JPH08315727A - Picture tube - Google Patents

Picture tube

Info

Publication number
JPH08315727A
JPH08315727A JP17088296A JP17088296A JPH08315727A JP H08315727 A JPH08315727 A JP H08315727A JP 17088296 A JP17088296 A JP 17088296A JP 17088296 A JP17088296 A JP 17088296A JP H08315727 A JPH08315727 A JP H08315727A
Authority
JP
Japan
Prior art keywords
thin film
cathode
tungsten
oxide
impregnated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17088296A
Other languages
Japanese (ja)
Other versions
JP2713290B2 (en
Inventor
Yoshihiko Yamamoto
恵彦 山本
Isato Watabe
勇人 渡部
Tadanori Taguchi
貞憲 田口
Susumu Sasaki
進 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8170882A priority Critical patent/JP2713290B2/en
Publication of JPH08315727A publication Critical patent/JPH08315727A/en
Application granted granted Critical
Publication of JP2713290B2 publication Critical patent/JP2713290B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE: To provide a cathode with excellent electron emission property in good reproducibility by bringing tungusten oxide into the thin film of an impregnated cathode and manually controlling the oxidation state of tungusten. CONSTITUTION: Cathode material 1 contains W porous base 2 with fixed porosity ratio and holes 3. The hole 3 are incorporated and impregnated with BaCo3 , CaCO3 , Al2 O3 as electron emission metarial at a preset mole ratio. Such pellets 1 are mounted on a Ta cup 4 and laser-welded to a Ta sleeve 5. Prior to vacuum sputtering evaporation, oxygen partial pressure in a container is kept at a preset value and measured while bringing high purity oxygen through a gas guide. In this way, W in a thin film 8 is oxidized. A cathode with the thin film formed of W and SC2 O3 is thus obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は高電流密度カソード
として注目されている含浸形カソードを用いた高精細用
の受像管に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-definition picture tube using an impregnated cathode, which is drawing attention as a high current density cathode.

【0002】[0002]

【従来の技術】従来の受像管用の含浸形カソードは、特
開昭61−13526号公報(特願昭59−13314
9号)に記載のように、耐熱性多孔質基体の電子放出面
に高融点金属とSc又はScの酸化物もしくはその両者
とからなる薄膜を設けていた。
2. Description of the Related Art A conventional impregnated cathode for a picture tube is disclosed in Japanese Patent Application Laid-Open No. 61-13526 (Japanese Patent Application No. 59-13314).
No. 9), a thin film composed of a refractory metal and Sc or an oxide of Sc or both of them was provided on the electron emission surface of the heat resistant porous substrate.

【0003】[0003]

【発明が解決しようとする課題】上記従来のカソードで
は、薄膜構成元素特にWの酸化状態は考慮されておら
ず、薄膜形成時の真空雰囲気等に対応してWの酸化の程
度が変化していた。
In the above-mentioned conventional cathode, the thin film constituent elements, particularly the oxidation state of W, are not taken into consideration, and the degree of W oxidation changes depending on the vacuum atmosphere during thin film formation. It was

【0004】本発明の目的は、このWの酸化状態を人為
的に制御することにある。
An object of the present invention is to artificially control the oxidation state of W.

【0005】[0005]

【課題を解決するための手段】上記目的は、前記従来の
カソードを製作する際の薄膜付着形成時によく制御され
た酸素ガス,水蒸気等酸化性のガスまたは蒸気を導入す
ることにより達成される。また上記目的は予め酸化した
W粉または板をスパッタ蒸着時のターゲットとして用い
ることによっても達成される。
The above object is achieved by introducing an oxygen gas, an oxidizing gas such as water vapor, or a well-controlled oxidizing gas or vapor at the time of depositing a thin film in manufacturing the conventional cathode. The above object can also be achieved by using pre-oxidized W powder or a plate as a target during sputter deposition.

【0006】[0006]

【作用】含浸形カソードの電子放出特性は、カソード表
面の仕事関数によって支配される。仕事関数はカソード
最表面の原子群の配置によって決定される。
The electron emission characteristics of the impregnated cathode are governed by the work function of the cathode surface. The work function is determined by the arrangement of atomic groups on the outermost surface of the cathode.

【0007】WとSc23の混合薄膜を被覆したカソー
ドの最表面は理想的にはBa,Sc及びOからなる単分
子層が混在する。この単分子層の構成元素であるSc及
びOは被覆混合薄膜より、またBaは下地の通常の含浸
形カソードより補給され、カソード動作時はこれらの元
素の供給と蒸発が平衡して定常状態になる。
On the outermost surface of the cathode coated with a mixed thin film of W and Sc 2 O 3 , ideally, a monomolecular layer composed of Ba, Sc and O is mixed. The constituent elements of this monomolecular layer, Sc and O, are replenished from the coating mixed thin film, and Ba is replenished from the normal impregnated cathode of the base, and during the cathode operation, the supply and evaporation of these elements are in equilibrium and a steady state is achieved. Become.

【0008】このうちOは薄膜中のWの酸化物(W
3)やSc23の分解によって補給される。特に初期
の単分子層形成時には多量のOが要求される為、W酸化
物の存在が不可欠となる。
Of these, O is an oxide of W in the thin film (W
It is supplied by the decomposition of O 3 ) and Sc 2 O 3 . In particular, the presence of W oxide is indispensable because a large amount of O is required at the initial formation of the monolayer.

【0009】薄膜形成後、カソードを一旦大気にさらす
ことによりW酸化物は容易に表面に形成されるが、この
酸化物層の厚さは極めて薄く、十分なOの補給源となり
得ない。本発明は、このW酸化物を制御して人為的に形
成せしめるものである。
After the thin film is formed, the W oxide is easily formed on the surface by exposing the cathode to the atmosphere once, but the thickness of this oxide layer is extremely thin, and it cannot be a sufficient source of O 2 supply. The present invention controls and artificially forms the W oxide.

【0010】[0010]

【実施例】以下、本発明の一実施例を図1により説明す
る。図1は本発明による含浸形カソードを模式図的に示
した断面図である。図において、1はカソード材料のペ
レット(1.4φ)であり、空孔率20〜25%の多孔
質のW基体2と空孔3とから形成されている。なお多孔
質基体として、Mo,Ir,Pt,Re等及びこれらの
合金を用いても良い。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a sectional view schematically showing an impregnated cathode according to the present invention. In the figure, reference numeral 1 is a cathode material pellet (1.4φ), which is formed of a porous W substrate 2 and pores 3 having a porosity of 20 to 25%. As the porous substrate, Mo, Ir, Pt, Re or the like and alloys thereof may be used.

【0011】空孔3中には電子放出材料としてBaCO
3,CaCO3,Al23をモル比で4:1:1の割合に
配合したものを含浸した。なお異なったモル比の材料
や、異る材料を添加した電子放出材料を用いても良い。
このペレット1をTaカップ4に装着し、その後Taカ
ップ4はTaスリーブ5にレーザ溶接される、レーザ溶
接の代りにロー材を用いても良い。カソードの加熱に
は、W芯線6をアルミナ被覆したヒータ7を用いて行
う。以上がBa補給源となる。Baの補給量は、加熱温
度に依存するが、電子放出材料のモル比を変えたり、ま
た基体材料中にZr,Hf,Ti,Cr,Mn,Si,
Al等の活性剤を含有せしめる事によっても調整でき
る。Sc23補給源として厚さ10nm〜1μmのWと
Sc23からなる薄膜8を真空スパッタ蒸着法により付
着せしめた。Wの代りにMo,Re,Pt,Ir,Ta
等の金属あるいはこれらの合金を用いてもよい。
In the holes 3, BaCO is used as an electron emitting material.
Impregnation was carried out by mixing 3 , CaCO 3 and Al 2 O 3 in a molar ratio of 4: 1: 1. Note that materials having different molar ratios or electron-emitting materials to which different materials are added may be used.
The pellet 1 may be attached to the Ta cup 4, and then the Ta cup 4 may be laser-welded to the Ta sleeve 5. Instead of laser welding, a brazing material may be used. The heating of the cathode is performed using a heater 7 in which the W core wire 6 is coated with alumina. The above is the Ba supply source. The amount of replenishment of Ba depends on the heating temperature, but the molar ratio of the electron emission material is changed, or Zr, Hf, Ti, Cr, Mn, Si,
It can also be adjusted by including an activator such as Al. The Sc 2 O 3 W thick 10nm~1μm as makeup source and Sc 2 O 3 thin film 8 made from by adhering by vacuum sputtering deposition. Mo, Re, Pt, Ir, Ta instead of W
You may use metals, such as these, or these alloys.

