced and projected, processing with a dimension smaller than the dimension of the shielding object or the pattern of the shielding object itself becomes possible. In order to control the reduction ratio, the beam convergence angle and the distance between the workpiece and the shield are controlled. By such a method, it becomes possible to process a reduced pattern having a reduction ratio of a fraction of 1 to tens of thousands.
[0032]
This method is particularly suitable when it is difficult to realize a pattern size required for processing, for example, when the pattern size of the shielding object or the shielding object is difficult to realize, for example, a processing line width of 0.1 nm, but a bar-shaped shielding of 10 nm. When there is only an object, it is used to perform a finer pattern processing than the existing shielding object.
[0033]
Also, the above bookinventionBy the lightAnd / or quantum effect lensesCan be madeThe Thereby, it becomes possible to manufacture a minute optical lens or the like in which the shape of the workpiece and the curved surface in the local area of the workpiece are manufactured. With lenses that have wavelength selectivity and energy selectivity depending on the size of the lens, the lens effect is lost at wavelengths longer than the lens size, and the lens effect occurs only with light and lasers with short wavelengths. It is possible to produce an optical lens that brings about no effect.
[0034]
Also, if the material exhibits a quantum effect, light or laser is incident on the ultrafine waveguide or lens-shaped element to change the ultrafine shape of the waveguide, change the lens shape, or By applying a magnetic field, a lens effect accompanied by a quantum effect and a phenomenon accompanied by a wavelength shift effect are generated. As the lens shape, for example, an ultrafine protrusion is formed at the tip of the lens, and a quantum effect such as a wavelength shift occurs when light reaches the ultrafine protrusion. Conventionally, for example, in such a curved surface, it was impossible to produce an ultra-fine projection structure at the tip, but the present invention makes it possible to realize the effect element as described above. Become.
[0035]
【Example】
FIG. 1 shows an embodiment of a processing apparatus according to the present invention, which includes an energy beam source 1 for generating a parallel energy beam B and a support for supporting a workpiece 2 at a position facing the energy beam source 1. A device 3 and a gripping device 5 for gripping the shield 4 at a position between the energy beam source 1 and the workpiece 2 are provided. The support device 3 is provided with a workpiece moving device 6 for finely or coarsely moving the workpiece 2, and the gripping device 5 is provided with a shield moving device 7 for finely or coarsely moving the shield 4. .
[0036]
The workpiece moving device 6 is a rotational / translational moving stage, which includes a three-axis translational movement mechanism 8, 9, 10 in the X, Y, and Z directions and a rotational movement mechanism 11 around the Z axis. It is used by being stacked one after another. The shielding object moving device 7 includes a translational triaxial movement mechanism 12, 13, 14 in the X, Y, and Z directions, and a biaxial axis used to adjust the parallelism between the surface of the workpiece 2 and the shielding object 4. A parallelism adjusting mechanism 15 is provided.
[0037]
As shown in FIG. 2, an ultra-precise movement mechanism 17 using a piezoelectric element 16 is installed in the shield installation portion. Here, the piezoelectric element 16 and a reduction or enlargement movement mechanism are used to translate it. The movement speed of the fine movement in can be controlled on the order of 0.1 nm to 50 nm. An example of an ultra-precision fine movement moving mechanism 17 using this piezoelectric element 16 is shown in FIGS. As the direction of fine movement using the piezoelectric element, one having 1 to 3 axes is used, but FIG. 3 shows an example in the case of 1 axis and FIG. 4 shows an example in the case of 2 axes.
[0038]
FIG. 5 is an apparatus similar to FIG. 1 except for a support device 6 that supports the workpiece 2. That is, it includes a three-axis translation mechanism 8, 9, 10 and a horizontal rotation mechanism 18 around one axis, and rotation of the workpiece 2 around an axis perpendicular to or oblique to the axis of the beam B. Is possible. The gripping device 7 for the shielding object 4 is the same as that shown in FIG. 1, and the fine movement mechanism using the piezoelectric element is the same in that it may be one to three axes. In addition to driving the piezoelectric element, a fine movement mechanism using a magnetostriction effect or a fluctuation effect is also used, and a movement distance control mechanism using a lever action is used according to the required movement distance.
