JP2012124427A - Manufacturing method of electronic component and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic circuit with connection terminals capable of securing excellent electric connection with an electrode terminal and excellent connection with an external circuit substrate even if an aspect ratio of an opening of a semiconductor resist film increases because a width of the electrode terminal formed on a surface of the electronic circuit becomes narrow.SOLUTION: A manufacturing method of an electronic component comprises: a resist film formation step of forming a solder resist film 13 having an opening 14 in an electrode terminal 12 on a surface of a substrate 11 on which the electrode terminal 12 was formed; a paste application step of applying a solder paste 5 to the portion on which the opening 14 of the solder resist film 13 was formed; and a reflow step of melting the applied solder pate 5. The solder paste 5 includes a solder particle having a smaller particle size than the opening 14 of the solder resist film 13 and a reinforcing resin component which is solidified to serve as a reinforcing layer 7 after the reflow step.

Description

  The present invention relates to a method of manufacturing an electronic component in which a connection terminal connected to another circuit board or the like is formed on an electrode terminal formed on a substrate, and a semiconductor device which is an electronic component is stacked on another semiconductor device. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a stacked type semiconductor device, and more particularly, a method for manufacturing an electronic component and a method for manufacturing a semiconductor device provided with a connection terminal with which electrical connection is ensured and fixing strength is improved even when the electrode terminal area is reduced. About.

  In a surface-mount type semiconductor device such as a ball grid array (BGA) or a chip size package (CSP), solder balls are often used as connection terminals between a semiconductor element and a substrate constituting the package.

  Here, a conventional method for manufacturing a semiconductor device in which connection terminals made of solder balls are formed on electrode terminals formed on the surface of a semiconductor element will be described with reference to FIGS.

  First, an opening 114 is formed at a position where the electrode terminal 112 is formed on the surface where the electrode terminal 112 of the semiconductor element 111 including various elements (not shown) formed by general semiconductor technology and circuit wiring is formed. Then, the semiconductor device body 101 shown in FIG. 22 on which the solder resist film 113 is formed is obtained.

  Next, a flux 118 is supplied onto the electrode terminal 112 exposed through the opening 114 formed in the solder resist film 113 of the semiconductor device body 101. For the supply of the flux 118, for example, a screen printing method using a screen 115 in which a through hole 116 is formed corresponding to the position of the opening 114 of the solder resist film 113 and a squeegee 117 as shown in FIG. Can do.

  Further, for example, as shown in FIG. 23, a method is adopted in which the transfer device 121 provided with a plurality of transfer pins 122 with the flux 118 transferred to the tip is moved up and down to supply the flux 118 to the position of the opening 114. In some cases.

  In this way, as shown in FIG. 24, the semiconductor device body 101 is obtained in which the flux 118 is applied to the opening 114 formed in the solder resist film 113 so as to cover the electrode terminal 112.

  After that, solder balls 124 are arranged corresponding to the positions of the openings 114 of the solder resist film 113 on the electrode terminals 112 where the flux 118 is formed.

  For example, as shown in FIG. 25, the solder balls 124 are arranged using a solder ball adsorption jig 123 that adsorbs a plurality of solder balls 124 corresponding to the arrangement interval of the electrodes 112 on the semiconductor substrate 101. The solder ball adsorption 123 jig picks up a necessary number of solder balls 124 from a container (not shown) containing a large number of solder balls 124 and positions the solder balls 124 so as to overlap with the corresponding flux 118 forming positions. Then, the holding of the solder balls 124 is released, and each solder ball 124 is dropped onto the position where the flux 118 is formed.

  Further, as shown in FIG. 26, a mask 125 having an opening corresponding to the opening 114 of the solder resist film 113 is placed on the upper side of the semiconductor device body 101, and the mask 125 is placed with a large number of solder balls 124 placed thereon. It is possible to use a method of swinging, dropping the solder ball 124 from the opening of the mask 125 to the position of the opening 114 of the solder resist film 113, and mounting the solder ball 124 at a desired position.

  In this way, the solder balls 124 are mounted on the respective electrode terminals 112 of the semiconductor device main body 101 via the flux 118. This state is shown in FIG.

  Next, through a reflow process at a temperature at which part of the solder balls 124 is melted, the solder balls 124 and the electrode terminals 112 are soldered as shown in FIG. Thus, the semiconductor device main body 500 in which the connection terminals are formed is obtained.

  Thereafter, as shown in FIG. 29, the semiconductor device main body 500 is immersed in a cleaning liquid 127 such as an organic solvent or pure water contained in a container 126, and the flux 118 adhering to the periphery of the solder ball 124. Remove the residue.

  In this way, a conventional semiconductor device body 500 shown in FIG. 30 in which solder balls as connection terminals are arranged on the electrode terminals of the semiconductor substrate is obtained.

  In recent years, with the demand for high-density mounting of semiconductor devices, the number of terminals of semiconductor elements has increased and the terminal pitch has been reduced. As a result, the width of electrode terminals formed on semiconductor elements has been reduced. The diameter of solder balls used for connection terminals has also been reduced. Furthermore, the wiring of the semiconductor device is becoming more difficult, and the area of the wiring electrode of the external substrate such as a package substrate to which the semiconductor device main body is connected via the solder ball has been reduced.

  In order to cope with such poor mounting of solder balls caused by narrowing of the electrode terminal pitch or solder ball diameter, solder balls covered with a resin coating layer are used, and the coating layer is temporarily formed in a reflow process. A technique relating to a connection terminal for an electronic component has been proposed in which the solder ball is solidified after being melted to reinforce the solder ball, thereby preventing the drop (see Patent Document 1).

