JPH0612911A - Conductive composition and multilayer circuit board - Google Patents

Conductive composition and multilayer circuit board

Info

Publication number
JPH0612911A
JPH0612911A JP16780992A JP16780992A JPH0612911A JP H0612911 A JPH0612911 A JP H0612911A JP 16780992 A JP16780992 A JP 16780992A JP 16780992 A JP16780992 A JP 16780992A JP H0612911 A JPH0612911 A JP H0612911A
Authority
JP
Japan
Prior art keywords
circuit board
conductive
multilayer circuit
glass
wiring pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16780992A
Other languages
Japanese (ja)
Other versions
JP3419474B2 (en
Inventor
Takanori Ikuta
貴紀 生田
Yutaka Irumagawa
裕 入間川
Akira Imoto
晃 井本
Takuya Yokoyama
拓哉 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iwaki Glass Co Ltd
Kyocera Corp
Original Assignee
Iwaki Glass Co Ltd
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iwaki Glass Co Ltd, Kyocera Corp filed Critical Iwaki Glass Co Ltd
Priority to JP16780992A priority Critical patent/JP3419474B2/en
Publication of JPH0612911A publication Critical patent/JPH0612911A/en
Application granted granted Critical
Publication of JP3419474B2 publication Critical patent/JP3419474B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a multilayer circuit board stable in wiring pattern by using a composition which contains conductive metallic powder and glass flit where the degree of acid base is specified. CONSTITUTION:A conductive composition is composed of conductive metallic powder and glass flit 0.504 or over in degree of acid base. A multilayer circuit board is formed by interposing a baked substance layer rich in glass 0.504 or over in degree of acid base between an insulating substrate layer including glass material and a wiring pattern consisting of conductive material. The conductive metallic powder is a material low in melting point and small in resistivity value such as gold, silver, or copper, and it is desirable that this conductive material should be in powder shape. It is to be desired that the quantity of glass flit added should be set to 30-55vol.% of the volume of a conductive material. By this conductive composition, the reaction between the wiring pattern and the board material is suppressed, and a stable board property can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、導電性組成物及び多層
回路基板、特に、導電性金属粉末を含む導電性組成物及
びガラス材料を含む絶縁基板層を備えた回路基板に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive composition and a multilayer circuit board, and more particularly to a circuit board provided with a conductive composition containing a conductive metal powder and an insulating substrate layer containing a glass material.

【0002】[0002]

【従来の技術】電子機器の混成集積回路等に用いられる
回路基板として、例えば特開昭61−108192号に
は、金属酸化物からなるガラスフリットとアルミナ等の
無機材料フィラーとを含む回路基板用組成物からなる絶
縁基板層(以下、単に基板という)と、金系,銀系,銅
系等の低融点で比抵抗が小さな導電性材料からなる配線
パターンとが積層された多層回路基板が示されている。
この多層回路基板は、基板の比誘電率が小さく、回路パ
ターンの比抵抗が小さいので、信号伝搬速度が速い。ま
た、低温焼成が可能なため、安価に提供され得る。
2. Description of the Related Art As a circuit board used for a hybrid integrated circuit of electronic equipment, for example, Japanese Patent Application Laid-Open No. 61-108192 discloses a circuit board containing a glass frit made of a metal oxide and an inorganic material filler such as alumina. A multilayer circuit board in which an insulating substrate layer made of a composition (hereinafter, simply referred to as a substrate) and a wiring pattern made of a conductive material having a low melting point and a small specific resistance, such as a gold-based, silver-based, or copper-based material are laminated. Has been done.
The multilayer circuit board has a small relative permittivity of the board and a small specific resistance of the circuit pattern, and thus has a high signal propagation speed. Further, since it can be fired at a low temperature, it can be provided at a low cost.

【0003】[0003]

【発明が解決しようとする課題】前記従来の多層回路基
板では、基板と配線パターンとを一体焼結した際、高温
になると、配線パターンを構成している導電性材料が基
板層の内部や基板との界面に拡散してしまう場合があ
る。これは、導電性材料と基板を構成する金属酸化物中
の酸素とが反応して両者の間に弱い結合が生じ、見かけ
上導電性材料が酸化された状態になるためと考えられて
いる。このような現象が起こると、多層回路基板が変色
し、また誘電正接等の電気的特性が悪化する。
In the conventional multilayer circuit board described above, when the board and the wiring pattern are integrally sintered, when the temperature becomes high, the conductive material forming the wiring pattern is used inside the board layer or the board. May diffuse to the interface with. It is considered that this is because the conductive material reacts with oxygen in the metal oxide forming the substrate to form a weak bond between the two, and the conductive material is apparently in an oxidized state. When such a phenomenon occurs, the multilayer circuit board is discolored and the electrical characteristics such as dielectric loss tangent are deteriorated.

【0004】第1の発明の目的は、ガラス材料を含む基
板に対して安定な導電性組成物を提供することにある。
第2の発明の目的は、配線パターンが基板に対して安定
な多層回路基板を提供することにある。
An object of the first invention is to provide a stable conductive composition for a substrate containing a glass material.
A second object of the present invention is to provide a multilayer circuit board whose wiring pattern is stable with respect to the board.

