CN113307224A - Preparation method of rotating structure - Google Patents
Preparation method of rotating structure Download PDFInfo
- Publication number
- CN113307224A CN113307224A CN202110582001.1A CN202110582001A CN113307224A CN 113307224 A CN113307224 A CN 113307224A CN 202110582001 A CN202110582001 A CN 202110582001A CN 113307224 A CN113307224 A CN 113307224A
- Authority
- CN
- China
- Prior art keywords
- electrode
- substrate
- slope
- preparing
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 152
- 238000000034 method Methods 0.000 claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims description 72
- 230000003647 oxidation Effects 0.000 claims description 63
- 238000007254 oxidation reaction Methods 0.000 claims description 63
- 229920002120 photoresistant polymer Polymers 0.000 claims description 52
- 238000005530 etching Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 17
- 238000001259 photo etching Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 181
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 3
- 244000126211 Hericium coralloides Species 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000004925 denaturation Methods 0.000 description 2
- 230000036425 denaturation Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00198—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0156—Lithographic techniques
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Abstract
The embodiment of the invention discloses a preparation method of a rotating structure, which comprises the following steps: providing a substrate and a mask plate, wherein the mask plate comprises a first exposure opening and a second exposure opening; carrying out mask exposure on the substrate through a mask plate and simultaneously moving the substrate at a constant speed so as to form a slope structure on the substrate, wherein the slope structure comprises a first slope surface and a second slope surface; and preparing a rotatable structure and an electrode structure, wherein the electrode structure comprises a first electrode and a second electrode, the first electrode is electrically connected with the slope structure, the second electrode is electrically connected with the rotatable structure, and the rotatable structure is used for rotating according to electrostatic force between the first electrode and the second electrode. The slope structure is prepared by utilizing a mobile photoetching method, the slope structure is simple to prepare, and the technical problem that the process for preparing the slope structure by utilizing a multi-time photoetching process in the prior art is complex is solved; meanwhile, when the slope structure is prepared by using a mobile photoetching method, the inclination angle of the slope structure is adjustable, and the slope structure is flexibly prepared.
Description
Technical Field
The embodiment of the invention relates to the technical field of micro-electromechanical systems, in particular to a preparation method of a rotating structure.
Background
In the field of micro-electro-mechanical systems, the rotating structure can be applied to wave front correction of adaptive optics, spatial light modulation, optical element alignment, micromanipulator, optical switch, optical attenuator, optical multiplexer and the like
The driving mode according to the revolution mechanic is different, mainly divide into: electromagnetic drive, electrothermal drive, piezoelectric drive, electrostatic drive, and the like. The electromagnetic drive uses magnetic field force generated by an electromagnet or a permanent magnet as a driving force, and the driving current is large, the energy consumption is large, and the manufacture of a magnetic thin film and the application of an external magnetic field are very difficult. The electrothermal drive utilizes the drive current to make the material expand when heated to generate the drive force, so the response speed is low, the power consumption is high, the influence of the environmental temperature is large, and the precision is low. The MEMS piezoelectric manufacturing process is not mature, the manufacturing difficulty is large, and the performance is unstable, so that the MEMS piezoelectric driving device cannot be applied in the market in a mature way. Electrostatic actuation is the most studied one at present, and typically involves the introduction of one or more pairs of electrodes into the structure, the movement being driven by electrostatic forces between the electrodes.
The rotating structure driven by static electricity mainly adopts two modes of comb tooth driving and flat plate driving, and the comb tooth driving can also realize two-dimensional rotation by driving comb teeth in different directions. However, the size of the comb teeth and the gaps thereof is generally in the micron level, and once dust particles fall into the comb teeth, the comb teeth can cause the structure to be stuck, and the device cannot work normally, so that special attention needs to be paid to the packaging environment and the packaging. In the parallel plate driving structure, because the electrostatic force is inversely proportional to the square of the distance, and meanwhile, in order to prevent the upper and lower electrodes from generating the attraction effect to cause the structural damage, a large electrode distance is needed between the upper and lower polar plates.
In the prior art, gray scale mask lithography or M2LIGA technology can be used to fabricate the parallel plate drive structure. The gray mask can be classified into a direct-writing gray mask and an analog gray mask according to the manufacturing equipment and principle. The direct-writing gray mask has the characteristics of high precision, expensive required equipment, low speed for manufacturing the gray mask and high cost. The spatial frequency of the halftone and gray-scale dot patterns of the analog gray-scale mask limits further reductions in minimum feature size. The M2LIGA technology has the disadvantages of high cost (an X-ray source needs an expensive accelerator), 3D microstructure which is a mask used for X-ray lithography, complexity, long period, and the like.
Disclosure of Invention
In view of this, embodiments of the present invention provide a method for manufacturing a rotating structure, so as to solve the technical problems of complex manufacturing and high manufacturing cost of the rotating structure in the prior art.
The embodiment of the invention provides a preparation method of a rotating structure, which is used for preparing the rotating structure driven by static electricity, wherein the rotating structure comprises a slope structure and a rotatable structure;
the preparation method comprises the following steps:
providing a substrate and a mask plate, wherein the mask plate comprises a first exposure opening and a second exposure opening;
carrying out mask exposure on the substrate through the mask plate and simultaneously moving the substrate at a constant speed so as to form a slope structure on the substrate, wherein the slope structure comprises a first slope surface and a second slope surface;
preparing a rotatable structure and an electrode structure, the electrode structure comprising a first electrode and a second electrode, the first electrode being electrically connected with the ramp structure, the second electrode being electrically connected with the rotatable structure, the rotatable structure being configured to rotate in accordance with an electrostatic force between the first electrode and the second electrode.
Optionally, the mask exposure is performed on the substrate through the mask plate, and the substrate is moved at a constant speed to form a slope structure on the substrate, including:
preparing a first oxidation layer on one side of the substrate and patterning the first oxidation layer, wherein the first oxidation layer exposes the preparation area of the slope structure;
preparing photoresist on the side of the first oxidation layer far away from the substrate and the exposed area of the first oxidation layer;
carrying out mask exposure on the photoresist through the mask plate and simultaneously moving the substrate at a constant speed so as to form a photoresist slope structure on the photoresist;
and etching the substrate through the photoresist slope structure to form a slope structure on the substrate.