[0039]
By installing the shielding object 4 or the workpiece 2 or both of them in the coarse movement / fine movement moving mechanism and controlling the translation movement of the shielding object or the rotational movement of the workpiece by the apparatus as described above, An ultra-fine structure as specifically shown in FIG.
[0040]
Here, a parallel plate type high-speed atomic beam source is used as the energy beam source 1, and an object in which a fine wire 20 such as a fiber or tungsten is bonded to the central portion of the square hole pattern of the Ni electroformed mask 19 as the shielding object 4. Used. For bonding, local radical beam film formation or sputter film formation is used. In the figure, an ultra fine wire is bonded to the lower surface of the electroformed mask 19, but it may be used on the upper surface. Moreover, although this thin wire | line 20 is formed in the cross-sectional circle shape, it is good also as arbitrary cross-sectional shapes according to the convenience of the manufacture.
[0041]
In this example, since a high-speed atomic beam is used, the material of the workpiece 2 can be any material such as metal, semiconductor, insulator, and inclined material. It is preferable to select an atom that forms an atomic beam that is highly reactive to the workpiece 2 and low in reactivity to the shield 4. Moreover, it is preferable to select the material of the shielding object 4 with respect to the workpiece 2 so that the reactivity is different. In the energy beam source 1, such a gas is introduced to generate a fast atomic beam. In order to reduce the gas reactivity of the shield 4, it is also effective to perform a thin film coating of gold or silver on the shield 4.
[0042]
Here, when the X stage 12 of the shielding object moving device 7 is driven while irradiating a beam from the high-speed atomic beam source 1 to finely move the shielding object 4 or the workpiece 2 in the x direction, each part of the surface to be processed The beam irradiation time at is controlled by the movement trajectory and movement speed of the shield 4. The irradiated portion is etched according to the irradiation time, and the portion covered with the shielding object remains as a convex portion without being irradiated for that time.
[0043]
FIG. 6 shows a case where a groove having a width w is formed on the workpiece W so that the cross section has a curved surface represented by an arbitrary function y = f (x). This is performed using a parallel energy beam, a fixed mask 41 having a slit 41a having a width w, and a moving mask 42 having an edge 42a parallel to the slit. That is, in a state where the energy beam is irradiated, the moving mask 42 is moved in a direction (x direction) orthogonal to the edge, and the energy beam is sequentially shielded.
[0044]
In this case, since the amount of processing by the beam is proportional to the irradiation time, y = at. That is, at the time at, the tip of the moving mask only needs to be at the position f (x). Therefore, at = f (x), and the inverse function of f (x) is expressed as fⁱ  Then x = fⁱThe movement mask 42 may be moved so as to be (at). Further, if the surface is not smooth when trying to obtain a large processing amount in one process, the same process may be repeated a plurality of times. In this case, the same x = fⁱIf it moves so as to ride the curve of (at), it may move from the opposite direction, that is, it may move back and forth.
[0045]
FIG. 7 shows a case where the cross section is a straight line, that is, expressed as f (x) = bx. In this case, x = (a / b) t, and the groove 21 having the inclined surface 21a is formed by moving or reciprocating the moving mask 42 at a constant speed. Further, if this operation is performed with the edge 42a of the moving mask 42 turned in the opposite direction and shifted in position, the V-shaped groove 22 as shown in FIG. 8 or the inverted V-shaped protrusion as shown in FIG. Articles 23 can be formed. In order to create a V-shaped groove in a shorter process, the two moving masks 42 may be moved or reciprocated in synchronization from the left and right as shown in FIG.
[0046]
In the above embodiment, one or a set of moving masks 42 is provided. However, as shown in FIG. 11, two or more moving masks 42 may be provided. The illustrated example is a structure that moves in directions orthogonal to each other, but the direction of movement of the moving mask 42 at each stage is arbitrary.
[0047]
As a method for forming the V-shaped groove 22 more simply, there is a method as shown in FIG. This reciprocates the moving mask 43 having the slit 43a having a half width of the groove in the width direction by the width of the slit 43a. In this case, since no fixed mask is required, the apparatus and the process are greatly simplified as compared with the case of FIG. The speed changes when the moving mask 43 is reversed, but since the processing speed is usually slow, it does not affect the shape.
[0048]
Further, in this method, in order to form unevenness in two directions corresponding to FIG. 11, the mask and the workpiece are moved in two directions, respectively, as shown in FIG. Thereby, a recess having a shape in which two grooves intersect is formed. In this case, the same processing can be performed only by giving a rotational (scrolling) motion along an ellipse or a circle to one of the shield 44 and the workpiece W as a vector sum of their relative motion.
[0049]
Further, in order to form the grooves 24 and the protrusions 25 having flat surfaces at the bottom and the top, the slit width w 'may be made larger than the movement pitch w as shown in FIG. Although the case where the slope is formed is shown here, it can be easily understood that the groove 26 having the curved surface 26a can be formed by controlling the speed as shown in FIG.
[0050]
When forming the protrusions protruding from the other portions, the planes on both sides of the protrusions 23 in FIG. 9 are cut. However, as shown in FIG. By moving or reciprocating, the protrusion 27 protruding from the plane can be formed in one step. Similarly to the case of FIG. 15, by controlling the speed of the moving mask 46, the ridge 28 having the curved surface 28 a can be formed as shown in FIG. 17.
[0051]
FIG. 18 shows an example using a shield 47 having a specific pattern shape. As shown in FIG. 5A, the pattern shape in this example is different in three stages in width. This shield is produced by electroforming. In other words, it is produced by forming a photoresist pattern on a flat glass surface by photolithography technology, electroforming nickel on the surface, then dissolving the photoresist with a solution and peeling off the nickel pattern film. ing.
[0052]
Thereby, a foil-like shield 47 made of nickel material having a thickness of 1 to 10 μm was formed, and a pattern having a minimum width dimension of 1 to 5 μm was formed thereon. As another example of the foil-like shield, a semiconductor thin film such as Si / GaAs using a sacrificial layer can be used. For the production of the photoresist film pattern, an electron beam drawing method or a photomask by electron beam drawing is used, and since both can control the electron beam drawing shape, an arbitrary pattern shape can be realized.
[0053]
Pattern-shaped shields having different widths are used in three stages of pattern widths of a: 1 μm, b: 10 μm, and c: 20 μm. As shown in FIG. 5B, the pattern-shaped shielding object has a movement width of 10 μm and is made the same as the pattern width b. As a result, the beam irradiation distribution changes at each of the positions a, b, and c having different widths of the pattern shape. Therefore, as shown in FIG. , 28c can be manufactured at the same time.
[0054]
As described above, according to the processing method of the present invention that controls the relative motion between the pattern shape shield and the workpiece, a micro three-dimensional structure can be manufactured, and a structure with a different processing amount according to the pattern shape can be manufactured. You can do it at once. Such processing is used in a micro electric circuit or a micro optical circuit.
[0055]
FIG. 19 and subsequent figures show still another embodiment of the present invention, in which the shield and the workpiece W are relatively moved in two directions. The two directions are typically orthogonal directions. The movement in the first direction forms unevenness along the same movement direction as described above, and the movement in the second direction is for forming such uneven cross-sectional shape in a wider range. Basically, scanning is performed in the second direction at a specific position in the first direction, and this process is sequentially shifted in the first direction and repeated.
[0056]
FIG. 19 shows a process of sharpening the end of the cylindrical workpiece W. The axis of the workpiece W is arranged perpendicular to the beam, and the plate-shaped shielding object 48 and the workpiece W are arranged. While performing relative movement in the axial direction, the workpiece W is rotated around the axis. In this case, if rotation is performed at high speed with respect to movement in the axial direction, a substantially rotationally symmetric conical surface 29 is created.