【0012】なお、真空中スパッタ蒸着に先立ち、スパ
ッタ蒸着容器内の酸素分圧を1×10~5〜1×10~4
orrになるようにし、ガス導入器を通して高純度(9
9.9%)の酸素を導入し、容器内に装着した小型の質
量分析計にてその分圧を測定した。
Prior to the sputter deposition in vacuum, the oxygen partial pressure in the sputter deposition container is adjusted to 1 × 10 to 5 to 1 × 10 to 4 T.
orr and high purity (9
(9.9%) oxygen was introduced, and the partial pressure was measured by a small mass spectrometer mounted in the container.

【0013】この操作により、薄膜8中のWを酸化させ
ることが可能になる。またスパッタ蒸着の途中から予め
測定した分圧の酸素を導入し、薄膜8の一部分のみを酸
化することも可能である。導入ガスは酸素以外にも酸化
性ガスであれば用いることが出来る。
By this operation, W in the thin film 8 can be oxidized. It is also possible to introduce oxygen at a partial pressure measured in advance during the sputter deposition to oxidize only a part of the thin film 8. As the introduced gas, an oxidizing gas other than oxygen can be used.

【0014】このようなカソードを用い、カソード・ア
ノード2極管方式でアノードに幅5μS、くり返し10
0Hzの高圧パルスを印加して飽和電流密度を測定し
た。その結果を図2に示す。
Using such a cathode, the width of the anode is 5 μS and the repetition is 10
Saturation current density was measured by applying a high-voltage pulse of 0 Hz. The result is shown in FIG.

【0015】図中9が本発明によるWとSc23からな
る薄膜の被覆を行ったカソードの特性である。
Reference numeral 9 in the figure shows the characteristics of the cathode coated with a thin film of W and Sc 2 O 3 according to the present invention.

【0016】図中10は、薄膜の酸化処理の無いカソー
ドの特性である。なお図中11は、薄膜被覆を施してな
いカソードの特性を示す。
In the figure, 10 is the characteristic of the cathode without the oxidation treatment of the thin film. In the figure, 11 indicates the characteristics of the cathode not coated with a thin film.

【0017】[0017]

【発明の効果】本発明によれば、カソード最表面にB
a,Sc及びOからなる単分子層が安定に供給できるた
めに、電子放出特性の良いカソードを再現性良く得ら
れ、高精細な受像管を実現できる。
According to the present invention, B is formed on the outermost surface of the cathode.
Since a monomolecular layer composed of a, Sc and O can be stably supplied, a cathode having excellent electron emission characteristics can be obtained with good reproducibility, and a high-definition picture tube can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による含浸形カソードの一実施例の模式
図的断面図である。
FIG. 1 is a schematic sectional view of an embodiment of an impregnated cathode according to the present invention.

【図2】本発明による含浸形カソードと従来の含浸形カ
ソードの電子放出特性を比較した図である。
FIG. 2 is a diagram comparing electron emission characteristics of an impregnated cathode according to the present invention and a conventional impregnated cathode.