JP 2007-115858 A

  The conventional method for manufacturing a semiconductor device cannot sufficiently cope with the narrowing of the width of the electrode terminal formed in the semiconductor element and the accompanying decrease in the solder ball diameter. In particular, when the width of the electrode terminal formed in the semiconductor element is reduced, the ratio of the thickness of the solder resist film to the width of the opening portion corresponding to the width of the electrode terminal at the opening portion of the solder resist film. As a result, the aspect ratio becomes large, and the solder ball may not contact the electrode terminal.

  In order to eliminate such poor contact between the solder ball and the electrode terminal, it is conceivable to further reduce the solder ball diameter. However, when the solder ball diameter becomes too small, the solder ball is connected. It is assumed that the contact area with the wiring electrode on the external substrate side becomes small and it is difficult to obtain sufficient electrical continuity. In addition, when the solder ball diameter is reduced, in the case of a stacked semiconductor device in which a plurality of semiconductor devices are stacked, the interval between the two semiconductor devices becomes narrow, and both of them are undesirably in contact with each other. Inconvenience such as end will occur.

  Further, the disadvantage caused by the increase in the aspect ratio of the opening of the solder resist film described above is the use of the technique described in Patent Document 1 for reinforcing the fixation of the solder ball with a resin film coated on the solder ball. However, it cannot be resolved.

  Therefore, in view of the above problems, the present invention provides a good electrical connection with the electrode terminal even when the width of the electrode terminal formed on the surface of the electronic circuit is reduced and the aspect ratio of the opening of the solder resist film is increased. It is an object of the present invention to provide a method for manufacturing an electronic circuit having a connection terminal that can secure a connection and realize a good connection with an external circuit board. It is another object of the present invention to provide a method for manufacturing a semiconductor device in which a connection electrode having a height that does not cause inconvenience even when used in a stacked semiconductor device.

  In order to solve the above-described problems, an electronic circuit manufacturing method according to the present invention includes a resist film in which a solder resist film having an opening in the electrode terminal portion is formed on the surface of a substrate on which an electrode terminal is formed. A forming step; a paste applying step of applying a solder paste to a portion where the opening of the solder resist film is formed; and a reflow step of melting the applied solder paste, wherein the solder paste includes the solder It contains solder particles having a particle size smaller than the opening of the resist film, and a reinforcing resin component that solidifies after the reflow step and becomes a reinforcing layer.

  According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device by stacking a semiconductor device, which is an electronic component manufactured by the method of manufacturing an electronic component according to the present invention, on another semiconductor device. Features.

  In the manufacturing method of the electronic component of the present invention, since the solder paste containing solder particles having a particle size smaller than the opening is applied to the opening of the solder resist film, the solder particles enter the opening of the solder resist film, It can be in contact with the electrode terminal. In addition, since the solder paste contains a reinforcing resin component that becomes a reinforcing layer after the reflow process, an electrical component having a connection terminal firmly secured and securely connected to the electrode terminal is manufactured. can do.

  In addition, the semiconductor device manufacturing method of the present invention is a connection device having a predetermined height even when the width of the electrode terminal is narrow by stacking the semiconductor device, which is an electronic component according to the present invention, on another semiconductor device. Terminals can be formed, and problems caused by undesired contact between stacked semiconductor devices can be effectively avoided.

It is a schematic sectional drawing which shows the example of the paste application | coating process in the manufacturing method of the electronic component concerning the 1st Embodiment of this invention. It is a schematic sectional drawing which shows the state after the paste application | coating process in the manufacturing method of the electronic component concerning the 1st Embodiment of this invention. It is a schematic sectional drawing which shows the state after the reflow process in the manufacturing method of the electronic component concerning the 1st Embodiment of this invention. It is a schematic sectional drawing which shows joining of the semiconductor device main-body part and the external circuit board in the manufacturing method of the electronic component concerning the 1st Embodiment of this invention. It is a schematic sectional drawing which shows the 1st example of the paste application | coating process in the manufacturing method of the electronic component concerning the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the 2nd example of the paste application | coating process in the manufacturing method of the electronic component concerning the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the state after the paste application | coating process in the manufacturing method of the electronic component concerning the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the 1st example of the solder ball supply method in the manufacturing method of the electronic component concerning the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the 2nd example of the solder ball supply method in the manufacturing method of the electronic component concerning the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the state after the solder ball is supplied in the manufacturing method of the electronic component concerning the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the state after the reflow process in the manufacturing method of the electronic component concerning the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the process of removing the flux residue in the manufacturing method of the electronic component concerning the 2nd Embodiment of this invention. It is a schematic diagram which shows the cause of the solder ball connection defect generation in the manufacturing method of the conventional semiconductor device. It is a figure which shows the incidence rate of the solder ball connection defect in the manufacturing method of the conventional semiconductor device. It is a schematic sectional drawing which shows the 1st process of the 1st manufacturing method of the laminated | stacked semiconductor device concerning the 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the next process of the 1st manufacturing method of the lamination type semiconductor device concerning the 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the state by which the semiconductor device was laminated | stacked in the 1st manufacturing method of the lamination type semiconductor device concerning the 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the further next process of the 1st manufacturing method of the laminated | stacked semiconductor device concerning the 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the first process of the 2nd manufacturing method of the laminated type semiconductor device concerning the 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the next process of the 2nd manufacturing method of the lamination type semiconductor device concerning the 3rd Embodiment of this invention. It is sectional drawing which shows schematic structure of the laminated | stacked semiconductor device concerning the 3rd Embodiment of this invention. It is a schematic sectional drawing which shows the 1st method of apply | coating the flux in the manufacturing method of the conventional semiconductor device. It is a schematic sectional drawing which shows the 2nd method of apply | coating the flux in the manufacturing method of the conventional semiconductor device. It is a schematic sectional drawing which shows the state after the flux application | coating in the manufacturing method of the conventional semiconductor device. It is a schematic sectional drawing which shows the 1st method of supplying the solder ball in the manufacturing method of the conventional semiconductor device. It is a schematic sectional drawing which shows the 2nd method of supplying the solder ball in the manufacturing method of the conventional semiconductor device. It is a schematic sectional drawing which shows the state in which the solder ball was supplied in the manufacturing method of the conventional semiconductor device. It is a schematic sectional drawing which shows the state after the reflow in the manufacturing method of the conventional semiconductor device. It is a schematic sectional drawing which shows the process of wash | cleaning the flux residue in the manufacturing method of the conventional semiconductor device. It is sectional drawing which shows schematic structure of the conventional semiconductor device.

