JP4439855B2 - Cleaning sheet and method for cleaning substrate processing apparatus using the same - Google Patents

Description

  The present invention relates to a cleaning sheet for cleaning a substrate processing apparatus and a method for cleaning a substrate processing apparatus using the same.

  In various substrate processing apparatuses that dislike foreign matters, such as manufacturing apparatuses and inspection apparatuses such as semiconductors, flat panel displays, and printed circuit boards, the respective transport systems and the substrate are transported while being physically contacted. At that time, if foreign matter adheres to the substrate or the transport system, subsequent substrates will be contaminated one after another. Therefore, it is necessary to periodically stop the device and perform the cleaning process. There was a problem that a lot of labor was required.

  In order to solve these problems, a method of transporting a substrate having an adhesive substance fixed as a cleaning member into a substrate processing apparatus and cleaning and removing foreign substances adhering to the apparatus (see Patent Document 1), A method of cleaning and removing foreign substances adhering to the back surface of a substrate by conveying a member has been proposed (see Patent Document 2). These proposed methods are effective methods for solving the above-described problems. In particular, the former method of transporting a substrate to which an adhesive substance is fixed is superior to the latter method in terms of removing foreign matters.

JP-A-10-154686 (pages 2 to 4) Japanese Patent Laid-Open No. 11-87458 (pages 2 to 3)

  Along with the miniaturization of semiconductor devices, adhesion of foreign matter not only on the wafer surface but also on the wafer back surface has become a problem. This is because foreign matters are transferred from the back surface of the wafer to the front surface of the wafer in the cleaning process, thereby reducing the product yield. At present, the wiring width of the semiconductor element is mainly 0.18 μm, and if a foreign substance having the same or larger size adheres, defects such as disconnection are likely to occur. In particular, foreign matter having a particle diameter of about 0.2 to 1.0 μm is a problem, but the proposed method is not sufficient as a method for removing these foreign matters.

  In light of such circumstances, the present invention provides a cleaning sheet capable of efficiently removing foreign matters having a particle diameter of about 0.2 to 1.0 μm adhering to the substrate processing apparatus, and a method for cleaning a substrate processing apparatus using the same. The purpose is to provide.

  As a result of intensive studies to achieve the above object, the inventors of the present invention controlled the surface shape of the cleaning sheet and positively increased the physical contact area with foreign matter, in particular from 0.2 to Knowing that a cleaning sheet capable of efficiently removing foreign substances having a particle size of about 1.0 μm can be obtained, the present invention has been completed.

That is, the present invention is a method for adhering and removing foreign matter having a particle diameter of 0.2 μm or more and less than 1 μm adhering to the inside of the substrate processing apparatus by contact with the foreign substance having a larger particle diameter. The present invention relates to a cleaning sheet having a cleaning layer having an average surface roughness Ra of 0.05 μm or less.

In particular, the present invention provides a cleaning sheet having the above-described configuration in which the cleaning layer has substantially no adhesive force, and a cleaning layer having the cleaning layer having an average surface roughness Ra of 0.05 μm or less on one side of the support. It is possible to provide a cleaning sheet having the above-described configuration in which an adhesive layer is provided directly or via a support on the back side of the sheet or cleaning layer.

  Moreover, this invention can provide the conveyance member with a cleaning function by which the cleaning sheet of each said structure is provided in the conveyance member via the adhesive layer. Furthermore, the present invention can provide a cleaning method for a substrate processing apparatus, which transports the transport member with a cleaning function described above into the substrate processing apparatus. In addition, the present invention can provide a substrate processing apparatus cleaned by the above-described cleaning method.

  In this specification, “average surface roughness Ra” and “maximum surface roughness Rmax” of the cleaning layer are measured with a stylus type surface roughness measuring device (“P-11” manufactured by Tencor) at the tip. Using a diamond stylus having a curvature of 2 μm, the measurement was performed by acquiring data at a needle pressing force of 5 mg, a measurement speed of 1 μm / second (measurement length of 100 μm), and a sampling period of 200 Hz. “Average surface roughness Ra” was calculated as a cut-off value of 25 to 80 μm.