[0057]
20 to 22 show a process of forming a circumferential groove 30 having a predetermined cross-sectional shape on the surface of a disk or the like, and applies the method of FIG. That is, the disk-shaped workpiece W is supported so as to be rotatable about the axis, and the shield 49 having the hole-shaped opening 49a is reciprocated in the direction of one diameter of the workpiece by the width of the opening 49a. Move. By changing the speed pattern of the reciprocating movement and the shape of the opening 49a, the curved surface groove 30 (FIG. 20), the V-shaped groove 31 (FIG. 21), and the like can be obtained. Further, the depth of the grooves 30 and 31 can be changed by adjusting the rotation speed and the like (FIGS. 21 and 22).
[0058]
23 and the following are examples in which a more complicated relative movement is performed between the shield 49 and the workpiece W. FIG. The example of FIG. 23 is an application of the method of FIG. 13, that is, a plurality of smaller convex portions 30 are formed on a spherical surface formed at the tip of a cylindrical workpiece W. In this case, the shield 49 having the hole-shaped opening 49a is reciprocated in the axial direction, and the workpiece W is swung around the axis by the same width to form the recess between the projections 30. To do. By repeating this process sequentially, a large number of convex portions 30 as shown in the figure are formed.
[0059]
FIG. 24 shows a rotating motion of the shielding object 50 composed of the thin line 50a and the frame 50b, whereby a projection 31 having a flat top and a gentle slope as shown in FIG. 25 is formed. In contrast, in the mask with slits, the recesses are formed as described in FIG.
[0060]
FIG. 26 to FIG. 32 show an embodiment in which the unevenness of various patterns is formed by changing the direction of the energy beam incident on the workpiece through the shield and adding a relative motion as appropriate.
FIG. 26 shows the same apparatus configuration as that of FIG. 24, and performs the rotational movement with the substrate W inclined at an angle θ. As a result, an ellipse or a circular protrusion 32 such as a three-dimensional ultrafine lens-like structure can be obtained. A recess with the opposite shape is created.
[0061]
In FIG. 27, a shielding object having a circular hole 51a and a workpiece W are installed, and the beam incident direction is changed by swinging the beam source. Then, as shown in (a) or (b), it is possible to form an indented recess 32 having an inclined side surface 32a. At this time, by appropriately controlling the rotation speed at the time of swinging, the bottom surface can be made the flat surface 32b or the concave surface 32c as shown in FIG. FIG. 28 uses a shielding object 52 having a pattern of slit holes 52a, whereby a dovetail groove 33 whose side surface 32 is inclined is formed. Using this workpiece W, a fine rail-slider structure can be created.
[0062]
FIG. 29 shows an example in which the beam B performs a sawtooth circular motion around the axis of the circular hole 51 a of the shield 51. When such processing is performed, an annular groove 34 having side walls having the same inclination on the inner side and the outer side is formed as shown in FIG.
FIG. 30 shows an example in which a shield 53 having a square hole 53a is used. When the beam B is swung in two directions and the movement speed is controlled, a cross groove 35 having a flat processing bottom surface is formed. .
[0063]
FIG. 31 and FIG. 32 show a case where the shielding objects 53 and 54 having a plurality of fine holes are used, the beam is shaken in multiple directions, or a sawtooth circular motion is performed. A multi-directional three-dimensional fine hole 36 or groove 37 is processed until the formed hole penetrates the workpiece W or partway.
[0064]
When a periodic fine structure as shown in FIG. 32 is formed on a sample such as GaAs, an element having a photonic bandgap structure capable of passing only light of a single wavelength can be manufactured. Or as an energy filter element. When such a structure is used for a semiconductor laser, a laser element having a single wavelength, a single mode, and a quantum efficiency of 100% can be manufactured.
[0065]
As in these examples, the relative position of the work piece W and the shielding object 4 can be moved, so that the degree of freedom, flexibility, and controllability of design / production in ultra-fine machining are significantly improved. Thus, it becomes possible to perform three-dimensional processing and curved surface processing in an ultra-fine processing region that was impossible. This control is generally performed by setting a pattern of the shielding objects 4... For the shape that needs to be formed on the workpiece W and determining a movement and speed pattern. When there is a restriction on the shape obtained with one shielding pattern, another pattern may be used for repeated processing, or another processing method may be used in combination. Further, the processing may be performed by changing the beam irradiation direction itself.
