JPH03105827A - Impregnated type cathode - Google Patents
Impregnated type cathodeInfo
- Publication number
- JPH03105827A JPH03105827A JP1242006A JP24200689A JPH03105827A JP H03105827 A JPH03105827 A JP H03105827A JP 1242006 A JP1242006 A JP 1242006A JP 24200689 A JP24200689 A JP 24200689A JP H03105827 A JPH03105827 A JP H03105827A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- thin film
- impregnated
- layer
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 7
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 7
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 6
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims abstract description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- LDWUEXXONUJEKV-UHFFFAOYSA-N [W+4].[O-2].[Sc+3] Chemical compound [W+4].[O-2].[Sc+3] LDWUEXXONUJEKV-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000011148 porous material Substances 0.000 abstract description 3
- 239000012528 membrane Substances 0.000 abstract 5
- 238000010438 heat treatment Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Landscapes
- Solid Thermionic Cathode (AREA)
Abstract
Description
本発明は，高精細ブラウン管用等に使用される高電流密
度カソードに関するものである。The present invention relates to a high current density cathode used for high definition cathode ray tubes and the like.
表示管，ブラウン管，撮像管等の高精細化には高電流密
度の含浸形カソード、特にＳｃ系含浸形カソードが有望
視されているＳＳＣ系の含浸形カソードは、特開昭６３
−９１９２４号に示されるように、Ｗの焼結体の内部に
電子放出材料を含浸したカソード表面に、Ｗ及びＷとＳ
ｃを含む酸化物からなる薄膜層を設けている．上記カソ
ードは、動作時にカソード表面にＢａ，Ｓｃ及びＯから
なる低仕事関数の単分子ないし数分子程度の（Ｂａ：Ｓ
ｃ：Ｏ）複合層が形成されていることが特徴である。
Ｓｃ系含浸形カソードでは、ヒータで加熱することによ
り，下地カソード内で耐熱性多孔質体と電子放出物質が
反応し、生或したＢａが細孔内を通り表面に達する．ま
たＢａは薄膜層を通過するさせる．
従来のＷ及びＷとＳｃを含む酸化物からなる薄膜層を表
面に形成した含浸形カソードでは、（Ｂａ：ｓｃ：Ｏ）
複合層の構戊元素であるＳｃは、Ｂａが薄膜層を通過す
る際に生戒するＳｃのみであり、長時間動作させると薄
膜層部の変質とＢａの供給量の減少によってＳｃの生成
量が減少し、カソード表面の仕事関数が高くなり，電子
放出特性の低下につながった．Impregnated cathodes with high current density, especially Sc-based impregnated cathodes, are seen as promising for high-definition display tubes, cathode ray tubes, image pickup tubes, etc. SSC-based impregnated cathodes are described in Japanese Patent Laid-Open No. 63
As shown in No.-91924, W and W and S
A thin film layer made of an oxide containing c is provided. During operation, the cathode has a single molecule to several molecules of low work function consisting of Ba, Sc, and O (Ba:S) on the surface of the cathode.
c:O) It is characterized by the formation of a composite layer. In the Sc-based impregnated cathode, when heated with a heater, the heat-resistant porous material and the electron-emitting substance react within the underlying cathode, and the generated Ba passes through the pores and reaches the surface. In addition, Ba is allowed to pass through the thin film layer. In the conventional impregnated cathode in which a thin film layer made of W and an oxide containing W and Sc is formed on the surface, (Ba:sc:O)
Sc, which is a constituent element of the composite layer, is the only Sc that survives when Ba passes through the thin film layer.If operated for a long time, the amount of Sc produced will decrease due to deterioration of the thin film layer and a decrease in the amount of Ba supplied. decreased, the work function of the cathode surface increased, and the electron emission characteristics deteriorated.
