JP2005187864A - Film deposition apparatus and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method capable of producing a film of the uniform thickness with high production efficiency while realizing excellent film quality. <P>SOLUTION: A cylindrical substrate holder 5 having the hexagonal section is disposed in a film deposition chamber 2 of a film deposition apparatus, and a substrate 6 is mounted on six side surfaces of the substrate holder 5 with a back side of the substrate abutted thereon. In the magnetic transport process in a plasma duct 3 using the magnetic field generated in an induction magnetic field generator 4 from the difference in the particle movement characteristic, ionized particles out of evaporated particles generated in an arc evaporation chamber 1 are separated from droplets and neutral particles, and fed to the film deposition chamber 2. The ionized particles fed to the film deposition chamber 2 include those to form plasma beam under the restriction of the magnetic field and those diffused without restriction of the magnetic field. Here, the diffused ionized particles are adhered to and deposited on the surface of the substrate 6 to form the film. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a film forming apparatus and a film forming method for forming a thin film on a surface of a substrate using evaporated particles generated by evaporating a film forming material with an evaporation source, and more particularly, to an evaporated particle generated with an arc evaporation source as a magnetic field. The present invention relates to a film forming apparatus and a film forming method for transporting and forming a film.

  As one type of ion plating apparatus, there is a film forming apparatus that forms a thin film on the surface of a substrate using arc discharge. An arc evaporation chamber in which arc discharge is performed includes a cathode and an anode. At the time of film formation, arc discharge is performed between the cathode and the anode to evaporate a target made of a film forming material (usually the cathode corresponds to the target) to generate evaporated particles. The evaporated particles are mainly ionized particles that are ionized film forming material particles (specifically, the cathode material is ionized and charged), electrons, neutral particles of the film forming material, And droplets that are film-forming material strips and the like. Here, the ionized particles and electrons are collectively referred to as charged particles. Plasma is formed by the charged particles, and ionized particles among the charged particles are deposited on the surface of the substrate in a film forming chamber disposed downstream of the arc evaporation chamber to form a thin film (see, for example, Patent Document 1). .

Among the vaporized particles generated in the arc evaporation chamber, droplets and neutral particles are by-products, and when these (for example, submicron to several tens of micron size droplets) enter the film, the surface of the film Becomes non-smooth and the film thickness becomes non-uniform. Therefore, there is an apparatus configured to separate charged particles contained in evaporated particles obtained from an arc evaporation chamber from droplets and neutral particles as by-products and use only charged particles for film formation. For example, there is a configuration in which a particle transport path for supplying charged particles from the evaporation chamber to the film formation chamber has a bent structure. In such a configuration, the evaporated particles are magnetically transported in the bent particle transport path, and in this transport process, the charged particles are separated from the droplets and the neutral particles due to the difference in the moving direction of the particles. The separated charged particles are supplied to the film formation chamber and deposited on the surface of the substrate to form a film (see, for example, Patent Document 2). Therefore, in such an apparatus, it is possible to prevent droplets and neutral particles from entering the film.
JP-A-7-150340 Japanese Patent No. 3159949

  The charged particles in the plasma state that are magnetically transported as described above are converged under the influence of the magnetic field (lines of magnetic force) in the transport process, and form a beam-like plasma flux. Hereinafter, such charged charged particles are called plasma beams. In the film formation chamber, a film is formed by irradiating the substrate with a plasma beam. Here, in such film formation by plasma beam irradiation, the film thickness of the film to be formed becomes thicker in a region where the beam intensity (that is, plasma density) is larger in the irradiated region. FIG. 10 is a diagram showing the relationship between the intensity of the plasma beam and the film thickness, and the horizontal axis in the figure shows the distance from the center of the beam. Here, the beam center is 0, the rightward direction in the radial direction is a positive region, and the leftward direction is a negative region. Also, here, A, B, and C are shown with different distances from the beam entrance of the film forming chamber to the substrate surface, and A is the shortest distance and becomes longer in the order of B and C. As shown in FIG. 10, in the plasma beam, the intensity at the center of the beam increases and the beam intensity decreases as it goes toward the outer periphery. Therefore, the film thickness increases at the portion corresponding to the beam center, and at the portion corresponding to the beam outer periphery. The film thickness becomes thin. Therefore, the film formed on the substrate surface has a non-uniform film thickness. As described above, the film thickness distribution of the formed film is affected by the intensity distribution of the irradiated plasma beam (that is, the plasma density distribution).

  On the other hand, there is a method of making the film thickness uniform by disposing the substrate away from the plasma inlet of the film formation chamber and increasing the irradiation distance of the plasma beam to reduce variations in beam intensity. However, this method requires a long time for film formation because the film formation rate is low. Therefore, it is necessary to improve the deposition rate for mass production.

  In the film formation by plasma beam irradiation as described above, since the film formation region is limited to the beam irradiation region, the film formation area cannot be increased. As a method for expanding the film formation range, there is a method of expanding the irradiation region by irradiating a beam. In this case, the film formation speed is reduced and the configuration of the apparatus is complicated.

  The present invention has been made to solve the above-described problems, and provides a film forming apparatus and a film forming method capable of producing a film with a uniform film thickness with high productivity while realizing good film quality. The purpose is that.

