JPH08153602A - Resistance paste internally used in low temperature fired substrate - Google Patents
Resistance paste internally used in low temperature fired substrateInfo
- Publication number
- JPH08153602A JPH08153602A JP6317585A JP31758594A JPH08153602A JP H08153602 A JPH08153602 A JP H08153602A JP 6317585 A JP6317585 A JP 6317585A JP 31758594 A JP31758594 A JP 31758594A JP H08153602 A JPH08153602 A JP H08153602A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- low temperature
- weight
- resistance
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Non-Adjustable Resistors (AREA)
- Conductive Materials (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、電子回路部品に用いら
れる抵抗ペーストであって、特に低温焼成基板の内部ま
たは/および外部に抵抗回路を形成するための抵抗ペー
ストに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistance paste used for electronic circuit parts, and more particularly to a resistance paste for forming a resistance circuit inside or / and outside a low temperature fired substrate.
【0002】[0002]
【従来の技術】最近の電子機器の小型化に伴い、電子回
路を高密度に集積化する要求が高まってきており、電子
機器用のセラミックス基板に対しても、多層化、回路の
ファインピッチ化、チップのベア実装等の要求が強くな
ってきている。これらの要求を満たすためには、導体抵
抗が低く、ファインパターン化の可能なAu、Ag、C
u等の導体と同時焼成のできる温度、すなわち1000
℃以下で焼成が可能なセラミックス材料が必要となる。2. Description of the Related Art With the recent miniaturization of electronic devices, the demand for high-density integration of electronic circuits has increased, and ceramic substrates for electronic devices have multiple layers and fine pitch circuits. The demand for bare chip mounting is increasing. In order to meet these requirements, conductor resistance is low, and Au, Ag, and C capable of fine patterning are available.
A temperature at which a conductor such as u can be simultaneously fired, that is, 1000
A ceramic material that can be fired at a temperature below ℃ is required.
【0003】従来、電子機器用の基板としては、アルミ
ナや有機基板が用いられている。しかし、有機基板では
熱膨張率が50×10−6/℃程度と大きい、熱伝導率
がアルミナと比較すると劣る等、前記要求を満たすため
には不向きである。また、アルミナにおいても、焼成に
1600℃の高温が必要であるため、多層化する場合の
内部導体として導体抵抗の比較的高いWやMo等しか用
いることができず、回路のファインパターン化に限界が
あった。Conventionally, alumina and organic substrates have been used as substrates for electronic devices. However, the organic substrate has a large coefficient of thermal expansion of about 50 × 10 −6 / ° C., is inferior in thermal conductivity to alumina, and is not suitable for satisfying the above requirements. Also, in alumina, since a high temperature of 1600 ° C. is required for firing, only W or Mo having a relatively high conductor resistance can be used as an internal conductor in the case of multilayering, which limits the circuit fine patterning. was there.
【0004】このような問題に対応すため、導体抵抗の
低いAu、Ag、Cu等、特にコスト的に有利なAgお
よびAg系の金属を内部導体として使用でき、熱伝導率
も有機基板より優れた低温焼成基板組成の開発が進めら
れている。In order to deal with such a problem, Au, Ag, Cu or the like having a low conductor resistance, such as Ag and Ag-based metals, which are particularly advantageous in terms of cost, can be used as the inner conductor, and the thermal conductivity is superior to that of the organic substrate. Development of low-temperature firing substrate composition is underway.
【0005】また、低温焼成基板は、ガラスとアルミ
ナ、ムライト、ジルコニア等のセラミックス粉末からな
るもので、1000℃以下で焼成が可能なことから、内
部に抵抗等の機能部品を同時焼成によって内蔵できると
いう特徴を有する。しかし、抵抗の場合、現状では同時
焼成中に起こる基板材料中のガラスと抵抗材料中のガラ
スまたは導電成分との間の反応等により、抵抗値のばら
つきが大きいといった問題があった。The low-temperature fired substrate is made of glass and ceramic powder such as alumina, mullite, zirconia, etc. Since it can be fired at 1000 ° C. or lower, functional parts such as resistors can be built in by simultaneous firing. It has the feature. However, in the case of resistance, there is a problem that the resistance value is greatly varied due to the reaction between the glass in the substrate material and the glass in the resistance material or the conductive component at the present time.
【0006】[0006]
【発明が解決しようとする課題】本発明は、このような
従来の問題点に鑑み、導電成分と基板材料との間の反応
を抑制することにより、抵抗値ばらつきが小さく、低温
焼成基板に内蔵可能な抵抗ペーストを提案しようとする
ものである。In view of such conventional problems, the present invention suppresses a reaction between a conductive component and a substrate material, and thus has a small variation in resistance value and is incorporated in a low temperature baking substrate. It is intended to propose a possible resistance paste.
【0007】[0007]
【課題を解決するための手段】本発明は、低温焼成基板
に内蔵または同時焼成可能であり、導電成分としてルテ
ニウム酸鉛を用いる抵抗ペーストにおいて、ルテニウム
酸鉛1重量部に対して、酸化ビスマスを1重量部以上含
有するか、または、ルテニウム酸鉛1重量部に対して、
ガラス組成の酸化ビスマスを1重量部以上含有するガラ
スを用いることを特徴とする低温焼成基板内蔵用抵抗ペ
ーストを要旨とするものである。According to the present invention, in a resistance paste using lead ruthenate as a conductive component, which can be built in or co-fired in a low temperature firing substrate, bismuth oxide is added to 1 part by weight of lead ruthenate. 1 parts by weight or more, or 1 part by weight of lead ruthenate,
It is a gist of a resistance paste for embedding in a low temperature firing substrate, which is characterized in that glass containing 1 part by weight or more of bismuth oxide having a glass composition is used.
【0008】[0008]
【作用】抵抗を低温焼成基板に内蔵した場合のばらつき
の原因の一つとして、主に高抵抗域で導電成分として用
いられるルテニウム酸鉛の分解を挙げることができる。
低温焼成基板内に抵抗体を内蔵するためには、低温焼成
基板材料と内蔵抵抗ペーストの同時焼成(コファイヤ)
が必要となる。一般に、低温焼成基板材料は、ガラスと
セラミックス粉末からなり、また、抵抗ペースト材料も
基本的にガラスと無機導電物質の混合物であることか
ら、低温焼成基板と抵抗ペーストの同時焼成中のガラス
の液ー液による相互の拡散は避けられない。[Function] One of the causes of variations when resistors are built in a low temperature fired substrate is decomposition of lead ruthenate, which is mainly used as a conductive component in a high resistance region.
Simultaneous firing of low-temperature firing substrate material and built-in resistor paste (co-fire) in order to embed a resistor in the low-temperature firing substrate.
Is required. Generally, the low-temperature firing substrate material is composed of glass and ceramic powder, and the resistance paste material is basically a mixture of glass and an inorganic conductive material. -Mutual diffusion by liquid is unavoidable.
【0009】ルテニウム酸鉛の分解は、低温焼成基板と
抵抗ペーストの同時焼成中に抵抗体中へ浸入した基板材
料中のガラスにより引起こされると考えられる。すなわ
ち、抵抗体中に含まれていたルテニウム酸鉛が浸入した
ガラスの作用により、酸化ルテニウムへと分解され、抵
抗値のばらつきの原因となり、さらに分解反応時に発泡
を伴うため、ブリスター等の欠陥の原因となる。It is believed that the decomposition of lead ruthenate is caused by the glass in the substrate material that has penetrated into the resistor during simultaneous firing of the low temperature fired substrate and the resistor paste. That is, due to the action of the glass in which the lead ruthenate contained in the resistor is infiltrated, it is decomposed into ruthenium oxide, which causes a variation in the resistance value and further causes foaming during the decomposition reaction, which causes defects such as blisters. Cause.
【0010】このようなルテニウム酸鉛の分解を抑制す
るためには、酸化ビスマスを抵抗に用いるガラス中へ導
入することが必要である。In order to suppress such decomposition of lead ruthenate, it is necessary to introduce bismuth oxide into the glass used for resistance.
【0011】この酸化ビスマスのガラス中への導入方法
として、本発明は酸化ビスマス単独で抵抗ペースト中へ
添加する方法または/および抵抗体中のガラス中にガラ
ス組成として含有させる方法をとったのである。また、
その含有量としては、抵抗ペースト中に含まれるルテニ
ウム酸鉛1重量部に対して酸化ビスマスを1重量部以上
必要であり、望ましくは1.5重量部以上必要である。
その理由は、抵抗体中に含まれる酸化ビスマスが1重量
部より少ない場合、低温焼成基板から抵抗中に浸入した
ガラス分によるルテニウム酸鉛の分解反応を抑制するの
に十分でないからである。As a method of introducing this bismuth oxide into the glass, the present invention takes a method of adding bismuth oxide alone to the resistance paste and / or a method of incorporating it into the glass in the resistor as a glass composition. . Also,
As the content, 1 part by weight or more of bismuth oxide is necessary with respect to 1 part by weight of lead ruthenate contained in the resistance paste, and preferably 1.5 parts by weight or more.
The reason is that when the amount of bismuth oxide contained in the resistor is less than 1 part by weight, it is not sufficient to suppress the decomposition reaction of lead ruthenate by the glass component that has penetrated into the resistor from the low temperature firing substrate.
【0012】[0012]
【実施例】SiO2ーAl2O3ーB2O3ーZnOー
CaO系結晶化ガラス粉末(SiO2:29wt%、A
l2O3:18wt%、B2O3:13wt%、Zn
O:27wt%、CaO:13wt%)と、Al2O3
粉末を重量比で59:41となるようにボールミルを用
いて混合し、低温焼成基板用組成物を得た。なお、Al
2O3粉末は平均粒径0.5〜1μmのものを用いた。EXAMPLES SiO 2 —Al 2 O 3 —B 2 O 3 —ZnO—CaO system crystallized glass powder (SiO 2 : 29 wt%, A
l 2 O 3 : 18 wt%, B 2 O 3 : 13 wt%, Zn
O: 27 wt%, CaO: 13 wt%) and Al 2 O 3
The powders were mixed using a ball mill in a weight ratio of 59:41 to obtain a composition for low temperature firing substrate. In addition, Al
The 2 O 3 powder used had an average particle size of 0.5 to 1 μm.
【0013】得られた低温焼成基板用組成物100重量
部に対してブチラール樹脂10重量部、可塑材としてフ
タル酸ジブチル70重量部、溶剤としてイソプロピルア
ルコール50重量部およびメチルエチルケトン50重量
部を加え、48時間ボールミル混合してスラリーを作製
し、PETフィルム上にドクターブレード法によりグリ
ーンシートを作製した。48 parts by weight of butyral resin, 70 parts by weight of dibutyl phthalate as a plasticizer, 50 parts by weight of isopropyl alcohol and 50 parts by weight of methyl ethyl ketone as a solvent were added to 100 parts by weight of the composition for a low temperature fired substrate thus obtained. The slurry was prepared by mixing with a ball mill for an hour, and a green sheet was prepared on a PET film by a doctor blade method.
【0014】次に、ルテニウム酸鉛と表1に示す組成の
ガラス粉末と酸化ビスマス粉末を表2に示した割合で混
合し、これら混合物100重量部に対し、エチルセルロ
ースのターピネオール溶液をビヒクルとして35重量部
加え、3ロールミルで混練して各々均一なペーストを作
製した。Next, lead ruthenate, glass powder having the composition shown in Table 1 and bismuth oxide powder were mixed in the proportions shown in Table 2, and 100 parts by weight of these mixtures were mixed with 35 parts by weight of a terpineol solution of ethyl cellulose as a vehicle. Parts were added and kneaded with a 3-roll mill to prepare a uniform paste.
【0015】上記方法で得られた抵抗ペーストを上記グ
リーンシートに電極として用いる銀ペーストを印刷した
のち、1mm×1mmの印刷パターンを用いて印刷、1
20℃で20分乾燥した。The resistance paste obtained by the above method is printed on the above green sheet with silver paste used as an electrode, and then printed using a print pattern of 1 mm × 1 mm, 1
It was dried at 20 ° C. for 20 minutes.
【0016】続いて、電極および抵抗が印刷されたグリ
ーンシートを中央に挟む形でグリーンシート3枚を10
0kgf/cm2、60〜80℃、5分の条件下で圧着
し、所定の大きさにシートを切断し、最高温度875
℃、最高温度保持時間20分にて焼成した。また、最上
層には電気特性測定用の銀電極を設け、銀ペーストを用
いたヴィアホールで、内部の電極と連結し、内部抵抗の
電気特性を測定可能とした。Subsequently, three green sheets are formed by sandwiching the green sheet on which electrodes and resistors are printed in the center.
0kgf / cm 2, 60~80 ℃, crimped under the conditions of 5 minutes, and cutting the sheet into a predetermined size, the maximum temperature 875
Firing was carried out at a temperature of 20 ° C for 20 minutes. Further, a silver electrode for measuring electric characteristics was provided on the uppermost layer, and it was connected to an internal electrode by a via hole using silver paste, so that electric characteristics of internal resistance could be measured.
【0017】上記方法により得られた抵抗内蔵低温焼成
基板について、抵抗値、抵抗値ばらつき(n=25、
C.V=(σn/x)×100)、断面観察による発泡
の有無を測定、観察した。その結果を表3に示す。な
お、得られた内蔵抵抗の膜厚は約10μmであった。With respect to the low-temperature fired substrate with a built-in resistor obtained by the above method, the resistance value and the resistance value variation (n = 25,
C. V = (σn / x) × 100), and the presence or absence of foaming was measured and observed by observing the cross section. Table 3 shows the results. The thickness of the obtained built-in resistor was about 10 μm.
【0018】表3の結果より、ルテニウム酸鉛1重量部
に対して、酸化ビスマスを1重量部以上含有することに
より、導電成分と基板材料との間の反応を抑制でき、抵
抗値ばらつきが小さく、低温焼成基板に内蔵可能である
抵抗ペーストが得られることがわかる。From the results shown in Table 3, by containing 1 part by weight or more of bismuth oxide with respect to 1 part by weight of lead ruthenate, the reaction between the conductive component and the substrate material can be suppressed, and the variation in resistance value can be reduced. It can be seen that a resistance paste that can be embedded in the low temperature fired substrate is obtained.
【0019】[0019]
【表1】 [Table 1]
【0020】[0020]
【表2】 [Table 2]
【0021】[0021]
【表3】 [Table 3]
【0022】[0022]
【発明の効果】以上説明したごとく、本発明に係る低温
焼成基板内蔵用抵抗ペーストは、導電成分と基板材料と
の間の反応を抑制できるので、抵抗値ばらつきが小さ
く、低温焼成基板に内蔵できるという優れた効果を有す
る。As described above, the resistance paste for embedding a low-temperature baked substrate according to the present invention can suppress the reaction between the conductive component and the substrate material, so that the resistance value variation is small and can be incorporated in the low-temperature baked substrate. It has an excellent effect.
Claims (2)
であり、導電成分としてルテニウム酸鉛を用いる抵抗ペ
ーストにおいて、ルテニウム酸鉛1重量部に対して、酸
化ビスマスを1重量部以上含有することを特徴とする低
温焼成基板内蔵用抵抗ペースト。1. A resistance paste which can be built-in or co-fired in a low temperature firing substrate and which uses lead ruthenate as a conductive component, contains 1 part by weight or more of bismuth oxide per 1 part by weight of lead ruthenate. The characteristic low-temperature fired substrate built-in resistor paste.
であり、導電成分としてルテニウム酸鉛を用いる抵抗ペ
ーストにおいて、ルテニウム酸鉛1重量部に対して、ガ
ラス組成の酸化ビスマスを1重量部以上含有するガラス
を用いることを特徴とする低温焼成基板内蔵用抵抗ペー
スト。2. A resistance paste which can be built-in or co-fired in a low temperature firing substrate and which uses lead ruthenate as a conductive component, contains 1 part by weight or more of bismuth oxide having a glass composition with respect to 1 part by weight of lead ruthenate. A low-temperature fired substrate built-in resistor paste, characterized by using a glass.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6317585A JP2929955B2 (en) | 1994-11-28 | 1994-11-28 | Resistive paste for low-temperature fired substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6317585A JP2929955B2 (en) | 1994-11-28 | 1994-11-28 | Resistive paste for low-temperature fired substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08153602A true JPH08153602A (en) | 1996-06-11 |
JP2929955B2 JP2929955B2 (en) | 1999-08-03 |
Family
ID=18089881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6317585A Expired - Fee Related JP2929955B2 (en) | 1994-11-28 | 1994-11-28 | Resistive paste for low-temperature fired substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2929955B2 (en) |
-
1994
- 1994-11-28 JP JP6317585A patent/JP2929955B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2929955B2 (en) | 1999-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |