JPH08252549A - 基板から汚染物を取り除く方法 - Google Patents

基板から汚染物を取り除く方法

Info

Publication number
JPH08252549A
JPH08252549A JP1064196A JP1064196A JPH08252549A JP H08252549 A JPH08252549 A JP H08252549A JP 1064196 A JP1064196 A JP 1064196A JP 1064196 A JP1064196 A JP 1064196A JP H08252549 A JPH08252549 A JP H08252549A
Authority
JP
Japan
Prior art keywords
contaminants
substrate
dense phase
gas
phase gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1064196A
Other languages
English (en)
Japanese (ja)
Inventor
Monte A Douglas
エイ ダグラス モンティ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH08252549A publication Critical patent/JPH08252549A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P70/15—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP1064196A 1995-01-26 1996-01-25 基板から汚染物を取り除く方法 Pending JPH08252549A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37843895A 1995-01-26 1995-01-26
US08/378438 1995-01-26

Publications (1)

Publication Number Publication Date
JPH08252549A true JPH08252549A (ja) 1996-10-01

Family

ID=23493142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1064196A Pending JPH08252549A (ja) 1995-01-26 1996-01-25 基板から汚染物を取り除く方法

Country Status (3)

Country Link
EP (1) EP0726099B1 (enExample)
JP (1) JPH08252549A (enExample)
DE (1) DE69610652T2 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324778A (ja) * 2001-04-25 2002-11-08 Sony Corp 表面処理方法
JP2004363404A (ja) * 2003-06-05 2004-12-24 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法
JP2006513582A (ja) * 2003-01-27 2006-04-20 マイセル・テクノロジーズ，インコーポレイテッド マイクロエレクトロニクス及び他の工業プロセスにおける超臨界流体の移送方法
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7186093B2 (en) 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
US7225820B2 (en) 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7255772B2 (en) 2000-07-26 2007-08-14 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US7380984B2 (en) 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
TW539918B (en) 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
EP1234322A2 (en) 1999-11-02 2002-08-28 Tokyo Electron Limited Method and apparatus for supercritical processing of multiple workpieces
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
WO2001082368A2 (en) 2000-04-25 2001-11-01 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6425956B1 (en) 2001-01-05 2002-07-30 International Business Machines Corporation Process for removing chemical mechanical polishing residual slurry
US6782900B2 (en) * 2001-09-13 2004-08-31 Micell Technologies, Inc. Methods and apparatus for cleaning and/or treating a substrate using CO2
JP3883929B2 (ja) 2001-09-25 2007-02-21 大日本スクリーン製造株式会社 薄膜形成装置および薄膜形成方法
CA2472478A1 (en) * 2002-01-07 2003-07-17 John Frederic Billingham Method for cleaning an article
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
WO2003070846A2 (en) 2002-02-15 2003-08-28 Supercritical Systems Inc. Drying resist with a solvent bath and supercritical co2
AU2003220039A1 (en) 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
US7282099B2 (en) 2002-09-24 2007-10-16 Air Products And Chemicals, Inc. Dense phase processing fluids for microelectronic component manufacture
US20050183740A1 (en) * 2004-02-19 2005-08-25 Fulton John L. Process and apparatus for removing residues from semiconductor substrates
US7190512B2 (en) 2004-04-29 2007-03-13 Mitsubishi Heavy Industries, Ltd. Optical properties restoration apparatus, the restoration method, and an optical system used in the apparatus
DE102004021336B4 (de) * 2004-04-30 2008-11-27 Mitsubishi Heavy Industries, Ltd. Vorrichtung und Verfahren zur Verbesserung optischer Eigenschaften und in der Vorrichtung verwendetes optisches System
US7250374B2 (en) 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7140393B2 (en) 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US7434590B2 (en) 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7435447B2 (en) 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7767145B2 (en) 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7494107B2 (en) 2005-03-30 2009-02-24 Supercritical Systems, Inc. Gate valve for plus-atmospheric pressure semiconductor process vessels
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7524383B2 (en) 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
FR2929138A1 (fr) * 2008-09-24 2009-10-02 Air Liquide Procede de nettoyage d'un support notamment d'un dispositif de type semi-conducteur.
CN106733836B (zh) * 2016-12-20 2023-05-23 重庆科本科技股份有限公司 一种清洗工艺及清洗系统
CN113731937B (zh) * 2021-09-10 2023-04-14 山东新华医疗器械股份有限公司 真空超声波清洗机压力控制优化方法
CN117782878B (zh) * 2024-02-26 2024-04-26 太原理工大学 一种实时测量气体在液体中溶解参数的恒压装置及方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US5267455A (en) * 1992-07-13 1993-12-07 The Clorox Company Liquid/supercritical carbon dioxide dry cleaning system

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7255772B2 (en) 2000-07-26 2007-08-14 Tokyo Electron Limited High pressure processing chamber for semiconductor substrate
JP2002324778A (ja) * 2001-04-25 2002-11-08 Sony Corp 表面処理方法
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
JP2006513582A (ja) * 2003-01-27 2006-04-20 マイセル・テクノロジーズ，インコーポレイテッド マイクロエレクトロニクス及び他の工業プロセスにおける超臨界流体の移送方法
US7225820B2 (en) 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
JP2004363404A (ja) * 2003-06-05 2004-12-24 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
US7186093B2 (en) 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
US7380984B2 (en) 2005-03-28 2008-06-03 Tokyo Electron Limited Process flow thermocouple

Also Published As

Publication number Publication date
DE69610652T2 (de) 2001-05-10
DE69610652D1 (de) 2000-11-23
EP0726099A3 (enExample) 1996-09-11
EP0726099A2 (en) 1996-08-14
EP0726099B1 (en) 2000-10-18

Similar Documents

Publication Publication Date Title
JPH08252549A (ja) 基板から汚染物を取り除く方法
US5013366A (en) Cleaning process using phase shifting of dense phase gases
EP0391035B1 (en) Dense fluid photochemical process for substrate treatment
EP0583653B2 (en) Cleaning by cavitation in liquefied gas
US6800142B1 (en) Method for removing photoresist and post-etch residue using activated peroxide followed by supercritical fluid treatment
KR100853354B1 (ko) 초임계수산화법에 의한 오염된 물품의 세척 방법
TWI627667B (zh) 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
US20070246064A1 (en) Method of treating a substrate
WO1999049998A1 (en) Composition and method for removing photoresist materials from electronic components
AU6629794A (en) Removal of surface contaminants by irradiation
TW200405459A (en) Processing of semiconductor components with dense processing fluids and ultrasonic energy
CN1735467A (zh) 利用密相气体和声波处理基片的基片处理设备
TWI261290B (en) Removal of contaminants using supercritical processing
JP2008541479A (ja) 極性流体を表面から超臨界流体を用いて除去する方式
WO2009142281A1 (ja) フッ素化合物による洗浄方法
JP2006528845A (ja) 超臨界ウエハー処理装置の汚染除去
KR100557247B1 (ko) 맥동 유체를 제공하기 위한 장치 및 방법
GB2237504A (en) Ultrasonic cleaning
JP5252918B2 (ja) 超臨界流体に化学物質を注入する方法及びシステム
JPH0547732A (ja) 精密洗浄方法および精密洗浄装置
DE68903947T2 (de) Reinigungsverfahren unter verwendung von phasenverschiebung von dichten gasphasen.
Engelsberg Particle Removal from Semiconductor Surfaces Using a Photon-Assisted, Gas-Phase Cleaning Process
JP2004088095A (ja) 洗浄方法
TW202330121A (zh) 光學或電子束系統中之組件之超臨界流體清洗

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050419

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050509

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20051024