JPH06124648A - Impregnated type cathode and electron tube using this - Google Patents

Impregnated type cathode and electron tube using this

Info

Publication number
JPH06124648A
JPH06124648A JP27403892A JP27403892A JPH06124648A JP H06124648 A JPH06124648 A JP H06124648A JP 27403892 A JP27403892 A JP 27403892A JP 27403892 A JP27403892 A JP 27403892A JP H06124648 A JPH06124648 A JP H06124648A
Authority
JP
Japan
Prior art keywords
cathode
tungsten
impregnated
impregnated cathode
type cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27403892A
Other languages
Japanese (ja)
Inventor
Susumu Sasaki
進 佐々木
Toshiyuki Aida
敏之 会田
Tomio Yaguchi
富雄 矢口
Emiko Yamada
絵実子 山田
Tadashi Narisei
正 成清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP27403892A priority Critical patent/JPH06124648A/en
Publication of JPH06124648A publication Critical patent/JPH06124648A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide an impregnated type cathode taking large current operation and low temperature operation, and a highly reliable electron tube using this. CONSTITUTION:In a Sc-coated impregnated type cathode having a porous base 1 of tungsten impregnated with an oxide 2 mainly containing barium, and a coat film 3 mainly consisting of tungsten and containing scandium formed on the upper surface, fine network cracks 4 are formed on the porous tungsten base. Since the barium is supplied to the coat film not only from the pore part of the porous body but also from the crack parts of the porous body, thus, the electron releasing characteristic of the Sc-coated impregnated type cathode is improved. Consequently, this cathode can be operated at a temperature lower than in a conventional Sc-coated impregnated type cathode.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はブラウン管,撮像管等の
電子管に係り、特に、大電流動作かつ低温動作をする含
浸形陰極に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron tube such as a cathode ray tube or an image pickup tube, and more particularly to an impregnated cathode which operates at a large current and a low temperature.

【0002】[0002]

【従来の技術】電子管の高出力化、たとえば、ブラウン
管の高輝度化,高精細化のためには大電流で動作しうる
陰極が必要である。一般に、このためには含浸形陰極が
用いられる。含浸形陰極の基本構成は、タングステンか
らなる多孔質基体に、BaOを主体に、他にAl23
CaOを水素雰囲気中または真空中で加熱溶融し、複合
酸化物として含浸したものである。この含浸した物質
は、一般に含浸剤と呼ばれる。多孔質タングステン基体
は、粒径1μmから10μmのタングステン粉末を、用
途に応じた大きさにプレス成形し、1500℃〜200
0℃で燒結したものである。
2. Description of the Related Art A cathode capable of operating with a large current is required to increase the output of an electron tube, for example, to increase the brightness and definition of a cathode ray tube. Impregnated cathodes are generally used for this purpose. The basic structure of the impregnated cathode is a porous substrate made of tungsten, which is mainly composed of BaO, and also Al 2 O 3 and CaO which are heated and melted in a hydrogen atmosphere or in a vacuum and impregnated as a composite oxide. . This impregnated material is commonly referred to as the impregnant. The porous tungsten substrate is formed by press-molding tungsten powder having a particle size of 1 μm to 10 μm into a size suitable for the application, and the temperature is 1500 ° C. to 200 ° C.
It was sintered at 0 ° C.

【0003】含浸形陰極は動作時に、常に1000℃程
度に加熱されており、タングステンと含浸剤は反応し、
バリウム原子を遊離する。バリウム原子は拡散により含
浸形陰極の表面に供給され、陰極内部または電子管内部
雰囲気中から供給された酸素原子と共に、陰極表面であ
るタングステン面に吸着する。このように、金属表面に
バリウム原子と酸素原子からなる吸着層が形成される
と、金属表面の仕事関数が引き下げられ、電子放出が容
易になる。これが、含浸形陰極の動作原理であり、これ
に対する詳細な考察は、例えば、ジャーナル・オブ・フ
ィジックス D:アプライド・フィジックス、第15巻
(1982年)第1519頁から第1519頁(J. Phys.
D: Appl. Phys., 15(1982)1519−152
9)に記載されている。
During operation, the impregnated cathode is constantly heated to about 1000 ° C., the tungsten reacts with the impregnating agent,
Release the barium atom. Barium atoms are supplied to the surface of the impregnated cathode by diffusion, and are adsorbed on the tungsten surface, which is the cathode surface, together with oxygen atoms supplied from the inside of the cathode or the atmosphere inside the electron tube. In this way, when the adsorption layer composed of barium atoms and oxygen atoms is formed on the metal surface, the work function of the metal surface is lowered, and the electron emission is facilitated. This is the principle of operation of the impregnated cathode, and detailed consideration therefor can be found in, for example, Journal of Physics D: Applied Physics, Volume 15 (1982), pages 1519 to 1519 (J. Phys.
D: Appl. Phys., 15 (1982) 1519-152.
9).

【0004】含浸形陰極は電子放出部分が基本的に金属
であるため、電気的な抵抗が小さい。そのため含浸形陰
極は、バリウムを主体とするアルカリ土類金属の酸化物
である、いわゆる、高抵抗な酸化物陰極のような、ジュ
ール発熱による陰極材料自体の分解に起因する陰極劣化
は生じない。
The impregnated cathode has a low electric resistance because the electron emitting portion is basically made of metal. Therefore, the impregnated cathode does not cause cathode deterioration due to decomposition of the cathode material itself due to Joule heat generation, unlike a so-called high-resistance oxide cathode which is an oxide of alkaline earth metal mainly containing barium.

【0005】しかし、含浸形陰極は、高電流密度での動
作が可能である反面、動作温度が酸化物陰極のおよそ7
50℃に比較して、高温で動作させる必要がある。前述
の基本構成の含浸形陰極の場合、空間電荷制限状態で1
0A/cm2 の電流密度を得るにはおよそ1100℃に加
熱する必要がある。
However, while the impregnated cathode can operate at a high current density, its operating temperature is about 7 times that of an oxide cathode.
It is necessary to operate at a high temperature as compared to 50 ° C. In the case of the impregnated cathode having the above-mentioned basic structure, 1 in the space charge limited state.
Heating to approximately 1100 ° C. is necessary to obtain a current density of 0 A / cm 2 .

【0006】このため、含浸形陰極の改良は、この動作
温度を低くすることを主目的に行われている。例えば、
前述の基本構成の含浸形陰極の表面にオスミウム,イリ
ジウムなどを被覆した含浸形陰極が開発され、その動作
温度はおよそ1000℃に低下した。これに関して、ア
イ・イー・イー プロシーディング,第128巻,パー
ト1,ナンバー1(1981年)第19頁から第32頁
(IEE Proc.,128,Pt1,No1(1981)19−3
2)に記載されている。
Therefore, the improvement of the impregnated cathode has been made mainly for the purpose of lowering the operating temperature. For example,
An impregnated cathode in which the surface of the impregnated cathode having the above-mentioned basic structure is coated with osmium, iridium or the like has been developed, and its operating temperature has been lowered to about 1000 ° C. In this regard, IEE Proceedings, Volume 128, Part 1, Number 1 (1981), pages 19 to 32 (IEE Proc., 128, Pt1, No1 (1981) 19-3
2).

【0007】また、同様に、タングステンを主体にスカ
ンジウムを、Sc/W原子比で0.05〜0.30 ほど含む
薄膜を被覆した被覆含浸形陰極(以下Sc被覆型含浸形
陰極と略記)は、900℃で前述の電流密度での動作が
可能である。これに関しては、エス・アイ・ディー91
ダイジェスト オブ テクニカルペーパーズ 第70
7頁から第710頁(SID91 Digest of technical pape
rs 707−710)に記載されている。
Similarly, a coated impregnated cathode (hereinafter abbreviated as Sc-coated impregnated cathode) coated with a thin film containing mainly tungsten and scandium in a Sc / W atomic ratio of about 0.05 to 0.30 is 900 It is possible to operate at the aforementioned current density at ° C. In this regard, SID 91
Digest of Technical Papers 70th
Pages 7 to 710 (SID91 Digest of technical pape
rs 707-710).

【0008】[0008]

【発明が解決しようとする課題】上述の様に、含浸形陰
極は、大電流密度での動作が可能である反面、最も低温
で動作可能なSc被覆含浸形陰極でも900℃であり、
酸化物陰極に比較して150℃も動作温度が高い。この
ような高い動作温度は、陰極近傍の電極の温度上昇を招
き、熱膨張による電極間の変化や、陰極以外の電極から
の不要な電子放出の原因となる。そのため、含浸形陰極
を用いたブラウン管の電子銃は、酸化物陰極を用いたも
のに比較し、信頼性の低下を招きやすい。
As described above, the impregnated cathode can operate at a high current density, but the Sc-coated impregnated cathode which can operate at the lowest temperature is 900 ° C.,
The operating temperature is 150 ° C. higher than that of the oxide cathode. Such a high operating temperature causes a temperature rise of the electrodes in the vicinity of the cathode, causing a change between electrodes due to thermal expansion and unnecessary electron emission from electrodes other than the cathode. Therefore, the electron gun of the cathode ray tube using the impregnated cathode is apt to cause a decrease in reliability as compared with the electron gun using the oxide cathode.

【0009】ところで、Sc被覆含浸形陰極からの電子
放出は不均一であり、高い電子放出領域はバリウムの供
給量の多い領域に対応している。これに関しても、エス
・アイ・ディー91 ダイジェスト オブ テクニカル
ペーパーズ 第707頁から第710頁(SID91 Digest
of technical papers 707−710)に記載されてい
る。従って、陰極被覆膜へのバリウム供給を、従来より
も増すことができれば、さらに良好な電子放出特性が得
られることが予想され、動作温度の低減が図れる。
By the way, the electron emission from the Sc-coated impregnated cathode is non-uniform, and the high electron emission region corresponds to the region in which the supply amount of barium is large. In this regard as well, SID 91 Digest of Technical Papers, pages 707 to 710 (SID91 Digest
of technical papers 707-710). Therefore, if the supply of barium to the cathode coating film can be increased more than in the conventional case, it is expected that better electron emission characteristics will be obtained, and the operating temperature can be reduced.

【0010】本発明の目的は、高電流密度で低温動作で
きる含浸形陰極および、これを用いた信頼性の高い電子
管を提供することにある。
It is an object of the present invention to provide an impregnated cathode capable of operating at a low temperature with a high current density and a highly reliable electron tube using the same.

【0011】[0011]

【課題を解決するための手段】上記目的を達成するた
め、本発明の含浸形陰極は、タングステンを主体にスカ
ンジウムを含む表面被覆膜と、上記被覆膜にバリウム原
子を供給する含浸剤を内蔵した多孔質タングステン基体
から構成され、上記多孔質タングステン基体がタングス
テン粒径の数倍から数十倍の間隔で、または10μmか
ら100μmの間隔で、三次元的に網目状に割れを有す
る構成とした。
In order to achieve the above object, the impregnated cathode of the present invention comprises a surface coating film containing scandium mainly of tungsten and an impregnating agent for supplying barium atoms to the coating film. A porous tungsten substrate incorporated therein, wherein the porous tungsten substrate has three-dimensional mesh-like cracks at intervals of several times to several tens times the tungsten particle size, or at intervals of 10 μm to 100 μm. did.

【0012】ここで、多孔質タングステン基体が網目状
の割れを有すること以外、本発明の含浸形陰極は基本的
には従来のSc被覆含浸形陰極と同様であり、被覆膜は
タングステン中にスカンジウムをSc/W原子比率で
0.05〜0.30含むものであり、被覆膜厚は0.1μ
m〜0.5μmが望ましい。同様に含浸剤は、一般的な
含浸形陰極と同様のもので、BaO,Al23,CaO
のモル比で4:1:1や5:2:3等で良い。さらに、
多孔質体の原料となるタングステン粉末も、一般的な含
浸形陰極と同様であり、1μm〜10μmが用いられ
る。
Here, the impregnated cathode of the present invention is basically the same as the conventional Sc-coated impregnated cathode except that the porous tungsten substrate has network-like cracks. It contains scandium in an atomic ratio of Sc / W of 0.05 to 0.30 and a coating film thickness of 0.1 μm.
m to 0.5 μm is desirable. Similarly, the impregnating agent is the same as that for a general impregnated cathode, and includes BaO, Al 2 O 3 and CaO.
The molar ratio may be 4: 1: 1 or 5: 2: 3. further,
The tungsten powder, which is a raw material for the porous body, is the same as that for a general impregnated cathode, and 1 μm to 10 μm is used.

【0013】[0013]

【作用】従来の含浸形陰極では、陰極内部でタングステ
ンと含浸剤が反応し生成したバリウム原子は、多孔質体
の空孔部を拡散して陰極表面及び被覆膜層に供給され
る。これに対し、本発明の含浸形陰極では、空孔部を通
してのバリウム原子の拡散による供給以外に、割れ目部
分を通しての拡散による供給が加わる。したがって、本
発明の含浸形陰極では陰極表面及び被覆膜層へのバリウ
ム供給量が増える。その結果、良好な電子放出特性が得
られ、従来よりもさらに低温動作が可能になる。また、
本発明の含浸形陰極を用いた電子管は陰極近傍の温度上
昇を抑さえることができ、従来の含浸形陰極を用いた電
子管に比較し高信頼性を実現できる。
In the conventional impregnated cathode, the barium atom generated by the reaction between the tungsten and the impregnating agent inside the cathode diffuses through the pores of the porous body and is supplied to the cathode surface and the coating film layer. On the other hand, in the impregnated cathode of the present invention, in addition to the supply by diffusion of barium atoms through the void portion, the supply by diffusion through the cracked portion is added. Therefore, in the impregnated cathode of the present invention, the amount of barium supplied to the cathode surface and the coating film layer increases. As a result, good electron emission characteristics can be obtained, and operation at a lower temperature can be performed than ever before. Also,
The electron tube using the impregnated cathode of the present invention can suppress the temperature rise in the vicinity of the cathode, and can achieve higher reliability than the electron tube using the conventional impregnated cathode.

【0014】[0014]

【実施例】図1は、本発明による含浸形陰極の実施例を
説明するための、含浸剤2を内蔵する多孔質タングステ
ン基体1およびその表面に形成される被覆膜3の断面図
である。多孔質タングステン基体は、網目状の割れ4を
もつ。図2は本実施例の含浸形陰極の表面のSEMの顕
微鏡組織写真である。多孔質体の原料であるタングステ
ン紛末は粒径5μmである。粒径の数倍から数十倍の大
きさで、つまり20μmから100μm程度の大きさ
で、網目状の割れ4′が存在することがわかる。図3は
比較のために示した従来の含浸形陰極表面のSEM写真
である。従来の含浸形陰極では、網目状の割れは存在し
ない。
EXAMPLE FIG. 1 is a sectional view of a porous tungsten substrate 1 containing an impregnating agent 2 and a coating film 3 formed on the surface thereof for explaining an example of an impregnated cathode according to the present invention. . The porous tungsten substrate has mesh-like cracks 4. FIG. 2 is a SEM microstructure photograph of the surface of the impregnated cathode of this example. Tungsten powder, which is a raw material for the porous body, has a particle size of 5 μm. It can be seen that the mesh-like cracks 4'exist with a size several times to several tens of times the particle size, that is, a size of about 20 μm to 100 μm. FIG. 3 is a SEM photograph of a conventional impregnated cathode surface shown for comparison. In the conventional impregnated cathode, there are no network cracks.

【0015】図2のSEM写真に示した実施例は、粒径
5μmのタングステン粉末を1600℃で真空中で燒結した
後、水素中で含浸剤を含浸したものである。含浸剤はB
aO,Al23,CaOをモル比で4:1:1に混合し
たものを用いた。ただし、BaO及びCaOの原材料に
はBaCO3及びCaCO3を用いた。これらは含浸前に
1000℃程度で予備加熱され分解し酸化物となる。そ
の後、水素雰囲気中で1900℃まで加熱し、溶融含浸
した。
In the embodiment shown in the SEM photograph of FIG. 2, tungsten powder having a particle size of 5 μm is sintered in vacuum at 1600 ° C. and then impregnated with hydrogen in an impregnating agent. Impregnating agent is B
A mixture of aO, Al 2 O 3 and CaO at a molar ratio of 4: 1: 1 was used. However, BaCO 3 and CaCO 3 were used as raw materials for BaO and CaO. Before impregnation, these are preheated at about 1000 ° C. and decomposed to form oxides. Then, it was heated to 1900 ° C. in a hydrogen atmosphere and melt-impregnated.

【0016】含浸後、多孔質基体表面を研磨し、スパッ
タ成膜装置で、被覆膜を0.2μmほど形成した。スパ
ッタターゲットはタングステンとSc2312を用い
た。陰極の形状は円筒であり、その直径は1.2mm であ
る。これをモリブデン製のカップとスリーブからなる支
持部品と一体化し、スリーブにヒータを挿入し加熱を行
えるように構成した。
After the impregnation, the surface of the porous substrate was polished and a coating film of about 0.2 μm was formed with a sputtering film forming apparatus. As the sputtering target, tungsten and Sc 2 W 3 O 12 were used. The shape of the cathode is a cylinder, and its diameter is 1.2 mm. This was integrated with a support component consisting of a molybdenum cup and a sleeve, and a heater was inserted into the sleeve so that heating could be performed.

【0017】本実施例では、全く加熱していない陰極で
800℃程度まで急激な加熱を行い、含浸形陰極内部に
包含するガスの、脱ガスの圧力によりひび割れを形成し
た。その後、1150℃で4時間の加熱を行った。図3
の従来例は、比較的ゆるやかに温度上昇を行ったこと以
外は、本発明の含浸形陰極と同様である。
In this example, the cathode which was not heated at all was rapidly heated to about 800 ° C., and cracks were formed by the degassing pressure of the gas contained in the impregnated cathode. Then, it heated at 1150 degreeC for 4 hours. Figure 3
The conventional example of No. 1 is the same as the impregnated cathode of the present invention, except that the temperature is raised relatively slowly.

【0018】1150℃で4時間の加熱を行った後、9
00℃で放出電流を測定した。測定では、陽極を含浸形
陰極から7mm離して対向させ、陽極に4kVのパルス電
圧を印加した。陰極の温度は、光温度計で測定した輝度
温度である。その結果、従来例では280mAであった
が、本実施例では390mAの放出電流が得られた。ま
た、従来例と同じ280mAの電流が得られる陰極温度
はおよそ800℃であった。したがって、本発明の含浸
形陰極では、従来のSc被覆含浸形陰極よりもさらに1
00℃程度の動作温度の低減が図れる。
After heating at 1150 ° C. for 4 hours, 9
The emission current was measured at 00 ° C. In the measurement, the anode was opposed to the impregnated cathode by 7 mm, and a pulse voltage of 4 kV was applied to the anode. The temperature of the cathode is the brightness temperature measured by an optical thermometer. As a result, an emission current of 390 mA was obtained in this example, while it was 280 mA in the conventional example. The cathode temperature at which the same current of 280 mA as in the conventional example was obtained was about 800 ° C. Therefore, the impregnated cathode of the present invention has an additional 1% more than the conventional Sc-coated impregnated cathode.
The operating temperature can be reduced to about 00 ° C.

【0019】実施例では、含浸剤として、BaO,Al
23,CaOをモル比で4:1:1に混合したものを用
いたが、これは5:2:3に混合したものや、一般に含
浸形陰極の含浸形に用いられる他の組成でも同様の効果
を示す。また、本発明の含浸形陰極の電子放出機構は、
Sc被覆含浸形陰極と同一であるので、被覆膜3の組成
及び製造方法はSc被覆含浸形陰極と同一で良い。従っ
て、好ましい組成は、Sc/W原子比率で0.05から
0.30の範囲である。実施例では、スパッタターゲッ
トとしてタングステンとSc2312を用いたが、これ
はタングステンとSc23やSc6WO12 でもよく、さ
らに酸化タングステンを加えても良い。また、成膜法は
スパッタ成膜法に限るものではない。本実施例の多孔質
タングステン基体の原料となるタングステン粉末は粒径
5μmのものを用いたが、タングステンの粒径は一般の
含浸形陰極に用いられる1μmから10μmであれば良
い。また、粒径は均一である必要はなく、これらの混合
であっても良い。
In the examples, as the impregnating agent, BaO, Al
A mixture of 2 O 3 and CaO in a molar ratio of 4: 1: 1 was used, but this may be a mixture of 5: 2: 3 and other compositions generally used for impregnated cathodes. Similar effects are shown. The electron emission mechanism of the impregnated cathode of the present invention is
Since it is the same as the Sc-coated impregnated cathode, the composition and manufacturing method of the coating film 3 may be the same as that of the Sc-coated impregnated cathode. Therefore, the preferred composition is in the range of 0.05 to 0.30 in terms of Sc / W atomic ratio. In the examples, tungsten and Sc 2 W 3 O 12 were used as the sputtering target, but tungsten, Sc 2 O 3 or Sc 6 WO 12 may be used, or tungsten oxide may be added. The film forming method is not limited to the sputter film forming method. The tungsten powder used as the raw material of the porous tungsten substrate of this example had a particle size of 5 μm, but the particle size of tungsten may be 1 μm to 10 μm used in a general impregnated cathode. The particle size does not have to be uniform, and a mixture of these may be used.

【0020】また、実施例は、含浸形陰極について説明
したが、本発明の含浸形陰極は電子管に使用されるもの
であり、本発明の含浸形陰極を使用した電子管は従来の
含浸形陰極を用いたものに比べ、陰極からの熱的要因に
対する高い信頼性をもつことは明白である。従って本発
明は、本発明の含浸形陰極を使用した電子管を含むもの
である。
Although the embodiment has been described with reference to the impregnated cathode, the impregnated cathode of the present invention is used for an electron tube, and an electron tube using the impregnated cathode of the present invention is a conventional impregnated cathode. It is clear that it has a higher reliability for thermal factors from the cathode than the one used. Therefore, the present invention includes an electron tube using the impregnated cathode of the present invention.

【0021】[0021]

【発明の効果】本発明の含浸形陰極の構成によればタン
グステンを主体としスカンジウムを含む被覆膜層に、従
来構成よりも多くのバリウムを供給できる。その結果、
従来のSc被覆含浸形陰極よりもさらに約100℃低温
で、電子管に要求される大電流密度動作が可能となる。
According to the structure of the impregnated cathode of the present invention, it is possible to supply more barium to the coating film layer mainly composed of tungsten and containing scandium than in the conventional structure. as a result,
The large current density operation required for the electron tube can be performed at a temperature about 100 ° C. lower than that of the conventional Sc-coated impregnated cathode.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による含浸形陰極の実施例の構成を説明
する断面図。
FIG. 1 is a cross-sectional view illustrating the configuration of an embodiment of an impregnated cathode according to the present invention.

【図2】本発明の実施例を示す含浸形陰極の表面の顕微
鏡組織写真。
FIG. 2 is a microstructure photograph of a surface of an impregnated cathode showing an example of the present invention.

【図3】従来例を示す含浸形陰極の表面の顕微鏡組織写
真。
FIG. 3 is a microstructure photograph of the surface of an impregnated cathode showing a conventional example.

【符号の説明】[Explanation of symbols]

1…多孔質タングステン基体、2…含浸剤、3…被覆
膜、4,4′…網目状の割れ。
1 ... Porous tungsten substrate, 2 ... Impregnating agent, 3 ... Coating film, 4, 4 '... Network-like cracks.

フロントページの続き (72)発明者 山田 絵実子 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 成清 正 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内Front page continuation (72) Inventor Emiko Yamada 1-280 Higashi-Kengokubo, Kokubunji-shi, Tokyo Inside Hitachi Central Research Laboratory (72) Inventor Tadashi Seisei 1-280 Higashi-Kengikubo, Kokubunji-shi, Tokyo Hitachi Research Center Co., Ltd. In-house

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】タングステン粉末を燒結した多孔質タング
ステン基体に、バリウムを含む酸化物を含浸させた含浸
形陰極の表面に、タングステンと、少なくともスカンジ
ウム,酸化スカンジウム,タングステン酸スカンジウム
のいずれか一つ又は複数を含む被覆膜を形成した被覆含
浸形陰極において、前記多孔質タングステン基体が前記
タングステン粉末の平均粒径の数倍から数十倍の間隔で
網目状の割れを有することを特徴とする含浸形陰極。
1. A surface of an impregnated cathode obtained by impregnating a barium-containing oxide with a porous tungsten substrate sintered with tungsten powder, and at least one of scandium, scandium oxide, and scandium tungstate, or tungsten. In a coated impregnated cathode formed with a coating film including a plurality, the porous tungsten substrate has a network crack at intervals of several times to several tens of times the average particle diameter of the tungsten powder. Shaped cathode.
【請求項2】請求項1において、前記タングステン粉末
の粒径が1μm以上、10μm以下である含浸形陰極。
2. The impregnated cathode according to claim 1, wherein the particle size of the tungsten powder is 1 μm or more and 10 μm or less.
【請求項3】請求項1または2に記載の含浸形陰極を用
いた電子管。
3. An electron tube using the impregnated cathode according to claim 1.
JP27403892A 1992-10-13 1992-10-13 Impregnated type cathode and electron tube using this Pending JPH06124648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27403892A JPH06124648A (en) 1992-10-13 1992-10-13 Impregnated type cathode and electron tube using this

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27403892A JPH06124648A (en) 1992-10-13 1992-10-13 Impregnated type cathode and electron tube using this

Publications (1)

Publication Number Publication Date
JPH06124648A true JPH06124648A (en) 1994-05-06

Family

ID=17536103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27403892A Pending JPH06124648A (en) 1992-10-13 1992-10-13 Impregnated type cathode and electron tube using this

Country Status (1)

Country Link
JP (1) JPH06124648A (en)

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