JPH08316778A - Mount structure for surface acoustic wave - Google Patents

Mount structure for surface acoustic wave

Info

Publication number
JPH08316778A
JPH08316778A JP7148200A JP14820095A JPH08316778A JP H08316778 A JPH08316778 A JP H08316778A JP 7148200 A JP7148200 A JP 7148200A JP 14820095 A JP14820095 A JP 14820095A JP H08316778 A JPH08316778 A JP H08316778A
Authority
JP
Japan
Prior art keywords
acoustic wave
surface acoustic
mounting
propagation path
wave device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7148200A
Other languages
Japanese (ja)
Inventor
Ryuichi Sada
龍一 佐田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsumi Electric Co Ltd
Original Assignee
Mitsumi Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsumi Electric Co Ltd filed Critical Mitsumi Electric Co Ltd
Priority to JP7148200A priority Critical patent/JPH08316778A/en
Publication of JPH08316778A publication Critical patent/JPH08316778A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE: To obtain the mount structure of the surface acoustic wave device with a structure by which a printed circuit board processed with recess especially is not required and a middle position of a surface acoustic wave propagation path of the surface acoustic wave device is connected to the printed circuit board. CONSTITUTION: A function side 1a of a device chip 1 forming a surface acoustic wave propagation path 4 is opposite to a mount side of a printed circuit board 5 on which components are mounted, and a vibration space is kept between the function side 1a and the mount side and the surrounding of the device chip 1 is coated by a sealing resin 9. In the mount structure of the surface acoustic wave device, a photo resist film 10 surrounding the surface acoustic wave propagation path 4 and lower than the height of the mount bump 6 of the surface acoustic wave propagation path 4 is formed to the function side 1a and a very small gap is formed between the mount side and the front side of the photo resist film 10 while the mount bump 6 is connected to a conductor layer 5a of the printed circuit board 5 and the sealing resin is terminated at the position of the photo resist film 10.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は弾性表面波フィルタ等と
して用いる表面弾性波デバイスに関し、特に、フェイス
ダウンボンディングにより回路基板に実装される形式の
表面弾性波デバイスの実装構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device used as a surface acoustic wave filter or the like, and more particularly to a mounting structure of a surface acoustic wave device of a type mounted on a circuit board by face down bonding.

【0002】[0002]

【従来の技術】周知のように、弾性表面波フィルタ等と
して用いられる表面弾性波デバイスは、図4に示すよう
な構造に製作される。即ち、例えばセラミックで構成さ
れるデバイスチップ1Aの機能面1aには対にされたく
し歯状電極2A,3Aにより表面波伝搬路4Aが形成さ
れ、プリント配線基板5A等の回路基板との接続のため
に実装用バンプ6Aが各くし歯状電極2A,3Aの端部
に配置される。
2. Description of the Related Art As is well known, a surface acoustic wave device used as a surface acoustic wave filter or the like has a structure as shown in FIG. That is, for example, the surface wave propagation path 4A is formed on the functional surface 1a of the device chip 1A made of ceramic by the paired comb-teeth-shaped electrodes 2A and 3A for connection with a circuit board such as a printed wiring board 5A. The mounting bumps 6A are arranged at the ends of the comb-shaped electrodes 2A and 3A.

【0003】そして、このような構造の表面弾性波デバ
イスをプリント配線基板5Aに搭載するには、図5に示
すように、前記機能面1aをプリント配線基板5Aに対
面させて表面弾性波デバイスの実装用バンプ6Aをプリ
ント配線基板5Aの導電層5aに接続させるけれども、
前記プリント配線基板5Aの表面波伝搬路対応部にはリ
セス7Aが形成されて機能面1aの振動を許容するキャ
ビテイ8Aが形成され、機能面1aへの湿気やほこり等
の侵入を防止するため、デバイスチップ1Aの周囲に封
止樹脂9Aが塗布されて気密封止が行われる。
In order to mount the surface acoustic wave device having such a structure on the printed wiring board 5A, as shown in FIG. 5, the functional surface 1a is opposed to the printed wiring board 5A and the surface acoustic wave device is Although the mounting bump 6A is connected to the conductive layer 5a of the printed wiring board 5A,
A recess 7A is formed in the surface wave propagation path corresponding portion of the printed wiring board 5A to form a cavity 8A which allows the vibration of the functional surface 1a to prevent invasion of moisture or dust into the functional surface 1a. The sealing resin 9A is applied to the periphery of the device chip 1A and hermetically sealed.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前述し
たような従来の表面弾性波デバイスの実装構造による
と、表面弾性波デバイスの実装のために特別にプリント
配線基板5Aの表面にリセス7Aを形成しなければなら
ないため、表面弾性波デバイスの搭載位置や表面弾性波
デバイスのサイズに応じた特別のプリント配線基板5A
を用意する必要があり、表面弾性波デバイスのサイズ変
更や回路基板のパターン変更に対応することが困難であ
った。
However, according to the conventional surface acoustic wave device mounting structure as described above, the recess 7A is specially formed on the surface of the printed wiring board 5A for mounting the surface acoustic wave device. It is necessary to provide a special printed wiring board 5A according to the mounting position of the surface acoustic wave device and the size of the surface acoustic wave device.
Therefore, it is difficult to cope with the size change of the surface acoustic wave device and the pattern change of the circuit board.

