JP3190221B2 - Cleaning method for fine particles on the surface of precision parts - Google Patents

Cleaning method for fine particles on the surface of precision parts

Info

Publication number
JP3190221B2
JP3190221B2 JP32925794A JP32925794A JP3190221B2 JP 3190221 B2 JP3190221 B2 JP 3190221B2 JP 32925794 A JP32925794 A JP 32925794A JP 32925794 A JP32925794 A JP 32925794A JP 3190221 B2 JP3190221 B2 JP 3190221B2
Authority
JP
Japan
Prior art keywords
water
cleaning
substrate
ozone
fine particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP32925794A
Other languages
Japanese (ja)
Other versions
JPH08155408A (en
Inventor
清 嶋田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPC Electronics Corp
Original Assignee
SPC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPC Electronics Corp filed Critical SPC Electronics Corp
Priority to JP32925794A priority Critical patent/JP3190221B2/en
Publication of JPH08155408A publication Critical patent/JPH08155408A/en
Application granted granted Critical
Publication of JP3190221B2 publication Critical patent/JP3190221B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、液晶用基板、半導体基
板のような精密部品の表面に付着している微粒子(パー
ティクル)汚れを洗浄する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to fine particles (particles) adhering to the surface of precision parts such as liquid crystal substrates and semiconductor substrates.
Tickle) relates to a method for cleaning dirt .

【0002】[0002]

【従来の技術】液晶用基板や半導体ウエハーなどに付着
した微粒子の除去方法として、アルカリ性の洗浄液
(アンモニア水、アルカリ性界面活性剤などを含む水性
液)を使用し、超音波やブラシなどの物理的な作用を併
用し洗浄方法知られている。
BACKGROUND OF THE INVENTION attached, such as a liquid crystal substrate and semiconductor wafer
The As a method for removing the fine particles, alkaline washing solution using (ammonia water, an aqueous solution containing an alkali soluble surfactant), a cleaning method is known in which a combination of physical action such as an ultrasonic or a brush .

【0003】[0003]

【発明が解決しようとする課題】しかし、従来技術に
いて微粒子の除去が充分に行えず、しかも、被洗浄
物の表面にアルカリ性の洗浄剤に由来するアルカリイオ
が残存したりする難点があった。
The object of the invention is to be Solved However, your in the prior art
Alkali In its removal of particulates can not sufficiently be performed, moreover, from the alkaline cleaning agent to the surface of the object to be cleaned Io
There has been a drawback that down to or to remain.

【0004】本発明は、上述した従来技術の難点を解決
し、微粒子の除去充分に行え、且つアルカリイオン
残留のない、高品質の基板をうるための微粒子汚れの
浄方法を提供することを目的とする。
[0004] The present invention is to solve the drawbacks of the prior art described above, the removal of fine particles sufficiently performed, and no residual alkali ions, particulate contamination to sell high quality substrate for washing <br/> Kiyoshi The aim is to provide a method.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
本発明においては、オゾンガスを溶解させた水を被洗浄
物に噴射し、ついでアルカリ性の洗浄剤で洗浄し、又被
洗浄物をアルカリ性の洗浄剤で洗浄した後、オゾンガス
を溶解させた水で洗浄する。
In order to achieve the above object, in the present invention, water in which ozone gas is dissolved is sprayed on the object to be cleaned, and then washed with an alkaline cleaning agent. After washing with a detergent, washing is performed with water in which ozone gas is dissolved.

【0006】次に、本発明を更に具体的に説明する。オ
ゾンガスを溶解させるべき水としては、可及的不純物
の含有量の少ない高純度の水が適当である。例えばイオ
ン交換水のような水を好適に使用できるオゾンガスを
溶解、含有する水は常法に従って製造されるが、オゾン
の含有量が1〜15ppm、望ましくは6〜8ppmの
ものが好ましい。
Next, the present invention will be described more specifically. The water should dissolve the ozone gas, high purity water low content of impurity is appropriate as possible. For example, water such as ion exchange water can be suitably used . The water containing and dissolving the ozone gas is produced according to a conventional method, but the ozone content is preferably 1 to 15 ppm, more preferably 6 to 8 ppm.

