JPH08155408A - Method for washing precise part - Google Patents

Method for washing precise part

Info

Publication number
JPH08155408A
JPH08155408A JP6329257A JP32925794A JPH08155408A JP H08155408 A JPH08155408 A JP H08155408A JP 6329257 A JP6329257 A JP 6329257A JP 32925794 A JP32925794 A JP 32925794A JP H08155408 A JPH08155408 A JP H08155408A
Authority
JP
Japan
Prior art keywords
substrate
washing
ozone
water
shower
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6329257A
Other languages
Japanese (ja)
Other versions
JP3190221B2 (en
Inventor
Kiyoshi Shimada
清 嶋田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPC Electronics Corp
Original Assignee
SPC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPC Electronics Corp filed Critical SPC Electronics Corp
Priority to JP32925794A priority Critical patent/JP3190221B2/en
Publication of JPH08155408A publication Critical patent/JPH08155408A/en
Application granted granted Critical
Publication of JP3190221B2 publication Critical patent/JP3190221B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a substrate of high quality free from a contaminant and a washing agent by ejecting water having ozone gas dissolved therein to an article to be washed and subsequently washing the article with an alkalline washing agent. CONSTITUTION: A washing apparatus A is constituted of an ozone-containing water shower part 6, an alkali washing shower part 8 and a brush washing part 11 and a substrate 1 composed of a glass plate is fed from an inlet part B by feed rollers 4. For example, high purity water containing 6ppm of ozone is ejected to the substrate 1 from the ozone-containing water shower 5 of the ozone-containing water shower part 6 to form an oxide film in which a contaminant such as fine particles is taken. Subsequently, for example, washing water containing 14wt.% of NH3 is ejected to the substrate 1 from the alkali washing shower 7 of the alkali washing shower part 8. Thereafter, the surface of the substrate 1 is lightly rubbed with the nuylon brush of the brush washing part 11 and washing water containing 6ppm of ozone is ejected to the substrate 1 from a rinsing water shower 10 and the washed substrate is taken out of an outlet part 11.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、液晶用基板、半導体基
板のような精密部品の洗浄方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning precision parts such as liquid crystal substrates and semiconductor substrates.

【0002】[0002]

【従来の技術】微粒子汚れなどで汚染された液晶用基板
や半導体ウエハーの微粒子汚れなどの除去方法として、
アルカリ性の洗浄液(アンモニア水、アルカリ性界面活
性剤などを含む水性液)を使用し、超音波や、ブラシな
どの物理的な作用を併用して微粒子汚れを除去する洗浄
方法は知られている。
2. Description of the Related Art As a method for removing fine particle stains on liquid crystal substrates and semiconductor wafers that are contaminated with fine particle stains,
A cleaning method is known in which an alkaline cleaning liquid (aqueous solution containing ammonia water, an alkaline surfactant, etc.) is used, and fine particles are removed by using ultrasonic waves and a physical action such as a brush.

【0003】[0003]

【発明が解決しようとする課題】従来技術は微粒子汚れ
などの除去が不充分であったり、被洗浄物の表面にアル
カリ性の洗浄剤が残存したりする難点があった。
However, the prior art has problems that the removal of fine particle dirt and the like is insufficient and that an alkaline cleaning agent remains on the surface of the object to be cleaned.

【0004】本発明は、上述した従来技術の難点を解決
し、汚れの除去が充分であり、且つ洗浄剤の残留のな
い、高品質の基板をうるための洗浄方法を提供すること
を目的とする。
An object of the present invention is to solve the above-mentioned drawbacks of the prior art, and to provide a cleaning method for obtaining a high-quality substrate in which stains are sufficiently removed and a cleaning agent does not remain. To do.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
本発明においては、オゾンガスを溶解させた水を被洗浄
物に噴射し、ついでアルカリ性の洗浄剤で洗浄し、又被
洗浄物をアルカリ性の洗浄剤で洗浄した後、オゾンガス
を溶解させた水で洗浄する。
In order to achieve the above object, in the present invention, water in which ozone gas is dissolved is sprayed onto an object to be cleaned, then washed with an alkaline cleaning agent, and the object to be cleaned is treated with an alkaline agent. After cleaning with a cleaning agent, it is cleaned with water in which ozone gas is dissolved.

