JPH08199261A - Bonding wire - Google Patents
Bonding wireInfo
- Publication number
- JPH08199261A JPH08199261A JP757495A JP757495A JPH08199261A JP H08199261 A JPH08199261 A JP H08199261A JP 757495 A JP757495 A JP 757495A JP 757495 A JP757495 A JP 757495A JP H08199261 A JPH08199261 A JP H08199261A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- weight
- bonding wire
- wire
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01038—Strontium [Sr]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/011—Groups of the periodic table
- H01L2924/01105—Rare earth metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体素子のチップ電
極と外部リードとを接続するために使用されるボンディ
ングワイヤに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding wire used for connecting a chip electrode of a semiconductor element and an external lead.
【０００２】[0002]
【従来の技術】ＩＣ、ＬＳＩなどの半導体素子の電極
と、外部リードとを接続するために、一般に０．０１〜
０．１ｍｍの直径を有するボンディングワイヤが用いら
れている。2. Description of the Related Art Generally, in order to connect electrodes of semiconductor elements such as IC and LSI to external leads, 0.01 to
A bonding wire with a diameter of 0.1 mm is used.
【０００３】前記ワイヤのボンディングには、ボンディ
ング治具となるセラミック製キャピラリー、該キャピラ
リーを保持するための前後上下左右移動可能なヘッド、
コントローラ、及び、ボール形成のための電気トーチを
備えてなる超音波熱圧着式ワイヤボンダーが使用されて
いる。また、ボンディング方式には、ボンディングワイ
ヤの先端を溶解させてボール状にした後超音波振動を付
加しながら加熱することにより圧着するボールボンディ
ング方式と、超音波を付加しながら押圧してボンディン
グワイヤを圧着するウェッジボンディング方式がある。For the wire bonding, a ceramic capillary serving as a bonding jig, a head for holding the capillary, which is movable back and forth, up and down, and left and right,
An ultrasonic thermocompression bonded wire bonder is used which comprises a controller and an electric torch for ball formation. In addition, the bonding method includes a ball bonding method in which the tip of the bonding wire is melted into a ball shape and then pressure-bonded by heating while applying ultrasonic vibration, and a bonding wire that is pressed while applying ultrasonic waves to form the bonding wire. There is a wedge bonding method for crimping.
【０００４】前記ワイヤボンダーを用いて半導体素子上
の電極と外部リードとをボンディングワイヤで接続する
には、まずキャピラリーを半導体素子の電極上に移動さ
せて降下させ、ボールボンディング方式によりボンディ
ングワイヤを該電極に圧着せしめた後（第一ボンディン
グ）、キャピラリーを上昇させて外部リード上に移動さ
せて降下させ、該リードに前記ワイヤを圧着せしめ（第
二ボンディング）、続いてキャピラリーを上昇させてワ
イヤを切断するという方法により行われる。In order to connect the electrodes on the semiconductor element to the external leads with the bonding wires using the wire bonder, first, the capillary is moved onto the electrodes of the semiconductor element and lowered, and the bonding wires are bonded by the ball bonding method. After crimping to the electrode (first bonding), raise the capillary to move it onto the external lead and lower it, crimp the wire to the lead (second bonding), and then raise the capillary to remove the wire. It is performed by a method of cutting.
【０００５】近年、ワイヤボンダーは、ボンディング一
工程当たりの所要時間が０．２秒と極めて高速になって
おり、ボンディングワイヤには、 ｉ）第一ボンディングにおいて、ボンディングワイヤを
加熱して溶解したときに酸化被膜のない真球状のボール
が形成され、また該ワイヤと電極との接合状態が良好で
あること、 ii）第二ボンディングにおいて、ワイヤと外部リードと
の接合状態が良好であること、 iii)第一ボンディングと第二ボンディングとの間のワイ
ヤにカールやループ垂れなどのループ異常が発生しない
こと、 iv）ボンディング後の樹脂モールドの際、樹脂の流動に
よるワイヤの変形が起こりにくいこと、 ｖ）長期間保存しても両ボンディングの接合部が劣化し
ないこと、等の特性が要求される。In recent years, the wire bonder has been extremely fast, taking 0.2 seconds per bonding step. The bonding wire has the following properties: i) When the bonding wire is heated and melted in the first bonding. A spherical ball having no oxide film is formed on the wire, and the wire and the electrode are in good contact with each other, ii) In the second bonding, the wire and the external lead are in good contact with each other, iii ) No loop abnormality such as curling or loop sag occurs in the wire between the first bonding and the second bonding, iv) The wire is less likely to be deformed by the flow of resin during resin molding after bonding, v ) It is required that the bonding parts of both bondings do not deteriorate even after long-term storage.
【０００６】そこで、純度９９．９９％以上の金に、例
えばＣａ、Ｂｅ等の元素を０．０００１〜０．０１重量
％添加して硬度を高めた金合金線を使用すると、上記
ｉ）〜ｖ）の特性をある程度備えたボンディングワイヤ
が得られることから、通常純金線でなく金合金線が用い
られることが多い。Therefore, when a gold alloy wire in which elements such as Ca and Be are added in an amount of 0.0001 to 0.01% by weight to gold having a purity of 99.99% or more to increase the hardness is used, the above i) to Since a bonding wire having a certain degree of property v) can be obtained, a gold alloy wire is usually used instead of a pure gold wire.
【０００７】ところが近年、半導体デバイスの多ピン化
に伴いボンディングワイヤ間隔の狭ピッチ化及びボンデ
ィング距離の長距離化が進行してきており、そのまま従
来のボンディングワイヤを用いると、ワイヤループが垂
れたり、樹脂封入するときに樹脂の流動抵抗によりボン
ディングワイヤが変形し、ボンディングワイヤ同士が接
触したりする等の不具合が生じるため、添加元素の添加
量を増やす、添加元素の種類を増やす、等の手段を用い
てボンディングワイヤの強度を向上させる試みがなされ
ている。However, in recent years, as the number of pins of semiconductor devices has increased, the pitch of the bonding wires has become narrower and the bonding distance has become longer. If the conventional bonding wires are used as they are, wire loops may drop or resin Since the bonding wires are deformed by the flow resistance of the resin during encapsulation and the bonding wires come into contact with each other, problems such as increasing the additive amount of additive elements and increasing the types of additive elements are used. Attempts have been made to improve the strength of the bonding wire.
【０００８】しかしながら、単純に添加元素の添加量を
増やす、これまでタイプ別に添加していた元素を複合添
加する方法ではボンディングワイヤの強度は向上して
も、第一ボンディングにおいて加熱溶解して得られるボ
ールが硬すぎるため、半導体素子に亀裂を生じる、ボー
ル形状が真球にならない、真球に近くともボールを形成
する際に収縮孔を生じる、半導体素子上の電極にボンデ
ィングしたときにボールがいびつに変形し隣の電極に接
触する、収縮孔があるため電極との十分な接合強度が得
られない、ボンディング後のボールの潰れ形状がいびつ
なため異常ループを形成してしまい、樹脂封入するとき
に樹脂の流動抵抗によりボンディングワイヤ同士が接触
する、等の不具合が生じる。However, in the method of simply increasing the amount of the added element, that is, by adding the elements that have been added according to the type until now, even if the strength of the bonding wire is improved, it is obtained by heating and melting in the first bonding. The ball is too hard to crack the semiconductor element, the shape of the ball does not become a true sphere, a contraction hole occurs when forming a ball even if it is close to a true sphere, and the ball distorts when bonded to an electrode on a semiconductor element. When it is encapsulated with resin, it deforms into contact with the adjacent electrode, there is a contraction hole and sufficient bonding strength with the electrode cannot be obtained, and the crushed shape of the ball after bonding is distorted to form an abnormal loop. In addition, the flow resistance of the resin causes problems such as the bonding wires contacting each other.
【０００９】[0009]
【発明が解決しようとする課題】本発明の目的は、第一
ボンディングで接合したボンディングワイヤと半導体素
子上の電極との間に十分な接合強度をもち、半導体素子
を樹脂封入する際にボンディングワイヤ同士の接触によ
る不良が起こりにくく、リードフレームの狭ピッチ、半
導体素子上の電極の狭パッドピッチ、リードフレームと
半導体素子上の電極間の長ループ配線に適するボンディ
ングワイヤを得ることにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a sufficient bonding strength between the bonding wire bonded by the first bonding and the electrode on the semiconductor element, and to bond the bonding wire when the semiconductor element is sealed with resin. It is to obtain a bonding wire suitable for a narrow pitch of a lead frame, a narrow pad pitch of electrodes on a semiconductor element, and a long loop wiring between a lead frame and an electrode on a semiconductor element, because defects due to contact with each other hardly occur.
【００１０】[0010]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明のボンディングワイヤは、（１）純度９
９．９９重量％以上の高純度金にＣｕを０．１〜２重量
％、Ｐｄを０．０１〜１重量％含有させた点、（２）純
度９９．９９重量％以上の高純度金にＣｕを０．１〜２
重量％、Ｐｄを０．０１〜１重量％、Ｓｎを０．０００
１〜０．０１重量％含有させた点、（３）純度９９．９
９重量％以上の高純度金にＣｕを０．１〜２重量％、Ｐ
ｄを０．０１〜１重量％、Ｃａ、Ｂｅ、Ｇｅ、希土類元
素、Ｓｒ、Ｂａ、Ｉｎ及びＴｉの中から１種または２種
以上を０．０００１〜０．０１重量％含有させた点、
（４）純度９９．９９重量％以上の高純度金にＣｕを
０．１〜２重量％、Ｐｄを０．０１〜１重量％、Ｓｎを
０．０００１〜０．０１重量％、Ｃａ、Ｂｅ、Ｇｅ、希
土類元素、Ｓｒ、Ｂａ、Ｉｎ及びＴｉの中から１種また
は２種以上を０．０００１〜０．０１重量％含有させた
点に特徴がある。In order to achieve the above object, the bonding wire of the present invention comprises (1) a purity of 9
Cu containing 0.1 to 2 wt% Cu and 0.01 to 1 wt% Pd in high-purity gold of 9.99 wt% or more, (2) High-purity gold of 99.99 wt% or more in purity Cu 0.1-2
% By weight, 0.01 to 1% by weight of Pd, 0.000 of Sn
1 to 0.01% by weight, (3) Purity 99.9
Cu of 0.1 to 2% by weight in high purity gold of 9% by weight or more, P
0.01 to 1% by weight of d, 0.0001 to 0.01% by weight of one or two or more selected from Ca, Be, Ge, rare earth elements, Sr, Ba, In and Ti,
(4) 0.1 to 2% by weight of Cu, 0.01 to 1% by weight of Pd, 0.0001 to 0.01% by weight of Sn, and Ca, Be in high-purity gold having a purity of 99.99% by weight or more. , Ge, rare earth elements, Sr, Ba, In and Ti, and is characterized in that 0.0001 to 0.01 wt% of one or more of them is contained.
【００１１】[0011]
【作用】本発明のボンディングワイヤにおいて、Ａｕに
Ｃｕ及びＰｄを複合添加させた理由は、ＣｕとＰｄを複
合添加させると表面酸化が生じにくく、真球に近く表面
清浄なボールを得ることができ、このボールの結晶粒径
が微細なことにより、ボンディング後のボール潰れ形状
が真円に近く、また、Ｃｕ及びＰｄを従来より多く添加
することが可能なため従来よりも高く安定した接合強度
が得られ、ボンディングワイヤの直進性が向上する上、
高純度金よりも常温及び高温での引張り強度が向上した
ボンディングワイヤを提供することができるからであ
る。この効果は、Ｃｕを０．１重量％以上、Ｐｄを０．
０１重量％以上複合添加することにより現れ、Ｃｕを２
重量％、Ｐｄを１重量％を超えて含有させると、第一ボ
ンディングにおいてボンディングワイヤを加熱して溶解
したときに形成されるボール表面にしわを生じ、接合後
の引張り強度のばらつきが大きくなり、直進性に異常を
きたしたり、ボールが硬くなり過ぎてボンディング時に
半導体素子に亀裂を生じる場合があるので、Ｃｕを０．
１〜２重量％、Ｐｄを０．１〜１重量％含有する組成と
する必要がある。In the bonding wire of the present invention, the reason why Cu and Pd are added in combination with Au is that when Cu and Pd are added together, surface oxidation is less likely to occur and a ball with a clean surface close to a true sphere can be obtained. Since the crystal grain size of this ball is fine, the crushed shape of the ball after bonding is close to a perfect circle, and since Cu and Pd can be added in a larger amount than in the conventional case, the bonding strength is higher and stabler than in the conventional case. In addition to improving the straightness of the bonding wire,
This is because it is possible to provide a bonding wire having improved tensile strength at room temperature and high temperature as compared with high-purity gold. The effect is that Cu is 0.1% by weight or more and Pd is 0.
It appears by adding more than 01% by weight, and Cu
If the content of Pd and Pd exceeds 1% by weight, wrinkles occur on the surface of the ball formed when the bonding wire is heated and melted in the first bonding, resulting in large variations in tensile strength after bonding, Since the straightness may be abnormal, or the ball may become too hard to cause cracks in the semiconductor element during bonding, Cu may be reduced to 0.
It is necessary to have a composition containing 1 to 2% by weight and Pd of 0.1 to 1% by weight.
【００１２】また、ＡｕにＣｕ及びＰｄを含有させる他
に微量のＳｎを含有させる理由は、Ｃｕ及びＰｄとの相
乗効果により、ボールの形状及び性状を変化させること
なくボール硬度を減少させることにより、ボールの加工
硬度を低減させ半導体素子に与えるダメージを減少させ
るためである。Ｓｎの添加量を０．０００１〜０．０１
重量％としたのは、０．０００１重量％未満ではＣｕ及
びＰｄとの相乗効果が現れず、０．０１重量％を超える
と第一ボンディングにおいてボンディングワイヤを加熱
して溶解したときにボール真球度が得られず、収縮孔を
生じたりして接合強度の低下を生じる場合があるので、
Ｓｎの添加量を０．０００１〜０．０１重量％とするこ
とが好ましい。[0012] The reason why Au contains Cu and Pd in addition to a small amount of Sn is that the synergistic effect with Cu and Pd reduces the ball hardness without changing the shape and properties of the ball. This is to reduce the processing hardness of the balls and the damage given to the semiconductor element. The amount of Sn added is 0.0001 to 0.01
If the content is less than 0.0001% by weight, a synergistic effect with Cu and Pd does not appear, and if it exceeds 0.01% by weight, the ball has a spherical shape when the bonding wire is heated and melted in the first bonding. Since it may not be possible to obtain a sufficient degree of shrinkage, and it may cause shrinkage holes and decrease the joint strength.
The addition amount of Sn is preferably 0.0001 to 0.01% by weight.
【００１３】また、ＡｕにＣｕ及びＰｄを含有させる他
に微量のＣａ、Ｂｅ、Ｇｅ、希土類元素、Ｓｒ、Ｂａ、
Ｉｎ及びＴｉの中から１種または２種以上を含有させる
理由は、Ｃｕ及びＰｄとの相乗効果により直進性を更に
向上させる他、常温及び高温での引張り強度、及び接合
強度を更に向上させ、かつ、ネック切れを防止するため
である。Ｃａ、Ｂｅ、Ｇｅ、希土類元素、Ｓｒ、Ｂａ、
Ｉｎ及びＴｉの中から１種または２種以上の含有量の総
和を０．０００１〜０．０１重量％としたのは、０．０
００１重量％未満ではＣｕ及びＰｄとの相乗効果が現れ
ず、直進性、引張り強度及び接合強度を更に向上させる
ことができず、０．０１重量％を超えると第一ボンディ
ングにおいてボンディングワイヤを加熱して溶解したと
きにボール真球度が得られず、接合後の引張り強さのば
らつきが大きくなったり、ボンディングワイヤの硬度が
高くなりすぎ、半導体素子に亀裂を生じたり、ネック切
れを生じたり、直進性に異常をきたす場合があるので、
Ｃａ、Ｂｅ、Ｇｅ、希土類元素、Ｓｒ、Ｂａ、Ｉｎ及び
Ｔｉの中から１種または２種以上の含有量の総和を０．
０００１〜０．０１重量％とすることが好ましい。In addition to containing Cu and Pd in Au, trace amounts of Ca, Be, Ge, rare earth elements, Sr, Ba,
The reason for containing one or more of In and Ti is that the linearity is further improved by the synergistic effect with Cu and Pd, and the tensile strength at room temperature and high temperature and the bonding strength are further improved. In addition, it is to prevent the neck from breaking. Ca, Be, Ge, rare earth elements, Sr, Ba,
The sum of the contents of one or more of In and Ti is 0.0001 to 0.01% by weight is 0.0
If it is less than 001% by weight, the synergistic effect with Cu and Pd does not appear, and the straightness, tensile strength and bonding strength cannot be further improved. If it exceeds 0.01% by weight, the bonding wire is heated in the first bonding. Ball sphericity cannot be obtained when melted by melting, variation in tensile strength after joining becomes large, hardness of bonding wire becomes too high, cracks occur in semiconductor elements, neck breakage occurs, Since it may cause an abnormality in straightness,
The total content of one or more of Ca, Be, Ge, rare earth elements, Sr, Ba, In and Ti is 0.
