JPH08307155A - Gun diode oscillator using non-radiative dielectric line - Google Patents

Abstract

PURPOSE: To obtain the gun diode oscillator using a non-radiative dielectric line in which mass-productivity is improved. CONSTITUTION: A gun diode oscillation block 2 and a resonator 3 are incorporated between a couple of conductor plates 11, 12 of a non-radiative dielectric line 1. An oscillation signal of a gun diode 22 mounted to one side face of the gun diode oscillation block 2 is propagated to a dielectric strip 13 of the non-radiative dielectric line 1 via the resonator 3. The resonator is made of only metallic materials and is provided with an oscillating frequency control section 31 to set the oscillating frequency of the oscillated signal to be a prescribed frequency, a soldering section 32 soldered to a bias application terminal of the gun diode 22 and connected to the oscillating frequency control section 31 and a lead wire section 33.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Gunn diode oscillator used for an FM radar oscillator, and more particularly, a non-radiative dielectric waveguide (Nonradiative).
The present invention relates to a Gunn diode oscillator that utilizes Dielectric Waveguide) and that oscillates in a microwave band or a millimeter wave band.

[0002]

2. Description of the Related Art Conventionally, a pair of conductor plates are arranged in parallel with each other so as to have a predetermined gap therebetween, and LSM01 mode or LSE01 mode is arranged along a dielectric strip arranged between both conductor plates. There is a non-radiative dielectric waveguide that is designed to propagate the electromagnetic wave of. When the dielectric strip is sandwiched by the conductor plates, electromagnetic waves having a wavelength that is at least twice the height h are cut off at the portion where the dielectric strip is not present. On the other hand, in the portion of the dielectric strip, the blocking effect is canceled. Therefore, the LSM01 mode or LSE01 mode electromagnetic wave does not radiate and propagates along the dielectric strip with low loss. Therefore, the non-radiative dielectric line is suitable for a microwave or millimeter wave transmission line.

A Gunn diode oscillator can be formed by disposing a Gunn diode, a coupling resonator, and the like together with the dielectric strip between the pair of conductor plates. Therefore, the non-radiative dielectric waveguide is suitable for the integration of the Gunn diode oscillator in the microwave band or the millimeter wave band. Therefore, conventionally, a Gunn diode oscillator using a non-radiative dielectric line has been considered.

9 and 10 are perspective views showing the structure of a conventional Gunn diode oscillator. In particular, FIG. 9 shows a mounted state, and FIG. 10 shows a disassembled state. 9 and 10, the Gunn diode oscillator is roughly provided with a non-radiative dielectric line section 100, a Gunn diode oscillation block 200, and a resonator 300.

The non-radiative dielectric line portion 100 includes upper and lower conductor plates 101 and 102 (omitted in FIG. 10) and a dielectric strip 103. Conductor plates 101, 102
Is a metal material such as aluminum and is arranged in parallel at a predetermined interval (for example, 2.5 mm) smaller than a half wavelength of a millimeter wave band signal (for example, 60 GHz) to be used. The dielectric strip 103 is made of a dielectric material (relative permittivity εr = 2) such as Teflon and has a width a (for example, 2.25 m).
m) and height h (for example, 2.5 mm).

The Gunn diode oscillation block 200 includes a diode mount 201 and a diode mount 201.
A Gunn diode 202 mounted on one side of the diode mount 201 and a microstrip line type bias substrate 203 mounted on one side of the diode mount 201. The diode mount 201 is formed of a metal material (for example, copper metal plated with gold) into a substantially rectangular columnar shape (for example, width 3.75 mm, height 2.5 mm, length 7.5 mm), and the conductor plate 101. , 102 to ground. The Gunn diode 202 is mounted by die-bonding the diode chip to the diode mount 201 from a diode chip, covering the same with a cylindrical ceramic case, and sealing the upper part, which is wire-connected to the chip electrode, with a metal lid. One end of the Gunn diode 202 is electrically connected to the diode mount 201.