Optionally, before preparing the first oxide layer on the substrate side and patterning the first oxide layer, the method further includes:
preparing an oxidation protection layer on one side of the substrate and patterning the oxidation protection layer, wherein the oxidation protection layer covers a preparation area of the slope structure;
carrying out thermal oxidation treatment on the exposed area of the oxidation protection layer, wherein an oxidation structure is formed in the exposed area of the oxidation protection layer;
and removing the oxidation protection layer and the oxidation structure so that the surface of the preparation area of the slope structure is higher than the non-preparation area of the slope structure.
Optionally, the preparation method further comprises:
adjusting a distance between the ramp structure and the rotatable structure.
Optionally, the mask further includes an isolation mask structure located between the first exposure opening and the second exposure opening;
adjusting a distance between the ramp structure and the rotatable structure, comprising:
adjusting a distance between the ramp structure and the rotatable structure by adjusting at least one of a thickness of the first oxide layer, a thickness of the oxide structure, and a width of the isolation mask structure.
Optionally, preparing the rotatable structure and the electrode structure comprises:
providing a first semiconductor layer, and bonding the first semiconductor layer and the first oxide layer;
patterning the first semiconductor layer to obtain a rotatable structure and a first electrode preparation window on the first semiconductor layer, wherein the first oxide layer is exposed through the first electrode preparation window;
etching the first oxide layer through the first electrode preparation window to expose the substrate;
preparing a first electrode on the surface of the substrate corresponding to the position of the first electrode preparation window, preparing a second electrode on one side of the rotatable structure far away from the substrate, preparing a second electrode wiring terminal on the surface of one side of the first semiconductor layer far away from the substrate, and electrically connecting the second electrode wiring terminal with the second electrode.
Optionally, etching the first oxide layer through the first electrode preparation window to expose the substrate includes:
over-etching the first oxide layer through the first electrode preparation window, wherein the etching area of the first oxide layer is larger than the exposed area of the first electrode preparation window;
preparing a first electrode on the surface of the substrate corresponding to the position of the first electrode preparation window, preparing a second electrode on one side of the rotatable structure far away from the substrate, and preparing a second electrode connection terminal on one side surface of the first semiconductor layer far away from the substrate, wherein the method comprises the following steps:
depositing a metal layer on one side of the first semiconductor layer, which is far away from the substrate, wherein the metal layer is disconnected at the position of the first electrode preparation window; the metal layer located at the position of the first electrode preparation window is the first electrode, the metal layer located on one side, away from the substrate, of the rotatable structure is the second electrode, and the metal layer located on one side, away from the substrate, of the first semiconductor layer is the second electrode wiring terminal.
Optionally, preparing the rotatable structure and the electrode structure comprises:
preparing a second oxide layer on the surface of the substrate and the slope structure;
preparing a first electrode, a first electrode wiring terminal and a first bonding terminal on one side of the second oxide layer away from the substrate;
providing a second semiconductor layer and preparing a second bonding terminal on one side surface of the second semiconductor layer;
bonding the first bonding terminal and the second bonding terminal;
thinning and patterning the second semiconductor layer to obtain the rotatable structure and expose the first electrode connection terminal;
and preparing a second electrode and a second electrode connecting terminal on the side of the second semiconductor layer far away from the substrate.
Optionally, the rotatable structure comprises a drive wing.
Optionally, the rotating structure further comprises a support frame and a torsion beam;
the part of the substrate outside the slope structure is a supporting frame of the rotating structure;
the preparation method further comprises the following steps:
preparing a torsion beam, wherein one end of the torsion beam is connected with the rotatable structure, and the other end of the torsion beam is connected with the supporting frame; and the torsion beam is parallel to the combined ridge line of the first slope surface and the second slope surface.
According to the preparation method of the rotating structure provided by the embodiment of the invention, a common mask plate with patterns is placed on a substrate covered with a photoresist layer, the exposure is controlled by controlling the moving speed of the substrate, so that slopes with different angles are made on the photoresist, and then the photoresist slope structure is transferred to the substrate to obtain the slope structure with the required angle. The method provided by the embodiment of the invention is adopted to prepare the rotating structure, and the slope structure suitable for electrostatic driving is prepared by utilizing a mobile photoetching method, so that the preparation is simple, and the process cost is low; the inclination angle of the slope structure is adjustable, and the slope structure is flexible to prepare.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments made with reference to the following drawings:
FIG. 1 is a schematic flow chart of a first method for fabricating a rotating structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a reticle structure provided by an embodiment of the invention;
FIG. 3 is a schematic diagram of a mobile photolithography process for fabricating a ramp structure according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart illustrating a second method for fabricating a rotary structure according to an embodiment of the present invention;
fig. 5-14 are schematic diagrams of manufacturing processes of steps in a method for manufacturing a ramp structure according to an embodiment of the present invention;
FIG. 15 is a schematic flow chart illustrating a method for fabricating a third rotary structure according to an embodiment of the present invention;
FIGS. 16-19 are schematic views of the manufacturing processes at various steps in a method for manufacturing a rotatable structure and an electrode according to an embodiment of the present invention;
FIG. 20 is a schematic flow chart illustrating a method for fabricating a fourth rotary structure according to an embodiment of the present invention;
FIGS. 21-26 are schematic views of alternative rotatable structures and processes for fabricating electrodes at various steps of a method for fabricating rotatable structures according to embodiments of the present invention;
FIGS. 27-28 are schematic views of the driving flanks of a rotatable structure provided in accordance with an embodiment of the present invention;
fig. 29 is a schematic structural diagram of a rotating structure according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be fully described by the detailed description with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are a part of the embodiments of the present invention, not all embodiments, and all other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without inventive efforts fall within the scope of the present invention.
Fig. 1 is a schematic flow chart of a method for manufacturing a first rotary structure according to an embodiment of the present invention, where the method for manufacturing a rotary structure according to an embodiment of the present invention is used to manufacture an electrostatically-driven rotary structure, and the rotary structure includes a slope structure and a rotatable structure. As shown in fig. 1, a method for manufacturing a rotating structure according to an embodiment of the present invention includes:
s1001, providing a substrate and a mask, wherein the mask comprises a first exposure opening and a second exposure opening.
Illustratively, the substrate structure may be a structure including a substrate layer, an insulating layer and a semiconductor layer in sequence, and may be, for example, an SOI (Silicon-On-Insulator) Silicon wafer, or may be a common Silicon wafer, which has only one layer of semiconductor structure. For example, as shown in fig. 2, the mask 210 includes a first exposure opening 211 and a second exposure opening 212, the two exposure openings on the mask may be in any pattern, and may be in two different patterns, the shape of the exposure openings may affect the shape of the ramp, in the embodiment of the present invention, a symmetric ramp structure with a rotating structure, preferably a non-through rectangular block, is prepared by using the mask, and the size of the ramp structure may be adjusted by using the rectangular block.