【0005】また、同実装構造では、表面弾性波デバイ
スの表面波伝搬路4Aの中央部はリセス7Aの中央に対
応するため、表面波伝搬路4Aの中央部に実装用バンプ
6Aを配置することは無理で、この理由から表面弾性波
デバイスの設計パターンが制限され、表面弾性波デバイ
スの設計が困難な場合があった。
Further, in the same mounting structure, since the central portion of the surface acoustic wave propagation path 4A of the surface acoustic wave device corresponds to the central portion of the recess 7A, the mounting bump 6A should be arranged at the central portion of the surface acoustic wave propagation path 4A. Is impossible, and for this reason, the design pattern of the surface acoustic wave device is limited, and it may be difficult to design the surface acoustic wave device.

【0006】本発明の目的は、以上に述べたような従来
の表面弾性波デバイスの実装構造の問題に鑑み、特別に
リセスを加工された回路基板を用いる必要がなく、表面
弾性波デバイスの表面波伝搬路中央部位置を回路基板に
接続できる構造の表面弾性波デバイスの実装構造を得る
にある。
In view of the problems of the conventional mounting structure of a surface acoustic wave device as described above, the object of the present invention is to eliminate the need to use a circuit board having a special recess, and to improve the surface of the surface acoustic wave device. To obtain a mounting structure of a surface acoustic wave device having a structure capable of connecting a central portion of a wave propagation path to a circuit board.

【0007】[0007]

【課題を解決するための手段】この目的を達成するた
め、本発明は、表面波伝搬路を形成するデバイスチップ
の機能面を、実装される回路基板の実装面に対面させ、
前記機能面と前記実装面との間に振動空間を保った状態
として、デバイスチップの周囲を封止樹脂で被覆する表
面弾性波デバイスの実装構造において、前記表面波伝搬
路を取り囲みかつ前記表面波伝搬路の実装用バンプより
も低いフォトレジスト被膜を前記機能面に形成し、回路
基板の導電層に前記実装用バンプを接続した状態で前記
フォトレジスト被膜の表面と前記実装面との間に僅かの
隙間を形成し、同フォトレジスト被膜の位置で前記封止
樹脂を終端させた表面弾性波デバイスの実装構造を提案
するものである。また、後述する本発明の好ましい実施
例においては、前述したフォトレジスト被膜は、前記表
面波伝搬路を取り囲む連続した枠状に形成されたもの、
前記表面波伝搬路を取り囲む不連続の点状または線状レ
ジスト膜からなるものが開示される。
In order to achieve this object, the present invention has a functional surface of a device chip forming a surface wave propagation path facing a mounting surface of a circuit board to be mounted,
In a mounting structure of a surface acoustic wave device in which a vibrating space is maintained between the functional surface and the mounting surface, the periphery of a device chip is covered with a sealing resin, and the surface wave propagation path is surrounded and the surface wave is surrounded. A photoresist film lower than the mounting bumps of the propagation path is formed on the functional surface, and with the mounting bumps connected to the conductive layer of the circuit board, there is a slight gap between the surface of the photoresist film and the mounting surface. The mounting structure of the surface acoustic wave device in which the gap is formed and the sealing resin is terminated at the position of the photoresist film is proposed. Further, in a preferred embodiment of the present invention described below, the photoresist coating described above is formed in a continuous frame shape surrounding the surface wave propagation path,
Disclosed is a resist film formed of a discontinuous dot or linear resist film surrounding the surface wave propagation path.

