JPH09326409A - Judging method for wire bonding condition - Google Patents

Judging method for wire bonding condition

Info

Publication number
JPH09326409A
JPH09326409A JP16371196A JP16371196A JPH09326409A JP H09326409 A JPH09326409 A JP H09326409A JP 16371196 A JP16371196 A JP 16371196A JP 16371196 A JP16371196 A JP 16371196A JP H09326409 A JPH09326409 A JP H09326409A
Authority
JP
Japan
Prior art keywords
wire
pellet
wire bonding
electrode
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16371196A
Other languages
Japanese (ja)
Inventor
Makoto Arie
誠 有江
Satoru Uemura
哲 植村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Mechatronics Co Ltd
Original Assignee
Toshiba Mechatronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Mechatronics Co Ltd filed Critical Toshiba Mechatronics Co Ltd
Priority to JP16371196A priority Critical patent/JPH09326409A/en
Publication of JPH09326409A publication Critical patent/JPH09326409A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To judge the wire bonding condition of a semiconductor pellet, without having influence on the current flow direction by using an a-c current for conduction between the wire and pellet. SOLUTION: The wire bonding operation uses a controller 21 which instructs a switch s to turn on to apply a voltage between the wire 12 and the pellet 15 until a capillary 11 arrives at a lead 14a of a lead frame 14 after the ball at the wire top end is bonded to an electrode 15a. If the bonding condition of the wire to the electrode 15a is good, an a-c current flows on the wire 12. A detector circuit 20 detects this current through a pickup coil 18, etc., to provide for the controller 21 with an output indicating the bonding is good. If any peel appears between the wire 12 and electrode 15a, no current flows on the wire and detector circuit 20 judges the bonding to be defective.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、ワイヤボンディン
グ作業における、ボンディング状態の判定方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for determining a bonding state in wire bonding work.

【0002】[0002]

【従来の技術】ワイヤボンディング作業は、半導体ペレ
ット(以下、単に「ペレット」という)の電極とリード
フレームのリードとを導電性のワイヤにて電気的に接続
(ワイヤボンディング)するものであり、ワイヤボンデ
ィング中に、そのボンディング状態の判定が行なわれる
こともある。
2. Description of the Related Art In wire bonding work, an electrode of a semiconductor pellet (hereinafter, simply referred to as "pellet") and a lead of a lead frame are electrically connected by a conductive wire (wire bonding). During bonding, the bonding state may be determined.

【0003】この判定に関する公知技術としては、例え
ば特開昭63−7643号公報に記載されている。これ
によると、ペレットの電極へワイヤボンディングが終了
すると、ワイヤとペレットとの間に直流を流し、このと
きの通電状態を検出することにより、ボンディング状態
良、剥がれ、ショート等のワイヤボンディング状態を判
定している。
A known technique for this determination is described in, for example, Japanese Patent Laid-Open No. 63-7643. According to this, when wire bonding to the electrode of the pellet is completed, a direct current is applied between the wire and the pellet, and by detecting the energization state at this time, the wire bonding state such as good bonding state, peeling, short circuit, etc. is determined. are doing.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上記の
従来技術においては次の欠点を有する。つまり、図2に
示すように、ペレット1、或いは個々の電極ごとに、そ
の通電方向が、ワイヤ2側からペレット1側に向かうも
の(図2(A))や、ペレット1側からワイヤ2側に向
かうもの(図2(B))がある。このため、ワイヤとペ
レットとの間に直流を流す上記の従来技術においては、
ワイヤボンディング状態を判定する前に、まずペレット
における通電方向を判別することが必要で、次に通電方
向が変わる度に、流す電流の向きをその通電方向に合わ
せるといった面倒な設定作業が必要となるのである。
However, the above-mentioned prior art has the following drawbacks. That is, as shown in FIG. 2, the energization direction of the pellet 1 or each electrode is from the wire 2 side to the pellet 1 side (FIG. 2 (A)), or the pellet 1 side to the wire 2 side. There is one (Fig. 2 (B)) heading for. Therefore, in the above-mentioned prior art in which a direct current is passed between the wire and the pellet,
Before determining the wire bonding state, it is necessary to first determine the energization direction in the pellet, and then, each time the energization direction changes, it is necessary to perform a troublesome setting work such as adjusting the direction of the current to flow to the energization direction. Of.