【0007】オゾンを溶解した水(オゾン含有水と略
称)の噴射量は被洗浄物たる基板1cm2 当り0.5〜
5ml、望ましくは1〜2ml、又噴射速度は0.5〜
5m/sec、望ましくは1〜2m/secとするのが
適当である。
The injection amount of water containing ozone (abbreviated as ozone-containing water) is 0.5 to 0.5 cm 2 per 1 cm 2 of a substrate to be cleaned.
5 ml, desirably 1-2 ml, and injection speed 0.5-
5 m / sec, preferably 1-2 m / sec.

【0008】図1、図2、図3はオゾン含有水の作用を
模式的に説明するための断面図である。微粒子2が附着
している基板1(図1参照)にオゾン含有水(図示せ
ず)を噴射するとオゾン含有水の酸化作用により、基板
表面には微粒子を取込んだ形で、図2に示すような酸化
膜3が形成される。
FIGS. 1, 2 and 3 are cross-sectional views for schematically explaining the action of the ozone-containing water. When the ozone-containing water (not shown) is sprayed onto the substrate 1 (see FIG. 1) to which the fine particles 2 are attached , the fine particles are taken into the substrate surface by the oxidizing action of the ozone-containing water, as shown in FIG. Such an oxide film 3 is formed.

【0009】この酸化膜3は以下述べるアルカリ性の洗
浄剤(図示せず)のエッチング作用により図3に示す
よう微粒子を取込んだまま基板1から容易に剥離し、
清浄な基板を得ることができる。
The oxide film 3 is easily peeled off from the substrate 1 while taking in fine particles as shown in FIG. 3 by an etching action of an alkaline cleaning agent (not shown) described below.
A clean substrate can be obtained.

【0010】これは下記反応式に示すように、水中に含
まれる水酸基イオン(OH)と水中に溶解したオゾン
との塩基触媒反応によって酸化が行われるからである。 O+HO→HO +OH (Oはオゾンガス、HO は過酸化水酸基イオン、
OHは水酸基イオン) HO +OH→2HO・ O+HO→HO・2O (HO・はヒドロキシルラジカル)
As shown in the following reaction formula , the hydroxyl ion (OH ) contained in the water and the ozone dissolved in the water are
This is because the oxidation is carried out by a base catalyzed reaction with . O 3 + H 2 O → HO 3 + + OH (O 3 is an ozone gas, HO 3 + is a peroxide ion,
OH is a hydroxyl ion) HO 3 + + OH → 2HO 2 .O 3 + HO 2 → HO.2O 2 (HO. Is a hydroxyl radical)

【0011】ついで基板をアルカリ性の洗浄剤で洗浄す
る。アルカリ性の洗浄剤としては、アンモニア水、又は
アルカリ性界面活性剤を含む水性液が好適に使用でき
る。
Next, the substrate is cleaned with an alkaline cleaning agent. As the alkaline detergent, aqueous ammonia or an aqueous liquid containing an alkaline surfactant can be suitably used.

【0012】アルカリ性界面活性剤としては脂肪族アミ
ン塩、アルキルベンゼンフルホン酸塩、ポリオキシエチ
レンアルキルフェニルエーテル硫酸塩等が特に適当であ
る。
As the alkaline surfactant, aliphatic amine salts, alkyl benzene sulfonates, polyoxyethylene alkyl phenyl ether sulfates and the like are particularly suitable.

【0013】アンモニア水の場合NH3 含有量が2〜3
0wt%、望ましくは10〜14wt%のものが、又界
面活性剤溶液の場合、濃度が0.5〜5wt%、望まし
くは1〜2wt%のものが好ましい。
In the case of ammonia water, the NH 3 content is 2-3.
0 wt%, preferably 10 to 14 wt%, and in the case of a surfactant solution, the concentration is preferably 0.5 to 5 wt%, more preferably 1 to 2 wt%.