S1002, carrying out mask exposure on the substrate through a mask plate and simultaneously moving the substrate at a constant speed to form a slope structure on the substrate, wherein the slope structure comprises a first slope surface and a second slope surface.
As shown in fig. 3, a principle of the mobile lithography is shown, a layer of photoresist 10 is prepared on a substrate 310, then a mask 210 is placed above the photoresist, light emitted by a lithography machine irradiates the photoresist 10 through a first exposure opening 211 and a second exposure opening 212, the photoresist 10 is denatured after exposure, a region of the photoresist 10 of the substrate 310 where denaturation occurs is moved to form a slope groove, a region of the photoresist 10 of the substrate 310 where denaturation occurs is continuously moved to form a slope structure, the photoresist is developed to form a photoresist slope structure on the photoresist 10, and then the photoresist slope structure is transferred to the substrate 310, so that the slope structure can be obtained.
Further, the moving speed and the light intensity of the substrate 310 may affect the angle of the slope and the shape of the slope, in the embodiment of the present invention, the substrate 310 moves at a constant speed, the light intensity may be uniform, since the light intensity is uniform, the illumination always exists during the moving process of the substrate 310, the image of the light exposed in the photoresist is the integral effect of the light, and the integral of the light on the surface of the photoresist forms an inverse triangle-like pattern, as shown in fig. 3. The angle of the slope can be controlled by adjusting the moving speed of the silicon chip and the light intensity.
S1003, preparing a rotatable structure and an electrode structure, wherein the electrode structure comprises a first electrode and a second electrode, the first electrode is electrically connected with the slope structure, the second electrode is electrically connected with the rotatable structure, and the rotatable structure is used for rotating according to electrostatic force between the first electrode and the second electrode.
Illustratively, the first electrode may be prepared by ion implantation or by directly preparing a metal electrode. Meanwhile, the rotatable unit is electrically connected with the second electrode, the slope structure electrically connected with the first electrode and the rotatable structure electrically connected with the second electrode attract each other under the action of electrostatic force by applying electrode signals on the first electrode and the second electrode respectively, and the rotatable structure rotates to drive the component on the rotatable unit to rotate, so that the corresponding function is realized. For example, optical wavefront correction or optical element alignment can be realized, and different functions can be realized according to application scenarios of the rotating structure.
In summary, according to the method for manufacturing a rotary structure provided by the embodiment of the present invention, a common mask plate with a pattern is placed on a substrate covered with a photoresist layer, the exposure amount is controlled by controlling the moving rate of the substrate, slopes with different angles are formed on the photoresist layer after development processing, and then the photoresist slope structure is transferred to the substrate to obtain a required slope structure. The method provided by the embodiment of the invention is adopted to prepare the rotating structure, and the slope structure suitable for electrostatic driving is prepared by utilizing a mobile photoetching method, so that the preparation is simple, and the process cost is low; the inclination angle of the slope structure is adjustable, and the slope structure is flexible to prepare.
The method for manufacturing the rotary structure will be described in detail below with reference to the actual manufacturing process.
First, a method for producing the ramp structure will be described.
Fig. 4 is a schematic flow chart of a method for manufacturing a second rotating structure according to an embodiment of the present invention, and as shown in fig. 4, the method for manufacturing a rotating structure according to an embodiment of the present invention may include:
s2001, providing a substrate and a mask, wherein the mask comprises a first exposure opening and a second exposure opening.
As shown in fig. 5, a substrate 310 is provided, and optionally, the substrate 310 may be an SOI type silicon wafer including a substrate layer 311, an insulating layer 312, and a semiconductor layer 313. Alternatively, a common silicon wafer may be used as the substrate, and the material of the substrate is not limited in the embodiment of the present invention.
S2002, preparing a first oxide layer on one side of the substrate and patterning the first oxide layer, wherein the first oxide layer exposes a preparation region of the ramp structure.
As shown in fig. 6, a first oxide layer 320 is formed on the surface of the semiconductor layer 313 of the substrate 310, and then the first oxide layer 320 is patterned by applying a photoresist, performing photolithography, and developing, such that the first oxide layer 320 exposes a preparation region 3101 of the ramp structure. The application does not limit the preparation process and the patterning method of the first oxide layer 320.
And S2003, preparing photoresist on the side, away from the substrate, of the first oxidation layer and on the exposed area of the first oxidation layer.
As shown in fig. 7, a photoresist 10 is formed on the surface of the first oxide layer 320 to cover the first oxide layer 320 and the surface of the preparation region 3101 of the ramp structure.
And S2004, carrying out mask exposure on the photoresist through the mask plate and simultaneously moving the substrate at a constant speed so as to form a photoresist slope structure on the photoresist.
As shown in fig. 8, a binary mask as shown in fig. 2 is placed on one side of the photoresist 10 above the substrate 310, and the substrate 310 is moved at a constant speed while performing mask exposure, and is developed to obtain a photoresist slope structure.
And S2005, etching the substrate through the photoresist slope structure to form a slope structure on the substrate, wherein the slope structure comprises a first slope surface and a second slope surface.
As shown in fig. 9, the first semiconductor layer 313 of the substrate 310 is etched through the photoresist ramp structure, the photoresist ramp structure pattern is transferred to the semiconductor layer 313, and the photoresist is removed, so as to obtain the ramp structure 1. Further, the slope structure is etched along the center of the slope structure 1, so as to obtain a first slope surface 11 and a second slope surface 12, as shown in fig. 10.
And S2006, preparing a rotatable structure and an electrode structure, wherein the electrode structure comprises a first electrode and a second electrode, the first electrode is electrically connected with the slope structure, the second electrode is electrically connected with the rotatable structure, and the rotatable structure is used for rotating according to electrostatic force between the first electrode and the second electrode.
In conclusion, the slope structure suitable for electrostatic driving is prepared by using the mobile photoetching method, the preparation is simple, the process cost is low, the inclination angle of the slope structure is adjustable, and the slope structure is flexible to prepare. And before the photoresist is patterned, a first oxide layer is firstly prepared on one side of the substrate, and the first oxide layer covers the region of the non-slope structure, so that when the slope structure is prepared subsequently, the etching surfaces of the substrate on two sides of the slope structure are vertical surfaces rather than inclined surfaces, and the support frame is conveniently formed subsequently.
Optionally, on the basis of the foregoing embodiment, before preparing the first oxide layer on the substrate side and patterning the first oxide layer, the method may further include:
preparing an oxidation protection layer on one side of the substrate and patterning the oxidation protection layer, wherein the oxidation protection layer covers a preparation area of the slope structure;
carrying out thermal oxidation treatment on the exposed area of the oxidation protection layer, and forming an oxidation structure in the exposed area of the oxidation protection layer;
and removing the oxidation protection layer and the oxidation structure so that the surface of the preparation area of the slope structure is higher than the non-preparation area of the slope structure.
As shown in fig. 11, an oxidation protection layer 20 is grown on the surface of the substrate 310, and then photoresist coating, photolithography and development are performed, and the pattern of the oxidation protection layer 20 is etched, so that the oxidation protection layer 20 covers the surface of the preparation region 3101 of the ramp structure, and the region of the substrate 310 other than the preparation region 3101 of the ramp structure is exposed. Optionally, the oxidation protection layer may use silicon nitride, and the oxidation protection layer may protect the silicon wafer 310 from being oxidized, and the embodiment of the present invention does not limit the material of the oxidation protection layer; the embodiment of the present invention does not limit the material of the silicon wafer, the silicon wafer 310 may also be an SOI silicon wafer, and fig. 11 only shows a schematic diagram of preparing the oxidation protection layer 20 for convenience of understanding, and does not show the structure of the silicon wafer 310 in detail.
As shown in fig. 12, the structure shown in fig. 11 is subjected to thermal oxidation treatment, the preparation region 3101 covered with the oxidation protective layer 20 is not oxidized, and the exposed region not covered with the oxidation protective layer 20 is oxidation-etched to form an oxidation structure 30. Alternatively, the oxide structure is associated with a substrate structure, where the substrate structure may be a silicon wafer and the oxide structure may be silicon oxide.
As shown in fig. 12 and fig. 13, the area covered by the oxidation protection layer 20 is a preparation area 3101 of the ramp structure, the area covered by the oxidation structure 30 is a non-preparation area 3102 of the ramp structure, the oxidation protection layer 20 protects the preparation area 3101 from being etched by oxidation, the non-preparation area 3102 is thinned by oxidation, and after the oxidation protection layer 20 and the oxidation structure 30 are removed, the preparation area 3101 of the ramp structure is higher than the non-preparation area 3102 of the ramp structure.
In summary, the slope structure preparation area is covered by the oxidation protection layer, so that the slope structure preparation area is prevented from being oxidized, steps are formed in the slope structure preparation area and the non-slope structure preparation area, and the subsequent adjustment of the distance between the slope structure and the rotatable structure is facilitated.
Optionally, on the basis of the above embodiment, the method for manufacturing a rotating structure further includes:
the distance between the ramp structure and the rotatable structure is adjusted.
Illustratively, the driving voltage can be regulated and controlled by adjusting the distance between the slope structure and the rotatable structure, and the closer the distance between the slope structure and the rotatable structure is, the larger the driving force is, and the smaller the required driving voltage is; the further the distance between the ramp structure and the rotatable structure, the smaller the driving force and the larger the driving voltage required.
Further, adjusting the distance between the ramp structure and the rotatable structure may include a variety of different embodiments, as described below.
Optionally, the mask further includes an isolation mask structure located between the first exposure opening and the second exposure opening;
adjusting a distance between the ramp structure and the rotatable structure, comprising:
the distance between the ramp structure and the rotatable structure is adjusted by adjusting at least one of a thickness of the first oxide layer, a thickness of the oxide structure, and a width of the isolation mask structure.
Because the angle of the slope and the initial gap between the slope and the rotating structure determine the driving voltage, when the slope angle is 1 degree and the initial gap between the slope and the rotating structure is 0.5-1 μm, the driving voltage required for rotating 0.3 degree is 5-10V according to the simulation result.
As a possible implementation, the thickness of the first oxide layer 320 may affect the initial gap between the ramp structure and the rotatable structure, as shown in fig. 9, the thicker the first oxide layer 320, the farther the distance between the ramp structure and the rotatable structure is, the larger the initial gap between the ramp structure and the rotatable structure is; the thinner the first oxide layer 320, the closer the distance between the ramp structure and the rotatable structure, the smaller the initial gap between the two. Thus, the distance between the slope structure and the rotatable structure can be adjusted by adjusting the thickness of the first oxide layer.
As another possible implementation, the oxide etching depth of the oxide structure 30 may also affect the initial gap between the ramp structure and the rotatable structure, as shown in fig. 12 and 13, the deeper the oxide etching of the oxide structure 30, the larger the height difference between the preparation region 3101 and the non-preparation region 3102, and the smaller the initial gap between the ramp structure and the rotatable structure; the shallower the oxide etching of the oxidized structure 30, the smaller the difference in height between the prepared region 3101 and the non-prepared region 3102, the larger the initial gap between the ramp structure and the rotatable structure. Thus, the distance between the slope structure and the rotatable structure can be adjusted by adjusting the thickness of the oxidation structure.
As another possible implementation, the width of the isolation mask structure 213 may also affect the initial gap between the ramp structure and the rotatable structure, as shown in fig. 14, the dark regions of the first exposure opening 211 and the second exposure opening 212 on the reticle 210 are the isolation mask structures 213, if the isolation mask structures 213 are too narrow, the photolithography regions overlap, the ramp structure becomes short, and the initial gap between the ramp structure and the rotatable structure becomes large; by appropriately widening the isolation mask structure 213, the overlap area of the lithographic region is reduced, the ramp structure becomes higher, and the initial gap between the ramp structure and the rotatable structure becomes smaller. By adjusting the width of the isolation mask structure 213, the distance between the ramp structure and the rotatable structure may be adjusted.
In summary, the size of the slope structure can be controlled by adjusting the shape of the mask, and slope structures with different angles can be obtained by adjusting the moving speed of the substrate. In addition, the distance between the slope structure and the rotatable structure may be adjusted by adjusting at least one of a thickness of the first oxide layer, a thickness of the oxide structure, and a width of the isolation mask structure. The method provided by the embodiment of the invention is adopted to prepare the rotating structure, and the slope structure in the rotating structure is prepared by utilizing a mobile photoetching method, so that the preparation is simple, and the process cost is low; the inclination angle of the slope structure is adjustable, and the slope structure is flexible to prepare; the initial clearance between the slope structure and the rotatable structure is adjustable, so that the initial clearance can be reduced, and the driving voltage is reduced.
