JPH08172110A - Manufacture of circuit board - Google Patents
Manufacture of circuit boardInfo
- Publication number
- JPH08172110A JPH08172110A JP33385794A JP33385794A JPH08172110A JP H08172110 A JPH08172110 A JP H08172110A JP 33385794 A JP33385794 A JP 33385794A JP 33385794 A JP33385794 A JP 33385794A JP H08172110 A JPH08172110 A JP H08172110A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- resin
- soldering
- halogen
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
- H01L2224/10125—Reinforcing structures
- H01L2224/10126—Bump collar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、回路基板の製造方法に
関し、特に、回路素子を半田付けし、外部電極等を導体
にアルミワイヤでボンディングする構造を有する回路基
板の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a circuit board, and more particularly to a method for manufacturing a circuit board having a structure in which circuit elements are soldered and external electrodes and the like are bonded to conductors with aluminum wires.
【０００２】[0002]
【従来の技術】従来、主に半導体装置で、回路基板上の
導体にアルミワイヤを超音波圧着法でボンディングする
と、アルミ材は超音波振動により導体と互いに表面を擦
り合わせ、塑性変形を起こしつつ、表面の汚染層が除去
され、内部の清浄な金属どうしが密着し、接合する。ア
ルミワイヤは安価であるため、比較的太い径（例えば数
100 μｍ) の線材を用いて大きな電流容量を確保でき、
よく使用されるが、アルミは高温に加熱すると酸化が著
しく促進し、接合が困難であるため、もっぱら超音波に
より常温で接合される。2. Description of the Related Art Conventionally, in a semiconductor device, when an aluminum wire is bonded to a conductor on a circuit board by an ultrasonic pressure bonding method, the aluminum material rubs its surface with the conductor due to ultrasonic vibration, causing plastic deformation. , The surface contamination layer is removed, and the clean metal inside adheres and joins. Since aluminum wire is cheap, it has a relatively large diameter (for example, a few
A large current capacity can be secured by using a wire rod of 100 μm)
It is often used, but when aluminum is heated to a high temperature, its oxidation is remarkably promoted and it is difficult to bond the aluminum.
【０００３】アルミ超音波ボンディングは、ボンディン
グを行う前に半導体素子等を回路基板に搭載しておく必
要性がある。素子を搭載する方法は、半田付けによる方
法や、銀(Ag)ペースト等の導電性接着剤を用いる方法が
あるが、コストや作業の容易性、微細接合性、および信
頼性の点で半田付け法が優れており、ほとんど半田付け
法で実施される。In aluminum ultrasonic bonding, it is necessary to mount a semiconductor element or the like on a circuit board before bonding. There are two methods for mounting the element, one is by soldering and the other is by using a conductive adhesive such as silver (Ag) paste.However, soldering is performed in terms of cost, ease of work, fine bondability, and reliability. The method is excellent and is mostly carried out by the soldering method.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、アルミ
ワイヤをボンディングする前の素子を半田付けする工程
において、フラックス材に含まれるハロゲンと回路基板
上の導体が反応してしまい、ハロゲン化合物が形成され
る。このハロゲン化合物は非金属であるためにアルミと
密着せず、導体表面に形成した場合、表面汚染層とな
り、ワイヤボンディングの際の汚染層除去作用が不完全
なものとなってしまう。そのため、内部の清浄な金属が
露出せず、金属どうしの密着が不完全となり、接合が不
良となる。このアルミワイヤボンディングにおいて接合
が不完全となることにより、半導体全体の信頼性を著し
く低下させてしまうという問題がある。However, in the step of soldering the element before the aluminum wire is bonded, the halogen contained in the flux material reacts with the conductor on the circuit board to form a halogen compound. . Since this halogen compound is a non-metal, it does not adhere to aluminum and forms a surface contamination layer when formed on the surface of the conductor, resulting in an incomplete removal of the contamination layer during wire bonding. Therefore, the clean metal inside is not exposed, the adhesion between the metals becomes incomplete, and the joining becomes defective. There is a problem that the reliability of the entire semiconductor is remarkably lowered due to incomplete bonding in the aluminum wire bonding.
