JP2000306940A - Method and device for inspecting nonadhesion in bump bonding - Google Patents
Method and device for inspecting nonadhesion in bump bondingInfo
- Publication number
- JP2000306940A JP2000306940A JP11113793A JP11379399A JP2000306940A JP 2000306940 A JP2000306940 A JP 2000306940A JP 11113793 A JP11113793 A JP 11113793A JP 11379399 A JP11379399 A JP 11379399A JP 2000306940 A JP2000306940 A JP 2000306940A
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- JP
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- Prior art keywords
- ball
- signal
- wire
- semiconductor chip
- circuit
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/484—Connecting portions
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、キャピラリに挿通
されたワイヤの先端にボールを形成し、このボールをバ
ンプとして半導体チップ上にボンディングするバンプボ
ンディングにおける不着検査方法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-bonding inspection method and apparatus for bump bonding in which a ball is formed at the tip of a wire inserted into a capillary, and the ball is used as a bump for bonding to a semiconductor chip.
【０００２】[0002]
【従来の技術】バンプボンディング方法は、一般に図４
に示す工程によって行われる。まず、クランパ１が閉じ
た状態で、キャピラリ２に挿通されたワイヤ３の先端に
放電電極４からの放電によってボール３ａを形成する。
続いて図４（ａ）に示すようにクランパ１が開くと、ワ
イヤ３が図示しないバックテンション機構によって適度
な力で上方へ引き戻される。次に図４（ｂ）に示すよう
に、キャピラリ２が下降してボール３ａを半導体チップ
５のパッド電極６表面に押し付ける。その後はキャピラ
リ２を保持した超音波ホーン（図示せず）により超音波
を印加しながらキャピラリ２でボール３ａを加圧し、変
形させてパッド電極６に接続する。2. Description of the Related Art In general, a bump bonding method is shown in FIG.
This is performed by the steps shown in FIG. First, with the clamper 1 closed, a ball 3 a is formed at the tip of the wire 3 inserted through the capillary 2 by discharging from the discharge electrode 4.
Subsequently, as shown in FIG. 4A, when the clamper 1 is opened, the wire 3 is pulled upward by an appropriate force by a back tension mechanism (not shown). Next, as shown in FIG. 4B, the capillary 2 descends and presses the ball 3a against the surface of the pad electrode 6 of the semiconductor chip 5. Thereafter, the ball 3 a is pressed by the capillary 2 while applying ultrasonic waves by an ultrasonic horn (not shown) holding the capillary 2, deformed and connected to the pad electrode 6.
【０００３】次に図４（ｃ）に示すように、キャピラリ
２及びクランパ１が共に上昇し、次のボール３ａを形成
するためのワイヤ３（テール）を繰り出しながらクラン
パ１が閉じる。更にキャピラリ２及びクランパ１が共に
上昇し、図４（ｄ）に示すように、ワイヤ３がボール３
ａの付け根から切断される。これにより、バンプ７が形
成される。なお、この種のバンプボンディング方法とし
て、例えば特開昭５４−２６６２号公報、特公平４−４
１５１９号公報、特開平７−８６２８６号公報等に示す
ものが挙げられる。Next, as shown in FIG. 4 (c), both the capillary 2 and the clamper 1 rise, and the clamper 1 closes while paying out a wire 3 (tail) for forming the next ball 3a. Further, both the capillary 2 and the clamper 1 rise, and as shown in FIG.
It is cut from the base of a. Thereby, the bump 7 is formed. Incidentally, as this kind of bump bonding method, for example, Japanese Patent Application Laid-Open No. Sho 54-2662,
Nos. 1519 and 7-86286.
【０００４】バンプボンディングにおけるバンプ７の不
着（ボール３ａとパッド電極６間の不着）として、図５
（ａ）（ｂ）に示す現象がある。図５（ａ）は前記した
図４（ｃ）の工程における不着、図５（ｂ）は図４
（ｄ）の工程における不着を示す。即ち、図４（ｃ）に
示すようにキャピラリ２が上昇する時、図５（ａ）に示
すようにボール３ａが剥がれてしまった状態（ボール３
ａがパッド電極６に接続されない状態）、また図４
（ｄ）のようにワイヤ３を切断する時、図５（ｂ）のよ
うにボール３ａが剥がれてしまった状態がある。[0005] Non-adhesion of the bump 7 (non-adhesion between the ball 3a and the pad electrode 6) in the bump bonding is shown in FIG.
There are the phenomena shown in (a) and (b). FIG. 5A shows the non-deposition in the step of FIG. 4C, and FIG.
The non-deposition in the step (d) is shown. That is, when the capillary 2 ascends as shown in FIG. 4C, the ball 3a is peeled off as shown in FIG.
a is not connected to the pad electrode 6), and FIG.
When the wire 3 is cut as shown in (d), the ball 3a may be peeled off as shown in FIG. 5 (b).
【０００５】バンプボンディングの場合には、ワイヤ３
の材質として半田等のように金線より軟らかいものも用
いられる。ワイヤ３の半田材質と半導体チップ５のパッ
ド電極６表面の材質とが馴染み難い（接合性が悪い）
と、図５（ｂ）の現象より図５（ａ）の現象が起こり易
い。図５（ａ）（ｂ）のような不着は、図４（ｄ）のよ
うにテール３ｂが形成されないので、例えば特公昭５４
−３５０６５号公報に示す方法により、図４（ａ）に示
すボール３ａの形成時に検出することができる。しか
し、バンプボンディングにおいては、前記したように図
５（ｂ）の現象より図５（ａ）の現象が起こり易い。こ
の図５（ａ）の現象は、前記した方法では即座に検出で
きない。従来、バンプボンディングにおけるバンプの不
着を検出する方法及び装置は存在しない。In the case of bump bonding, wire 3
A material softer than a gold wire, such as a solder, is used as the material of the metal. The solder material of the wire 3 is hardly compatible with the material of the surface of the pad electrode 6 of the semiconductor chip 5 (poor bonding).
5 (a) is more likely to occur than the phenomenon of FIG. 5 (b). 5 (a) and 5 (b), the tail 3b is not formed as shown in FIG. 4 (d).
According to the method disclosed in JP-A-35065, it can be detected when the ball 3a shown in FIG. 4A is formed. However, in the bump bonding, the phenomenon of FIG. 5A is more likely to occur than the phenomenon of FIG. 5B as described above. The phenomenon shown in FIG. 5A cannot be immediately detected by the above-described method. Conventionally, there is no method and apparatus for detecting non-bonding of bumps in bump bonding.
【０００６】ワイヤボンディングにおいては、ワイヤの
不着検出方法として、特公平１−５８８６８号公報、特
許第２６１７３５１号公報等に示すものが知られてい
る。このワイヤボンディングによる不着検出の装置を図
６に示す。図６は、半導体チップ５が銀ペースト等の導
電性接着剤でリードフレーム１０に固着されたワークに
適用した例を示す。半導体チップ５が固着されたリード
フレーム１０は、試料台１１に位置決め固定され、半導
体チップ５のパッド電極６は、半導体チップ５の内部抵
抗Ｒｄ、リードフレーム１０を経てアースに接続され
る。なお、半導体チップ５が絶縁物よりなる基板等に固
着されている場合には、半導体チップ５は予め基板上に
設けられた配線パターンに導通接続され、この配線パタ
ーンを通じてアースに接続される。In wire bonding, as a method for detecting non-attachment of a wire, those disclosed in Japanese Patent Publication No. 1-58868 and Japanese Patent No. 2617351 are known. FIG. 6 shows an apparatus for detecting non-attachment by wire bonding. FIG. 6 shows an example in which the semiconductor chip 5 is applied to a work fixed to the lead frame 10 with a conductive adhesive such as a silver paste. The lead frame 10 to which the semiconductor chip 5 is fixed is positioned and fixed to the sample table 11, and the pad electrode 6 of the semiconductor chip 5 is connected to the ground through the internal resistance Rd of the semiconductor chip 5 and the lead frame 10. When the semiconductor chip 5 is fixed to a substrate or the like made of an insulator, the semiconductor chip 5 is conductively connected to a wiring pattern provided on the substrate in advance, and is connected to the ground through the wiring pattern.
【０００７】半導体チップ５とリードフレーム１０に接
続されるワイヤ３はスプール１２に巻回されており、一
端はキャピラリ２に挿通され、他端は端子１３に接続さ
れている。端子１３はスイッチＳＷ１のコモン接点Ｃに
接続され、スイッチＳＷ１の常時閉接点ＮＣはアースさ
れている。スイッチＳＷ１の常時開接点ＮＯは検出器１
４及び抵抗１５の一端に接続されており、抵抗１５の他
端はスイッチＳＷ２によって２個の電源１６、１７に選
択的に接続される。２個の電源１６、１７を設けたの
は、半導体チップ５のパッド電極６とアース間にダイオ
ード特性があるために、半導体チップ５によって極性
（順送りか逆送りかによる極性）が異なるためであり、
スイッチＳＷ２によって極性を反転させて対応させる。A wire 3 connected to the semiconductor chip 5 and the lead frame 10 is wound around a spool 12, one end of which is inserted into the capillary 2, and the other end of which is connected to a terminal 13. The terminal 13 is connected to the common contact C of the switch SW1, and the normally closed contact NC of the switch SW1 is grounded. The normally open contact NO of the switch SW1 is the detector 1
4 and one end of the resistor 15, and the other end of the resistor 15 is selectively connected to two power supplies 16 and 17 by a switch SW <b> 2. The reason why the two power supplies 16 and 17 are provided is that the semiconductor chip 5 has a different polarity (polarity depending on whether the semiconductor chip 5 is forward or backward) because of the diode characteristics between the pad electrode 6 of the semiconductor chip 5 and the ground. ,
The polarity is reversed by the switch SW2 to correspond.
【０００８】前記スイッチＳＷ１の切り換えのタイミン
グは、図７に示すボンディング状態で行われる。まず、
キャピラリ２の下端より延在したワイヤ３の先端に放電
電極４からの放電によってボール３ａが形成される。次
にキャピラリ２が下降し、ボール３ａは半導体チップ５
のパッド電極６に第１ボンドされる。その後キャピラリ
２は上昇し、リード１０ａの第２ボンド点の上方に移動
し、再び下降する。この間にスイッチＳＷ１は常時開接
点ＮＯに接続される。この場合、ボール３ａがパッド電
極６に接続されていると、前記したようにパッド電極６
は、抵抗Ｒｄ、リードフレーム１０を経てアースされて
いるので、電源１６又は１７よりスイッチＳＷ２、抵抗
１５、スイッチＳＷ１、端子１３を通ってワイヤ３に電
流が流れ、検出器１４には電流が流れない。もし、ボー
ル３ａがパッド電極６に接続されていないと、ワイヤ３
には電流が流れなく、検出器１４に電流が流れ、検出器
１４よりワイヤ接続不良信号が出力される。The switching timing of the switch SW1 is performed in the bonding state shown in FIG. First,
A ball 3 a is formed by the discharge from the discharge electrode 4 at the tip of the wire 3 extending from the lower end of the capillary 2. Next, the capillary 2 descends, and the ball 3a is
Is first bonded to the pad electrode 6 of FIG. Thereafter, the capillary 2 ascends, moves above the second bond point of the lead 10a, and descends again. During this time, the switch SW1 is connected to the normally open contact NO. In this case, when the ball 3a is connected to the pad electrode 6, as described above, the pad electrode 6
Is grounded via the resistor Rd and the lead frame 10, a current flows from the power supply 16 or 17 to the wire 3 through the switch SW2, the resistor 15, the switch SW1, and the terminal 13, and a current flows to the detector 14. Absent. If the ball 3a is not connected to the pad electrode 6, the wire 3a
, No current flows, a current flows to the detector 14, and a wire connection failure signal is output from the detector 14.
【０００９】今、電源１６、１７からスイッチＳＷ２に
よって選択された電圧をＶｒ、半導体チップ５の抵抗を
Ｒｄ（正しくは、パッド電極６からアースまでの間の電
気的抵抗）、抵抗１５をＲｓとする。このＲｓは、Ｒｄ
と組み合わせて半導体チップ５に流入する電流Ｉｄの量
を制限する抵抗（保護抵抗）である。また検出器１４に
入力される電圧をＶｄ、このＶｄの正の電圧及び負の電
圧のしきい値電圧をＶｔとする。不着検出時に流れる電
流Ｉｄ及び検出器１４に入力される電圧Ｖｄは、〔数
１〕及び〔数２〕で表される。Now, the voltage selected by the switch SW2 from the power supplies 16 and 17 is Vr, the resistance of the semiconductor chip 5 is Rd (correctly, the electric resistance from the pad electrode 6 to the ground), and the resistance 15 is Rs. I do. This Rs is Rd
And a resistor (protective resistor) for limiting the amount of current Id flowing into the semiconductor chip 5 in combination with the above. The voltage input to the detector 14 is Vd, and the threshold voltage of the positive voltage and the negative voltage of Vd is Vt. The current Id flowing at the time of non-attachment detection and the voltage Vd input to the detector 14 are represented by [Equation 1] and [Equation 2].
【数１】Ｉｄ＝Ｖｒ／（Ｒｓ＋Ｒｄ）Id = Vr / (Rs + Rd)
【数２】 Ｖｄ＝Ｒｄ×Ｉｄ＝Ｒｄ×Ｖｒ／（Ｒｓ＋Ｒｄ）Vd = Rd × Id = Rd × Vr / (Rs + Rd)
【００１０】〔数２〕より明らかなように、Ｒｄが大き
くなるほどＶｄはＶｒに近づく。不着発生時には、Ｒｄ
＝∞と考えられるので、Ｖｄ≒Ｖｒとなる。図８（ａ）
はＲｄが比較的小さい場合で、図８（ｂ）はＲｄが比較
的大きい場合である。As is apparent from [Equation 2], Vd approaches Vr as Rd increases. When non-delivery occurs, Rd
= ∞, Vd の Vr. FIG. 8 (a)
Fig. 8B shows a case where Rd is relatively small, and Fig. 8B shows a case where Rd is relatively large.