  The method of manufacturing an electronic component according to the present invention includes a resist film forming step of forming a solder resist film having an opening in the electrode terminal portion on the surface of the substrate having electrode terminals formed on the surface; A paste applying step of applying a solder paste to a portion where the opening is formed; and a reflow step of melting the applied solder paste, wherein the solder paste is larger than the size of the opening of the solder resist film. Also includes solder particles having a small particle size and a reinforcing resin component that solidifies after the reflow step and becomes a reinforcing layer.

  In the method of manufacturing an electronic component according to the present invention, the solder paste applied to the opening of the solder resist film in the solder paste applying step includes solder particles having a particle size smaller than the size of the opening of the solder resist film. . For this reason, even when the width of the electrode terminal is narrow and the aspect ratio of the opening of the solder resist film is large, the solder particles can enter the opening and reliably contact with the electrode terminal. Moreover, since the solder paste contains a reinforcing resin component that becomes a reinforcing layer after the reflow process, the connection terminals formed after the reflow process can be firmly fixed to the surface of the electronic component. For this reason, even when the width of the electrode terminal formed on the surface of the electronic component is narrowed, an electronic component having a connection terminal firmly secured and firmly fixed is manufactured. be able to.

  In the method for manufacturing an electronic component, it is preferable that the solder particles in the solder paste aggregate to form a connection terminal by the reflow step. In this way, it is not necessary to arrange the solder balls at predetermined positions, the manufacturing process can be simplified, and an electronic component having a connection terminal electrically connected to the electrode terminal can be easily and reliably obtained. Can be manufactured.

  Moreover, it is preferable to provide the ball | bowl arrangement | positioning process of arrange | positioning the metal ball which forms the terminal for a connection in the said opening part of the said solder resist between the said paste application | coating process and the said reflow process. By doing in this way, the connection terminal which has the solder ball with which the electrical connection with the electrode terminal was ensured can be obtained.

  Furthermore, it is preferable that an aspect ratio which is a ratio of a thickness of the solder resist film to a width of the opening portion in the opening of the solder resist is 0.20 or more. An electrical connection can be reliably obtained even for an electrode terminal having a narrow width where it is difficult to obtain an electrical connection between the solder ball and the electrode terminal.

  In addition, it is preferable to manufacture a stacked semiconductor device by stacking a semiconductor device, which is an electronic component manufactured by the manufacturing method of the present invention, on another semiconductor device. By doing in this way, the manufacturing method of the semiconductor device which can avoid that the semiconductor device laminated | stacked and the semiconductor device laminated | stacked contact can be obtained.

  Hereinafter, an electronic component manufacturing method of the present invention will be described with reference to the drawings.

  In addition, each figure referred below demonstrates only the main member required in order to demonstrate this invention simplified, among the members which comprise the electronic component manufactured with the manufacturing method of this invention for convenience of explanation. Is. Therefore, the electronic component manufactured by the manufacturing method of the present invention can include arbitrary constituent members that are not shown in the referenced drawings.

  Moreover, the dimension of the member in each figure does not necessarily faithfully represent the dimension of the actual component member, the dimension ratio of each member, and the like.

(First embodiment)
As a first embodiment of the electronic component manufacturing method of the present invention, a case where the electronic component is a semiconductor device will be described as an example. In the first embodiment, a method for forming a connection terminal for connecting a semiconductor device as an electronic component to an external substrate using a solder paste containing solder particles and a reinforcing resin component will be described.

  FIG. 1 is a schematic cross-sectional view illustrating a state of a paste application process in the method for manufacturing a semiconductor device according to the present embodiment.

  The semiconductor device manufacturing method of the present embodiment is a substrate on which electronic circuits including various elements and wirings (not shown) are formed through a thin film forming process, an implantation / diffusion process, etc., which are normal semiconductor element manufacturing techniques. A resist film coating step of coating a solder resist film 13 on the surface of the semiconductor substrate 11. In this resist film forming step, the electrode terminal 12 is formed on the electrode terminal 12 which is a terminal for connecting an electronic circuit formed on the semiconductor element 11 formed on the surface of the semiconductor element 11 and an external substrate such as a package substrate. The semiconductor device body 1 is obtained by applying a solder resist film 13 having an opening 14 that exposes most of the film, and the opening 14 is formed by using a general photolithography technique. Since it can do, detailed description including illustration in this specification is omitted.

  As the solder resist for forming the solder resist film 13, a thermosetting epoxy resin, a photosensitive epoxy resin, or the like can be used, and the thickness of the solder resist film 13 is 40 μm as an example.

  In FIG. 1, the semiconductor device body 1 including the solder resist film 13 having the opening 14 formed in the electrode terminal 12 includes solder particles and a reinforcing resin component in the opening 14 of the solder resist film 13. A state in which the solder paste 5 is applied is shown.

  As shown in FIG. 1, the solder paste 5 has a predetermined through hole 3 formed in a portion to which the solder paste 5 is applied, that is, a portion above the electrode terminal 12 and corresponding to the opening 14 of the resist film 13. The film is applied at a predetermined position by a screen printing method using the screen 2 and the squeegee 4.

  The solder paste 5 contains solder particles and a reinforcing resin component.

  Solder particles contained in the solder paste 5 used in the method of manufacturing a semiconductor device according to the present embodiment are smaller than the opening diameter that is the size of the opening 14 formed in the solder resist film 13 to which the solder paste 5 is applied. It has a diameter. Further, the solder paste 5 can contain a metal component together with the solder particles, and can contain a flux component.

  Specifically, the solder paste 5 can be obtained by mixing a metal component containing solder particles into a thermosetting adhesive as a reinforcing resin component.

  In this embodiment, a thermosetting flux containing a thermosetting resin and a solid resin as a thermosetting adhesive and having an active action of removing the solder oxide film is used. Solid resin is solid at normal temperature and has the property of changing to a liquid state upon heating. When heated during the subsequent reflow process, it improves the fluidity of the adhesive component and solidifies after cooling to reinforce the resin. It is used as a plasticizer having a function of increasing the strength of the part.

  As the solder particles of the solder paste 5, so-called lead-free solder that does not contain a lead component is employed. In addition, assuming that a semiconductor element whose heating temperature in the reflow process is desired to be set low is used, for example, Sn (tin) -Bi (bismuth) solder, liquidus temperature 139 ° C. Is selected. Moreover, the diameter of the solder particles of the solder paste 5 used in this embodiment is, for example, about 5 μm to 30 μm.

  Solder strength can be improved by adding Ag (silver) to the Sn-Bi solder particles at a blending ratio of 1 wt% to 3 wt%. The ratio of the solder particles to the entire solder paste 5 is, for example, in the range of 70 wt% to 92 wt%.

  In addition to Ag (silver), Pd (palladium), Au (gold), or the like can be used as the metal component other than the solder particles contained in the solder paste 5, and these metals are made into a foil shape. By mixing the metal powder at a blending ratio of 0.5 wt% to 10 wt%, the solder joint property can be improved.

  These metal components that can be included in the solder paste 5 have a melting point higher than the melting point of the solder used, and do not generate an oxide film in the atmosphere. Also, since the solder component is a material that easily wets along the surface in a molten state where the solder particles are melted, the molten solder is used as a core of the contained metal powder during the soldering process in the reflow process. It has the effect of agglomerating and improving the wettability of the solder.

  The solid resin contained in the solder paste 5 is selected in such a combination that the liquidus temperature of the solder is equal to or higher than the softening temperature of the solid resin. By selecting such a combination, there is an advantage that the flow of molten solder is prevented from being hindered by the resin component in the solder paste 5 in the reflow process, and good solder bonding can be performed.

  The thermosetting adhesive component contained in the solder paste 5 used in the method of manufacturing a semiconductor device according to the present embodiment includes, as a basic composition, a main component containing epoxy as a component, a curing agent that thermally cures the main component, and a curing accelerator. The structure includes an activator for removing the oxide film of the solder, a plasticizer made of a thermoplastic solid resin, and a solvent.

  As specific examples of the types and blending ratios of each component, first, as a main agent, hydrogenated bisphenol A type epoxy resin (30 wt% to 45 wt%), as a curing agent, methyltetrahydrophthalic anhydride (30 wt% to 45 wt%), curing As an accelerator, 2-phenyl 4-methyl 5-hydroxymethylimidazole (1 wt% to 2 wt%), as an activator, m-hydroxybenzoic acid (3 wt% to 10 wt%), and as a plasticizer, an alkylphenol-modified xylene resin (2 wt%). % To 20 wt%), and butyl carbitol (0 wt% to 5 wt%) can be used as a solvent.

  As each component described above, the following substances can be selected as alternative substances.

  First, as the main agent, in place of the hydrogenated bisphenol A type epoxy resin, 3,4 epoxy cyclohexenylmethyl-3, '4' epoxy cyclohexene carboxylate, bisphenol F type epoxy resin or bisphenol A type epoxy resin can be selected. is there.

  As the curing agent, methylhexahydrophthalic anhydride is used instead of methyltetrahydrophthalic anhydride, and as the curing accelerator, 2-phenyl-4-methyl-5-hydroxymethylimidazole is used instead of 2-phenyl-4,5-dihydroxy. Methylimidazole can be selected.

  As the activator, mesaconic acid is used instead of m-hydroxybenzoic acid, as the plasticizer, it replaces with alkylphenol-modified xylene resin, as a fatty acid amide or highly polymerized rosin, and as the solvent, replaces with butyl carbitol. Thus, methyl carbitol can be selected.

  Even when these substitutable substances are used as the respective components, the respective compounding ratios can be the same as the numerical values shown in the above-described specific examples.

  Moreover, since the acid anhydride used as a curing agent has an active action of removing the oxide film by itself, the blending of the activator may be omitted.

As a thermosetting resin, a material containing any one of acrylic, urethane, phenol, urea, melamine, unsaturated polyester, amine, and silicon as the main agent, as well as epoxy. Can be selected.

  Solid resins used as plasticizers include terpene resin, phenol resin, xylene resin, urea resin, melanin resin, amorphous rosin, imide resin, olefin resin, acrylic resin, amide resin, polyester resin, styrene, polyimide, fatty acid At least one selected from the derivatives is mixed in the thermosetting resin.

  When selecting these solid resins, by selecting a solid resin that is compatible with the main agent in relation to the components of the main agent, when mixing the solid resin into the main agent, A liquid resin having fluidity can be realized without using a solvent containing a gas component. By doing in this way, it becomes possible to reduce the environmental load by use of a solvent, such as adhesion of the gas component in the reflow apparatus by the gas vaporized from a solvent, and contamination of the working environment in a factory.

  FIG. 2 shows a state in which the solder paste 5 is applied on the opening 14 formed in the solder resist film 13 by the screen printing method shown in FIG. In the semiconductor device manufacturing method of this embodiment, the solder paste 5 is used to form connection terminals for connecting the semiconductor device body 1 to an external substrate such as a package substrate. Therefore, the application height of the solder paste 5 can be increased. Preferably, the opening width of the opening 14 formed in the solder resist film 13 is preferably about 1 to 3 times the opening width. For example, when the opening width of the opening 14 is 150 μm, the height of the solder paste 5 after application is preferably about 150 μm to 450 μm.

  Alternatively, it is preferable that the opening size of the mask 2 is increased to increase the application width of the solder paste 5, which is about 1 to 3 times the opening width of the opening 14 formed in the solder resist film 13. It is preferable. For example, when the opening width of the opening 14 is 150 μm, the application width of the solder paste 5 after application is preferably about 150 μm to 450 μm.

  Thereafter, the semiconductor device body 1 to which the solder paste 5 is applied is subjected to a reflow process in which the solder paste 5 is heated to about 150 to 250 ° C., so that the solder paste 5 is once melted and then the solder particles are condensed as shown in FIG. The connection terminal 6 is formed. The main component of the connection terminal 6 is solder, and the connection terminal 6 can be made close to a ball shape through a reflow process under a preferable condition.

  In the reflow process, the reinforcing resin component contained in the solder paste 5 spreads around the connection terminals 6, and the solder resist film 13 and the connection terminals 6 are fixed to reinforce the joint portion of the connection terminals 6. Layer 7 is formed.

  As shown in FIG. 4, the solder device main body 1 after the reflow process is connected to an external substrate 15 such as a package substrate in which electrode pads 16 are formed at positions corresponding to the connection terminals 6, and the semiconductor device 100. Is obtained.

  According to the method of manufacturing a semiconductor device according to the present embodiment, the solder paste 5 containing the solder particles and the reinforcing resin component is applied to the opening 14 of the solder resist film 13 above the electrode portion 12 by the paste application process. Are melted and condensed in a reflow process to form connection terminals 6 for connecting the electrode terminals 12 of the semiconductor device body 1 and the electrode pads 16 of the external substrate 15. For this reason, even when the opening diameter of the opening 14 formed in the solder resist film 13 is small, the solder particles in the solder paste 5 having a particle diameter smaller than the opening diameter come into contact with the electrode terminal 12, resulting in poor bonding. Occurrence can be suppressed. Further, since the reinforcing resin component contained in the solder paste 5 remains around the connection terminal 6 and becomes the reinforcement layer 7, the strength of the connection terminal 6 can be improved.

  Thus, according to the manufacturing method of the semiconductor device of the present embodiment, even when the width of the electrode terminal 12 formed in the semiconductor element 11 is narrowed, the electrode pad 16 formed on the external substrate 15 and the semiconductor element 11. Thus, the semiconductor device 100 that can ensure good electrical connection with the electrode terminal 12 can be obtained.

(Second Embodiment)
Next, as a second embodiment of the electronic component manufacturing method of the present invention, a case where the electronic component is a semiconductor device will be described by way of example as in the first embodiment. In the second embodiment, a method for forming a connection terminal for connecting a semiconductor device, which is an electronic component, to an external substrate using a solder paste containing solder particles and a reinforcing resin component and a solder ball will be described.

  FIG. 5 is a schematic cross-sectional view showing a state of a paste application process in the method for manufacturing a semiconductor device of this embodiment.

  As shown in FIG. 5, in the manufacturing method of the semiconductor device of this embodiment, as in the manufacturing method of the first embodiment described above, an electrode terminal is formed on the surface of the semiconductor element 11 by a resist film forming step (not shown). A solder resist film 13 having an opening 14 in the portion 12 is formed.

  Then, the particle diameter smaller than the opening diameter of the opening 14 is obtained by a screen printing method using a screen 21 and a squeegee 23 in which a through hole 22 is formed in the opening 14 in the opening 14 of the solder resist film 13. A solder paste 24 containing solder particles having a reinforced resin component is applied.

  The solder paste 24 used in the method for manufacturing a semiconductor device of this embodiment can be the same as the solder paste 5 described in the first embodiment.

  FIG. 6 is a diagram showing another method of the paste application process in the method for manufacturing the semiconductor device of the present embodiment. As shown in FIG. 6, as another method of applying the solder paste 24 to the opening 14 of the solder resist film 13, a transfer device 25 having a large number of transfer pins 26 having the solder paste 24 applied to the tip portion was used. A pin transfer method can be used.

  The screen printing method shown in FIG. 5 or the pin transfer method shown in FIG. 6, solder particles having a particle diameter smaller than the opening diameter of the opening portion 14 and the reinforcing resin are formed in the opening portion 14 of the solder resist film 13. FIG. 7 shows a state in which a solder paste 24 containing components is applied.

