JPH0738334A - Crystal oscillator - Google Patents
Crystal oscillatorInfo
- Publication number
- JPH0738334A JPH0738334A JP5181542A JP18154293A JPH0738334A JP H0738334 A JPH0738334 A JP H0738334A JP 5181542 A JP5181542 A JP 5181542A JP 18154293 A JP18154293 A JP 18154293A JP H0738334 A JPH0738334 A JP H0738334A
- Authority
- JP
- Japan
- Prior art keywords
- crystal oscillator
- crystal
- substrate
- crystal resonator
- wiring pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、時計等の基準信号発生
源として使用される水晶発振器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal oscillator used as a reference signal generating source for a timepiece or the like.
【０００２】[0002]
【従来の技術】時計等の精密機器に用いられる水晶発振
器は、機器の小形化にともない小形化・薄形化が要求さ
れている。この要求を満たすため、水晶発振器もＩＣや
水晶振動子を同一容器によって封止することが行われて
いる（例えば特開昭５７−９５７０３）。2. Description of the Related Art Crystal oscillators used in precision equipment such as watches are required to be smaller and thinner as the equipment becomes smaller. In order to meet this requirement, it has been practiced to seal an IC and a crystal oscillator in a crystal oscillator in the same container (for example, JP-A-57-95703).
【０００３】[0003]
【発明が解決しようとする課題】しかし、基板上にＩＣ
と水晶振動子とを別々に実装する場合には、どうしても
実装面積がそれだけ大きくなり、保護容器もそれに対応
して大きくなってしまうため、水晶発振器の小形化には
限界がある。However, the IC is mounted on the substrate.
If the crystal oscillator and the crystal oscillator are separately mounted, the mounting area inevitably increases, and the protective container also increases accordingly, so there is a limit to downsizing the crystal oscillator.
【０００４】そこで本発明の目的は、ＩＣの上面に水晶
振動子をこれと平行状態を保つように設けることによっ
て、水晶発振器の一層の小形化を実現することにある。Therefore, an object of the present invention is to realize a further miniaturization of a crystal oscillator by providing a crystal resonator on the upper surface of the IC so as to keep the crystal resonator in parallel therewith.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の水晶発振器は、配線パターンが設けてあ
る基板と、基板の上面の特定の配線パターンと接続され
たＩＣと、ＩＣの上面に設けてある接続パッド上にスタ
ッドバンプを介してＩＣと平行状態を保つように固定し
てある水晶振動子とを備えている。In order to achieve the above object, a crystal oscillator according to the present invention includes a substrate provided with a wiring pattern, an IC connected to a specific wiring pattern on the upper surface of the substrate, and an IC. And a crystal oscillator fixed on a connection pad provided on the upper surface of the crystal via a stud bump so as to maintain a parallel state with the IC.
【０００６】[0006]
【作用】ＩＣの上面に設けてある接続パッド上に、水晶
振動子がスタッドバンプを介して固定してあるので、基
板上における水晶振動子は占有場所を要しなくなり、水
晶発振器を小形化できる。また、水晶振動子がＩＣの上
面と平行状態を保つように固定してあるので、高さの面
でも大形化しないものとなる。Since the crystal unit is fixed on the connection pad provided on the upper surface of the IC through the stud bump, the crystal unit on the substrate does not need to be occupied and the crystal unit can be miniaturized. . In addition, since the crystal unit is fixed so as to maintain the parallel state with the upper surface of the IC, the crystal unit does not become large in height.
【０００７】[0007]
【実施例】以下本発明の一実施例について図面を参照し
て説明する。図１に示すように、セラミック製の基板１
の上面には、多数の回路パターン２が印刷技術等により
形成してある。各回路パターン２の一端は基板１の周辺
側に位置し、予め基板に埋め込まれたピン３と導通して
いる。多数の回路パターン２のうち、基板１の右端部に
位置するパターン２ａは、基板の中央部に長方形状に形
成されたダイボンディング用パターン２ｂと接続してい
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. As shown in FIG. 1, a ceramic substrate 1
A large number of circuit patterns 2 are formed on the upper surface of by using a printing technique or the like. One end of each circuit pattern 2 is located on the peripheral side of the substrate 1 and is electrically connected to the pins 3 embedded in the substrate in advance. Of the many circuit patterns 2, the pattern 2a located at the right end of the substrate 1 is connected to the die bonding pattern 2b formed in a rectangular shape in the center of the substrate.