【0005】[0005]

【課題を解決するための手段】第1の発明に係る導電性
組成物は、導電性金属粉末と、酸塩基度が0.504以
上の金属酸化物とを含んでいる。第2の発明に係る多層
回路基板は、ガラス材料を含む基板と、導電性材料から
なりかつ基板に配置された配線パターンとを備えたもの
である。この多層回路基板では、基板と配線パターンと
の間に、酸塩基度が0.504以上の金属酸化物の焼成
体層が形成されている。
The conductive composition according to the first invention contains a conductive metal powder and a metal oxide having an acid-basic degree of 0.504 or more. A multilayer circuit board according to a second aspect of the present invention includes a board containing a glass material and a wiring pattern made of a conductive material and arranged on the board. In this multilayer circuit board, a metal oxide fired body layer having an acid-base degree of 0.504 or more is formed between the board and the wiring pattern.

【0006】 *******導電性金属粉末 本発明で用いられる導電性金属粉末とは、金系、銀系又
は銅系等の低融点で比抵抗値が小さな導電材料を言う。
この導電材料は、粉末状が好ましい。この場合、導電材
料の平均粒径は、5〜25μm、特に10〜20μmが
好ましい。
*** Conductive Metal Powder The conductive metal powder used in the present invention refers to a conductive material having a low melting point and a small specific resistance value, such as gold, silver, or copper.
This conductive material is preferably in powder form. In this case, the average particle size of the conductive material is preferably 5 to 25 μm, particularly preferably 10 to 20 μm.

【0007】なお、前記導電材料は、2種以上併用され
ても良い。ガラスフリット 本発明で用いられるガラスフリットは、複数の金属酸化
物成分を含むものである。特に、酸塩基度が0.504
以上、好ましくは0.506以上、より好ましくは0.
508以上のガラスフリットである。これは、酸塩基度
が小さなガラスフリットは、その成分である金属酸化物
中の酸素が例えばイオン交換により引き抜かれ易いた
め、他の金属原子を取り込み易くなると考えられるため
である。言い換えると、上述の導電材料が基板を構成す
る金属酸化物中に拡散し、多層回路基板の電気特性を損
なうおそれがあるためである。
The conductive materials may be used in combination of two or more kinds. Glass Frit The glass frit used in the present invention contains a plurality of metal oxide components. Especially, the acidity is 0.504
Or more, preferably 0.506 or more, more preferably 0.
It is a glass frit of 508 or more. This is because the glass frit having a low acid-base degree is likely to take in other metal atoms because oxygen in the component metal oxide is easily extracted by, for example, ion exchange. In other words, the above-mentioned conductive material may diffuse into the metal oxide that constitutes the substrate, possibly impairing the electrical characteristics of the multilayer circuit board.

【0008】本発明で言う酸塩基度は、J.A.ダフィ
ー及びM.D.イングラムの論文(GLASS SCI
ENCE AND TECHNOLGY,,8)にお
いて規定されているものである。これによれば、i種類
の金属酸化物を含む、多成分系のガラスフリットの酸塩
基度(pO)は、次の式(1)によって規定される。
The acid-basicity referred to in the present invention is as described in J. A. Duffy and M.D. D. Ingram's paper (GLASS SCI
ENCE AND TECHNOLGY, 7 , 8). According to this, the acid basicity (pO) of the multi-component glass frit containing the i-type metal oxide is defined by the following formula (1).

【0009】[0009]

【数1】 [Equation 1]

【0010】式中、Ziは各金属酸化物に含まれる金属
成分の酸化数、eiは成分i中の酸素原子を1g原子と
した際の成分iの原子割合、Giは成分iの塩基性度で
ある。ここで、Giは、L.G.ポーリングの電気陰性
度Xiを用いて次の式(2)により求めることができる
ため、前記式(1)は次の式(3)のように書き換える
ことができる。
In the formula, Zi is the oxidation number of the metal component contained in each metal oxide, ei is the atomic ratio of the component i when the oxygen atom in the component i is 1 g atom, and Gi is the basicity of the component i. Is. Here, Gi is L. G. Since the electronegativity Xi of Pauling can be used to obtain the following equation (2), the equation (1) can be rewritten as the following equation (3).

【0011】[0011]

【数2】 [Equation 2]

【0012】[0012]

【数3】 [Equation 3]

【0013】本発明で用いられる酸塩基度が0.504
以上のガラスフリットは、例えばCaO、ThO2 、B
eO、SrO、MgO、Y2 3 、希土類酸化物、Sc
2 3 、BaO、HfO2 、ZrO2 、Al2 3 、L
2 O、TiO、CeO2 、SiO2 、B2 3 、Ta
2 5 、Cr2 3 及びZnOからなる群れから選ばれ
た金属酸化物を主成分としたものが好ましい。このよう
なガラスフリットは、主成分である金属酸化物が高温時
におけるギブスの生成自由エネルギーが小さな非還元性
酸化物であるため、非酸化性雰囲気で焼成する際でも還
元されない。
The acid-base degree used in the present invention is 0.504.
The above glass frit is, for example, CaO or ThO.2, B
eO, SrO, MgO, Y2O3, Rare earth oxides, Sc
2O 3, BaO, HfO2, ZrO2, Al2O3, L
i2O, TiO, CeO2, SiO2, B2O3, Ta
2OFive, Cr2O3And a group consisting of ZnO
It is preferable to use a metal oxide as a main component. like this
Glass frit is a main component of metal oxide at high temperature
Non-reducing Gibbs free energy of formation
Since it is an oxide, it can be returned even when firing in a non-oxidizing atmosphere.
It is not sourced.