  In the semiconductor device manufacturing method of the present embodiment, the connection terminals for connecting the electrode terminals 12 of the semiconductor element 11 to an external circuit board are formed by supplying solder balls. In the first embodiment, the thickness of the solder paste 24 in the semiconductor device body 1 after the solder paste 24 coating step is smaller than the thickness of the coating film of the solder paste 5 shown in FIG. In the case of an electrode width of 150 μm of the same size, it is about 60 to 150 μm.

  For this reason, the thickness of the screen 21 used in the paste application process in the present embodiment is smaller than the thickness of the screen 2 used in the paste application process in the first embodiment.

  Next, a large number of solder balls 28 are accommodated by using solder ball adsorption jigs 27 formed so as to adsorb one solder ball at a position corresponding to the arrangement position of the electrode terminals 12 of the semiconductor element 11. The solder balls 28 used for the connection terminals of the semiconductor device main body are picked up from the container (not shown). Then, as shown in FIG. 8, after the solder ball suction jig 27 and the semiconductor device body 1 are aligned, the solder ball 28 held by the solder ball suction jig 27 is replaced with the electrode terminal 12 of the semiconductor element 11. Is formed, and corresponds to the opening 14 of the solder resist 13, and a ball placement step is performed to drop the solder paste 24 at the position where the solder paste 24 is formed in the paste application step.

  In addition to the method using the solder ball adsorption jig 27 shown in FIG. 8, the ball placement step for supplying the solder ball 28 to a predetermined position of the semiconductor device main body 1 includes the solder ball 28 as shown in FIG. A method is used in which a mask 29 having an opening formed at a predetermined position to be supplied is disposed above the semiconductor device body 1 and the solder ball 28 mounted on the mask 29 is dropped by swinging the mask 29. You can also.

  As the solder ball 28 used in the method for manufacturing a semiconductor device of this embodiment, a solder ball that has been conventionally used can be used as it is. The diameter is, for example, 250 μm, and the constituents are solder containing 96.5% tin, 3% silver, 0.5% copper, or solder containing 42% tin and 58% bismuth, or tin. For example, solder containing 42%, bismuth 57% and silver 1%.

  FIG. 10 shows a state in which the solder balls 28 are arranged on the solder paste 24 formed at the positions of the openings 14 of the solder resist film 13 in the paste application process.

  Thereafter, the solder paste 24 is melted and then agglomerated through a reflow process in which the semiconductor device body 1 on which the solder balls 28 are mounted as shown in FIG. 10 is heated at a predetermined temperature such as 150 to 250 degrees as an example. Thus, the semiconductor device main body 200 in which the connection terminals including the solder balls 28 in which the solder balls 28 are electrically connected to the electrode terminals 12 of the semiconductor element 11 can be obtained. At this time, the reinforcing resin component contained in the solder paste 24 is solidified to form the reinforcing film 30, whereby the solder ball 28 is firmly fixed to the electrode terminal 12 and the solder resist film 13. This state is shown in FIG.

  If necessary, as shown in FIG. 12, the semiconductor device body 200 to which the connection terminals including the solder balls 28 are fixed is applied to an organic solvent contained in the container 41 or a cleaning liquid 42 such as pure water. Immerse to remove flux residue, which is a surplus component.

  Thereafter, although not shown in the present embodiment, the semiconductor device body 200 can be connected to the external substrate 15 to obtain a semiconductor device as shown in FIG. 4 in the first embodiment.

  Thus, according to the manufacturing method of the semiconductor device according to the present embodiment, in the paste application process, the solder having a particle diameter smaller than the opening diameter of the opening 14 of the solder resist film 13 on the electrode terminal 12 of the semiconductor element 11. After applying the solder paste 24 containing particles, a solder ball 28 is supplied to the portion where the solder paste 24 is formed in a ball placement process. Therefore, a reliable electrical connection between the solder ball 28 constituting the connection terminal and the electrode terminal 12 can be achieved, and the reinforcing layer 30 can be formed by the reinforcing resin component contained in the solder paste 24. Can be firmly fixed. As described above, according to the method for manufacturing a semiconductor device of this embodiment, the connection failure of the semiconductor device body 200 including the connection terminals having the predetermined thickness and diameter by including the solder balls 28 is prevented. It can suppress and can manufacture easily and stably.

  Here, in the semiconductor device in which the connection terminal using the solder ball is formed by the conventional method, the cause and the condition of the electrical connection failure were examined by experiments.

  FIG. 13 is a partially enlarged cross-sectional view of a portion on which a solder ball constituting a connection terminal is mounted in a semiconductor device manufactured using the conventional method for manufacturing a semiconductor device described with reference to FIGS. is there.

  In the experiment, Sn-3Ag-0.5Cu (the unit of numerical value is wt%) is used as the solder ball 124, and the diameter 2r of the solder ball 124 is 2r = 0.25 mm and 2r = 0.20 mm. Two types of sizes were used.

  Further, the thickness h of the solder resist film 113 from the surface of the electrode terminal 112 is 0.03 mm, and the opening width w which is the size of the opening 114 formed in the solder resist film 113 is w = 0.15 mm, w = Three types of 0.20 mm and w = 0.25 mm were prepared.

  Then, after supplying the solder balls 124 under the same conditions, a reflow process under the same conditions is performed, and as a result, the solder balls 124 are not fixed to the electrode terminals 112 and dropped without being bonded. Then, it was counted as the solder ball bonding failure occurrence rate represented by the number of drops for all the solder balls 124.

  The experimental results are shown in FIG.

  As shown in FIG. 14, when the diameter 2r of the solder ball 124 is equal to or larger than the opening width w of the opening 114 of the solder resist film 113, the ratio of the thickness h to the opening width w of the resist film 113 in the opening 114 is shown. It was found that when the aspect ratio (h / w) expressed as “0.20” was 0.20, a bonding failure of the solder ball 124 occurred.

