JPH08203857A - Adhesive tape for eliminating foreign object on semiconductor wafer - Google Patents

Abstract

PURPOSE: To efficiently eliminate foreign objects on a wafer without causing any problems in working efficiency and paste remainder in the dry washing system using an adhesive tape. CONSTITUTION: An adhesive layer 12 which contains base polymer and polymerization compound on a supporting film 11 as an adhesive tape 1 for eliminating foreign objects, is cured by an active energy source, and causes a molecular structure to be in three-dimensional net shape is provided and the volume shrinkage rate after curing due to the active energy source of the adhesive layer 12 should be within 3-10%.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive tape for removing foreign matters adhering to a semiconductor wafer, which is applied to a cleaning step in a semiconductor manufacturing process.

[0002]

2. Description of the Related Art As the density of LSIs increases, the degree of integration increases, and the diversification of circuits progresses, foreign substances (particles) such as dust and metal impurities existing on semiconductor wafers increase the yield of products and increase the reliability of products. Has come to have a great influence on. For example, a foreign substance existing on the surface of a semiconductor wafer (circuit pattern forming surface) causes a disconnection or a short circuit of a circuit when the circuit is formed. In addition, foreign matter existing on the back surface of the semiconductor wafer (the surface opposite to the circuit pattern surface) may cause the focus to be deviated during the exposure process at the time of circuit formation. -It causes

Therefore, in the LSI manufacturing process, efforts are being made to improve the level of cleanliness in the manufacturing process and the level of wafer cleaning technology, and various cleaning technologies have been proposed and implemented. Especially, the washing process is about 3
It accounts for 0%, which is the key to improving yield and reliability. However, with the recent increase in the density and integration of LSIs, the problems of the conventional wafer cleaning method have become apparent.

The wafer cleaning method includes wet cleaning (using ultrapure water, chemical solution, etc.) and dry cleaning (UV ozone, O 2).
₍₂ plasma etc.), and in general, wet cleaning is frequently applied because of its good balance of versatility and economy. The problem of wet cleaning is that foreign matter removed from the wafer by cleaning is reattached to the wafer, and in particular foreign matter attached to the back surface of the wafer becomes a significant source of contamination. Also,
Since wet cleaning requires a drying process, the problem of wafer contamination during the drying process also exists.

As a cleaning method for compensating the disadvantages of wet cleaning, dry cleaning methods (UV ozone, O ₂ plasma, etc.) are being advanced, and advantages such as reduction of redeposition of foreign matters and omission of a drying step are utilized. However, it has been found that dry cleaning does not show a sufficient ability to remove foreign substances and is not suitable for removing a large amount of contaminants.

As another attempt, JP-A-48-35771
JP-A-53-92665, JP-A 1-1
Japanese Patent No. 35574 discloses a method of using an adhesive tape to adsorb foreign matter adhering to the surface of a semiconductor wafer onto the adhesive layer surface of the tape to remove it. Since this method can be said to be a kind of dry cleaning, it is possible to avoid the problem of reattachment of foreign matter in the wet cleaning and the problem of contamination in the drying process, and moreover to other dry cleaning such as UV ozone and O ₂ plasma. In comparison, it is expected that the ability to remove foreign matter will be further enhanced.

[0007]

However, if an adhesive tape having a high adhesive force that is easily plastically deformed is used,
There is a problem of contamination of the wafer surface due to workability and adhesive residue during the peeling operation, and conversely, if a hard and low adhesive force is used, it is difficult to sufficiently adsorb foreign matter adhering to the semiconductor wafer to the adhesive layer surface. I got it.

In view of the above-mentioned circumstances, the present invention uses a specific adhesive tape to prevent foreign matter from adhering to a semiconductor wafer during a peeling operation without causing workability and contamination of the wafer surface due to adhesive residue. Is intended to be removed at a high removal rate.

[0009]

Means for Solving the Problems The inventors of the present invention have made earnest studies on the above-mentioned object, and as a result, as a pressure-sensitive adhesive tape, a type which is cured by supplying an active energy source, and By using a pressure-sensitive adhesive layer whose volumetric shrinkage rate after curing by the active energy source is within a certain range, foreign substances adhering to the semiconductor wafer can be adsorbed well on the surface of the pressure-sensitive adhesive layer during the sticking operation to the semiconductor wafer. It can be held, and during the peeling operation, if an active energy source is supplied and curing treatment is performed, its adhesive force is reduced, the peeling operation is facilitated, and there is no problem of wafer contamination due to adhesive residue. The present invention has been completed by discovering that foreign matter attached to a semiconductor wafer can be easily adsorbed and removed at a high removal rate without causing problems of workability and wafer contamination.

