JP4103325B2 - Crystal oscillator - Google Patents

Crystal oscillator Download PDF

Info

Publication number
JP4103325B2
JP4103325B2 JP2000334217A JP2000334217A JP4103325B2 JP 4103325 B2 JP4103325 B2 JP 4103325B2 JP 2000334217 A JP2000334217 A JP 2000334217A JP 2000334217 A JP2000334217 A JP 2000334217A JP 4103325 B2 JP4103325 B2 JP 4103325B2
Authority
JP
Japan
Prior art keywords
crystal oscillator
crystal
integrated circuit
circuit element
internal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000334217A
Other languages
Japanese (ja)
Other versions
JP2002141747A (en
Inventor
郁生 新倉
篤人 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2000334217A priority Critical patent/JP4103325B2/en
Publication of JP2002141747A publication Critical patent/JP2002141747A/en
Application granted granted Critical
Publication of JP4103325B2 publication Critical patent/JP4103325B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Oscillators With Electromechanical Resonators (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a crystal oscillator whose characteristic can be evaluated as a crystal vibrator single body that can realize downsizing and a low profile of its package. SOLUTION: The crystal oscillator is solidly assembled with integrated circuit element and a packaged crystal vibrator in a substrate. The integrated circuit element 4 is bare-chip-mounted on an internal electrode 2 consisting of a wire pattern formed on the circuit board 1 so as to straddle over the integrated circuit element 4 thereby mounting an external terminal 3 projected from the chip crystal vibrator 6 on the internal electrode 2.