  In FIG. 13, when the diameter 2r of the solder ball 124 is 0.25 mm and the opening width w of the solder resist film is 0.15 mm, that is, h = 0.03 mm, the aspect ratio h / w is 0.20. Suppose that the center O of the solder ball 124 is located immediately above the center of the opening 114 of the solder resist film 113.

  At this time, as shown in FIG. 13, the distance OS between the center O of the solder ball 124 and the point S where the end of the opening 114 of the solder resist film 113 is in contact, the center O of the solder ball 124 and the lowermost portion B The distances OB are 0.125 mm in radius r. When the point on the radius OB of the solder ball 124 located at the height of the surface of the solder resist film 113 is A, the distance AS is 0.75 mm. .

  In this case, since the distance OA is determined to be 0.10 mm, the distance AB is 0.025 mm from the distance OB−the distance OA.

  On the other hand, since the thickness h of the solder resist film 113 on the electrode terminal 112 is 0.03 mm, when the point where the extension line of OB reaches the surface of the electrode terminal 112 is C, the distance AC is 0.03 mm, The distance AB is smaller than the distance AC. This indicates that, due to the thickness of the solder resist film 113, theoretically, the solder ball 124 disposed on the opening 114 of the solder resist film 113 does not contact the surface of the electrode terminal 112. Yes.

  Actually, since the solder ball melts in the reflow process, it is considered that the solder ball 124 may contact the electrode terminal 112 even when the distance AB in FIG. 13 is smaller than the distance AC. However, it is also conceivable that the mounting position of the solder ball 124 is not located immediately above the center of the opening 114 as shown in FIG. If the center position of the solder ball 124 is shifted in this way, the contact between the solder ball 124 and the electrode terminal 112 becomes more difficult. Therefore, when the aspect ratio is 0.20 or more, the solder ball 124 is connected. It can be considered that defects occur at a certain rate. This is because the aspect ratio h / w at the opening 114 of the solder resist film 113 is 0 regardless of whether the diameter 2r of the solder ball 124 is 0.25 mm or 0.20 mm. In the case of 20 or more, it is considered that the connection failure of the solder ball 124 has occurred.

  According to the method for manufacturing a semiconductor device in the present embodiment, the solder paste 24 containing solder particles having a particle size smaller than the size of the opening 14 of the solder resist film 13 is used on the electrode terminals 12 of the semiconductor element 11. Thus, even if the solder ball 124 is defectively bonded according to the conventional manufacturing method and the aspect ratio in the opening 14 of the solder resist film 13 is 0.20 or more, the solder ball 28 and the semiconductor element 11 are not bonded. The electrical connection with the connection electrode 12 can be made, and the solder ball 28 can be strongly fixed by the reinforcing resin component contained in the solder paste 24, so that the occurrence of poor bonding of the solder ball 28 is greatly suppressed. be able to.

  For this reason, in the manufacturing method of the semiconductor device shown in this embodiment, the width of the electrode terminal 12 formed in the semiconductor element 11 is small, and the aspect ratio in the opening 14 of the solder resist film 13 is as large as 0.20 or more. In particular, it can be said that the effect is exhibited.

(Third embodiment)
Next, as a third embodiment, a manufacturing method of a stacked semiconductor device in which another semiconductor device is stacked on the semiconductor device will be described with reference to the drawings.

  As a method for manufacturing a stacked semiconductor device, a pre-stack method and an on-board stack method are known.

  In the prestack method, first, as shown in FIG. 15, the semiconductor device 50 to be positioned on the lower side is mounted on the laminated jig 59. The lower semiconductor device 50 can be formed by a conventional method of manufacturing a semiconductor device. For example, a semiconductor element 52 is mounted on a resin substrate 51 such as a package substrate, and the semiconductor element 52 of the resin substrate 51. A connection electrode 53 to be connected to an external circuit board such as a motherboard is formed on the surface on which no solder is mounted, and a solder ball 54 is connected to the connection electrode 53 exposed from the solder resist 55. Yes. Further, on the upper surface in FIG. 15 where the semiconductor element 52 is mounted and another semiconductor device is stacked thereon, a terminal resist 56 and a solder resist film 57 in which an opening 58 is formed in the terminal electrode 56 portion. Is formed by coating.

  Subsequently, as shown in FIG. 16, a semiconductor device body 200, which is an upper semiconductor device, is stacked on the upper surface of the lower semiconductor device 50. The upper semiconductor device body 200 is manufactured by the method for manufacturing a semiconductor device according to the second embodiment, and the solder resist film 13 is formed at a position corresponding to the connection electrode 56 of the lower semiconductor device 50. A connection electrode including a solder ball 28 joined to the electrode terminal 12 through the opening 14 is provided.

  Next, as shown in FIG. 17, the lower semiconductor device 50 and the upper semiconductor device body 200 are joined by reflow while being mounted on the laminated jig 59 to obtain the laminated semiconductor device 300.

  Finally, as shown in FIG. 18, the stacked semiconductor device 300 in a stacked connection state is mounted on an external circuit board 61 such as a motherboard. At this time, a solder paste (not shown) is applied to the surface of the external circuit board 61 by a screen printing method or the like.

  In the case of the on-board stack method, as shown in FIG. 19, the lower semiconductor device 50 is stacked on an external circuit board 61 such as a mother board. Here, the lower semiconductor device 50 is the same as that used as the lower semiconductor device in the prestack method shown in FIG. A solder paste (not shown) is formed on the external substrate 61 by a screen printing method or the like.