上記従来技術による含浸形カソードは、動作時において
カソード表面に低仕事関数の（Ｂａ：ＳＣＯＯ）の複合
層を形成することによって電子放出特性を向上させてい
る．しかしながら長時間動作させると単分子複合Ｍ構戊
分子であるＳｃが減少し，電子放出特性の劣下が生じる
ため短寿命になるという問題があった．
本発明の目的は、Ｓｃが枯渇しない長寿命の含浸形カソ
ードを得ることにある．
［課題を解決するための手段】
上記目的は、Ｓｃを含む薄膜層を形成したＳｃ系の含浸
形カソードにおいて，上記薄Ｈ層の下部に新たにＳｃの
供給源として薄膜中間層を設けた新構成の含浸形カソー
ドにより達成される．The impregnated cathode according to the prior art has improved electron emission characteristics by forming a composite layer of (Ba:SCOO) with a low work function on the surface of the cathode during operation. However, when operated for a long time, Sc, which is a monomolecular composite M-structure molecule, decreases, resulting in a decrease in electron emission characteristics, resulting in a shortened lifespan. An object of the present invention is to obtain a long-life impregnated cathode that does not become depleted of Sc. [Means for Solving the Problems] The above object is to provide a new Sc-based impregnated cathode in which a thin film layer containing Sc is formed, in which a thin intermediate layer is newly provided as a supply source of Sc under the thin H layer. This is achieved by an impregnated cathode configuration.
あらかじめ薄膜層下部にＳｃの供給源として、カソード
動作中の加熱によりＳｃがカソード表面に偏析しやすい
混合物もしくは化合物を設けているため、（Ｂａ：Ｓｅ
：０）単分子複合層へのＳｃの供給が長時間安定に行わ
れ，寿命特性を向上することが可能となる．Since a mixture or compound that is likely to segregate Sc on the cathode surface due to heating during cathode operation is provided in advance as a supply source of Sc at the bottom of the thin film layer, (Ba:Se
:0) Sc is stably supplied to the monomolecular composite layer for a long time, making it possible to improve the life characteristics.
次に本発明の実施例を図表をもとに説明する．実施例１
第１図は本発明による含浸形カソードの断面図、第２図
はカソードの電子放出特性の経時変化を示す測定図であ
るウ
第１図において、カソードを形或する下地含浸形カソー
ドは、粒径５μｍのＷ絹をプレス或形し水素中で仮焼結
したのち真空中で焼結して作製し？空孔率２８％の多孔
質基体に、４ＢａＯ−ＡＩ，Ｏ，・ＣａＯの組或を有す
る電子放出物質を水素雰囲気中で溶融含浸させたもので
ある．上記下地含浸形カソード１を、カップ２に入れた
のちスリーブ３に挿入して、上記カップ２の下部にはス
リーブ３内に加熱用ヒータ４を設けている．さらに上記
下地含浸形カソード１の表面にＲｅと５重量％Ｓｃの混
合物からなる薄膜中間層５と、５重量％Ｓｃを含むＷと
Ｓ ｅ ａ Ｗ＝ Ｏ−ｘとからなる薄膜ＪＷ６を設け
ている，
この薄膜層５．６はスパッタリング装置を用いて形成し
た。また、膜組成は誘導結合プラズマ発光分析（ＩＣＰ
Ｓ法）及び蛍光Ｘｌｉ分析（ＦＬＸ法）によって求めた
。スパッタリング用のターゲットは、それぞれＲｅとＳ
ｃの混合物、Ｗ粉とＳｃ２Ｗ，Ｏ，■粉とを種々の組或
比で混合しブレス或形・焼結したものである。さらにＲ
ｅに対するＳｃｉＪｌ度を種々変えた。なお．ＲｅとＳ
ｃの混合物は真空焼結炉で１３００℃で約１時間処理を
行い合威した。
上記のようにして薄膜層５，６を形成した含浸形カソー
ドは、アルミナを′ｆＩＮ．覆したＷヒータ４を用いて
Ｉ Ｑ．’Ｔｏｒｒ台の真空容器内で約９００℃（輝度
温度）に加熱し、アノード及びカソードの平行平板から
なる２極形式でパルス電圧を印加し、電子放出能の測定
を行った。
第２図は種々の場合におけるカソードの動作温度９００
℃での電子放出特性である。含浸形カソード１の表面に
５重量％のＳｃを含むＷからなる薄膜層を３００ｎｍ形
成しただけの従来技術によるカソードの特性７と、上記
薄膜層下部に５重量％のＳｃ含むＲｅの薄膜中間層をｌ
