JPH08241901A - Method for manufacturing semiconductor package - Google Patents
Method for manufacturing semiconductor packageInfo
- Publication number
- JPH08241901A JPH08241901A JP4377995A JP4377995A JPH08241901A JP H08241901 A JPH08241901 A JP H08241901A JP 4377995 A JP4377995 A JP 4377995A JP 4377995 A JP4377995 A JP 4377995A JP H08241901 A JPH08241901 A JP H08241901A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sealing material
- mold
- semiconductor package
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
- B29C2045/14663—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame the mould cavity walls being lined with a film, e.g. release film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置を樹脂封止
してなる半導体パッケージの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor package which is obtained by sealing a semiconductor device with a resin.
【０００２】[0002]
【従来の技術】例えばチップ状のＬＳＩ等の半導体装置
を樹脂で封止してパッケージ化する方法として、トラン
スファ−成形による方法がある。これは、粉末状または
タブレット状の樹脂を加熱・加圧して溶融させたのち金
型に注入して固化させることによりパッケージ化するも
ので、これによれば、金型への樹脂注入を低速で行うこ
とで、一定品質の半導体パッケージを比較的低コストで
大量に生産することができる。このため、半導体装置の
樹脂封止方法として、従来は、上記トランスファ−成形
による方法が最も多く用いられてきた。2. Description of the Related Art As a method of sealing a semiconductor device such as a chip-like LSI with a resin and packaging it, there is a method by transfer molding. In this method, powdered or tablet-shaped resin is heated and pressurized to melt it, then it is poured into a mold and solidified to be packaged. According to this, the resin can be injected into the mold at a low speed. By doing so, it is possible to mass-produce semiconductor packages of constant quality at a relatively low cost. Therefore, as a resin sealing method for semiconductor devices, the transfer molding method has been most often used conventionally.
【０００３】しかしながら、近年における半導体装置の
低価格化の要求に伴い、上述のような半導体装置の樹脂
封止の分野においても生産性の大幅な向上が必要となっ
てきた。その場合に、従来のトランスファ−成形方法に
おいては、封止材料である樹脂の付着等により汚れた金
型を頻繁にクリーニングする必要があること、また成形
後に金型からエジェクトピンを突き出して半導体パッケ
ージを離型させる際に半導体装置に対してダメージを与
えるおそれがあること、さらには金型にそのようなエジ
ェクトピンの突き出し機構を設けなければならならい分
だけ金型コストが高くつくこと等の問題があったことか
ら、本願発明者らは、これらの問題を解消して生産性を
大幅に向上させうる技術として、次のような半導体パッ
ケージの製造方法を提案している。However, with the recent demand for lower prices of semiconductor devices, it has become necessary to greatly improve productivity in the field of resin sealing of semiconductor devices as described above. In that case, in the conventional transfer molding method, it is necessary to frequently clean the mold that has become dirty due to the adhesion of the resin that is the sealing material, and after the molding, the eject pin is ejected from the mold to form a semiconductor package. There is a risk that the semiconductor device may be damaged when the mold is released, and that the mold cost is high due to the fact that such a mold for ejecting eject pins must be provided. Therefore, the inventors of the present application have proposed the following semiconductor package manufacturing method as a technique capable of solving these problems and greatly improving productivity.
【０００４】すなわち、半導体装置を樹脂封止してなる
半導体パッケージを製造するに際し、半導体パッケージ
成形用金型上に第１フィルムを介して半導体装置および
封止材料をセットし、その上に第２フィルムを被せたの
ち、金型を閉じ、次いで同フィルム間の封止材料を加圧
および加熱して金型キャビティ内に注入することによ
り、上記半導体装置を封止するというものである。これ
によれば、金型キャビティ面に封止材料である樹脂を直
接接触させることなく半導体パッケージを成形すること
ができるから金型が汚れず、また成形後はフィルム間に
保持された半導体パッケージを同フィルムごと金型から
簡単に分離させることができるからエジェクトピンがな
くても済むこととなる。したがって、金型のクリーニン
グ回数の削減による連続成形性の大幅な向上と、エジェ
クトピンの不要化による金型コストの削減、ひいては生
産性の大幅な向上を図ることができる。That is, when manufacturing a semiconductor package in which a semiconductor device is resin-sealed, the semiconductor device and the sealing material are set on a mold for molding the semiconductor package via the first film, and then the second film is placed thereon. After the film is covered, the mold is closed, and then the sealing material between the films is pressurized and heated to be injected into the mold cavity to seal the semiconductor device. According to this, the semiconductor package can be molded without directly contacting the mold cavity surface with the resin as the sealing material, so that the mold does not become dirty and the semiconductor package held between the films after molding is Since the same film can be easily separated from the mold, there is no need for an eject pin. Therefore, it is possible to significantly improve the continuous moldability by reducing the number of times of cleaning the mold, reduce the cost of the mold by eliminating the need for the eject pin, and thereby significantly improve the productivity.