【0014】上述のような非還元性酸化物を主成分とし
たガラスフリットの一例として、Al2 3 を18.0
モル%、SiO2 を50.0モル%、B2 3 を5.0
モル%、ZnOを9.0モル%及びMgOを18.0モ
ル%含むものが挙げられる。このガラスフリットでは、
各成分のXi、Zi及びeiは次の表1の通りである。
As an example of the glass frit containing a non-reducing oxide as a main component, Al 2 O 3 is 18.0.
Mol%, SiO 2 50.0 mol%, B 2 O 3 5.0
Examples include those containing mol%, 9.0 mol% ZnO and 18.0 mol% MgO. In this glass frit,
Xi, Zi and ei of each component are shown in Table 1 below.

【0015】[0015]

【表1】 [Table 1]

【0016】表1のデータに基づいて、前記式(3)に
よりpO値を求めると、0.5067となる。ここで、
上述のガラスフリットを例にして、ei値の求め方を説
明する。まず、ガラスフリット中の全酸素の原子量を計
算する。これは、成分ごとに酸素量を求め、これを加算
すると求められる。成分ごとの酸素量は、当該成分のガ
ラスフリット中の割合に、(酸素原子のモル数/当該成
分に含まれる原子のモル数の総和)を乗じると得られ
る。例えば、Al2 3 では、次の式(4)のようにな
る。
Based on the data in Table 1, the pO value obtained by the above equation (3) is 0.5067. here,
The method of obtaining the ei value will be described by taking the above glass frit as an example. First, the atomic weight of total oxygen in the glass frit is calculated. This is obtained by calculating the oxygen amount for each component and adding them. The amount of oxygen for each component can be obtained by multiplying the ratio of the component in the glass frit by (the number of moles of oxygen atoms / the total number of moles of atoms contained in the component). For example, with Al 2 O 3 , the following formula (4) is obtained.

【0017】[0017]

【数4】 [Equation 4]

【0018】これをSiO2 、B2 3 、ZnO及びM
gOについても計算し、得られた値を加算して全酸素の
原子量を求めると、0.61となる。各成分のeiは、
得られた全酸素の原子量を1とした場合の非酸素成分
(Al2 3 の場合はAl)の原子量から求められる。
Al2 3 のei値は、次の式(5)から導かれる。
This is treated with SiO 2 , B 2 O 3 , ZnO and M
When gO is also calculated and the obtained values are added to obtain the atomic weight of total oxygen, it becomes 0.61. The ei of each component is
It is determined from the atomic weight of the non-oxygen component (Al in the case of Al 2 O 3 ) when the atomic weight of the total oxygen obtained is 1.
The ei value of Al 2 O 3 is derived from the following equation (5).

【0019】[0019]

【数5】 [Equation 5]

【0020】また、本発明で用いられるガラスフリット
は、焼成後にコージェライト、ムライト、スピネル、ア
ノーサイト、セルジアン、β−スポジュメン、ドロマイ
ト、ベタライト及びその置換誘導体の結晶を少なくとも
1種析出する結晶化ガラスフリットであればより好まし
い。上述のような結晶を析出する結晶化ガラスフリット
を用いると、焼成後の強度がより高くなる。特に、アノ
ーサイト又はセルジアンを析出する結晶化ガラスフリッ
トを用いると、焼結体の強度が更に高くなる。なお、コ
ージェライト、ムライト又はβ−スポジュメンを析出し
得る結晶化ガラスフリットは、焼成後の熱膨張率が小さ
なため、IC等のシリコンチップ電子部品を搭載するた
めの配線パターンを構成する上で有効である。
The glass frit used in the present invention is a crystallized glass which precipitates at least one crystal of cordierite, mullite, spinel, anorthite, celdian, β-spodumene, dolomite, betalite and its substituted derivative after firing. A frit is more preferable. When a crystallized glass frit that precipitates the above-mentioned crystals is used, the strength after firing becomes higher. In particular, when a crystallized glass frit that precipitates anorthite or Celsian is used, the strength of the sintered body is further increased. Since crystallized glass frit capable of depositing cordierite, mullite or β-spodumene has a small coefficient of thermal expansion after firing, it is effective in constructing a wiring pattern for mounting silicon chip electronic components such as ICs. Is.

【0021】上述の結晶を析出する結晶化ガラスとして
特に好ましいのは、ネットワークホーマーとしてB2
3 とSiO2 とを含み、インターミディエイトとしてA
23 を含み、さらにネットワークモディファイヤー
としてアルカリ土類金属酸化物(MgO、CaO、Sr
O、BaO)又はZnOを含むガラスフリットである。
このようなガラスフリットは、ガラス化の範囲が広く、
また屈伏点が600〜800℃付近にあるため、本発明
に係る導電性組成物を800〜1050℃程度の低温焼
成するのに適している。なお、このガラスフリットにお
いて、ネットワークモディファイヤーとしてCaO、S
rO、又はBaOを選択すれば、アノーサイトやセルジ
アン等のRO・Al2 3 ・2SiO2 (Rはアルカリ
土類金属)系の結晶を析出させることができる。また、
MgOを選択すればコージェライトの結晶が得られ、Z
nOを選択すればガーナイトの結晶が得られる。
Particularly preferred as a crystallized glass for precipitating the above-mentioned crystals is B 2 O as a network homer.
Contains 3 and SiO 2 , A as an intermediate
l 2 O 3 , and further includes alkaline earth metal oxides (MgO, CaO, Sr) as a network modifier.
It is a glass frit containing O, BaO) or ZnO.
Such a glass frit has a wide range of vitrification,
Moreover, since the yield point is around 600 to 800 ° C., it is suitable for low temperature firing of the conductive composition according to the present invention at about 800 to 1050 ° C. In this glass frit, CaO and S are used as network modifiers.
If rO or BaO is selected, RO.Al 2 O 3 .2SiO 2 (R is an alkaline earth metal) type crystal such as anorthite or Celsian can be deposited. Also,
If MgO is selected, cordierite crystals can be obtained, and Z
If nO is selected, garnite crystals can be obtained.

【0022】上述のガラスフリットは、屈伏点が700
〜850℃であれば特に好ましい。屈伏点が700℃未
満の場合は、焼成時に軟化流動しすぎて上述の導電材料
の粒子表面に均一に分布しにくくなくなる。この結果、
多層回路基板上に本発明の導電性組成物による配線パタ
ーンを形成すると、導電材料と多層回路基板とが直接接
触し易くなる。したがって、多層回路基板がガラス材料
を含む場合は、回路基板内に導電材料が拡散し、回路基
板の電気特性が損なわれる場合がある。逆に、屈伏点が
850℃以上の場合は、焼結挙動が多層回路基板用のグ
リーンシートと近似するため、完全に軟化流動しきらな
い場合がある。この場合は、導電材料が回路基板に直接
接触してしまう。
The above glass frit has a yield point of 700.
It is especially preferable if it is ˜850 ° C. When the yield point is lower than 700 ° C., the softening flow excessively occurs during firing, and it becomes difficult for the conductive material to be uniformly distributed on the particle surface. As a result,
When a wiring pattern made of the conductive composition of the present invention is formed on a multilayer circuit board, the conductive material and the multilayer circuit board are likely to come into direct contact with each other. Therefore, when the multilayer circuit board contains a glass material, the conductive material may diffuse into the circuit board, and the electrical characteristics of the circuit board may be impaired. On the other hand, when the yield point is 850 ° C. or higher, the sintering behavior is similar to that of a green sheet for a multilayer circuit board, so that the softening and flowing may not be completed completely. In this case, the conductive material comes into direct contact with the circuit board.

【0023】上述のガラスフリットは、周知の方法によ
り製造される。すなわち、所定の成分を所定を比率で混
合して加熱溶融し、これを徐冷後に粉砕すると製造でき
る。ガラスフリットの平均粒径は、特に限定されるもの
ではないが、10μm以下、特に6〜8μmが好まし
い。平均粒径が10μmを超えると、本発明の組成物を
精密なパターンにスクリーン印刷するのが困難となり、
また焼成時の軟化流動が不充分な場合がある。導電性組成物 本発明の導電性組成物では、ガラスフリットの添加量を
導電材料の体積の30〜55容量%、特に40〜50容
量%に設定するのが好ましい。30容量%以下の場合
は、導電材料が基板と直接接触する場合があり、回路基
板の電気特性を損なうおそれがある。逆に、55容量%
を超えると、この組成物により形成できる配線パターン
の抵抗値が高くなる。したがって、信号の高速化が困難
となる。多層回路基板 図1は、第2の発明の一例に係る多層回路基板の縦断面
図である。この多層回路基板は、第1の発明に係る導電
性組成物を用いた配線パターンを有している。図におい
て、多層回路基板1は、積層基板2と内部配線3と表面
配線5とから主に構成されている。
The above-mentioned glass frit is manufactured by a known method. That is, it can be manufactured by mixing predetermined components in a predetermined ratio, heating and melting the mixture, gradually cooling it, and then pulverizing it. The average particle size of the glass frit is not particularly limited, but is preferably 10 μm or less, particularly 6 to 8 μm. If the average particle size exceeds 10 μm, it becomes difficult to screen print the composition of the present invention in a precise pattern,
Further, the softening flow during firing may be insufficient. Conductive Composition In the conductive composition of the present invention, the addition amount of glass frit is preferably set to 30 to 55% by volume, particularly 40 to 50% by volume of the volume of the conductive material. If the content is 30% by volume or less, the conductive material may come into direct contact with the substrate, which may impair the electrical characteristics of the circuit board. On the contrary, 55% by volume
When it exceeds, the resistance value of the wiring pattern formed by this composition becomes high. Therefore, it is difficult to speed up the signal. Multilayer Circuit Board FIG. 1 is a vertical sectional view of a multilayer circuit board according to an example of the second invention. This multilayer circuit board has a wiring pattern using the conductive composition according to the first invention. In the figure, a multilayer circuit board 1 is mainly composed of a laminated board 2, internal wiring 3 and surface wiring 5.

【0024】積層基板2は、基板となるグリーンシート
を3枚積層して一体焼成することにより得られた一体化
したシート2a,2b,2cから構成されている。各グ
リーンシートは、無機材料フィラーとガラスフリットと
を含む回路基板用組成物から構成されている。無機材料
フィラーは、積層基板2の強度を向上させるための成分
であり、クリストバライト、石英、コランダム(αアル
ミナ)、ムライト、安定化ジルコニア、ステアタイト、
フォルステライト、コージェライト、スピネル及びジル
コン等が例示できる。これらの無機材料フィラーは、2
種以上混合して用いられても良い。無機材料フィラーと
しては、特に石英、コランダム、コージェライトが好ま
しい。この場合、高強度の多層回路基板が実現できる。
また、基板の熱膨張係数が小さくなってシリコンの熱膨
張係数(40×10-7/℃前後)に近づくため、多層回
路基板1上に配置されたIC等のシリコンチップ電子部
品は、熱衝撃を受けても多層回路基板1から容易に離脱
しにくくなる。なお、無機材料フィラーとして、コラン
ダムを用いた場合は、上述の効果の他、コストパフォー
マンスの高い多層回路基板1が実現できる。
The laminated substrate 2 is composed of integrated sheets 2a, 2b and 2c obtained by laminating three green sheets to be substrates and integrally firing them. Each green sheet is composed of a composition for circuit boards containing an inorganic material filler and a glass frit. The inorganic material filler is a component for improving the strength of the laminated substrate 2, and includes cristobalite, quartz, corundum (α alumina), mullite, stabilized zirconia, steatite,
Forsterite, cordierite, spinel and zircon can be exemplified. These inorganic material fillers are 2
A mixture of two or more species may be used. Quartz, corundum, and cordierite are particularly preferable as the inorganic material filler. In this case, a high-strength multilayer circuit board can be realized.
In addition, since the thermal expansion coefficient of the substrate decreases and approaches the thermal expansion coefficient of silicon (around 40 × 10 −7 / ° C.), silicon chip electronic components such as ICs arranged on the multilayer circuit board 1 are subject to thermal shock. Even if it receives, it becomes difficult to easily separate from the multilayer circuit board 1. When corundum is used as the inorganic material filler, the multilayer circuit board 1 having high cost performance can be realized in addition to the above effects.

【0025】一方、ガラスフリットは、複数の金属酸化
物成分を含むものである。ガラスフリットとしては、B
2 3 ,SiO2 及びPbOを主成分とするもの、B2
3,SiO2 及びBaOを主成分とするもの、Ca
O,B2 3 及びSiO2 を主成分とするもの、SiO
2 ,B2 3 ,CaO及びAl2 3 を主成分とするも
の又はSiO2 ,B2 3 ,CaO及びZrO2 を主成
分とするものが例示できる。
On the other hand, the glass frit contains a plurality of metal oxide components. As a glass frit, B
2 O 3 , SiO 2 and PbO as main components, B 2
Mainly composed of O 3 , SiO 2 and BaO, Ca
Those containing O, B 2 O 3 and SiO 2 as main components, SiO
Examples thereof include those containing 2 , B 2 O 3 , CaO and Al 2 O 3 as main components or those containing SiO 2 , B 2 O 3 , CaO and ZrO 2 as main components.

【0026】内部配線3は、シート2a,2b間及びシ
ート2b,2c間に所定のパターンで形成されている。
内部配線3は、スルーホール4を通じて互いに接続され
ており、またスルーホール4を通じて積層基板2の表面
に延びている。積層基板2の表面に延びる内部配線3
は、その先端が積層基板2の図上面及び図下面で電極3
aを形成している。内部配線3は、上述の第1の発明に
係る導電性組成物を用いて構成されている。
The internal wiring 3 is formed in a predetermined pattern between the sheets 2a and 2b and between the sheets 2b and 2c.
The internal wirings 3 are connected to each other through the through holes 4 and extend to the surface of the laminated substrate 2 through the through holes 4. Internal wiring 3 extending on the surface of the laminated substrate 2
Of the electrode 3 on the upper surface and the lower surface of the laminated substrate 2
a is formed. The internal wiring 3 is formed by using the conductive composition according to the first invention described above.