【0008】[0008]

【実施例】以下、図1から図3について本発明の実施例
の詳細を説明する。図1及び図2は本発明の第1実施例
を示し、この実施例においては、図1に示すような表面
弾性波デバイスが用いられる。即ち、例えばセラミック
で構成されるデバイスチップ1の機能面1aには対にさ
れたくし歯状電極2,3により表面波伝搬路4が形成さ
れ、各くし歯状電極2,3の端部のボンディングパッド
2a,3aには、プリント配線基板5等の回路基板との
接続のために、高さh1(図2図示)の実装用バンプ6
が周知の形成方法により配置される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the embodiments of the present invention will be described below with reference to FIGS. 1 and 2 show a first embodiment of the present invention, in which a surface acoustic wave device as shown in FIG. 1 is used. That is, a surface wave propagation path 4 is formed by a pair of comb-shaped electrodes 2 and 3 on a functional surface 1a of a device chip 1 made of, for example, ceramic, and bonding of end portions of the comb-shaped electrodes 2 and 3 is performed. The pads 2a and 3a have mounting bumps 6 having a height h1 (shown in FIG. 2) for connection with a circuit board such as a printed wiring board 5.
Are arranged by a known forming method.

【0009】また、前記デバイスチップ1の機能面1a
には前記表面波伝搬路4を取り囲む連続した矩形枠状の
高さh2なるフォトレジスト被膜10が例えば膜厚のあ
る層を形成可能な感光性ポリイミド樹脂を用いてフォト
レジスト法により形成される。このフォトレジスト被膜
10の高さh2は、図2に示すように、表面弾性波デバ
イスの実装用バンプ6を回路基板であるプリント配線基
板5の導電層5aに接続した際にプリント配線基板5の
表面との間に僅かの隙間を形成する目的から、実装用バ
ンプ6の高さh1と等しいか、または、同高さh1より
も小さな値に選ばれる。後述から理解されるように、前
述したフォトレジスト被膜10は、封止樹脂9の流入を
堰き止めてデバイスチップ1の機能面1aとプリント配
線基板5の実装面との間にキャビテイ8を形成する目的
であるから、かならずしも連続した枠状に形成する必要
はなく、例えば、枠状の仮想ピッチ線に沿って配列され
た点状または線状のフォトレジスト膜であってもよい。
Further, the functional surface 1a of the device chip 1
A photoresist film 10 having a height h2 in the shape of a continuous rectangular frame surrounding the surface wave propagation path 4 is formed by a photoresist method using, for example, a photosensitive polyimide resin capable of forming a thick layer. As shown in FIG. 2, the height h2 of the photoresist coating 10 is set so that when the mounting bumps 6 of the surface acoustic wave device are connected to the conductive layer 5a of the printed wiring board 5, which is a circuit board, the printed wiring board 5 has a height h2. For the purpose of forming a slight gap with the surface, the height is selected to be equal to or smaller than the height h1 of the mounting bumps 6. As will be understood later, the photoresist film 10 described above blocks the inflow of the sealing resin 9 to form the cavity 8 between the functional surface 1a of the device chip 1 and the mounting surface of the printed wiring board 5. Since it is the purpose, it is not always necessary to form it in a continuous frame shape, and it may be, for example, a dot-shaped or linear photoresist film arranged along a frame-shaped virtual pitch line.