ｏｏｎｍ形或した本実施例のカソードの特性８をそれぞ
れ示している．
本発明のカソードの特性は、薄膜中間Ｍ５を形成しない
従来カソードに比べ，初期において同等もしくは多少高
い値を示し、加熱処理に伴う電子放出特性の経時変化で
は、従来カソードより約１０倍程度良い特性を維持する
ことができた．カソード表面のＳｃ濃度の変化を、オー
ジェ分析法を用いて調べた．その結果、本発明のカソー
ドの表面Ｓｃ濃度は、１１５０℃で約５時間加熱すると
ほぼ一定値に達し，しかも１００ｈの加熱後においても
、加熱初期（１１５０℃，５ｈ）の値の８０％の濃度を
示した。これに対し、Ｓｃを含むＲｅの薄膜中間ＷＩ５
がない従来のカソードのＳｃ量はｉｏｏｈ加熱後におい
て３０％以下となった・
次に、薄膜中間ＩＷ５のＲｅ中のＳｃの組或をそれぞれ
１，５，１０，１５，２０，２５，３０重量％に変化さ
せたカソードの電子放出特性の測定を行った．その結果
を第ｌ表に示す．
上記カソードの特性は１〜２０重量％のＩ！ｉ囲おいて
はほとんど同等の特性を示すが、２５〜３０重量％の範
囲では逆に悪い特性を示した．一方、Ｓｃ量を１重量％
以下にすることはターゲット中のＳｃが不均一になり，
膜組成の均一性が低下する問題が生じた．
実施例２
実施例１の薄膜中間層５としてＳｅとＲｅの代わりにＳ
ｃを含むＯｓ，Ｒｕ，Ｗ，Ｐｔ，Ｔａ，ＭＯを用いた。
各薄膜中間層に含まれるＳｃの量は５重量％であった。
その時の電子放出特性の結果を第２表に示す。
示すことが確認された。しかしながらＳｃ量を変化させ
たところ、Ｏｓ，Ｒｕ，ＰｔについてはＲｅと同範囲で
高い特性を示したが、Ｗ ｔ Ｔ ａ ｊ ｔＭｏでは
１〜５重量％の範囲で同等の特性を示し、その最適範囲
が狭いことが分かった．
実施例３
実施例１のカソードにおいて、薄膜中間Ｎｊ５の膜厚が
それぞれ２０，５０，１００，２００，３００，４００
，５００，６００，７００ｎｍのカソードを作製し、電
子放出特性の測定を行った。
その結果を第３表に示す．
第２表は初期放出電流密度と１００ｈ加熱後の値を比較
を示しており、上記元素も同等の効果をこの結果によれ
ば，５０〜５００ｎｍの範囲で初期値・寿命特性とも実
施例１と同様な特性を示したが、５０ｎｍ以下では、初
期特性は良いものの加熱に伴う特性の劣下が大きく，ま
た５００ｎｍ以上では初期値・寿命特性とも上記の効果
が見られなかった．
実施例４
上記実施例１のカソードにおいて、薄膜中間層５を１０
０ｒｍｍとし、薄膜層６の膜厚をそれぞれ３０，５０，
１００，２００，３００，４００，５００，６００，８
００ｎｍのカソードを作製し、電子放出特性の測定を行
った。その結果を第４表に示す．
この結果によれば，５０〜５００ｎｍの範囲では．Ｓｃ
添加の効果が見られるものの、３０ｎｍ以下では上記カ
ソード特性に比べ加熱に伴う寿命特性の劣化が早《、６
００ｎｍ以上では、Ｓｃ添加の効果が見られなかった。
上記のとおり本発明のカソードにおいては、ＳＣ濃度の
減少は従来例に比較し少なく、カソード寿命は著しく改
善されることは明かである。Next, examples of the present invention will be explained based on diagrams. Example 1 FIG. 1 is a cross-sectional view of an impregnated cathode according to the present invention, and FIG. 2 is a measurement diagram showing changes over time in the electron emission characteristics of the cathode. is made by pressing or shaping W silk with a grain size of 5 μm, pre-sintering it in hydrogen, and then sintering it in vacuum. A porous substrate with a porosity of 28% is melted and impregnated with an electron-emitting material having a composition of 4BaO-AI,O,.CaO in a hydrogen atmosphere. The base-impregnated cathode 1 is placed in a cup 2 and then inserted into a sleeve 3, and a heater 4 is provided in the sleeve 3 at the bottom of the cup 2. Further, on the surface of the base-impregnated cathode 1, a thin film intermediate layer 5 made of a mixture of Re and 5% by weight Sc, and a thin film JW6 made of W containing 5% by weight Sc and S e a W = O-x are provided. This thin film layer 5.6 was formed using a sputtering device. In addition, the film composition was determined by inductively coupled plasma emission spectroscopy (ICP).
S method) and fluorescence Xli analysis (FLX method). The targets for sputtering are Re and S, respectively.
A mixture of W powder and Sc2W, O, and ■ powder is mixed in various ratios and pressed, shaped, and sintered. Further R
The SciJl degree for e was varied. In addition. Re and S
The mixture c was sintered in a vacuum sintering furnace at 1300° C. for about 1 hour. The impregnated cathode on which the thin film layers 5 and 6 were formed as described above was made of alumina of 'fIN. IQ. using the overturned W heater 4. It was heated to about 900° C. (brightness temperature) in a vacuum chamber on a Torr table, and a pulse voltage was applied in a two-pole format consisting of parallel plates of an anode and a cathode, and the electron emission ability was measured. Figure 2 shows the cathode operating temperature 900 in various cases.
This is the electron emission characteristic at °C. Characteristics 7 of a cathode according to the prior art in which a thin film layer of W containing 5% by weight of Sc is formed on the surface of the impregnated cathode 1 to a thickness of 300 nm, and a thin intermediate layer of Re containing 5% by weight of Sc below the thin film layer. l
Characteristics 8 of the cathode of the present embodiment in the oonm type are shown. The characteristics of the cathode of the present invention are the same or slightly higher at the initial stage compared to the conventional cathode that does not form the thin film intermediate M5, and the electron emission characteristics change over time due to heat treatment, which is about 10 times better than that of the conventional cathode. was able to maintain. Changes in the Sc concentration on the cathode surface were investigated using Auger analysis. As a result, the surface Sc concentration of the cathode of the present invention reaches a nearly constant value after heating at 1150°C for about 5 hours, and even after 100h of heating, the concentration remains 80% of the value at the initial stage of heating (1150°C, 5h). showed that. On the other hand, Re thin film intermediate WI5 containing Sc
The amount of Sc in the conventional cathode was 30% or less after iooh heating.Next, the amount of Sc in Re of thin film intermediate IW5 was 1, 5, 10, 15, 20, 25, and 30% by weight, respectively. The electron emission characteristics of the cathode were measured by changing the %. The results are shown in Table I. The characteristics of the above cathode are 1 to 20% by weight of I! In the range of 25 to 30% by weight, the properties were almost the same, but in the range of 25 to 30% by weight, the properties were worse. On the other hand, the amount of Sc was 1% by weight.
Doing the following will result in uneven Sc in the target,
A problem arose in which the uniformity of the film composition decreased. Example 2 As the thin film intermediate layer 5 of Example 1, S was used instead of Se and Re.