【0005】本発明は、ペレットの通電方向が変わって
もそれに影響されることなく、しかもそのための面倒な
設定作業を必要とせずしてワイヤボンディング状態を判
定できるようにすることを目的とする。
An object of the present invention is to make it possible to determine the wire bonding state without being affected by the change in the energization direction of the pellet and without requiring a troublesome setting work for that.

【0006】[0006]

【課題を解決するための手段】本発明は、上記問題点を
解決するため、半導体ペレットの電極へのワイヤボンデ
ィングが終了した後、ワイヤと半導体ペレットとの間に
交流を流し、その通電状態によりワイヤボンディング状
態の判定を行なうことを特徴とする。
In order to solve the above problems, the present invention provides a method in which an alternating current is applied between a wire and a semiconductor pellet after completion of wire bonding to the electrode of the semiconductor pellet, and the electrical conduction state The feature is that the wire bonding state is determined.

【0007】本発明は上述のように、ワイヤと半導体ペ
レットとの間に交流を流すものであるから、半導体ペレ
ットにおける通電方向に影響を受けることなくワイヤボ
ンディング状態を判定することができる。
As described above, according to the present invention, an alternating current is passed between the wire and the semiconductor pellet, so that the wire bonding state can be determined without being affected by the current-carrying direction in the semiconductor pellet.

【0008】[0008]

【発明の実施の形態】本発明は、半導体ペレットの電極
へのワイヤボンディングが終了した後、ボンディングさ
れた前記ワイヤと前記半導体ペレットとの間を通電し、
その通電状態を検出してボンディング状態を判定するワ
イヤボンディング状態の判定方法において、前記ワイヤ
と前記半導体ペレットとの間の通電に交流を用いること
を特徴とする。
BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention, after wire bonding to an electrode of a semiconductor pellet is completed, a current is applied between the bonded wire and the semiconductor pellet,
In the wire bonding state determining method for determining the bonding state by detecting the current-carrying state, alternating current is used for the current supply between the wire and the semiconductor pellet.

【0009】本発明によれば、半導体ペレットの電極へ
のワイヤボンディングが終了した後ボンディングされた
ワイヤと半導体ペレットとの間を通電し、その通電状態
を検出してボンディング状態が判定される。ここで通電
に交流が用いられるため、半導体ペレットにおける通電
方向に影響を受けることなくワイヤボンディング状態を
判定することができる。
According to the present invention, after the wire bonding to the electrode of the semiconductor pellet is completed, the bonded wire and the semiconductor pellet are energized, and the energized state is detected to determine the bonding state. Here, since alternating current is used for energization, the wire bonding state can be determined without being affected by the energization direction in the semiconductor pellet.

【0010】[0010]

【実施例】以下、本発明の実施例を図面を用いて説明す
る。図1は、本発明が適用されてなるワイヤボンディン
グ装置の構成図である。図1において、ワイヤボンディ
ング装置10は、キャピラリ11と、ワイヤ12を巻回
するスプール13を有する。キャピラリ11は、ワイヤ
12を挿通保持可能とし、前工程にてリードフレーム1
4上にマウントされたペレット15の電極15aとリー
ドフレーム14のリード14aとの間を移動し、両者間
を金線などの導電性のワイヤ12にてボンディングす
る。リードフレーム14は、接地される。またスプール
13には、変圧器16の2次コイル16bの一方の端が
接続される。この2次コイル16bの他端は接地され
る。変圧器16の1次コイル16aは、スイッチsを介
して交流電源17と接続される。このスイッチsは、制
御装置21にてON/OFFされる。なお本実施例にお
ける交流電源17は、周波数60KHzの交流波電源が
用いられるが、別の周波数でも構わない。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram of a wire bonding apparatus to which the present invention is applied. In FIG. 1, a wire bonding device 10 has a capillary 11 and a spool 13 around which a wire 12 is wound. The capillary 11 can insert and hold the wire 12, and in the previous step, the lead frame 1
The electrode 15a of the pellet 15 mounted on the wire 4 and the lead 14a of the lead frame 14 are moved to bond them with a conductive wire 12 such as a gold wire. The lead frame 14 is grounded. Further, one end of the secondary coil 16b of the transformer 16 is connected to the spool 13. The other end of the secondary coil 16b is grounded. The primary coil 16a of the transformer 16 is connected to the AC power supply 17 via the switch s. The switch s is turned on / off by the control device 21. The AC power supply 17 in this embodiment is an AC wave power supply having a frequency of 60 KHz, but another frequency may be used.

【0011】キャピラリ11の上方で、キャピラリ11
とスプール13間に位置するワイヤ12に対し、変成器
としてのピックアップコイル18がこのワイヤ12に対
して非接触状態で設けられる。このピックアップコイル
18は、増幅器19を介して検波回路20に接続され
る。この検波回路20は、制御装置21に接続されてお
り、この検波回路20には、ワイヤ12に電流が流れる
ことによってピックアップコイル18に電流を生じ、そ
してこの電流に基づく電圧が増幅器19を介して入力さ
れる。
Above the capillary 11, the capillary 11
A pickup coil 18 as a transformer is provided in a non-contact state with respect to the wire 12 located between the wire 12 and the spool 13. The pickup coil 18 is connected to a detection circuit 20 via an amplifier 19. The detection circuit 20 is connected to a control device 21. In the detection circuit 20, a current flows through the wire 12 to generate a current in the pickup coil 18, and a voltage based on this current is transmitted via an amplifier 19. Is entered.

【0012】検波回路20は、増幅器19からの電圧の
有無に基づいてワイヤボンディング状態の良否判定を下
し、その旨を制御装置に21に出力する。すなわち、検
波回路20は、後述のタイミングにてスイッチsがON
状態とされた期間内において、増幅器19から電圧が入
力されればワイヤボンディング状態は良であると判定
し、入力されない場合に不良であると判定する。なお実
際には、増幅器19より電圧が入力される場合、その電
圧から検出される交流波の周波数は、交流電源17の周
波数と等しい60KHzとなるから、増幅器19からの
出力電圧から60KHzの交流波が検出されたときにワ
イヤボンディング状態は良であると判定するようになっ
ている。
The detection circuit 20 determines whether the wire bonding state is good or not based on the presence or absence of the voltage from the amplifier 19, and outputs the fact to the control device 21. That is, the detection circuit 20 turns on the switch s at the timing described later.
If a voltage is input from the amplifier 19 within the state of the state, it is determined that the wire bonding state is good, and if not input, it is determined that the wire bonding state is bad. In reality, when a voltage is input from the amplifier 19, the frequency of the AC wave detected from the voltage is 60 KHz, which is equal to the frequency of the AC power supply 17, so that the AC voltage of 60 KHz from the output voltage from the amplifier 19 When is detected, it is determined that the wire bonding state is good.

【0013】次に、上記構成による作動について説明す
る。
Next, the operation of the above configuration will be described.

【0014】まず、キャピラリ11から導出されたワイ
ヤ12の先端には、放電によりボールが形成される。次
に、キャピラリ11はペレット15の電極15aに向け
て下降し、超音波振動を付与しながらボールを電極15
a上にボンディングする。次に、キャピラリ11は所定
高さ位置まで上昇し、円弧状の軌跡を描くようにしてリ
ードフレーム14のリード14a上ヘ移動してワイヤを
導き、ワイヤ12の中途部を超音波振動を付与しながら
リードフレーム14のリード14a上にボンディングす
る。その後、キャピラリ11は上昇するとともに、不図
示のクランパを用いてワイヤ12を切断してワイヤボン
ディング動作の1サイクルを終了する。以下、上述の動
作を繰り返して、ペレット15の各電極15aとリード
フレーム14における各リード14a間にワイヤボンデ
ィングを施す。
First, a ball is formed at the tip of the wire 12 led out from the capillary 11 by electric discharge. Next, the capillary 11 descends toward the electrode 15a of the pellet 15 to move the ball to the electrode 15a while applying ultrasonic vibration.
Bond on a. Next, the capillary 11 rises to a predetermined height position and moves on the lead 14a of the lead frame 14 so as to draw an arcuate trajectory to guide the wire, and ultrasonic vibration is applied to the midway portion of the wire 12. Meanwhile, bonding is performed on the leads 14a of the lead frame 14. After that, the capillary 11 rises and the wire 12 is cut by using a clamper (not shown) to complete one cycle of the wire bonding operation. Hereinafter, the above-described operation is repeated to perform wire bonding between each electrode 15a of the pellet 15 and each lead 14a of the lead frame 14.

【0015】さて上述のワイヤボンディング動作におい
て、ワイヤ先端のボールが電極15aにボンディングさ
れた時点より、キャピラリ11がリードフレーム14の
リード14a上に到達するまで間、制御装置21の指令
によりスイッチsはON状態とされ、ワイヤ12とペレ
ット15との間に電圧が印加される。そして、ワイヤ1
2と電極15aとのボンディング状態が、剥がれ等が生
じていない良好である場合には、ワイヤ12には60K
Hzの交流波電流が流れる。検波回路20は、このこと
をピックアップコイル18、増幅器19を介して検出
し、前述したようにボンディング状態は良である旨を制
御装置21に出力する。
In the wire bonding operation described above, the switch s is operated by a command from the controller 21 from the time when the ball at the tip of the wire is bonded to the electrode 15a until the capillary 11 reaches the lead 14a of the lead frame 14. It is turned on and a voltage is applied between the wire 12 and the pellet 15. And wire 1
When the bonding state between the electrode 2 and the electrode 15a is good with no peeling or the like, the wire 12 has 60K.
AC wave current of Hz flows. The detection circuit 20 detects this through the pickup coil 18 and the amplifier 19, and outputs to the control device 21 that the bonding state is good as described above.

【0016】また、上記期間内において、ワイヤ12と
電極15a間に剥がれ等が生じた場合、その発生時点に
てワイヤ12には電流が流れなくなり、ピックアップコ
イル18にも電流が発生しなくなる。このため、検波回
路20にも電圧が入力されなくなり、60KHzの交流
波も検出されない。従って、検波回路20は、ボンディ
ング状態が不良と判定し、制御装置21に不良信号を出
力する。制御装置21においては、検波回路20より良
信号が入力されればワイヤボンディング動作を継続さ
せ、不良信号が入力されれば、その時点で警報を発した
り、ワイヤボンディング動作を停止させる。
If peeling occurs between the wire 12 and the electrode 15a within the above period, no current flows through the wire 12 at the time of occurrence and no current is generated in the pickup coil 18. For this reason, no voltage is input to the detection circuit 20, and no AC wave of 60 KHz is detected. Therefore, the detection circuit 20 determines that the bonding state is defective and outputs a defective signal to the control device 21. In the control device 21, if a good signal is input from the detection circuit 20, the wire bonding operation is continued, and if a bad signal is input, an alarm is issued at that point or the wire bonding operation is stopped.

【0017】上記実施例によれば、ワイヤ12とペレッ
ト15との間に電圧を印加するための電源として交流電
源17を用いているので、図2に示したような、ペレッ
ト15の通電方向が変わってもそれに影響されることな
く、しかも面倒な設定作業を必要とせずしてワイヤ12
と電極15aとのワイヤボンディング状態を判定するこ
とができる。
According to the above-described embodiment, since the AC power supply 17 is used as the power supply for applying the voltage between the wire 12 and the pellet 15, the energization direction of the pellet 15 as shown in FIG. Even if it changes, the wire 12 is not affected by it and does not require complicated setting work.
The wire bonding state between the electrode 15a and the electrode 15a can be determined.

【0018】また、ワイヤ12における通電状態をピッ
クアップコイル18(変成器)を用いて検出しているの
で、例えば、ペレット15の電気抵抗が大きくワイヤ1
2に流れる電流が微弱である場合でも、これを精度良く
検出することができ、判定精度を向上させることができ
る。
Further, since the energized state of the wire 12 is detected by using the pickup coil 18 (transformer), for example, the electric resistance of the pellet 15 is large and the wire 1 is large.
Even if the current flowing through 2 is weak, this can be detected with high accuracy, and the determination accuracy can be improved.