  In order to solve the above problems, a film forming apparatus and a film forming method according to the present invention include an evaporation unit that evaporates a film forming material to generate evaporated particles including at least ionized particles, droplets, and neutral particles, A film-forming portion in which a bias supply electrode is disposed and the ionized particles are deposited on a surface of a substrate disposed on the bias supply electrode to form a film; and the ionized particles are converted into the droplets and the neutral particles. A transport unit having one end connected to the evaporation unit and the other end connected to the film forming unit, and an induced magnetic field generating unit for generating a magnetic field that guides the ionized particles to the film forming unit. The ionized particles are transferred to the film forming part through the transport part by a bias voltage applied to the bias supply electrode and the magnetic field formed by the induction magnetic field generating part. The fed, in the film forming section, in which the film using a spreading plasma-like ionized particles other than ionizing particles forming the plasma flux under the influence of the magnetic field is performed.

  According to such a configuration, film formation is performed using diffusion plasma-like ionized particles that are not influenced or hardly influenced by the magnetic field, so that the magnetic field intensity distribution does not affect the film thickness, and thus uniform. A film having a thickness can be formed over a wide range. In addition, when film formation is performed using ionized particles that form a plasma flux, it is necessary to place a substrate in the irradiation region of the plasma flux. In the case of using ionized particles, since there are few restrictions on the arrangement of the substrate, the area where the substrate can be arranged increases. Therefore, it is possible to perform film formation with high productivity by effectively using these regions. Since the film thus obtained does not contain droplets and neutral particles, good film quality is realized.

  The transport part may have a bent structure.

  The evaporation unit may include an arc evaporation source that generates the evaporated particles by arc discharge.

  Guiding means for guiding the diffusion plasma-like ionized particles to the film forming surface of the substrate may be further provided.

  The position of the substrate in the film forming unit may be adjustable.

  A plurality of the substrates may be disposed in the film forming unit.

  The bias supply electrode is a substrate holder made of a conductive material, the substrate is disposed on the substrate holder, and the film formation surface of the substrate is located in a region excluding the irradiation region of the plasma flux. A substrate holder may be disposed in the film forming unit.

  The substrate may be disposed on the substrate holder such that a film formation surface is parallel to a supply direction of the plasma flux.

  The substrate may be disposed on the substrate holder so that the ionized particles in the form of diffusion plasma are supplied to the film formation surface from a substantially vertical direction.

  The substrate may be disposed on the substrate holder with a film formation surface inclined with respect to the plasma flux supply direction.

  The substrate holder includes a cylindrical main body for attaching the substrate therein and a support for supporting the main body, and an axis is arranged in the plasma flux supply direction in the film forming unit, and the plasma flow The main body may be arranged so as to surround the outer periphery of the bundle.

  The main body may have a polygonal cross section.

  The main body may have a tapered shape whose cross section decreases along the plasma flux supply direction.

  The substrate holder may be configured to be capable of adjusting a position of the main body portion in the plasma flux supply direction in the film forming unit.

  The substrate holder may be configured such that the main body portion is rotatable in an outer peripheral direction of the plasma flux.

  The substrate may be configured to be rotatable within the main body of the substrate holder.

  According to the film forming apparatus and the film forming method of the present invention, it is possible to form a film having a good film quality and a uniform film thickness with good productivity.

(Embodiment 1)
FIG. 1 is a schematic diagram showing a configuration of a film forming apparatus according to Embodiment 1 of the present invention. FIG. 2 is a plan view showing the arrangement of the substrates in the substrate holder of FIG.

  As shown in FIGS. 1 and 2, the film forming apparatus includes an arc evaporation chamber 1, a film forming chamber 2, and a plasma duct 3 as main components. The plasma duct 3 is connected to the arc evaporation chamber 1 and the film forming chamber 2, respectively, so that the arc evaporation chamber 1 and the film forming chamber 2 communicate with each other through the plasma duct 3. The device is assembled so that a vacuum state can be realized in this communicating interior. Although not shown here, the film forming apparatus includes an evacuation unit such as a vacuum pump for evacuating the inside of the apparatus.

  The arc evaporation chamber 1 includes a cathode 1A and an anode 1B inside, and an arc evaporation source is configured by the cathode 1A and the anode 1B. The arc evaporation source is connected to an arc power source (not shown).

  The cathode 1A is made of a film forming material, and therefore the cathode 1A corresponds to the target here. It is also possible to separately arrange a target made of a film forming material on the surface of the cathode 1A. The constituent material of the target cathode 1A is not particularly limited as long as it is a solid having conductivity, and a simple metal, an alloy, an inorganic simple substance, an inorganic compound, or the like is used. These may be used alone or in combination of two or more. Further, a pair of anodes 1 </ b> B are disposed opposite to the arc evaporation chamber 1. The constituent material of the anode 1B is not particularly limited as long as the cathode 1A has high heat resistance and conductivity, and a simple metal, an alloy, an inorganic simple substance, an inorganic compound, or the like is used. These may be used alone or in combination of two or more.