【０００５】これを解決するために、特開平4-346236号
公報には、この汚染をレーザ光にて除去する手法が提案
されているが、この手法では汚染除去のために大がかり
なレーザ装置を必要とし、製造コストを上げるなど適切
とは言えない。In order to solve this, Japanese Patent Laid-Open No. 4-346236 proposes a method of removing this contamination with a laser beam. In this method, a large-scale laser device is used for removing the contamination. It is not appropriate because it requires the manufacturing cost.
【０００６】従って本発明の目的は、回路基板の製造に
おいて、簡素かつボンディングを確実にする製造方法を
提供することである。[0006] Therefore, an object of the present invention is to provide a manufacturing method which ensures simple and reliable bonding in manufacturing a circuit board.
【０００７】[0007]
【課題を解決するための手段】上記の課題を解決するた
め本発明の構成は、回路基板上に搭載する素子を半田付
けする工程を有し、該回路基板上の導体と該回路基板外
部の端子とをアルミワイヤボンディングする工程を有す
る回路基板の製造方法において、該端子を半田付けする
工程前に、前記導体よりなるボンディング用電極を被覆
部材で覆う被覆工程を有することを特徴とする回路基板
の製造方法であって、前記被覆部材が半田ペーストのフ
ラックス材の洗浄液に溶解可能な第一樹脂を主成分と
し、第一樹脂にはんだ付け材に含まれるハロゲンを捕捉
して固定するハロゲン捕捉材が混合されていることであ
る。また関連発明の構成は、前記ハロゲン捕捉材が、少
なくともその一部構造中に不飽和結合を有する第二樹脂
より成り、その不飽和結合が樹脂一分子あたり１個以
上、５個以下であり、前記第二樹脂の添加量が２％以上
４０％未満であることを特徴とする。あるいはまた別の
関連する発明の構成は、前記ハロゲン捕捉材が、半田ペ
ーストのフラックス材の洗浄液に溶解可能な樹脂と、半
田付け温度で陰イオンを吸着する性質を有する無機材料
から成ることを特徴としている。In order to solve the above problems, the structure of the present invention includes a step of soldering an element to be mounted on a circuit board, and the conductor on the circuit board and the outside of the circuit board are provided. In a method of manufacturing a circuit board, which includes a step of aluminum wire bonding with a terminal, a circuit board having a coating step of coating a bonding electrode made of the conductor with a coating member before the step of soldering the terminal. A method of manufacturing a halogen trapping material, wherein the coating member comprises a first resin as a main component which is soluble in a cleaning liquid for a flux material of a solder paste, and traps and fixes halogen contained in a soldering material on the first resin. Are mixed. Further, in the configuration of the related invention, the halogen scavenger comprises a second resin having an unsaturated bond in at least a partial structure thereof, and the unsaturated bond is 1 or more and 5 or less per resin molecule, The addition amount of the second resin is 2% or more and less than 40%. Alternatively, the structure of another related invention is characterized in that the halogen trapping material is made of a resin that is soluble in a cleaning liquid for a flux material of a solder paste and an inorganic material having a property of adsorbing anions at a soldering temperature. I am trying.
【０００８】本発明の構成はまた、さらに加えて、前記
第二樹脂が、アクリル樹脂モノマーであることを特徴と
し、あるいはまた、前記無機材料が、セラミックイオン
交換体であることを特徴とする。The structure of the present invention is further characterized in that the second resin is an acrylic resin monomer, or the inorganic material is a ceramic ion exchanger.
【０００９】[0009]
【作用】半田付け工程前に、ハロゲン元素を捕捉する特
定の材料を含んだ樹脂で導体を被覆しておくことによ
り、半田付け工程において、フラックスに含まれるハロ
ゲン成分は、導体表面に達する前に、該被覆樹脂中の不
飽和結合と反応するか、あるいは、該被覆樹脂中の無機
物に吸着されるため、いずれも導体表面にハロゲン化合
物は形成されない。Function: Before the soldering step, the conductor is coated with a resin containing a specific material for capturing the halogen element, so that the halogen component contained in the flux does not reach the conductor surface in the soldering step. In this case, the halogen compound is not formed on the conductor surface because it reacts with the unsaturated bond in the coating resin or is adsorbed by the inorganic substance in the coating resin.
【００１０】そのため、ワイヤボンディングの際には、
導体表面の汚染除去が完全に実施され、内部の清浄な金
属が露出し、従って金属どうしの密着が完全となり、接
合が完全に達成される。Therefore, during wire bonding,
The conductor surface is completely decontaminated, the clean metal inside is exposed and therefore the metal-to-metal adhesion is perfect, and a complete bond is achieved.
【００１１】[0011]
【発明の効果】信頼性の高いアルミワイヤボンディング
が実現するので、回路基板の耐振性などの信頼性が向上
し、この回路基板を使用する装置が車載用などの悪環境
でも使用可能となった。またアルミワイヤボンディング
の接合不良がなくなるので、回路基板の製造歩留りも向
上する効果がある。請求項２の構成では、ハロゲン捕捉
材として適切な量の不飽和結合を有する樹脂を含有させ
るので、導体表面に対して最適な保護を実施できる。請
求項３の構成では、はんだが溶ける際に陰イオンとなっ
ているハロゲン元素を無機材料が捕捉して、導体表面に
ハロゲン化合物を形成させないという効果がある。Since highly reliable aluminum wire bonding is realized, the reliability such as vibration resistance of the circuit board is improved, and the device using this circuit board can be used even in a bad environment such as in a vehicle. . Further, since there is no bonding failure in aluminum wire bonding, there is an effect that the manufacturing yield of the circuit board is improved. In the structure of the second aspect, since the resin having the unsaturated bond is contained in an appropriate amount as the halogen capturing material, the conductor surface can be optimally protected. According to the structure of claim 3, the inorganic material captures the halogen element which is an anion when the solder is melted, so that the halogen compound is not formed on the conductor surface.
【００１２】[0012]
【実施例】以下、本発明を具体的な実施例に基づいて説
明する。 （第一実施例）図１(a) は、本発明の製造方法を実施す
る際の回路基板の模式的構成断面図を示す。この第一実
施例では、回路基板にセラミック回路基板３を用いてい
る。このセラミック基板３上に、厚膜導体１が形成され
ており、その横に半導体素子４が半田付けされる導体膜
５が形成される。図１に示すように、半導体素子４は導
体膜５に半田６で半田付けされる。その際、厚膜導体１
上に、分子内に不飽和結合を有する樹脂を含む樹脂材料
で被覆層７が形成されているため、半田６に含まれるフ
ラックス中のハロゲンは図１(b) に示すように不飽和結
合と反応し、厚膜導体１の表面まで達することはなく、
厚膜導体１を汚染することはない。EXAMPLES The present invention will be described below based on specific examples. (First Embodiment) FIG. 1 (a) is a schematic sectional view of a circuit board when a manufacturing method of the present invention is carried out. In the first embodiment, the ceramic circuit board 3 is used as the circuit board. The thick film conductor 1 is formed on the ceramic substrate 3, and the conductor film 5 to which the semiconductor element 4 is soldered is formed next to the thick film conductor 1. As shown in FIG. 1, the semiconductor element 4 is soldered to the conductor film 5 with the solder 6. At that time, the thick film conductor 1
Since the coating layer 7 is formed on the resin material containing a resin having an unsaturated bond in the molecule, halogen in the flux contained in the solder 6 becomes unsaturated bond as shown in FIG. 1 (b). Reacts and does not reach the surface of the thick film conductor 1,
It does not contaminate the thick film conductor 1.
【００１３】図２(a) は、回路基板を用いた装置を製造
する工程に本発明を実施した製造工程の一部で、図２
(b) は従来の製造工程である。用いる被覆層７の材料と
しては、図３に示したように、半田付け工程後に実施す
る洗浄工程の溶剤に可溶な樹脂（本実施例では製品名α
5002）に、不飽和結合を分子内に有する樹脂（本実施例
ではアクリレート樹脂モノマーを初めとする各種樹脂）
を使用している。FIG. 2A is a part of a manufacturing process in which the present invention is carried out in a process of manufacturing a device using a circuit board.
(b) is a conventional manufacturing process. As the material of the coating layer 7 to be used, as shown in FIG. 3, a resin soluble in a solvent in the cleaning step performed after the soldering step (product name α in this example) is used.
5002), a resin having an unsaturated bond in the molecule (in this example, various resins including an acrylate resin monomer)
Are using.
【００１４】不飽和結合を分子内に有する樹脂は、分子
内部に炭素の二重結合を有して、図１(b) のような構
造をしており、陰イオン化しているハロゲン元素が接近
した際に容易に炭素の二重結合が切れてハロゲン元素と
結合し、図１(b) のようにハロゲン元素を固定化す
る。従って、不飽和結合が厚膜導体１の上にある密度で
存在することで、厚膜導体１に影響を及ぼすハロゲン元
素をすべて捕捉できる。このような不飽和結合が多密度
に存在すると、今度は被覆層７を塗布した際に厚膜導体
１の表面自身を変化させてしまうため、かえって正常な
ワイヤボンディングが形成できなくなる。A resin having an unsaturated bond in the molecule has a carbon double bond in the molecule and has a structure as shown in FIG. 1 (b). When this is done, the carbon double bond is easily broken and bonds with the halogen element, immobilizing the halogen element as shown in FIG. 1 (b). Therefore, the presence of unsaturated bonds at a certain density on the thick film conductor 1 makes it possible to trap all halogen elements that affect the thick film conductor 1. If such unsaturated bonds are present in multiple densities, the surface itself of the thick film conductor 1 will be changed when the coating layer 7 is applied this time, so that normal wire bonding cannot be formed.
【００１５】図２(a) で、まず厚膜導体が形成された回
路基板表面に半田ペースト（半田粒子とハロゲンを含む
フラックスとの混合物）を印刷し、半田付けの前処理を
行う。そして次の工程として、半田付けせずにワイヤボ
ンディングを行う厚膜導体１上に、被覆用の樹脂膜（被
覆層７）を形成する。それから半田付け領域に所定の半
導体素子４をマウントし、リフロー加熱で半田付けす
る。その後、半田付けのフラックス等の汚れを洗浄す
る。その際に、被覆した樹脂も同時に溶解させ、ボンデ
ィング用厚膜導体表面も清浄になる。その後、従来と同
様、回路基板のボンディング用厚膜導体と外部端子等を
アルミワイヤボンディングする。In FIG. 2A, first, a solder paste (a mixture of solder particles and a flux containing halogen) is printed on the surface of the circuit board on which the thick film conductor has been formed, and a pretreatment for soldering is performed. Then, in the next step, a coating resin film (coating layer 7) is formed on the thick film conductor 1 to be wire-bonded without soldering. Then, a predetermined semiconductor element 4 is mounted in the soldering area and soldered by reflow heating. Then, stains such as soldering flux are cleaned. At that time, the coated resin is also dissolved at the same time, and the surface of the thick film conductor for bonding is also cleaned. Then, as in the conventional case, the thick film conductor for bonding of the circuit board and the external terminals are bonded by aluminum wire.
【００１６】従って、図２(a) に示すように、本発明の
製造方法は、従来の工程の図２(b)と比べて樹脂塗布工
程が一つ増えるだけで、樹脂除去工程は、半田付け後の
洗浄工程を兼ねるため、大きな負担とならない。なお、
樹脂塗布工程は、厚膜導体パターンの寸法や複雑さなど
により、ハケ塗り法、滴下法、マスク法など、目的に応
じた方法でよい。Therefore, as shown in FIG. 2A, in the manufacturing method of the present invention, the resin removing step is increased by one as compared with the conventional step of FIG. 2B, and the resin removing step is performed by soldering. Since it also serves as a cleaning process after attachment, it does not become a heavy burden. In addition,
The resin coating step may be a method suitable for the purpose, such as a brush coating method, a dropping method, or a mask method, depending on the dimensions and complexity of the thick film conductor pattern.
【００１７】この本発明の方法において、被覆樹脂に含
まれる不飽和結合を有する樹脂の不飽和結合数、含有量
を変えて、表面汚染防止およびボンディング特性を確か
めた結果を図３に示す。一分子当たりの不飽和結合数が
６以上の場合(n=6) 、ハロゲンとの反応は充分であり
（図３のNo.9のポリエステルアクリレート）、導体表面
の汚染は発生してないが、半田付け工程後の洗浄工程で
除去不可能となり、ボンディングは不可能であった。ま
た、不飽和結合数が１(n=1) の樹脂においては、添加量
が１重量％以下では、ハロゲンとの反応が不十分となり
（No.2のノニルフェノールＥＯ変性アクリレート）、ハ
ロゲンによって導体表面に汚染を生じ、逆に40重量％以
上（No.6のノニルフェノールＥＯ変性アクリレート、お
よび図示しないがポリエステルアクリレートの40重量
％）では、導体表面の汚染は生じないが、洗浄工程で除
去できず、ワイヤボンディングは不可能であった。In this method of the present invention, the results of confirming the surface contamination prevention and bonding characteristics by changing the number and content of unsaturated bonds of the resin having unsaturated bonds contained in the coating resin are shown in FIG. When the number of unsaturated bonds per molecule is 6 or more (n = 6), the reaction with halogen is sufficient (No. 9 polyester acrylate in Fig. 3) and the conductor surface is not contaminated, In the cleaning process after the soldering process, it was impossible to remove and bonding was impossible. In addition, in a resin with an unsaturated bond number of 1 (n = 1), if the addition amount is 1% by weight or less, the reaction with halogen becomes insufficient (No. 2 nonylphenol EO-modified acrylate), and the halogen causes a conductor surface. Contamination is caused, and conversely 40% by weight or more (No. 6 nonylphenol EO-modified acrylate, and 40% by weight of polyester acrylate not shown) does not cause contamination of the conductor surface, but cannot be removed in the cleaning step Wire bonding was impossible.
【００１８】上記厚膜導体の表面の清浄性については、
図４に示す表面の拡大模写図のように電子顕微鏡により
3000倍に拡大して確かめた。図４(a) は被覆を実施しな
い従来の場合の厚膜導体の表面で、図４(b) は被覆を実
施した本発明による場合の厚膜導体の表面である。Regarding the cleanliness of the surface of the thick film conductor,
Using an electron microscope as shown in the enlarged copy of the surface shown in Fig.
Enlarged 3000 times and confirmed. FIG. 4 (a) shows the surface of the thick film conductor in the conventional case without coating, and FIG. 4 (b) shows the surface of the thick film conductor in the case of coating according to the present invention.
【００１９】従来の図４(a) は導体表面に無数の粒子状
のハロゲン化合物である汚染物質が確認されたが、本発
明の図４(b) の場合には明らかに汚染がなく、さらに図
５に示すボンディング条件の試験結果でも、接続性が著
しく改善されていることが確かめられた。なお図５のア
ルミボンディング条件の評価図で、各グラフの縦軸およ
び横軸は、ボンディングを実施する際の条件である。な
お、グラフ中のカーブは、ボンディングに投入するエネ
ルギー量が等しいレベルを示し、数値はその指数であ
る。In the prior art FIG. 4 (a), innumerable particulate pollutants, which are halogen compounds, were confirmed on the surface of the conductor, but in the case of FIG. The test results of the bonding conditions shown in FIG. 5 also confirmed that the connectivity was remarkably improved. In the evaluation diagram of the aluminum bonding conditions of FIG. 5, the vertical axis and the horizontal axis of each graph are the conditions when performing the bonding. The curve in the graph shows the level at which the amount of energy input to bonding is equal, and the numerical value is its index.
【００２０】また、グラフの丸印は、そのポイントのボ
ンディング条件におけるボンディングサンプルの総数を
示し（ここでは50個）、黒で示される範囲の割合が不合
格になったパーセンテージを意味する。従って図５か
ら、本発明では不良発生が抑制されて充分効果が発揮さ
れていることが明らかで、ボンディング条件も範囲が広
がり、製造上の応用性が向上していることが明らかであ
る。The circles in the graph indicate the total number of bonding samples under the bonding conditions at that point (50 in this case), which means the percentage of the range in black that has failed. Therefore, it is clear from FIG. 5 that occurrence of defects is suppressed and the effect is sufficiently exerted in the present invention, the range of bonding conditions is widened, and applicability in manufacturing is improved.