Next, the rotatable structure and the method of preparing the electrode structure are explained in two possible embodiments.
As a possible implementation manner, fig. 15 is a schematic flow chart of a manufacturing method of a third rotating structure provided in an embodiment of the present invention, and as shown in fig. 15, the manufacturing method of a rotating structure provided in an embodiment of the present invention may include:
s3001, providing a substrate and a mask, wherein the mask comprises a first exposure opening and a second exposure opening.
S3002, preparing a first oxide layer on one side of the substrate and patterning the first oxide layer, wherein the first oxide layer exposes the preparation area of the slope structure.
And S3003, preparing photoresist on the side of the first oxidation layer far away from the substrate and the exposed area of the first oxidation layer.
S3004, carrying out mask exposure on the photoresist through the mask plate and simultaneously moving the substrate at a constant speed so as to form a photoresist slope structure on the photoresist.
S3005, etching the substrate through the photoresist slope structure to form a slope structure on the substrate, wherein the slope structure comprises a first slope surface and a second slope surface.
S3006, providing a first semiconductor layer, and bonding the first semiconductor layer and the first oxide layer.
As shown in fig. 16, a first semiconductor layer 413 is provided, and the first semiconductor layer 413 and the first oxide layer 320 are bonded. Illustratively, the first semiconductor layer 413 has a first surface 4131 on an upper surface thereof and a second surface 4132 on a lower surface thereof, the second surface 4132 of the first semiconductor layer 413 is bonded to the first oxide layer 320, and the first surface 4131 of the first semiconductor layer 413 is thinned to a predetermined thickness after annealing and bonding. For example, when the first semiconductor layer 413 is silicon and the semiconductor layer 313 of the substrate 310 is silicon, silicon-silicon bonding may be performed between the first semiconductor layer 413 and the first oxide layer 320. Alternatively, the thickness of the first semiconductor layer 413 may be 10 to 100 μm, for example, 30 μm. Optionally, the thinning operation may adopt a polishing process, and the embodiment of the present invention does not limit the thinning method. It should be noted that fig. 16 only illustrates the first semiconductor layer 413 as a single-layer structure, and it is understood that, in order to ensure good surface smoothness of the first semiconductor layer 413 and small thickness of the first semiconductor layer 413, an SOI structure may be similarly selected, and the insulating layer and the substrate may be removed to obtain the independent first semiconductor layer 413.
S3007, patterning the first semiconductor layer to obtain a rotatable structure and a first electrode preparation window on the first semiconductor layer, wherein the first oxide layer is exposed on the first electrode preparation window.
As shown in fig. 17, the first semiconductor layer 413 is patterned to obtain the rotatable structure 2, and a first electrode preparation window 4133 is obtained in the first semiconductor layer 413, the first electrode preparation window 4133 exposing the first oxide layer 320. The vertical projection of the rotatable structure 2 on the substrate layer 310 has an overlap region with the vertical projections of the first sloped face 11 and the second sloped face 12 on the substrate layer 310; there is no overlap region between the perpendicular projection of the rotatable structure 2 on the substrate layer 310 and the perpendicular projection of the first oxide layer 320 on the substrate layer 310.
S3008, etching the first oxide layer through the first electrode preparation window to expose the substrate.
As shown in fig. 18, the first oxide layer 320 is etched through the first electrode preparation window 4133 to expose the substrate, exposing the semiconductor layer 313 of the substrate 310, facilitating the subsequent preparation of an electrode electrically connected to the ramp structure.
Optionally, etching the first oxide layer through the first electrode preparation window to expose the substrate includes:
and over-etching the first oxide layer through the first electrode preparation window, wherein the etching area of the first oxide layer is larger than the exposed area of the first electrode preparation window.
Illustratively, when the oxide layer is etched to expose the lower electrode window, due to the isotropic property of the oxide layer etching, the longitudinal etching depth is the same as the lateral etching depth, and excessive etching can be selectively performed, so that a portion of the first semiconductor layer 413 on the upper side of the first oxide layer 320 is suspended, as shown in fig. 18, when an electrode is subsequently prepared, the electrode layer is disconnected at the suspended position of the first semiconductor layer 413, thereby preventing the electrode plate from being short-circuited. Specifically, the depth of the lateral etching is 1-2 times of the thickness of the oxide layer, for example, the thickness of the oxide layer is 0.5um, and the depth of the lateral etching can be 0.5 um-1 um.
S3009, preparing a first electrode on the surface of the substrate corresponding to the position of the first electrode preparation window, preparing a second electrode on the side of the rotatable structure far away from the substrate, and preparing a second electrode wiring terminal on the surface of the first semiconductor layer far away from the substrate, wherein the second electrode wiring terminal is electrically connected with the second electrode.
As shown in fig. 19, a first electrode 40 is prepared on the surface of the substrate corresponding to the position of the first electrode preparation window, a second electrode 50 is prepared on the side of the rotatable structure 2 away from the substrate, and a second electrode connection terminal 51 is prepared on the surface of the first semiconductor layer 413 away from the substrate, the second electrode connection terminal being electrically connected to the second electrode.
For example, the first electrode 40, the second electrode 50, and the second electrode connecting terminal 51 may be prepared by a metal thin film deposition and photolithography process, and the preparation process of the electrodes and the electrode connecting terminals is not limited in the embodiment of the present invention. The first electrode 40 inputs a first electrode signal, and the first electrode signal is directly conducted to the first electrode 41; meanwhile, a second electrode signal is input to the second electrode 50, the second electrode signal is transmitted to the second electrode 50 through the second electrode connection terminal 51, the first electrode 41 and the second electrode 50 generate an electrostatic force under the action of the first electrode signal and the second electrode signal, and the rotatable structure 2 rotates under the action of the electrostatic force to realize a corresponding function.
Optionally, preparing a first electrode on a surface of a corresponding substrate at a position of the first electrode preparation window, preparing a second electrode on a side of the rotatable structure away from the substrate, and preparing a second electrode connection terminal on a surface of the first semiconductor layer away from the substrate includes:
depositing a metal layer on one side of the first semiconductor layer, which is far away from the substrate, wherein the metal layer is disconnected at the position of the first electrode preparation window; the metal layer at the position of the first electrode preparation window is a first electrode, the metal layer at one side of the rotatable structure far away from the substrate is a second electrode, and the metal layer at one side of the first semiconductor layer far away from the substrate is a second electrode wiring terminal. Because the silicon on the oxide layer is partially suspended, the deposited metal can not cause the short circuit of the upper electrode and the lower electrode.