  Here, in the following description, particles obtained by evaporation of the cathode constituent material in the arc evaporation chamber 1 are referred to as evaporation particles. The evaporated particles mainly include ionized particles that are ionized cathode constituent materials, electrons, neutral particles of the cathode constituent materials, and those in which the cathode constituent materials are in the form of strips or liquids (hereinafter referred to as the “particles”). , This is called a droplet). Here, as described above in the related art, the charged ionized particles and electrons are collectively referred to as charged particles. The charged particles form a plasma.

  A substrate holder 5 made of a conductive material is disposed inside the film forming chamber 2. The substrate holder 5 is composed of a cylindrical body 5A having a polygonal cross section, and the bottom of the cylindrical body 5A is sealed with an end plate 5B. Here, the substrate holder 5 is composed of a cylindrical body 5A having a hexagonal cross section. A substrate (workpiece) 6 as a film formation target is attached to the six side surfaces inside the substrate holder 5 with the back surface in contact with the side surfaces so that the film formation surface faces the inside of the substrate holder 5. An end plate 5B at the bottom of the substrate holder 5 has a rotating shaft 7 whose other end penetrates the bottom surface of the film forming chamber 2 and is connected to an external rotation drive device (specifically, a motor) 10. It is attached coaxially. The substrate holder 5 is supported by the rotating shaft 7, and when the rotating shaft 7 is rotationally driven by the motor 10, the substrate holder 5 attached to the tip of the rotating shaft 7 also rotates. The rotating shaft 7 is made of a conductive material, and is electrically connected to an ion integrated power supply 20 disposed outside. The ion integrated power source 20 may be a direct current (DC) power source, a radio frequency (RF) power source, or a combination thereof. Such an ion integrated power source 20 is grounded.

  One end of the plasma duct 3 is connected to a plasma inlet 11 formed on the upper wall of the film forming chamber 2, and the other end is connected to an evaporated particle outlet 12 of the arc evaporation chamber 1. The plasma duct 3 has a bent structure, and the transport path from the arc evaporation chamber 1 to the film forming chamber 2 is bent by 90 ° to be L-shaped. The vertically arranged portion of the plasma duct 3 and the substrate holder 5 are arranged coaxially.

  On the outer periphery of the plasma duct 3, an induction magnetic field generator 4 is disposed as a guiding means for guiding charged particles among the evaporated particles generated in the arc evaporation chamber 1 to the film forming chamber 2. For example, the induction magnetic field generator 4 is composed of a ring-shaped electromagnet made of a coil, and an electromagnet is disposed at a predetermined position of the plasma duct 3 so as to surround the outer periphery of the duct tube. Thereby, a magnetic field coaxial with the plasma duct 3 is formed. The magnetic field formed by the induction magnetic field generator 4 may be a cusp magnetic field or a mirror magnetic field. When a magnetic field is generated by the induction magnetic field generator 4, electrons in the evaporated particles are captured by the magnetic field, and subsequently, the ionized particles in the evaporated particles move by being attracted by the captured electrons. In this way, charged particles are induced by the magnetic field.

  Next, the film forming operation of the film forming apparatus will be described.

  During film formation, first, the inside of the apparatus is evacuated by an evacuation means (not shown), and the inside is kept at a predetermined degree of vacuum. A bias voltage is applied from the ion integrated power source 20 to the substrate holder 5 via the rotating shaft 7, and evaporated particles are generated by arc discharge in the arc evaporation chamber 1 as described below.

  That is, arc discharge is performed between the cathode 1A and the anode 1B of the arc evaporation chamber 1, and thereby the constituent material of the cathode 1A is evaporated to generate evaporated particles. As described above, the evaporated particles include charged particles (ionized particles and electrons), droplets, and neutral particles.

  The vaporized particles thus generated are introduced into the plasma duct 3 from the vaporized particle outlet 12 of the arc vaporization chamber 1, move in the duct pipe along the pipe wall in the horizontal direction, and reach the bent portion. In the bent portion, the ionized particles and electrons, which are charged particles in the evaporated particles, are induced by the bias voltage applied to the substrate holder 5 and the magnetic field formed by the induction magnetic field generating device 4, and as indicated by the arrow a. The moving direction is deflected by 90 °, and the inside of the duct pipe is moved vertically downward along the pipe wall toward the film forming chamber 2. Thus, the charged particles moving in the plasma duct 3 toward the film forming chamber 2 constitute a plasma, and this plasma is converged under the restriction of the magnetic field formed by the induction magnetic field generator 4 to be in a beam shape. The plasma flux is formed. Here, this plasma flux is called a plasma beam 15. The plasma beam 15 is coaxial with the plasma duct 3 and the formed magnetic field.

  On the other hand, since the droplets and neutral particles in the evaporated particles introduced from the arc evaporation chamber 1 into the plasma duct 3 are not charged, they are not induced by a bias voltage or an induced magnetic field like charged particles. . Therefore, as shown by the arrow b, the bent portion of the plasma duct 3 is not deflected like a charged particle, but moves in the plasma duct 3 in the horizontal direction and collides with the facing inner wall of the duct. As described above, the ionized particles and the electrons can be separated from the droplets and the neutral particles by using the bent structure of the plasma duct 3 due to the difference in the movement characteristics of the particles.

