JPS63110420A - Conductive base material - Google Patents
Conductive base materialInfo
- Publication number
- JPS63110420A JPS63110420A JP61257964A JP25796486A JPS63110420A JP S63110420 A JPS63110420 A JP S63110420A JP 61257964 A JP61257964 A JP 61257964A JP 25796486 A JP25796486 A JP 25796486A JP S63110420 A JPS63110420 A JP S63110420A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive layer
- base material
- conductive
- polarizing film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims description 21
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 14
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 6
- 239000005001 laminate film Substances 0.000 claims description 10
- -1 polyethylene terephthalate Polymers 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 13
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 238000002834 transmittance Methods 0.000 abstract description 6
- 238000010030 laminating Methods 0.000 abstract description 5
- 238000001771 vacuum deposition Methods 0.000 abstract description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052740 iodine Inorganic materials 0.000 abstract description 3
- 239000011630 iodine Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Laminated Bodies (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は導電性基材に関するもので、詳しくは、偏光フ
ィルムに導電性を付与した透明な導電性基材に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a conductive base material, and more particularly, to a transparent conductive base material having conductivity imparted to a polarizing film.
（従来技術とその欠点）
例えば、液晶表示用ディバイスとして用いる基材として
は、偏光機能を有する透明で、しかも、導電性を有する
ものを用いる必要があるが。(Prior Art and Its Disadvantages) For example, as a substrate used as a liquid crystal display device, it is necessary to use a substrate that is transparent and has a polarizing function and is also electrically conductive.
従来、とれら基材として１通常、ガラス板をメインとし
、これに偏光機能及び導電性を付与したものが使用され
ていた。Conventionally, a glass plate has been used as the base material, and the glass plate has been provided with a polarizing function and conductivity.
しかし、近年、基材の軽量薄型化、並びに。However, in recent years, base materials have become lighter and thinner.
わん曲面を有する基材の加工性などの点から。From the viewpoint of workability of base materials with curved surfaces.
ガラス板に代えて１合成樹脂フィルムを用いる方法が提
案されている。この場合、市販ノ偏光フィルムを利用す
ると、フィルム自体に偏光機能があるので、これに導電
性を付与するだけであシ便利である。A method has been proposed in which a synthetic resin film is used instead of a glass plate. In this case, if a commercially available polarizing film is used, since the film itself has a polarizing function, it is convenient to simply impart conductivity to the film.
ところが、現在、市販されている偏光フィルムハ、ヨー
ドを含んだポリビニルアルコールよりなるものが代表的
であるが、このフィルムは湿気に対して弱い上１強度的
にも問題があシ、また、この表面に導電層を設けるため
に、金属酸化物をスパッタリングした場合、均質な導電
層の形成が難しいと言う欠点を有する。したがって、折
角、市販の偏光フィルムがあるのにも拘らず、これを利
用することができないのが実情であった。However, the typical polarizing film currently on the market is made of polyvinyl alcohol containing iodine, but this film is weak against moisture and has problems in terms of strength. When a metal oxide is sputtered to provide a conductive layer on the surface, it has the disadvantage that it is difficult to form a homogeneous conductive layer. Therefore, even though there are commercially available polarizing films, it has not been possible to utilize them.
（発明の目的と達成手段）
そこで１本発明は、市販の偏光フィルムの欠点を改善し
、改良された導電性基材を得ようとするものであり、こ
の目的は偏光フィルムの両面に透明な疎水性フィルムを
積層し、このラミよシ達成される。(Objectives and Means for Achieving the Invention) Therefore, the present invention aims to improve the drawbacks of commercially available polarizing films and obtain an improved conductive substrate. This lamination is achieved by laminating hydrophobic films.
以下１本発明を添付図面に沿って詳細に説明するに、第
７図及び第２図は本発明の導電性基材の一例を示す断面
図であシ％（１）は偏光フィルム、 （２＋、 （３１
は疎水性フィルム％（４）は導電層、（５）は反射層を
示す。The present invention will be explained in detail below with reference to the accompanying drawings. FIG. 7 and FIG. 2 are cross-sectional views showing an example of the conductive base material of the present invention. , (31
% is a hydrophobic film, (4) is a conductive layer, and (5) is a reflective layer.