【0010】図2は前述した表面弾性波デバイスを用い
てプリント配線基板5にデバイスチップ1を実装・封止
した状態を示し、同図から理解されるように、この実装
工程では、デバイスチップ1の機能面1aを導電層5a
が形成されるプリント配線基板5の実装面に対面させた
フェイスダウンボンディング手法が採用される。つま
り、プリント配線基板5の各導電層5aに対してはデバ
イスチップ1の対応実装用バンプ6がハンダや導電性レ
ジン等により接続され、この後、デバイスチップ1の周
囲にポッティングレジンとして知られる液状樹脂が塗布
され、同封止樹脂9によりプリント配線基板5とデバイ
スチップ1との間に形成されるキャビテイ8が気密封止
される。この場合、デバイスチップ1の周囲から機能面
1aの内部に流入する封止樹脂9は、表面張力によりプ
リント配線基板5の実装面とフォトレジスト被膜10の
間に形成された隙間に到達するが、同フォトレジスト被
膜10の位置で確実に堰き止められるため、デバイスチ
ップ1の機能面1aの表面波を抑制しないキャビテイ8
を形成できることになる。
FIG. 2 shows a state in which the device chip 1 is mounted and sealed on the printed wiring board 5 using the above-described surface acoustic wave device. As can be understood from this figure, in this mounting step, the device chip 1 is mounted. The functional surface 1a of the conductive layer 5a
A face-down bonding method is used which faces the mounting surface of the printed wiring board 5 on which is formed. That is, the corresponding mounting bumps 6 of the device chip 1 are connected to the respective conductive layers 5a of the printed wiring board 5 by solder, a conductive resin, or the like, and thereafter, a liquid known as potting resin is provided around the device chip 1. A resin is applied, and the sealing resin 9 hermetically seals the cavity 8 formed between the printed wiring board 5 and the device chip 1. In this case, the sealing resin 9 flowing from the periphery of the device chip 1 into the inside of the functional surface 1a reaches the gap formed between the mounting surface of the printed wiring board 5 and the photoresist film 10 due to surface tension, The cavity 8 that does not suppress the surface wave of the functional surface 1a of the device chip 1 because it is reliably blocked at the position of the photoresist film 10
Can be formed.

【0011】したがって、第1実施例の構造によると、
この構造では、プリント配線基板5の実装面に従来のよ
うなリセス7を形成することがないため、特定の表面弾
性波デバイスのために特別のプリント配線基板5を設計
する必要がなくなり、市販のプリント配線基板5で表面
弾性波デバイスの設計変更に容易に対応できる安価な実
装構造となる。また、使用するフォトレジスト被膜10
は、表面弾性波デバイスの製造工程途中で一括して形成
可能であるので、精密で、量産効果に富んだ構造とな
り、製品原価の削減を期待できる。
Therefore, according to the structure of the first embodiment,
In this structure, since the recess 7 unlike the conventional case is not formed on the mounting surface of the printed wiring board 5, there is no need to design a special printed wiring board 5 for a specific surface acoustic wave device, and a commercially available The printed wiring board 5 has an inexpensive mounting structure that can easily cope with the design change of the surface acoustic wave device. Also, the photoresist film 10 to be used
Can be formed all at once during the manufacturing process of the surface acoustic wave device, so that the structure has a precise structure and is highly effective for mass production, and a reduction in product cost can be expected.

【0012】なお、第1実施例の説明においては、液状
レジンを用いたものを説明したけれども、本発明の封止
樹脂9としては、所謂Bステージ状態の固形封止材の使
用も可能であるのは改めて説明するまでもない。
Although the liquid resin is used in the description of the first embodiment, a so-called B-stage solid encapsulating material can be used as the encapsulating resin 9 of the present invention. Needless to say again.

【0013】図3は本発明の第2実施例の図2対応断面
図であり、同図においては図2と同一構造部分について
は同一符号を付して示してある。第2実施例の特徴は、
二重の枠状に変形された第1フォトレジスト被膜10A
及び第2フォトレジスト被膜10Bにあり、これらのフ
ォトレジスト被膜10A,10Bによりキャビテイ8へ
の封止樹脂9の流入を阻止した点にある。つまり、これ
らの第1フォトレジスト被膜10A及び第2フォトレジ
スト被膜10Bによると、第1実施例の構造のものより
も、確実に封止樹脂9の流入を防止できるから、表面弾
性波デバイスの特性を充分に発揮させる実装構造を得る
ことができる。
FIG. 3 is a sectional view of a second embodiment of the present invention, corresponding to FIG. 2. In the figure, the same structural parts as those in FIG. 2 are designated by the same reference numerals. The feature of the second embodiment is that
Double-frame-shaped deformed first photoresist film 10A
And the second photoresist coating 10B, and these photoresist coatings 10A and 10B prevent the sealing resin 9 from flowing into the cavity 8. That is, according to the first photoresist film 10A and the second photoresist film 10B, the inflow of the sealing resin 9 can be prevented more reliably than that of the structure of the first embodiment, and therefore the characteristics of the surface acoustic wave device. It is possible to obtain a mounting structure that fully exerts the above.

【0014】図4は本発明の第3実施例を示し、例えば
セラミックで構成されるデバイスチップ21の機能面2
1aには対にされたくし歯状電極12,13,14,1
5,16,17により表面波伝搬路24が形成され、各
くし歯状電極12,13,14,15,16,17の端
部ボンディングパッド12a,13a,14a,15
a,16a,17aにはプリント配線基板5等の回路基
板との接続のために、高さh1(図2図示)の実装用バ
ンプ20が周知の形成方法により配置される。そして、
図4から理解されるように、この表面弾性波デバイスの
中央部にもボンディングパッド12b,17bが付加さ
れ、同ボンディングパッド12b,17bの表面にも付
加実装用バンプ20Bが配置されている。
FIG. 4 shows a third embodiment of the present invention, which is a functional surface 2 of a device chip 21 made of, for example, ceramic.
1a has a pair of comb-shaped electrodes 12, 13, 14, 1
5, 16 and 17 form the surface wave propagation path 24, and the end bonding pads 12a, 13a, 14a and 15 of the comb-shaped electrodes 12, 13, 14, 15, 16 and 17 are formed.
Mounting bumps 20 having a height h1 (shown in FIG. 2) are arranged on a, 16a, 17a by a known forming method for connection with a circuit board such as a printed wiring board 5. And
As understood from FIG. 4, the bonding pads 12b and 17b are added to the central portion of the surface acoustic wave device, and the additional mounting bump 20B is also arranged on the surfaces of the bonding pads 12b and 17b.

【0015】また、前記デバイスチップ21の機能面2
1aには前記表面波伝搬路24を取り囲む連続した矩形
枠状の高さh2なるフォトレジスト被膜22が上述の第
1実施例と同様の方法により形成される。このフォトレ
ジスト被膜22の高さh2は、図2に述べたように、表
面弾性波デバイスの実装用バンプ20を回路基板である
プリント配線基板5の導電層5aに接続した際にプリン
ト配線基板5の表面との間に僅かの隙間を形成する目的
から、実装用バンプ20の高さh1と等しいか、また
は、同高さh1よりも小さな値に選ばれる。この場合
も、フォトレジスト被膜22は、封止樹脂9の流入を堰
き止めてデバイスチップ21の機能面21aとプリント
配線基板5の実装面との間にキャビテイを形成する目的
であるから、かならずしも連続した枠状に形成する必要
はなく、例えば、枠状の仮想ピッチ線に沿って配列され
た点状または線状のフォトレジスト膜であってもよい。
The functional surface 2 of the device chip 21
A continuous rectangular frame-shaped photoresist coating 22 having a height h2 surrounding the surface wave propagation path 24 is formed on the la 1a by the same method as in the first embodiment. As shown in FIG. 2, the height h2 of the photoresist coating 22 is set so that the mounting bumps 20 of the surface acoustic wave device are connected to the conductive layer 5a of the printed wiring board 5 which is a circuit board. For the purpose of forming a slight gap with the surface of the mounting bump 20, the height is selected to be equal to or smaller than the height h1 of the mounting bump 20. In this case as well, the photoresist coating 22 is for the purpose of blocking the inflow of the sealing resin 9 to form cavities between the functional surface 21a of the device chip 21 and the mounting surface of the printed wiring board 5, and therefore is always continuous. It is not necessary to form the frame-shaped photoresist film, but for example, a dot-shaped or linear photoresist film arranged along the frame-shaped virtual pitch line may be used.

【0016】本実施例の実装工程でも、デバイスチップ
21の機能面21aを導電層5aが形成されるプリント
配線基板5の実装面に対面させたフェイスダウンボンデ
ィング手法が採用される。この場合、デバイスチップ2
1の周囲から機能面21aの内部に流入する封止樹脂9
は、表面張力によりプリント配線基板5の実装面とフォ
トレジスト被膜22の間に形成された隙間に到達する
が、同フォトレジスト被膜22の位置で確実に堰き止め
られるため、デバイスチップ21の機能面1aの表面波
を抑制しないキャビテイ8を形成できることになる。
Also in the mounting process of this embodiment, a face-down bonding method is used in which the functional surface 21a of the device chip 21 faces the mounting surface of the printed wiring board 5 on which the conductive layer 5a is formed. In this case, device chip 2
1. Sealing resin 9 flowing from the periphery of 1 into the inside of the functional surface 21a
Reaches the gap formed between the mounting surface of the printed wiring board 5 and the photoresist coating film 22 due to surface tension, but is reliably blocked at the position of the photoresist coating film 22, and thus the functional surface of the device chip 21. The cavity 8 that does not suppress the surface wave of 1a can be formed.