In the above embodiments, the processes for manufacturing the rotatable structure and the electrode structure are described by taking silicon-silicon bonding as an example, and the processes for manufacturing the rotatable structure and the electrode structure are described by taking aluminum-germanium bonding as an example.
Fig. 20 is a schematic flow chart of a fourth method for manufacturing a rotary structure according to an embodiment of the present invention, and as shown in fig. 20, the method for manufacturing a rotary structure according to an embodiment of the present invention includes:
s4001, providing a substrate and a mask, wherein the mask comprises a first exposure opening and a second exposure opening.
S4002, preparing a first oxide layer on one side of the substrate and patterning the first oxide layer, wherein the first oxide layer exposes the preparation area of the slope structure.
S4003, preparing photoresist on the side, away from the substrate, of the first oxidation layer and in the exposed area of the first oxidation layer.
S4004, performing mask exposure on the photoresist through the mask plate, and simultaneously moving the substrate at a constant speed to form a photoresist slope structure on the photoresist.
S4005, etching the substrate through the photoresist slope structure to form a slope structure on the substrate, wherein the slope structure comprises a first slope surface and a second slope surface.
S4006, preparing a second oxide layer on the substrate and the surface of the slope structure.
As shown in fig. 21, a second oxide layer 330 is formed on the surface of the substrate 310 and the slope structure 1. Illustratively, after the preparation process of the slope unit 1 is completed, the substrate structure 310 formed with the slope structure 1 is cleaned to remove surface impurities and the first oxide layer. Optionally, the substrate 310 may be a common silicon wafer, or a silicon wafer with an SOI structure, and the material and the structure of the substrate are not limited in the embodiment of the present invention.
S4007, preparing a first electrode, a first electrode connecting terminal and a first bonding terminal on the side, far away from the substrate, of the second oxide layer.
As shown in fig. 22, a first electrode 40, a first electrode connection terminal 41, and a first bonding terminal 42 are prepared on the side of the second oxide layer 330 remote from the substrate 310. Alternatively, metal thin film deposited aluminum may be used as the first electrode 40, the first electrode connection terminal 41, and the first bonding terminal 42.
S4008, providing a second semiconductor layer and preparing a second bonding terminal on one side surface of the second semiconductor layer.
S4009, bonding the first bonding terminal and the second bonding terminal.
S4010, thinning and patterning the second semiconductor layer to obtain a rotatable structure and expose the first electrode connecting terminal.
As shown in fig. 23, a second semiconductor layer 410 is provided and a second bonding terminal 52 is prepared on a surface of one side of the second semiconductor layer 410. As shown in fig. 23, 24 and 25, the first and second bonding terminals 42 and 52 are bonded; the second semiconductor layer 410 is thinned and patterned, resulting in a rotatable structure and exposing the first electrode connection terminal 41. Alternatively, the second bonding terminal 52 may be germanium metal, and the bonding manner of the first bonding terminal 42 and the second bonding terminal 52 may be aluminum-germanium bonding. Note that fig. 23 illustrates a structure in which the second semiconductor layer 410 is of an SOI type, and a single-layer structure may be similarly selected by obtaining the independent third semiconductor layer 410 by removing the insulating layer and the substrate after the bonding of the first bonding terminal 42 and the second bonding terminal 52 is completed, but the structure of the second semiconductor layer 410 is not limited in the embodiment of the present invention.
S4011, preparing a second electrode and a second electrode connecting terminal on the side, far away from the substrate, of the second semiconductor layer.
As shown in fig. 26, a second electrode 50 and a second electrode connection terminal 51 are prepared on the side of the semiconductor layer 413 of the second semiconductor layer away from the substrate 310. For example, the second electrode 50 and the second electrode connecting terminal 51 may be prepared by a metal thin film deposition and photolithography process, and the preparation process of the second electrode 50 and the second electrode connecting terminal 51 is not limited in the embodiment of the present invention. A first electrode signal is input to the first electrode 40 and is conducted to the first electrode 40 through a first electrode connection terminal 41; meanwhile, a second electrode signal is input to the second electrode 50, the second electrode signal is conducted to the second electrode through the second electrode connection terminal 51, the first electrode 40 and the second electrode 50 generate an electrostatic force under the action of the first electrode signal and the second electrode signal, and the rotatable structure 2 rotates under the action of the electrostatic force to realize a corresponding function.
The above embodiments illustrate the processes for manufacturing the rotatable structure and the electrode structure in two possible embodiments, and the embodiments of the present invention do not limit the specific processes for manufacturing the rotatable structure and the electrode structure, and other processes for manufacturing the rotatable structure and the electrode structure also fall within the scope of the embodiments of the present invention.
Optionally, the rotatable structure further comprises a drive flank.
Illustratively, the driving flanks are two sides of the central axis of the rotatable structure, as shown in fig. 27, the driving flanks can be added to increase the electrostatic driving force, and as shown in fig. 28, the shape of the driving flanks increases the area of the original driving flanks, which can increase the driving force and reduce the driving voltage.
Fig. 29 is a schematic structural diagram of a rotating structure provided in an embodiment of the present invention, and the rotating structure shown in fig. 29 is prepared by using the above-mentioned method for preparing a rotating structure, as shown in fig. 29, the rotating structure according to an embodiment of the present invention may further include a supporting frame 4 and a torsion beam 3; the part of the substrate outside the ramp structure 1 is the support frame 4 of the rotating structure. Exemplarily, the movable rotating structure 2, the slope structure 1 and the supporting frame 4 are all fabricated on the same substrate structure, and the substrate structure layer is used as a common bottom layer, and the movable rotating structure 2 and the slope structure 1 are located inside the supporting frame 4 structure; the movable rotating structure 2 comprises a first/second semiconductor layer and a second click electrode which is manufactured on the first/second semiconductor layer by adopting an MEMS (micro electro mechanical system) process; the slope structure 1 is manufactured below the movable rotating structure 2, two symmetrical slopes are formed on the surface, and the slope ridge line 13 is positioned right below or near the movable rotating structure.