  As described above, the plasma beam 15 that is guided by the bias voltage and the induction magnetic field and travels through the plasma duct 3 is introduced into the film forming chamber 2 from the plasma inlet 11. When the plasma beam 15 is introduced into the film forming chamber 2 in this way, the film forming chamber 2 moves in a beam shape while being restrained by a magnetic field, and ionized particles and electrons (hereinafter referred to as a beam shape). (Referred to as a particle group) and ionized particles and electrons (hereinafter referred to as a diffusion particle group) diffused by being released from the restriction of the magnetic field. The ionized particles of this diffusing particle group are accelerated mainly by the bias voltage, and collide and adhere to the film forming surface of the substrate 6 disposed on the side surface of the substrate holder 5. By such adhesion and deposition of ionized particles of the diffusing particle group, a film made of the cathode constituting material is formed on the film forming surface of the substrate 6. Note that the electrons introduced into the film formation chamber 2 are either captured by a magnetic field or diffused in the chamber.

  As described above, in this embodiment, since film formation is performed using ionized particles in a diffused state released from the constraint of the magnetic field formed for magnetic transport (or having a small influence of the magnetic field), ionization is performed. It is possible to reduce the influence of the magnetic field on the particle distribution state, for example, the influence of the magnetic field intensity distribution, the arrangement of the lines of magnetic force, and the like. Accordingly, a film with a uniform thickness can be formed.

  Here, in order to explain the effect of the present embodiment, the relationship between the magnetic field and the film thickness will be described with reference to FIG. FIG. 3 is a diagram showing the relationship between the magnetic field strength and the film thickness when film formation is performed by irradiating a plasma beam formed in the magnetic transport process perpendicularly to a substrate disposed in the film formation chamber. . Here, the case where the distance from the plasma inlet to the substrate in the film formation chamber is A and B is shown, and A <B. FIG. 3A shows the magnetic flux density distribution, and FIG. 3B shows the film thickness distribution. The horizontal axis of FIGS. 3A and 3B indicates the distance from the center of the substrate. The center is 0, the rightward direction in the radial direction is a positive region, and the leftward direction is a negative region. A disk-shaped substrate is disposed concentrically with the plasma duct in the film forming chamber, so that the center axis of the plasma beam and the center of the substrate coincide with each other.

  As shown in FIG. 3A, the strength of the magnetic field formed around the substrate is greatest near the center of the substrate, and decreases with distance from the center. Further, the shorter the distance from the plasma inlet of the film formation chamber to the substrate, the greater the magnetic flux density of the magnetic field formed around the substrate, and the greater the difference in magnetic flux density between the vicinity of the center and the outer peripheral side. In the film formed by irradiating the substrate with the plasma beam affected by such a magnetic field, as shown in FIG. 3B, the distribution is similar to the distribution of the magnetic flux density, and the film thickness is the largest near the center of the substrate. The film thickness decreases as the distance from the center increases. Further, the closer the distance from the plasma inlet to the substrate, the thicker the film thickness and the greater the difference in film thickness between the vicinity of the center and the outer peripheral side. Thus, in film formation using a plasma beam affected by a magnetic field, there is a correlation between the film thickness and the magnetic field strength, and the film thickness is distributed according to the magnetic field strength distribution. For this reason, the variation in film thickness increases.

  For this reason, in this embodiment, film formation is not performed using ionized particles (that is, plasma beams) of a beam-like particle group affected by a magnetic field, but is not influenced by a magnetic field (or has a small effect). ) Film formation is performed using ionized particles of the diffusing particle group. Here, the substrate 6 is disposed so as to deviate from the region to which the beam-like particle group is supplied (that is, the region irradiated with the plasma beam), thereby enabling film formation using ionized particles of the diffusion particle group. . Specifically, since the substrate 6 is disposed on the side surface of the substrate holder 5, the film formation surface of the substrate 6 is parallel to the supply direction of the beam-like particle group (the direction of the arrow c). The ionized particles do not adhere to the substrate surface, and the ionized particles of the diffusing particle group diffused in the film forming chamber 2 without being affected by the magnetic field adhere. Therefore, it is possible to form a film using ionized particles dispersed almost uniformly. Therefore, regardless of the distance from the plasma inlet 11 to the substrate 6, the position of the substrate holder 5, etc. It is possible to form a film having a uniform thickness on the surface and between the six substrates 6. In particular, since the film formation is performed by rotating the substrate holder 5 here, it is possible to prevent variations in film thickness among a plurality of substrates. Furthermore, since diffused ionized particles are used, film formation on a wide range of film formation surfaces becomes possible.

  As described above, in the present embodiment, since film formation is performed using ionized particles of a diffusion particle group that has not been conventionally used for film formation, it is possible to suppress the influence of the magnetic transport magnetic field during film formation. Therefore, it is possible to form a film with a uniform film thickness over a wide range. In the present embodiment, as described above, since the ionized particles are separated from the droplets and the neutral particles in the transport process in the plasma duct 3, it is possible to obtain a film having a good film quality.