  Subsequently, as shown in FIG. 20, the semiconductor device body 200 created in the second embodiment is mounted on the lower semiconductor device 50.

  Next, in a state where the lower semiconductor device 50 and the upper semiconductor device 200 are sequentially stacked and mounted on the external circuit board 61, they are fixed by reflow and electrical connection is obtained, and the stacked type shown in FIG. The semiconductor device 300 is obtained.

  The semiconductor device or the semiconductor device body manufactured by the method for manufacturing a semiconductor device of the present invention described as the first embodiment and the second embodiment is applied to the surface on which the electrode terminals of the semiconductor elements are formed. Since the solder paste containing solder particles having a particle size smaller than the size of the opening and the reinforcing resin component is applied to the opening of the solder resist film, the width of the electrode terminal formed in the semiconductor element is narrow. Even in such a case, the size of the connection terminal formed in the semiconductor device body can be set to a certain level or more.

  As described with reference to FIGS. 15 to 21, in the stacked semiconductor device 300 in which the semiconductor device 50 and the semiconductor device body 200 are stacked in two layers, the semiconductor device 50 is manufactured by the electronic component manufacturing method according to the present invention. By using the semiconductor device, which is an electronic component, as a semiconductor device stacked on another semiconductor device 50 or as a semiconductor device body, the distance between the two semiconductor devices can be kept at a predetermined value or more. Therefore, as a semiconductor device stacked on another semiconductor device, a conventional semiconductor device according to a conventional method for manufacturing a semiconductor device in which only a low connection terminal can be formed because a small solder ball must be used. If there is a defect in the semiconductor element mounted on the semiconductor device, which is caused by contact between the semiconductor element of the lower semiconductor device and the solder resist film of the upper semiconductor device body, which has occurred during or after the stacking process. It is possible to solve the problem that occurs.

  That is, in the stacked semiconductor device, the height of the connection terminal of the semiconductor device stacked on the upper side that defines the interval between the stacked semiconductor devices can be formed as a desired height. Depending on the mounting height of the semiconductor elements mounted on the semiconductor device, the height of the connection terminal can be freely formed higher than that, and the productivity of the stacked semiconductor device and the reliability after mounting Can be improved.

  As described above, the electronic component manufacturing method and the semiconductor device manufacturing method of the present invention have been described using the embodiments. However, the electronic component manufacturing method and the semiconductor device manufacturing method of the present invention are the same as those described in the above embodiments. It is not limited and various changes are possible.

  First, as a method for manufacturing an electronic component, the method for manufacturing a semiconductor device has been described as an example. However, the method for manufacturing an electronic component according to the present invention includes various electronic devices having connection terminals connected to other circuit boards and the like. For example, it can be applied as a method for manufacturing various circuit boards on which electronic circuits are mounted on the surface.

  In the stacked semiconductor device, the semiconductor element of the lower semiconductor device may be covered with a mold resin, or the semiconductor elements in the mold resin may be electrically and physically connected by wire bonding. Further, a flip-chip connected semiconductor device without mold resin can be used.

  The stacked semiconductor device is not limited to a two-layer structure in which two semiconductor devices are stacked, and may be a multilayer stacked semiconductor device having three or more layers. In the case of a multi-layered semiconductor device, a semiconductor device in which a connection terminal is formed on a semiconductor device arranged above the second layer or more other than the lowest layer by the electronic component manufacturing method of the present invention When the apparatus or the semiconductor device main body is used, the advantage is particularly exhibited.

  In the above embodiment, the case where the solder particles and the solder balls are used has been described. However, as a substitute for the solder and the solder balls, it may be possible to use metal particles and metal balls other than the solder. In addition, for example, a shape other than the illustrated ball shape (spherical shape), for example, a flake shape may be used.

  As described above, the method of manufacturing an electronic component according to the present invention is connected to other circuit boards and the like including a surface mount type semiconductor device such as a ball grid array (BGA) and a chip size package (CSP). The present invention can be applied as a method for manufacturing an electronic component having a connection terminal.

  The method for manufacturing a semiconductor device according to the present invention is particularly useful as a method for manufacturing a stacked semiconductor device such as a package on package (POP).

1 Semiconductor device body (semiconductor device)
6 Electrode for connection 7 Reinforcing layer 11 Semiconductor substrate (substrate)
12 Connection electrode 13 Solder resist film 14 Opening

Claims (5)

A resist film forming step of forming a solder resist film having an opening in the electrode terminal portion on the surface of the substrate having electrode terminals formed on the surface;
A paste application step of applying a solder paste to a portion where the opening of the solder resist film is formed;
A reflow step of melting the applied solder paste,
The electronic component, wherein the solder paste includes solder particles having a particle size smaller than the size of the opening of the solder resist film, and a reinforcing resin component that solidifies after the reflow step and becomes a reinforcing layer Manufacturing method.   The method of manufacturing an electronic component according to claim 1, wherein the solder particles in the solder paste are aggregated to form a connection terminal by the reflow process.   2. The method of manufacturing an electronic component according to claim 1, further comprising a ball placement step of placing a metal ball forming a connection terminal in the opening of the solder resist between the paste application step and the reflow step.   4. The electron according to claim 1, wherein an aspect ratio, which is a ratio of a width of the opening portion to a thickness of the solder resist film, in the opening of the solder resist is 0.20 or more. 5. A manufacturing method for parts.   6. A semiconductor device, comprising: a semiconductor device that is an electronic component manufactured by the manufacturing method according to claim 1; and the semiconductor device is manufactured by stacking the semiconductor device on another semiconductor device. Production method.

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