  As described above, the present invention reduces the surface roughness of the cleaning layer and uses the cleaning sheet having an average surface roughness Ra of 0.05 μm or less. Foreign matter having a particle diameter of about 0.2 to 1.0 μm, which is likely to cause defects such as disconnection, can be efficiently removed, and the cleaning effect can be greatly improved.

  The cleaning layer in the present invention is preferably as smooth as possible, and the average surface roughness Ra is set to 0.05 μm or less, preferably 0.01 μm or less. The maximum surface roughness Rmax is preferably 0.5 μm or less. By setting such a surface roughness, as described below, there is a remarkable effect that foreign matters having a particle diameter of about 0.2 to 1.0 μm adhering to the substrate processing apparatus can be efficiently removed. Is done.

  Intermolecular force and electrostatic force can be considered as the adhesion mechanism of the foreign matter on the silicon wafer. When the wafer comes into contact with the foreign matter on the chuck table, if the wafer and the foreign matter come into close contact with each other, intermolecular force or electrostatic force (when static electricity has a different sign) works, and the foreign matter adheres to the wafer side. Therefore, in order to remove the foreign matter, the cleaning layer is brought into contact. At this time, if the surface roughness of the cleaning layer is set as described above, the physical contact area with the foreign matter is increased. Foreign matters having a particle diameter of about 2 to 1.0 μm can be effectively removed.

The material of the cleaning layer in the present invention is not particularly limited, but it is preferably composed of a resin layer polymerized and cured by an active energy source such as ultraviolet rays, radiation, or heat. This is because the above-mentioned polymerization and curing results in a three-dimensional network structure that is substantially non-adhesive and does not adhere strongly to the apparatus contact portion during conveyance, thereby obtaining a cleaning sheet that can be reliably conveyed through the substrate processing apparatus. Because it is.
As the above-mentioned polymerization-cured resin layer, for example, a pressure-sensitive adhesive polymer, a compound having at least one unsaturated double bond in the molecule (hereinafter referred to as a polymerizable unsaturated compound) and a polymerization initiator are necessary. And a curable resin composition containing a crosslinking agent by curing with an active energy source, particularly ultraviolet rays.

  Examples of the pressure-sensitive adhesive polymer include acrylic polymers having (meth) acrylic acid and / or (meth) acrylic acid ester as a main monomer. In synthesizing this acrylic polymer, a compound having two or more unsaturated double bonds in the molecule is used as a copolymerization monomer, or a compound having an unsaturated double bond in the molecule is functionalized in the synthesized acrylic polymer. An unsaturated double bond may be introduced into the molecule of the acrylic polymer, for example, by a chemical bond between the groups. By this introduction, the acrylic polymer itself can be involved in the polymerization curing reaction by the active energy source.

The polymerizable unsaturated compound is preferably a non-volatile and low molecular weight material having a weight average molecular weight of 10,000 or less, particularly 5,000 or less so that three-dimensional networking can be efficiently performed during curing. It is preferable to have a molecular weight of
Such polymerizable unsaturated compounds include phenoxy polyethylene glycol (meth) acrylate, ε-caprolactone (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, trimethylolpropane tri (meth). There are acrylates, dipentaerythritol hexa (meth) acrylates, urethane (meth) acrylates, epoxy (meth) acrylates, oligoester (meth) acrylates, etc., and one or more of these are used.

It does not specifically limit as a polymerization initiator, A well-known thing can be used.
For example, when heat is used as the active energy, thermal polymerization initiators such as benzoyl peroxide and azobisisobutyronitrile are used. When light is used, benzoyl, benzoin ethyl ether, cibenzyl, isopropyl benzoin ether, benzophenone, Photopolymerization of Larsketone chlorothioxanthone, dodecylthioxanthone, cymethylthioxanthone, acetophenone diethyl ketal, benzyldimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenylpropane, 2,2-dimethoxy-2-phenylacetophenone Initiators are mentioned.

  The cleaning layer described above has a 180-degree peeling adhesive force (measured according to JIS Z0237) of 0.2 N / 10 mm width or less, preferably about 0.01 to 0.1 N / 10 mm width to the silicon wafer (mirror surface). There should be. By making such low or non-adhesive, it does not adhere to the contacted part in the apparatus during transportation, and there is no fear of causing a transportation trouble. Further, the thickness of the cleaning layer is not particularly limited, but is usually about 5 to 100 μm.

  In order to set the cleaning layer having the above-described surface roughness, for example, the above-mentioned curable resin composition is applied to a mirror surface of a silicon wafer as a mold, dried, and then cured by polymerization. Thus, a cleaning layer having an average surface roughness Ra of 0.05 μm or less, preferably 0.01 μm or less can be formed. Further, the average surface roughness Ra can be arbitrarily controlled by appropriately alkali-etching the mirror surface.

  In the present invention, the cleaning sheet may be composed of the above-described cleaning layer alone, or a support may be used, and the above-described cleaning layer may be provided on one side of the support. Further, when these cleaning sheets are transported into the substrate processing apparatus, the cleaning sheets are usually transported by being attached to a transport member such as a silicon wafer. For this reason, it is desirable to provide an adhesive layer directly or via a support on the back side of the cleaning layer in order to facilitate attachment to the transport member.

The support is not particularly limited. Polyolefin films such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, ethylene / vinyl acetate copolymer, ionomer resin, ethylene Examples of the plastic film include a (meth) acrylic acid copolymer, an ethylene / (meth) acrylic acid ester copolymer, polystyrene, and polycarbonate.
These supports may be used alone or in combination of two or more thereof, or may be one or both surfaces subjected to surface treatment such as corona treatment. The thickness of the support is usually about 10 to 100 μm.

  The pressure-sensitive adhesive layer provided directly on the back side of the cleaning layer or via a support has a 180-degree peeling adhesive strength to the silicon wafer (mirror surface) of 0.01 to 10 N / 10 mm width, preferably 0.05 to It should be 5N / 10mm wide. If the adhesive force is too high, the support may be torn when the cleaning sheet is peeled off from the conveying member such as a substrate. The thickness of the pressure-sensitive adhesive layer is not particularly limited, but is usually 5 to 100 μm, preferably about 10 to 50 μm.

  Such a pressure-sensitive adhesive layer is not particularly limited in terms of its material structure, and any ordinary pressure-sensitive adhesive such as acrylic or rubber can be used. Among them, as the acrylic pressure-sensitive adhesive, those mainly composed of an acrylic polymer having a weight average molecular weight of 100,000 or less and a component of 10% by weight or less are particularly preferably used. The above-mentioned acrylic polymer can be synthesized by polymerizing a monomer mixture in which (meth) acrylic acid alkyl ester is used as a main monomer and another monomer copolymerizable as necessary is added thereto.

A protective film is preferably bonded to the cleaning layer and the pressure-sensitive adhesive layer in order to protect the surface until the cleaning sheet is used.
There is no limitation in particular in this protective film. For example, polyolefins such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, and vinyl chloride that have been stripped with silicone-based, long-chain alkyl-based, fluorine-based, fatty acid amide-based, and silica-based release agents. Copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, ethylene / vinyl acetate copolymer, ionomer resin, ethylene / (meth) acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, polycarbonate A plastic film made up of Moreover, since the film which consists of polyolefins, such as polyethylene and a polypropylene, has releasability even if it does not carry out a peeling process, it can be used as a protective film alone. The thickness of such a protective film is usually 10 to 100 μm.

  In the present invention, as described above, when the cleaning sheet is conveyed into the substrate processing apparatus, it is usually preferable to provide the cleaning sheet as a conveying member with a cleaning function by providing the cleaning sheet on the conveying member via the adhesive layer. . The transport member used here is not particularly limited, and various types of substrates are used depending on the substrate processing apparatus that is a target for removing foreign matter. Specific examples include substrates for flat panel displays such as semiconductor wafers, LCDs, and PDPs, and other compact disks and MR heads.

  In the present invention, the conveyance member with the cleaning function is conveyed into the substrate processing apparatus and moved to contact with the site to be cleaned in the apparatus, thereby causing a trouble in conveying the foreign matter adhering to the apparatus. Easily and reliably remove the cleaning. In particular, as the conveying member, a particle having a particle size of about 0.2 to 1 μm is obtained by using a bonded cleaning sheet in which the average surface roughness Ra of the cleaning layer is regulated to a specific value or less. It is possible to effectively remove and remove foreign matters.

  In the present invention, the substrate processing apparatus to be cleaned is not particularly limited. For example, various types such as an exposure apparatus, a resist coating apparatus, a developing apparatus, an ashing apparatus, a dry etching apparatus, an ion implantation apparatus, a PVD apparatus, and a CVD apparatus. Manufacturing equipment and inspection equipment. In the present invention, each of the substrate processing apparatuses cleaned by the cleaning method can be provided.

Next, examples of the present invention will be described in more detail.
However, the present invention is not limited only to the following examples. In the following, “parts” means parts by weight.

In the following examples, for the evaluation of the cleaning sheet, a conveyance member with a cleaning function provided with this sheet on the conveyance member is used as a patterned wafer foreign matter inspection apparatus for semiconductor manufacturing (“IS2500” manufactured by Hitachi DECO) 3 Using a table (apparatus A, apparatus B, apparatus C), the number of foreign substances adhering to the silicon wafer mirror surface before and after the conveyance of the above members was measured and evaluated with a laser scattering type foreign substance inspection apparatus (manufactured by Hitachi DECO, LS6500).
Said inspection apparatus can measure the number of foreign materials according to each size by a program. The principle of the program is that the size corresponding to the scattering intensity of the standard particles (polystyrene) is obtained instead of directly measuring the foreign substance size. The foreign substance size can be classified into four types, 0.2 μm or more and less than 1 μm, 1 μm or more and less than 2 μm, 2 μm or more and less than 3 μm, or 3 μm or more.

In this example, cleaning evaluation was performed using apparatus A (foreign particle inspection apparatus).
Example 1
Polyethylene glycol 200 dimethacrylate (Shin Nakamura Chemical Co., Ltd.) was added to 100 parts of an acrylic polymer (weight average molecular weight 700,000) obtained from a monomer mixture consisting of 75 parts of 2-ethylhexyl acrylate, 20 parts of methyl acrylate and 5 parts of acrylic acid. 200 parts of a product name “NK ester 4G” manufactured by the company, 3 parts of a polyisocyanate compound (trade name “Coronate L” manufactured by Nippon Polyurethane Industry Co., Ltd.), and benzyldimethyl ketal (manufactured by Ciba Specialty Chemicals) as a photopolymerization initiator 3 parts of a trade name “Irgacure 651”) were uniformly mixed to prepare an ultraviolet curable resin composition.

Next, this ultraviolet curable resin composition was applied to the mirror surface (average surface roughness Ra: 0.002 μm) of the silicon wafer using a spin coater so that the thickness after drying was 15 μm. After evaporating the solvent in a dryer, a polyester film having a thickness of 25 μm was pasted thereon as a support. Thereafter, an ultraviolet ray having a central wavelength of 365 nm was irradiated with an integrated light amount of 1,000 mJ / cm ² to produce a laminated sheet having a cleaning layer composed of a resin layer polymerized and cured on a silicon wafer and a support thereon.

  Separately, in a 500 ml three-necked flask reactor equipped with a thermometer, stirrer, nitrogen inlet tube and reflux condenser, 73 parts of 2-ethylhexyl acrylate, n-butyl acrylate A monomer mixture consisting of 10 parts, 15 parts of N, N-dimethylacrylamide and 5 parts of acrylic acid, 0.15 part of 2,2'-azobisisobutyronitrile as a polymerization initiator and 100 parts of ethyl acetate, totaling 200 g Then, the mixture was stirred while introducing nitrogen gas for about 1 hour, and the air inside was replaced with nitrogen. Thereafter, the internal temperature was set to 58 ° C., and the polymerization was carried out in this state for about 4 hours to obtain an adhesive polymer solution. To 100 parts of this pressure-sensitive adhesive polymer solution, 3 parts of a polyisocyanate compound (trade name “Coronate L” manufactured by Nippon Polyurethane Industry Co., Ltd.) was uniformly mixed to prepare a pressure-sensitive adhesive solution.

  This pressure-sensitive adhesive solution was applied on a silicon-treated protective film so that the thickness after drying was 15 μm, and the solvent was evaporated to form a pressure-sensitive adhesive layer. After sticking this pressure-sensitive adhesive layer surface on the support of the laminated sheet produced by the above method, the laminated product was peeled off from the silicon wafer, and a protective film similar to the above was stuck to the exposed cleaning layer. As a result, a cleaning sheet A having a three-layer structure of cleaning layer / support / adhesive layer and having protective films on both surfaces thereof was produced.

  The protective film on the cleaning layer side of the cleaning sheet A was peeled off, and the 180 ° peel adhesive strength (measured according to JIS Z0237) on the silicon wafer (mirror surface) was measured to be 0.06 N / 10 mm. The tensile strength of the cleaning layer was 440 Mpa. Here, the tensile strength is measured according to the test method JIS K7127.

  Next, the protective film on the pressure-sensitive adhesive layer side of the cleaning sheet A was peeled off and attached to the mirror surface of an 8-inch silicon wafer with a hand roller to prepare a conveying member A with a cleaning function. This conveying member A with a cleaning function had an average surface roughness Ra of the cleaning layer of 0.005 μm. This conveyance member A with a cleaning function was evaluated for cleaning as follows.

First, the number of foreign matters having a size of 0.2 μm or more on the surface of a new 8-inch silicon wafer mirror was measured by a laser scattering type foreign matter inspection apparatus.
After transporting this new silicon wafer to the device A (foreign particle inspection device) with the mirror surface facing downward, the number of foreign particles of 0.2 μm or more was measured by the laser scattering type particle measuring device. 9,948 in the range of 0.2 μm or more and less than 1 μm, 6,584 in the range of 1 μm or more and less than 2 μm, 2,781 in the range of 2 μm or more and less than 3 μm, 1,470 in the range of 3 μm or more, The total number was 20,783 (number of foreign matter 1).

Next, when the transport member A with the cleaning function was transported to the device A on which the 20,783 foreign substances were adhered, the transport was possible without any problem.
After that, a new 8-inch silicon wafer was transported with the mirror surface facing downward, and again a foreign matter of 0.2 μm or more was measured with a laser scattering type foreign matter measuring apparatus. 1,254 in the range of less than 1, 1534 in the range of 1 μm or more and less than 2 μm, 798 in the range of 2 μm or more and less than 3 μm, 587 in the range of 3 μm or more, and 4,173 in total (number of foreign substances 2).

The foreign matter removal rate calculated from the number of foreign matter 2 and the number of foreign matter 1 is 87% in the range of 0.2 μm or more and less than 1 μm, 77% in the range of 1 μm or more and less than 2 μm, and 77%, 2 μm or more and less than 3 μm. The range was 71%, the range of 3 μm or more was 60%, and the total was 80%.
In addition, said foreign material removal rate is calculated | required by the following formula.
Foreign matter removal rate = [1− (number of foreign matter 2) / (number of foreign matter 1)] × 100

In this example, cleaning evaluation was performed using apparatus B (foreign particle inspection apparatus).
Example 2
In producing a laminated sheet having a cleaning layer and a support thereon in Example 1, instead of a silicon wafer (mirror surface, average surface roughness Ra: 0.002 μm), a silicon wafer subjected to alkali etching (processing time) A cleaning sheet B and a conveying member B with a cleaning function were produced in the same manner as in Example 1 except that the average surface roughness Ra: 0.045 μm was used for 3 minutes. This conveying member B with a cleaning function had an average surface roughness Ra of the cleaning layer of 0.042 μm. This transport member B with a cleaning function was evaluated for cleaning as follows.

First, the number of foreign matters having a size of 0.2 μm or more on the surface of a new 8-inch silicon wafer mirror was measured by a laser scattering type foreign matter inspection apparatus.
After transporting this new silicon wafer to the device B (foreign particle inspection device) with the mirror surface facing downward, the number of foreign particles of 0.2 μm or more was measured with a laser scattering type particle measuring device. 10,456 in the range from 0.2 μm to less than 1 μm, 7,234 in the range from 1 μm to less than 2 μm, 2,485 in the range from 2 μm to less than 3 μm, 1,389 in the range from 3 μm to 3 μm, The total was 21,564 (number of foreign matter 1).