  As apparent from FIGS. 3A and 3B described above, since the deposition rate increases as the influence of the magnetic field increases, in the deposition using ionized particles that are not affected by the magnetic field as described above, the magnetic field Compared to film formation using a plasma beam that is strongly influenced, the film formation rate is reduced. Therefore, when forming a film having the same film thickness, it takes a longer time to form a film using diffused ionized particles. However, in film formation using diffused ionized particles, the substrate 6 may be disposed in a region other than the region irradiated with the plasma beam. Therefore, the substrate 6 is disposed as compared with the case where film formation is performed by irradiation with the plasma beam. In this case, six substrates 6 can be arranged on the substrate holder 5. Therefore, it is possible to form a film on a plurality of substrates at the same time with a single film formation. Therefore, in this film forming apparatus, although the time required for film formation for each substrate 6 becomes long, high film formation efficiency can be realized in consideration of the number of substrates 6 that can be formed simultaneously at the same time. . In particular, since it is possible to form a film on a plurality of substrates 6 at the same time, it is possible to reduce the time required for replacing the substrate 6 and the time required for starting and stopping the apparatus accompanying the replacement. High productivity can be realized.

  In the above description, the case where the cross section of the substrate holder 5 has a hexagonal shape has been described. However, the cross sectional shape of the substrate holder 5 is not limited to this, and in consideration of film formation efficiency and productivity, It is preferable to use the substrate holder 5 having an appropriate shape according to the film forming conditions. Although the case where a plurality of substrates 6 are arranged on the same substrate holder 5 has been described here, a plurality of substrate holders are independently arranged in the film forming chamber 2 and each has a substrate attached thereto. There may be. Further, the case where the substrate holder 5 is rotated by the motor 10 has been described above, but the substrate holder 5 may be fixed.

  In the above description, the case where the substrate 6 is disposed on the side surface of the substrate holder 5 has been described. However, the substrate 6 may be disposed on the bottom surface of the substrate holder 5 (that is, the surface of the end plate 5B). In this way, the productivity can be further improved by effectively using the surface of the substrate holder 5. When the substrate 6 is disposed on the bottom surface of the substrate holder 5, if the distance between the plasma inlet 11 and the substrate 6 is short, the ionized particles are affected by the magnetic field, so the magnetic field strength distribution affects the film thickness. If the distance from the substrate 6 is sufficient to prevent the magnetic field from affecting, a uniform film thickness can be achieved even on the substrate 6 disposed on the bottom surface. When the substrate 6 is disposed on the bottom surface with a sufficient distance in this way, the film forming speed is low with the substrate 6 alone, but in this case, the substrate 6 is simultaneously formed with the plurality of substrates 6 disposed on the side surface of the substrate holder 5. Since the film is formed, the film can be formed with good film formation efficiency.

  As a modified example of the present embodiment, a configuration in which a by-product collection unit is provided on the inner wall portion of the plasma duct 3 where the droplets and neutral particles collide may be used. For example, the by-product collection part may be comprised from the collection member formed so that attachment or detachment was possible. In this case, droplets and neutral particles that have not been ionized are collected by the collection member. And it becomes possible to remove a by-product by exchanging or cleaning this collection member.

  Further, as another modification of the present embodiment, a configuration may be provided in which particle diffusion means for promoting diffusion of ionized particles supplied into the film forming chamber 2 is further provided. As the particle diffusing means, for example, a magnetic field generator or the like is used. As a specific example, an electromagnet or permanent magnet may be further arranged as a particle diffusing unit on the outer peripheral side of the substrate holder 5 of the film forming apparatus having the above-described configuration, and a diffusion magnetic field of ionized particles may be generated around each substrate 6. Good. Since the diffusion of ionized particles is promoted by this diffusion magnetic field and the distribution of ionized particles becomes more uniform, the film thickness can be made uniform and the film forming speed can be further improved.

(Example)
In the examples, in order to clarify the above effects in the present embodiment, film formation was performed at the laboratory level and the effects were examined.

  FIG. 4 is a schematic diagram illustrating a configuration of a film forming apparatus in the embodiment. As shown in FIG. 4, the film forming apparatus of the embodiment has an arc evaporation chamber 1, a film forming chamber 2, an arc evaporation chamber 1, and a film forming chamber 2 in which a cathode 1 </ b> A composed of Cu that also serves as a target is arranged. And a plasma duct 3 for connecting the two. The plasma duct 3 has a bent structure capable of deflecting the traveling direction of charged particles in the evaporated particles generated in the arc evaporation chamber 1. An induction magnetic field generator 4 that generates an induction magnetic field for guiding charged particles to the film forming chamber 2 is disposed on the outer periphery of the plasma duct 3.

  In the film forming chamber 2, a cylindrical glass container is disposed as the substrate holder 5. The substrate holder 5 is disposed coaxially with the plasma duct 3 with the upper open end abutting against the upper wall of the film forming chamber 2, whereby the plasma duct 3 communicates with the inside of the holder. Inside the substrate holder 5, a long substrate 6A is disposed over the entire circumference of the side surface, and a disc-shaped substrate 6B is concentrically disposed on the bottom surface.

  During film formation of the film forming apparatus having the above configuration, the cathode 1A as a target is evaporated by arc discharge in the arc evaporation chamber 1 to generate evaporated particles, and the evaporated particles are introduced into the plasma duct 3 through the throttle member 1C. The The evaporated particles travel in the plasma duct 3 along the tube wall in the horizontal direction and reach the bent portion. In the bent portion, of the evaporated particles, ionized particles and electrons, which are charged particles, are induced by the magnetic field and bias voltage formed by the induced magnetic field generating means 4 to deflect the traveling direction by 90 °, and the film forming chamber 2 Proceeding downward in the plasma duct 3 along the tube wall. And it introduce | transduces into the inside of the substrate holder 5 arrange | positioned in the film-forming chamber 2. FIG. On the other hand, since the droplets and neutral particles in the evaporated particles are not charged, they are not affected by the induced magnetic field, and thus travel straight and collide with the inner wall of the plasma duct 3 while maintaining the traveling direction in the horizontal direction. . In this way, it is possible to separate charged particles from the evaporated particles generated in the arc evaporation chamber 1 using the bent structure of the plasma duct 3.

  Of the ionized particles supplied to the inside of the substrate holder 5, diffused ionized particles adhere to and deposit on the film formation surfaces of the substrates 6A and 6B inside the holder. Thereby, a Cu film is formed on the surfaces of the substrates 6A and 6B.

  5A is a diagram illustrating the thickness of the Cu film formed on the substrate 6A disposed on the side surface of the substrate holder 5, and FIG. 5B is formed on the substrate 6B disposed on the bottom surface of the substrate holder 5. It is a figure which shows the thickness of the Cu film | membrane. The horizontal axis y in FIG. 5A indicates the distance from the upper opening end of the substrate holder 5 as indicated by the arrow y in FIG. Also, the horizontal axis x in FIG. 5B indicates the distance from the substrate center as indicated by the arrow x in FIG. 4, with the substrate center as 0, the radial direction rightward is a positive region, and the leftward is a negative region. .

  As shown in FIG. 5A, a Cu film having a substantially uniform film thickness is formed on the surface of the substrate 6A disposed on the side surface of the substrate holder 5. Further, as shown in FIG. 5B, a Cu film having a thickness greater than that of the Cu film formed on the side substrate 6A is formed on the surface of the substrate 6B disposed on the bottom surface of the substrate holder 5, and the substrate 6A is formed on the substrate 6A. Although the uniformity of the film was lower than that of the film, a film having a good film thickness distribution was obtained as compared with the comparative examples described later.

(Comparative example)
In order to compare with the above examples, film formation was performed by the following method.

  In the comparative example, the film forming apparatus of the example is used. Here, the distances A and B (here, A <B) are closer to the upper opening end of the substrate holder 5 than the substrate 6B of the above example. Then, a disc-like substrate 6 was arranged concentrically in parallel with the bottom surface of the substrate holder 5, and film formation was performed by irradiating plasma-form ionized particles perpendicularly to the film formation surface of the substrate 6.

  FIG. 6 is a diagram showing the thickness of the Cu film formed on the substrate 6 by the method of the comparative example. The horizontal axis x in FIG. 6 is the same as the horizontal axis in FIG. 5A. As shown in FIG. 6, in the comparative example, the film thickness of the Cu film formed on the substrate surface was the thickest in the vicinity of the center of the substrate, and the film thickness was decreased as the distance from the center was increased. Further, the closer the distance from the upper opening end of the substrate holder 5 was, the thicker the film thickness and the greater the difference in film thickness between the center and the outer peripheral side.

As is clear from the above examples and comparative examples, according to the method of the present embodiment, it was possible to form a Cu film having a uniform thickness.
(Embodiment 2)
FIG. 7 is a schematic partial perspective view showing the configuration of the substrate holder of the film forming apparatus according to Embodiment 2 of the present invention. As shown in FIG. 7, the film forming apparatus according to the present embodiment is different from the first embodiment in that the substrate holder 5 rotates around the rotation shaft 7 and the substrate 6 rotates in the substrate holder 5. ing. In the following, the rotation of the substrate holder 5 around the rotation shaft 7 is referred to as revolution, and the rotation of the individual substrates 6 in the substrate holder 5 is referred to as rotation. Here, the rotating shaft 7 and the substrate holder 5 connected to the motor 10 and driven to rotate correspond to the substrate revolving mechanism, and the mechanism for further rotating the substrate 6 in the revolving substrate holder 5 corresponds to the substrate revolving mechanism. .

  As shown in FIG. 7, the rotation mechanism 8 includes a shaft body 8A, a board attachment portion 8B configured by a hook provided on the outer peripheral surface of the shaft body 8A, and a drive device 8C that rotationally drives the shaft body 8A. It is configured. 8 A of shaft bodies are comprised from the electroconductive material, and are arrange | positioned in parallel with the central axis of the substrate holder 5 from the upper surface of the substrate holder 5 to the bottom face. The driving device 8 </ b> C is connected to the motor 10 and rotates the shaft body 8 </ b> A independently of the rotating shaft 7. Here, corresponding to each of the six side surfaces of the substrate holder 5 having a hexagonal cross section, the rotation mechanism 8 having such a configuration is provided.

  At the time of film formation, the motor 10 rotates the rotating shaft 7 to rotate the substrate holder 5, and the rotation of the motor 10 is transmitted to the shaft body 8A via the driving device 8C to rotate the shaft body 8A. Thereby, the substrate 6 attached to the substrate attachment portion 8B of the shaft body 8A rotates (revolves) around the rotation shaft 7 360 degrees in the forward or backward direction with the clock as the substrate holder 5 rotates. As the shaft body 8A rotates, the substrate 6 rotates (rotates) around the shaft body 8A by a predetermined angle in the forward and backward directions with respect to the clock.