Os, Ru, W, Pt, Ta, and MO containing c were used. The amount of Sc contained in each thin film intermediate layer was 5% by weight. The results of the electron emission characteristics at that time are shown in Table 2. It was confirmed that However, when the amount of Sc was changed, Os, Ru, and Pt showed high properties in the same range as Re, but WtTajtMo showed the same properties in the range of 1 to 5% by weight. It turns out that the optimal range is narrow. Example 3 In the cathode of Example 1, the thickness of the thin film intermediate Nj5 is 20, 50, 100, 200, 300, and 400, respectively.
, 500, 600, and 700 nm cathodes were prepared and their electron emission characteristics were measured. The results are shown in Table 3. Table 2 shows a comparison between the initial emission current density and the value after 100 hours of heating. According to the results, the above elements have the same effect as Example 1 in terms of initial value and lifetime characteristics in the range of 50 to 500 nm. Similar characteristics were shown, but at a wavelength of 50 nm or less, the initial properties were good, but the properties deteriorated significantly with heating, and at a wavelength of 500 nm or more, the above-mentioned effects were not observed in both initial value and lifetime properties. Example 4 In the cathode of Example 1 above, the thin film intermediate layer 5 was
0 rpm, and the film thickness of the thin film layer 6 is 30, 50, and 30, respectively.
100, 200, 300, 400, 500, 600, 8
A 00 nm cathode was prepared and its electron emission characteristics were measured. The results are shown in Table 4. According to this result, in the range of 50 to 500 nm. Sc
Although the effect of addition can be seen, below 30 nm, the life characteristics deteriorate more quickly with heating than the cathode characteristics described above.
00 nm or more, no effect of Sc addition was observed. As described above, in the cathode of the present invention, it is clear that the SC concentration decreases less than in the conventional example, and the cathode life is significantly improved.
上記のように本発明による含浸形カソードは、耐熱多孔
質基体内の空孔部にＢａを含む電子放出物質を含浸した
カソード表面に、Ｗ及びＷとＳｃを含む酸化物からなる
薄Ｉ！！！層を形或する際に、ＳＣを含むＲｓ，Ｏｓ，
Ｒｕ，Ｎｉ，Ｐｔ，Ｗ，Ｔａ，Ｍｏなどの混合物もしく
は化合物を中間層に用いることにより、電子放出特性向
上に必要な（Ｂａ，Ｓｃ，Ｏ）の単分子複合層構成元素
であるＳｃをカソード表面に，供給しやすくしたもので
ある．従来カソードは下地カソードからＢａが表面に供
給され薄膜層と反応し、Ｓｃが生成されるが、長時間動
作させると薄膜層部の変質とＢａの供給量の減少によっ
てＳｃの生成量が減少し，短寿命になってしまった．し
かし、本発明のカソードにおいては、従来の薄膜層にさ
らにＳｃを表面に析出しやすい混合物もしくは化合物を
中間層に用いることにより、Ｂａと薄膜層の反応がなく
なってからも上記中間層からＳｃを表面に供給すること
ができ寿命特性の向上の効果がある。As described above, the impregnated cathode according to the present invention has a thin I. ! ! When forming the layer, Rs including SC, Os,
By using a mixture or compound of Ru, Ni, Pt, W, Ta, Mo, etc. in the intermediate layer, Sc, which is an element constituting a monomolecular composite layer of (Ba, Sc, O) necessary for improving electron emission characteristics, can be used as a cathode. This makes it easier to supply it to the surface. In the conventional cathode, Ba is supplied to the surface from the underlying cathode and reacts with the thin film layer to generate Sc, but when operated for a long time, the amount of Sc generated decreases due to deterioration of the thin film layer and a decrease in the amount of Ba supplied. , its lifespan has become short. However, in the cathode of the present invention, by using in the intermediate layer a mixture or compound that tends to precipitate Sc on the surface of the conventional thin film layer, Sc can be removed from the intermediate layer even after the reaction between Ba and the thin film layer has ceased. It can be supplied to the surface and has the effect of improving life characteristics.