偏光フィルム（１）はヨードを含むポリビニルアルコー
ルによって形成されたフィルムであシ、通常の市販品を
用いることができる。この偏光フィルム（１）の厚さは
通常、２ｏ−，２ｏｏμｍであＡｏ
本発明では偏光フィルム（１）の両面に疎水性フィルム
［２１，（３１が積層され、一体となったラミネートフ
ィルムとなっているが、ここで用いられる疎水性フィル
ムｆ２１． （３１は透明であることが必要であシ１通
常、その透過率は７０％以上、好ましくはｇｏ％以上で
ある。また、このフィルムは疎水性であるが１通常、吸
湿ｉ（ＡＳＴＭＤ−４７０による）が７％以下で、しか
も、水蒸気透過Ｘ（ＡＳＴＭＥ−９乙による）が／ ｏ
ｏ ｊ；ｌ ／ｒｌ、Ｑｌｌｈｒ以下のものが利用さ
れる。これらのフィルムの具体例としては１例えば、ポ
リエチレンテレフタレート、ポリエーテルサルホン、ポ
リカーボネート、ポリエチレンナフタレート、ポリイミ
ド、ポリサルホン、ポリエーテルケトンなどが挙げられ
、特に、ポリエチレンテレフタレート、ポリエチレンナ
フタレートが好ましい。The polarizing film (1) is a film made of polyvinyl alcohol containing iodine, and a common commercial product can be used. The thickness of this polarizing film (1) is usually 20-20 μm, and in the present invention, hydrophobic films [21, (31) are laminated on both sides of the polarizing film (1) to form an integrated laminate film. However, the hydrophobic film f21. (31) used here must be transparent. Usually, its transmittance is 70% or more, preferably go% or more. Normally, the moisture absorption i (according to ASTM D-470) is 7% or less, and the water vapor permeability X (according to ASTM E-9) is / o
The following are used: o j;l /rl, Qllhr. Specific examples of these films include polyethylene terephthalate, polyethersulfone, polycarbonate, polyethylene naphthalate, polyimide, polysulfone, and polyetherketone, with polyethylene terephthalate and polyethylene naphthalate being particularly preferred.
また、このフィルムは／軸又はλ軸に延伸されたものが
特に好ましい。疎水性フィルム（２１，（３１の厚さは
通常、各々、２０−２θＯａｍ 、好ましくはＳＯ〜／
ｇＯμｍである。偏光フィルム（１１の上面と下面との
疎水性フィルム（２１，（３１は別々のものでも差し支
えないが１通常は同様のフィルムが用いられる。Further, it is particularly preferable that this film be stretched along the / axis or the λ axis. The thickness of the hydrophobic film (21, (31) is usually 20-2θOam, preferably SO~/
gOμm. Hydrophobic films (21, (31) on the upper and lower surfaces of the polarizing film (11) may be separate films, but the same films are usually used.
偏光フィルム（１）への疎水性フィルム（２）％（３）
の積層方法としては、常法に従って１例えば、接着剤に
よシラミネートする方法、又は、ドライラミネート法に
よシラミネートする方法が採用し得る。ここで用いる接
着剤としては１通常。Hydrophobic film (2)% (3) to polarizing film (1)
As a laminating method, conventional methods may be used, such as silaminating with an adhesive or dry laminating. The adhesive used here is 1.
シリコーン樹脂系、ウレタン樹脂系、アクリル樹脂系、
エポキシ樹脂系、フェノキシ樹脂系。silicone resin, urethane resin, acrylic resin,
Epoxy resin type, phenoxy resin type.
ポリエステル系などの公知のものを利用することができ
る。Known materials such as polyester can be used.
本発明では上述のように構成されたラミネートフィルム
の少なくとも一面に導電層（４）を有するが、この導電
層（４）はその用途に応じて１片面又は両面に形成され
る。In the present invention, the laminate film configured as described above has a conductive layer (4) on at least one surface, and the conductive layer (4) is formed on one or both surfaces depending on the application.
導電層（４）は酸化インジウム及び／又は酸化スズを主
体とするものであシ１通常、スパッタリング法又は真空
蒸着法によシ形成させることができる。導電層（４）の
形成は通常、基材の表面抵抗値が１０〜１０５Ω／口（
Ω／スクエア）であシ。The conductive layer (4) is mainly composed of indium oxide and/or tin oxide, and can usually be formed by a sputtering method or a vacuum evaporation method. The conductive layer (4) is usually formed when the surface resistance value of the base material is 10 to 105Ω/hole (
Ω/square) Ashi.
また、基材の可視光透過率（ｊｔＯｎｍ）が３０％以上
、好ましくは３ｔＸ以上となるように調節するのが好ま
しい。この導電層（４）の厚さは通常３ｏ〜３０００λ
程度である。また、導電層（４）の形成に先だって、必
要に応じて、ラミネートフィルムの表面に例えば、シリ
コン系樹脂、ウレタン樹脂、エポキシ樹脂などの熱硬化
性樹脂を下塗シしても差し支えない。Further, it is preferable to adjust the visible light transmittance (jtOnm) of the base material to 30% or more, preferably 3tX or more. The thickness of this conductive layer (4) is usually 3o~3000λ
That's about it. Further, prior to forming the conductive layer (4), the surface of the laminate film may be undercoated with a thermosetting resin such as a silicone resin, urethane resin, or epoxy resin, if necessary.
なお、スパッタリング法とは減圧槽中に窒素。In addition, the sputtering method uses nitrogen in a vacuum tank.
アルゴン等の不活性ガスを封入し、該不活性ガスをイオ
ン化してターゲットに照射し、ターゲットを原子または
分子状態で飛散させ、該蒸発したターゲット物質を基板
表面に沈着させる方法であシ、グロー放電スパッタリン
グ法、マグネトロンスパッタリング法、イオンビームス
パッタリング法等の方式がある。This is a method in which an inert gas such as argon is sealed, the inert gas is ionized, and the target is irradiated, the target is scattered in an atomic or molecular state, and the evaporated target material is deposited on the substrate surface. Methods include discharge sputtering, magnetron sputtering, and ion beam sputtering.
また、真空蒸着法とは高真空中で蒸着材料を加熱蒸発さ
せ、この蒸発粒子を基板上に沈着させる方法であシ、加
熱方式によって、抵抗加熱法、アーク蒸発法、レーザー
加熱法、高周波加熱法、電子ビーム加熱法等がある。In addition, the vacuum evaporation method is a method in which the evaporation material is heated and evaporated in a high vacuum, and the evaporated particles are deposited on the substrate. Depending on the heating method, there are resistance heating method, arc evaporation method, laser heating method, high frequency heating method, etc. method, electron beam heating method, etc.
本発明における金属成分のスパッタリング又は真空蒸着
は常法に従って、例えば、直流マグネトロン式スパッタ
リング装置又はイオンヒーム蒸着装置を用いて、必要に
応じて、少量の酸素を含有する不活性ガス中において、
ＳＯ〜１．５′００Ｃ１好ましくは７０− ／ ００
’（：、の温度で／ ０−’ 〜／ ０−２ｔｏｒｒ
、好ましくは／（１）’ｔｏｒｒ台の減圧下で実施する
ことができる。Sputtering or vacuum evaporation of the metal component in the present invention is performed according to a conventional method, for example, using a DC magnetron sputtering device or an ion beam evaporation device, if necessary, in an inert gas containing a small amount of oxygen.
SO~1.5'00C1 preferably 70-/00
'(:, at the temperature of / 0-' ~ / 0-2torr
, preferably under reduced pressure on the order of /(1)'torr.
更に１本発明においては、ラミネートフィルムの片面の
みに導電層（４）を設け１反対面にアルミニウムよりな
る反射層（５）を設けた基材は特に。Furthermore, in the present invention, a base material in which a conductive layer (4) is provided on only one side of a laminate film and a reflective layer (5) made of aluminum is provided on the opposite side is particularly used.
液晶表示用の反射板として適した導電性基材となるので
好ましい。This is preferable because it becomes a conductive base material suitable as a reflective plate for liquid crystal displays.
この場合の反射層（５）の厚さは通常、ＳＯＯ〜λθ０
０λ１好ましくは７ ’００〜／３００λであシ、この
厚さがあま）薄いと反射板としての機能を果さず、また
、あ″！シ厚くても効早に変シはない。この反射層（５
）の形成も、上述のスパッタリング法又は真空蒸着法に
よシ行なうことができる。The thickness of the reflective layer (5) in this case is usually SOO~λθ0
0λ1 is preferably 7'00~/300λ.If this thickness is too thin, it will not function as a reflector, and even if it is thick, there will be no change in effectiveness.This reflection layer (5
) can also be formed by the above-mentioned sputtering method or vacuum evaporation method.
また１反対層（５）の表面には１通常、保護層（６）が
形成されるが、この保護層（６）としては１例えば−シ
リコン系樹脂、ウレタン系樹脂、エボキ・シ系樹脂など
よりなるコーティング剤を塗布することにより形成させ
ることができる。保護層（６）の厚さは通常、０．７〜
１０μｍ程度である。In addition, a protective layer (6) is usually formed on the surface of the opposite layer (5), and this protective layer (6) may be made of silicone resin, urethane resin, epoxy resin, etc. It can be formed by applying a coating agent consisting of: The thickness of the protective layer (6) is usually 0.7~
It is about 10 μm.
（実施例）
次に１本発明を実施例によシ更に詳細に説明するが１本
発明はその要旨を超えない限シ、以下の実施例に限定さ
れるものではない。(Examples) Next, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited to the following Examples unless it exceeds the gist thereof.
実施例１
厚さ≠！μｍ の市販のヨードを含むポリビニた厚さ／
００ ｌｔｍのポリエチレンテレフタレートフィルム
（透過率（ＩｔＯｎｍ）Ｊ’７％、水蒸気透過率（ＡＳ
ＴＭＥ−タｔ）ざｇ／ｌｒｒ／２１１ｈｒ、 、ｆイ
ヤホイル■Ｍ）をウレタン樹脂系接着剤を用いてホット
プレスによ多積層し、ラミネートフィルムを得た。Example 1 Thickness≠! Thickness of commercially available iodine-containing polyvinyl vinyl in μm/
00 ltm polyethylene terephthalate film (transmittance (ItOnm) J'7%, water vapor permeability (AS
TME-tat) g/lrr/211hr, f ear foil M) were laminated in a hot press using a urethane resin adhesive to obtain a laminate film.
このラミネートフィルムの片面に、酸化インジウム−酸
化スズ（９Ｊ′：よ）をターゲットとして、直流マグネ
トロンナスバッタリンク装置を用いて、下記条件でスパ
ッタリングを行ない。Sputtering was performed on one side of this laminate film using a direct current magnetron backsputter link apparatus under the following conditions using indium oxide-tin oxide (9J': yo) as a target.
導電層（４）を形成させた。A conductive layer (4) was formed.
〈スパッタリング条件〉
雰囲気ガス： Ｏ，，７，ｖｏ、／％金含有アルゴン
ガス温 度： ７０℃
圧 カニ ３Ｘ１０”””ｔ、ｏｒｒこのように
して得た導電性基材の表面抵抗値はＳＯＯΩ／口と良好
なものであシ、シかも。<Sputtering conditions> Atmosphere gas: O,,7,vo,/% gold-containing argon gas Temperature: 70°C Pressure 3X10"""t,orrThe surface resistance value of the conductive base material obtained in this way is SOOΩ / It might be good if you have a good mouth.
偏光性も良好（偏光度り７５Ａ）なものであった。The polarization property was also good (polarization degree 75A).
また、この基材の可視光透過率は３ＺＸであった。Moreover, the visible light transmittance of this base material was 3ZX.
実施例認
実施例１の方法で得られた基材にお−で、導電層（４）
と反対面にアルミニウムをターゲットとして、実施例／
と同様のスパッタリング装置を用いて下記条件にてスパ
ッタリングを行ない。Example Identification A conductive layer (4) was applied to the base material obtained by the method of Example 1.
Example/Target aluminum on the opposite side.
Sputtering was carried out under the following conditions using a sputtering apparatus similar to the above.
厚さ１ｏｏｏλのアルミニウム層よりなる反射層（５）
を形成させた。Reflective layer (5) made of an aluminum layer with a thickness of 1oooλ
formed.
くスパッタリング条件〉
雰囲気ガス： アルゴンガス
温 度： ７０℃
圧 カニ ３’Ａ１０−３ｔｏｒｒこのようにし
て得た反射層（５）を有する導電性基材の可視光透過率
は０％（すなわち１反射率１００％）で、あシ１反射型
液晶ディスプレー表（発明の効果）
本発明によれば、市販のヨードを含むポリビニルアルコ
ールよりなる偏光フィルムを利用して導電性基材を得る
ことができるので、製造が簡単であシ、製造コストも安
価である。そして。Sputtering conditions> Atmosphere gas: Argon gas Temperature: 70°C Pressure: 3'A10-3 torr The visible light transmittance of the conductive base material having the reflective layer (5) thus obtained is 0% (i.e., 1 reflection (Effect of the Invention) According to the present invention, a conductive base material can be obtained using a commercially available polarizing film made of polyvinyl alcohol containing iodine. , it is easy to manufacture, and the manufacturing cost is low. and.
本発明の導電性基材は偏光フィルムの持つ吸湿性、強度
の問題点が改善されている上、ラミネートフィルム上に
均質な導電層が形成されるため、極めて高品質なもので
ある。The conductive substrate of the present invention has extremely high quality because it has improved the problems of hygroscopicity and strength of polarizing films, and also forms a homogeneous conductive layer on the laminate film.
そのため１本発明の導電性基材は液晶表示用ディバイス
又は反射板金始め、ＩＣカードなども適用でき、その応
用分野は広い。Therefore, the conductive substrate of the present invention can be applied to liquid crystal display devices, reflective sheet metals, IC cards, etc., and its application fields are wide.
第１図及び第２図は本発明の導電性基材の一例を示す断
面図であシ％（１）は偏光フィルム、（２１゜（３）は
疎水性フィルム、（４）は導電層、（５）は反射層を示
す。
−ユユー
蒸 １ 図
第２医1 and 2 are cross-sectional views showing an example of the conductive base material of the present invention. (1) is a polarizing film, (21° (3) is a hydrophobic film, (4) is a conductive layer, (5) indicates the reflective layer. -Yuyu Steam 1 Figure 2
Claims (4)
フイルムの両面に、透明な疎水性フイルムを積層したラ
ミネートフイルムの少なくとも一面に酸化インジウム及
び／又は酸化スズよりなる導電層を設けてなる導電性基
材。(1) A conductive base material comprising a laminate film in which a transparent hydrophobic film is laminated on both sides of a polarizing film made of polyvinyl alcohol containing iodine, and a conductive layer made of indium oxide and/or tin oxide is provided on at least one side of the laminate film.
ポリエチレンナフタレート又はポリエーテルスルホンで
ある特許請求の範囲第（１）項記載の導電性基材。(2) The hydrophobic film is polyethylene terephthalate,
The conductive substrate according to claim (1), which is polyethylene naphthalate or polyether sulfone.
フイルムの両面に、透明な疎水性フイルムを積層したラ
ミネートフイルムの一面に酸化インジウム及び／又は酸
化スズよりなる導電層を設けると共に、他面にアルミニ
ウムよりなる反射層を設けてなる導電性基材。(3) A conductive layer made of indium oxide and/or tin oxide is provided on one side of a laminate film in which a transparent hydrophobic film is laminated on both sides of a polarizing film made of polyvinyl alcohol containing iodine, and a conductive layer made of aluminum is provided on the other side. A conductive base material provided with a reflective layer.
ポリエチレンナフタレート又はポリエーテルスルホンで
ある特許請求の範囲第（３）項記載の導電性基材。(4) The hydrophobic film is polyethylene terephthalate,
The conductive substrate according to claim (3), which is polyethylene naphthalate or polyether sulfone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61257964A JPS63110420A (en) | 1986-10-29 | 1986-10-29 | Conductive base material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61257964A JPS63110420A (en) | 1986-10-29 | 1986-10-29 | Conductive base material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63110420A true JPS63110420A (en) | 1988-05-14 |
Family
ID=17313657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61257964A Pending JPS63110420A (en) | 1986-10-29 | 1986-10-29 | Conductive base material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63110420A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01295222A (en) * | 1988-05-23 | 1989-11-28 | Matsushita Electric Ind Co Ltd | Transparent electroconductive film |
| JPH02258250A (en) * | 1988-12-15 | 1990-10-19 | Toyota Central Res & Dev Lab Inc | Ultrahydrophobic composite, manufacture and optically functional material thereof |
-
1986
- 1986-10-29 JP JP61257964A patent/JPS63110420A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01295222A (en) * | 1988-05-23 | 1989-11-28 | Matsushita Electric Ind Co Ltd | Transparent electroconductive film |
| JPH02258250A (en) * | 1988-12-15 | 1990-10-19 | Toyota Central Res & Dev Lab Inc | Ultrahydrophobic composite, manufacture and optically functional material thereof |
| JP2732129B2 (en) * | 1988-12-15 | 1998-03-25 | 株式会社豊田中央研究所 | Superhydrophobic composite material, method for producing the same, and optical functional material |
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