【0017】したがって、第3実施例の構造によると、
上述した第1実施例と同様な利点を有するが、その他に
表面弾性波デバイスの中央部にも付加実装用バンプを配
置できるから、表面弾性波もデバイスの設計自体の自由
度も増す利点がある。
Therefore, according to the structure of the third embodiment,
It has the same advantages as those of the first embodiment described above, but additionally has the advantage of increasing the degree of freedom in designing the surface acoustic wave and the device itself because the additional mounting bump can be arranged in the central portion of the surface acoustic wave device. .

【0018】[0018]

【発明の効果】以上の説明から明らかなように、本発明
によれば、回路基板に特別のリセス等を形成する必要が
ないから、市販の回路基板に表面弾性波デバイスを自由
に搭載できる実装構造となり、表面弾性波デバイスに形
成するフォトレジスト被膜は表面弾性波デバイスの製造
工程で一括形成できるため、量産効果に富んだ安価な構
造となる。
As is apparent from the above description, according to the present invention, it is not necessary to form a special recess or the like on the circuit board, so that the surface acoustic wave device can be freely mounted on the commercially available circuit board. As a result, the photoresist coating formed on the surface acoustic wave device can be collectively formed in the manufacturing process of the surface acoustic wave device, resulting in a mass-produced and inexpensive structure.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に用いる表面弾性波デバイスの全体斜視
図である。
FIG. 1 is an overall perspective view of a surface acoustic wave device used in the present invention.

【図2】本発明の第1実施例による表面弾性波デバイス
の実装構造の拡大断面図である。
FIG. 2 is an enlarged cross-sectional view of a surface acoustic wave device mounting structure according to a first embodiment of the present invention.

【図3】本発明の第2実施例による表面弾性波デバイス
の実装構造の拡大断面図である。
FIG. 3 is an enlarged sectional view of a surface acoustic wave device mounting structure according to a second embodiment of the present invention.

【図4】本発明の第3実施例による表面弾性波デバイス
の全体斜視図である。
FIG. 4 is an overall perspective view of a surface acoustic wave device according to a third embodiment of the present invention.

【図5】従来の表面弾性波デバイスの全体斜視図であ
る。
FIG. 5 is an overall perspective view of a conventional surface acoustic wave device.

【図6】従来の表面弾性波デバイスの実装構造の断面図
である。
FIG. 6 is a cross-sectional view of a conventional surface acoustic wave device mounting structure.

【符号の説明】[Explanation of symbols]

1,21 デバイスチップ 1a,21a 機能面 2,3,12,13,14,15,16,17 くし歯
状電極 4,24 表面波伝搬路 5 プリント配線基板 5a 導電層 6,6B,20,20B 実装用バンプ 8 キャビテイ 9 封止樹脂 10,10A,10B,22 フォトレジスト被膜
1,21 Device chip 1a, 21a Functional surface 2,3,12,13,14,15,16,17 Comb-shaped electrode 4,24 Surface wave propagation path 5 Printed wiring board 5a Conductive layer 6,6B, 20,20B Mounting bump 8 Cavity 9 Sealing resin 10, 10A, 10B, 22 Photoresist film

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 表面波伝搬路を形成するデバイスチップ
の機能面を、実装される回路基板の実装面に対面させ、
前記機能面と前記実装面との間に振動空間を保った状態
として、デバイスチップの周囲を封止樹脂で被覆する表
面弾性波デバイスの実装構造において、前記表面波伝搬
路を取り囲みかつ前記表面波伝搬路の実装用バンプより
も低いフォトレジスト被膜を前記機能面に形成し、回路
基板の導電層に前記実装用バンプを接続した状態で前記
フォトレジスト被膜の表面と前記実装面との間に僅かの
隙間を形成し、同フォトレジスト被膜の位置で前記封止
樹脂を終端させることを特徴とする表面弾性波デバイス
の実装構造。
1. A functional surface of a device chip forming a surface wave propagation path is made to face a mounting surface of a circuit board to be mounted,
In a mounting structure of a surface acoustic wave device in which a vibrating space is maintained between the functional surface and the mounting surface, the periphery of a device chip is covered with a sealing resin, and the surface wave propagation path is surrounded and the surface wave is surrounded. A photoresist film lower than the mounting bumps of the propagation path is formed on the functional surface, and with the mounting bumps connected to the conductive layer of the circuit board, there is a slight gap between the surface of the photoresist film and the mounting surface. Is formed, and the sealing resin is terminated at the position of the photoresist coating, the mounting structure of the surface acoustic wave device.
【請求項2】 前記フォトレジスト被膜は前記表面波伝
搬路を取り囲む連続した枠状に形成されることを特徴と
する請求項1記載の表面弾性波デバイスの実装構造。
2. The surface acoustic wave device mounting structure according to claim 1, wherein the photoresist coating is formed in a continuous frame shape surrounding the surface wave propagation path.
【請求項3】 前記フォトレジスト被膜は前記表面波伝
搬路を取り囲む不連続の点状または線状レジスト膜であ
ることを特徴とする請求項1記載の表面弾性波デバイス
の実装構造。
3. The mounting structure for a surface acoustic wave device according to claim 1, wherein the photoresist coating is a discontinuous point or linear resist film surrounding the surface wave propagation path.
JP7148200A 1995-05-23 1995-05-23 Mount structure for surface acoustic wave Pending JPH08316778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7148200A JPH08316778A (en) 1995-05-23 1995-05-23 Mount structure for surface acoustic wave