【0006】次に、本発明を更に具体的に説明する。オ
ゾンガスを溶解させるべき水としては、可及的不純物の
含有量の少ない高純度の水が適当である。例えばイオン
交換水のような水を好適に使用できるオゾンガスを溶
解、含有する水は常法に従って製造されるが、オゾンの
含有量が1〜5ppm、望ましくは6〜8ppmのもの
が好ましい。
Next, the present invention will be described more specifically. As the water in which the ozone gas is to be dissolved, high-purity water with a minimum content of impurities is suitable. For example, water containing ozone gas in which water such as ion-exchanged water can be suitably used is dissolved and contained according to a conventional method. The ozone content is preferably 1 to 5 ppm, more preferably 6 to 8 ppm.

【0007】オゾンを溶解した水(オゾン含有水と略
称)の噴射量は被洗浄物たる基板1cm2 当り0.5〜
5ml、望ましくは1〜2ml、又噴射速度は0.5〜
5m/sec、望ましくは1〜2m/secとするのが
適当である。
The injection amount of water in which ozone is dissolved (abbreviated as ozone-containing water) is 0.5 to 1 cm 2 of the substrate to be cleaned.
5 ml, preferably 1-2 ml, and the injection speed is 0.5-
5 m / sec, preferably 1 to 2 m / sec is suitable.

【0008】図1、図2、図3はオゾン含有水の作用を
模式的に説明するための断面図である。微粒子2のよう
な汚れが附着している基板1(図1参照)にオゾン含有
量水(図示せず)を噴射すると、オゾン含有水の酸化作
用により、基板表面に微粒子を取込んだ形で、図2に示
すような酸化膜3が形成される。
1, 2, and 3 are cross-sectional views for schematically explaining the action of ozone-containing water. When ozone-containing water (not shown) is jetted onto the substrate 1 (see FIG. 1) on which dirt such as fine particles 2 is attached, the ozone-containing water is oxidized to form fine particles on the substrate surface. , An oxide film 3 as shown in FIG. 2 is formed.

【0009】この酸化膜3は以下述べるアルカリ性の洗
浄剤(図示せず)の作用により図3に示すよう微粒子を
取込んだまま基板1から容易に剥離し、清浄な基板を得
ることができる。アルカリ性の洗浄液のエッチング作用
によるものと思われる。
The oxide film 3 can be easily peeled off from the substrate 1 while the fine particles are still taken in as shown in FIG. 3 by the action of an alkaline cleaning agent (not shown) described below to obtain a clean substrate. This is probably due to the etching action of the alkaline cleaning solution.

【0010】オゾンの酸化作用は数1、数2、数3に示
すように、水中に含まれる水酸基イオン(OH- )とオ
ゾンの作用により酸化力の強いヒドロキシラジカル(H
O・)が生成し、このラジカルによって酸化が行なわれ
るものと思われる。
The oxidizing action of ozone is, as shown in Eqs. 1, 2 and 3, a hydroxyl radical (H-) having a strong oxidizing power due to the action of hydroxyl ions (OH ) contained in water and ozone.
O.) is generated, and it is thought that this radical oxidizes.

【数1】 [Equation 1]

【数2】 [Equation 2]

【数3】 (Equation 3)

【0011】ついで基板をアルカリ性の洗浄剤で洗浄す
る。アルカリ性の洗浄剤としては、アンモニア水、又は
アルカリ性界面活性剤を含む水性液が好適に使用でき
る。
Next, the substrate is washed with an alkaline detergent. As the alkaline cleaning agent, ammonia water or an aqueous liquid containing an alkaline surfactant can be preferably used.

【0012】アルカリ性界面活性剤としては脂肪族アミ
ン塩、アルキルベンゼンフルホン酸塩、ポリオキシエチ
レンアルキルフェニルエーテル硫酸塩等が特に適当であ
る。
Aliphatic amine salts, alkylbenzene fulphonates, polyoxyethylene alkylphenyl ether sulfates and the like are particularly suitable as the alkaline surfactant.

【0013】アンモニア水の場合NH3 含有量が2〜3
0wt%、望ましくは10〜14wt%のものが、又界
面活性剤溶液の場合、濃度が0.5〜5wt%、望まし
くは1〜2wt%のものが好ましい。
In the case of ammonia water, the NH 3 content is 2-3.
0 wt%, preferably 10 to 14 wt%, and in the case of a surfactant solution, the concentration is preferably 0.5 to 5 wt%, preferably 1 to 2 wt%.

【0014】アルカリ性の洗浄剤による洗浄方法として
は、ノズルから洗浄剤を被洗浄物たる基板に向け噴射す
るのが実際的である。噴射量は、基板1cm2 当り0.
5〜5ml、望ましくは1〜2ml、又噴射速度は0.
5〜5m/sec、望ましくは1〜2m/secとする
のが適当である。
As a cleaning method using an alkaline cleaning agent, it is practical to spray the cleaning agent from a nozzle onto a substrate as an object to be cleaned. Injection quantity, the substrate 1 cm 2 per 0.
5 to 5 ml, preferably 1 to 2 ml, and the injection speed is 0.
It is suitable to be 5 to 5 m / sec, preferably 1 to 2 m / sec.

【0015】なお、上記オゾン含有水、洗浄液による洗
浄は、図4に示すように駆動装置(図示せず)により矢
印の方向に回転する搬送ローラー4を用いて基板1を矢
印の方向に移動させつつ連続的に行なうのが実際的であ
る。
For the cleaning with the ozone-containing water and the cleaning liquid, the substrate 1 is moved in the direction of the arrow by using the conveying roller 4 which is rotated in the direction of the arrow by the driving device (not shown) as shown in FIG. However, it is practical to do it continuously.

【0016】洗浄の際回転ブラシ、超音波発生装置(図
示せず)を併用することにより、効果を一層大とするこ
とができる。
The effect can be further enhanced by using a rotating brush and an ultrasonic generator (not shown) together during cleaning.

【0017】洗浄後、高純度水でリンスする。この際リ
ンス水にオゾンガスを溶解させておくことにより、一層
不純物の少ない基板の得られることが判明した。(不純
物の含有量を数分の1以下とすることができる。) オゾンガスの含有量は1〜15ppm、望ましくは6〜
8ppm、噴射量は基板1cm2 当り0.5〜5ml、
望ましくは1〜2ml、又は噴射速度は1〜2m/se
cとするのが適当である。
After washing, rinse with high-purity water. At this time, it was found that by dissolving ozone gas in the rinse water, a substrate with less impurities can be obtained. (The content of impurities can be reduced to a fraction or less.) The content of ozone gas is 1 to 15 ppm, preferably 6 to
8 ppm, injection amount is 0.5-5 ml per 1 cm 2 of substrate,
Desirably 1-2 ml, or jet speed is 1-2 m / se
c is appropriate.

【0018】更に又オゾンガスを含むリンス水を用いる
ことにより、アルカリイオンの残存量を実質的に零とで
きることも判明した。
It has also been found that the residual amount of alkali ions can be made substantially zero by using rinse water containing ozone gas.

【0019】[0019]

【作用】オゾンガスを溶解させた水を被洗浄物に噴射
し、ついでアルカリ性の洗浄剤で洗浄することにより被
洗浄物表面に附着した微粒子等の汚れを取込んだ酸化膜
を形成させ、微粒子等を酸化膜ととも剥離除去する。
又、リンス水にオゾンを含有させることにより微粒子等
の除去効率を大巾に向上させ、更にアルカリイオンの残
存量を零とする。
[Function] By spraying water in which ozone gas is dissolved onto the object to be cleaned and then cleaning with an alkaline cleaning agent, an oxide film containing dirt such as particles adhering to the surface of the object to be cleaned is formed. Is removed together with the oxide film.
Further, by including ozone in the rinse water, the efficiency of removing fine particles and the like is greatly improved, and the residual amount of alkali ions is made zero.

【0020】[0020]

【実施例1】本発明の実施例を図4に基いて説明する。
Aはオゾン含有水シャワー部6、アルカリ洗浄シャワー
部8、ブラシ洗浄部(リンス部)11よりなる洗浄装置
である。ガラス板よりなる基板1を入口部Bから駆動装
置(図示せず)により矢印の方向に回転する搬送ローラ
ー4でオゾン含有水シャワー部6に供給し、オゾン含有
水シャワー5からオゾンを6ppm含む高純度水を基板
1cm2 当り2mlの割合で1m/secのシャワーと
して噴射し、微粒子等の汚れを取込んだ酸化膜(図示せ
ず、図2参照)を形成させる。
[Embodiment 1] An embodiment of the present invention will be described with reference to FIG.
A is a cleaning device including an ozone-containing water shower unit 6, an alkali cleaning shower unit 8, and a brush cleaning unit (rinse unit) 11. A substrate 1 made of a glass plate is supplied from an inlet portion B to a ozone-containing water shower section 6 by a conveying roller 4 which rotates in a direction of an arrow by a driving device (not shown), and the ozone-containing water shower 5 contains 6 ppm of ozone. Purified water is sprayed as a shower of 1 m / sec at a rate of 2 ml per cm 2 of the substrate to form an oxide film (not shown, see FIG. 2) in which dirt such as fine particles is incorporated.

【0021】ついで基板1を搬送ローラー4によりアル
カリ洗浄シャワー部8に供給し、アルカリ洗浄シャワー
7からNH3 を14wt%含む洗浄水を、基板1cm2
当り2mlの割合で1m/secのシャワーとして噴射
した。
Next, the substrate 1 is supplied to the alkali cleaning shower unit 8 by the transport roller 4, and the cleaning water containing 14 wt% of NH 3 is supplied from the alkali cleaning shower 7 to the substrate 1 cm 2.
It was sprayed as a shower of 1 m / sec at a rate of 2 ml per one.

【0022】搬送ローラー4で基板1をブラシ洗浄部
(リンス部)11に送り、矢印の方向に回転せしめられ
ているナイロンブラシ9で表面を軽くこすり、オゾンを
6ppm含む洗浄水を、基板1cm2 当り2mlの割合
で1m/secのシャワーとしてリンス用水シャワー1
0から噴射し、出口部11から取出した。
The substrate 1 is sent to the brush cleaning section (rinsing section) 11 by the transport roller 4, the surface is lightly rubbed by the nylon brush 9 rotated in the direction of the arrow, and cleaning water containing 6 ppm of ozone is added to the substrate 1 cm 2 Rinse water shower 1 as a 1 m / sec shower at a rate of 2 ml per
It was injected from 0 and taken out from the outlet 11.

【0023】[0023]

【実施例2】1μmのポリスチレン粒子を1cm2 当り
10個附着させたガラス基板を用い上記実施例の評価を
行なった。ポリスチレン粒子の除去率は98%であり、
アルカリイオン残存率は零(検出限界以下)であった。
Example 2 The above examples were evaluated using a glass substrate having 10 1 μm polystyrene particles attached per cm 2 . The removal rate of polystyrene particles is 98%,
The residual rate of alkali ions was zero (below the detection limit).

【0024】[0024]

【比較例1】実験例に代え、リンス部でオゾンを含有し
ない純水を使用した場合のポリスチレンの除去率は78
%、アルカリイオンの残存率は零であった。
Comparative Example 1 Instead of the experimental example, the removal rate of polystyrene was 78 when pure water containing no ozone was used in the rinse section.
%, The residual rate of alkali ions was zero.

【0025】[0025]

【比較例2】上記実施例のアルカリ洗浄シャワー部に直
接基板を供給し、オゾンを含有しないリンス水を使用し
た場合の除去率は88%、アルカリイオンの残存率は2
%であった。
[Comparative Example 2] When the substrate was directly supplied to the alkali cleaning shower unit of the above-mentioned Example and the rinse water containing no ozone was used, the removal rate was 88% and the residual rate of alkali ions was 2.
%Met.

【0026】[0026]

【発明の効果】汚れの除去が充分であり、洗浄剤の残留
もない高品質の基板を得る。
EFFECTS OF THE INVENTION It is possible to obtain a high-quality substrate in which stains are sufficiently removed and no cleaning agent remains.

【0027】[0027]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の作用を模式的に説明するための断面図
である。
FIG. 1 is a cross-sectional view for schematically explaining the operation of the present invention.

【図2】本発明の作用を模式的に説明するための断面図
である。
FIG. 2 is a cross-sectional view for schematically explaining the operation of the present invention.

【図3】本発明の作用を模式的に説明するための断面図
である。
FIG. 3 is a cross-sectional view for schematically explaining the operation of the present invention.

【図4】本発明の方法を説明するための断面図である。FIG. 4 is a cross-sectional view for explaining the method of the present invention.