Next, when the transporting member B with the cleaning function was transported to the device B on which 21,564 foreign substances were adhered, it could be transported without any trouble.
After that, a new 8-inch silicon wafer was transported with the mirror surface facing downward, and again a foreign matter of 0.2 μm or more was measured with a laser scattering type foreign matter measuring apparatus. Less than 4,587, less than 1 μm and less than 2 μm, 2,787, more than 2 μm and less than 3 μm, 879, more than 3 μm and 478, and a total of 8,731 2).

  The foreign matter removal rate was calculated from the above foreign matter number 2 and the above foreign matter number 1 in the same manner as in Example 1. The result is 56% in the range of 0.2 μm or more and less than 1 μm, 61% in the range of 1 μm or more and less than 2 μm, 65% in the range of 2 μm or more and less than 3 μm, and 66% in the range of 3 μm or more. It was 60%.

In the following comparative examples, cleaning evaluation was performed using the apparatus C (foreign particle inspection apparatus).
Comparative Example 1
In producing a laminated sheet having a cleaning layer and a support thereon in Example 1, instead of a silicon wafer (mirror surface, average surface roughness Ra: 0.002 μm), a silicon wafer subjected to alkali etching (processing time) A cleaning sheet C and a conveying member C with a cleaning function were produced in the same manner as in Example 1 except that the average surface roughness Ra was 0.094 μm for 10 minutes. In this conveying member C with a cleaning function, the average surface roughness Ra of the cleaning layer was 0.091 μm. This conveyance member C with a cleaning function was subjected to cleaning evaluation as follows.

First, the number of foreign matters having a size of 0.2 μm or more on the surface of a new 8-inch silicon wafer mirror was measured by a laser scattering type foreign matter inspection apparatus.
After transporting this new silicon wafer to the device C (foreign matter inspection device) with the mirror surface facing downward, the number of foreign matters of 0.2 μm or more was measured with a laser scattering type foreign matter measuring device. 8,485 in the range of 0.2 μm to less than 1 μm, 7,472 in the range of 1 μm to less than 2 μm, 2,890 in the range of 2 μm to less than 3 μm, 1,602 in the range of 3 μm or more, The total number was 20,449 (number of foreign matter 1).

Next, when the transport member C with the cleaning function was transported to the apparatus C on which the 20,449 foreign substances were adhered, the transport could be performed without any trouble.
After that, a new 8-inch silicon wafer was transported with the mirror surface facing downward, and again a foreign matter of 0.2 μm or more was measured with a laser scattering type foreign matter measuring apparatus. 6,480 in the range of less than 1,4563 in the range of 1 μm or more and less than 2 μm, 1,426 in the range of 2 μm or more and less than 3 μm, 598 in the range of 3 μm or more, and 13,067 in total ( The number of foreign matters was 2).

  The foreign matter removal rate was calculated from the above foreign matter number 2 and the above foreign matter number 1 in the same manner as in Example 1. The result is 24% in the range of 0.2 μm or more and less than 1 μm, 39% in the range of 1 μm or more and less than 2 μm, 51% in the range of 2 μm or more and less than 3 μm, and 63% in the range of 3 μm or more. It was 36%. From this result, it can be seen that in this comparative example, the removal of foreign matters in the range of 0.2 to 3 μm, particularly in the range of 0.2 to 1 μm, is inferior, and the overall removal rate is greatly reduced.

The cleaning evaluation results of Examples 1 and 2 and Comparative Example 1 are collectively shown in the following Table 1 (number of foreign matter 1), Table 2 (number of foreign matter 2) and Table 3 (foreign matter removal rate).
In each table, “Y1” is a foreign material in the range of 0.2 μm or more and less than 1 μm, “Y2” is a foreign material in the range of 1 μm or more and less than 2 μm, “Y3” is a foreign material in the range of 2 μm or more and less than 3 μm, “Y4” Is a foreign matter in the range of 3 μm or more, and “To” is the whole foreign matter.