【００１１】[0011]
【発明が解決しようとする課題】従来のワイヤボンディ
ングによる不着検出方法においては、半導体チップ５の
電気的抵抗Ｒｄが大きくなるほど、ＶｒとＶｄ間の電位
差が狭くなり、しきい値電圧Ｖｔの設定が困難となる。
即ち、不着検出が困難となる。In the conventional method for detecting non-attachment by wire bonding, as the electrical resistance Rd of the semiconductor chip 5 increases, the potential difference between Vr and Vd decreases, and the threshold voltage Vt is set. It will be difficult.
That is, it is difficult to detect non-attachment.
【００１２】またワイヤボンディングにおいては、パッ
ド電極６への不着検出は、図７に示すようにワイヤ３を
リード１０ａに接続するまでの間に行えばよいので、ワ
イヤ３を繰り出す時間（ルーピング時間）だけ時間的に
余裕がある。しかし、図４に示すバンプボンディングに
おいては、ボール３ａをパッド電極６に接続後、すぐに
ボール３ａの付け根からワイヤ３を切断するので、即ち
ルーピング時間がないので、図４（ｂ）から図４（ｃ）
間の僅かにキャピラリ２が移動する距離（５０〜１００
μｍ）の間に不着検出を行わなければならなく、時間的
に余裕がない。In the wire bonding, the non-attachment to the pad electrode 6 may be detected until the wire 3 is connected to the lead 10a as shown in FIG. 7, so that the time for feeding out the wire 3 (looping time). I just have time. However, in the bump bonding shown in FIG. 4, the wire 3 is cut from the base of the ball 3a immediately after the ball 3a is connected to the pad electrode 6, that is, there is no looping time. (C)
The distance that the capillary 2 moves slightly (50-100
μm), non-delivery detection must be performed, and there is no time margin.
【００１３】一方、図６に示す検出器１４の入力に接続
された回路には浮遊容量成分Ｃｄ（図１参照）が存在す
るため、不着が生じた場合でも検出電流Ｉｄが流れてし
まう。この時の検出電流Ｉｄの電流量は、浮遊容量成分
Ｃｄに電荷をチャージする間電流が一定時間流れ続けな
がら徐々に０になっていく。従来は、その後でなければ
不着検出の判定ができなかった。従って、バンプボンデ
ィングの場合には、ワイヤボンディングのようなワイヤ
繰り出し時間が存在しない分、時間的制限が厳しい。On the other hand, since the stray capacitance component Cd (see FIG. 1) exists in the circuit connected to the input of the detector 14 shown in FIG. 6, the detection current Id flows even when the non-attachment occurs. At this time, the current amount of the detection current Id gradually becomes zero while the current continues to flow for a certain period of time while charging the stray capacitance component Cd. Conventionally, non-delivery detection cannot be determined unless it is after that. Therefore, in the case of bump bonding, the time limit is severe because there is no wire feeding time unlike wire bonding.
【００１４】本発明の課題は、バンプボンディングにお
けるボール不着を短時間に検出できる不着検査方法及び
装置を提供することにある。An object of the present invention is to provide a non-sticking inspection method and apparatus which can detect non-sticking of a ball in bump bonding in a short time.
【００１５】[0015]
【課題を解決するための手段】上記課題を解決するため
の本発明の方法は、ワイヤの先端に形成されたボールを
半導体チップに接続した後、ワイヤをボールの付け根か
ら切断して半導体チップにバンプを形成するバンプボン
ディング方法において、ボールを半導体チップに接続し
た後、ワイヤをボールの付け根から切断するまでの期間
に、ワイヤに電圧を印加し、ボール不着の有無による前
記期間中の電圧の変化を検出することによりボール不着
の有無を判定することを特徴とする。According to a method of the present invention for solving the above problems, a ball formed at the tip of a wire is connected to a semiconductor chip, and then the wire is cut from the base of the ball to form a semiconductor chip. In the bump bonding method for forming a bump, a voltage is applied to the wire during a period from when the ball is connected to the semiconductor chip until the wire is cut from the base of the ball, and a change in the voltage during the period depending on whether or not the ball is not attached. Is detected to determine the presence / absence of ball non-adherence.
【００１６】上記課題を解決するための本発明の第１の
装置は、ワイヤの先端に形成されたボールを半導体チッ
プに接続した後、ワイヤをボールの付け根から切断して
半導体チップにバンプを形成するバンプボンディング装
置において、ボールを半導体チップに接続した後、ワイ
ヤをボールの付け根から切断するまでの期間に、ワイヤ
に電圧を印加する電源と、ボール不着の有無による前記
期間中の電圧の変化を検出することによりボール不着の
有無を判定するコンピュータを備えたことを特徴とす
る。According to a first apparatus of the present invention for solving the above problems, after connecting a ball formed at the tip of a wire to a semiconductor chip, the wire is cut from the base of the ball to form a bump on the semiconductor chip. In the bump bonding apparatus, after the ball is connected to the semiconductor chip, a power supply for applying a voltage to the wire and a change in the voltage during the period due to the presence or absence of the ball during a period until the wire is cut from the base of the ball are determined. It is characterized by comprising a computer that determines the presence / absence of ball non-adherence by detecting.
【００１７】上記課題を解決するための本発明の第２の
装置は、上記第１の装置において、前記コンピュータ
は、前記期間中の電位の変化を抽出して変位信号として
取り出し示す変位抽出回路と、前記変位信号と基準信号
とを比較し、変位信号の絶対値が基準信号の示すしきい
値電圧の絶対値より大きい場合にセット信号を出力する
比較回路と、前記基準信号を前記比較回路に入力すると
共に、前記セット信号により異常検出信号を出力する制
御回路を備えたことを特徴とする。According to a second device of the present invention for solving the above-mentioned problems, in the above-mentioned first device, the computer extracts a change in potential during the period and extracts it as a displacement signal. A comparison circuit that compares the displacement signal with a reference signal, and outputs a set signal when the absolute value of the displacement signal is greater than the absolute value of the threshold voltage indicated by the reference signal; and outputs the reference signal to the comparison circuit. A control circuit for inputting and outputting an abnormality detection signal based on the set signal is provided.
【００１８】[0018]
【発明の実施の形態】本発明の一実施の形態を図１乃至
図５により説明する。なお、図６と同じ又は相当部材に
は同一符号を付して説明する。図１は、半導体チップ５
が例えば銀ペースト等の導電性接着剤でリードフレーム
１０に固着されたワークに適用した例を示す。半導体チ
ップ５が固着されたリードフレーム１０は、試料台１１
に位置決め固定され、半導体チップ５のパッド電極６
は、半導体チップ５の内部抵抗Ｒｄ、リードフレーム１
０を経てアースに接続される。なお、半導体チップ５が
絶縁物よりなる基板等に固着されている場合には、半導
体チップ５は予め基板上に設けられた配線パターンに導
通接続され、この配線パターンを通じてアースに接続さ
れる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIGS. Note that the same or equivalent members as those in FIG. FIG. 1 shows a semiconductor chip 5
Is applied to a work fixed to the lead frame 10 with a conductive adhesive such as a silver paste. The lead frame 10 to which the semiconductor chip 5 is fixed is mounted on the sample stage 11.
And the pad electrode 6 of the semiconductor chip 5
Are the internal resistance Rd of the semiconductor chip 5, the lead frame 1
0 is connected to ground. When the semiconductor chip 5 is fixed to a substrate or the like made of an insulator, the semiconductor chip 5 is conductively connected to a wiring pattern provided on the substrate in advance, and is connected to the ground through the wiring pattern.
【００１９】半導体チップ５にバンプを形成するための
ワイヤ３はスプール１２に巻回されており、一端はキャ
ピラリ２に挿通され、他端は端子１３に接続されてい
る。端子１３はスイッチＳＷ１のコモン接点Ｃに接続さ
れ、スイッチＳＷ１の常時閉接点ＮＣはアースされてい
る。スイッチＳＷ１の常時開接点ＮＯは抵抗１５の一端
に接続されており、抵抗１５の他端はスイッチＳＷ２に
よって２個の電源１６、１７に選択的に接続される。２
個の電源１６、１７を設けたのは、半導体チップ５のパ
ッド電極６とアース間にダイオード特性があるために、
半導体チップ５によって極性（順送りか逆送りかによる
極性）が異なるためであり、スイッチＳＷ２によって極
性を反転させて対応させる。以上は、図６に示す従来例
とほぼ同じ構成である。なお、図１において、Ｃｄはコ
ンピュータ２０の入力端子２１に接続された回路の浮遊
容量成分を示す。A wire 3 for forming a bump on the semiconductor chip 5 is wound around a spool 12, one end of which is inserted into the capillary 2, and the other end of which is connected to a terminal 13. The terminal 13 is connected to the common contact C of the switch SW1, and the normally closed contact NC of the switch SW1 is grounded. The normally open contact NO of the switch SW1 is connected to one end of a resistor 15, and the other end of the resistor 15 is selectively connected to two power supplies 16 and 17 by a switch SW2. 2
The power supplies 16 and 17 are provided because there is a diode characteristic between the pad electrode 6 of the semiconductor chip 5 and the ground.
This is because the polarity (polarity depending on whether forward or backward) differs depending on the semiconductor chip 5, and the polarity is reversed by the switch SW2 to correspond. The above is almost the same configuration as the conventional example shown in FIG. In FIG. 1, Cd represents a stray capacitance component of a circuit connected to the input terminal 21 of the computer 20.
【００２０】前記スイッチＳＷ１の常時開接点ＮＯは、
コンピュータ２０の入力端子２１に接続されている。ま
たスイッチＳＷ１、ＳＷ２には、図３に示すタイミング
でコンピュータ２０より切り換え信号ＳＷ１ＳＥＬ、Ｓ
Ｗ２ＳＥＬが出力される。The normally open contact NO of the switch SW1 is:
It is connected to the input terminal 21 of the computer 20. The switches SW1 and SW2 are supplied to the switches SW1 and SW2 at the timing shown in FIG.
W2SEL is output.
【００２１】コンピュータ２０は図２に示すような構成
となっている。入力端子２１に入力される信号には、配
線経路やワイヤ３からのノイズ成分が含まれているの
で、ノイズ除去回路２２を通して平滑化してノイズ成分
を除去し、次の変位抽出回路２３を通して過渡的な電圧
の変化を抽出して変位信号＋Ｖ０又は−Ｖ０として取り
出し、この変位信号＋Ｖ０又は−Ｖ０は比較回路２４に
入力される。The computer 20 has a configuration as shown in FIG. Since the signal input to the input terminal 21 includes a noise component from the wiring path or the wire 3, the signal is smoothed through the noise removal circuit 22 to remove the noise component, and the signal is transiently transferred through the next displacement extraction circuit 23. The change of the voltage is extracted and taken out as a displacement signal + V0 or -V0. The displacement signal + V0 or -V0 is input to the comparison circuit 24.
【００２２】制御回路２５には、予め不着を判定するた
めの電圧レベルを示す正負のしきい値が教示されてお
り、この正負のしきい値は、基準信号発生回路２６に入
力される。基準信号発生回路２６は、正負のしきい値を
基に正の基準信号＋Ｖｔｈと負の基準信号−Ｖｔｈを生
成し、この基準信号＋Ｖｔｈ、−Ｖｔｈは比較回路２４
に入力される。比較回路２４は、前記変位信号＋Ｖ０又
は−Ｖ０と基準信号＋Ｖｔｈ又は−Ｖｔｈとを比較し、
変位信号＋Ｖ０が基準信号＋Ｖｔｈの示すしきい値電圧
＋Ｖｔｈより大きい場合、又は変位信号−Ｖ０が基準信
号−Ｖｔｈの示すしきい値電圧−Ｖｔｈより小さい場
合、比較回路２４はセット信号Ｓを出力する。このセッ
ト信号Ｓが自己保持回路２７に入力されると、自己保持
回路２７は不着判別信号Ｑをオン状態に保持し、この不
着判別信号Ｑが制御回路２５に入力される。制御回路２
５に不着判別信号Ｑが入力されると、異常検出信号Ｕが
ボンディング装置に出力される。The control circuit 25 is instructed in advance with positive and negative threshold values indicating voltage levels for determining non-attachment, and the positive and negative threshold values are input to a reference signal generation circuit 26. The reference signal generating circuit 26 generates a positive reference signal + Vth and a negative reference signal -Vth based on the positive and negative thresholds, and the reference signals + Vth and -Vth
Is input to The comparison circuit 24 compares the displacement signal + V0 or -V0 with the reference signal + Vth or -Vth,
When the displacement signal + V0 is larger than the threshold voltage + Vth indicated by the reference signal + Vth, or when the displacement signal -V0 is smaller than the threshold voltage -Vth indicated by the reference signal -Vth, the comparison circuit 24 outputs the set signal S. . When the set signal S is input to the self-holding circuit 27, the self-holding circuit 27 holds the non-attachment discrimination signal Q in the ON state, and the non-attachment discrimination signal Q is input to the control circuit 25. Control circuit 2
When the non-attachment determination signal Q is input to 5, an abnormality detection signal U is output to the bonding apparatus.
【００２３】次に作用について説明する。図１に示すス
イッチＳＷ２は、半導体チップ５の極性により電圧レベ
ル及びその極性が決められているので、予め＋側又は−
側のどちらかの方向に切り換わっている（コンピュータ
２０からの切り換え信号ＳＷ２ＳＥＬによりその極性が
決められる）。スイッチＳＷ１は予め閉接点ＮＣ側とな
っている。そこでまず、図４（ａ）に示すように、クラ
ンパ１が閉じた状態で、キャピラリ２に挿通されたワイ
ヤ３の先端に放電電極４からの放電によってボール３ａ
を形成する。続いてクランパ１が開く。次に図４（ｂ）
に示すように、キャピラリ２が下降してボール３ａを半
導体チップ５のパッド電極６表面に押し付ける。Next, the operation will be described. Since the voltage level and the polarity of the switch SW2 shown in FIG.
(The polarity is determined by the switching signal SW2SEL from the computer 20). The switch SW1 is set to the closed contact NC side in advance. First, as shown in FIG. 4 (a), when the clamper 1 is closed, the tip of the wire 3 inserted through the capillary 2 is discharged from the discharge electrode 4 to the ball 3a.
To form Subsequently, the clamper 1 is opened. Next, FIG.
As shown in (2), the capillary 2 descends and presses the ball 3a against the surface of the pad electrode 6 of the semiconductor chip 5.
【００２４】その後はキャピラリ２を保持した超音波ホ
ーン（図示せず）により超音波を印加しながらキャピラ
リ２でボール３ａを加圧し、ボール３ａを押圧変形させ
てパッド電極６にボール３ａを接続する。この時、コン
ピュータ２０より切り換え信号ＳＷ１ＳＥＬが出力し、
スイッチＳＷ１は開接点ＮＯ側に切り換わり（図１、図
３参照）、ボール３ａが正常にパッド電極６に接続され
ていると、前記したようにパッド電極６は、抵抗Ｒｄ、
リードフレーム１０を経てアースされているので、電源
１６又は１７よりスイッチＳＷ２、抵抗１５、スイッチ
ＳＷ１、端子１３を経てワイヤ３に電流Ｉｄが流れる。
また図３（ａ）に示すように不着判別信号Ｑがオン状態
の場合には、図２に示す制御回路２５からのクリア信号
Ｒにより、自己保持回路２７の不着判別信号Ｑをオフ状
態に戻す。なお、図３には、スイッチＳＷ１が常時閉接
点ＮＣ側から常時開接点ＮＯ側に切り換わった時にクリ
ア信号Ｒが出力する場合を示したが、このクリア信号Ｒ
は、次のセット信号Ｓが出力されるまでに出力されれば
よい。Thereafter, the ball 3a is pressed by the capillary 2 while applying an ultrasonic wave by an ultrasonic horn (not shown) holding the capillary 2, and the ball 3a is pressed and deformed to connect the ball 3a to the pad electrode 6. . At this time, the switching signal SW1SEL is output from the computer 20,
The switch SW1 is switched to the open contact NO side (see FIGS. 1 and 3), and when the ball 3a is normally connected to the pad electrode 6, the pad electrode 6 is connected to the resistor Rd, as described above.
Since the power supply 16 or 17 is grounded via the lead frame 10, a current Id flows through the wire 3 via the switch SW 2, the resistor 15, the switch SW 1, and the terminal 13.
When the non-attachment discrimination signal Q is on as shown in FIG. 3A, the non-attachment discrimination signal Q of the self-holding circuit 27 is returned to the off state by the clear signal R from the control circuit 25 shown in FIG. . FIG. 3 shows a case where the clear signal R is output when the switch SW1 switches from the normally closed contact NC side to the normally open contact NO side.
May be output before the next set signal S is output.
【００２５】次に図４（ｃ）に示すように、キャピラリ
２及びクランパ１が共に上昇し、次のボール３ａを形成
するためのワイヤ３（テール）を繰り出しながらある時
点でクランパ１が閉じる。更にキャピラリ２及びクラン
パ１が上昇し、図４（ｄ）に示すように、ワイヤ３がボ
ール３ａの付け根から切断される。これにより、バンプ
７が形成される。Next, as shown in FIG. 4 (c), both the capillary 2 and the clamper 1 rise and the clamper 1 closes at a certain point while paying out a wire 3 (tail) for forming the next ball 3a. Further, the capillary 2 and the clamper 1 are raised, and as shown in FIG. 4D, the wire 3 is cut from the base of the ball 3a. Thereby, the bump 7 is formed.
【００２６】前記した動作において、キャピラリ２が上
昇してクランパ１が閉じるまでに、比較回路２４は変位
信号＋Ｖ０又は−Ｖ０と基準信号＋Ｖｔｈ又は−Ｖｔｈ
とを比較する。図４（ｃ）のように正常である場合に
は、ワイヤ３からアースまでの間は電気的経路が確立さ
れるので、ワイヤ３に電流Ｉｄが流れる。ワイヤ３に電
流Ｉｄが流れると、図３（ａ）に示すように、入力端子
２１には電流が流れなく、即ち電圧Ｖｄが発生しなく、
図２及び図３（ａ）に示す比較回路２４からセット信号
Ｓは出力しなく、ボール３ａの不着が発生しなかったこ
とが判る。In the above-described operation, by the time the capillary 2 rises and the clamper 1 closes, the comparison circuit 24 outputs the displacement signal + V0 or -V0 and the reference signal + Vth or -Vth.
Compare with In the case of normal operation as shown in FIG. 4C, an electric path is established from the wire 3 to the ground, so that the current Id flows through the wire 3. When the current Id flows through the wire 3, as shown in FIG. 3A, no current flows through the input terminal 21, that is, no voltage Vd is generated.
The set signal S is not output from the comparison circuit 24 shown in FIGS. 2 and 3A, and it can be seen that the ball 3a has not been attached.
【００２７】キャピラリ２が上昇してクランパ１が閉じ
るまでに、図５（ａ）に示すようにボール３ａの不着が
発生した場合には、ワイヤ３からアースまでの間は電気
的経路が確立されないので、入力端子２１の電圧値Ｖｄ
は浮遊容量成分Ｃｄにより電荷が蓄えられていくので、
図３（ｂ）に示すように過渡的な電圧の変化を示す。入
力端子２１に印加された電圧は、図２及び図３（ｂ）に
示すノイズ除去回路２２により平滑化され、変位抽出回
路２３により過渡的な電圧の変化を抽出して変位信号＋
Ｖ０又は−Ｖ０として比較回路２４に入力される。If the ball 3a is not attached as shown in FIG. 5 (a) before the capillary 2 rises and the clamper 1 closes, an electric path is not established from the wire 3 to the ground. Therefore, the voltage value Vd of the input terminal 21
Charge is stored by the stray capacitance component Cd,
FIG. 3B shows a transient voltage change. The voltage applied to the input terminal 21 is smoothed by a noise removal circuit 22 shown in FIGS. 2 and 3B, and a transition voltage change is extracted by a displacement extraction circuit 23 to obtain a displacement signal +
It is input to the comparison circuit 24 as V0 or -V0.
【００２８】そこで、比較回路２４は、変位信号＋Ｖ０
が基準信号＋Ｖｔｈの示すしきい値電圧＋Ｖｔｈより大
きい場合、又は変位信号−Ｖ０が基準信号−Ｖｔｈの示
すしきい値電圧−Ｖｔｈより小さい場合、セット信号Ｓ
を自己保持回路２７に入力する。自己保持回路２７は不
着判別信号Ｑをオン状態に保持し、この不着判別信号Ｑ
を制御回路２５に出力する。制御回路２５は異常検出信
号Ｕを出力し、この異常検出信号Ｕによりボンディング
装置が停止すると共に、ランプ、警報等により作業者に
通報する。不着の要因が除かれると、制御回路２５は自
己保持回路２７にクリア信号Ｒを出力し、不着判別信号
Ｑをオフ状態に戻す。Therefore, the comparison circuit 24 outputs the displacement signal + V0
Is larger than the threshold voltage + Vth indicated by the reference signal + Vth, or when the displacement signal -V0 is smaller than the threshold voltage -Vth indicated by the reference signal -Vth.
Is input to the self-holding circuit 27. The self-holding circuit 27 holds the non-attachment discrimination signal Q in the ON state,
Is output to the control circuit 25. The control circuit 25 outputs an abnormality detection signal U, and the abnormality detection signal U stops the bonding apparatus and notifies the worker by a lamp, an alarm, or the like. When the cause of the non-attachment is removed, the control circuit 25 outputs a clear signal R to the self-holding circuit 27 and returns the non-attachment determination signal Q to the off state.
【００２９】[0029]
【発明の効果】本発明によれば、ボールを半導体チップ
に接続した後、ワイヤをボールの付け根から切断するま
での期間に、ワイヤに電圧を印加し、ボール不着の有無
による前記期間中の電圧の変化を検出することによりボ
ール不着の有無を判定するので、バンプボンディングに
おけるボール不着を短時間に検出できる。According to the present invention, a voltage is applied to the wire during a period after the ball is connected to the semiconductor chip and before the wire is cut from the base of the ball, and the voltage during the period is determined based on the presence or absence of the ball. Since the presence / absence of ball non-adhesion is determined by detecting the change in ball contact, the ball non-adhesion in bump bonding can be detected in a short time.
【図１】本発明のバンプボンディングにおける不着検査
装置の一実施の形態を示す説明図である。FIG. 1 is an explanatory view showing one embodiment of a non-attachment inspection apparatus in bump bonding according to the present invention.
【図２】図１のコンピュータの構成を示すブロック図で
ある。FIG. 2 is a block diagram showing a configuration of the computer shown in FIG.
【図３】（ａ）は正常にボンディングされた場合のタイ
ミング図、（ｂ）はボール不着が発生した場合のタイミ
ング図である。FIG. 3A is a timing chart in a case where bonding is performed normally, and FIG. 3B is a timing chart in a case where ball non-adhesion occurs.
【図４】（ａ）乃至（ｄ）はバンプボンディング工程を
示す説明図である。FIGS. 4A to 4D are explanatory views showing a bump bonding step.
【図５】（ａ）、（ｂ）はボール不着状態の説明図であ
る。FIGS. 5A and 5B are explanatory diagrams of a state where a ball is not attached.
【図６】従来のワイヤボンディングにおける不着検査装
置の説明図である。FIG. 6 is an explanatory view of a conventional non-attachment inspection apparatus in wire bonding.
【図７】従来のワイヤボンディングにおける不着検出タ
イミング時のボンディング状態の説明図である。FIG. 7 is an explanatory diagram of a bonding state at the time of non-attachment detection timing in conventional wire bonding.
【図８】（ａ）、（ｂ）は半導体チップの抵抗の大小に
よる検出器に入力される電圧の変化を示す説明図であ
る。FIGS. 8A and 8B are explanatory diagrams showing a change in a voltage input to a detector depending on a resistance of a semiconductor chip.
１ クランパ ２ キャピラリ ３ ワイヤ ３ａ ボール ４ 放電電極 ５ 半導体チップ ６ パッド電極 ７ バンプ １０ リードフレーム １０ａ リード １１ 試料台 １６、１７ 電源 ２０ コンピュータ ２１ 入力端子 ２２ ノイズ除去回路 ２３ 変位抽出回路 ２４ 比較回路 ２５ 制御回路 ２６ 基準信号発生回路 ２７ 自己保持回路 Ｖｄ 入力電圧 ＋Ｖ０、−Ｖ０ 変位信号 Ｖｔ しきい値電圧 ＋Ｖｔｈ、−Ｖｔｈ 基準信号 Ｒ クリア信号 Ｓ セット信号 Ｕ 異常検出信号 DESCRIPTION OF SYMBOLS 1 Clamper 2 Capillary 3 Wire 3a Ball 4 Discharge electrode 5 Semiconductor chip 6 Pad electrode 7 Bump 10 Lead frame 10a Lead 11 Sample stand 16, 17 Power supply 20 Computer 21 Input terminal 22 Noise removal circuit 23 Displacement extraction circuit 24 Comparison circuit 25 Control circuit 26 Reference signal generation circuit 27 Self-hold circuit Vd Input voltage + V0, -V0 Displacement signal Vt Threshold voltage + Vth, -Vth Reference signal R Clear signal S Set signal U Abnormality detection signal
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１１年４月３０日（１９９９．４．３
０）[Submission date] April 30, 1999 (1999.4.3)
0)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】図面[Document name to be amended] Drawing
【補正対象項目名】図３[Correction target item name] Figure 3
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【図３】 ─────────────────────────────────────────────────────
FIG. 3 ────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１２年４月２０日（２０００．４．２
０）[Submission date] April 20, 2000 (200.4.2
0)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項３[Correction target item name] Claim 3
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１７[Correction target item name] 0017
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１７】上記課題を解決するための本発明の第２の
装置は、上記第１の装置において、前記コンピュータ
は、前記期間中の電位の変化を抽出して変位信号として
取り出す変位抽出回路と、前記変位信号としきい値信号
とを比較し、変位信号の値がしきい値信号の示すしきい
値を越えた場合にセット信号を出力する比較回路と、前
記しきい値信号を前記比較回路に入力すると共に、前記
セット信号により異常検出信号を出力する制御回路を備
えたことを特徴とする。The second device of the present invention for solving the aforementioned problems is the first device, the computer issues <br/> up as a displacement signal by extracting the change in potential during the period a displacement extracting circuit, said comparing the displacement signal and the threshold signal, and a comparator circuit for outputting a set signal when the value of the displacement signal exceeds the threshold value indicated by the threshold signal, said threshold A control circuit for inputting a signal to the comparison circuit and outputting an abnormality detection signal based on the set signal is provided.
【手続補正３】[Procedure amendment 3]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２１[Correction target item name] 0021
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２１】コンピュータ２０は図２に示すような構成
となっている。入力端子２１に入力される信号には、配
線経路やワイヤ３からのノイズ成分が含まれているの
で、ノイズ除去回路２２を通して平滑化してノイズ成分
を除去し、次の変位抽出回路２３を通して過渡的な電圧
の変化を抽出して正負の変位信号＋Ｖ０、−Ｖ０として
取り出し、この正負の変位信号＋Ｖ０、−Ｖ０は比較回
路２４に入力される。The computer 20 has a configuration as shown in FIG. Since the signal input to the input terminal 21 includes a noise component from the wiring path or the wire 3, the signal is smoothed through the noise removal circuit 22 to remove the noise component, and the signal is transiently transferred through the next displacement extraction circuit 23. positive and negative displacement signal + V0 extracts a change in a voltage taken out as -V0, the positive and negative displacement signal + V0, -V0 is input to the comparison circuit 24.
【手続補正４】[Procedure amendment 4]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２２[Correction target item name] 0022
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２２】制御回路２５には、予め不着を判定するた
めの電圧レベルを示す正負のしきい値が教示されてお
り、この正負のしきい値は、しきい値信号発生回路２６
に入力される。しきい値信号発生回路２６は、正負のし
きい値を基に正のしきい値信号＋Ｖｔｈと負のしきい値
信号−Ｖｔｈを生成し、この正負のしきい値信号＋Ｖｔ
ｈ、−Ｖｔｈは比較回路２４に入力される。比較回路２
４は、前記正の変位信号＋Ｖ０と前記正のしきい値信号
＋Ｖｔｈを比較し、前記正の変位信号＋Ｖ０の値が前記
正のしきい値信号＋Ｖｔｈの示すしきい値を越える場
合、又は前記負の変位信号−Ｖ０の値が前記負のしきい
値信号−Ｖｔｈの示すしきい値を下回る場合、即ち、変
位信号の値が正又は負のしきい値を越えた場合に、比較
回路２４はセット信号Ｓを出力する。このセット信号Ｓ
が自己保持回路２７に入力されると、自己保持回路２７
は不着判別信号Ｑをオン状態に保持し、この不着判別信
号Ｑが制御回路２５に入力される。制御回路２５に不着
判別信号Ｑが入力されると、異常検出信号Ｕがボンディ
ング装置に出力される。A positive / negative threshold value indicating a voltage level for judging non-attachment is previously taught to the control circuit 25. The positive / negative threshold value is determined by a threshold signal generation circuit 26.
Is input to The threshold signal generating circuit 26 generates a positive threshold signal + Vth and a negative threshold signal -Vth based on the positive and negative thresholds, and generates the positive and negative threshold signals + Vt.
h and −Vth are input to the comparison circuit 24. Comparison circuit 2
4 is the positive displacement signal + V0 and the positive threshold signal
+ Vth, and the value of the positive displacement signal + V0 is
If the value exceeds the threshold value indicated by the positive threshold signal + Vth, or if the value of the negative displacement signal -V0 is equal to the negative threshold value.
When the value is lower than the threshold value indicated by the value signal -Vth ,
When the value of the position signal exceeds the positive or negative threshold value, the comparison circuit 24 outputs the set signal S. This set signal S
Is input to the self-holding circuit 27,
Holds the non-attachment discrimination signal Q in the ON state, and the non-arrival discrimination signal Q is input to the control circuit 25. When the non-attachment determination signal Q is input to the control circuit 25, an abnormality detection signal U is output to the bonding device.
【手続補正５】[Procedure amendment 5]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２６[Correction target item name] 0026
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２６】前記した動作において、キャピラリ２が上
昇してクランパ１が閉じるまでに、比較回路２４は正の
変位信号＋Ｖ０と正のしきい値信号＋Ｖｔｈ、又は負の
変位信号＋Ｖ０と負のしきい値信号−Ｖｔｈを比較す
る。図４（ｃ）のように正常である場合には、ワイヤ３
からアースまでの間は電気的経路が確立されるので、ワ
イヤ３に電流Ｉｄが流れる。ワイヤ３に電流Ｉｄが流れ
ると、図３（ａ）に示すように、入力端子２１には電流
が流れなく、即ち電圧Ｖｄが発生しなく、図２及び図３
（ａ）に示す比較回路２４からセット信号Ｓは出力しな
く、ボール３ａの不着が発生しなかったことが判る。In the above-described operation, by the time the capillary 2 rises and the clamper 1 closes, the comparison circuit 24 outputs the positive displacement signal + V0 and the positive threshold signal + Vth , or the negative displacement signal + Vth .
Comparing the displacement signal + V0 and a negative threshold signal -Vt h. If the condition is normal as shown in FIG.
A current Id flows through the wire 3 since an electrical path is established from the ground to the ground. When the current Id flows through the wire 3, as shown in FIG. 3A, no current flows through the input terminal 21, that is, no voltage Vd is generated.
The set signal S is not output from the comparison circuit 24 shown in (a), and it can be seen that the ball 3a has not come off.
【手続補正６】[Procedure amendment 6]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００２８[Correction target item name] 0028
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００２８】そこで、比較回路２４は、正の変位信号＋
Ｖ０の値が正のしきい値信号＋Ｖｔｈの示すしきい値を
越える場合、又は負の変位信号−Ｖ０の値が負のしきい
値信号−Ｖｔｈの示すしきい値を下回る場合、即ち、変
位信号の値が正又は負のしきい値を越えた場合に、セッ
ト信号Ｓを自己保持回路２７に入力する。自己保持回路
２７は不着判別信号Ｑをオン状態に保持し、この不着判
別信号Ｑを制御回路２５に出力する。制御回路２５は異
常検出信号Ｕを出力し、この異常検出信号Ｕによりボン
ディング装置が停止すると共に、ランプ、警報等により
作業者に通報する。不着の要因が除かれると、制御回路
２５は自己保持回路２７にクリア信号Ｒを出力し、不着
判別信号Ｑをオフ状態に戻す。Therefore, the comparison circuit 24 outputs the positive displacement signal +
The threshold indicates the value of V0 is the positive threshold signal + Vth
Negative threshold, or if the value of the negative displacement signal -V0 is exceeding
When the value is lower than the threshold value indicated by the value signal -Vth ,
When the value of the position signal exceeds the positive or negative threshold value, the set signal S is input to the self-holding circuit 27. The self-holding circuit 27 holds the non-attachment discrimination signal Q in the ON state, and outputs this non-attachment discrimination signal Q to the control circuit 25. The control circuit 25 outputs an abnormality detection signal U, and the abnormality detection signal U stops the bonding apparatus and notifies the worker by a lamp, an alarm, or the like. When the cause of the non-attachment is removed, the control circuit 25 outputs a clear signal R to the self-holding circuit 27 and returns the non-attachment determination signal Q to the off state.
【手続補正７】[Procedure amendment 7]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】符号の説明[Correction target item name] Explanation of sign
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【符号の説明】 １ クランパ ２ キャピラリ ３ ワイヤ ３ａ ボール ４ 放電電極 ５ 半導体チップ ６ パッド電極 ７ バンプ １０ リードフレーム １０ａ リード １１ 試料台 １６、１７ 電源 ２０ コンピュータ ２１ 入力端子 ２２ ノイズ除去回路 ２３ 変位抽出回路 ２４ 比較回路 ２５ 制御回路 ２６ しきい値信号発生回路 ２７ 自己保持回路 Ｖｄ 入力電圧 ＋Ｖ０、−Ｖ０ 変位信号 Ｖｔ しきい値電圧 ＋Ｖｔｈ、−Ｖｔｈ しきい値信号 Ｒ クリア信号 Ｓ セット信号 Ｕ 異常検出信号[Description of Signs] 1 clamper 2 capillary 3 wire 3a ball 4 discharge electrode 5 semiconductor chip 6 pad electrode 7 bump 10 lead frame 10a lead 11 sample table 16, 17 power supply 20 computer 21 input terminal 22 noise removal circuit 23 displacement extraction circuit 24 Comparison circuit 25 Control circuit 26 Threshold signal generation circuit 27 Self-holding circuit Vd Input voltage + V0, -V0 Displacement signal Vt Threshold voltage + Vth, -Vth threshold signal R Clear signal S Set signal U Abnormality detection signal
【手続補正８】[Procedure amendment 8]
【補正対象書類名】図面[Document name to be amended] Drawing
【補正対象項目名】図２[Correction target item name] Figure 2
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【図２】 FIG. 2
Claims (3)
体チップに接続した後、ワイヤをボールの付け根から切
断して半導体チップにバンプを形成するバンプボンディ
ング方法において、ボールを半導体チップに接続した
後、ワイヤをボールの付け根から切断するまでの期間
に、ワイヤに電圧を印加し、ボール不着の有無による前
記期間中の電圧の変化を検出することによりボール不着
の有無を判定することを特徴とするバンプボンディング
における不着検査方法。1. A bump bonding method for connecting a ball formed at the tip of a wire to a semiconductor chip and then cutting the wire from the base of the ball to form a bump on the semiconductor chip, after connecting the ball to the semiconductor chip. In the period until the wire is cut from the base of the ball, a voltage is applied to the wire, and the presence or absence of the ball is determined by detecting a change in the voltage during the period due to the presence or absence of the ball. Non-adhesion inspection method in bump bonding.