【０００８】パターン２ｂの上面には、集積回路（以下
「ＩＣ」という。）４が固着してあり、ＩＣ４の上面に
は外周辺に沿って多数の接続パッド５が設けてある。各
接続パット５は、回路パターン２の内端部と金線または
アルミニウム線等のボンディングワイヤ６を介して接続
してある。An integrated circuit (hereinafter referred to as "IC") 4 is fixed on the upper surface of the pattern 2b, and a large number of connection pads 5 are provided on the upper surface of the IC 4 along the outer periphery. Each connection pad 5 is connected to the inner end of the circuit pattern 2 via a bonding wire 6 such as a gold wire or an aluminum wire.
【０００９】多数の接続パッド５のうち、ＩＣ４の一辺
の内側寄りに位置する２つの接続パッド上には、音叉形
の水晶振動子７がスタッドバンプ８を介して設けてあ
る。水晶振動子７は、根本部の下面でスタッドバンプ８
を介して、ＩＣ４の上面と平行状態を保つように片持ち
支持されている。A tuning fork-shaped crystal oscillator 7 is provided via a stud bump 8 on the two connection pads located on the inner side of one side of the IC 4 among the large number of connection pads 5. The crystal unit 7 has a stud bump 8 on the bottom surface of the root.
Is supported in a cantilever manner so as to maintain a parallel state with the upper surface of the IC 4.
【００１０】スタッドバンプ８は、金等の小球によって
構成され、この実施例ではそれぞれが特定の接続パッド
５上に予め形成してある。スタッドバンプ８と水晶振動
子７との接合は、水晶振動子の下面に設けてある金の電
極膜（図示略）とを接触させた状態の下で、高周波溶接
によって行われる。なお、スタッドバンプ８は、場合に
よっては水晶振動子７側に予め付着形成されることもあ
る。The stud bumps 8 are formed of small balls of gold or the like, and in this embodiment, each is formed in advance on a specific connection pad 5. The stud bump 8 and the crystal oscillator 7 are joined to each other by high-frequency welding under the condition that the gold electrode film (not shown) provided on the lower surface of the crystal oscillator is in contact with the stud bump 8. The stud bumps 8 may be attached and formed in advance on the crystal oscillator 7 side in some cases.
【００１１】基板１の上面の外周部には、予めメタライ
ジンク層９が形成してあり、これに封止キャップ（図示
略）の端部を当接して、周囲をはんだ付けし、ＩＣ４及
び水晶振動子７がまとめて同時に封止される。なお、封
止キャップの取り付けは、エポキシ樹脂等の接着剤を用
いて基板１上に接合してもよい。この場合は、メタライ
ジング層９は不要である。A metallization layer 9 is formed in advance on the outer peripheral portion of the upper surface of the substrate 1, and the end portion of a sealing cap (not shown) is brought into contact with this to solder the periphery, and the IC 4 and the crystal vibration. The child 7 is collectively and simultaneously sealed. The sealing cap may be attached to the substrate 1 by using an adhesive such as an epoxy resin. In this case, the metalizing layer 9 is unnecessary.
【００１２】なお、水晶振動子としては、小形化が容易
な音叉型を採用しているが、これ以外にも、棒状や円板
状等の水晶振動子を採用してもよい。また、上記実施例
は、基板１が封止容器の一構成要素を構成しているが、
ＩＣ４や水晶振動子７を実装した基板１をベースとキャ
ップとからなる封止容器内に収容するようにしてもよ
い。As the crystal unit, a tuning fork type, which can be easily miniaturized, is adopted, but other than this, a rod-shaped or disc-shaped crystal unit may be adopted. Further, in the above embodiment, the substrate 1 constitutes one component of the sealed container,
The substrate 1 on which the IC 4 and the crystal oscillator 7 are mounted may be housed in a sealed container including a base and a cap.
