JPH08127869A - Ion beam sputtering device - Google Patents

Abstract

PURPOSE: To form a thin film small in the distribution of film thickness on a substrate having a relatively large area by expanding the irradiating region of ion beams knocking out atoms from the surface of a target by using a deflection electrode. CONSTITUTION: In a vacuum vessel V, the space between an ion source l and a target 2 is applied with a potential, and argon ions in the ion source 1 are radiated at a high speed to form an ion beam A. By this ion beam A, atoms are knocked out from the surface of the target 2 and are deposited on the surface of a substrate 4 attached to a substrate holder 3 rotated by a rotary shaft 7 to form a thin film. At this time, the vicinity of the edge part of the ion source 1 is provided with an electrostatic deflection electrode 5 symmetrically to the ion beam A, which is driven by a deflection power source 6, by which the ion beams A are deflectionally scanned linearly to the space between B1 -B2 on the surface of the target 2, and the irradiating region of the ion beams A is expanded. Thus, the distributing region of the atoms deposited on the surface of the substrate 4 is expanded, so that a thin film small in the distribution of film thickness can be formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam sputtering apparatus, and more particularly to an ion beam sputtering apparatus equipped with a deflecting device between an ion source and a target.

[0002]

2. Description of the Related Art A conventional example of an ion beam sputtering apparatus will be described with reference to FIG. FIG. 2 is a diagram conceptually explaining the ion beam sputtering apparatus. In FIG. 2, 1 is an ion source and 2 is a target. The target 2 is composed of a substance to be formed into a film. Between the ion source 1 and the target 2, a potential of about +1 kV with the ion source 1 being the ground potential is applied.
Reference numeral 3 denotes a substrate holder, and 4 denotes a substrate. The substrate 4 is held by the substrate holder 3 and positioned near the target 2. V indicates a vacuum container of the ion beam sputtering apparatus. The ion source 1, the target 2, the substrate holder 3, and the substrate 4 are housed and installed in the vacuum container V.

In the ion source 1 described above, argon is ionized by the discharge. The ionized positively charged argon ions are ion source 1
Since the potential of about +1 kV is applied between the target 2 and the target 2 as described above, the target 2 is radiated from the ion source 1 and accelerated at a high speed by this potential, and the target 2 is formed in the ion beam A. collide. As a result, the atoms constituting the target are knocked out from the surface of the target 2. The atoms that make up the target that have been hit from the surface of target 2 are target 2.
Deposited on the surface of the substrate 4 which is positioned in the vicinity of. Regarding the emission direction of the atoms knocked out from the surface of the target 2, this is emitted in a hemispherical shape centering around the collision of the ion beam A on the surface of the target 2, but the amount or density of the emitted atoms is More concentrated on the surface of the target 2 and in the vertical direction.

In the ion beam sputtering as described above, assuming that the substrate 4 is stationary, the substrate 4
The film deposited and formed on the surface has a film thickness distribution as shown in FIG. Here, FIG. 4A is a diagram showing a profile C of the film thickness distribution in the ion beam sputtering, and assuming that the region indicated by B on the surface of the target 2 is the ion beam irradiation region, the profile of the film thickness distribution is C Like FIG. 4B is a diagram showing the coating film deposited on the surface of the substrate 4 as viewed from above.
It is shown that the coating is thick in the region of the small circle D in the center, and the coating becomes thinner as it moves away from it.

In order to make the film deposited on the surface of the substrate 4 a film having a uniform thickness without a film thickness distribution, in the conventional example of the ion beam sputtering apparatus shown in FIG. 2, the substrate holder 3 is a vacuum container. While rotating with respect to V,
A configuration is adopted in which the substrate 4 is rotated with respect to the substrate holder 3. That is, by rotating and revolving the substrate 4 on which the coating is to be formed with respect to the target 2, the mutual positional relationship between the surface of the substrate 4 and the target 2 is not fixed, and the film thickness distribution is made uniform. There is.

As described above, the substrate 4 to be coated is formed.
By rotating and revolving the target 2 with respect to the target 2, the film thickness distribution can be made uniform to some extent. However, this has its limits. That is, the method of rotating and revolving the substrate 4 also provides good results when the area of the substrate 4 is relatively small. However, as shown in FIG. 3, the area of the substrate 4 is large. In some cases, it becomes necessary to make the rotation and revolution more complicated.

Referring to FIG. 5, FIG.
It is a figure corresponding to (a), and Drawing 5 (b) is a figure corresponding to Drawing 4 (b). In FIG. 5, the ion beam irradiation region B on the surface of the target 2 is greatly enlarged in comparison with the case of FIG. 4 corresponding to the large area of the substrate 4. By doing so, it can be seen that the film thickness distribution shown in FIG. 5B is improved as compared with the film thickness distribution shown in FIG. 4B. However, expanding the ion beam irradiation area B on the surface of the target 2 means
This means that the diameter of the ion source 1 is enlarged, and in order to realize this, it is necessary to enlarge the ion source 1 and, in connection with this, make various modifications and changes in other configurations.

[0008]

DISCLOSURE OF THE INVENTION The present invention is an ion which can form a thin film having a small film thickness distribution on a relatively large area of a substrate without remodeling a conventional ion beam sputtering apparatus. A beam sputtering apparatus is provided.

[0009]

A substrate holder 3 having an ion source 1 for generating and emitting an inert gas ion beam, a target 2 made of a substance to be deposited, and a substrate 4 for holding a substrate 4 to be sputtered is provided. In the provided ion beam sputtering apparatus, the ion beam sputtering apparatus is provided with deflection devices arranged so as to face each other with respect to the ion beam emitted from the ion source 1, and with a rotating device for rotating the substrate holder 3.

Then, the deflection device constituted an ion beam sputtering device which is an electrostatic deflection electrode. In addition, the ion beam sputtering device is characterized in that the deflection device is an electromagnetic deflection magnetic pole.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described with reference to FIG. FIG. 1A is a diagram conceptually explaining an ion beam sputtering apparatus. FIG. 1B is a view showing a coating film deposited on the surface of the substrate 4 as seen from above.
(C) It is a figure which shows the place which looked at the coating film formed by rotating a board | substrate holder from above.

In FIG. 1A, V indicates a vacuum container of the ion beam sputtering apparatus. 1 is an ion source. In the ion source 1, a discharge is generated in a dilute inert gas such as argon to ionize the argon and generate positively charged argon ions. Reference numeral 2 is a target, which is composed of a substance to be formed into a film. Between the ion source 1 and the target 2, a potential of about +1 kV with the ion source 1 being the ground potential is applied. Argon ions generated in the ion source 1 are radiated from the ion source 1 because the potential of about +1 kV is applied between the ion source 1 and the target 2 as described above, and the argon ions are accelerated by this potential. And is collided with the target 2 in the state of being formed into the ion beam A. As a result, the atoms constituting the target are knocked out from the surface of the target 2. Reference numeral 3 denotes a substrate holder, and 4 denotes a substrate. The substrate holder 3 is pivotally supported on the vacuum container V by a rotating shaft shown by 7. The rotary shaft 7 is rotationally driven by a motor. The substrate 4 is held by the substrate holder 3 and the target 2 is held.
Is positioned near the. The ion source 1, the target 2, the substrate holder 3, and the substrate 4 are housed and installed in a vacuum container V. Reference numeral 5 denotes an electrostatic deflection electrode, which is symmetrically opposed to the ion beam A emitted from the ion source 1 and is arranged near the end of the ion source 1. A deflection power source 6 drives the electrostatic deflection electrode 5.