It is preferably 0001 to 0.01% by weight.
【００１４】本発明により、第一ボンディングで接合し
たボンディングワイヤと半導体素子上の電極との間に十
分な接合強度をもち、半導体素子を樹脂封入する際にボ
ンディングワイヤ同士の接触による不良が起こりにく
く、リードフレームの狭ピッチ、半導体素子上の電極の
狭パッドピッチ、リードフレームと半導体素子上の電極
間の長ループ配線に適するボンディングワイヤが得られ
る。According to the present invention, there is sufficient bonding strength between the bonding wire bonded by the first bonding and the electrode on the semiconductor element, and when the semiconductor element is encapsulated with resin, defects due to contact between the bonding wires are unlikely to occur. A bonding wire suitable for a narrow pitch of the lead frame, a narrow pad pitch of the electrodes on the semiconductor element, and a long loop wiring between the lead frame and the electrodes on the semiconductor element can be obtained.
【００１５】[0015]
【実施例】純度９９．９９重量％異常の高純度金に、Ｃ
ｕ、Ｐｄ、Ｃａ、Ｂｅ、Ｇｅ、希土類元素、Ｓｒ、Ｂ
ａ、Ｉｎ、Ｓｎ及びＴｉを種々の割合で添加し、表１に
示す組成の金合金を溶解鋳造した。これらの鋳造品を圧
延及び線引き加工をすることで２０μｍφのボンディン
グワイヤを得た。次に、これらのワイヤを室温における
破断伸びが４％になるように熱処理し、ボンディングサ
ンプルを得た、これらのボンディングサンプルを第一ボ
ンディングする際に加熱溶解して得られるボールを採取
し、電子顕微鏡にて表面観察を行った。また、得られた
ボンディングワイヤを用いてボンディングを１０００回
行い、ループ異常の発生の有無、半導体素子の亀裂発生
の有無を調査した。更に、得られたボンディングワイヤ
の引張り試験を常温にて行った。以上の試験にて得られ
た結果を表２に示す。[Example] Purity 99.99% by weight Abnormally high purity gold, C
u, Pd, Ca, Be, Ge, rare earth element, Sr, B
A, In, Sn and Ti were added at various ratios, and a gold alloy having the composition shown in Table 1 was melt-cast. A 20 μmφ bonding wire was obtained by rolling and drawing these castings. Next, these wires were heat treated so that the breaking elongation at room temperature was 4% to obtain bonding samples. The balls obtained by heating and melting these bonding samples during the first bonding were sampled and The surface was observed with a microscope. Further, bonding was performed 1000 times using the obtained bonding wire, and presence / absence of occurrence of loop abnormality and presence / absence of occurrence of crack in semiconductor element were investigated. Further, the tensile test of the obtained bonding wire was conducted at room temperature. The results obtained in the above test are shown in Table 2.
【００１６】[0016]
【表１】 [Table 1]
【表２】 [Table 2]
【００１７】[0017]
【発明の効果】以上で明らかなように、本発明のボンデ
ィングワイヤは、従来例及び比較例のボンディングワイ
ヤに比べ直進性に優れており、従来例のボンディングワ
イヤに比べ破断強度も優れていることわかる。また、本
発明のボンディングワイヤは、第一ボンディング時に形
成されるボールに収縮孔は観察されず、このボール潰れ
形状は真円に近く、チップにクラックを生じない上、製
造時の引張り強度も強く、細線化が容易である。As is apparent from the above, the bonding wire of the present invention is superior to the bonding wires of the conventional example and the comparative example in straightness, and is superior in breaking strength to the bonding wire of the conventional example. Recognize. Further, in the bonding wire of the present invention, no contraction hole is observed in the ball formed during the first bonding, the collapsed shape of this ball is close to a perfect circle, the chip is not cracked, and the tensile strength during manufacturing is also strong. It is easy to make thin lines.