【００１３】[0013]
【発明の効果】本発明は、ＩＣの上面にスタッドバンプ
を介して、このＩＣと平行状態を保つように水晶振動子
が固定してあるので、基板上に水晶振動子の設置場所や
配線パターンを設ける必要がなくなるので水晶発振器を
小形化することができる。また、水晶振動子はスタッド
バンプを介して固定してあるので、両者の間隔を最短に
設置できるため水晶振動子の特性を向上させる効果があ
る。According to the present invention, since the crystal oscillator is fixed on the upper surface of the IC via the stud bump so as to be in parallel with the IC, the place where the crystal oscillator is installed and the wiring pattern are arranged on the substrate. Since it is unnecessary to provide the crystal oscillator, the crystal oscillator can be downsized. Further, since the crystal unit is fixed via the stud bumps, the space between the two units can be set to be the shortest, which has the effect of improving the characteristics of the crystal unit.
【図１】キャップを取り外した状態を示す斜視図であ
る。FIG. 1 is a perspective view showing a state in which a cap is removed.
１ 基板 ２ 配線パターン ４ ＩＣ ５ 接続パッド ７ 水晶振動子 ８ スタッドバンプ 1 substrate 2 wiring pattern 4 IC 5 connection pad 7 crystal unit 8 stud bump
Claims (1)
ＩＣと、 上記ＩＣの上面に設けてある接続パッド上に、スタッド
バンプを介して上記ＩＣと平行状態を保つように固定し
てある水晶振動子とを備えていることを特徴とする水晶
発振器。1. A substrate on which a wiring pattern is provided, an IC connected to the specific wiring pattern on the upper surface of the substrate, and a connection pad provided on the upper surface of the IC via a stud bump, A crystal oscillator, comprising: a crystal resonator fixed so as to maintain a parallel state with an IC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5181542A JPH0738334A (en) | 1993-07-22 | 1993-07-22 | Crystal oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5181542A JPH0738334A (en) | 1993-07-22 | 1993-07-22 | Crystal oscillator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0738334A true JPH0738334A (en) | 1995-02-07 |
Family
ID=16102608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5181542A Pending JPH0738334A (en) | 1993-07-22 | 1993-07-22 | Crystal oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0738334A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6022757A (en) * | 1997-03-28 | 2000-02-08 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method |
| US6410363B1 (en) | 1997-03-10 | 2002-06-25 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing same |
| US6538208B2 (en) | 2001-03-06 | 2003-03-25 | Citizen Watch Co., Ltd. | Package base for mounting electronic element, electronic device and method of producing the same |
| US7584661B2 (en) * | 2006-09-21 | 2009-09-08 | Fujitsu Limited | Tuning fork gyro sensor |
| JP2010034094A (en) * | 2008-07-24 | 2010-02-12 | Denso Corp | Circuit device |
| JP2012182765A (en) * | 2011-03-03 | 2012-09-20 | Seiko Epson Corp | Vibration device, manufacturing method of vibration device, and electronic apparatus |
-
1993
- 1993-07-22 JP JP5181542A patent/JPH0738334A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6410363B1 (en) | 1997-03-10 | 2002-06-25 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing same |
| US6911353B2 (en) | 1997-03-10 | 2005-06-28 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing same |
| US6022757A (en) * | 1997-03-28 | 2000-02-08 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method |
| US6346434B1 (en) | 1997-03-28 | 2002-02-12 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method |
| US6355542B1 (en) | 1997-03-28 | 2002-03-12 | Sanyo Electric Co., Ltd. | Semiconductor device and manufacturing method |
| US6538208B2 (en) | 2001-03-06 | 2003-03-25 | Citizen Watch Co., Ltd. | Package base for mounting electronic element, electronic device and method of producing the same |
| US7584661B2 (en) * | 2006-09-21 | 2009-09-08 | Fujitsu Limited | Tuning fork gyro sensor |
| JP2010034094A (en) * | 2008-07-24 | 2010-02-12 | Denso Corp | Circuit device |
| JP2012182765A (en) * | 2011-03-03 | 2012-09-20 | Seiko Epson Corp | Vibration device, manufacturing method of vibration device, and electronic apparatus |
| US9088262B2 (en) | 2011-03-03 | 2015-07-21 | Seiko Epson Corporation | Vibrating device, method for manufacturing vibrating device, and electronic apparatus |
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