Here, the electrostatic deflection electrode 5 is driven by the deflection power source 6.
By driving, an electric field is generated between the electrostatic deflection electrodes 5 in a direction orthogonal to the electrostatic deflection electrodes. Since the ion beam A emitted from the ion source 1 toward the target 2 is orthogonal to this electric field, electrostatic force in the electric field direction is applied to the ion beam A. By oscillating the potential of the deflection power source 6 between zero potential, the ion beam A can be linearly deflected and scanned between B1 and B2 on the surface of the target 2, and the irradiation area of the ion beam A is greatly expanded. Will be. Ion beam A
The fact that the irradiation area on the surface of the target 2 is enlarged by means that the area where atoms are knocked out from the surface of the target 2 is also enlarged.

By the way, the film thickness distribution formed on the surface of the stationary substrate 4 is a concentric circle as shown in FIG. 4 (b) or 5 (b) in the conventional example in which the ion beam A is not linearly scanned. According to the present invention in which the ion beam A is linearly scanned, the concentric film thickness distribution is
The elliptical distribution shown in FIG. 1 (b), which is stretched corresponding to 1-B2, is obtained. Since the amount of ion radiation radiated from the ion source 1 per unit time is constant, the distribution of atoms knocked out from the surface of the target 2 and deposited on the surface of the substrate 4 is only as large as the distribution region is expanded. Averaged.

As described above, by linearly scanning the surface of the target 2 with the ion beam A, the film thickness distribution of atoms constituting the target 2 deposited and formed on the surface of the stationary substrate 4 is shown in FIG. It is enlarged as shown and averaged in the scanning direction of the ion beam A. In the present invention, the substrate holder 3 is further rotated about the rotating shaft 7, and the substrate 4 held by the substrate holder 3 is also rotated facing the target 2. When the film thickness distribution deposited and formed on the surface of the stationary substrate 4 is as shown in FIG. 1B, the substrate holder 3 is rotated and the substrate 4 held by the substrate holder 3 is rotated, so that the surface of the substrate 4 is Atomic deposits are also averaged in the direction of rotation.

The film thickness distribution formed by linearly averaging the deposition of atoms on the surface of the substrate 4 and averaging the rotation direction of the substrate 4 is uniform as shown in FIG. 1 (c). In the above-described embodiment, the electrostatic deflection electrode is used as the deflecting device, but this can similarly deflect the ion beam even if it is driven by the deflection power source 6 as the electromagnetic deflection magnetic pole.

[0017]

As described above, according to the present invention, the ion source 1 is provided between the ion source and the target.
Electrostatic deflection electrodes or electromagnetic deflection magnetic poles are arranged so as to face each other with respect to the ion beam radiated by, and the substrate holder 3 holding the substrate 4 is rotationally driven, thereby remarkably modifying the conventional ion beam sputtering apparatus. It is possible to configure an ion beam sputtering apparatus capable of forming a thin film having a small film thickness distribution on a substrate having a relatively large area without performing the process.

[Brief description of drawings]

FIG. 1 is a diagram illustrating an example.

FIG. 2 is a diagram illustrating a conventional example.

FIG. 3 is a diagram illustrating another conventional example.

FIG. 4 is a diagram illustrating a film thickness distribution.

FIG. 5 is a diagram illustrating another film thickness distribution.

[Explanation of symbols]

 1 ion source 2 target 3 substrate holder 4 substrate 5 deflection electrode

Claims (3)

[Claims] 1. An ion beam sputtering apparatus comprising an ion source for generating and radiating an inert gas ion beam, a target made of a material for film formation, and a substrate holder for holding a substrate to be sputtered. An ion beam sputtering apparatus comprising: a deflecting device that is arranged to face each other with respect to an ion beam emitted from an ion source; and a rotating device that rotates a substrate holder. 2. The ion beam sputtering apparatus according to claim 1, wherein the deflection device is an electrostatic deflection electrode. 3. The ion beam sputtering apparatus according to claim 1, wherein the deflection device is an electromagnetic deflection magnetic pole.