That is, the present invention is characterized in that on the support film,
A pressure-sensitive adhesive layer containing a base polymer and a polymerizable compound and having a property of being cured by an active energy source and having a three-dimensional network structure by a molecular structure is provided, and the active energy source of this pressure-sensitive adhesive layer is used. Volume shrinkage after curing is 3-1
The present invention relates to an adhesive tape for removing foreign matter attached to a semiconductor wafer, which is characterized by 0%.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an example of a foreign matter removing adhesive tape of the present invention. 1 is adhesive tape,
An adhesive layer 12 is provided on a support film 11, and a separator 13 is superposed on the adhesive layer 12.

The support film 11 may be any one as long as it has a property of sufficiently transmitting the active energy source,
For example, the thickness of plastics such as polyester, polycarbonate, polyvinyl chloride, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, polyethylene, polypropylene, ethylene-propylene copolymer is usually A film having a thickness of 10 to 1,000 μm is used.

The adhesive layer 12 is made of acrylic resin, silicone.
Various polymers such as silicone resin, fluorine resin, rubber (natural rubber, synthetic rubber) are used as base polymers, and a polymerizable compound and, if necessary, a polymerization initiator are contained in the base polymer. It has a force, that is, a pressure-sensitive adhesive property, and has the property of being cured by the supply of an active energy source so that the molecular structure becomes a three-dimensional network. The base polymer may have a carbon-carbon double bond in its molecule. The above-mentioned active energy source is, for example, an electromagnetic wave typified by ultraviolet rays, infrared rays (heat), electron beams, and X-rays, or an elastic wave typified by ultrasonic waves.

In the present invention, the pressure-sensitive adhesive layer 12 has a volumetric shrinkage ratio of 3 after being cured by an active energy source.
It is characterized in that it is set in the range of -10%, preferably 4-8%. According to this, when peeling operation is performed after supplying the active energy source and curing, in addition to the smooth peeling work, almost no adhesive residue is seen, and the foreign matter on the wafer is substantially removed. It becomes possible to remove at a rate. On the other hand, when the volumetric shrinkage ratio is less than 3% or exceeds 10%, the amount of adhesive residue increases and the foreign matter removal ratio greatly decreases.

The method of setting the volumetric shrinkage ratio after curing with an active energy source is not particularly limited, but as an example, depending on the type of base polymer, the type of polymerizable compound used in combination therewith And the method of adjusting the amount used. As the polymerizable compound, two or more carbon-carbon double bonds involved in the curing reaction in the molecule,
Preferably, 3 to 6 polymerizable monomers or oligomers having a molecular weight of usually 10,000 or less are preferably used.

Examples of such polymerizable monomers or oligomers include tetramethyl methane tetraacryle
Pentaerythritol triacrylate, pentaerythritol pentaacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butanedio-
Ludia acrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, urethane acrylate, epoxy acrylate and the like can be mentioned.
These polymerizable monomers or oligomers may be used alone or in combination of two or more. The amount used can be appropriately selected within the range of 100 to 200 parts by weight with respect to 100 parts by weight of the base polymer.

The polymerization initiator is capable of generating radicals by supplying an active energy source.
It is appropriately selected and used depending on the type of source. For example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-Hydroxymethylphenylpropane, benzoyl peroxide, azobisisobutyronitrile or the like is used.

Even if these polymerization initiators are one kind,
Two or more kinds may be used in combination. The amount used is 0.1 to 100 parts by weight of the polymerizable monomer or oligomer.
It is preferably in the range of 20 parts by weight. If necessary, an amine compound such as triethylamine, tetraethylpentamine, dimethylaminoethanol or the like may be used together with this polymerization initiator as a polymerization accelerator.