【0019】また、検波回路20は、ワイヤ12に流れ
る交流の有無に基づいてボンディング状態の良否を判定
しているので、判定結果がワイヤ12内に流れる電流の
大小に影響されることがない。よって、ペレット15の
品種変更等によりペレット15の持つ電気抵抗の大きさ
が変わった場合でも、交流電源17の出力電圧を設定変
更する煩わしさを生じることなく、ワイヤボンディング
状態を精度良く検出することができる。
Further, since the detection circuit 20 determines the quality of the bonding state based on the presence or absence of the alternating current flowing through the wire 12, the determination result is not affected by the magnitude of the current flowing through the wire 12. Therefore, even if the magnitude of the electric resistance of the pellet 15 is changed due to a change in the type of the pellet 15, the wire bonding state can be accurately detected without the trouble of changing the setting of the output voltage of the AC power supply 17. You can

【0020】なお、ピックアップコイル18をワイヤ1
2の周囲に設けた例で説明したが、その配置位置は、例
えばスプール13と2次コイル16bとを接続する配線
中であっても良い。
The pickup coil 18 is connected to the wire 1
Although the example has been described in which it is provided around 2, the arrangement position may be, for example, in the wiring connecting the spool 13 and the secondary coil 16b.

【0021】[0021]

【発明の効果】本発明によれば、ペレットの通電方向が
変わってもそれに影響されることなく、しかもそのため
の面倒な設定作業を必要とせずしてワイヤボンディング
状態を判定することができる。
According to the present invention, even if the energizing direction of the pellet is changed, it is not affected, and the wire bonding state can be determined without the troublesome setting work.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明が適用されてなるワイヤボンディング装
置の構成図である。
FIG. 1 is a configuration diagram of a wire bonding apparatus to which the present invention is applied.

【図2】半導体ペレットの通電方向を示す構成図であ
る。
FIG. 2 is a configuration diagram showing an energization direction of a semiconductor pellet.

【符号の説明】[Explanation of symbols]

10 ワイヤボンディング装置 11 キャピラリ 12 ワイヤ 13 スプール 14 リードフレーム 14aリード 15 ペレット 15a電極 17 交流電源 18 ピックアップコイル(変成器) 20 検波回路 21 制御装置 10 Wire Bonding Device 11 Capillary 12 Wire 13 Spool 14 Lead Frame 14a Lead 15 Pellet 15a Electrode 17 AC Power Supply 18 Pickup Coil (Transformer) 20 Detection Circuit 21 Control Device

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体ペレットの電極へのワイヤボンデ
ィングが終了した後、ボンディングされた前記ワイヤと
前記半導体ペレットとの間を通電し、その通電状態を検
出してボンディング状態を判定するワイヤボンディング
状態の判定方法において、前記ワイヤと前記半導体ペレ
ットとの間の通電に交流を用いることを特徴とするワイ
ヤボンディング状態の判定方法
1. A wire bonding state in which after the wire bonding to the electrode of the semiconductor pellet is completed, the bonded wire and the semiconductor pellet are energized and the energized state is detected to determine the bonding state. In the determination method, a method for determining a wire bonding state, characterized in that an alternating current is used for energization between the wire and the semiconductor pellet
【請求項2】 通電状態は、通電回路を流れる交流を変
成器を用いて検出することを特徴とする請求項1に記載
のワイヤボンディング状態の判定方法。
2. The method for determining the wire bonding state according to claim 1, wherein the energized state is detected by using a transformer to detect alternating current flowing in the energized circuit.
【請求項3】 ワイヤに流れる交流の有無を変成器を用
いて検出することを特徴とする請求項2に記載のワイヤ
ボンディング状態の判定方法。
3. The wire bonding state determination method according to claim 2, wherein the presence or absence of alternating current flowing through the wire is detected by using a transformer.
JP16371196A 1996-06-04 1996-06-04 Judging method for wire bonding condition Pending JPH09326409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16371196A JPH09326409A (en) 1996-06-04 1996-06-04 Judging method for wire bonding condition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16371196A JPH09326409A (en) 1996-06-04 1996-06-04 Judging method for wire bonding condition

Publications (1)

Publication Number Publication Date
JPH09326409A true JPH09326409A (en) 1997-12-16

Family

ID=15779192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16371196A Pending JPH09326409A (en) 1996-06-04 1996-06-04 Judging method for wire bonding condition

Country Status (1)

Country Link
JP (1) JPH09326409A (en)

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