Description

【０００１】
【発明の属する技術分野】
本発明は、回路基板上で集積回路素子とパッケージングされた水晶振動子を立体的に組み立てた水晶発振器に関する。
【０００２】
【従来の技術】
水晶発振器は水晶振動子と発振回路を組み合わせたものであり、通信、情報処理システムなどに要求される基準周波数を容易に供給するために利用されている。
【０００３】
従来の水晶発振器として、図２に示すようなものが知られている。絶縁基板１０の上面にキャン封止型水晶振動子１１と発振回路となる樹脂封止型集積回路装置１２を平面的に並列して実装している。絶縁基板１０上には金属キャップ１３を被せ、絶縁基板１０の下面には外部端子３が突出している。
【０００４】
このような水晶発振器はあらかじめパッケージングされた状態の水晶振動子及び集積回路装置をユニット化しているため、近年、携帯電話など各種電子機器の小型化、薄型化に対応できないという不都合があった。
【０００５】
そこで、特開平１１−１８６８５０号公報に開示されているように水晶振動子及び集積回路を素子の状態でパッケージングしたチップ型水晶発振器が用いられるようになった。
【０００６】
図３はこのような水晶発振器の一例を示す断面図である。セラミック基体２１に形成したメタライズ層からなる内部電極２上に集積回路素子４を搭載し、ボンディングワイヤ２２により内部電極２と結線している。セラミック基体２１の段差に形成した内部電極２上には導電性接着剤２４により水晶片２３を支持している。セラミック基体２１は金属リング２５を介して金属キャップ１３を被せ、セラミック基体２１の下面にはメタライズ層からなる外部端子３を形成している。このような構造とすることにより水晶発振器の小型化、薄型化及び表面実装化を容易に実現している。
【０００７】
【発明が解決しようとする課題】
しかしながら上記説明した水晶発振器は、水晶片の状態でパッケージングするため周波数など特性を水晶発振器として組み立てた状態でしか評価することができない。このため、水晶片に特性不良がある場合には集積回路素子まで無駄になってしまい歩留まりが低下するという問題があった。また、パッケージングの工程で水晶片に特性不良が発生するという不都合もあった。
【０００８】
【課題を解決するための手段】
上記課題を解決するために本発明による水晶発振器は、回路部品や半導体チップ等の電子部品を実装した携帯電話の回路基板上で集積回路素子とパッケージングされた水晶振動子を立体的に組み立てた水晶発振器であって、平板状の前記回路基板に形成した内部電極上に集積回路素子をベアチップ実装し、前記水晶振動子が、該水晶振動子から下方に突出した外部端子と前記回路基板に形成した内部電極上とで、前記集積回路素子にまたがるように実装し、前記水晶振動子の下方及び周辺をアンダーフィルにより固定したことを特徴とする。
【０００９】
この本発明によれば、パッケージングされた水晶振動子単体で周波数などの特性評価が可能であるため、特性不良のない水晶振動子のみを使用して水晶発振器を組み立てることができ、歩留まりを向上させることができる。
【００１０】
また、集積回路素子と水晶振動子を立体的に並べ、水晶振動子が水晶発振器のキャップとしての役割も兼ねるため、水晶発振器の小型化、薄型化及び表面実装化を実現することができる。
【００１１】
水晶振動子は回路基板上にアンダーフィルなどの手段により固定することが好ましい。水晶振動子はあらかじめパッケージングされた状態で組み立てているため、水晶発振器として高度な気密を要求されることはない。
【００１２】
【発明の実施の形態】
以下、本発明の一実施形態について図面を参照しながら説明する。
【００１３】
図１は本実施形態による水晶発振器の断面図である。１は携帯電話など各種電子機器の回路基板であり、回路部品や半導体チップ等の電子部品を実装している。この回路基板１に形成した配線パターンからなる内部電極２上に集積回路素子４のバンプ電極５を熱圧着してベアチップ実装している。集積回路素子４の上方にはチップ型水晶振動子６を立体的に固定している。チップ型水晶振動子６の下方に突出した外部端子３は集積回路素子４にまたがるようにして、回路基板１の内部電極２上に実装している。チップ型水晶振動子６の下方及び周辺はアンダーフィル７により固定している。
【００１４】
本実施の形態では、水晶発振器の全高を１．０ｍｍと薄型化することができた。本実施形態ではアンダーフィルにより水晶振動子を固定したがこれに限ることなくＣＳＰ実装技術を応用してプリント基板上に水晶振動子を固定することができる。
【００１５】
【発明の効果】
以上説明したように本発明によれば、水晶発振器を組み立てる前に水晶振動子単体として特性評価することができるため、水晶発振器としての歩留まりを向上させることができる。
【００１６】
また、水晶発振器の小型化、薄型化及び表面実装化を実現することができる。
【図面の簡単な説明】
【図１】本発明の一実施形態による水晶発振器の断面図
【図２】従来の水晶発振器の断面図
【図３】従来のチップ型水晶発振器の断面図
【符号の説明】
１ 回路基板
２ 内部電極
３ 外部端子
４ 集積回路素子
５ バンプ電極
６ チップ型水晶振動子
７ アンダーフィル
１０ 絶縁基板
１１ キャン封止型水晶振動子
１２ 樹脂封止型集積回路装置
１３ 金属キャップ
２１ セラミック基体
２２ ボンディングワイヤ
２３ 水晶片
２４ 導電性接着剤
２５ 金属リング[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a crystal oscillator in which a crystal resonator packaged with an integrated circuit element on a circuit board is three-dimensionally assembled.
[0002]
[Prior art]
A crystal oscillator is a combination of a crystal resonator and an oscillation circuit, and is used to easily supply a reference frequency required for communication, information processing systems, and the like.
[0003]
A conventional crystal oscillator as shown in FIG. 2 is known. A can-sealed crystal resonator 11 and a resin-sealed integrated circuit device 12 serving as an oscillation circuit are mounted on the upper surface of the insulating substrate 10 in parallel in a plane. A metal cap 13 is covered on the insulating substrate 10, and the external terminals 3 protrude from the lower surface of the insulating substrate 10.
[0004]
Since such a crystal oscillator unitizes a crystal resonator and an integrated circuit device that have been packaged in advance, in recent years, there has been a problem that it is not possible to cope with downsizing and thinning of various electronic devices such as mobile phones.
[0005]
Therefore, as disclosed in Japanese Patent Laid-Open No. 11-186850, a chip type crystal oscillator in which a crystal resonator and an integrated circuit are packaged in an element state has been used.
[0006]
FIG. 3 is a cross-sectional view showing an example of such a crystal oscillator. An integrated circuit element 4 is mounted on an internal electrode 2 made of a metallized layer formed on a ceramic substrate 21 and connected to the internal electrode 2 by a bonding wire 22. A crystal piece 23 is supported by a conductive adhesive 24 on the internal electrode 2 formed at the step of the ceramic substrate 21. The ceramic base 21 is covered with a metal cap 13 via a metal ring 25, and an external terminal 3 made of a metallized layer is formed on the lower surface of the ceramic base 21. With such a structure, the crystal oscillator can be easily reduced in size, thickness, and surface-mounted.
