JPH08174746A - Transparent conductive film - Google Patents

Abstract

PURPOSE: To enhance a film durability without impairing etching properties by a method wherein two layers of transparent conductive films composed mainly of indium/tin oxide and having different crystallinities are laminated on a polyether sulfone film having a specific thickness and coated with an acrylic organic anchor coat on one surface thereof. CONSTITUTION: An acrylic organic anchor coat 2 is applied to one surface of a polyether sulfone film 1 of 100-300μm thickness. An amorphous transparent conductive film 3 of 700-2000Å thickness composed mainly of indium/tin oxide is laminated on the acrylic organic anchor coat 2. Furthermore, thereon a transparent conductive film 4 of 100-300Å thickness mainly composed of indium/tin oxide and having a crystallinity higher than that of the transparent conductive film 3 is laminated. The total thickness of the transparent conductive films is not less than 1000Å The transparent conductive film has a balance between the high durability of the crystalline transparent conductive film 4 as an upper layer and the good etching properties of the amorphous conductive film 3 as a lower layer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent conductive film used for liquid crystal displays and the like. More specifically, the present invention relates to a transparent conductive film obtained by laminating two layers of transparent conductive film containing indium tin oxide having different crystallinity as a main component on a polyether sulfone film having at least one surface coated with an acrylic organic anchor coat. .

[0002]

2. Description of the Related Art A transparent conductive film made of a transparent conductive film containing indium tin oxide as a main component (hereinafter referred to as an ITO film) is an electrode for liquid crystal displays, etc. It is used as a material. Since these electrode materials are often accompanied by etching treatment, good etching characteristics are required, and at the same time, high durability performance that can endure an assembly process of a liquid crystal display or the like is also required. By the way, if it becomes a low resistance ITO film, IT
In many cases, the O film thickness exceeds 1000Å, and the etching becomes difficult as the ITO film thickness increases. Therefore, in order to improve the etching characteristics, the ITO film may be made amorphous, but this lowers the durability performance (heat resistance, wet heat resistance, scratch resistance, etc.) of the ITO film.

[0003]

SUMMARY OF THE INVENTION An object of the present invention is to provide an electrode material suitable for a liquid crystal display or the like, which improves the film durability without impairing the etching property.

[0004]

[Means for Solving the Problems] Acrylic organic anchor coat provided on at least one surface of a polyethersulfone film having a thickness of 100 to 300 μm is amorphous and has a thickness.
A transparent conductive film containing 700 to 2000Å indium tin oxide as the main component is stacked, and a transparent conductive film with a crystallinity higher than that of the lower layer and a thickness of 100 to 300Å indium tin oxide as the main component. Laminate the membranes. At this time, the total thickness of the transparent conductive film whose main component is indium tin oxide is
1000 Å or more. The transparent conductive film formed in this manner balances the high durability of the upper crystalline ITO film with the good etching property of the lower amorphous ITO film, and does not impair the etching property and is better than conventional ones. An ITO film with high durability can be obtained.

[0005]

【Example】

Example 1 As an example of the present invention, an acrylic organic anchor coat 2 was applied to one side of a 100 μ thick polyether sulfone (PES) film 1 by a gravure roll coater. This was fixed to a substrate holder in a DC magnetron sputtering device. After evacuating the vacuum chamber to 5 × 10 ^-6 mbar, a mixed gas of argon and oxygen (Ar: O ₂ =
5: 1) is introduced, the degree of vacuum is kept at 6 × 10 ^-3 mbar, the substrate temperature is 40 ° C., and reactive sputtering is performed using an In / Sn alloy target (Sn: 10% by weight) to form the ITO film lower layer 3 Was formed. When the X-ray diffraction pattern (FIG. 3) of the film formed at this time is seen, it can be seen that no peak appears and an amorphous ITO film is formed. After that, using the same sputtering device, a mixed gas of argon and oxygen (Ar: O ₂ = 5: 1) was introduced,
The ITO film upper layer 4 was formed by performing sputtering film formation at a substrate temperature of 140 ° C. while maintaining the degree of vacuum at 2 × 10 ⁻³ mbar. It can be seen that the X-ray diffraction pattern (FIG. 4) of the ITO film formed at this time has a peak and is crystalline. As for the ITO film thickness, a transparent conductive film having a lower layer of 1500 Å and an upper layer of 250 Å as shown in FIG. 1 was obtained by measurement with a precision step meter by simple etching. When this transparent conductive film was etched with 3N hydrochloric acid, the conductivity was lost in 90 seconds and no unmelted part remained. Heat resistance (150 ℃, 3 hours), Moisture heat resistance (80 ℃, 90%, 48 hours), Scratch resistance (10
The change in resistance before and after each treatment (0 g / cm ² 100 reciprocating gauze friction) was measured.
It was less than twice.