【0014】アルカリ性の洗浄剤による洗浄方法として
は、ノズルから洗浄剤を被洗浄物たる基板に向け噴射す
るのが実際的である。噴射量は、基板1cm2 当り0.
5〜5ml、望ましくは1〜2ml、又噴射速度は0.
5〜5m/sec、望ましくは1〜2m/secとする
のが適当である。
As a cleaning method using an alkaline cleaning agent, it is practical to spray a cleaning agent from a nozzle toward a substrate to be cleaned. The amount of injection was 0.1 mm / cm 2 of substrate.
5 to 5 ml, desirably 1 to 2 ml, and the injection speed is 0.1 ml.
It is suitably 5 to 5 m / sec, preferably 1 to 2 m / sec.

【0015】なお、上記オゾン含有水、洗浄液による洗
浄は、図4に示すように駆動装置(図示せず)により矢
印の方向に回転する搬送ローラー4を用いて基板1を矢
印の方向に移動させつつ連続的に行なうのが実際的であ
る。
The cleaning with the ozone-containing water and the cleaning liquid is performed by moving the substrate 1 in the direction of the arrow using a transport roller 4 rotating in the direction of the arrow by a driving device (not shown) as shown in FIG. It is practical to carry out continuously.

【0016】洗浄の際回転ブラシ、超音波発生装置(図
示せず)を併用することにより、効果を一層大とするこ
とができる。
The effect can be further enhanced by using a rotating brush and an ultrasonic generator (not shown) at the time of cleaning.

【0017】洗浄後、高純度水でリンスする。この際リ
ンス水にオゾンガスを溶解させておくことにより、一層
不純物の少ない基板の得られることが判明した。(不純
物の含有量を数分の1以下とすることができる。) オゾンガスの含有量は1〜15ppm、望ましくは6〜
8ppm、噴射量は基板1cm2 当り0.5〜5ml、
望ましくは1〜2ml、又は噴射速度は1〜2m/se
cとするのが適当である。
After washing, it is rinsed with high-purity water. At this time, it was found that by dissolving the ozone gas in the rinsing water, a substrate with less impurities could be obtained. (The content of impurities can be reduced to a fraction or less.) The content of ozone gas is 1 to 15 ppm, preferably 6 to 15 ppm.
8 ppm, injection amount is 0.5 to 5 ml per 1 cm 2 of substrate,
Desirably 1-2 ml, or injection speed is 1-2 m / sec
It is appropriate to use c.

【0018】更に又オゾンガスを含むリンス水を用いる
ことにより、アルカリイオンの残存量を実質的に零にで
きることも判明した。
It has also been found that the use of rinsing water containing ozone gas makes it possible to reduce the residual amount of alkali ions to substantially zero.

【0019】[0019]

【作用】オゾンガスを溶解させた水を被洗浄物に噴射
し、ついでアルカリ性の洗浄剤で洗浄することにより被
洗浄物表面に附着した微粒子汚れを取込んだ酸化膜を形
成させ、微粒子を酸化膜とともに剥離除去する。叉、リ
ンス水にオゾンを含有させることにより微粒子の除去効
率を大巾に向上させ、更にアルカリイオンの残存量を零
とする。
[Action] Water in which ozone gas is dissolved is sprayed onto the object to be cleaned, and then the substrate is washed with an alkaline cleaning agent to form an oxide film in which fine particles adhered to the surface of the object to be cleaned are captured. At the same time, it is peeled off. In addition, by adding ozone to the rinsing water, the efficiency of removing fine particles is greatly improved, and the remaining amount of alkali ions is reduced to zero.

【0020】[0020]

【実施例1】本発明の実施例を図4に基いて説明する。
Aはオゾン含有水シャワー部6、アルカリ洗浄シャワー
部8、ブラシ洗浄部(リンス部)11よりなる洗浄装置
である。ガラス板よりなる基板1を入口部Bから駆動装
置(図示せず)により矢印の方向に回転する搬送ローラ
ー4でオゾン含有水シャワー部6に供給し、オゾン含有
水シャワー5からオゾンを6ppm含む高純度水を基板
1cm2 当り2mlの割合で1m/secのシャワーと
して噴射し、微粒子等の汚れを取込んだ酸化膜(図示せ
ず、図2参照)を形成させる。
Embodiment 1 An embodiment of the present invention will be described with reference to FIG.
A is a cleaning device including an ozone-containing water shower section 6, an alkali cleaning shower section 8, and a brush cleaning section (rinse section) 11. A substrate 1 made of a glass plate is supplied from an inlet B to an ozone-containing water shower unit 6 by a transport roller 4 rotating in the direction of an arrow by a driving device (not shown). Purified water is sprayed at a rate of 2 ml per 1 cm 2 of the substrate as a shower at 1 m / sec to form an oxide film (not shown, see FIG. 2) incorporating dirt such as fine particles.

【0021】ついで基板1を搬送ローラー4によりアル
カリ洗浄シャワー部8に供給し、アルカリ洗浄シャワー
7からNH3 を14wt%含む洗浄水を、基板1cm2
当り2mlの割合で1m/secのシャワーとして噴射
した。
Next, the substrate 1 is supplied to the alkali cleaning shower unit 8 by the transport roller 4, and cleaning water containing 14 wt% of NH 3 is supplied from the alkali cleaning shower 7 to the substrate 1 cm 2.
The spray was performed at a rate of 2 ml per 1 m / sec as a shower.

【0022】搬送ローラー4で基板1をブラシ洗浄部
(リンス部)11に送り、矢印の方向に回転せしめられ
ているナイロンブラシ9で表面を軽くこすり、オゾンを
6ppm含む洗浄水を、基板1cm2 当り2mlの割合
で1m/secのシャワーとしてリンス用水シャワー1
0から噴射し、出口部11から取出した。
[0022] sends the substrate 1 by the transfer roller 4 brush cleaning portion (rinse section) 11, rub the surface lightly with a nylon brush 9 that is rotated in the direction of the arrow, the wash water containing 6ppm ozone, the substrate 1 cm 2 Rinse water shower 1 at a rate of 2 ml per 1 m / sec shower
It was injected from 0 and taken out from the outlet 11.

【0023】[0023]

【実施例2】1μmのポリスチレン粒子を1cm2 当り
10個附着させたガラス基板を用い上記実施例の評価を
行なった。ポリスチレン粒子の除去率は98%であり、
アルカリイオン残存率は零(検出限界以下)であった。
Example 2 The above example was evaluated using a glass substrate on which 10 polystyrene particles of 1 μm were attached per 1 cm 2 . The removal rate of polystyrene particles is 98%,
The residual alkali ion ratio was zero (below the detection limit).

【0024】[0024]

【比較例1】実験例に代え、リンス部でオゾンを含有し
ない純水を使用した場合のポリスチレンの除去率は78
%、アルカリイオンの残存率は零であった。
Comparative Example 1 In place of the experimental example, the polystyrene removal rate was 78 when pure water not containing ozone was used in the rinsing section.
% And the residual ratio of alkali ions was zero.

【0025】[0025]

【比較例2】上記実施例のアルカリ洗浄シャワー部に直
接基板を供給し、オゾンを含有しないリンス水を使用し
た場合の除去率は88%、アルカリイオンの残存率は2
%であった。
COMPARATIVE EXAMPLE 2 The substrate was directly supplied to the alkali washing shower section of the above embodiment, and the removal rate when using ozone-free rinsing water was 88%, and the residual rate of alkali ions was 2%.
%Met.

【0026】[0026]

【発明の効果】汚れの除去が充分であり、洗浄剤の残留
もない高品質の基板を得る。
According to the present invention, a high-quality substrate with sufficient removal of dirt and no residual cleaning agent can be obtained.

【0027】[0027]

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の作用を模式的に説明するための断面図
である。
FIG. 1 is a cross-sectional view for schematically explaining the operation of the present invention.

【図2】本発明の作用を模式的に説明するための断面図
である。
FIG. 2 is a cross-sectional view for schematically explaining the operation of the present invention.