第１図は、本発明の含浸形カソード断面の断面模式図、
第２図は、カソードの電子放出特性の経時変化を示す測
定図である．
符号の説明
１・・・含浸形基体，２・・・カップ，３・・・スリー
ブ，４・・・ヒータ，５・・・ＲｅとＳｃからなる薄膜
中間Ｍ，６・Ｗとｓ ｃｓＷ，Ｏ．，の薄膜層
０
第１図
第２図
５０
１００
熱処理時間（ｈ）FIG. 1 is a schematic cross-sectional view of the impregnated cathode of the present invention;
Figure 2 is a measurement diagram showing the change over time in the electron emission characteristics of the cathode. Explanation of symbols 1... Impregnated base, 2... Cup, 3... Sleeve, 4... Heater, 5... Thin film intermediate M, 6, W and s csW, O consisting of Re and Sc. ．． , thin film layer 0 Figure 1 Figure 2 50 100 Heat treatment time (h)
Claims (1)
記カソードの電子放出面に上記の電子放出面の仕事関数
を低下させる薄膜層としてタングステン（Ｗ）と酸化ス
カンジウム（Ｓｃ＿２Ｏ＿３）、タングステン酸化スカ
ンジウム（Ｓｃ＿２Ｗ＿３Ｏ＿１＿２もしくはＳｃ＿５
ＷＯ＿１＿２）の混合体からなる薄膜層が形成されてい
るカソードにおいて、上記基体と上記薄膜層との間にス
カンジウム（Ｓｃ）を含むＳｃ供給源の薄膜中間層を設
けたことを特徴とする含浸形カソード。 ２、特許請求の範囲第１項記載のカソードにおいて、上
記Ｓｃの供給源の薄膜中間層として、加熱することによ
ってＳｃがカソード表面に偏析する材料を用いることを
特徴とする含浸形カソード。 ３、特許請求の範囲第２項記載のカソードにおいて、上
記Ｓｃ供給源の薄膜中間層がＲｅ、Ｎｉ、Ｏｓ、Ｒｕ、
Ｐｔ、Ｗ、Ｔａ、Ｍｏのうち少なくとも一種とＳｃから
なる混合物もしくは化合物であることを特徴とする含浸
形カソード。 ４、特許請求の範囲第１項ないし第３項記載のカソード
において、上記Ｓｃの供給源の薄膜中間層の膜厚が５０
〜５００ｎｍであることを特徴とする含浸形カソード。 ５、特許請求の範囲第１項〜第４項記載のカソードにお
いて、上記仕事関数を低下させる薄膜層の膜厚が５０〜
５００ｎｍであることを特徴とする含浸形カソード。 ６、特許請求の範囲第１項〜第５項記載のカソードにお
いて、上記Ｓｃの供給源の薄膜中間層中のＳｃの含有量
が、Ｒｅ、Ｏｓ、Ｒｕ、Ｐｔの混合物もしくは化合物の
場合は１〜２０重量％、Ｎｉ、Ｗ、Ｔａ、Ｍｏとの混合
物もしくは化合物の場合は１〜５重量％であることを特
徴とする含浸形カソード。[Claims] 1. A heat-resistant porous metal substrate is impregnated with an electron-emitting substance, and tungsten (W) and scandium oxide ( Sc_2O_3), tungsten scandium oxide (Sc_2W_3O_1_2 or Sc_5
An impregnated type cathode having a thin film layer formed of a mixture of WO_1_2), characterized in that a thin film intermediate layer containing scandium (Sc) as a Sc source is provided between the base body and the thin film layer. cathode. 2. An impregnated cathode according to claim 1, characterized in that the Sc supply source thin film intermediate layer is made of a material that causes Sc to segregate on the cathode surface when heated. 3. In the cathode according to claim 2, the thin film intermediate layer of the Sc supply source includes Re, Ni, Os, Ru,
An impregnated cathode characterized in that it is a mixture or compound consisting of at least one of Pt, W, Ta, and Mo and Sc. 4. In the cathode according to claims 1 to 3, the thickness of the thin film intermediate layer of the Sc supply source is 50%.
An impregnated cathode characterized in that the wavelength is ~500 nm. 5. In the cathode according to claims 1 to 4, the thin film layer that lowers the work function has a thickness of 50 to 50.
An impregnated cathode characterized by a wavelength of 500 nm. 6. In the cathode according to claims 1 to 5, when the Sc content in the thin film intermediate layer as the Sc source is a mixture or compound of Re, Os, Ru, and Pt, the content is 1. -20% by weight, and in the case of a mixture or compound with Ni, W, Ta, Mo, 1 to 5% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1242006A JPH03105827A (en) | 1989-09-20 | 1989-09-20 | Impregnated type cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1242006A JPH03105827A (en) | 1989-09-20 | 1989-09-20 | Impregnated type cathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03105827A true JPH03105827A (en) | 1991-05-02 |
Family
ID=17082859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1242006A Pending JPH03105827A (en) | 1989-09-20 | 1989-09-20 | Impregnated type cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03105827A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6034469A (en) * | 1995-06-09 | 2000-03-07 | Kabushiki Kaisha Toshiba | Impregnated type cathode assembly, cathode substrate for use in the assembly, electron gun using the assembly, and electron tube using the cathode assembly |
| CN105803285A (en) * | 2016-03-21 | 2016-07-27 | 合肥工业大学 | Ultra-fine grain Sc2O3 doped W-based composite material and preparation method thereof |
-
1989
- 1989-09-20 JP JP1242006A patent/JPH03105827A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6034469A (en) * | 1995-06-09 | 2000-03-07 | Kabushiki Kaisha Toshiba | Impregnated type cathode assembly, cathode substrate for use in the assembly, electron gun using the assembly, and electron tube using the cathode assembly |
| US6304024B1 (en) | 1995-06-09 | 2001-10-16 | Kabushiki Kaisha Toshiba | Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity region |
| US6447355B1 (en) | 1995-06-09 | 2002-09-10 | Kabushiki Kaisha Toshiba | Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity region |
| CN105803285A (en) * | 2016-03-21 | 2016-07-27 | 合肥工业大学 | Ultra-fine grain Sc2O3 doped W-based composite material and preparation method thereof |
| CN105803285B (en) * | 2016-03-21 | 2017-08-11 | 合肥工业大学 | A kind of Ultra-fine Grained Sc2O3Adulterate W based composites and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR900009071B1 (en) | Impregnated cathode | |
| JPS58154131A (en) | Impregnation type cathode | |
| JP3137961B2 (en) | Electron emission electrode | |
| US4855637A (en) | Oxidation resistant impregnated cathode | |
| Hasker et al. | Scandium supply after ion bombardment on scandate cathodes | |
| JPH03105827A (en) | Impregnated type cathode | |
| KR920001334B1 (en) | Dispenser cathode | |
| JP3078287B1 (en) | Manufacturing method of electron emission material | |
| JP2585232B2 (en) | Impregnated cathode | |
| JP3137960B2 (en) | Electron emission material | |
| JPH0325824A (en) | Impregnated cathode | |
| JP2001006521A (en) | Cathode body structure and color picture tube | |
| JPH09129118A (en) | Cathode for electron tube | |
| JP2001167687A (en) | Electron-emitting material, electrode and discharge lamp | |
| JP3190320B2 (en) | Method for manufacturing electron emission material film | |
| JP4544868B2 (en) | Manufacturing method of electrode material for cold cathode fluorescent lamp and manufacturing method of discharge electrode | |
| KR920001333B1 (en) | Dispenser cathode | |
| JPH0927263A (en) | Cold cathode element | |
| JP3462818B2 (en) | Electron emitting material, method of manufacturing the same, electrode, and discharge lamp | |
| JP3424165B2 (en) | Phosphor manufacturing apparatus and phosphor manufacturing container | |
| JPH04286827A (en) | Impregnated cathode | |
| JPS62133632A (en) | Impregnated type cathode | |
| JPH08329837A (en) | Manufacture of impregnated cathode | |
| KR920004898B1 (en) | Impregnated ype cathode | |
| JPS6032232A (en) | Impregnated cathode |