【０００５】[0005]
【発明が解決しようとする課題】上述したような半導体
パッケージの製造方法において、金型キャビティ内への
封止材料の注入を良好に行わせるには、封止材料は前も
って第１フィルム（下側のフィルム）上の所定位置、具
体的には金型のポット部の上に確実にセットされていな
ければならない。ところが、封止材料をセットする際
に、封止材料がそのセットされるべき第１フィルム上の
所定位置から移動する場合がある。このような場合、封
止材料がズレた状態のまま金型を閉じて封止材料を加熱
・加圧すると、封止材料が所定の流路を経ずに流れ、結
果的に成形不良が発生するという問題が生じる。In the method of manufacturing a semiconductor package as described above, in order to satisfactorily inject the sealing material into the mold cavity, the sealing material is previously formed in the first film (lower side). Must be securely set at a predetermined position on the film), specifically, on the pot part of the mold. However, when setting the sealing material, the sealing material may move from a predetermined position on the first film to be set. In such a case, if the mold is closed and the sealing material is heated and pressed while the sealing material is misaligned, the sealing material flows without passing through a predetermined flow path, resulting in defective molding. The problem arises.
【０００６】本発明は、このような問題に対処するもの
で、一対のフィルムを用いて半導体パッケージを製造す
る場合に、フィルム上の所定位置に封止材料が確実にセ
ットされるようにすることで、その封止材料のセット時
における位置ズレを防止し、ひいては上記半導体パッケ
ージの製造工程における信頼性を向上させることを目的
とする。The present invention addresses such a problem, and when a semiconductor package is manufactured using a pair of films, the sealing material is surely set at a predetermined position on the films. Therefore, it is an object of the present invention to prevent the positional deviation when the sealing material is set and to improve the reliability in the manufacturing process of the semiconductor package.
【０００７】[0007]
【課題を解決するための手段】上記目的達成のため、本
発明は、半導体装置を樹脂封止してなる半導体パッケー
ジを製造するに際し、半導体パッケージ成形用金型上に
第１フィルムを介して半導体装置および封止材料をセッ
トし、その上に第２フィルムを被せたのち、金型を閉
じ、次いでその両フィルム間の封止材料を加圧および加
熱して金型キャビティ内に注入することにより、半導体
装置を封止する半導体パッケージの製造方法において、
上記封止材料がセットされる金型のポット部にフィルム
吸着手段をあらかじめ設けておき、その金型上に第１フ
ィルムを介して封止材料をセットする際に、上記フィル
ム吸着手段によってポット部上の第１フィルムを同ポッ
ト部の表面に吸着させ、その状態で同ポット部上に封止
材料をセットすることを特徴とする。To achieve the above object, the present invention provides a semiconductor package formed by resin-sealing a semiconductor device, wherein a semiconductor film is formed on a semiconductor package molding die via a first film. By setting the device and the sealing material, covering it with a second film, closing the mold, and then pressing and heating the sealing material between the two films to inject it into the mold cavity. A method of manufacturing a semiconductor package for encapsulating a semiconductor device,
A film suction means is provided in advance in the pot part of the mold in which the sealing material is set, and when the sealing material is set on the mold via the first film, the pot part is removed by the film suction means. It is characterized in that the upper first film is adsorbed on the surface of the pot portion, and the sealing material is set on the pot portion in that state.
【０００８】ここで、フィルム吸着手段については、例
えば、金型のポット部に備えられた封止材料加圧用プラ
ンジャ−に、その軸方向に沿って貫通するように吸引孔
を設け、この吸引孔の一端側をプランジャーの先端面
（押圧面）に位置させるとともに、その他端側を金型外
の吸引源（例えば吸引ポンプ）に接続させ、この吸引孔
を介して外部の吸引源により金型ポット部側を吸引して
同ポット部表面に第１フィルムを吸着させるようにした
システムを採用することができる。その場合、成形時に
加えられる圧力により同フィルムが吸引孔に押し付けら
れて破断することを防止する手段として、第１フィルム
上の封止材料をセットする位置に、パッケージ成形時の
温度に耐えうる耐熱性と所定の強度とを有する耐熱材料
層を設けてもよい。Here, as for the film suction means, for example, a sealing material pressurizing plunger provided in a pot portion of a mold is provided with a suction hole so as to penetrate along the axial direction thereof. One end side of the mold is located on the tip end surface (pressing surface) of the plunger, and the other end side is connected to a suction source (for example, a suction pump) outside the mold, and the mold is pressed by an external suction source through this suction hole. It is possible to employ a system in which the pot portion side is sucked and the first film is attracted to the surface of the pot portion. In that case, as a means to prevent the film from being pressed against the suction holes and broken by the pressure applied at the time of molding, the heat resistance that can withstand the temperature at the time of molding the package is set at the position where the sealing material is set on the first film. A heat-resistant material layer having heat resistance and predetermined strength may be provided.
【０００９】本発明に用いられる第１および第２フィル
ムとしては、封止工程における高温時（１７５°Ｃ）の
引張強さが０．５〜１５．０ｋｇｆ／ｍｍ2 であり、か
つ、その高温時の伸び率が押出方向および直角方向のい
ずれにおいても２００％以上であるようなフィルムがよ
い。この場合の１７５°Ｃにおける引張強さおよび伸び
率は、ＪＩＳＣ２３１８に準拠して測定した値である。
このようなフィルムを推奨するのは次のような理由によ
る。すなわち、キャビティ内への封止材料の注入・充填
時には、その圧力を受けて第１および第２フィルムが金
型内面の凹凸、すなわちランナ部、ゲート部およびキャ
ビティの凹凸に沿おうとして、それらのフィルムに金型
内面の凹凸形状および封止材料の注入圧に応じた引張力
が作用するため、フィルムが当該引張力に応じて伸びな
いと、上記凹凸に沿うことができずに破断してしまうお
それがあるが、上述の引張強さおよび伸び率を有するフ
ィルムであれば、その引張力に応じて破断することなく
伸びてキャビティ面に所定の状態に沿うようになるから
である。The first and second films used in the present invention have a tensile strength of 0.5 to 15.0 kgf / mm 2 at a high temperature (175 ° C.) in the sealing step, and the high temperature. A film having an elongation at time of 200% or more in both the extrusion direction and the perpendicular direction is preferable. The tensile strength and elongation at 175 ° C in this case are values measured according to JIS C2318.
The reason for recommending such a film is as follows. That is, at the time of injecting / filling the sealing material into the cavity, the first and second films receive the pressure and try to follow the irregularities of the inner surface of the mold, that is, the irregularities of the runner portion, the gate portion, and the cavity. Since the tensile force according to the uneven shape of the inner surface of the mold and the injection pressure of the sealing material acts on the film, if the film does not stretch according to the tensile force, it cannot follow the unevenness and is broken. Although there is a possibility that the film has the above-mentioned tensile strength and elongation, the film stretches according to the tensile force without breaking and comes to follow a predetermined state on the cavity surface.
【００１０】また、本発明で用いるフィルムの材料とし
ては、例えば、ポリエチレンテレフタレート（ＰＥ
Ｔ）、ポリブチレンテレフタレート（ＰＢＴ）、ポリス
チレン（ＰＳ）、ポリテトラフルオロエチレン（ＰＴＦ
Ｅ）、ナイロン等をあげることができる。また、上述し
た性能を有するフィルムであれば、その厚みは任意であ
るが、一般的には、６μｍ〜１ｍｍ厚のものが使用でき
る。なお、封止材料との離型性を向上させるため、フィ
ルム表面に離型処理を施してもよい。The material of the film used in the present invention is, for example, polyethylene terephthalate (PE
T), polybutylene terephthalate (PBT), polystyrene (PS), polytetrafluoroethylene (PTF)
E), nylon, etc. can be mentioned. Further, the thickness of the film is arbitrary as long as it has the above-mentioned performance, but generally, a film having a thickness of 6 μm to 1 mm can be used. In addition, in order to improve the releasability from the sealing material, the film surface may be subjected to a releasing treatment.
【００１１】また、上述の耐熱材料層を構成する材料
は、成形温度（通常１５０〜２００°Ｃ）において耐熱
性および強度（好ましくは１７５°Ｃでの引張強さが２
０ｋｇｆ／ｍｍ2 以上：ＪＩＳ Ｃ２３１８に準拠して
測定した値）を有するものであれば任意である。具体的
には、ポリイミドフィルムやアルミ箔などを挙げること
ができる。この種の耐熱材料の厚みは通常、６〜１００
μｍが好ましい。このような耐熱材料は、耐熱性を有す
る粘着剤あるいは接着剤により上記第１フィルム上の所
定位置に取付けられる。The material constituting the heat resistant material layer has heat resistance and strength (preferably a tensile strength of 2 at 175 ° C.) at a molding temperature (usually 150 to 200 ° C.).
0 kgf / mm 2 or more: Any value as long as it has a value measured according to JIS C2318). Specifically, a polyimide film, an aluminum foil, etc. can be mentioned. The thickness of this type of heat resistant material is usually 6 to 100.
μm is preferred. Such a heat-resistant material is attached to a predetermined position on the first film by a heat-resistant adhesive or adhesive.
【００１２】さらに、上記第１フィルムおよび／または
第２フィルムの表面（半導体装置を挟む側の面）には、
半導体装置のパッケージ性能を向上させるため、半導体
パッケージ成形時にそのパッケージ表面に転写される成
形時転写材料として、金属箔（例えば、アルミ箔）や高
熱伝導性樹脂等の材料を仮固定しておいてもよい。Furthermore, on the surface of the first film and / or the second film (the surface on the side sandwiching the semiconductor device),
In order to improve the package performance of the semiconductor device, a metal foil (for example, aluminum foil) or a high thermal conductive resin is temporarily fixed as a transfer material during molding that is transferred to the surface of the semiconductor package during molding. Good.
【００１３】[0013]
【作用】上記の構成によれば、半導体パッケージを製造
する場合、まずパッケージ成形用金型上に第１フィルム
がセットされ、次いで、その第１フィルムを介して半導
体装置および封止材料がセットされる。その際、第１フ
ィルム上の所定位置への封止材料のセットに先立って、
金型のポット部に設けられたフィルム吸着手段によって
第１フィルムが同ポット部の表面に吸着される。その結
果、その吸着されたフィルム部分が金型ポット部の表面
形状に沿うように変形して、第１フィルムには同ポット
部の表面形状に応じた凹部ができる。したがって、この
凹部、つまり第１フィルムが表面に吸着された状態とな
っている金型ポット部に封止材料をセットすることによ
り、封止材料の移動を防止することができる。According to the above construction, when a semiconductor package is manufactured, the first film is first set on the package molding die, and then the semiconductor device and the sealing material are set via the first film. It At that time, prior to setting the sealing material at a predetermined position on the first film,
The first film is adsorbed on the surface of the pot portion by the film adsorbing means provided in the pot portion of the mold. As a result, the adsorbed film portion is deformed so as to follow the surface shape of the mold pot portion, and a recess corresponding to the surface shape of the pot portion is formed on the first film. Therefore, it is possible to prevent the movement of the sealing material by setting the sealing material in the concave portion, that is, the mold pot portion in which the first film is adsorbed on the surface.
【００１４】このようにして金型上に第１フィルムを介
して半導体装置および封止材料がセットされた後、その
上に第２フィルムが被せられる。次いで、金型が閉じら
れた後、その状態で第１および第２の両フィルム間の封
止材料が加圧および加熱されて金型キャビティ内に注入
されることにより、半導体パッケージが成形される。After the semiconductor device and the sealing material are set on the mold through the first film in this manner, the second film is covered thereover. Next, after the mold is closed, the sealing material between the first and second films is pressurized and heated in that state and injected into the mold cavity, thereby molding the semiconductor package. .
【００１５】ところで、このような成形時における封止
材料に対する加圧は、金型ポット部に備えられたプラン
ジャーにより行われるが、上記吸着手段がそのプランジ
ャーに設けられた吸引孔である場合には、その吸引孔の
一端に対応位置する第１フィルム部分が成形時の圧力に
より同孔内側に押されて破断するおそれが生じる。しか
し、封止材料をセットすべき第１フィルム上の所定位置
に所定の耐熱性および強度を有する耐熱材料層をあらか
じめ設けておけば、その耐熱材料層によって吸引孔周辺
の第１フィルム部分が補強されるとともに、成形時の圧
力が直接的にはその耐熱材料層によって受けられること
となる。これにより、第１フィルムにおいて吸引孔に対
応位置する部分が成形時に加えられる圧力により破断す
ることを未然に防止することができる。By the way, the pressure applied to the sealing material at the time of molding is carried out by a plunger provided in the mold pot portion, but when the suction means is a suction hole provided in the plunger. However, there is a risk that the first film portion located at one end of the suction hole will be pushed inside the hole by the pressure at the time of molding and will be broken. However, if a heat-resistant material layer having predetermined heat resistance and strength is provided in advance at a predetermined position on the first film where the sealing material is to be set, the heat-resistant material layer reinforces the first film portion around the suction hole. At the same time, the pressure at the time of molding is directly received by the heat resistant material layer. This makes it possible to prevent the portion of the first film corresponding to the suction hole from breaking due to the pressure applied during molding.
【００１６】[0016]
【実施例】以下、本発明の実施例について説明する。ま
ず、この実施例で使用する半導体パッケージ製造装置に
ついて簡単に説明する。Embodiments of the present invention will be described below. First, the semiconductor package manufacturing apparatus used in this embodiment will be briefly described.
【００１７】図１に示すように、この半導体パッケージ
製造装置は、トランスファ成型機（図示せず）に取り付
けられる開閉可能な上下一対の金型１、２を有する。こ
れらの金型１、２には、半導体パッケージ成形用のキャ
ビティ３と、これに連通し且つ封止材料（樹脂）１１が
セットされる円形凹部状のポット部４とが形成されてい
るとともに、成形時に同金型１、２を所定温度まで加熱
するヒータ（図示せず）がそれぞれ備えられている。As shown in FIG. 1, this semiconductor package manufacturing apparatus has a pair of upper and lower molds 1, 2 which can be opened and closed and which are attached to a transfer molding machine (not shown). These molds 1 and 2 are provided with a cavity 3 for molding a semiconductor package, and a circular concave pot portion 4 communicating with the cavity 3 and in which a sealing material (resin) 11 is set. A heater (not shown) for heating the molds 1 and 2 to a predetermined temperature during molding is provided.
【００１８】上記下金型２のポット部４内には、封止材
料加圧用のプランジャー５が上下動可能に備えられてお
り、このプランジャー５に複数の吸引孔５ａ・・・５ａ
が設けられている。各吸引孔５ａは、図例ではプランジ
ャー５の外周部の近傍内側にあって、図示状態で上端側
に位置するプランジャー先端面（押圧面）側から下端面
（後端面）側に向かって同プランジャー５を軸方向に貫
通するように形成されている。そして、そのプランジャ
ー下端面側の吸引孔端部が図示しない外部の吸引源（例
えば吸引ポンプ）に接続されており、その外部の吸引源
側から各吸引孔５ａを介してポット部４側を吸引するこ
とにより、同ポット部４の表面側に後述する第１フィル
ム２１を吸着させることができるようになっている。A plunger 5 for pressurizing a sealing material is provided in the pot portion 4 of the lower mold 2 so as to be movable up and down, and the plunger 5 has a plurality of suction holes 5a ... 5a.
Is provided. In the illustrated example, each suction hole 5a is inside the vicinity of the outer peripheral portion of the plunger 5 and extends from the plunger tip surface (pressing surface) side located on the upper end side in the illustrated state toward the lower end surface (rear end surface) side. The plunger 5 is formed so as to penetrate therethrough in the axial direction. The end of the suction hole on the lower end surface side of the plunger is connected to an external suction source (for example, a suction pump) not shown, and the pot portion 4 side is connected from the external suction source side through the suction holes 5a. By sucking, the first film 21, which will be described later, can be adsorbed to the front surface side of the pot portion 4.
【００１９】次に、このような装置を用いて行う本実施
例方法について説明する。まず、図１に示すように、上
下の金型１、２を開いた状態で、このうちの下金型２上
にＰＴＦＥ製の第１フィルム（厚み４０μｍ）２１を敷
く。この場合において、第１フィルム２１上には、封止
材料１１をセットすべき所定位置に、成形温度（通常１
５０〜２００°Ｃ）に耐えうる耐熱性接着剤層（この例
では厚み１５μｍのゴム−エポキシ系接着剤層）２３を
介して同じく成形温度に耐えうる所定強度の耐熱材料層
（この例では厚み５０μｍのアルミ箔）２４をあらかじ
め設けておく。Next, the method of this embodiment performed by using such an apparatus will be described. First, as shown in FIG. 1, with the upper and lower molds 1 and 2 opened, a first film (thickness 40 μm) 21 made of PTFE is laid on the lower mold 2 among them. In this case, the molding temperature (normally 1
50 to 200 ° C.) through a heat resistant adhesive layer (rubber-epoxy adhesive layer having a thickness of 15 μm in this example) 23, a heat resistant material layer of a predetermined strength (thickness in this example) that can also withstand the molding temperature. A 50 μm aluminum foil) 24 is provided in advance.
【００２０】次いで、上記第１フィルム２１の上に、リ
ードフレーム１２上に固定された半導体装置１３と、封
止材料１１とを所定の状態にセットして、それらの上か
ら、第２フィルム（第１フィルム２１と同じく厚み４０
μｍのＰＴＦＥ製フィルム）２２を被せるのであるが、
その際、第１フィルム２１上への封止材料１１のセット
に先立って、ポット部４に備えられたプランジャー５の
各吸引孔５ａを介して外部の吸引源からポット部４側を
吸引する。Then, the semiconductor device 13 fixed on the lead frame 12 and the sealing material 11 are set in a predetermined state on the first film 21, and the second film ( Thickness 40 as the first film 21
It is covered with a (μm PTFE film) 22.
At that time, prior to setting the sealing material 11 on the first film 21, the pot portion 4 side is sucked from an external suction source through each suction hole 5a of the plunger 5 provided in the pot portion 4. .
【００２１】このようにすると、図２に示すように、第
１フィルム２１におけるポット部上方側に位置する部
分、つまり上述の耐熱材料層２４が設けられているフィ
ルム部分がポット部４の表面に吸着されて、そのフィル
ム部分に同ポット部４の表面形状に応じた凹部４’がで
きるから、その凹部４’内、つまりポット部４内の耐熱
材料層２４上に封止材料１１をセットする。そして、そ
の上から第２フィルム２２を被せることにより、図３に
示すように、第１および第２の両フィルム２１、２２間
に半導体装置１３および封止材料１１を所定の状態に挟
んだ状態で、上下の金型１、２を閉じる。By doing so, as shown in FIG. 2, the portion of the first film 21 located on the upper side of the pot portion, that is, the film portion provided with the above-mentioned heat resistant material layer 24 is on the surface of the pot portion 4. Since the concave portion 4'corresponding to the surface shape of the pot portion 4 is formed in the film portion by being adsorbed, the sealing material 11 is set in the concave portion 4 ', that is, on the heat resistant material layer 24 in the pot portion 4. . Then, by covering the second film 22 from above, as shown in FIG. 3, the semiconductor device 13 and the sealing material 11 are sandwiched between the first and second films 21 and 22 in a predetermined state. Then, the upper and lower molds 1 and 2 are closed.
【００２２】次に、この状態から、図４に示すようにプ
ランジャー５を押し上げてポット部４（凹部４’）内の
封止材料１１を加圧することにより、その封止材料１１
を可塑化させたうえで両フィルム２１、２２間を通じて
各キャビティ３内に充填する。Next, from this state, as shown in FIG. 4, the plunger 5 is pushed up to pressurize the sealing material 11 in the pot portion 4 (recess 4 '), so that the sealing material 11 is formed.
Is plasticized and then filled in each cavity 3 through both films 21 and 22.
【００２３】こうしてキャビティ３内に封止材料１１を
充填した後は、封止材料１１が硬化するのを待って金型
１、２を開き、その金型内からパッケージングされた半
導体装置１３つまり半導体パッケージ１４（図５、６参
照）を第１および第２フィルム２１、２２ごと取り出し
たうえで、図５に示すように半導体パッケージ１４の表
面から両フィルム２１、２２を剥離させ、さらに不要な
成形部分１５をカットする。これにより、図６に示すよ
うに、封止材料１１により形成された樹脂１１’で半導
体装置１３を封止してなる半導体パッケージ１４を得
る。After the cavity 3 is filled with the encapsulating material 11 in this way, the molds 1 and 2 are opened after the encapsulating material 11 is cured, and the semiconductor device 13 packaged from the mold is closed. After taking out the semiconductor package 14 (see FIGS. 5 and 6) together with the first and second films 21 and 22, the films 21 and 22 are separated from the surface of the semiconductor package 14 as shown in FIG. The molding portion 15 is cut. As a result, as shown in FIG. 6, the semiconductor package 14 obtained by sealing the semiconductor device 13 with the resin 11 ′ formed of the sealing material 11 is obtained.
【００２４】このような方法によれば、第１フィルム２
１上の所定位置に封止材料１１をセットする際、これに
先立って図２に示すように下金型２のポット部４上の第
１フィルム２１がプランジャー５における各吸引孔５ａ
を介して外部から吸引されて同ポット部表面に吸着され
ることにより、その第１フィルム２１の所定位置には同
ポット部４の表面形状に応じた凹部４’が形成されるの
で、この凹部４’に封止材料１１をセットすることで、
封止材料１１の位置ズレを確実に防止することができ
る。したがって、その後、図３および図４に示すように
第２フィルム２１を被せて上下の金型１、２を閉じ、そ
の状態で封止材料１１をプランジャ−５により加圧した
時には、封止材料１１は所定の経路を通ってキャビティ
３内に流入することとなる。これにより、封止材料１１
の位置ズレがあった場合に結果として生じる半導体パッ
ケージの成形不良の問題を未然に防止することができ
る。According to such a method, the first film 2
When the sealing material 11 is set at a predetermined position on the first mold 1, the first film 21 on the pot portion 4 of the lower mold 2 is moved to the suction holes 5a of the plunger 5 prior to this, as shown in FIG.
By being sucked from the outside via the outside and adsorbed to the surface of the pot portion, a concave portion 4'corresponding to the surface shape of the pot portion 4 is formed at a predetermined position of the first film 21. By setting the sealing material 11 in 4 ',
It is possible to reliably prevent the displacement of the sealing material 11. Therefore, after that, as shown in FIGS. 3 and 4, when the second film 21 is covered and the upper and lower molds 1 and 2 are closed and the sealing material 11 is pressed by the plunger 5 in that state, the sealing material is 11 will flow into the cavity 3 through a predetermined path. Thereby, the sealing material 11
It is possible to prevent the problem of defective molding of the semiconductor package, which occurs as a result of the positional deviation.
【００２５】ところで、上述のようにしてプランジャー
５に設けられた各吸引孔５ａを介して第１フィルム２１
を金型ポット部４の表面に吸着させると、成形時にプラ
ンジャー５を介してポット部４内の封止材料１１に加え
られる圧力により、その各吸引孔５ａの上端開口部近傍
のフィルム部分が破断するおそれが生じる。しかし、こ
の実施例においては、封止材料１１がセットされる第１
フィルム２１上の所定位置、つまりプランジャ−先端面
に吸着される位置に、所定の耐熱性および強度を有する
耐熱材料層２４があらかじめ接着されているから、成形
時の圧力が作用しても、その耐熱材料層２４によって上
記のような吸引孔近傍のフィルム部分の破断を確実に予
防することができる。By the way, the first film 21 is inserted through the suction holes 5a provided in the plunger 5 as described above.
Is adsorbed on the surface of the mold pot portion 4, the film portion near the upper end opening of each suction hole 5a is formed by the pressure applied to the sealing material 11 in the pot portion 4 via the plunger 5 during molding. It may break. However, in this embodiment, the first
Since the heat-resistant material layer 24 having predetermined heat resistance and strength is previously adhered to a predetermined position on the film 21, that is, a position where it is attracted to the tip end surface of the plunger, even if the pressure at the time of molding acts. The heat-resistant material layer 24 can reliably prevent the breakage of the film portion near the suction hole as described above.
【００２６】[0026]
【発明の効果】以上のように、本発明によれば、第１お
よび第２の両フィルム間に半導体装置および封止材料を
挟んだ状態で半導体パッケージを製造する方法におい
て、パッケージ成形用金型上に第１フィルムを介して封
止材料をセットする際に、金型ポット部の表面にその上
方側の第１フィルムを吸着させ、これによって形成され
た金型ポット部表面形状に対応する凹部に封止材料をセ
ットするので、その封止材料の位置ズレを防止すること
ができる。これにより、封止材料の位置ズレによる半導
体パッケージの成形不良が確実に防止され、この種の半
導体パッケージ製造方法における信頼性が向上されるこ
ととなる。As described above, according to the present invention, in a method of manufacturing a semiconductor package in which the semiconductor device and the sealing material are sandwiched between the first and second films, a mold for molding a package is provided. When the sealing material is set on top of the first film, the first film on the upper side of the mold pot is adsorbed to the surface of the mold pot, and the recess corresponding to the surface shape of the mold pot formed by this is formed. Since the encapsulating material is set in, the positional deviation of the encapsulating material can be prevented. As a result, the defective molding of the semiconductor package due to the displacement of the sealing material is reliably prevented, and the reliability in this type of semiconductor package manufacturing method is improved.
【図１】本発明実施例方法における一工程を示すもの
で、金型を開いた状態で一対のフィルム間に半導体装置
および封止材料をセットする状態を示す断面図FIG. 1 is a cross-sectional view showing a step in a method of an embodiment of the present invention, showing a state in which a semiconductor device and a sealing material are set between a pair of films with a mold opened.
【図２】その封止材料をセットする際に、それに先立っ
て金型ポット部の表面に第１フィルムを吸着させた状態
を示す断面図FIG. 2 is a cross-sectional view showing a state in which the first film is adsorbed on the surface of the mold pot portion prior to setting the sealing material.
【図３】その吸着後に金型ポット部内に封止材料をセッ
トして金型を閉じた状態を示す断面図FIG. 3 is a cross-sectional view showing a state in which a sealing material is set in the mold pot portion after the suction and the mold is closed.
【図４】その後に封止材料を加圧してキャビティ内に充
填した状態を示す断面図FIG. 4 is a cross-sectional view showing a state in which the sealing material is then pressurized and filled in the cavity.
【図５】成形後に金型外に取り出された半導体パッケー
ジの表面からフィルムを剥離させた状態を示す断面図FIG. 5 is a cross-sectional view showing a state in which the film is peeled from the surface of the semiconductor package taken out of the mold after molding.
【図６】最終的に得られた半導体パッケージを示す断面
図FIG. 6 is a sectional view showing a finally obtained semiconductor package.
１、２・・・半導体パッケージ成形用金型（１・・・上
金型、２・・・下金型） ３・・・キャビティ ４・・・ポット部 ５・・・プランジャー ５ａ・・・吸引孔 １１・・・封止材料 １３・・・半導体装置 ２１・・・第１フィルム ２２・・・第２フィルム ２４・・・耐熱材料層1, 2 ... Mold for molding semiconductor package (1 ... Upper mold, 2 ... Lower mold) 3 ... Cavity 4 ... Pot part 5 ... Plunger 5a ... Suction hole 11 ... Sealing material 13 ... Semiconductor device 21 ... First film 22 ... Second film 24 ... Heat-resistant material layer
Claims (4)
ッケージを製造するに際し、半導体パッケージ成形用金
型上に第１フィルムを介して半導体装置および封止材料
をセットし、その上に第２フィルムを被せたのち、金型
を閉じ、次いでその両フィルム間の封止材料を加圧およ
び加熱して金型キャビティ内に注入することにより、半
導体装置を封止する半導体パッケージの製造方法におい
て、上記封止材料がセットされる金型のポット部にフィ
ルム吸着手段をあらかじめ設けておき、その金型上に第
１フィルムを介して封止材料をセットする際に、上記フ
ィルム吸着手段によってポット部上の第１フィルムを同
ポット部の表面に吸着させ、その状態で同ポット部上に
封止材料をセットすることを特徴とする半導体パッケー
ジの製造方法。1. When manufacturing a semiconductor package formed by sealing a semiconductor device with a resin, the semiconductor device and a sealing material are set on a mold for molding a semiconductor package via a first film, and a second film is formed thereon. After covering the film, the mold is closed, and then the sealing material between the two films is pressurized and heated to be injected into the mold cavity, thereby manufacturing a semiconductor package for sealing a semiconductor device. A film suction means is provided in advance in the pot part of the mold in which the sealing material is set, and when the sealing material is set on the mold via the first film, the pot part is removed by the film suction means. A method for manufacturing a semiconductor package, wherein the upper first film is adsorbed on the surface of the pot portion, and in that state, a sealing material is set on the pot portion.
備えられた封止材料加圧用プランジャーに設けられ、か
つ、一端側がポット部に通じるように同プランジャ−の
先端面に位置し、他端側が金型外の吸引源に接続される
吸引孔によって構成されていることを特徴とする請求項
１に記載の半導体パッケージの製造方法。2. The film adsorbing means is provided on a sealing material pressurizing plunger provided in the pot part of the mold, and is located on the tip end surface of the plunger so that one end side communicates with the pot part. The method of manufacturing a semiconductor package according to claim 1, wherein the other end side is constituted by a suction hole connected to a suction source outside the mold.
される位置に、パッケージ成形時の温度に耐えうる耐熱
性と所定の強度とを有する耐熱材料層が設けられている
ことを特徴とする請求項１または２に記載の半導体パッ
ケージの製造方法。3. A heat-resistant material layer having heat resistance capable of withstanding the temperature at the time of molding the package and a predetermined strength is provided on the first film at a position where the sealing material is set. The method for manufacturing a semiconductor package according to claim 1 or 2.
ムには、半導体装置を封止材料で封止して半導体パッケ
ージを製造する際に同パッケージの表面に転写される成
形時転写材料が仮固定されていることを特徴とする請求
項１〜３のいずれかに記載の半導体パッケージの製造方
法。4. A transfer material during molding which is transferred to the surface of the first film and / or the second film when the semiconductor device is sealed with a sealing material to manufacture a semiconductor package is temporarily fixed to the first film and / or the second film. The method for manufacturing a semiconductor package according to claim 1, wherein the method is used for manufacturing a semiconductor package.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4377995A JPH08241901A (en) | 1995-03-03 | 1995-03-03 | Method for manufacturing semiconductor package |
| US08/568,690 US5846477A (en) | 1994-12-08 | 1995-12-07 | Production method for encapsulating a semiconductor device |
| KR1019950049117A KR960026492A (en) | 1994-12-08 | 1995-12-08 | Semiconductor device manufacturing method, molding film and mold used in the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4377995A JPH08241901A (en) | 1995-03-03 | 1995-03-03 | Method for manufacturing semiconductor package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08241901A true JPH08241901A (en) | 1996-09-17 |
Family
ID=12673251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4377995A Pending JPH08241901A (en) | 1994-12-08 | 1995-03-03 | Method for manufacturing semiconductor package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08241901A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6200121B1 (en) * | 1998-06-25 | 2001-03-13 | Nec Corporation | Process for concurrently molding semiconductor chips without void and wire weep and molding die used therein |
| JP2002160269A (en) * | 2000-11-27 | 2002-06-04 | Apic Yamada Corp | Mold apparatus for molding resin using release film |
| US11081374B2 (en) * | 2018-08-29 | 2021-08-03 | Samsung Electronics Co., Ltd. | Semiconductor package molding device and method of manufacturing semiconductor device |
-
1995
- 1995-03-03 JP JP4377995A patent/JPH08241901A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6200121B1 (en) * | 1998-06-25 | 2001-03-13 | Nec Corporation | Process for concurrently molding semiconductor chips without void and wire weep and molding die used therein |
| US6315540B1 (en) * | 1998-06-25 | 2001-11-13 | Nec Corporation | Molding die for concurrently molding semiconductor chips without voids and wire weep |
| JP2002160269A (en) * | 2000-11-27 | 2002-06-04 | Apic Yamada Corp | Mold apparatus for molding resin using release film |
| US11081374B2 (en) * | 2018-08-29 | 2021-08-03 | Samsung Electronics Co., Ltd. | Semiconductor package molding device and method of manufacturing semiconductor device |
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