Table 1
┌────┬───────┬────────────────────────┐
│ │Cleaning layer│ Number of foreign matter 1 (pieces) │
│ │ average surface roughness ├────┬────┬────┬────┬────┤
│ │Ra (μm) │ Y1 │ Y2 │ Y3 │ Y4 │ To │
├────┼───────┼────┼────┼────┼┼────┼────┤
│Example 1 │ 0.005 │ 9,948 │ 6,584 │ 2,781 │ 1,470 │ 20,783 │
│Example 2│ 0.042 │ 10,456 │ 7,234 │ 2,485 │ 1,389 │ 21,564 │
├────┼───────┼────┼────┼────┼┼────┼────┤
│Comparative Example 1│ 0.091 │ 8,485 │ 7,472 │ 2,890 │ 1,602 │ 20,449 │
└────┴───────┴────┴────┴────┴┴────┴────┘

Table 2
┌────┬───────┬────────────────────────┐
│ │Cleaning layer│ Number of foreign objects 2 (pieces) │
│ │ average surface roughness ├────┬────┬────┬────┬────┤
│ │Ra (μm) │ Y1 │ Y2 │ Y3 │ Y4 │ To │
├────┼───────┼────┼────┼────┼┼────┼────┤
│Example 1 │ 0.005 │ 1,254 │ 1,534 │ 798 │ 587 │ 4,173 │
│Example 2│ 0.042 │ 4,587 │ 2,787 │ 879 │ 478 │ 8,731 │
├────┼───────┼────┼────┼────┼┼────┼────┤
│Comparative Example 1│ 0.091 │ 6,480 │ 4,563 │ 1,426 │ 598 │ 13,067 │
└────┴───────┴────┴────┴────┴┴────┴────┘

Table 3
┌────┬───────┬────────────────────────┐
│ │Cleaning layer│ Foreign matter removal rate (%) │
│ │ average surface roughness ├────┬────┬────┬────┬────┤
│ │Ra (μm) │ Y1 │ Y2 │ Y3 │ Y4 │ To │
├────┼───────┼────┼────┼────┼┼────┼────┤
│Example 1│ 0.005 │ 87 │ 77 │ 71 │ 60 │ 80 │
│Example 2│ 0.042 │ 56 │ 61 │ 65 │ 66 │ 60 │
├────┼───────┼────┼────┼────┼┼────┼────┤
│Comparative Example 1│ 0.091 │ 24 │ 39 │ 51 │ 63 │ 36 │
└────┴───────┴────┴────┴────┴┴────┴────┘

From the above results, as in the present invention, by setting the average surface roughness Ra of the cleaning layer to 0.05 μm or less, particularly 0.01 μm or less, foreign matter of about 0.2 to 1 μm adhering to the substrate processing apparatus. It can be seen that it is possible to provide a cleaning sheet and a cleaning method that can efficiently remove the particles and have a large foreign matter removing effect.

Claims (7)

A cleaning sheet for removing foreign matter having a particle diameter of 0.2 μm or more and less than 1 μm that is transported into a substrate processing apparatus and adhered to the apparatus together with foreign substances having a larger particle diameter by contact , A cleaning sheet comprising a cleaning layer having an average surface roughness Ra of 0.05 μm or less.

  The cleaning sheet according to claim 1, wherein the cleaning layer has substantially no adhesive force.   The cleaning sheet according to claim 1, wherein the cleaning sheet has a cleaning layer having an average surface roughness Ra of 0.05 μm or less on one side of the support.   The cleaning sheet according to any one of claims 1 to 3, wherein an adhesive layer is provided directly or via a support on the back side of the cleaning layer.   A conveyance member with a cleaning function, wherein the cleaning sheet according to claim 4 is provided on the conveyance member via an adhesive layer.   6. A method for cleaning a substrate processing apparatus, comprising transporting the transport member with a cleaning function according to claim 5 into the substrate processing apparatus. A substrate processing apparatus cleaned by the cleaning method according to claim 6.