JPH08236587A - Defective bonding detecting method and device in wire bonding device - Google Patents

Defective bonding detecting method and device in wire bonding device

Info

Publication number
JPH08236587A
JPH08236587A JP7064897A JP6489795A JPH08236587A JP H08236587 A JPH08236587 A JP H08236587A JP 7064897 A JP7064897 A JP 7064897A JP 6489795 A JP6489795 A JP 6489795A JP H08236587 A JPH08236587 A JP H08236587A
Authority
JP
Japan
Prior art keywords
bonding
wire
rectangular wave
output
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7064897A
Other languages
Japanese (ja)
Other versions
JP3335031B2 (en
Inventor
Masanao Ura
正直 浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to JP06489795A priority Critical patent/JP3335031B2/en
Publication of JPH08236587A publication Critical patent/JPH08236587A/en
Application granted granted Critical
Publication of JP3335031B2 publication Critical patent/JP3335031B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H01L2224/78271—Circuitry of the discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To provide the title defective bonding detecting device having capacity component such as MOS integrated circuit, etc. CONSTITUTION: A semiconductor device having the capacity component C such as MOS integrated circuit and to be bond-processed is supplied with rectangular wave signals transmitted from a rectangular wave generating circuit 1 through the intermediary of a constant current device 2 and a current transformer 3. Next, the differentiation current running into the capacity component C by a MOS integrated circuit is extracted from the current transformer 3 while the output integrated on one side only is fed to a level counter 6 wherein the defective bonding state can be detected.

Description

【発明の詳細な説明】Detailed Description of the Invention

【産業上の利用分野】本発明は、半導体デバイスの組立
工程に用いられるワイヤボンディング装置に係り、特に
ボンディング時におけるボンディング不着状態を検出す
る検出方法及び検出装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus used in a semiconductor device assembling process, and more particularly to a detecting method and a detecting apparatus for detecting a bonding failure state during bonding.

【０００２】[0002]

【従来の技術】半導体デバイスの組立工程に用いられる
ワイヤボンディング装置においては、金線又は銅、アル
ミニウムなどのワイヤを用いて第１ボンディング点とな
る半導体チップ上のパッド（電極）と、第２ボンディン
グ点となるリードとを接続するように成される。2. Description of the Related Art In a wire bonding apparatus used in a semiconductor device assembling process, a gold wire or a wire such as copper or aluminum is used to form a pad (electrode) on a semiconductor chip as a first bonding point and a second bonding point. It is formed so as to connect with a lead which becomes a dot.

【０００３】従来、この種のワイヤボンディング装置に
おいては、先ずボンディングツールとしてのキャピラリ
から突出したワイヤの先端と放電電極（電気トーチ）と
の間に高電圧を印加することにより放電を起こさせ、そ
の放電エネルギーによりワイヤの先端部を溶融してキャ
ピラリの先端にボールを形成するようにしている。Conventionally, in this type of wire bonding apparatus, first, a high voltage is applied between the tip of a wire protruding from a capillary as a bonding tool and a discharge electrode (electric torch) to cause discharge, and The tip of the wire is melted by the discharge energy to form a ball at the tip of the capillary.

【０００４】そして図３（ａ）乃至（ｃ）に示すよう
に、キャピラリ２０の先端に形成されたボール２１ａ
を、第１ボンディング点である半導体チップ２２上のパ
ッドに対して所定のボンディング荷重を加えつつ、超音
波及び他の加熱手段を併用して加熱を行い、ワイヤ２１
を接続するように成される。Then, as shown in FIGS. 3A to 3C, a ball 21a formed at the tip of the capillary 20.
While applying a predetermined bonding load to the pad on the semiconductor chip 22 which is the first bonding point, the wire 21 is heated by using ultrasonic waves and other heating means in combination.
Is made to connect.

【０００５】そして図３（ｄ）乃至（ｅ）に示すように
ワイヤ２１をキャピラリ２０の先端から繰り出しつつ、
キャピラリ２０を所定のループコントロールに従って相
対移動せしめ、キャピラリ２０を第２ボンディング点で
あるリード２３の直上に位置させる。さらに（ｆ）に示
すようにキャピラリ２０に所定のボンディング荷重を加
えつつ第２ボンディング点に圧着し、超音波及び他の加
熱手段を併用して加熱を行い、第２ボンディング点に対
してワイヤ２１を接続するように成される。Then, as shown in FIGS. 3 (d) to 3 (e), the wire 21 is extended from the tip of the capillary 20,
The capillary 20 is relatively moved according to a predetermined loop control, and the capillary 20 is positioned directly above the lead 23 which is the second bonding point. Further, as shown in (f), the capillary 20 is pressed against the second bonding point while applying a predetermined bonding load, heated by using ultrasonic waves and other heating means, and the wire 21 is applied to the second bonding point. Is made to connect.

【０００６】続いて（ｇ）に示すようにワイヤ２１をキ
ャピラリ２０の先端より所定のフィード量ｆだけ引き出
した状態でワイヤ２１を挿通するクランパ２４を閉じて
キャピラリ２０と共に上方に引き上げることにより、
（ｈ）に示すようにワイヤ２１は第２ボンディング点よ
り切断され、第１ボンディング点及び第２ボンディング
点との間にワイヤ２１の接続が完了する。Subsequently, as shown in (g), with the wire 21 pulled out from the tip of the capillary 20 by a predetermined feed amount f, the clamper 24 for inserting the wire 21 is closed and pulled up together with the capillary 20.
As shown in (h), the wire 21 is cut from the second bonding point, and the connection of the wire 21 is completed between the first bonding point and the second bonding point.

【０００７】以上のような工程によりワイヤボンディン
グがなされる。Wire bonding is performed by the above steps.

【０００８】図４は従来のボンディング装置におけるボ
ンディング不着検出の一例を示したものである。なお図
４において、前記図３と同一の符号で示した箇所は同一
部分でありその説明は省略する。FIG. 4 shows an example of non-bonding detection in a conventional bonding apparatus. Note that, in FIG. 4, the portions denoted by the same reference numerals as those in FIG. 3 are the same portions, and the description thereof will be omitted.

【０００９】このボンディング不着検出は、第１ボンデ
ィング点としてのパッドと第２ボンディング点としての
リードとが接続された状態で直流電流を検出することに
よってワイヤ切れ等のボンディング不着を検出する。従
って、前記第１ボンディング点又は第２ボンディング点
に正常なボンディングが成された場合には、前記クラン
パ２４よりワイヤ２１を介して半導体チップ２２のパッ
ドとベース２２ａ間で直流閉回路が形成される。そして
電流検出器（図示せず）によって直流電流を検出するこ
とで、第１ボンディング点又は第２ボンディング点に正
常にボンディングが成されたものと判定し、直流電流が
流れない場合には、ワイヤ切れ等であると判定するよう
にしている。In this bonding non-bonding detection, a bonding non-bonding such as a wire breakage is detected by detecting a direct current in a state where the pad as the first bonding point and the lead as the second bonding point are connected. Therefore, when normal bonding is performed at the first bonding point or the second bonding point, a DC closed circuit is formed between the pad of the semiconductor chip 22 and the base 22a via the wire 21 from the clamper 24. . Then, by detecting a direct current with a current detector (not shown), it is determined that the bonding is normally performed at the first bonding point or the second bonding point, and when the direct current does not flow, the wire is detected. It is determined that it is a break.

【００１０】[0010]

【発明が解決しようとする課題】ところで、前記した従
来のボンディング不着検出では、ボンディングが成され
る半導体デバイスとして、例えばバイポーラタイプのも
のについては、前記のように直流電流が流れるか否かに
よりワイヤ切れ等の検出を行うことができるが、半導体
デバイスとして、例えばＳ−ＲＡＭに代表されるような
ＭＯＳ（Metal-Oxide Semiconductor ）集積回路等の半
導体部品においては、直流の流通経路が形成されず、従
来のような直流による検出方法においては不着検出を行
うことができないという問題点を有している。By the way, in the above-described conventional bonding non-adhesion detection, as a semiconductor device to be bonded, for example, of a bipolar type, a wire is determined depending on whether or not a direct current flows as described above. Although the disconnection can be detected, in a semiconductor device such as a MOS (Metal-Oxide Semiconductor) integrated circuit represented by S-RAM, a direct current flow path is not formed. The conventional direct current detection method has a problem that non-stick detection cannot be performed.

【００１１】本発明は前記した従来のものの問題点に鑑
みて成されたものであり、ＭＯＳ集積回路等のような容
量成分を有する半導体デバイスに対するものであっても
不着検出が可能な不着検出方法及び装置を提供すること
を目的とするものである。The present invention has been made in view of the above problems of the prior art, and is a non-stick detection method capable of non-stick detection even for a semiconductor device having a capacitive component such as a MOS integrated circuit. And to provide a device.

【００１２】[0012]

【課題を解決するための手段】本発明に係るワイヤボン
ディング装置におけるボンディング不着検出方法は、ボ
ンディングツールによって被ボンディング部品にワイヤ
をボンディングするボンディング装置において、ボンデ
ィングが成された半導体チップのパッドとベース間に前
記ワイヤを介して矩形波を印加させると共に、前記ワイ
ヤを介して半導体チップに流入する電流の微分出力を積
分して得られる出力レベルを判定することによって、ボ
ンディングの不着検出を行うようにしたものである。ま
た、本発明に係るワイヤボンディング装置におけるボン
ディング不着検出装置は、ボンディングツールによって
ボンディングが成された半導体チップのパッドとベース
間にワイヤを介して矩形波を印加させるための矩形波発
生手段と、前記矩形波発生手段からの矩形波電圧に基づ
く電流の微分出力を検出する微分出力検出手段と、この
微分出力検出手段による微分出力を積分する積分出力手
段と、この積分出力手段によって得られる出力のレベル
を弁別するレベル判定手段とを備え、前記レベル判定手
段による弁別出力により、ボンディングの不着状態を検
出するように構成したものである。A method for detecting non-bonding in a wire bonding apparatus according to the present invention is a bonding apparatus for bonding a wire to a component to be bonded by a bonding tool. A non-bonding detection is performed by applying a rectangular wave through the wire and determining the output level obtained by integrating the differential output of the current flowing into the semiconductor chip through the wire. It is a thing. Further, the non-bonding detection device in the wire bonding device according to the present invention comprises a rectangular wave generating means for applying a rectangular wave between the pad and the base of the semiconductor chip bonded by the bonding tool via the wire, Differential output detecting means for detecting the differential output of the current based on the rectangular wave voltage from the rectangular wave generating means, integral output means for integrating the differential output by the differential output detecting means, and the level of the output obtained by the integral output means And a level determination means for discriminating the bonding non-bonding state by the discrimination output by the level determination means.

【００１３】[0013]

【作用】前記したボンディング不着検出方法及びその装
置においては、ボンディング用ワイヤを介して半導体チ
ップのパッドに対して矩形波信号を送り、この矩形波信
号に基づく微分電流を検出するように成される。そし
て、この微分電流による信号を積分してレベルを弁別す
ることにより、ボンディングの状態を検証するものであ
り、従って半導体チップが例えば容量性の素子であるＭ
ＯＳ集積回路であっても、ボンディングの不着状態を確
実に検出することができる。In the above-described bonding non-attachment detecting method and apparatus, a rectangular wave signal is sent to the pad of the semiconductor chip via the bonding wire, and the differential current based on this rectangular wave signal is detected. . Then, the state of bonding is verified by integrating the signal by the differential current and discriminating the level. Therefore, the semiconductor chip is, for example, a capacitive element M.
Even the OS integrated circuit can reliably detect the non-bonding state of bonding.

【００１４】[0014]

【実施例】以下、本発明の実施例について図面を参照し
つつ説明する。図１は本発明のボンディング不着検出装
置の実施例を示したものである。この図１における端子
Ａはクランパ２４に接続され、端子Ｂは半導体チップ２
２のベース２２ａに接続されるものである。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an embodiment of a non-bonding detection device of the present invention. In FIG. 1, the terminal A is connected to the clamper 24, and the terminal B is the semiconductor chip 2
It is connected to the second base 22a.

【００１５】図１において、タイマー回路５は、矩形波
発生手段としての矩形波発生回路１で発生させる矩形波
を一定時間発生させるようにするものであり、この矩形
波発生回路１は数ボルトの不着検出用電源を備えてい
る。この矩形波発生回路１の出力端は、定電流発生手段
としての定電流器２に接続されている。この定電流器２
は電気的にハイインピーダンスを有し、従って矩形波発
生回路１からの矩形波信号に基づいて閉回路に流れる電
流を、所定以下の微弱電流の値に保持させる。また定電
流器２の出力端は、微分出力検出手段としてのカレント
トランス３の一端に接続されており、カレントトランス
３の他端は、前記した端子Ａに接続されている。前記カ
レントトランス３は、電流路をＯ型の磁気コア３ａによ
って囲み、磁気コア３ａに対して誘導コイル３ｂを巻回
した電流・電圧変換器としての作用をする。In FIG. 1, a timer circuit 5 is for generating a rectangular wave generated by a rectangular wave generating circuit 1 as a rectangular wave generating means for a certain period of time. The rectangular wave generating circuit 1 has a voltage of several volts. Equipped with a non-arrival detection power supply. The output terminal of the rectangular wave generating circuit 1 is connected to a constant current generator 2 as constant current generating means. This constant current device 2
Has an electrically high impedance, and therefore holds the current flowing in the closed circuit based on the rectangular wave signal from the rectangular wave generation circuit 1 at a weak current value below a predetermined value. Further, the output end of the constant current device 2 is connected to one end of a current transformer 3 as a differential output detecting means, and the other end of the current transformer 3 is connected to the above-mentioned terminal A. The current transformer 3 acts as a current / voltage converter in which a current path is surrounded by an O-type magnetic core 3a and an induction coil 3b is wound around the magnetic core 3a.

【００１６】なお、端子Ｂと前記矩形波発生回路１との
間には、閉回路の帰路を構成するリード線が接続されて
いる。A lead wire forming a closed circuit return path is connected between the terminal B and the rectangular wave generating circuit 1.

【００１７】また前記カレントトランス３におけるコイ
ル３ｂの出力は積分出力手段としての積分器４に供給さ
れるように成されており、この積分器４は、カレントト
ランス３からの微分出力信号を片側のみ積分する。この
片側のみ積分された出力信号はレベル判定手段としての
レベル判定器６に印加され、このレベル判定器６におい
てレベルが弁別される。The output of the coil 3b of the current transformer 3 is supplied to an integrator 4 serving as an integral output means. The integrator 4 outputs the differential output signal from the current transformer 3 only on one side. Integrate. The output signal integrated on only one side is applied to the level determiner 6 as the level determiner, and the level determiner 6 discriminates the level.

【００１８】ここで、前記端子Ａは、図４に示すクラン
パ２４及びボンディング用ワイヤ２１を介して第１ボン
ディンク点となる半導体チップ２２におけるパッドに接
続されており、また端子Ｂは半導体チップ２２における
ベース２２ａに接続されている。この端子Ｂは、ベース
２２ａの他ボンディングステージ等に接続されている場
合を含む。そして前記半導体チップ２２がＭＯＳタイプ
であった場合には、半導体チップ２２は等価的にコンデ
ンサＣとしての作用を呈することとなり、図１における
端子Ａ及びＢの間には、等価的にコンデンサＣが接続さ
れたことになる。Here, the terminal A is connected to a pad on the semiconductor chip 22 which is the first bond point via the clamper 24 and the bonding wire 21 shown in FIG. 4, and the terminal B is on the semiconductor chip 22. It is connected to the base 22a. This terminal B includes a case where it is connected to a bonding stage or the like other than the base 22a. If the semiconductor chip 22 is of the MOS type, the semiconductor chip 22 equivalently acts as the capacitor C, and the capacitor C is equivalently provided between the terminals A and B in FIG. You are connected.

【００１９】図２はボンディングが成される半導体チッ
プがＭＯＳタイプのものである場合における前記図１に
示す各部の信号波形を示している。以下図２に示す信号
波形の説明と共に、図１に示した回路の作用を説明す
る。FIG. 2 shows the signal waveform of each part shown in FIG. 1 when the semiconductor chip to be bonded is of the MOS type. The operation of the circuit shown in FIG. 1 will be described together with the description of the signal waveforms shown in FIG.

【００２０】図２（ａ）は前記矩形波発生回路１からも
たらされる対称的な矩形波であり、この矩形波（ａ）は
定電流器２に供給されて、矩形波（ａ）に基づく回路の
電流が所定の値以下となるように制限される。ここで、
端子Ａ及びＢには、正常なボンディングが成された場合
には、前記したように等価的にコンデンサＣが接続され
た形に成されるため、端子Ａ，Ｂ間は矩形波によりチャ
ージ及びディスチャージが繰り返され、結果としてカレ
ントトランス３におけるコイル３ｂの出力は、図２
（ｂ）として示すような正負から成る微分波形となる。FIG. 2A shows a symmetrical rectangular wave generated from the rectangular wave generating circuit 1. The rectangular wave (a) is supplied to the constant current unit 2 and is based on the rectangular wave (a). Current is limited to a predetermined value or less. here,
When the normal bonding is performed on the terminals A and B, the capacitor C is equivalently connected as described above, so that the terminals A and B are charged and discharged by a rectangular wave. Is repeated, and as a result, the output of the coil 3b in the current transformer 3 is as shown in FIG.
The differential waveform has positive and negative values as shown in (b).

【００２１】このカレントトランス３からの前記微分波
形（ｂ）は片側のみ積分されて図２（ｃ）に示すような
波形となる。この出力（ｃ）はレベル判定器６において
弁別され、図２（ｃ）に示すような十分なレベルの出力
が存在する場合には、第１ボンディング点は正常なボン
ディングが成された状態であると判定される。The differential waveform (b) from the current transformer 3 is integrated on only one side to form a waveform as shown in FIG. 2 (c). This output (c) is discriminated by the level determiner 6, and when there is an output of a sufficient level as shown in FIG. 2 (c), the first bonding point is in a state where normal bonding is performed. Is determined.

【００２２】また第１ボンディング点が不着状態となっ
た場合には、図１における端子Ａ及びＢ間には、等価的
なコンデンサＣは接続されず、解放状態となる。従って
カレントトランス３からは微分波形は現れず、前記レベ
ル判定器６に対しての出力も発生しないため、レベル判
定器６においては、第１ボンディング点は不着状態であ
ると判定される。When the first bonding point is in a non-attached state, the equivalent capacitor C is not connected between the terminals A and B in FIG. 1 and is in a released state. Therefore, since the differential waveform does not appear from the current transformer 3 and the output to the level determiner 6 does not occur, the level determiner 6 determines that the first bonding point is in the non-attached state.

【００２３】なお、本発明に係るボンディング不着検出
装置は、ボンディング装置に組み込まれて一体に構成さ
れてもよいことは勿論である。It is needless to say that the non-bonding detection device according to the present invention may be incorporated in the bonding device and integrally formed.

【００２４】[0024]

【発明の効果】以上の説明で明らかなように、本発明に
係るワイヤボンディング装置におけるボンディング不着
検出方法及び不着検出装置によると、ボンディング用ワ
イヤを介して半導体チップの電極に対して一定時間・矩
形波信号を送り、この矩形波信号に基づく微分電流を検
出するように成される。そして、この微分電流による信
号を積分してレベルを弁別することにより、ボンディン
グの状態を判別するようにしており、従って半導体チッ
プが例えば容量性の素子である例えばＭＯＳ集積回路で
あっても、ボンディングの不着状態を確実に検出するこ
とができる。As is apparent from the above description, according to the bonding non-bonding detecting method and the non-bonding detecting device in the wire bonding apparatus of the present invention, the electrodes of the semiconductor chip are connected to the electrodes of the semiconductor chip through the bonding wire for a certain period of time / rectangle. A wave signal is sent and a differential current based on this square wave signal is detected. Then, the signal due to the differential current is integrated to discriminate the level to discriminate the bonding state. Therefore, even if the semiconductor chip is a capacitive element, for example, a MOS integrated circuit, bonding is performed. The non-attachment state can be reliably detected.

【図面の簡単な説明】[Brief description of drawings]

【図１】図１は、本発明に係るボンディング不着検出装
置の一実施例を示したブロック図である。FIG. 1 is a block diagram showing an embodiment of a bonding non-sticking detection device according to the present invention.

【図２】図２は、図１における各部の信号波形を示した
波形図である。FIG. 2 is a waveform diagram showing signal waveforms of respective parts in FIG.

【図３】図３は、ボンディングの工程を示した工程図で
ある。FIG. 3 is a process diagram showing a bonding process.

【図４】図４は、従来のボンディング不着検出装置の一
例を示した構成図である。FIG. 4 is a configuration diagram showing an example of a conventional bonding non-sticking detection device.

【符号の説明】[Explanation of symbols]

１ 矩形波発生回路（矩形波発生手段） ２ 定電流器（定電流発生手段） ３ カレントトランス（微分出力検出手段） ４ 積分器（積分出力手段） ５ タイマー回路 ６ レベル判定器（レベル判定手段） ２０ キャピラリ（ボンディングツール） ２１ ワイヤ ２２ 半導体チップ ２３ リード ２４ クランパ 1 rectangular wave generation circuit (rectangular wave generation means) 2 constant current device (constant current generation means) 3 current transformer (differential output detection means) 4 integrator (integration output means) 5 timer circuit 6 level determination device (level determination means) 20 Capillary (bonding tool) 21 Wire 22 Semiconductor chip 23 Lead 24 Clamper

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 ボンディングツールによって被ボンディ
ング部品にワイヤをボンディングするボンディング装置
において、ボンディングが成された半導体チップのパッ
ドとベース間に前記ワイヤを介して矩形波を印加させる
と共に、前記ワイヤを介して半導体チップに流入する電
流の微分出力を積分して得られる出力レベルを判定する
ことによって、ボンディングの不着検出を行うようにし
たことを特徴とするワイヤボンディング装置におけるボ
ンディング不着検出方法。1. A bonding apparatus for bonding a wire to a component to be bonded by a bonding tool, wherein a rectangular wave is applied between the pad and the base of a bonded semiconductor chip via the wire and the wire is also applied via the wire. A bonding non-bonding detection method in a wire bonding apparatus, characterized in that a bonding non-bonding is detected by determining an output level obtained by integrating a differential output of a current flowing into a semiconductor chip. 【請求項２】 ボンディングツールによってボンディン
グが成された半導体チップのパッドとベース間にワイヤ
を介して矩形波を印加させるための矩形波発生手段と、
前記矩形波発生手段からの矩形波電圧に基づく電流の微
分出力を検出する微分出力検出手段と、この微分出力検
出手段による微分出力を積分する積分出力手段と、この
積分出力手段によって得られる出力のレベルを弁別する
レベル判定手段とを備え、前記レベル判定手段による弁
別出力により、ボンディングの不着状態を検出するよう
にしたことを特徴とするワイヤボンディング装置におけ
るボンディング不着検出装置。 【０００１】2. A rectangular wave generating means for applying a rectangular wave between a pad and a base of a semiconductor chip bonded by a bonding tool via a wire,
A differential output detecting means for detecting a differential output of a current based on the rectangular wave voltage from the rectangular wave generating means, an integral output means for integrating the differential output by the differential output detecting means, and an output obtained by the integral output means. A bonding non-adhesion detecting device in a wire bonding apparatus, comprising: a level judging means for discriminating levels, and a non-bonding state of bonding is detected by a discrimination output by the level judging means. [0001]
JP06489795A 1995-02-28 1995-02-28 Bonding non-bonding detection method and bonding non-bonding detection device in wire bonding apparatus Expired - Lifetime JP3335031B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06489795A JP3335031B2 (en) 1995-02-28 1995-02-28 Bonding non-bonding detection method and bonding non-bonding detection device in wire bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06489795A JP3335031B2 (en) 1995-02-28 1995-02-28 Bonding non-bonding detection method and bonding non-bonding detection device in wire bonding apparatus

Publications (2)

Publication Number Publication Date
JPH08236587A true JPH08236587A (en) 1996-09-13
JP3335031B2 JP3335031B2 (en) 2002-10-15

Family

ID=13271336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06489795A Expired - Lifetime JP3335031B2 (en) 1995-02-28 1995-02-28 Bonding non-bonding detection method and bonding non-bonding detection device in wire bonding apparatus

Country Status (1)

Country Link
JP (1) JP3335031B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007088587A1 (en) * 2006-01-31 2007-08-09 Topcon Corporation Semiconductor measuring apparatus and semiconductor measuring method
JP2009021493A (en) * 2007-07-13 2009-01-29 Kaijo Corp Wire bonding apparatus
KR20220018470A (en) 2020-08-04 2022-02-15 야마하 로보틱스 홀딩스 가부시키가이샤 Wire bonding state determination method and wire bonding state determination apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007088587A1 (en) * 2006-01-31 2007-08-09 Topcon Corporation Semiconductor measuring apparatus and semiconductor measuring method
JP2009021493A (en) * 2007-07-13 2009-01-29 Kaijo Corp Wire bonding apparatus
KR20220018470A (en) 2020-08-04 2022-02-15 야마하 로보틱스 홀딩스 가부시키가이샤 Wire bonding state determination method and wire bonding state determination apparatus

Also Published As

Publication number Publication date
JP3335031B2 (en) 2002-10-15

Similar Documents

Publication Publication Date Title
TWI337385B (en)
TWI298915B (en) Wire bonding apparatus
US4459452A (en) Ball bonding of wire
JP3335031B2 (en) Bonding non-bonding detection method and bonding non-bonding detection device in wire bonding apparatus
JP3335043B2 (en) Semiconductor device state determination method and state determination apparatus
JPH0964116A (en) Method and apparatus for detecting defective bonding in wire bonding device
JP2996847B2 (en) Wire bonding apparatus and bonding state inspection method using the same
JP2000306940A (en) Method and device for inspecting nonadhesion in bump bonding
JP3537083B2 (en) Wire bonding equipment
JP3253049B2 (en) Ball diameter detecting method and ball diameter detecting device in wire bonding apparatus
JPH11176868A (en) Wire bonding device
JPH11243119A (en) Method and device for wire bonding
JPS5917977B2 (en) Ball forming method in wire bonder
JP3531378B2 (en) Wire bonding equipment
JPS6123652B2 (en)
JPS6149433A (en) Improper ball formation detecting method of wire bonding
JP2807947B2 (en) Ball forming apparatus and method for wire bonder
JP2568140B2 (en) Wire bonding apparatus and method
JPH1041335A (en) Peeling device for coated wire for wire bonding
JPH0317376B2 (en)
JP2009021493A (en) Wire bonding apparatus
JP2904618B2 (en) Ball forming device for wire bonder
JPH09326409A (en) Judging method for wire bonding condition
JPH0770556B2 (en) High voltage generator
JPH0158868B2 (en)

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080802

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090802

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100802

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100802

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110802

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110802

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120802

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120802

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130802

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140802

Year of fee payment: 12

EXPY Cancellation because of completion of term