[0066]
So far, the embodiment has been described on the premise that the energy beam is a parallel beam. However, in FIGS. 33 to 35, the embodiment in the case of performing ultrafine processing using the energy beam B having convergence is described. Indicates. In FIG. 33, the projection 38 having a smooth curved surface is formed by moving the thin wire 50a in the direction along the beam B, that is, in the Z direction. A normal energy beam is not completely maintained in parallelism and has a certain scattering angle. Therefore, if the distance between the shield 50a and the workpiece W is increased, a continuous energy beam dose distribution can be obtained. We are using.
[0067]
FIGS. 34 and 35 use an intentionally focused energy beam, which is very effective when the shield or the pattern of the shield does not satisfy the required micro dimensions. By using the convergent beam, the pattern of the shielding object is reduced and projected onto the surface of the workpiece W. Therefore, the shape of the shield is reduced and transferred, and ultrafine processing can be executed. By controlling the distance between the surface of the workpiece W and the shielding object, the projection reduction rate of the shielding object pattern can be controlled.
[0068]
FIG. 34 shows an example in which ultrafine processing is performed by controlling the relative positional relationship between the shield 50a and the workpiece W using a convergent energy beam. In this example, the relative position movement of one thin line shield 50a and the workpiece W is controlled. For example, when the translational movement in the x direction is performed, a stationary time is created at two locations, and the surface of the workpiece W is moved. Control the amount of beam to irradiate. As a result, two fine protrusions 39 each having a smooth curved surface and a flat upper surface are reduced and formed. At this time, if the distance between the shield 50a and the workpiece W is controlled in the z direction at the same time, the reduction rate can be controlled at the same time, and processing of the same dimension or processing of different dimensions can be performed at two locations.
[0069]
In FIG. 35, a shield 54 having a structure in which needle portions 54b extend in four directions on a spherical object 54a is used. At this time, the center of the spherical object 54a and the center of rotation of the workpiece W are on the central axis in the beam flight direction. When energy beam processing is performed under such conditions, the projection of the spherical object 54a is performed and the projection 40 is formed. Since the needle portion 54b is rotated, the irradiation amount of the energy beam is uniform on the surface of the workpiece, and finally, reduction projection processing of only the spherical object shape is performed. At this time, if the stationary time state is periodically formed by controlling the rotational motion of the workpiece W, the reduced portion of the needle portion 54b is formed.
[0070]
Next, some examples of the structure and manufacturing method of the minute shield will be described. As described above, the method of the present invention performs ultrafine pattern processing, and the shielding object also requires an ultrafine and highly accurate structure.
[0071]
FIG. 36 shows an example of a process for refining a pattern. As shown in FIG. 36A, a somewhat small pattern structure 121 prepared in advance by electrolytic polishing or electroforming is accommodated in a sealed chamber 122. After the inside is evacuated to a vacuum, a gas G having reactivity with respect to the structure 121 is introduced. As a result, the atoms and molecules near the surface are desorbed by the reaction between the surface of the structure and the gas particles, and isotropically processed, and the size of the structure gradually decreases.
[0072]
At this time, in order to control the chemical reactivity, the reactive state is controlled by irradiating light from the lamp 123 or the temperature of the structure 121 is controlled to control the reactivity. When controlling the temperature of the structure 121, a heater 124 may be used in addition to the lamp 123. As described above, the method of supplying the reactive gas to the surface and gradually performing the isotropic processing can reduce the order of 0.1 nm to 10 nm by controlling the processing amount with time. . This is difficult due to the high processing speed of other methods, for example, a method of immersing the shield in the reaction solution.