As shown in fig. 29, the method for manufacturing the rotating structure may further include manufacturing a torsion beam 3, where one end of the torsion beam 3 is connected to the rotating structure 2, and the other end of the torsion beam 3 is connected to the supporting frame 4; and the torsion beam 3 is parallel to the combining ridge line 13 of the first and second slope surfaces 11 and 12. Illustratively, symmetrical torsion beams 3 are arranged on two sides of the movable rotating structure 2, one end of each torsion beam 3 is connected to the movable rotating structure 2 along the slope ridge line 13, and the other end of each torsion beam 3 is connected to the supporting frame structure 4. Specifically, the torsion beam can be prepared while the first semiconductor layer is etched to form the rotatable structure, so that the rotatable structure is prevented from being suspended.
The steps of the method for manufacturing a rotary structure are described in detail above, and the method for manufacturing a rotary structure provided by the embodiment of the invention can control the size of the slope structure by adjusting the shape of the mask, and can obtain slope structures with different angles by adjusting the moving speed of the substrate. In addition, the distance between the slope structure and the rotatable structure may be adjusted by adjusting at least one of a thickness of the first oxide layer, a thickness of the oxide structure, and a width of the isolation mask structure. The method provided by the embodiment of the invention is adopted to prepare the rotating structure, and the slope structure in the rotating structure is prepared by utilizing a mobile photoetching method, so that the preparation is simple, and the process cost is low; the inclination angle of the slope structure is adjustable, and the slope structure is flexible to prepare; the initial clearance between the slope structure and the rotatable structure is adjustable, so that the initial clearance can be reduced, and the driving voltage is reduced.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the specific embodiments described herein, and that the features of the various embodiments of the invention may be partially or fully coupled or combined with each other and may be coordinated with each other and technically driven in various ways. Numerous variations, rearrangements, combinations, and substitutions will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method for preparing a rotary structure, which is used for preparing an electrostatic driving rotary structure, is characterized in that the rotary structure comprises a slope structure and a rotatable structure;
the preparation method comprises the following steps:
providing a substrate and a mask plate, wherein the mask plate comprises a first exposure opening and a second exposure opening;
carrying out mask exposure on the substrate through the mask plate and simultaneously moving the substrate at a constant speed so as to form a slope structure on the substrate, wherein the slope structure comprises a first slope surface and a second slope surface;
preparing a rotatable structure and an electrode structure, the electrode structure comprising a first electrode and a second electrode, the first electrode being electrically connected with the ramp structure, the second electrode being electrically connected with the rotatable structure, the rotatable structure being configured to rotate in accordance with an electrostatic force between the first electrode and the second electrode.
2. The method according to claim 1, wherein the substrate is uniformly moved while being subjected to mask exposure by the mask plate to form a slope structure on the substrate, comprising:
preparing a first oxidation layer on one side of the substrate and patterning the first oxidation layer, wherein the first oxidation layer exposes the preparation area of the slope structure;
preparing photoresist on the side of the first oxidation layer far away from the substrate and the exposed area of the first oxidation layer;
carrying out mask exposure on the photoresist through the mask plate and simultaneously moving the substrate at a constant speed so as to form a photoresist slope structure on the photoresist;
and etching the substrate through the photoresist slope structure to form a slope structure on the substrate.
3. The method of claim 2, wherein the step of preparing the first oxide layer on the substrate side and patterning the first oxide layer further comprises:
preparing an oxidation protection layer on one side of the substrate and patterning the oxidation protection layer, wherein the oxidation protection layer covers a preparation area of the slope structure;
carrying out thermal oxidation treatment on the exposed area of the oxidation protection layer, wherein an oxidation structure is formed in the exposed area of the oxidation protection layer;
and removing the oxidation protection layer and the oxidation structure so that the surface of the preparation area of the slope structure is higher than the non-preparation area of the slope structure.
4. The method of manufacturing according to claim 3, further comprising:
adjusting a distance between the ramp structure and the rotatable structure.
5. The method of claim 4, wherein the reticle further comprises an isolation mask structure between the first exposure opening and the second exposure opening;
adjusting a distance between the ramp structure and the rotatable structure, comprising:
adjusting a distance between the ramp structure and the rotatable structure by adjusting at least one of a thickness of the first oxide layer, a thickness of the oxide structure, and a width of the isolation mask structure.
6. The method of claim 2, wherein preparing the rotatable structure and the electrode structure comprises:
providing a first semiconductor layer, and bonding the first semiconductor layer and the first oxide layer;
patterning the first semiconductor layer to obtain a rotatable structure and a first electrode preparation window on the first semiconductor layer, wherein the first oxide layer is exposed through the first electrode preparation window;
etching the first oxide layer through the first electrode preparation window to expose the substrate;
preparing a first electrode on the surface of the substrate corresponding to the position of the first electrode preparation window, preparing a second electrode on one side of the rotatable structure far away from the substrate, preparing a second electrode wiring terminal on the surface of one side of the first semiconductor layer far away from the substrate, and electrically connecting the second electrode wiring terminal with the second electrode.
7. The method of claim 6, wherein etching the first oxide layer through the first electrode preparation window to expose the substrate comprises:
over-etching the first oxide layer through the first electrode preparation window, wherein the etching area of the first oxide layer is larger than the exposed area of the first electrode preparation window;
preparing a first electrode on the surface of the substrate corresponding to the position of the first electrode preparation window, preparing a second electrode on one side of the rotatable structure far away from the substrate, and preparing a second electrode connection terminal on one side surface of the first semiconductor layer far away from the substrate, wherein the method comprises the following steps:
depositing a metal layer on one side of the first semiconductor layer, which is far away from the substrate, wherein the metal layer is disconnected at the position of the first electrode preparation window; the metal layer located at the position of the first electrode preparation window is the first electrode, the metal layer located on one side, away from the substrate, of the rotatable structure is the second electrode, and the metal layer located on one side, away from the substrate, of the first semiconductor layer is the second electrode wiring terminal.
8. The method of claim 2, wherein preparing the rotatable structure and the electrode structure comprises:
preparing a second oxide layer on the surface of the substrate and the slope structure;
preparing a first electrode, a first electrode wiring terminal and a first bonding terminal on one side of the second oxide layer away from the substrate;
providing a second semiconductor layer and preparing a second bonding terminal on one side surface of the second semiconductor layer;
bonding the first bonding terminal and the second bonding terminal;
thinning and patterning the second semiconductor layer to obtain the rotatable structure and expose the first electrode connection terminal;
and preparing a second electrode and a second electrode connecting terminal on the side of the second semiconductor layer far away from the substrate.