【0027】表面配線5は、積層基板2の図上面及び下
面に配置されている。表面配線5は、上述の第1の発明
に係る導電性組成物を用いて所定の回路パターンに形成
されている。次に、前記多層回路基板1の製造方法につ
いて説明する。まず、上述の回路基板用組成物と、有機
バインダー(例えばポリメタクリレート樹脂)と、可塑
剤(例えばジブチルフタレート)と、溶剤(例えばメチ
ルエチルケトン)と、他の添加物(例えば消泡剤)とを
所定の割合で混合し、これをボールミルを用いて24〜
72時間程度混練して均質なスラリーを調整する。この
スラリーを、脱泡処理した後に例えばドクターブレード
法等の公知の方法により100〜300μm程度の厚み
のグリーンシートに成形する。このグリーンシートに
は、所定部位にスルーホールを設ける。
The surface wirings 5 are arranged on the upper surface and the lower surface of the laminated substrate 2 in the figure. The surface wiring 5 is formed in a predetermined circuit pattern by using the conductive composition according to the first invention described above. Next, a method of manufacturing the multilayer circuit board 1 will be described. First, the above-mentioned circuit board composition, an organic binder (for example, polymethacrylate resin), a plasticizer (for example, dibutyl phthalate), a solvent (for example, methyl ethyl ketone), and other additives (for example, a defoaming agent) are predetermined. At a ratio of 24 to 40 by using a ball mill.
Knead for about 72 hours to prepare a homogeneous slurry. After defoaming the slurry, it is molded into a green sheet having a thickness of about 100 to 300 μm by a known method such as a doctor blade method. This green sheet is provided with through holes at predetermined locations.

【0028】次に、得られたグリーンシートの表面に所
定の内部配線パターン又は表面配線パターンを形成す
る。両配線パターンは、スルーホールに第1の発明に係
る導電性組成物のペースト(以下、導電性ペーストと言
う)を充填し、次いでグリーンシートの表面に導電性ペ
ーストを所定のパターンに印刷すると形成できる。な
お、導電性ペーストは、第1の発明に係る導電性組成物
に有機バインダーと溶剤とを添加して混練すると得られ
る。有機バインダーとしては、例えばエチルセルロース
が用いられる。また、溶剤としては、例えばMIBE、
2,2,4−トリメチル−1,3−ペンタンジオールモ
ノイソブチレートなどが用いられる。なお、配線パター
ンを印刷した後に、スルーホールに導電性ペーストを充
填してもよい。
Next, a predetermined internal wiring pattern or surface wiring pattern is formed on the surface of the obtained green sheet. Both wiring patterns are formed by filling the through holes with the paste of the conductive composition according to the first invention (hereinafter referred to as conductive paste), and then printing the conductive paste in a predetermined pattern on the surface of the green sheet. it can. The conductive paste is obtained by adding an organic binder and a solvent to the conductive composition according to the first invention and kneading the mixture. As the organic binder, for example, ethyl cellulose is used. As the solvent, for example, MIBE,
2,2,4-trimethyl-1,3-pentanediol monoisobutyrate or the like is used. In addition, after printing the wiring pattern, the through holes may be filled with a conductive paste.

【0029】次に、配線パターンが印刷されたグリーン
シートを所定の順に積層して熱圧着等し、積層体を得
る。そして、得られた積層体を所定の大きさに切断して
焼成する。積層体の焼成は、2段階に行うのが好まし
い。第1段階目の焼成は、グリーンシート等に含まれて
いる有機物(有機バインダー類)の除去を目的とする。
この焼成温度は、通常500℃前後である。第2段階目
の焼成は、回路基板用組成物と導電性組成物の焼成を目
的とする。この時の焼成温度は、各組成物に含まれる材
料の融点に基づいて決定されるが、通常800〜105
0℃程度である。なお、焼成雰囲気は、導電性組成物に
含まれる導電材料に応じて適宜調整される。例えば、銅
系の導電性ペーストが用いられている場合は、非酸化性
雰囲気下で焼成する。焼成が完了すると、前記多層回路
基板1が得られる。
Next, the green sheets on which the wiring patterns are printed are laminated in a predetermined order and subjected to thermocompression bonding to obtain a laminated body. Then, the obtained laminated body is cut into a predetermined size and fired. The firing of the laminate is preferably performed in two steps. The first-stage firing aims at removing organic substances (organic binders) contained in the green sheet or the like.
The firing temperature is usually around 500 ° C. The firing in the second stage aims at firing the composition for circuit boards and the conductive composition. The firing temperature at this time is determined based on the melting points of the materials contained in each composition, and is usually 800 to 105.
It is about 0 ° C. The firing atmosphere is appropriately adjusted according to the conductive material contained in the conductive composition. For example, when a copper-based conductive paste is used, firing is performed in a non-oxidizing atmosphere. When firing is completed, the multilayer circuit board 1 is obtained.

【0030】得られた多層回路基板1では、図2に示す
ように、積層基板2のシート2a,2bと内部配線3と
の間にガラスリッチ層6が形成されている。なお、図2
は、図1のA部の拡大模式図である。このガラスリッチ
層6は、導電性ペースト中に含まれるガラスフリットに
よるものであり、内部配線3がシート2a,2bと直接
接触するのを防止している。また、ガラスリッチ層6
は、酸塩基度が0.504以上のガラスリッチ層である
ため、多層回路基板1の焼成時や、多層回路基板1が高
温で使用された場合でも、内部配線3を構成する金系、
銀系又は銅系等の導電材料が拡散しにくい。したがっ
て、内部配線3を構成する導電材料は、積層基板2内に
拡散しにくい。この結果、多層回路基板1は、変色しに
くく、また誘電正接等の電気特性が低下しにくい。
In the obtained multilayer circuit board 1, as shown in FIG. 2, the glass-rich layer 6 is formed between the sheets 2a and 2b of the laminated board 2 and the internal wiring 3. Note that FIG.
[Fig. 2] is an enlarged schematic view of part A of Fig. 1. The glass-rich layer 6 is formed by the glass frit contained in the conductive paste and prevents the internal wiring 3 from directly contacting the sheets 2a and 2b. In addition, the glass-rich layer 6
Is a glass-rich layer having an acid-base degree of 0.504 or more, and therefore, even when the multilayer circuit board 1 is fired or when the multilayer circuit board 1 is used at a high temperature, a gold-based material that constitutes the internal wiring 3,
A conductive material such as silver or copper is less likely to diffuse. Therefore, the conductive material forming the internal wiring 3 is unlikely to diffuse into the laminated substrate 2. As a result, the multilayer circuit board 1 is less likely to undergo discoloration and is less likely to deteriorate in electrical characteristics such as dielectric loss tangent.

【0031】前記多層回路基板1には、表面配線5の所
定部位(例えば表面配線5と電極3aとの間)にIC等
の電子部品や厚膜抵抗体等が配置される。
On the multilayer circuit board 1, electronic parts such as ICs, thick film resistors, etc. are arranged at a predetermined portion of the surface wiring 5 (for example, between the surface wiring 5 and the electrode 3a).

【0032】[0032]

【実施例】実施例1〜18 銀粉末と表3、表4及び表5に示すガラスフリットとの
混合物100重量部に対し、エチルセルロース(有機バ
インダー)5.0重量%と、2,2,4−トリメチル−
1,3−ペンタンジオールモノイソブチレート(溶剤)
95.0重量%とを混合し、さらに3本ロールミルによ
り混練して導電性ペーストを作成した。なお、ガラスフ
リットを構成する各金属酸化物に関する上述の電気陰性
度Xi及び酸化数Ziは、表2に示す通りである。
Examples 1 to 18 5.0 parts by weight of ethyl cellulose (organic binder), 2,2,4, based on 100 parts by weight of a mixture of silver powder and the glass frits shown in Tables 3, 4 and 5. -Trimethyl-
1,3-Pentanediol monoisobutyrate (solvent)
95.0% by weight was mixed and further kneaded with a three-roll mill to prepare a conductive paste. The electronegativity Xi and the oxidation number Zi of each metal oxide forming the glass frit are shown in Table 2.

【0033】[0033]

【表2】 [Table 2]

【0034】一方、MgO,Al2 3 及びSiO2
主成分とするガラスフリット44.0重量%と、アルミ
ナ19.0重量%と、アクリル系樹脂6.5重量%と、
ジブチルフタレート(可塑剤)2.5重量%と、トルエ
ン28.0重量%とをボールミルを用いて混合し、回路
基板用組成物を製造した。この回路基板用組成物からド
クターブレード法により数枚のグリーンシートを形成し
た。そして、グリーンシートに、上述の導電性ペースト
をスクリーン印刷し、所定の配線パターンを形成した。
On the other hand, 44.0% by weight of a glass frit containing MgO, Al 2 O 3 and SiO 2 as main components, 19.0% by weight of alumina and 6.5% by weight of an acrylic resin,
2.5 wt% of dibutyl phthalate (plasticizer) and 28.0 wt% of toluene were mixed using a ball mill to produce a composition for circuit boards. Several green sheets were formed from this composition for circuit boards by the doctor blade method. Then, the above-mentioned conductive paste was screen-printed on the green sheet to form a predetermined wiring pattern.

【0035】次に、グリーンシートを4枚積層して熱圧
着し、これを900℃の酸化雰囲気中でピーク時間を3
0分に設定して焼成した。得られた多層回路基板につい
て、変色の有無と電気的特性を調べた。変色は、EPM
A(X線マイクロアナライザー)及び比色分析により判
定した。電気的特性は、誘電正接を調べた。誘電正接
は、容量測定器(YHP製4297型)によるブリッジ
法により測定した。なお、誘電正接は、7以下が好まし
い値である。結果を表3、表4及び表5に示す。
Next, four green sheets were laminated and thermocompression bonded, and this was subjected to an oxidizing atmosphere at 900 ° C. for a peak time of 3 times.
It was set at 0 minutes and baked. The presence or absence of discoloration and the electrical characteristics of the obtained multilayer circuit board were examined. Discoloration is EPM
It was judged by A (X-ray microanalyzer) and colorimetric analysis. For the electrical characteristics, the dielectric loss tangent was examined. The dielectric loss tangent was measured by the bridge method using a capacitance meter (YHP model 4297). The dielectric loss tangent is preferably 7 or less. The results are shown in Tables 3, 4, and 5.

【0036】[0036]

【表3】 [Table 3]

【0037】[0037]

【表4】 [Table 4]

【0038】[0038]

【表5】 [Table 5]

【0039】表3、表4及び表5から明らかなように、
ガラスフリットの酸塩基度が0.506以上、さらに
0.508以上であれば、多層回路基板の誘電正接がよ
り良好になる。
As is clear from Table 3, Table 4 and Table 5,
When the acid-basicity of the glass frit is 0.506 or more, more preferably 0.508 or more, the dielectric loss tangent of the multilayer circuit board becomes better.

【0040】[0040]

【発明の効果】第1の発明に係る導電性組成物は、酸塩
基度が0.504以上のガラスフリットを含んでいるた
め、ガラス材料を含む基板に対して安定である。第2の
発明に係る多層回路基板は、基板と配線パターンとの間
に上述のガラスリッチ層が生成されるため、配線パター
ンと基板材料との反応が抑制され、安定した基板特性が
得られる。
The conductive composition according to the first invention is stable against a substrate containing a glass material because it contains a glass frit having an acid-base ratio of 0.504 or more. In the multilayer circuit board according to the second aspect of the present invention, since the above-mentioned glass-rich layer is formed between the board and the wiring pattern, the reaction between the wiring pattern and the board material is suppressed, and stable board characteristics are obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】第2の発明に係る回路基板の一例の縦断面部分
図。
FIG. 1 is a partial vertical cross-sectional view of an example of a circuit board according to a second invention.

【図2】図1のA部の拡大模式図。FIG. 2 is an enlarged schematic view of part A of FIG.

【符号の説明】[Explanation of symbols]

1 多層回路基板 2 積層基板 3 内部配線 5 表面配線 1 multilayer circuit board 2 laminated board 3 internal wiring 5 surface wiring

───────────────────────────────────────────────────── フロントページの続き (72)発明者 入間川 裕 鹿児島県国分市山下町1−1 京セラ株式 会社鹿児島国分工場内 (72)発明者 井本 晃 鹿児島県国分市山下町1−1 京セラ株式 会社鹿児島国分工場内 (72)発明者 横山 拓哉 千葉県千葉市美浜区稲毛海岸1丁目2番15 棟402号 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yutaka Irumagawa 1-1 Yamashita-cho, Kokubun-shi, Kagoshima Prefecture Kyocera stock company Kagoshima Kokubun factory (72) Akira Imoto 1-1 Yamashita-cho, Kokubun-shi, Kagoshima Kagoshima stock company Kokubun Plant (72) Inventor Takuya Yokoyama 1-215, Inagekaigan, Mihama-ku, Chiba, Chiba Prefecture Building No. 402

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】導電性金属粉末と、 酸塩基度が0.504以上のガラスフリットと、 を含む導電性組成物。1. A conductive composition comprising a conductive metal powder and a glass frit having an acid-base degree of 0.504 or more. 【請求項2】ガラス材料を含む絶縁基板層と、導電性材
料から成る配線パターンとが積層されて構成された多層
回路基板において、 前記絶縁基板層と前記配線パターンとの間には、酸塩基
度が0.504以上のガラスリッチ焼成体層が介在され
ていることを特徴とする多層回路基板。
2. A multi-layer circuit board comprising an insulating substrate layer containing a glass material and a wiring pattern made of a conductive material, wherein the insulating substrate layer and the wiring pattern have an acid-base group. A multi-layer circuit board, wherein a glass-rich fired body layer having a degree of 0.504 or more is interposed.
JP16780992A 1992-06-25 1992-06-25 Conductive composition and multilayer circuit board Expired - Lifetime JP3419474B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16780992A JP3419474B2 (en) 1992-06-25 1992-06-25 Conductive composition and multilayer circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16780992A JP3419474B2 (en) 1992-06-25 1992-06-25 Conductive composition and multilayer circuit board

Publications (2)

Publication Number Publication Date
JPH0612911A true JPH0612911A (en) 1994-01-21
JP3419474B2 JP3419474B2 (en) 2003-06-23

Family

ID=15856510

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3419474B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103594A (en) * 2005-10-03 2007-04-19 Shoei Chem Ind Co Resistor composition and thick film resistor
JP2010238958A (en) * 2009-03-31 2010-10-21 Mitsubishi Materials Corp Conductive composition, manufacturing method of solar cell using the same, and solar cell
JP2012059547A (en) * 2010-09-09 2012-03-22 Shoei Chem Ind Co Conductive paste
TWI483269B (en) * 2010-07-13 2015-05-01 Shoei Chemical Ind Co Conductive paste

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103594A (en) * 2005-10-03 2007-04-19 Shoei Chem Ind Co Resistor composition and thick film resistor
JP2010238958A (en) * 2009-03-31 2010-10-21 Mitsubishi Materials Corp Conductive composition, manufacturing method of solar cell using the same, and solar cell
TWI483269B (en) * 2010-07-13 2015-05-01 Shoei Chemical Ind Co Conductive paste
JP2012059547A (en) * 2010-09-09 2012-03-22 Shoei Chem Ind Co Conductive paste

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