[0073]
FIG. 36B shows an example of manufacturing the shielding object 154 having the rod-shaped pattern portion 126 having the base portion 125. This is produced by combining a portion (pattern portion 126) used as a shielding object pattern and a moderately sized portion (base portion 125) for handling, and can be handled easily during and after the production. . The base 125 may be a square member of about 1 mm.
[0074]
The fine rod-shaped shield prototype 150a miniaturized to a diameter of 50 nm to 100 nm by electrolytic polishing or the like becomes an ultrafine rod-shaped pattern having a diameter of 0.1 nm to 10 nm as shown in FIG. For example, when the material of the minute pattern is GaAs or Si, chlorine or fluorine-based reactive gas is used, and when tungsten is used, fluorine-based reactive gas is used. Further, instead of introducing the reactive gas, it is also possible to introduce reactive radical particles. When reactive radical particles are used, isotropic processing is performed faster than when reactive gas particles are used, which is effective when there is a large amount of processing when the shield is miniaturized.
[0075]
FIG. 37 shows an example in which a material produced by electroforming using Ni or the like as a material is processed by the method of FIG. In the case of the Ni shield 157a, chlorine-based gas is used as the reactive gas or reactive radical. Further, the temperature of the shielding object 157a is controlled from 500 ° K to 1000 ° K by heating the heater 124 and the lamp 123. As a whole, miniaturization is performed about 1 μm to 10 μm.
[0076]
FIG. 38 and FIG. 39 show another method for manufacturing a shield having a rod-like pattern, which includes a frame part A, a central part B, and an axis C so that the axis C can be attached to the rotating body with high accuracy. The jig 131 is used. A hole is opened in the frame portion A, and a wire rod 132a having a line width of about 1 μm, such as a carbon wire or quartz fiber, is wound around the portion at an equal interval of, for example, 5 μm. In order to wind at an equal interval pitch, a rotating body is attached to an NC lathe or the like, and translated at the same time as the rotation to control the pitch. Thereafter, the wire 132a is bonded to the periphery of the A part, and the A part and the C part are separated to obtain a shield prototype 158a as shown in FIG.
[0077]
Next, the shield prototype 158a produced in this manner is subjected to the temperature or reactivity of the shield in the vacuum vessel 122 into which reactive gas or reactive radical particles have been introduced, using the apparatus of FIG. By controlling the degree of excitation and activity of the gas or reactive radical particles, the surface desorption reaction of the shield is performed, and the wire 132a having a diameter of 1 μm is miniaturized into a pattern portion 132 having a diameter of 0.1 nm to 100 nm. .
[0078]
FIG. 40 shows an example in which a thin portion 84 is formed in a part of the flat shield 83 and a pattern opening 85 is formed in the thin portion 84. In the case of such a thin portion 84, in the case of aluminum or stainless steel, a protective film such as a photoresist film is formed in a pattern in addition to the portion to be thinned, immersed in a chemical reaction solution, wet etched, and the thin portion 84 The thickness is 10 μm. In the case of Si, the wet etching can be performed, but the thin portion 84 can be processed by irradiation with energetic particles such as high-speed atomic beam processing or plasma process.
[0079]
A photoresist film pattern by lithography is further formed on the thin portion 84 produced in this way, and a pattern or pattern hole of 10 μm or less is produced using wet etching, a plasma process, or high-speed atomic beam processing. In this example, a 500 μm × 500 μm region was processed into a thin portion 84 on a 10 mm × 10 mm plate-like structure 83, and then a micro slit array having a plurality of slit widths of 5 μm and a pitch of 5 μm was formed as the fine pattern holes 85.
[0080]
Thus, by making a part a thin part, it is possible to produce a shield that can be easily handled with a certain rigidity and that can prevent beam scattering at the edge of the pattern.
[0081]
In FIG. 41, the pattern 87 of the shield 86 is formed so as to become thinner toward the edge 88 thereof. Thereby, since the edge 88 of the pattern is sharp, scattering at this portion is suppressed, and a clear transfer process can be performed.
[0082]
FIG. 42 is an example of a foil-like shield. Here, electroforming is used. That is, a photoresist pattern is formed on a flat glass surface by photolithography, and nickel is electroformed thereon. Then, the photoresist is dissolved with a solution, and the nickel pattern film 89 is peeled off. Thereby, a foil-like shield made of nickel having a thickness of 1 to 10 μm was formed, and a pattern having a minimum width dimension of 1 to 5 μm was formed thereon. In addition to the above, a thin semiconductor material such as Si / GaAs is also used as the thin film.
[0083]
With such an ultra-thin shield, even when a pattern shape of several tens of μm or less is formed, it is possible to prevent the beam directivity from being deteriorated due to scattering by the side wall of the beam.
[0084]
The above foil-like shield can be used as shown in FIG. That is, as shown in FIG.₂When the workpiece W having the ridge 90 having a curved cross section formed on the surface of the material plate is processed to form a hole or groove 91 in the surface of the ridge 90, (b) As shown in Fig. 2, a foil-like shielding object is bonded to a fixture (not shown) shaped along the ridge 90, and the distance between the lower surface of the shielding object and the surface of the workpiece is set to be constant at 100 µm or less. And irradiate the beam.
[0085]
In this example, a plurality of circular holes 92 having different sizes are formed as the pattern of the shielding object. If the beam is irradiated in a stationary state, holes having different diameters can be formed on the curved surface. In this case, the diameter of the circular hole 92 is 5 μm, 10 μm, and 15 μm. Further, by moving the workpiece W in a certain direction, a micro-groove structure can be produced in the moving region.
[0086]
Up to now, a method for producing an ultra-fine workpiece has been shown. By using this method, a material of the workpiece is a group 3-5 semiconductor such as GaAs / AlGaAs / InGaAs or a Si-based semiconductor. A quantum effect element that produces an effect can be manufactured.
[0087]
Furthermore, according to the method of the present invention, since a smooth curved surface can be processed, a minute optical lens can be manufactured. FIG. 44 shows an example in which a minute optical lens structure is produced and an optical lens 70 in the order of the wavelength of light is produced. When this lens 70 is used, light having a wavelength longer than the lens diameter at the same time as the conventional optical lens action is scattered because the conventional lens action is not performed. realizable. For example, when the lens diameter is about 500 nm, red light having a long wavelength is scattered, and blue light having a short wavelength is subjected to the lens effect and collected. Further, by utilizing such an effect, it can be used as a diffraction element for laser light, as a wavelength selecting device or an energy filter.
[0088]
In FIG. 45, when a projection 72 having an ultrafine structure is formed on the surface of the optical lens 71 and a quantum effect occurs in the projection 72, the light generated by the wavelength of the light L incident on the lens 71 and the quantum effect. In this state, when the incident light reaches the protrusions 72 on the surface of the lens 71, the induced radiation is emitted, and the light intensity is increased at the same time as the light is condensed.
[0089]
FIG. 46 shows an example in which a large number of ultra-small lens shapes 74 are formed on a flat plate 73, and the incident light / laser is uniformly dispersed, and then is used as a homogenizer 76 that is converted again into parallel light / laser by the lens 75. . Since a larger number of minute lenses can be arranged than in the prior art, the beam intensity uniformity performance is significantly improved.
[0090]
【The invention's effect】
As described above, according to the present invention, the degree of freedom in pattern production is high, and the curved surface and slope of an arbitrary pattern can be processed freely and with high accuracy, so that the quantum effect that has been difficult to manufacture so far can be obtained. The laser, light emitting element, and optical lens element used can be manufactured. And since an apparatus and a process are simple structures, an apparatus cost and manufacturing cost can be reduced significantly. Further, since processing can be performed without being constrained by the surface shape of the workpiece, and processing that adversely affects the surface after processing is not necessary, a highly practical processing means can be provided.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing the overall configuration of a processing apparatus using an energy beam according to an embodiment of the present invention.
FIG. 2 is a view showing an ultrafine movement mechanism.
FIG. 3 is a perspective view showing the ultrafine movement mechanism in more detail.
FIG. 4 is a perspective view showing an example of another ultrafine movement mechanism.
FIG. 5 is a schematic diagram showing an overall configuration of a processing apparatus using an energy beam according to another embodiment of the present invention.
FIG. 6 is a schematic view showing an embodiment of the processing method of the present invention.
FIG. 7 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 8 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 9 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 10 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 11 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 12 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 13 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 14 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 15 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 16 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 17 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 18 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 19 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 20 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 21 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 22 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 23 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 24 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 25 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 26 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 27 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 28 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 29 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 30 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 31 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 32 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 33 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 34 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 35 is a schematic view showing another embodiment of the processing method of the present invention.
FIG. 36 is a diagram showing a configuration and a manufacturing method of a shielding object used in the processing method of the present invention.
FIG. 37 is a view showing a structure and a manufacturing method of a shield according to another embodiment used in the processing method of the present invention.
FIG. 38 is a diagram showing a structure and a manufacturing method of another shielding object used in the processing method of the present invention.
FIG. 39 is a diagram showing a step subsequent to FIG. 38.
FIG. 40 is a diagram showing a configuration of another shielding object used in the processing method of the present invention.
FIG. 41 is a diagram showing a configuration of another shielding object used in the processing method of the present invention.
FIG. 42 is a diagram showing a configuration of another shielding object used in the processing method of the present invention.
FIG. 43 is a diagram showing the configuration and usage of another shield used in the processing method of the present invention.
FIG. 44 is a diagram showing an example of a lens formed by the processing method of the present invention.
FIG. 45 is a diagram showing another example of a lens formed by the processing method of the present invention.
FIG. 46 is a diagram showing still another example of a lens formed by the processing method of the present invention.
FIG. 47 is a diagram showing a conventional processing method using a beam.
[Explanation of symbols]
1 Energy beam source
2 Workpiece
3 Support device
4,41-54,83,86,89,155,157,158 Shield
5 Gripping device
6 Workpiece moving device
7 Shield moving device
8,9 Translation stage
11 Rotating stage
12, 13, 14 Translation stage
17 Fine movement mechanism
18 Rotating support device
21, 22, 24, 26, 37 grooves
23, 25, 27, 28, 39
26a curve
29 Conical surface
30 Convex
31, 38, 40, 73 protrusion
32 recess
32a side
33 Ant groove
34 Annular groove
35 Cross groove
36 holes
71,72 lens

Claims (10)

A processing method using an energy beam for irradiating a workpiece having a curved surface with a fast atomic beam emitted from an energy beam source through a shield having a predetermined pattern and processing the curved surface of the workpiece. ,
The shield is provided with a hole-shaped opening, and the size of the opening is 0.1 nm to 10 μm, and the fast atom is moved after relatively moving between the shield and the curved surface of the workpiece. A processing method using an energy beam, wherein a plurality of fine irregularities are formed on a curved surface of the workpiece by irradiating a line . 2. The processing method using an energy beam according to claim 1, wherein at least one relative movement of the energy beam source, the shielding object, and the workpiece is continuously performed to make the unevenness a smooth curved surface or a slope. . The processing method using an energy beam according to claim 1, wherein the unevenness is formed along a specific direction in which the shield moves. 4. The processing method using an energy beam according to claim 1, wherein the movement is a translational movement in a direction intersecting the beam. 4. The processing method using an energy beam according to claim 1, wherein the movement is a rotational motion in a direction intersecting the beam. 4. The processing method using an energy beam according to claim 1, wherein the movement is to change an angle of the energy beam with respect to the workpiece. 4. The processing method using an energy beam according to claim 1, wherein the movement is performed by rotational movement of at least one of an energy beam source, a shield, and a workpiece. 8. The processing method using an energy beam according to claim 1, wherein a beam irradiation amount is controlled using an opening area distribution of a pattern formed on the shielding object. 9. The processing method using an energy beam according to claim 1, wherein a material having a reactivity different from that of the workpiece is selected as the material of the shielding object. 10. The processing method using an energy beam according to claim 1, wherein the shield has a plurality of repeated patterns having the same shape.

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