【符号の説明】[Explanation of symbols]

1 基板 2 微粒子(汚れ) 3 酸化膜 4 搬送ローラー 5 オゾン含有水シャワー 6 オゾン含有水シャワー部 7 アルカリ洗浄シャワー 8 アルカリ洗浄シャワー部 9 ナイロンブラシ 10 リンス用水シャワー 11 ブラシ洗浄部 A 洗浄装置 B 入口部 C 出口部 1 Substrate 2 Fine Particles (Dirt) 3 Oxide Film 4 Transport Roller 5 Ozone-Containing Water Shower 6 Ozone-Containing Water Shower Part 7 Alkaline Cleaning Shower 8 Alkali Cleaning Shower Part 9 Nylon Brush 10 Rinse Water Shower 11 Brush Cleaning Part A Cleaning Device B Inlet Part C exit

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成7年1月18日[Submission date] January 18, 1995

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0006[Correction target item name] 0006

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0006】次に、本発明を具体的に説明する。オゾン
ガスを溶解させるべき水としては、可及的不純物の含有
量の少ない高純度の水が適当である。例えばイオン交換
水のような水を好適に使用できるオゾンガスを溶解、含
有する水は常法に従って製造されるが、オゾンの含有量
が1〜15ppm、望ましくは6〜8ppmのものが好
ましい。
Next, the present invention will be specifically described. As the water in which the ozone gas is to be dissolved, high-purity water with a minimum content of impurities is suitable. For example, water containing ion gas such as ion-exchanged water, in which ozone gas is dissolved and contained, is produced according to a conventional method. The ozone content is preferably 1 to 15 ppm, more preferably 6 to 8 ppm.

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0010[Correction target item name] 0010

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0010】オゾンの酸化作用は数1、数2、数3に示
すように、水中に含まれる水酸基イオン(OH)とオ
ゾンの作用により酸化力の強いヒドロキシラジカル(H
O・)が生成し、このラジカルによって酸化が行なわれ
るものと思われる。
The oxidizing action of ozone is, as shown in Eqs. 1, 2 and 3, a hydroxyl radical (H-) having a strong oxidizing power due to the action of hydroxyl ion (OH ) contained in water and ozone.
O.) is generated, and it is thought that this radical oxidizes.

【数1】 [Equation 1]

【数2】 [Equation 2]

【数3】 (Equation 3)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 オゾンガスを溶解させた水を被洗浄物に
噴射し、ついでアルカリ性の洗浄剤で洗浄することを特
徴とする精密部品の洗浄方法。
1. A method for cleaning precision parts, characterized in that water in which ozone gas is dissolved is sprayed onto an object to be cleaned and then cleaned with an alkaline cleaning agent.
【請求項2】 被洗浄物をアルカリ性の洗浄剤で洗浄し
た後、オゾンガスを溶解させた水で洗浄することを特徴
とする請求項1記載の洗浄方法。
2. The cleaning method according to claim 1, wherein the object to be cleaned is cleaned with an alkaline cleaning agent and then cleaned with water in which ozone gas is dissolved.
JP32925794A 1994-12-05 1994-12-05 Cleaning method for fine particles on the surface of precision parts Expired - Fee Related JP3190221B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32925794A JP3190221B2 (en) 1994-12-05 1994-12-05 Cleaning method for fine particles on the surface of precision parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32925794A JP3190221B2 (en) 1994-12-05 1994-12-05 Cleaning method for fine particles on the surface of precision parts

Publications (2)

Publication Number Publication Date
JPH08155408A true JPH08155408A (en) 1996-06-18
JP3190221B2 JP3190221B2 (en) 2001-07-23

Family

ID=18219427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32925794A Expired - Fee Related JP3190221B2 (en) 1994-12-05 1994-12-05 Cleaning method for fine particles on the surface of precision parts

Country Status (1)

Country Link
JP (1) JP3190221B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1122767A1 (en) * 1999-04-30 2001-08-08 Shin-Etsu Handotai Co., Ltd Wafer polishing method and cleaning method, and protection film
US7494549B2 (en) 2002-08-16 2009-02-24 Dainippon Screen Mfg. Co., Ltd. Substrate treatment apparatus and substrate treatment method
JP2014083489A (en) * 2012-10-23 2014-05-12 Nippon Aqua Kk Water holding tank

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1122767A1 (en) * 1999-04-30 2001-08-08 Shin-Etsu Handotai Co., Ltd Wafer polishing method and cleaning method, and protection film
EP1122767A4 (en) * 1999-04-30 2006-05-17 Shinetsu Handotai Kk Wafer polishing method and cleaning method, and protection film
US7494549B2 (en) 2002-08-16 2009-02-24 Dainippon Screen Mfg. Co., Ltd. Substrate treatment apparatus and substrate treatment method
JP2014083489A (en) * 2012-10-23 2014-05-12 Nippon Aqua Kk Water holding tank

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