Comparative Example 1 As Comparative Example 1 of the present invention, 100
An acrylic organic anchor coat 2 was applied to one side of a μ-thick polyether sulfone film 1 with a gravure roll coater. This was fixed to a substrate holder in a DC magnetron sputtering device. 5 × 10 ^-6 mbar in the vacuum chamber
Mixed gas of argon and oxygen (Ar: O ₂ =
5: 1) was introduced and the vacuum was maintained at 6 × 10 ^-3 mbar. The ITO film 5 was formed by performing reactive sputtering using an In / Sn alloy target (Sn: 10% by weight) at a substrate temperature of 40 ° C. The X-ray diffraction pattern (FIG. 5) of the film formed at this time shows no peak and it can be seen that an amorphous ITO film was formed. The ITO film thickness was 1700Å as measured by a precision step meter by simple etching, and a transparent conductive film as shown in Fig. 2 was obtained. When this transparent conductive film was etched with 3N hydrochloric acid, the conductivity was lost in 90 seconds and no unmelted part remained. When heat resistance, moist heat resistance and scratch resistance were measured in the same manner as in Example 1, the resistance change before and after the test was 1.1 to 1.6 times in all cases.

<< Comparative Example 2 >> 100 as Comparative Example 2 of the present invention.
An acrylic organic anchor coat was applied to one side of a μ-thickness polyether sulfone film with a gravure roll coater. This was fixed to a substrate holder in a DC magnetron sputtering device. After evacuating the vacuum chamber to 5 × 10 ^-6 mbar, a mixed gas of argon and oxygen (Ar: O ₂ = 5:
Introducing 1), and maintaining the vacuum at 2 × 10 ^-3 mbar, the substrate temperature is 140 ℃ and the In / Sn alloy target (Sn: 10% by weight).
Was used for reactive sputtering to form an ITO film 5. The X-ray diffraction pattern (FIG. 6) of the ITO film formed at this time has a peak, which shows that the ITO film is crystalline. The ITO film thickness was 1700Å as measured by a precision step meter by simple etching, and a transparent conductive film as shown in Fig. 2 was obtained. When this transparent conductive film was etched with 3N hydrochloric acid, the conductivity did not disappear even after immersion for 300 seconds. When heat resistance, wet heat resistance and scratch resistance were measured in the same manner as in Example 1, the resistance change before and after the test was 1.1 times or less.

The above evaluation results are shown in Table 1. Table 1 Change in resistance value before and after treatment Etching resistance Heat resistance Moisture resistance Anti-scratch resistance Example 1 90 seconds Complete dissolution 1.1 times 1.1 times 1.0 times Comparative example 1 90 seconds Complete dissolution 1.6 times 1.4 times 1.1 times Comparative example 2 Insoluble 1.0 times 1.1 times 1.0 times

[0009]

According to the present invention, the film durability can be improved without impairing the etching property, and an electrode material for a transparent conductive film suitable for a liquid crystal display or the like can be provided.

[Brief description of drawings]

FIG. 1 shows a layer structure of the present invention.

FIG. 2 shows a layer structure of a conventional product and a comparative example.

FIG. 3 shows an X-ray diffraction pattern of an ITO film lower layer of Example 1.

FIG. 4 shows an X-ray diffraction pattern of an ITO film upper layer of Example 1.

5 shows an X-ray diffraction pattern of the ITO film of Comparative Example 1. FIG.

FIG. 6 shows an X-ray diffraction pattern of the ITO film of Comparative Example 2.

Claims (1)

[Claims] 1. An amorphous organic anchor coat provided on at least one surface of a film made of polyethersulfone having a thickness of 100 to 300 μm and having an amorphous thickness of 700 to 700 μm.
A transparent conductive film containing 2000 Å indium tin oxide as the main component is laminated, and a transparent conductive film containing 100 to 300 Å indium tin oxide as the main component with a higher crystallinity than the lower layer. A transparent conductive film which is laminated and has a total thickness of 1000 Å or more of a transparent conductive film containing indium tin oxide as a main component.