【００２１】（第二実施例）被覆樹脂に含まれる不飽和
結合を持つ樹脂の代わりに、ハロゲン捕捉材として、半
田付け温度付近でハロゲンを吸着する性質を有する無機
材料を用いた場合でも、やはり同様の効果がある（ここ
では無機イオン交換体IXE-700 の粉末、東亜合成化学製
を用いた）。(Second Embodiment) Even when an inorganic material having a property of adsorbing halogen at a soldering temperature is used as a halogen capturing material instead of the resin having an unsaturated bond contained in the coating resin, It has the same effect (here, the powder of inorganic ion exchanger IXE-700, manufactured by Toagosei Kagaku) was used.
【００２２】この無機材料粉末は、不飽和結合をもつ樹
脂と同様に導体膜被覆保護樹脂と混合し、厚膜導体１に
必要に応じた前述のような各手法で塗布して被覆層７と
し、はんだ付け後にやはり溶剤で除去、洗浄する。This inorganic material powder is mixed with a conductor film coating protective resin in the same manner as a resin having an unsaturated bond, and is applied to the thick film conductor 1 by each of the above-mentioned methods as required to form the coating layer 7. After soldering, remove and wash with solvent.
【００２３】樹脂に含める無機材料粉末の含有量は、上
記の無機イオン交換体の場合、およそ30〜80重量％ぐら
い、望ましくは40〜60重量％が適量であることを確認し
た。30％以下では効果が認められず、80％以上では除去
の際に残留してしまうためにボンディングが不良であっ
た。なお、樹脂にこのような無機材料が多量に含有され
ていても、後工程の溶剤で完全に除去されてしまう上、
他の部分にショート等の弊害を生じる物質ではないの
で、なんら問題はない。It has been confirmed that the content of the inorganic material powder contained in the resin is about 30 to 80% by weight, preferably 40 to 60% by weight in the case of the above inorganic ion exchanger. If it is less than 30%, no effect is observed, and if it is more than 80%, it remains because it remains during the removal, resulting in defective bonding. Even if the resin contains a large amount of such an inorganic material, it will be completely removed by the solvent in the subsequent step.
Since it is not a substance that causes harmful effects such as short circuits in other parts, there is no problem.
【００２４】以上のように、従来なんの処置も施さなか
ったために生じていた汚染によるボンディング不良を、
大がかりな装置等を必要とせず、また従来のボンディン
グ装置を変更することなく、ほぼ完全に不良をなくすこ
とができ、製造が容易で回路基板を用いた装置の信頼性
を高めることができた。As described above, the bonding failure due to contamination, which has been caused by the fact that no measures have been taken conventionally,
It was possible to eliminate defects almost completely, without requiring a large-scale device or the like, and without changing the conventional bonding device, and it was easy to manufacture and the reliability of the device using a circuit board could be improved.
【図１】本発明を適用したハイブリッドＩＣの模式的断
面図および不飽和結合がハロゲン元素(Br)を捕捉する説
明図。FIG. 1 is a schematic cross-sectional view of a hybrid IC to which the present invention is applied and an explanatory view of trapping a halogen element (Br) by an unsaturated bond.
【図２】本発明と従来の工程の比較図。FIG. 2 is a comparison diagram of the present invention and a conventional process.
【図３】被覆樹脂に含まれる不飽和結合を有する樹脂の
不飽和結合数、含有量を変えて、表面汚染防止およびボ
ンディング特性を確かめた結果図。FIG. 3 is a view showing the results of confirming the surface contamination prevention and the bonding characteristics by changing the unsaturated bond number and content of the resin having an unsaturated bond contained in the coating resin.
【図４】本発明と従来の厚膜導体の表面の拡大模写図。FIG. 4 is an enlarged copy drawing of the surfaces of the present invention and a conventional thick film conductor.