  According to the present embodiment having such a configuration, not only the substrate 6 revolves around the rotation shaft 7 as the substrate holder 5 rotates, but also the substrate 6 is moved inside the substrate holder 5 by the rotation mechanism 8. Thus, the film thickness can be made more uniform in the film formation. In addition, the rotation method of the board | substrate 6 in the board | substrate holder 5 is not limited above, The structure rotated 360 degrees around the shaft body 8A may be sufficient.

Here, the present embodiment is not limited to the above-described configuration as long as the substrate is configured to rotate and revolve, and may include other revolving mechanisms. For example, as a modification of the present embodiment, the substrate 6 attached to the side surface of the substrate holder 5 may be configured to rotate in the same plane around the normal line of the side surface. For example, a configuration may be adopted in which a rotation support base is attached to the side surface of the substrate holder 5 and the substrate 6 is disposed on the rotation support base, and the substrate 6 rotates (spins) as the rotation support base rotates.
(Embodiment 3)
FIG. 8 is a schematic diagram showing a configuration of a film forming apparatus according to Embodiment 3 of the present invention. As shown in FIG. 8, the film forming apparatus of the present embodiment has the same configuration as that of the first embodiment, but differs from the first embodiment in the following points.

  That is, in the present embodiment, the substrate holder 5 is configured to be vertically movable in the film forming chamber 2 by the substrate holder lifting device 9. For example, the substrate holder lifting device 9 is composed of an actuator.

According to this configuration, the position (height) of the substrate 6 in the film forming chamber 2 can be adjusted by moving the substrate holder 5 up and down by the substrate holder lifting device 9. For this reason, even if there is variation in the diffusion state of ionized particles in the film formation chamber 2, it is possible to efficiently form a film having a uniform film thickness by adjusting the position of the substrate 6 according to the diffusion state. It becomes possible. For example, the film thickness at the time of film formation is detected by a film thickness monitor, and the height of the substrate 6 in the film formation chamber 2 is adjusted by controlling the substrate holder elevating device 9 according to the detected film thickness. In this case, the substrate holder lifting / lowering device 9 is controlled so that the thick part is disposed at a small ionized particle density and the thin part is disposed at a large ionized particle density. . Thereby, the adhesion and deposition of particles are suppressed where the ionized particle density is low, and the adhesion and deposition of particles are promoted where the ionized particle density is high, so that the film thickness can be made uniform. Therefore, it is possible to form a film having a uniform film thickness stably.
(Embodiment 4)
FIG. 9 is a schematic diagram showing a configuration of a film forming apparatus according to Embodiment 4 of the present invention. As shown in FIG. 9, the film forming apparatus of the present embodiment has the same configuration as that of the first embodiment, but the shape of the substrate holder 5 is different from that of the first embodiment.

  That is, the substrate holder 5 of the present embodiment has a tapered shape whose cross section increases toward the upper opening end. In the substrate holder 5 having such a shape, the side surface of the substrate holder 5 on which the substrate 6 is disposed has a predetermined angle inclination with respect to the central axis of the substrate holder 5. Therefore, in this configuration, the surface of the substrate 6 disposed on the side surface of the substrate holder 5 is inclined at a predetermined angle with respect to the central axis of the plasma beam 15 supplied from the plasma duct 3 into the film forming chamber 2. . In the substrate 6 arranged in this way, film formation is performed using ionized particles of the diffusing particle group instead of ionized particles of the beam-like particle group, as in the case of the first embodiment. Figured. Further, in the present embodiment, since the substrate 6 is inclined, the incident angle of ionized particles colliding with the substrate surface can be made substantially perpendicular to the substrate surface. For this reason, it becomes possible to form a denser film with better film quality, and it is possible to improve the film forming utilization rate of the diffused ionized particles and improve the film forming speed.

  In the present embodiment in which ionized particles can be supplied from a direction perpendicular to the substrate surface, in particular, when a wiring film of a semiconductor device is formed by forming a Cu film so as to fill a recess formed in a groove shape, etc. Is effective. In this case, the concave portions can be embedded with high accuracy and efficiency by causing the ionized particles to collide with the substrate surface from the vertical direction.

  The present invention is not limited to the configurations of the first to fourth embodiments, and various design changes are possible. For example, in the substrate holder, the substrate may be configured to reciprocate like a pendulum through a bottom surface between a pair of opposing side surfaces of the substrate holder. It may be configured to be supplied continuously.

  In the first to fourth embodiments, the case where the film-forming material is evaporated using the arc evaporation source has been described. However, the evaporation source applicable to the present invention is not limited to the arc evaporation source. Absent. For example, a sputter evaporation source or the like may be used.

  In the first to fourth embodiments, the case where the inside of the apparatus is evacuated during film formation has been described. For example, film formation is performed while supplying a gas such as nitrogen, oxygen, argon, or hydrogen. Also good. In this case, a gas supply means for supplying these gases is provided.

The film forming apparatus and the film forming method according to the present invention can be applied to various types of film forming by evaporating a film forming material, for example, an optical film (such as a TiO ₂ film) such as a reflective film, The present invention can be applied to the formation of a wiring film, a seed film, etc. of a semiconductor device. This is particularly effective when film formation on a substrate having a large film formation area is required, or when film formation excellent in mass productivity is required.

It is a schematic diagram which shows the structure of the film-forming apparatus which concerns on Embodiment 1 of this invention. It is a top view which shows arrangement | positioning of the board | substrate to the substrate holder in the film-forming apparatus of FIG. It is a figure which shows the relationship between the magnetic flux density in an induction magnetic field, and the film thickness of the film | membrane formed into a film under this magnetic field. 3 is a diagram illustrating a film formation method in an example of Embodiment 1. FIG. It is a figure which shows the film thickness of the film | membrane formed into a film by the film-forming method of the Example of FIG. It is a figure which shows the film thickness of the film | membrane formed into a film by the film-forming method of the comparative example. It is a schematic diagram which shows the structure of the substrate holder of the film-forming apparatus which concerns on Embodiment 2 of this invention. It is a schematic diagram which shows the structure of the film-forming apparatus which concerns on Embodiment 3 of this invention. It is a schematic diagram which shows the structure of the film-forming apparatus which concerns on Embodiment 4 of this invention. It is a figure which shows the film thickness of the film | membrane formed into a film by the conventional film-forming method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Arc evaporation chamber 2 Deposition chamber 3 Plasma duct 4 Induction magnetic field generator 5 Substrate holder 6 Substrate 7 Rotating shaft 8 Rotating mechanism 9 Substrate holder lifting device 10 Motor 20 Ion integrated power supply

Claims (17)

An evaporation unit that evaporates the film-forming material to generate evaporated particles including at least ionized particles, droplets, and neutral particles;
A film forming unit in which a bias supply electrode is disposed, and the ionized particles are deposited on a surface of a substrate disposed on the bias supply electrode to form a film;
A transport unit configured to be capable of separating the ionized particles from the droplets and the neutral particles, one end of which is connected to the evaporation unit and the other end of which is connected to the film forming unit;
An induction magnetic field generating unit that generates a magnetic field for guiding the ionized particles to the film forming unit,
The ionized particles are supplied to the film formation unit through the transport unit by the bias voltage applied to the bias supply electrode and the magnetic field formed by the induction magnetic field generation unit,
In the film forming section, the film forming apparatus is characterized in that the film forming is performed using ionized particles in a diffusion plasma form other than ionized particles that form a plasma flux under the influence of the magnetic field.   The film forming apparatus according to claim 1, wherein the transport portion has a bent structure.   The film forming apparatus according to claim 1, wherein the evaporation unit includes an arc evaporation source that generates the evaporated particles by arc discharge.   The film forming apparatus according to claim 1, further comprising guiding means for guiding the diffusion plasma-like ionized particles to a film forming surface of the substrate.   The film forming apparatus according to claim 1, wherein the position of the substrate in the film forming unit is adjustable.   The film forming apparatus according to claim 1, wherein a plurality of the substrates are arranged in the film forming unit. The bias supply electrode is a substrate holder made of a conductive material, and the substrate is disposed on the substrate holder,
The film forming apparatus according to claim 1, wherein the substrate holder is disposed in the film forming section so that a film forming surface of the substrate is located in a region excluding the irradiation region of the plasma flux.   The film forming apparatus according to claim 7, wherein the substrate is disposed on the substrate holder such that a film forming surface is parallel to a supply direction of the plasma flux.   The film forming apparatus according to claim 7, wherein the substrate is disposed on the substrate holder so that the ionized particles in the form of diffusion plasma are supplied to the film forming surface from a substantially vertical direction.   The film forming apparatus according to claim 9, wherein a film forming surface is inclined with respect to a supply direction of the plasma flux and the substrate is disposed on the substrate holder.   The substrate holder includes a cylindrical main body for attaching the substrate therein and a support for supporting the main body, and an axis is arranged in the plasma flux supply direction in the film forming unit, and the plasma flow The film forming apparatus according to claim 7, wherein the main body is disposed so as to surround an outer periphery of the bundle.   The film forming apparatus according to claim 11, wherein the main body has a polygonal cross section.   The film forming apparatus according to claim 11, wherein the main body has a tapered shape in which a cross-section becomes smaller along a supply direction of the plasma flux.   The film forming apparatus according to claim 11, wherein the substrate holder is configured to be able to adjust a position of the main body portion in the plasma flux supply direction in the film forming portion.   The film forming apparatus according to claim 11, wherein the substrate holder is configured such that the main body portion is rotatable in an outer peripheral direction of the plasma flux.   The film forming apparatus according to claim 11, wherein the substrate is configured to be rotatable within the main body of the substrate holder. Evaporating the film forming material in the evaporation section to generate evaporated particles including at least ionized particles, droplets, and neutral particles;
Supplying ionized particles in the evaporated particles to the film forming unit through a transport unit by applying a bias voltage to a bias supply electrode disposed inside the film forming unit;
Depositing the supplied ionized particles on a surface of a substrate disposed on the bias supply electrode to form a film, and
In the transport step, generate a magnetic field that guides the ionized particles to the film forming unit,
In the film forming step, the film forming method is characterized in that the film forming is performed using ionized particles in a diffusion plasma form other than ionized particles that form a plasma flux under the influence of the magnetic field.

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