体チップに接続した後、ワイヤをボールの付け根から切
断して半導体チップにバンプを形成するバンプボンディ
ング装置において、ボールを半導体チップに接続した
後、ワイヤをボールの付け根から切断するまでの期間
に、ワイヤに電圧を印加する電源と、ボール不着の有無
による前記期間中の電圧の変化を検出することによりボ
ール不着の有無を判定するコンピュータを備えたことを
特徴とするバンプボンディングにおける不着検査装置。2. A bump bonding apparatus for connecting a ball formed at the tip of a wire to a semiconductor chip, and then cutting the wire from the base of the ball to form a bump on the semiconductor chip, after connecting the ball to the semiconductor chip. A power supply that applies a voltage to the wire during a period until the wire is cut from the base of the ball, and a computer that determines the presence or absence of ball non-adhesion by detecting a change in voltage during the period due to the presence or absence of ball non-adhesion. Non-adhesion inspection apparatus for bump bonding.
の変化を抽出して変位信号として取り出し示す変位抽出
回路と、前記変位信号と基準信号とを比較し、変位信号
の絶対値が基準信号の示すしきい値電圧の絶対値より大
きい場合にセット信号を出力する比較回路と、前記基準
信号を前記比較回路に入力すると共に、前記セット信号
により異常検出信号を出力する制御回路を備えたことを
特徴とする請求項２記載のバンプボンディングにおける
不着検査装置。3. The computer according to claim 1, wherein the computer compares the displacement signal with a reference signal and extracts a change in potential during the period and extracts the change as a displacement signal. A comparison circuit that outputs a set signal when the absolute value of the threshold voltage is greater than the absolute value of the threshold voltage, and a control circuit that inputs the reference signal to the comparison circuit and outputs an abnormality detection signal based on the set signal. The non-adhesion inspection device for bump bonding according to claim 2.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11113793A JP2000306940A (en) | 1999-04-21 | 1999-04-21 | Method and device for inspecting nonadhesion in bump bonding |
| TW089104479A TW454279B (en) | 1999-04-21 | 2000-03-13 | Method and device for inspecting non-adhesion in bump bonding |
| KR1020000020225A KR20000071716A (en) | 1999-04-21 | 2000-04-18 | Bonding failure inspection method and apparatus for bump bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11113793A JP2000306940A (en) | 1999-04-21 | 1999-04-21 | Method and device for inspecting nonadhesion in bump bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000306940A true JP2000306940A (en) | 2000-11-02 |
Family
ID=14621239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11113793A Pending JP2000306940A (en) | 1999-04-21 | 1999-04-21 | Method and device for inspecting nonadhesion in bump bonding |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2000306940A (en) |
| KR (1) | KR20000071716A (en) |
| TW (1) | TW454279B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7370785B2 (en) | 2003-09-22 | 2008-05-13 | Kabushiki Kaisha Shinkawa | Wire bonding method and apparatus |
| US8678266B2 (en) | 2005-02-24 | 2014-03-25 | Kabushiki Kaisha Shinkawa | Wire bonding method |
| KR20140138967A (en) | 2012-11-16 | 2014-12-04 | 가부시키가이샤 신가와 | Wire bonding device and method for manufacturing semiconductor device |
| KR20140138903A (en) | 2012-11-16 | 2014-12-04 | 가부시키가이샤 신가와 | Wire bonding apparatus and method for producing semiconductor device |
| KR20150061659A (en) | 2012-11-16 | 2015-06-04 | 가부시키가이샤 신가와 | Wire bonding device and wire bonding method |
| WO2017164386A1 (en) * | 2016-03-25 | 2017-09-28 | 株式会社新川 | Wire bonding device, circuit for wire bonding device, and method for manufacturing semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101326098B1 (en) * | 2013-01-21 | 2013-11-06 | 주식회사 아이비에스 | Method for inspecting wire bonding |
-
1999
- 1999-04-21 JP JP11113793A patent/JP2000306940A/en active Pending
-
2000
- 2000-03-13 TW TW089104479A patent/TW454279B/en not_active IP Right Cessation
- 2000-04-18 KR KR1020000020225A patent/KR20000071716A/en not_active Application Discontinuation
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7370785B2 (en) | 2003-09-22 | 2008-05-13 | Kabushiki Kaisha Shinkawa | Wire bonding method and apparatus |
| US8678266B2 (en) | 2005-02-24 | 2014-03-25 | Kabushiki Kaisha Shinkawa | Wire bonding method |
| KR20140138967A (en) | 2012-11-16 | 2014-12-04 | 가부시키가이샤 신가와 | Wire bonding device and method for manufacturing semiconductor device |
| KR20140138903A (en) | 2012-11-16 | 2014-12-04 | 가부시키가이샤 신가와 | Wire bonding apparatus and method for producing semiconductor device |
| KR20150061659A (en) | 2012-11-16 | 2015-06-04 | 가부시키가이샤 신가와 | Wire bonding device and wire bonding method |
| US9368471B2 (en) | 2012-11-16 | 2016-06-14 | Shinkawa Ltd. | Wire-bonding apparatus and method of manufacturing semiconductor device |
| US9457421B2 (en) | 2012-11-16 | 2016-10-04 | Shinkawa Ltd. | Wire-bonding apparatus and method of wire bonding |
| US9793236B2 (en) | 2012-11-16 | 2017-10-17 | Shinkawa Ltd. | Wire-bonding apparatus and method of manufacturing semiconductor device |
| WO2017164386A1 (en) * | 2016-03-25 | 2017-09-28 | 株式会社新川 | Wire bonding device, circuit for wire bonding device, and method for manufacturing semiconductor device |
| CN109155260A (en) * | 2016-03-25 | 2019-01-04 | 株式会社新川 | The manufacturing method of lead wire connecting apparatus, lead wire connecting apparatus circuit and semiconductor device |
| US10964661B2 (en) | 2016-03-25 | 2021-03-30 | Shinkawa Ltd. | Wire bonding apparatus, circuit for wire bonding apparatus, and method for manufacturing semiconductor device |
| CN109155260B (en) * | 2016-03-25 | 2021-10-29 | 株式会社新川 | Wire bonding device, circuit thereof, and method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW454279B (en) | 2001-09-11 |
| KR20000071716A (en) | 2000-11-25 |
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