JPH0821620B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH0821620B2
JPH0821620B2 JP2132142A JP13214290A JPH0821620B2 JP H0821620 B2 JPH0821620 B2 JP H0821620B2 JP 2132142 A JP2132142 A JP 2132142A JP 13214290 A JP13214290 A JP 13214290A JP H0821620 B2 JPH0821620 B2 JP H0821620B2
Authority
JP
Japan
Prior art keywords
semiconductor
island
low
semiconductor layer
diffusion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2132142A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0426139A (ja
Inventor
知秀 寺島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2132142A priority Critical patent/JPH0821620B2/ja
Priority to US07/697,621 priority patent/US5065219A/en
Priority to DE4116271A priority patent/DE4116271A1/de
Publication of JPH0426139A publication Critical patent/JPH0426139A/ja
Publication of JPH0821620B2 publication Critical patent/JPH0821620B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2132142A 1990-05-21 1990-05-21 半導体装置 Expired - Lifetime JPH0821620B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2132142A JPH0821620B2 (ja) 1990-05-21 1990-05-21 半導体装置
US07/697,621 US5065219A (en) 1990-05-21 1991-05-09 Semiconductor device and fabrication method thereof
DE4116271A DE4116271A1 (de) 1990-05-21 1991-05-17 Halbleitervorrichtung und verfahren zur herstellung derselben

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2132142A JPH0821620B2 (ja) 1990-05-21 1990-05-21 半導体装置

Publications (2)

Publication Number Publication Date
JPH0426139A JPH0426139A (ja) 1992-01-29
JPH0821620B2 true JPH0821620B2 (ja) 1996-03-04

Family

ID=15074346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2132142A Expired - Lifetime JPH0821620B2 (ja) 1990-05-21 1990-05-21 半導体装置

Country Status (3)

Country Link
US (1) US5065219A (OSRAM)
JP (1) JPH0821620B2 (OSRAM)
DE (1) DE4116271A1 (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5557125A (en) * 1993-12-08 1996-09-17 Lucent Technologies Inc. Dielectrically isolated semiconductor devices having improved characteristics
TW512526B (en) * 2000-09-07 2002-12-01 Sanyo Electric Co Semiconductor integrated circuit device and manufacturing method thereof
US6921946B2 (en) * 2002-12-16 2005-07-26 Koninklijke Philips Electronics N.V. Test structure for electrical well-to-well overlay
CN102456738A (zh) * 2010-10-29 2012-05-16 上海宏力半导体制造有限公司 一种vdmos晶体管
CN102254939A (zh) * 2011-08-08 2011-11-23 上海宏力半导体制造有限公司 垂直双扩散mos晶体管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1276451A (en) * 1969-01-16 1972-06-01 Signetics Corp Semiconductor structure and method for lowering the collector resistance
JPS523862Y2 (OSRAM) * 1973-07-09 1977-01-27
JPS5551342A (en) * 1978-10-12 1980-04-15 Toshiba Corp Brazing test unit
US4807012A (en) * 1985-09-18 1989-02-21 Harris Corporation IC which eliminates support bias influence on dielectrically isolated components
JPS63155775A (ja) * 1986-12-19 1988-06-28 Oki Electric Ind Co Ltd 半導体装置
US5055721A (en) * 1989-04-13 1991-10-08 Mitsubishi Denki Kabushiki Kaisha Drive circuit for igbt device

Also Published As

Publication number Publication date
US5065219A (en) 1991-11-12
DE4116271A1 (de) 1991-11-28
DE4116271C2 (OSRAM) 1993-07-29
JPH0426139A (ja) 1992-01-29

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