【符号の説明】[Explanation of symbols]

1…カソードペレット、2…W基体、3…空孔、4…T
aカップ、5…Taスリーブ、6…W芯線、7…アルミ
ナ被覆、8…薄膜、9…本発明による含浸形カソードの
電子放出特性、10…薄膜に酸化処理を行っていない従
来型の含浸形カソードの電子放出特性、11…薄膜被覆
の無い含浸形カソードの電子放出特性。
1 ... Cathode pellet, 2 ... W substrate, 3 ... Hole, 4 ... T
a cup, 5 ... Ta sleeve, 6 ... W core wire, 7 ... Alumina coating, 8 ... Thin film, 9 ... Electron emission characteristics of impregnated cathode according to the present invention, 10 ... Conventional impregnated type in which thin film is not subjected to oxidation treatment Electron emission characteristics of cathode, 11 ... Electron emission characteristics of impregnated cathode without thin film coating.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐々木 進 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Susumu Sasaki 1-280, Higashi Koigokubo, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】バリウムを含む電子放出物質が含浸された
耐熱多孔質体基体を準備する工程と、上記耐熱多孔質体
基体表面にスカンジウムおよびスカンジウムの酸化物か
らなる群から選ばれた少なくとも1種、タングステンお
よびタングステンの酸化物からなる薄膜を形成する工程
を有する製造方法により作製された含浸形カソードを用
いたことを特徴とする受像管。
1. A step of preparing a heat-resistant porous body substrate impregnated with an electron-emitting substance containing barium, and at least one selected from the group consisting of scandium and scandium oxide on the surface of the heat-resistant porous body substrate. A cathode ray tube using an impregnated cathode manufactured by a manufacturing method, which comprises a step of forming a thin film made of tungsten and an oxide of tungsten.
【請求項2】上記タングステンの酸化物は、上記薄膜形
成時の酸化性のガスの導入により、上記薄膜中のタング
ステンが酸化処理されて得られたものであることを特徴
とする請求項1記載の受像管。
2. The oxide of tungsten is obtained by oxidizing the tungsten in the thin film by introducing an oxidizing gas during the formation of the thin film. Picture tube.
【請求項3】上記タングステンの酸化物は、予め酸化し
たタングステン粉またはタングステン板をターゲットに
用いたスパッタ蒸着により得られたものであることを特
徴とする請求項1記載の受像管。
3. The picture tube according to claim 1, wherein the oxide of tungsten is obtained by sputter deposition using pre-oxidized tungsten powder or a tungsten plate as a target.
【請求項4】上記薄膜の厚さは10nm〜1μmである
ことを特徴とする請求項1乃至3のいずれか一項に記載
の受像管。
4. The picture tube according to claim 1, wherein the thin film has a thickness of 10 nm to 1 μm.
JP8170882A 1996-07-01 1996-07-01 Picture tube Expired - Fee Related JP2713290B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8170882A JP2713290B2 (en) 1996-07-01 1996-07-01 Picture tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8170882A JP2713290B2 (en) 1996-07-01 1996-07-01 Picture tube

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12100586A Division JPH0756776B2 (en) 1986-05-28 1986-05-28 Impregnated type cathode

Publications (2)

Publication Number Publication Date
JPH08315727A true JPH08315727A (en) 1996-11-29
JP2713290B2 JP2713290B2 (en) 1998-02-16

Family

ID=15913070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8170882A Expired - Fee Related JP2713290B2 (en) 1996-07-01 1996-07-01 Picture tube

Country Status (1)

Country Link
JP (1) JP2713290B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0756776A (en) * 1993-08-12 1995-03-03 Toshiba Corp Input/output system selection and monitoring device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0756776A (en) * 1993-08-12 1995-03-03 Toshiba Corp Input/output system selection and monitoring device

Also Published As

Publication number Publication date
JP2713290B2 (en) 1998-02-16

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