A pressure-sensitive adhesive layer 12 having such a composition
The adhesive composition containing the above-mentioned base polymer and polymerizable monomer or oligomer and optionally a polymerization initiator is applied on the support film 11 and then crosslinked by heating or the like. It can be formed by sticking the pressure-sensitive adhesive layer formed on the separator 13 by the same method as described above on the support film 11. The thickness of the pressure-sensitive adhesive layer 12 may be appropriately determined, but is usually 5 to 100.
It may be μm.

The above-mentioned cross-linking treatment is carried out if necessary. For example, in the case of an acrylic resin adhesive, an acrylic resin having a cross-linkable functional group in its molecule is used as a base polymer, A cross-linking agent composed of a polyfunctional compound having a functional group capable of reacting with this functional group, such as a polyisocyanate compound or a polyepoxy compound, may be preliminarily blended in the pressure-sensitive adhesive composition.

The adhesive force of the adhesive layer 12 thus formed is usually 180 ° peeling adhesive force to a silicon wafer (normal temperature, peeling speed 300 mm / min) measured according to JIS Z-0237. 500g or more / 2
The width is 0 mm, preferably 700 to 2,000 g / 20 mm. Further, after the active energy source is supplied and cured, the above 180 degree peeling adhesive force (at room temperature, peeling speed 3
(00 mm / min) is usually 500 g or less / 20 mm width, preferably 1-100 g / 20 mm width.

The separator 13 is for protecting the surface of the pressure-sensitive adhesive layer 12 until it is attached to a semiconductor wafer in order to prevent contamination during storage or distribution of the pressure-sensitive adhesive tape 1. Then, it is peeled and removed at the time of using the above-mentioned pasting. The separator 13 is usually a flexible thin sheet made of paper (dust-free paper), plastic film, metal foil or the like, and if necessary, surface-treated with a release agent to impart releasability.

In the present invention, in order to remove foreign matters attached to a semiconductor wafer by using the adhesive tape having the above structure,
First, as shown in FIG. 2, the adhesive tape 1 is attached to the entire surface 2a and / or the back surface 2b of the semiconductor wafer 2 so that the adhesive layer surface is sufficiently adapted to the foreign matter 3 on the wafer. This may be done by any method such as pressing with a hand roller and then leaving it for several minutes. Here, since the adhesive layer 12 has plastic deformability and has the large adhesive force, the foreign matter 3 on the wafer is effectively adsorbed and held at the time of the above-mentioned attaching operation.

After sticking in this way, the adhesive tape 1
A peeling operation of peeling off from the end of the tape 1 is performed. Prior to this peeling operation, an active energy source such as ultraviolet rays is supplied from the support film 11 side of the tape 1. As a result, the pressure-sensitive adhesive layer 12 is hardened and the molecular structure is three-dimensionally reticulated. As a result, the pressure-sensitive adhesive layer 12 becomes hard and exhibits a low pressure-sensitive adhesive force, and its volume shrinks within a certain range as described above. When the above peeling operation is performed in such a state, peeling can be performed smoothly, and adhesive residue on the wafer surface is hardly seen at that time. In addition, foreign matter on the wafer 2 is strongly and surely adsorbed on the surface of the pressure-sensitive adhesive layer 12 by the above-mentioned curing.

By this method, foreign matter on the semiconductor wafer 2 can be adsorbed and removed at a high removal rate as compared with the conventional dry cleaning, as well as the wet cleaning and the method using the already proposed adhesive tape. It is possible to obtain a high removal rate that can remove foreign matter having a size of 0.2 μm or more by 80% or more.

By cleaning and removing the foreign matter on the semiconductor wafer at a high removal rate in this way, the occurrence of circuit disconnection, shots and exposure defects during circuit formation is reduced, and the yield of semiconductor devices finally manufactured is reduced. And reliability is greatly improved. Further, from the standpoint of global environment conservation, by replacing the conventional wet cleaning and dry cleaning methods that consume large amounts of pure water, chemicals, air, electric power, etc. with the method of the present invention, It can also contribute significantly to conservation.

[0027]

According to the adhesive tape for removing foreign matter of the present invention, the foreign matter adhering to the semiconductor wafer can be easily removed at a high removal rate, and at the same time, the contamination and residual problems due to the adhesive residue on the semiconductor wafer can occur. It is possible to greatly contribute to the improvement of the yield and reliability of the semiconductor device without causing any damage. Further, compared to other conventional cleaning methods, a contribution effect in terms of global environment conservation can be obtained.

[0028]

EXAMPLES Next, examples of the present invention will be described to more specifically describe. In the following, "parts" means "parts by weight".

Example 1 80 parts of n-butyl acrylate, 15 parts of acrylonitrile and 5 parts of acrylic acid were copolymerized in ethyl acetate by a conventional method to obtain an acrylic copolymer having a number average molecular weight of 1,000,000. To 100 parts of this copolymer, 3 parts of a cross-linking agent composed of a polyisocyanate compound, and 100 parts of dipentaerythritol hydroxypentaacrylate as a polymerizable oligomer.
Parts, and 5 parts of α-hydroxycyclohexylphenyl ketone as a photopolymerization initiator were added to prepare a solution of an acrylic pressure-sensitive adhesive.

On the corona-treated surface of a polyester support film having a thickness of 50 μm, the above-mentioned acrylic adhesive solution was applied and heat-crosslinked for 5 minutes at 120 ° C.
An adhesive tape having m adhesive layers was prepared. Adhesive strength to silicon wafer (mirror surface) is JIS Z-0
180 degree peeling adhesion measured according to 237 (normal temperature, peeling speed 300 mm / min) is 1,005 g / 20
The width was mm. Also, ultraviolet rays (wavelength 365 nm, 1,000 mJ / cm ² ) are irradiated as an active energy source from the back side of the adhesive tape, that is, the support film side.
Similarly, the adhesive strength was measured and found to be 7 g / 20 mm width.

A solution of the above-mentioned acrylic pressure-sensitive adhesive was applied to the treated surface of the polyester film having a thickness of 50 μm and subjected to a peeling treatment to form a pressure-sensitive adhesive layer having a thickness of 20 μm. The pressure-sensitive adhesive layer and the peeled polyester film were separated, and the specific gravity of the pressure-sensitive adhesive layer was measured. In addition, ultraviolet rays (wavelength: 3
After irradiation with 65 nm and 1,000 mJ / cm ² ), the specific gravity was similarly measured. The volume shrinkage of the pressure-sensitive adhesive layer was calculated from the change in specific gravity before and after irradiation with ultraviolet rays, and the volume shrinkage was 3.3%.

A 5-inch silicon wafer with no foreign matter having a size of 0.2 μm or more (a mirror without a circuit pattern)
A wafer is passed through a predetermined process (ion implantation process) to adhere foreign matter, and adhered to the mirror surface using a laser surface inspection device [LS-5000 manufactured by Hitachi Electronics Engineering Co., Ltd.]. The number of foreign matters having a size of 0.2 μm or more was counted. In addition, in order to count the foreign matters adhering to the front and back of the wafer, the same inspection was performed in two cases in which the mirror surfaces were reversed.

As a foreign matter cleaning test, the adhesive tape produced by the above method was applied to the mirror surface of the silicon wafer on which the foreign matter had been adhered as described above by a hand roller (rubber elastic roller).
La) was applied and left for 3 minutes. Then, from the back side of the adhesive tape, ultraviolet rays (wavelength 365 nm, 1.00
After irradiation with 0 mJ / cm ² ) the adhesive tape was peeled off and washed. After this cleaning, the number of foreign matters having a size of 0.2 μm or more attached to the mirror surface was counted again using the laser surface inspection device. The foreign matter removal rates on the front and back surfaces of the silicon wafer were calculated from the number of foreign matter after cleaning by the attaching and peeling operations and the number of foreign matter before cleaning.

Separately from this, as a contamination test with an adhesive, a 5 inch silicon wafer with no foreign matter having a size of 0.2 μm or more (a mirror wafer without a circuit pattern)
The adhesive tape prepared by the above-mentioned method was attached to the mirror surface of No. 1 using a hand roller, and left for 3 minutes. After that, ultraviolet rays (wavelength 365 nm, from the back side of the adhesive tape,
After irradiating with 1,000 mJ / cm ² ), the adhesive tape was peeled off. After this operation, the number of foreign matters having a size of 0.2 μm or more adhering to the mirror surface was counted by using a laser surface inspecting apparatus, and the contamination state due to the adhesion of the adhesive was examined.

In the above-mentioned foreign matter cleaning test (measurement of foreign matter removal rate) and adhesive contamination test (measurement of the number of foreign matter adhered), a series of work is carried out in a class 10 clean room (temperature 23 ° C., The humidity was 60%). The results of these tests are as shown in Table 1 below.

Example 2 A solution of an acrylic pressure-sensitive adhesive was prepared in the same manner as in Example 1 except that the compounding amount of the polymerizable oligomer was changed to 120 parts, and this was used in the same manner as in Example 1. , Thickness 20μ
An adhesive tape having m adhesive layers was prepared. Using this adhesive tape, a foreign matter cleaning test (measurement of foreign matter removal rate) and an adhesive contamination test (measurement of the number of adhered foreign matter) were performed in the same manner as in Example 1. The results of these tests are as shown in Table 1 below.

The adhesive strength of this adhesive tape to a silicon wafer (mirror surface) is JIS Z-0237.
180 degree peeling adhesive strength (normal temperature,
The peeling speed was 300 mm / min) and the width was 1,100 g / 20 mm. Also, from the back side of the adhesive tape, the active energy
As a source, ultraviolet rays (wavelength 365 nm, 1,000 mJ /
cm ² ) was irradiated and the adhesive strength was measured in the same manner, 6 g
The width was / 20 mm. Furthermore, when the volumetric shrinkage rate of the pressure-sensitive adhesive layer after ultraviolet irradiation was calculated in the same manner as in Example 1, the volumetric shrinkage rate was 5.5%.

Example 3 A solution of an acrylic pressure-sensitive adhesive was prepared in the same manner as in Example 1 except that the compounding amount of the polymerizable oligomer was changed to 140 parts, and this was used in the same manner as in Example 1. , Thickness 20μ
An adhesive tape having m adhesive layers was prepared. Using this adhesive tape, a foreign matter cleaning test (measurement of foreign matter removal rate) and an adhesive contamination test (measurement of the number of adhered foreign matter) were performed in the same manner as in Example 1. The results of these tests are as shown in Table 1 below.

The adhesive strength of this adhesive tape to a silicon wafer (mirror surface) is JIS Z-0237.
180 degree peeling adhesive strength (normal temperature,
The peeling speed was 300 mm / min) and the width was 1,155 g / 20 mm. Also, from the back side of the adhesive tape, the active energy
As a source, ultraviolet rays (wavelength 365 nm, 1,000 mJ /
cm ² ), and measuring the adhesive strength in the same way, 4g
The width was / 20 mm. Further, when the volumetric shrinkage rate of the pressure-sensitive adhesive layer after ultraviolet irradiation was calculated in the same manner as in Example 1, the volumetric shrinkage rate was 8.9%.

Comparative Example 1 Except that the compounding amount of the polymerizable oligomer was changed to 80 parts,
A solution of the acrylic pressure-sensitive adhesive was prepared in the same manner as in Example 1 and was used in the same manner as in Example 1 to give a thickness of 20 μm.
An adhesive tape having a pressure-sensitive adhesive layer was prepared. Using this adhesive tape, a foreign matter cleaning test (measurement of foreign matter removal rate) and an adhesive contamination test (measurement of the number of adhered foreign matter) were performed in the same manner as in Example 1. The test results were as shown in Table 2 below.

The adhesive strength of this adhesive tape to a silicon wafer (mirror surface) is JIS Z-0237.
180 degree peeling adhesive strength (normal temperature,
The peeling speed was 300 mm / min) and the width was 980 g / 20 mm. In addition, from the back side of the adhesive tape, ultraviolet rays (wavelength 365 nm, 1,000 mJ / cm 2) are used as an active energy source.
² ) was irradiated and the adhesive strength was measured in the same manner.
The width was / 20 mm. Further, when the volumetric shrinkage rate of the pressure-sensitive adhesive layer after ultraviolet irradiation was calculated in the same manner as in Example 1, the volumetric shrinkage rate was 2.7%.

Comparative Example 2 Except that the compounding amount of the polymerizable oligomer was changed to 60 parts,
A solution of the acrylic pressure-sensitive adhesive was prepared in the same manner as in Example 1 and was used in the same manner as in Example 1 to give a thickness of 20 μm.
An adhesive tape having a pressure-sensitive adhesive layer was prepared. Using this adhesive tape, a foreign matter cleaning test (measurement of foreign matter removal rate) and an adhesive contamination test (measurement of the number of adhered foreign matter) were performed in the same manner as in Example 1. The test results were as shown in Table 2 below.

The adhesive force of this adhesive tape to a silicon wafer (mirror surface) is JIS Z-0237.
180 degree peeling adhesive strength (normal temperature,
The peeling speed was 300 mm / min) and the width was 955 g / 20 mm. In addition, from the back side of the adhesive tape, ultraviolet rays (wavelength 365 nm, 1,000 mJ / cm 2) are used as an active energy source.
^{When 2} ) was irradiated and the adhesive strength was measured in the same way, it was 12 g.
The width was / 20 mm. Furthermore, when the volumetric shrinkage rate of the pressure-sensitive adhesive layer after ultraviolet irradiation was calculated in the same manner as in Example 1, the volumetric shrinkage rate was 1.9%.

Comparative Example 3 An acrylic pressure-sensitive adhesive solution was prepared in the same manner as in Example 1 except that the compounding amount of the polymerizable oligomer was changed to 210 parts, and this was used in the same manner as in Example 1. , Thickness 20μ
An adhesive tape having m adhesive layers was prepared. Using this adhesive tape, a foreign matter cleaning test (measurement of foreign matter removal rate) and an adhesive contamination test (measurement of the number of adhered foreign matter) were performed in the same manner as in Example 1. The test results were as shown in Table 2 below.

The adhesive strength of this adhesive tape to a silicon wafer (mirror surface) is JIS Z-0237.
180 degree peeling adhesive strength (normal temperature,
The peeling speed was 300 mm / min) and the width was 1,200 g / 20 mm. Also, from the back side of the adhesive tape, the active energy
As a source, ultraviolet rays (wavelength 365 nm, 1,000 mJ /
cm ² ), and the adhesive strength was measured in the same way, 3 g
The width was / 20 mm. Furthermore, when the volumetric shrinkage rate of the pressure-sensitive adhesive layer after ultraviolet irradiation was calculated in the same manner as in Example 1, the volumetric shrinkage rate was 11.1%.

[0046]

[Table 1]

[0047]

[Table 2]

As is clear from the results of Table 1 above, according to the adhesive tapes of Examples 1 to 3 of the present invention, the front and back surfaces of the silicon wafer can be produced without causing the problem of wafer contamination by the adhesive. Approximately 85
It can be seen that it can be peeled off with a high removal rate of up to 90%.

Further, as is clear from the results of Table 2 above, the adhesive tapes of Comparative Examples 1 and 2 having a volumetric shrinkage ratio of less than 3% had a slightly large amount of adhesive residue during the peeling operation, and foreign matter was removed. You can see that the rate is low. Further, in the pressure-sensitive adhesive tape of Comparative Example 3 having a volume shrinkage ratio of more than 10%, cracks were generated in the pressure-sensitive adhesive layer during the peeling operation, and the hardened pressure-sensitive adhesive powder adhered to the wafer, resulting in an extremely large amount of adhesive residue. It can be seen that the foreign matter removal rate on the wafer surface side is extremely low due to this.

The adhesive tapes of Examples 1 to 3 and Comparative Example 2 of the present invention were applied to a semiconductor wafer manufacturing process including a cleaning step for removing foreign matter, and finally obtained semiconductor devices were manufactured. As a result of collecting the yields, it was found that the adhesive tapes of Examples 1 to 3 had a yield higher than that of the adhesive tape of Comparative Example 2 by about 7 to 10%.

[Brief description of drawings]

FIG. 1 is a sectional view showing an example of an adhesive tape for removing foreign matter of the present invention.

FIG. 2 is a cross-sectional view showing a method for removing foreign matter by using the foreign matter-removing adhesive tape of the present invention.

[Explanation of symbols]

 1 Adhesive tape 11 Supporting film 12 Adhesive layer 13 Separator 2 Silicon wafer 2a Silicon wafer front surface 2b Silicon wafer back surface 3 Foreign matter adhering to silicon wafer

Claims (1)

[Claims] 1. A pressure-sensitive adhesive layer containing a base polymer and a polymerizable compound, having a property of being cured by an active energy source and having a three-dimensional reticulation of a molecular structure, which is provided on a support film, and The adhesive tape for removing foreign matter adhering to a semiconductor wafer is characterized in that the volumetric shrinkage rate of the adhesive layer after curing with an active energy source is 3 to 10%.
Pu.