【図3】本発明の作用を模式的に説明するための断面図
である。
FIG. 3 is a cross-sectional view for schematically explaining the operation of the present invention.

【図4】本発明の方法を説明するための断面図である。FIG. 4 is a cross-sectional view for explaining the method of the present invention.

【符号の説明】[Explanation of symbols]

1 基板 2 微粒子(汚れ) 3 酸化膜 4 搬送ローラー 5 オゾン含有水シャワー 6 オゾン含有水シャワー部 7 アルカリ洗浄シャワー 8 アルカリ洗浄シャワー部 9 ナイロンブラシ 10 リンス用水シャワー 11 ブラシ洗浄部 A 洗浄装置 B 入口部 C 出口部 DESCRIPTION OF SYMBOLS 1 Substrate 2 Fine particles (dirt) 3 Oxide film 4 Conveyance roller 5 Ozone-containing water shower 6 Ozone-containing water shower part 7 Alkaline cleaning shower 8 Alkaline cleaning shower part 9 Nylon brush 10 Rinse water shower 11 Brush cleaning part A Cleaning device B Inlet part C exit

フロントページの続き (56)参考文献 特開 昭63−310604(JP,A) 特開 昭53−106387(JP,A) 特開 平5−104071(JP,A) 特開 昭59−104132(JP,A) 特開 平2−97022(JP,A) 特開 平4−79221(JP,A) 特開 平1−305956(JP,A) 特開 平1−140727(JP,A) (58)調査した分野(Int.Cl.7,DB名) B08B 3/02 - 3/12 C11D 7/02 - 7/04 H01L 21/304 643 Continuation of the front page (56) References JP-A-63-310604 (JP, A) JP-A-53-106387 (JP, A) JP-A-5-104071 (JP, A) JP-A-59-104132 (JP) JP-A-2-97022 (JP, A) JP-A-4-79221 (JP, A) JP-A-1-305595 (JP, A) JP-A-1-140727 (JP, A) (58) Field surveyed (Int.Cl. 7 , DB name) B08B 3/02-3/12 C11D 7 /02-7/04 H01L 21/304 643

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 オゾンガスを溶解させた水を被洗浄物に
噴射し、ついでアルカリ性の洗浄剤で洗浄することを特
徴とする精密部品表面微粒子汚れの洗浄方法。
1. A method for cleaning particulates on the surface of precision parts, which comprises spraying water in which ozone gas is dissolved onto an object to be cleaned, followed by cleaning with an alkaline cleaning agent.
【請求項2】 被洗浄物をアルカリ性の洗浄剤で洗浄し
た後、オゾンガスを溶解させた水で洗浄することを特徴
とする請求項1記載の精密部品表面の微粒子汚れの洗浄
方法。
2. After the object to be cleaned and washed with an alkaline detergent, method of cleaning particulate contamination of a precision part surfaces according to claim 1, wherein the washing with water containing dissolved ozone.
JP32925794A 1994-12-05 1994-12-05 Cleaning method for fine particles on the surface of precision parts Expired - Fee Related JP3190221B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32925794A JP3190221B2 (en) 1994-12-05 1994-12-05 Cleaning method for fine particles on the surface of precision parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32925794A JP3190221B2 (en) 1994-12-05 1994-12-05 Cleaning method for fine particles on the surface of precision parts

Publications (2)

Publication Number Publication Date
JPH08155408A JPH08155408A (en) 1996-06-18
JP3190221B2 true JP3190221B2 (en) 2001-07-23

Family

ID=18219427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32925794A Expired - Fee Related JP3190221B2 (en) 1994-12-05 1994-12-05 Cleaning method for fine particles on the surface of precision parts

Country Status (1)

Country Link
JP (1) JP3190221B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3664605B2 (en) * 1999-04-30 2005-06-29 信越半導体株式会社 Wafer polishing method, cleaning method and processing method
JP4339561B2 (en) 2002-08-16 2009-10-07 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP5984622B2 (en) * 2012-10-23 2016-09-06 日本アクア株式会社 Flushing device

Also Published As

Publication number Publication date
JPH08155408A (en) 1996-06-18

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