【図５】アルミボンディング条件の評価図[Figure 5] Evaluation diagram of aluminum bonding conditions
１ 厚膜導体（ワイヤボンディング(W/B) 部） ２ セラミック回路基板 ３ セラミック基板 ４ 半導体素子 ５ 配線導体膜 ６ 半田 ７ 被覆層 1 Thick film conductor (wire bonding (W / B) part) 2 Ceramic circuit board 3 Ceramic substrate 4 Semiconductor element 5 Wiring conductor film 6 Solder 7 Cover layer
Claims (5)
工程を有し、該回路基板上の導体と該回路基板外部の端
子とをアルミワイヤボンディングする工程を有する回路
基板の製造方法において、 該端子を半田付けする工程前に、前記導体よりなるボン
ディング用電極を被覆部材で覆う被覆工程を有すること を特徴とする回路基板の製造方法であって、前記被覆部
材が半田ペーストのフラックス材の洗浄液に溶解可能な
第一樹脂を主成分とし、 第一樹脂にはんだ付け材に含まれるハロゲンを捕捉して
固定するハロゲン捕捉材が混合されていることを特徴と
する回路基板の製造方法。1. A method of manufacturing a circuit board, comprising the step of soldering an element to be mounted on the circuit board, and the step of aluminum wire bonding a conductor on the circuit board and a terminal outside the circuit board, Before the step of soldering the terminals, there is a coating step of coating the bonding electrode made of the conductor with a coating member, wherein the coating member is a flux material of a solder paste. A method for manufacturing a circuit board, comprising a first resin as a main component which is soluble in a cleaning liquid, and a halogen capturing material for capturing and fixing halogen contained in a soldering material is mixed with the first resin.
部構造中に不飽和結合を有する第二樹脂より成り、その
不飽和結合が樹脂一分子あたり１個以上、５個以下であ
り、 前記第二樹脂の添加量が２％以上４０％未満であること
を特徴とする請求項１記載の回路基板の製造方法。2. The halogen scavenger comprises a second resin having an unsaturated bond in at least a partial structure thereof, and the unsaturated bond is 1 or more and 5 or less per resin molecule, The method for manufacturing a circuit board according to claim 1, wherein the addition amount of the two resins is 2% or more and less than 40%.
ラックス材の洗浄液に溶解可能な樹脂と、半田付け温度
で陰イオンを吸着する性質を有する無機材料から成るこ
とを特徴とする請求項１記載の回路基板の製造方法。3. The halogen trapping material is made of a resin soluble in a cleaning liquid for a flux material of a solder paste and an inorganic material having a property of adsorbing anions at a soldering temperature. Circuit board manufacturing method.
あることを特徴とする請求項１乃至３に記載の回路基板
の製造方法。4. The method of manufacturing a circuit board according to claim 1, wherein the second resin is an acrylic resin monomer.
であることを特徴とする請求項１乃至４に記載の回路基
板の製造方法。5. The method for manufacturing a circuit board according to claim 1, wherein the inorganic material is a ceramic ion exchanger.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33385794A JP3463386B2 (en) | 1994-12-16 | 1994-12-16 | Circuit board manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33385794A JP3463386B2 (en) | 1994-12-16 | 1994-12-16 | Circuit board manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08172110A true JPH08172110A (en) | 1996-07-02 |
| JP3463386B2 JP3463386B2 (en) | 2003-11-05 |
Family
ID=18270725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33385794A Expired - Fee Related JP3463386B2 (en) | 1994-12-16 | 1994-12-16 | Circuit board manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3463386B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09293744A (en) * | 1996-02-29 | 1997-11-11 | Denso Corp | Mounting method of electronic part |
| JP2007266212A (en) * | 2006-03-28 | 2007-10-11 | Kyocera Corp | Method of manufacturing surface mounting module |
-
1994
- 1994-12-16 JP JP33385794A patent/JP3463386B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09293744A (en) * | 1996-02-29 | 1997-11-11 | Denso Corp | Mounting method of electronic part |
| JP2007266212A (en) * | 2006-03-28 | 2007-10-11 | Kyocera Corp | Method of manufacturing surface mounting module |
| JP4684149B2 (en) * | 2006-03-28 | 2011-05-18 | 京セラ株式会社 | Manufacturing method of surface mount module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3463386B2 (en) | 2003-11-05 |
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