The diode mount 201 serves as a heat sink for the Gunn diode 202. The oscillation signal of the Gunn diode 202 is provided above and below the diode mount 201.
1 for trapping a leak signal so that it does not flow in the gap between the conductor plate 101 and the conductor plates 101, 102, and for allowing a large amount of the oscillation signal of the Gunn diode 202 to flow to the dielectric strip 103 side.
01a and 201b are formed.

The bias substrate 203 is a Gunn diode 2
This is for supplying a bias voltage to the terminal 202a of 02 and trapping the oscillation signal of the Gunn diode 202 to prevent the oscillation signal from flowing to the bias voltage supply side. Therefore, the bias substrate 203 includes a dielectric substrate 203a, a printed wiring 203b formed on the dielectric substrate 203a, and a lead wire portion 203c for electrically connecting the printed wiring 203b and the Gunn diode terminal 202a. Including and

The printed wiring 203b equivalently forms a capacitor and an inductance depending on the width of the line, and operates as a low-pass filter. Lead wire part 20
3c is a printed wiring 203b on the dielectric substrate 203a.
And a part of the dielectric substrate 203a (see FIG. 1).
It is formed by deleting the part (shown by the dotted line of 0). Such a bias substrate 203 is mounted on one side surface of the diode mount 201 with an adhesive or the like. Further, the lead wire portion 203c is soldered to the terminal 202a of the Gunn diode.

The resonator 300 is for guiding the oscillation signal of the Gunn diode 202 to the dielectric strip 103. In this resonator 300, the oscillation frequency of the Gunn diode 202 is set to a desired frequency (for example, 60 G) by the dielectric substrate 301 and the width and length of the line on the dielectric substrate 301.
And a printed wiring 302 for setting the frequency (Hz).

In such a Gunn diode oscillator, the dielectric strip 103, the Gunn diode oscillation block 200 and the resonator 300 are positioned and arranged on the conductor plate 102, and the dielectric strip 103, the Gunn diode oscillation block 200 and the resonator 300 are arranged. Conductor plates 101, 102
It is formed by sandwiching with.

When a predetermined constant bias voltage is applied to the printed wiring 203b, the gun diode 202 is
It oscillates at 0 GHz. Since the resonator 300 and the dielectric strip 103 are field-coupled, the dielectric strip 1
This oscillation signal flows in 03 in the LSM01 mode. When the voltage applied to the printed wiring 203b is changed, the carrier inside the Gunn diode is changed according to the change, so that the oscillation frequency is changed. If the applied voltage is changed according to a desired signal, the oscillation frequency of the Gunn diode is FM-modulated.
FM oscillation centered on Hz. Since the resonator 300 and the dielectric strip 103 are field-coupled, this FM oscillation signal flows in the dielectric strip 103 in the LSM01 mode.

11 and 12 are perspective views showing the structure of another conventional Gunn diode oscillator. In particular,
1 shows a mounted state, and FIG. 12 shows a disassembled state. The parts corresponding to those of the Gunn diode oscillators of FIGS. 9 and 10 are designated by the same reference numerals and the description thereof will be omitted. In the Gunn diode oscillator of FIGS. 11 and 12, a beam lead type varactor diode 20 is used.
5 and the point where the FM modulation is performed and the diode mount 201
9 and FIG. 10, the rectangular grooves G1 and G2 for accommodating the upper part and the lower part are formed in the conductor plates 101 and 102 to position the Gunn diode oscillation block 200. It is different from the oscillator.

The bias substrate 206 is a dielectric substrate 206.
a and two printed wirings 206b, 20 formed on the dielectric substrate 206a and operating as a low-pass filter.
6c, the lead wire portion 206d, and the metal pattern 206e
And A through hole 206f for exposing the terminal 202a of the Gunn diode 202 is formed in substantially the center of the bias substrate 206. Such a bias substrate 206 is mounted on one side surface of the diode mount 201 with an adhesive or the like. A gold foil 206g is horizontally provided between the lead wire portion 203c and the metal pattern 206e. The gold foil 206g is thermocompression-bonded to the lead wire portion 203c, the metal pattern 206e, and the terminal 202a of the Gunn diode, thereby electrically connecting them. Further, a varactor diode 205 is horizontally provided between the metal pattern 206e and the printed wiring 206c. The two lead terminals of the varactor diode 205 are electrically connected to the metal pattern 206e and the printed wiring 206c by thermocompression bonding.

Such a Gunn diode oscillator includes a dielectric strip 103 and a resonator 30 on a conductor plate 102.
0 is positioned and arranged, the Gunn diode oscillation block 200 is mounted in the groove G2, and the conductor plates 101, 102
It is formed by sandwiching the dielectric strip 103, the Gunn diode oscillation block 200, and the resonator 300.

When a predetermined constant bias voltage is applied to the printed wiring 206b and a desired signal voltage is applied to 206c,
The oscillation frequency of the Gunn diode 202 is FM-modulated by the capacitance change of the varactor diode 205. The oscillation signal is transmitted to the resonator 300, and the resonator 300 and the dielectric strip 103 are electric-field coupled to each other. Therefore, the FM oscillation signal flows in the dielectric strip 103 in the LSM01 mode.

[0017]

However, as shown in FIG.
In the Gunn diode oscillator of FIG. 12, the resonator 300 is positioned and arranged separately from the Gunn diode oscillation block 200 and the dielectric strip 103, and the conductor plates 101 and 10 are arranged.
It is sandwiched between two and fixed. For this reason, it is difficult to control the processing accuracy of the resonator 300 and position it with respect to the Gunn diode 202. This is because if the processing accuracy of the resonator 300 is poor, the resonator 300 will be displaced due to vibration or its own weight, and if the positioning is not accurate, the dielectric strip 1 will be displaced.
This is because the propagation characteristic to the signal 03 changes. Therefore,
The Gunn diode oscillators shown in FIGS. 9 to 12 have the first problem that they are not suitable for mass production because they have poor workability and require management of processing accuracy.

The resonator 300 has a dielectric substrate 301.
Therefore, there is a second problem that dielectric loss occurs in the dielectric substrate 301 and power loss is large.

In the Gunn diode oscillator of FIGS. 9 and 10, the Gunn diode oscillation block 200 is used as the conductor plate 1.
It is sandwiched between 01 and 102 and fixed. In the Gunn diode oscillator of FIGS. 11 and 12, the Gunn diode oscillation block 200 is fixed by being inserted into the grooves G1 and G2.
Therefore, in the Gunn diode oscillators of FIGS. 9 to 12,
It is difficult to control the processing accuracy of the Gunn diode oscillation block 200. Further, in the Gunn diode oscillators of FIGS. 9 and 10, it is difficult to position the resonator 300 with respect to the resonator 300. Therefore, even in this case, there is a first problem that it is not suitable for mass production.

Therefore, it is a first object of the present invention to provide a Gunn diode oscillator using a non-radiative dielectric line improved in mass productivity.

A second object is to provide a Gunn diode oscillator using a non-radiative dielectric line with reduced power loss.

[0022]

The invention according to claim 1 is
A Gunn diode block and a resonator are provided between a pair of conductor plates of the non-radiative dielectric line, and the oscillation signal of the Gunn diode mounted on one side surface of the Gunn diode block is passed through the non-radiative dielectric line through the resonator. A Gunn diode oscillator adapted to propagate to a body line, wherein the resonator is
An oscillation frequency control unit for forming the oscillation frequency of the oscillation signal to a predetermined value, which is formed only of a metal material, and a connection unit communicating with the oscillation frequency control unit and connected to the terminal of the Gunn diode. Prepare

According to a second aspect of the present invention, in the first aspect of the invention, a bias substrate for supplying a bias voltage to a terminal of the Gunn diode is mounted on one side surface of the Gunn diode block, and the resonator is , Communicating with the connection,
A lead wire portion for electrically connecting the terminal of the Gunn diode and the bias substrate is further provided.

The invention according to claim 3 is the invention according to claim 1 or 2.
In the invention, the resonator is formed in one plane and is arranged in parallel with one side surface of the Gunn diode block.

According to a fourth aspect of the present invention, a Gunn diode block and a resonator are provided between a pair of conductor plates of a non-radiative dielectric line, and a Gunn diode mounted on one side of the Gunn diode block oscillates. A Gunn diode oscillator in which a signal is propagated to a non-radiative dielectric line through the resonator, wherein a Gunn diode block is screwed and fixed at a predetermined position on one of the conductor plates. A screw fixing means is provided.

According to a fifth aspect of the present invention, in the invention of the fourth aspect, one side of the Gunn diode block has a concave groove for each λg / 4, and the surface contacting with the screw is formed in a flat shape. .

[0027]

In the invention according to claim 1, the resonator is formed only of a metallic material, and the oscillation frequency control section and the connection section which is connected to the oscillation frequency control section and which is connected to the terminal of the Gunn diode are provided. I am preparing. Therefore, the conventional dielectric substrate becomes unnecessary. Therefore, power loss is reduced. In addition, the positioning becomes easy, and the processing accuracy is rough. Therefore, the workability is improved, and the management of the processing accuracy is unnecessary, so that the mass productivity is improved.

In the invention according to claim 2, a bias substrate for supplying a bias voltage to the terminals of the Gunn diode is mounted on one side surface of the Gunn diode block, and the resonator communicates with the connecting portion. A lead wire portion for electrically connecting the terminal of the Gunn diode and the bias substrate is further provided. For this reason, since the connection with the bias substrate can be easily performed, the conventional substrate cutting process is unnecessary, and the configuration of the bias substrate is simplified.

In the invention according to claim 3, the resonator is formed in one plane, and the resonator is arranged parallel to one side surface of the Gunn diode block. Therefore, the resonator can be easily manufactured, and the connection to the terminal of the Gunn diode is facilitated.

In the invention according to claim 4, the Gunn diode block is screwed and fixed to one of the conductor plates at a predetermined position. Therefore, positioning becomes easy and mass productivity is improved.

In the invention according to claim 5, one side of the Gunn diode block has a concave groove for each λg / 4, and the surface abutting with the screw is formed in a flat shape. Therefore, the heat conduction between any one of the conductor plates and the Gunn diode oscillation block is improved, and the reliability of the Gunn diode is improved.
Further, since it is not necessary to perform groove processing, the processing can be facilitated and the processing cost can be reduced.

[0032]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 are diagrams showing a configuration of a Gunn diode oscillator according to an embodiment of the present invention. In particular, FIG. 1 shows the mounted state, FIG. 2 shows the mounted state seen from the direction A in FIG. 1, and FIG. 3 shows the disassembled state. FIG.
In FIG. 3, the Gunn diode oscillator is roughly provided with a non-radiative dielectric line section 1, a Gunn diode oscillation block 2, and a resonator 3.

The non-radiative dielectric line portion 1 includes upper and lower conductor plates 11 and 12 and a dielectric strip 13. The conductor plates 11 and 12 are made of a metal material such as aluminum and are arranged in parallel at a predetermined interval (for example, 2.5 mm) smaller than a half wavelength of a millimeter wave band signal (for example, 60 GHz) to be used. For this reason, the conductor plate 12 is formed with a frame 12a (see FIG. 1) having a predetermined height. The dielectric strip 13 is made of a dielectric material (relative permittivity εr = 2) such as Teflon and has a width a (for example, 2.25 mm) and a height h (for example, 2.5 mm). A through terminal 12b (see FIG. 1) for inputting a bias voltage is fixed to the conductor plate 12. Also, the conductor plate 1
2 has a thread groove 12c (see FIG. 3) formed at a position for positioning the Gunn diode oscillation block 2. In addition, grooves (not shown) are formed in the conductor plates 11 and 12 for positioning and fixing the dielectric strip 13.

FIG. 4 is a diagram showing the configuration of the Gunn diode oscillation block 2 and the resonator 3 of FIG. Especially Figure 4
FIG. 4A shows the upper surface and FIG. 4B shows the side surface.
The Gunn diode oscillation block 2 includes a diode mount 21, a Gunn diode 22 mounted on one side of the diode mount 21, and a microstrip line type bias substrate 23 mounted on one side of the diode mount 21. The diode mount 21 is made of a metal material (eg, copper metal plated with gold) and has a substantially rectangular columnar shape (eg, width 3.75 mm, height 2.27 mm, length 7.5 m).
m) and is grounded via the conductor plates 11 and 12. Gun diode 22 is a diode mount 2
1 is die-bonded from a diode chip, covered with a cylindrical ceramic, and mounted by sealing an upper part, which is wire-connected to the chip electrode, with a metal lid.
One end of the gun diode 22 has a diode mount 21.
Is electrically connected to

The diode mount 21 serves as a heat sink for the Gunn diode 22. Further, the lower surface of the diode mount 21 is formed on a flat surface. In addition, on the upper surface of the diode mount 21,
The oscillation signal of the Gunn diode 22 is the diode mount 2
A groove 21a is formed in order to trap a leak signal so that the leak signal does not flow in the gap between the conductor plate 11 and the conductor plate 11 and to flow a large amount of the oscillation signal of the Gunn diode 22 toward the dielectric strip 13 side. Also, the diode mount 21 has a pan screw 2
A screw hole 21c into which 1b is inserted is formed.

The bias substrate 23 is a Gunn diode 22.
This is for supplying a bias voltage to the terminal 22a of FIG. 1 and trapping the oscillation signal of the Gunn diode 22 to prevent the oscillation signal from flowing to the bias voltage supply side. Therefore, the bias substrate 23 is the dielectric substrate 23a.
And the printed wiring 23 formed on the dielectric substrate 23a
b and are included.

The printed wiring 23b equivalently forms a capacitor and an inductance depending on the width of the line, and operates as a low-pass filter. Such a bias substrate 23 is mounted on one side surface of the diode mount 21 with an adhesive or the like. The lead wire 12d (see FIG. 1) is used to connect the through terminal 12 to one end of the printed wiring 23b.
It is electrically connected to b.

The resonator 3 guides the oscillation signal of the Gunn diode 22 to the dielectric strip 13. The resonator 3 is formed only of a metallic material (for example, copper), and the oscillation frequency of the Gunn diode 22 is set to a desired frequency (for example, 60 GH) depending on the width and length of the line.
z), an oscillation frequency control section 31, a communication section that communicates with the oscillation frequency control section 31, and a soldering section 32 (see FIG. 4) that is soldered to the Gunn diode terminal 22a, and a soldering section 32. It includes a lead wire portion 33 that electrically connects the Gunn diode terminal 22a and the printed wiring 23b, and is bent in an L shape.

In the Gunn diode oscillators of FIGS. 9 and 10, the lead wire portion is formed by removing a part of the dielectric substrate, but the lead wire portion 33 of the resonator 3 is formed.
This eliminates the need for such cutting work, and facilitates the processing of the bias substrate 23.

In such a Gunn diode oscillator, the Gunn diode oscillation block 2 in which the dielectric strip 13 and the resonator 3 are arranged on the conductor plate 12 is fixed by a pan screw 21b, and the conductor plate 11 covers the conductor plate 12. It is formed by

When a predetermined constant bias voltage is applied to the through terminal 12b, the Gunn diode 22 operates at 60 GHz.
Oscillates at As a result, the resonator 3 and the dielectric strip 13 are electric-field coupled to each other, so that the dielectric strip 13 is
This oscillation signal flows in the LSM01 mode. When the voltage applied to the through terminal 12b is changed, the carrier inside the Gunn diode is changed according to the change, so that the oscillation frequency is changed. If the applied voltage is changed according to a desired signal, the oscillation frequency of the Gunn diode is FM-modulated. As a result, the resonator 3 and the dielectric strip 13 are
Since and are field-coupled, this FM oscillation signal flows in the dielectric strip 13 in the LSM01 mode.

As described above, in the Gunn diode oscillator of FIGS. 1 to 4, the resonator 3 is made of only a metallic material. Therefore, the resonator 3 does not require a conventional dielectric substrate, and the dielectric loss is eliminated, so that the output loss does not occur. Further, the resonator 3 can be directly soldered to the Gunn diode 22, and the fixing becomes easy. Further, it is not necessary to position the resonator 3 on the conductor plate 12. Further, since it is not necessary to fix the resonator 3 by sandwiching it between the conductor plates 11 and 12, the assembly processing precision requirement required for the resonator 3 is eliminated. In addition, since there is no dielectric substrate, the resonator 3
Can be made lighter. These facilitate work, improve mass productivity, and reduce costs.

The resonator 3 has a Gunn diode terminal 2
2a and the bias substrate 23 are electrically connected to each other by a lead wire portion 33. For this reason, since the connection with the bias substrate 23 can be easily performed, the conventional substrate cutting process is unnecessary, and the configuration of the bias substrate 23 becomes simple and inexpensive.

Further, the Gunn diode block 2 is screwed and fixed to the conductor plate 12 at a predetermined position. Therefore, during assembly, the upper conductor plate 11
Positioning and fixing can be done with the open. Also, screw holes 2
By slightly increasing the diameter of 1c, the position of the Gunn diode oscillation block 2 can be finely adjusted, the gap between the tip of the resonator 3 and the dielectric strip 13 can be adjusted, and the output power can be adjusted. Further, the Gundiode oscillation block 2 can be easily positioned, and the conventional assembling accuracy is low. Therefore, the workability is improved, and the management of the processing accuracy is unnecessary, so that the mass productivity is improved.

The lower surface of the Gunn diode oscillation block 2 is formed in a flat shape. Therefore, the adhesion between the Gunn diode oscillation block 2 and the conductor plate 12 is improved, and the heat conduction between the conductor plate 12 and the Gunn diode oscillation block 2 is improved, so that the reliability of the Gunn diode 22 is improved.
Further, since the Gunn diode oscillation block 2 and the conductor plate 12 are in close contact with each other, it is not necessary to form a groove on the lower surface of the Gunn diode oscillation block 2, so that the Gunn diode oscillation block 2 can be easily processed and the processing cost is reduced. To do.

5 to 7 are views showing the structure of the Gunn diode oscillator of another embodiment of the present invention. In particular, FIG. 5 shows the mounted state, FIG. 6 shows the mounted state seen from the direction A in FIG. 5, and FIG. 6 shows the disassembled state. 8 is a diagram showing the configurations of the Gunn diode oscillation block 2 and the resonator 3 of FIG. Especially Figure 8
8A shows the upper surface, and FIG. 8B shows the side surface.
The parts corresponding to those in the embodiments of FIGS. 1 to 4 are designated by the same reference numerals and the description thereof will be omitted.

It should be noted that in the Gunn diode oscillator shown in FIGS. 5 to 8, the resonator 3 is formed in one plane, and the resonator 3 is arranged in parallel with one side surface of the Gunn diode block 2. Is. This makes it easier to form the resonator 3 on one plane than to bend it in an L shape, and it becomes easier to solder the Gunn diode to the terminal 22a.

Although the grooves are formed in the conductor plates 11 and 12 and the dielectric strip 13 is positioned and fixed in the groove, the dielectric strip 1 is replaced with an adhesive instead of the groove.
3 may be positioned and fixed, and the conductor plate 11,
It may be sandwiched between 12 and fixed.

[0049]

According to the first aspect of the present invention, the resonator is formed of only a metallic material, communicates with the oscillation frequency control section and the oscillation frequency control section, and is connected to the terminal of the Gunn diode of the Gunn diode. Therefore, the conventional dielectric substrate is not necessary and the power loss is reduced. In addition, positioning is facilitated, workability is improved, and mass productivity is improved.

According to the invention of claim 2, a bias substrate for supplying a bias voltage to the terminals of the Gunn diode is mounted on one side surface of the Gunn diode block, and the resonator communicates with the connecting portion. Since the lead wire portion for electrically connecting the Gunn diode terminal and the bias substrate is further provided, the connection with the bias substrate can be easily performed, and the conventional substrate cutting process is not required. Simplifies the configuration.

According to the third aspect of the present invention, the resonator is formed in one plane, and the resonator is arranged parallel to one side surface of the Gunn diode block. Therefore, the resonator can be easily manufactured. Therefore, the connection to the terminal of the Gunn diode becomes easy.

According to the fourth aspect of the present invention, the Gunn diode block is screwed and fixed at a predetermined position on one of the conductor plates. Therefore, the positioning is facilitated and mass productivity is improved. Is improved.

According to the fifth aspect of the present invention, since one side of the Gunn diode block has a concave groove for each λg / 4 and the surface abutting with the screw is formed in a flat shape, any one of the conductor plates is formed. The heat conduction between one side and the Gunn diode oscillation block is improved, and the reliability of the Gunn diode is improved. Moreover, since it is not necessary to machine one groove, the machining cost is reduced.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a Gunn diode oscillator according to an embodiment of the present invention in a mounted state.

FIG. 2 is a perspective view showing a mounting state viewed from the direction A in FIG.

FIG. 3 is a perspective view showing a state where FIG. 2 is disassembled.

FIG. 4 is a diagram showing configurations of a Gunn diode oscillation block 2 and a resonator 3 of FIG.

FIG. 5 is a diagram showing a configuration of a Gunn diode oscillator according to another embodiment of the present invention in a mounted state.

6 is a perspective view showing a mounting state as seen from the direction A in FIG.

FIG. 7 is a perspective view showing a state where FIG. 6 is disassembled.

8 is a diagram showing a configuration of a Gunn diode oscillation block 2 and a resonator 3 of FIG.

FIG. 9 is a perspective view showing a configuration of a conventional Gunn diode oscillator in a mounted state.

FIG. 10 is a perspective view showing a configuration in a state where FIG. 9 is disassembled.

FIG. 11 is a perspective view showing a configuration of another conventional Gunn diode oscillator in a mounted state.

FIG. 12 is a perspective view showing a configuration in a state where FIG. 11 is disassembled.

[Explanation of symbols]

 1 ... Non-radiative dielectric line section 2 ... Gunn diode oscillation block 3 ... Resonator 11, 12 ... Conductor plate 12c ... Screw groove 13 ... Dielectric strip 21 ... Diode mount 21a ... Groove 21b ... Pan screw 21c ... Screw hole 22 ... Gunn diode 22a ... Terminal 23 ... Bias substrate 31 ... Oscillation frequency controller 32 ... Soldering part 33 ... Lead wire part

Claims (5)

[Claims] 1. A Gunn diode block and a resonator are provided between a pair of conductor plates of a non-radiative dielectric line, and an oscillation signal of a Gunn diode mounted on one side surface of the Gunn diode block is applied to the resonator. A Gunn diode oscillator adapted to propagate through the dielectric strip of the non-radiative dielectric line via the resonator, wherein the resonator is formed only of a metal material, and the oscillation frequency of the oscillation signal is a predetermined value. A Gunn diode oscillator using a non-radiative dielectric line, comprising: an oscillation frequency control unit for controlling the oscillation frequency; and a connection unit communicating with the oscillation frequency control unit and connected to a terminal of the Gunn diode. 2. A bias substrate for supplying a bias voltage to a terminal of the Gunn diode is mounted on one side surface of the Gunn diode block, and the resonator communicates with the connecting portion. The Gunn diode oscillator using a non-radiative dielectric line according to claim 1, further comprising a lead wire portion electrically connecting a terminal of a diode and the bias substrate. 3. The non-radiative dielectric waveguide according to claim 1, wherein the resonator is formed in one plane and is arranged in parallel with one side surface of the Gunn diode block. Gunn diode oscillator. 4. A Gunn diode block and a resonator are internally provided between a pair of conductor plates of a non-radiative dielectric line, and an oscillation signal of a Gunn diode mounted on one side surface of the Gunn diode block is supplied to the resonator. A Gunn diode oscillator adapted to propagate through a non-radiative dielectric line via a screwing fixing unit for screwing and fixing the Gunn diode block at a predetermined position on one of the conductor plates. And a Gunn diode oscillator using a non-radiative dielectric line. 5. A surface of the Gunn diode block that comes into contact with one of the conductor plates is formed in a flat shape, and a groove is formed on the other surface at intervals of λg / 4. A Gunn diode oscillator using the non-radiative dielectric line according to claim 4.