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7148200A JPH08316778A (en) 1995-05-23 1995-05-23 Mount structure for surface acoustic wave

Publications (1)

Publication Number Publication Date
JPH08316778A true JPH08316778A (en) 1996-11-29

Family

ID=15447504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7148200A Pending JPH08316778A (en) 1995-05-23 1995-05-23 Mount structure for surface acoustic wave

Country Status (1)

Country Link
JP (1) JPH08316778A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0840369A4 (en) * 1995-06-30 2001-12-19 Toshiba Kk Electronic component and method of production thereof
US6467139B1 (en) 1998-08-03 2002-10-22 Nec Corporation Mounting structure and mounting method for surface acoustic wave element
US6498422B1 (en) 1998-09-02 2002-12-24 Murata Manufacturing Co., Ltd. Electronic component such as an saw device and method for producing the same
US7034434B2 (en) 2002-06-03 2006-04-25 Murata Manufacturing Co., Ltd. Surface acoustic wave device
JP2006211612A (en) * 2005-01-31 2006-08-10 Sony Corp Saw device, communication module and manufacturing method of saw device
US7211934B2 (en) 2003-01-07 2007-05-01 Hitachi, Ltd. Electronic device and method of manufacturing the same
JP2008199664A (en) * 2002-06-03 2008-08-28 Murata Mfg Co Ltd Surface acoustic wave device
US7486160B2 (en) 2005-07-11 2009-02-03 Nihon Dempa Kogyo Co., Ltd. Electronic component and manufacturing method thereof
CN113452336A (en) * 2020-03-25 2021-09-28 三安日本科技株式会社 Elastic wave device package and module including elastic wave device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0840369A4 (en) * 1995-06-30 2001-12-19 Toshiba Kk Electronic component and method of production thereof
US6628043B2 (en) 1995-06-30 2003-09-30 Kabushiki Kaisha Toshiba Electronic component and method of production thereof
US6754950B2 (en) 1995-06-30 2004-06-29 Kabushiki Kaisha Toshiba Electronic component and method of production thereof
US6467139B1 (en) 1998-08-03 2002-10-22 Nec Corporation Mounting structure and mounting method for surface acoustic wave element
US6498422B1 (en) 1998-09-02 2002-12-24 Murata Manufacturing Co., Ltd. Electronic component such as an saw device and method for producing the same
JP2008219936A (en) * 2002-06-03 2008-09-18 Murata Mfg Co Ltd Surface acoustic wave device
JP2008199664A (en) * 2002-06-03 2008-08-28 Murata Mfg Co Ltd Surface acoustic wave device
US7034434B2 (en) 2002-06-03 2006-04-25 Murata Manufacturing Co., Ltd. Surface acoustic wave device
DE10392158B4 (en) * 2002-06-03 2011-10-27 Murata Manufacturing Co., Ltd. Surface acoustic wave device
US7211934B2 (en) 2003-01-07 2007-05-01 Hitachi, Ltd. Electronic device and method of manufacturing the same
JP2006211612A (en) * 2005-01-31 2006-08-10 Sony Corp Saw device, communication module and manufacturing method of saw device
US7486160B2 (en) 2005-07-11 2009-02-03 Nihon Dempa Kogyo Co., Ltd. Electronic component and manufacturing method thereof
CN113452336A (en) * 2020-03-25 2021-09-28 三安日本科技株式会社 Elastic wave device package and module including elastic wave device

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