【００１８】従って、本発明によればリードフレームの
狭ピッチ、半導体素子上の電極の狭パッドピッチ、リー
ドフレームと半導体素子上の電極間の長ループ配線に適
するボンディングワイヤを提供する。また、本発明のボ
ンディングワイヤは、製造時の引張り強度が高いため、
十数μｍφ程度の極細線化も容易であり、かつこの極細
線を用いることによりＩＣを小型化することが可能であ
る。Therefore, according to the present invention, there is provided a bonding wire suitable for a narrow pitch of the lead frame, a narrow pad pitch of the electrodes on the semiconductor element, and a long loop wiring between the lead frame and the electrodes on the semiconductor element. Further, the bonding wire of the present invention has high tensile strength during production,
It is easy to make an ultrafine wire of about a dozen μmφ, and it is possible to downsize the IC by using this ultrafine wire.
Claims (4)
Ｃｕを０．１〜２重量％、Ｐｄを０．０１〜１重量％含
有させたことを特徴とするボンディングワイヤ。1. A bonding wire comprising 0.1 to 2% by weight of Cu and 0.01 to 1% by weight of Pd in high-purity gold having a purity of 99.99% by weight or more.
Ｃｕを０．１〜２重量％、Ｐｄを０．０１〜１重量％、
Ｓｎを０．０００１〜０．０１重量％含有させたことを
特徴とするボンディングワイヤ。2. High purity gold having a purity of 99.99% by weight or more, 0.1 to 2% by weight of Cu and 0.01 to 1% by weight of Pd,
A bonding wire containing 0.0001 to 0.01% by weight of Sn.
Ｃｕを０．１〜２重量％、Ｐｄを０．０１〜１重量％、
Ｃａ、Ｂｅ、Ｇｅ、希土類元素、Ｓｒ、Ｂａ、Ｉｎ及び
Ｔｉの中から１種または２種以上を０．０００１〜０．
０１重量％含有させたことを特徴とするボンディングワ
イヤ。3. High purity gold having a purity of 99.99% by weight or more, 0.1 to 2% by weight of Cu and 0.01 to 1% by weight of Pd,
One or more of Ca, Be, Ge, rare earth elements, Sr, Ba, In and Ti may be added in an amount of 0.0001-0.
A bonding wire containing 0.1% by weight.
Ｃｕを０．１〜２重量％、Ｐｄを０．０１〜１重量％、
Ｓｎを０．０００１〜０．０１重量％、Ｃａ、Ｂｅ、Ｇ
ｅ、希土類元素、Ｓｒ、Ｂａ、Ｉｎ及びＴｉの中から１
種または２種以上を０．０００１〜０．０１重量％含有
させたことを特徴とするボンディングワイヤ。4. High-purity gold having a purity of 99.99% by weight or more, 0.1 to 2% by weight of Cu and 0.01 to 1% by weight of Pd,
0.0001 to 0.01 wt% Sn, Ca, Be, G
1 out of e, rare earth element, Sr, Ba, In and Ti
A bonding wire containing 0.0001 to 0.01% by weight of one kind or two or more kinds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00757495A JP3586909B2 (en) | 1995-01-20 | 1995-01-20 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00757495A JP3586909B2 (en) | 1995-01-20 | 1995-01-20 | Bonding wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08199261A true JPH08199261A (en) | 1996-08-06 |
| JP3586909B2 JP3586909B2 (en) | 2004-11-10 |
Family
ID=11669587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00757495A Expired - Fee Related JP3586909B2 (en) | 1995-01-20 | 1995-01-20 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3586909B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19753055A1 (en) * | 1997-11-29 | 1999-06-10 | Heraeus Gmbh W C | Ultra-fine bonding wire of a gold alloy containing platinum and/or palladium |
| KR20200113192A (en) | 2018-01-30 | 2020-10-06 | 타츠타 전선 주식회사 | Bonding wire |
-
1995
- 1995-01-20 JP JP00757495A patent/JP3586909B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19753055A1 (en) * | 1997-11-29 | 1999-06-10 | Heraeus Gmbh W C | Ultra-fine bonding wire of a gold alloy containing platinum and/or palladium |
| DE19753055B4 (en) * | 1997-11-29 | 2005-09-15 | W.C. Heraeus Gmbh | Fine wire of a gold alloy, process for its preparation and its use |
| KR20200113192A (en) | 2018-01-30 | 2020-10-06 | 타츠타 전선 주식회사 | Bonding wire |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3586909B2 (en) | 2004-11-10 |
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