[0007]
[Problems to be solved by the invention]
However, since the crystal oscillator described above is packaged in a state of a crystal piece, characteristics such as frequency can be evaluated only in a state assembled as a crystal oscillator. For this reason, when the crystal piece has a characteristic defect, there is a problem that the integrated circuit element is wasted and the yield is lowered. In addition, there is a disadvantage that a characteristic defect occurs in the crystal piece during the packaging process.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, a crystal oscillator according to the present invention is a three-dimensional assembly of a crystal resonator packaged with an integrated circuit element on a circuit board of a mobile phone on which electronic components such as circuit components and semiconductor chips are mounted . A crystal oscillator, wherein an integrated circuit element is bare-chip mounted on an internal electrode formed on a flat circuit board , and the crystal oscillator is formed on an external terminal projecting downward from the crystal oscillator and the circuit board It is mounted on the internal electrode so as to straddle the integrated circuit element, and the lower portion and the periphery of the crystal resonator are fixed by underfill.
[0009]
According to the present invention, it is possible to evaluate characteristics such as frequency with a packaged crystal unit alone, so it is possible to assemble a crystal oscillator using only a crystal unit having no characteristic defects, and to improve the yield. Can be made.
[0010]
In addition, since the integrated circuit element and the crystal resonator are arranged three-dimensionally and the crystal resonator also serves as a cap for the crystal oscillator, the crystal oscillator can be reduced in size, thickness, and surface-mounted.
[0011]
The crystal resonator is preferably fixed on the circuit board by means such as underfill. Since the crystal unit is assembled in a prepackaged state, a high degree of airtightness is not required as a crystal oscillator.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
[0013]
FIG. 1 is a sectional view of the crystal oscillator according to the present embodiment. Reference numeral 1 denotes a circuit board of various electronic devices such as a mobile phone, on which electronic components such as circuit components and semiconductor chips are mounted. The bump electrode 5 of the integrated circuit element 4 is thermo-compressed and mounted on the internal electrode 2 made of a wiring pattern formed on the circuit board 1 by bare pressing. A chip-type crystal resonator 6 is three-dimensionally fixed above the integrated circuit element 4. The external terminal 3 protruding downward from the chip-type crystal resonator 6 is mounted on the internal electrode 2 of the circuit board 1 so as to straddle the integrated circuit element 4. The lower part and the periphery of the chip-type crystal unit 6 are fixed by an underfill 7.
[0014]
In the present embodiment, the overall height of the crystal oscillator can be reduced to 1.0 mm. In this embodiment, the crystal resonator is fixed by underfill. However, the present invention is not limited to this, and the crystal resonator can be fixed on the printed circuit board by applying the CSP mounting technique.
[0015]
【The invention's effect】
As described above, according to the present invention, it is possible to evaluate the characteristics of the crystal resonator as a single unit before assembling the crystal oscillator, and therefore it is possible to improve the yield of the crystal oscillator.
[0016]
Further, the crystal oscillator can be reduced in size, thickness, and surface mounting.
[Brief description of the drawings]
1 is a cross-sectional view of a crystal oscillator according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a conventional crystal oscillator. FIG. 3 is a cross-sectional view of a conventional chip-type crystal oscillator.
DESCRIPTION OF SYMBOLS 1 Circuit board 2 Internal electrode 3 External terminal 4 Integrated circuit element 5 Bump electrode 6 Chip type crystal oscillator 7 Underfill 10 Insulating substrate 11 Can sealing type crystal oscillator 12 Resin sealing type integrated circuit device 13 Metal cap 21 Ceramic substrate 22 Bonding wire 23 Crystal piece 24 Conductive adhesive 25 Metal ring

Claims (1)

回路部品や半導体チップ等の電子部品を実装した携帯電話の回路基板上で、集積回路素子とパッケージングされた水晶振動子を立体的に組み立てた水晶発振器であって、平板状の前記回路基板に形成した内部電極上に前記集積回路素子をベアチップ実装し、前記水晶振動子が、該水晶振動子から下方に突出した外部端子と前記回路基板に形成した内部電極上とで、前記集積回路素子にまたがるように実装し、前記水晶振動子の下方及び周辺をアンダーフィルにより固定したことを特徴とする水晶発振器。A crystal oscillator that three-dimensionally assembles a crystal resonator packaged with an integrated circuit element on a circuit board of a mobile phone on which electronic parts such as circuit parts and semiconductor chips are mounted, and is mounted on the flat circuit board. The integrated circuit element is bare-chip mounted on the formed internal electrode, and the crystal resonator includes an external terminal projecting downward from the crystal resonator and an internal electrode formed on the circuit board. A crystal oscillator, wherein the crystal oscillator is mounted so as to straddle, and a lower portion and a periphery of the crystal resonator are fixed by underfill .
JP2000334217A 2000-11-01 2000-11-01 Crystal oscillator Expired - Fee Related JP4103325B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000334217A JP4103325B2 (en) 2000-11-01 2000-11-01 Crystal oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000334217A JP4103325B2 (en) 2000-11-01 2000-11-01 Crystal oscillator

Publications (2)

Publication Number Publication Date
JP2002141747A JP2002141747A (en) 2002-05-17
JP4103325B2 true JP4103325B2 (en) 2008-06-18

Family

ID=18810177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000334217A Expired - Fee Related JP4103325B2 (en) 2000-11-01 2000-11-01 Crystal oscillator

Country Status (1)

Country Link
JP (1) JP4103325B2 (en)

Also Published As

Publication number Publication date
JP2002141747A (en) 2002-05-17

Similar Documents

Publication Publication Date Title
JP2004158753A (en) Lead frame material, manufacturing method, and semiconductor device and manufacturing method
JP2010050778A (en) Piezoelectric device
JP2004032323A (en) Surface mounting type piezoelectric oscillator and its manufacturing method
JPH11214596A (en) Semiconductor device and its manufacturing method and electronic apparatus
JP4273910B2 (en) Surface-mount type piezoelectric oscillator and manufacturing method thereof
JP4103325B2 (en) Crystal oscillator
US20040036546A1 (en) Surface-mount crystal oscillator
JP2002084138A (en) Chip-type crystal oscillator
JP3652102B2 (en) Electronic circuit module
JP2007060319A (en) Surface-mounted piezoelectric oscillator and its manufacturing method
JPH0738334A (en) Crystal oscillator
KR101133117B1 (en) Electronic-circuit module package
JPH11121641A (en) Semiconductor device and manufacture thereof
JP2002064333A (en) Piezoelectric oscillator
JP2002141748A (en) Crystal oscillator
JPH07212130A (en) Voltage controlled oscillator and its manufacture
JP2004363735A (en) Crystal oscillator and its manufacturing method
JP2002330050A (en) Hollow resin mold surface acoustic wave filter
JP4055521B2 (en) Component mounting structure
KR19980043253A (en) Chip on Board Semiconductor Chip Packages
JP2006086664A (en) Crystal vibrator, crystal oscillator, and assembling method for them, and mobile communication terminal
KR100501190B1 (en) A slim type crystal oscillator
WO2004054089A1 (en) Piezoelectric oscillator and production method thereof and portable phone device and electronic apparatus
JPH0577944U (en) Crystal oscillator
JP2005045500A (en) Surface-mounted piezoelectric oscillator, insulating substrate base material, and frequency adjusting method

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20050630

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060330

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060523

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060724

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070313

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070510

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080304

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080317

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110404

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120404

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees