JPH0428163B2 - - Google Patents
Info
- Publication number
- JPH0428163B2 JPH0428163B2 JP59104245A JP10424584A JPH0428163B2 JP H0428163 B2 JPH0428163 B2 JP H0428163B2 JP 59104245 A JP59104245 A JP 59104245A JP 10424584 A JP10424584 A JP 10424584A JP H0428163 B2 JPH0428163 B2 JP H0428163B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- dielectric substrate
- oscillator
- substrate
- dielectric resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 230000007423 decrease Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
- H03B9/148—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a dielectric resonator
Description
【発明の詳細な説明】
(a) 産業上の利用分野
本発明は、マイクロ波集積回路等の発振器に係
り、とくに、主要構成要素である誘電体共振器の
Qの低下の防止を図つた発振器に関する。[Detailed Description of the Invention] (a) Industrial Application Field The present invention relates to an oscillator for a microwave integrated circuit or the like, and particularly to an oscillator that prevents a decrease in the Q of a dielectric resonator, which is a main component. Regarding.
近年、通信に用いられる高周波帯の周波数はま
すます高く(波長は短く)なり、このために用い
られる発振器は誘電体基板面に配設形成されたマ
イクロストリツプラインと誘電体共振器(以下、
単にDRと略称する)を結合させる構成が小形で
あり、かつ、効率がよい。このような構成におい
ては、DRの近傍に共振回路の高周波損失の原因
となる誘電体基板が存在することにより、DRの
Qが低下する。従つて、このQの低下を可能な限
り少なくすることが必要である。 In recent years, the frequencies of high-frequency bands used for communication have become higher (wavelengths shorter), and the oscillators used for this purpose are microstrip lines and dielectric resonators (hereinafter referred to as
(abbreviated simply as DR) is compact and efficient. In such a configuration, the presence of a dielectric substrate near the DR that causes high frequency loss in the resonant circuit reduces the Q of the DR. Therefore, it is necessary to minimize this decrease in Q.
(b) 従来の技術
第2図は、従来の発振器を説明するためのa図
は側断面図、b図は平面図、をそれぞれ概略的に
示す。(b) Prior Art FIG. 2 schematically shows a conventional oscillator, with Figure a being a side sectional view and Figure B being a plan view.
第2図において、金属基板1上に、下面全体に
接地層、上面にマイクロストリツプライン3、お
よび、これに外部から直流バイアスを供給するた
めのローパス回路10、を配設形成してなる誘電
体基板2と、マイクロストリツプライン3の端部
にガンダイオード等の半導体素子4を配置接続す
る。 In FIG. 2, a dielectric layer is formed by arranging and forming a ground layer on the entire bottom surface of a metal substrate 1, a microstrip line 3 on the top surface, and a low-pass circuit 10 for supplying a DC bias to this from the outside. A semiconductor element 4 such as a Gunn diode is arranged and connected to the end of the body substrate 2 and the microstrip line 3.
一方、金属基板1上の、上記誘電体基板2を含
んで、これらを上部から覆う鋼等からなる金属筐
体6には、上面にねじ孔が貫通刻設され、下端面
に誘電体等からなるスペーサ8を介してDR5を
接着した周波数調整ねじ7が上記ねじ孔に螺入さ
れている。a図にもつともよく表わされているよ
うに、DR5の下端面はマイクロストリツプライ
ン3の一部を含んで誘電体基板2と全面的に対向
しており、ねじ7のいずれかの方向への螺回によ
り、矢印A,B方向に昇降し遠近することによ
り、共振周波数を微細に調整するこてが可能なよ
うなマイクロ波集積回路(以下、単にMICと略
称する)に構成されている。なお、誘電体基板2
はセラミツク材で構成される。 On the other hand, a metal casing 6 made of steel or the like that includes the dielectric substrate 2 and covers it from above, on the metal substrate 1, has a screw hole cut through the upper surface and a dielectric material etc. on the lower end surface. A frequency adjustment screw 7 to which a DR 5 is attached via a spacer 8 is screwed into the screw hole. As clearly shown in Figure a, the lower end surface of the DR5, including a part of the microstripline 3, completely faces the dielectric substrate 2, and It is configured as a microwave integrated circuit (hereinafter simply abbreviated as MIC) that can finely adjust the resonant frequency by moving up and down in the directions of arrows A and B using a spiral spiral. . Note that the dielectric substrate 2
is constructed of ceramic material.
(c) 発明が解決しようとする問題点
上記のような、マイクロストリツプライン3と
DR5との結合共振によるMICでは、DR5の全
面に対向近接した誘電体基板2の存在により、誘
電体基板2のtanδ(誘電体損失角)、誘電体基板2
を金属基板1に取り付けるための、半田または誘
電性接着剤等により、損失を生じることとなり、
その結果DR5のQが低下して出力損失が増加
し、共振周波数の安定度が悪化する。(c) Problems to be solved by the invention Microstripline 3 and
In the MIC due to coupled resonance with the DR5, due to the presence of the dielectric substrate 2 facing and close to the entire surface of the DR5, the tan δ (dielectric loss angle) of the dielectric substrate 2 and the dielectric substrate 2
Loss may occur due to solder or dielectric adhesive used to attach the
As a result, the Q of DR5 decreases, output loss increases, and the stability of the resonance frequency deteriorates.
上記問題点の解決策として、誘電体基板2の幅
をマイクロストリツプライン3の幅に近づけるこ
とが考えられるが、ローパス回路10等の他の付
属回路が1枚のセラミツク基板上に構成すること
ができなくなり、回路基板数が増加して集積度が
悪化する。このために、コストアツプとなるばか
りでなく、基板間の接続ポイントを要することか
ら回路全体の信頼度が低下する。さらには、基板
2の幅が細くなるので、これの機械的強度が十分
でないといつた、種々の問題点がある。 As a solution to the above problem, it is possible to make the width of the dielectric substrate 2 closer to the width of the microstrip line 3, but it is also possible to configure other accessory circuits such as the low-pass circuit 10 on one ceramic substrate. The number of circuit boards increases and the degree of integration deteriorates. This not only increases the cost, but also reduces the reliability of the entire circuit because connection points between the boards are required. Furthermore, since the width of the substrate 2 becomes narrow, there are various problems such as insufficient mechanical strength.
本発明は、上記の問題点に鑑みて、MICの集
積度を下げることなく、DR5のQが低下する問
題点を解決することにあり、DR5の電磁界と誘
電体基板2の干渉をできる限り少なくしてDR5
のQの低下を最小限にすることが可能な、新規な
る発振器の提供をすることを目的とする。 In view of the above-mentioned problems, the present invention aims to solve the problem that the Q of the DR5 decreases without reducing the degree of integration of the MIC, and to reduce the interference between the electromagnetic field of the DR5 and the dielectric substrate 2 as much as possible. Less DR5
It is an object of the present invention to provide a new oscillator that can minimize the decrease in Q of the oscillator.
(d) 問題点を解決するための手段
上記目的を達成するための、本発明の構成手段
は、誘電体基板上に形成されたマイクロストリツ
プラインに対向させて誘電体共振器を結合させる
構成の発振器において、上記結合部のマイクロス
トリツプラインを誘電体基板の端部に偏位させる
とともに誘電体共振器の対向端面の少なくとも一
部が誘電体基板の端部外に臨むように位置させた
ことを特徴とする発振器である。(d) Means for Solving the Problems To achieve the above object, the configuration means of the present invention has a configuration in which a dielectric resonator is coupled to face a microstrip line formed on a dielectric substrate. In the oscillator, the microstrip line of the coupling part is offset to the end of the dielectric substrate, and at least a part of the opposing end surface of the dielectric resonator is positioned so as to face outside the end of the dielectric substrate. This is an oscillator characterized by the following.
(e) 作用
上記構成にあつては、マイクロストリツプライ
ンを誘電体基板の端部に偏位させ、しかも、これ
と対向対面する誘電体共振器の対向面の少なくと
も一部を誘電体基板と対向しないようにしたこと
により、好ましくは、大部分を対向しないように
退避した位置とすることにより、誘電体共振器の
磁界が誘電体基板に影響されることが、可能な限
り少なくなるので、損失が少なくなり、高いQ
と、出力損失の低損失化、周波数安定度の高安定
化、が得られる。(e) Effect In the above configuration, the microstrip line is deflected to the end of the dielectric substrate, and at least a part of the opposing surface of the dielectric resonator facing the microstrip line is formed with the dielectric substrate. By not facing each other, preferably by locating most of the parts in a retracted position so that they do not face each other, the influence of the dielectric resonator's magnetic field by the dielectric substrate is minimized. Less loss, higher Q
This results in lower output loss and higher frequency stability.
(f) 実施例
以下、図面を参照しながら、本発明に係る発振
器の実施例について、詳細に説明する。(f) Embodiments Hereinafter, embodiments of the oscillator according to the present invention will be described in detail with reference to the drawings.
第1図は、本発明に係る発振器の一実施例を説
明するための、a図は側断面図、b図は平面図、
である。第1図において、本実施例の発振器は第
2図の従来と同様、金属基板1、誘電体基板2、
マイクロストリツプライン3、DR5、金属筐体
6、周波数調整ねじ7、その他、等からなるが、
マイクロストリツプライン3とDR5の結合部位
置を移動(偏位)させたことに特徴点を有する。
このようなことから、同等部分には第2図と同符
号を付し、これらの部分についての説明は省略す
るが、同等と理解されたい。 FIG. 1 is a side sectional view for explaining an embodiment of an oscillator according to the present invention, and FIG. 1 is a side sectional view, and FIG.
It is. In FIG. 1, the oscillator of this embodiment has a metal substrate 1, a dielectric substrate 2,
It consists of a microstripline 3, DR5, metal housing 6, frequency adjustment screw 7, and others.
The feature is that the joint position of the microstripline 3 and DR5 has been moved (deviated).
For this reason, the same parts are given the same reference numerals as in FIG. 2, and explanations of these parts will be omitted, but it should be understood that they are equivalent.
第1図において、マイクロストリツプライン3
はDR5との結合部において、誘電体基板2の端
部に位置するように迂回曲折させた偏位結合部9
を形成する。そうして、下端面にDR5を誘電体
スペーサ8を介して接着固定した周波数調整ねじ
7の位置を、マイクロストリツプライン3の偏位
結合部9に対して、DR5の対向端面が誘電体基
板2の端部外とはその少なくとも一部が対向する
ようにして誘電体基板2の端部外に対向位置させ
るように設定される。このようなことは、金属筐
体6のねじ孔の位置が第2図とは所定に偏位され
ることによつて得られる。 In Figure 1, microstrip line 3
is a deflection coupling part 9 which is bent in a detour so as to be located at the end of the dielectric substrate 2 at the coupling part with the DR5.
form. Then, adjust the position of the frequency adjustment screw 7, on which the DR5 is adhesively fixed to the lower end surface via the dielectric spacer 8, so that the opposite end surface of the DR5 is on the dielectric substrate with respect to the deflection coupling part 9 of the microstripline 3. The dielectric substrate 2 is set so that at least a part thereof is opposed to the outside of the end of the dielectric substrate 2 . This can be achieved by deviating the position of the screw hole in the metal housing 6 to a predetermined position from that shown in FIG.
DR5と上記基板2との対向重なり量は使用周
波数帯域、Qの設定許容限界、等、諸種の条件に
より定められる。 The amount of overlapping between the DR 5 and the substrate 2 is determined by various conditions such as the frequency band used, the allowable limit for Q setting, and the like.
以上の構成により、DR5の磁界が対向位置に
ある誘電体基板に影響されることがなくなる分、
従来に比して損失が少なくなる。 With the above configuration, the magnetic field of DR5 is not affected by the dielectric substrate located at the opposing position.
Loss is lower than before.
(g) 発明の効果
以上の説明から明らかなように、本発明に係る
発振器によれば、MICの集積度を下げることな
く、高集積化、高密度実装化が可能となり、DR
のQの低下を最小限とすることができるので、出
力、周波数安定度、等、発振器の特性向上に寄与
するところが大である。また、共振周波数の微細
な調整も、低損失、高Qの状態で行える。ミリ波
帯ではQの値が小さくなるので、本発明によれ
ば、とくに顕著な効果が得られる。(g) Effects of the invention As is clear from the above explanation, the oscillator according to the present invention enables high integration and high-density packaging without reducing the degree of MIC integration.
Since the reduction in the Q of the oscillator can be minimized, it greatly contributes to improving the characteristics of the oscillator, such as output and frequency stability. Furthermore, fine adjustment of the resonant frequency can be performed with low loss and high Q. Since the value of Q is small in the millimeter wave band, particularly remarkable effects can be obtained according to the present invention.
第1図は本発明にかかる発振器の一実施例を説
明するための、a図は側断面図、b図は平面図、
第2図は従来の発振器を説明するための、a図は
側断面図、b図は平面図、である。
図において、1は金属基板、2は誘電体基板、
3はマイクロストリツプライン、4は半導体素
子、5はDR、6は金属筐体、7は周波数調整ね
じ、8は誘電体スペーサ、9は偏位結合部、10
はローパス回路。
FIG. 1 is for explaining one embodiment of the oscillator according to the present invention; FIG. 1A is a side sectional view, FIG. 1B is a plan view,
FIG. 2 is a side cross-sectional view and a plan view, respectively, for explaining a conventional oscillator. In the figure, 1 is a metal substrate, 2 is a dielectric substrate,
3 is a microstrip line, 4 is a semiconductor element, 5 is a DR, 6 is a metal housing, 7 is a frequency adjustment screw, 8 is a dielectric spacer, 9 is a deflection coupling part, 10
is a low-pass circuit.
Claims (1)
ツプライン3に対向させて誘電体共振器5を結合
させる構成の発振器において、結合部の上記マイ
クロストリツプライン3を上記誘電体基板2の端
部に位置するよう迂回曲折させるとともに上記誘
電体共振器5の対向端面の少なくとも一部が該誘
電体基板2の端部外に臨むように位置させたこと
を特徴とする発振器。 2 金属基板1上の上記誘電体基板2を含んで、
これらを上部から覆う金属筐体6の上面にねじ孔
を貫通刻設し、該ねじ孔に螺入される調整ねじ7
の下端面にスペーサを介して上記誘電体共振器5
を固定して上記マイクロストリツプライン3に対
向して遠近可能に支持させたことを特徴とする特
許請求の範囲第1項に記載の発振器。[Scope of Claims] 1. In an oscillator configured to couple a dielectric resonator 5 facing a microstripline 3 formed on a dielectric substrate 2, the microstripline 3 of the coupling portion is connected to the dielectric An oscillator characterized in that the dielectric resonator 5 is bent in a detour so as to be located at an end of the dielectric substrate 2, and at least a part of the opposing end surface of the dielectric resonator 5 is located outside the end of the dielectric substrate 2. . 2 Including the dielectric substrate 2 on the metal substrate 1,
A screw hole is cut through the top surface of the metal casing 6 that covers these from above, and an adjustment screw 7 is screwed into the screw hole.
The dielectric resonator 5 is connected to the lower end surface of the dielectric resonator 5 via a spacer.
2. The oscillator according to claim 1, wherein the oscillator is fixed and supported opposite to the microstrip line 3 so as to be able to come and go from a distance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59104245A JPS60247305A (en) | 1984-05-22 | 1984-05-22 | Oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59104245A JPS60247305A (en) | 1984-05-22 | 1984-05-22 | Oscillator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60247305A JPS60247305A (en) | 1985-12-07 |
JPH0428163B2 true JPH0428163B2 (en) | 1992-05-13 |
Family
ID=14375557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59104245A Granted JPS60247305A (en) | 1984-05-22 | 1984-05-22 | Oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60247305A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04294616A (en) * | 1991-03-23 | 1992-10-19 | Fukushima Nippon Denki Kk | Voltage controlled oscillator |
JPH054612U (en) * | 1991-06-27 | 1993-01-22 | 日本電気株式会社 | Oscillator |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5553907A (en) * | 1978-10-17 | 1980-04-19 | Hitachi Ltd | Microwave oscillator |
-
1984
- 1984-05-22 JP JP59104245A patent/JPS60247305A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5553907A (en) * | 1978-10-17 | 1980-04-19 | Hitachi Ltd | Microwave oscillator |
Also Published As
Publication number | Publication date |
---|---|
JPS60247305A (en) | 1985-12-07 |
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