9. The method of claim 1, wherein the rotatable structure comprises a driving flank.
10. The method of manufacturing of claim 1, wherein the rotating structure further comprises a support frame and a torsion beam;
the part of the substrate outside the slope structure is a supporting frame of the rotating structure;
the preparation method further comprises the following steps:
preparing a torsion beam, wherein one end of the torsion beam is connected with the rotatable structure, and the other end of the torsion beam is connected with the supporting frame; and the torsion beam is parallel to the combined ridge line of the first slope surface and the second slope surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110582001.1A CN113307224A (en) | 2021-05-24 | 2021-05-24 | Preparation method of rotating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110582001.1A CN113307224A (en) | 2021-05-24 | 2021-05-24 | Preparation method of rotating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113307224A true CN113307224A (en) | 2021-08-27 |
Family
ID=77375272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110582001.1A Pending CN113307224A (en) | 2021-05-24 | 2021-05-24 | Preparation method of rotating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113307224A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2302264A1 (en) * | 1972-04-05 | 1973-10-25 | North American Rockwell | THICKNESS OXIDATION PROCESS TO IMPROVE METAL DEPOSIT AND STABILITY OF SEMICONDUCTOR FACILITIES |
| JPH08318386A (en) * | 1995-03-17 | 1996-12-03 | Ebara Corp | Method and device for machining by energy beam |
| US5742376A (en) * | 1993-04-28 | 1998-04-21 | Nikon Corporation | Projection exposure apparatus and projection exposure method |
| JP2004273666A (en) * | 2003-03-07 | 2004-09-30 | Nikon Corp | Aligner |
| JP2009188012A (en) * | 2008-02-04 | 2009-08-20 | Nsk Ltd | Aligner |
| CN101777485A (en) * | 2009-01-12 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching method |
| CN107946353A (en) * | 2017-11-22 | 2018-04-20 | 北京燕东微电子有限公司 | A kind of SiC Schottky diode and preparation method thereof |
| CN110217754A (en) * | 2019-06-12 | 2019-09-10 | 上海芯物科技有限公司 | A kind of rotational structure and preparation method thereof |
| CN110240116A (en) * | 2019-06-12 | 2019-09-17 | 上海芯物科技有限公司 | A kind of rotational structure and preparation method thereof |
-
2021
- 2021-05-24 CN CN202110582001.1A patent/CN113307224A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2302264A1 (en) * | 1972-04-05 | 1973-10-25 | North American Rockwell | THICKNESS OXIDATION PROCESS TO IMPROVE METAL DEPOSIT AND STABILITY OF SEMICONDUCTOR FACILITIES |
| US5742376A (en) * | 1993-04-28 | 1998-04-21 | Nikon Corporation | Projection exposure apparatus and projection exposure method |
| JPH08318386A (en) * | 1995-03-17 | 1996-12-03 | Ebara Corp | Method and device for machining by energy beam |
| JP2004273666A (en) * | 2003-03-07 | 2004-09-30 | Nikon Corp | Aligner |
| JP2009188012A (en) * | 2008-02-04 | 2009-08-20 | Nsk Ltd | Aligner |
| CN101777485A (en) * | 2009-01-12 | 2010-07-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Etching method |
| CN107946353A (en) * | 2017-11-22 | 2018-04-20 | 北京燕东微电子有限公司 | A kind of SiC Schottky diode and preparation method thereof |
| CN110217754A (en) * | 2019-06-12 | 2019-09-10 | 上海芯物科技有限公司 | A kind of rotational structure and preparation method thereof |
| CN110240116A (en) * | 2019-06-12 | 2019-09-17 | 上海芯物科技有限公司 | A kind of rotational structure and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 严庆文;张福学;吴立锋;刘宇;: "一种适用于旋转弹单通道控制的硅微机械陀螺仪", 中国惯性技术学报, no. 05, 15 October 2009 (2009-10-15), pages 99 - 103 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6300154B2 (en) | Method of manufacturing an apparatus controlling light | |
| KR100815752B1 (en) | Microelectrical mechanical structure optical modulator and optical display system | |
| JP4307813B2 (en) | Optical deflection method, optical deflection apparatus, method of manufacturing the optical deflection apparatus, optical information processing apparatus, image forming apparatus, image projection display apparatus, and optical transmission apparatus including the optical deflection apparatus | |
| KR100346876B1 (en) | Manufacturing method of digital micro-mirror device | |
| US5665997A (en) | Grated landing area to eliminate sticking of micro-mechanical devices | |
| US7135804B2 (en) | Micro-mirror with rotor structure | |
| US11294168B2 (en) | Process for manufacturing a MEMS micromirror device, and associated device | |
| US20020071171A1 (en) | Article comprising wedge-shaped electrodes | |
| CN105353506B (en) | Vertical comb teeth drives MOEMS micro mirror and preparation method thereof | |
| US20050046921A1 (en) | Spatial light modulator using an integrated circuit actuator and method of making and using same | |
| US20040190110A1 (en) | Deformable segmented MEMS mirror | |
| WO2006073111A1 (en) | Mirror device, mirror array, optical switch, mirror device manufacturing method and mirror substrate manufacturing method | |
| EP1364246A1 (en) | A method and a device for reducing hysteresis or imprinting in a movable micro-element | |
| CN110240116B (en) | Rotating structure and preparation method thereof | |
| EP1692550A2 (en) | Two dimensional spatial light modulator | |
| JP3723431B2 (en) | Micro electromechanical optical device | |
| CN103149682B (en) | Optically controlled deformable mirror device applied to wavefront phase calibration | |
| CN110217754B (en) | Rotating structure and preparation method thereof | |
| CN112010256A (en) | Micro-electro-mechanical system contactor spring | |
| JP5374860B2 (en) | Microactuator and manufacturing method thereof, microactuator array, microactuator device, optical device, display device, exposure apparatus, and device manufacturing method | |
| CN113307224A (en) | Preparation method of rotating structure | |
| KR20030067491A (en) | Resonant thermal out-of-plane buckle-beam actuator | |
| Dunayevsky et al. | MEMS spatial light modulator for phase and amplitude modulation of spectrally dispersed light | |
| JP4734122B2 (en) | Light modulation element, actuator, and driving method of actuator | |
| US7215461B1 (en) | MEMS devices with increased damping for suspended movable structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |