JPH08124729A - Film resistor for trimming, its mounting structure, and its trimming method - Google Patents

Film resistor for trimming, its mounting structure, and its trimming method

Info

Publication number
JPH08124729A
JPH08124729A JP6265573A JP26557394A JPH08124729A JP H08124729 A JPH08124729 A JP H08124729A JP 6265573 A JP6265573 A JP 6265573A JP 26557394 A JP26557394 A JP 26557394A JP H08124729 A JPH08124729 A JP H08124729A
Authority
JP
Japan
Prior art keywords
resistor
trimming
film
film resistor
fine adjustment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6265573A
Other languages
Japanese (ja)
Inventor
Fumiaki Tsuji
文明 辻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP6265573A priority Critical patent/JPH08124729A/en
Publication of JPH08124729A publication Critical patent/JPH08124729A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the area occupied by a film resistor for high-accuracy trimming. CONSTITUTION: After forming an insulating film 3 on a resistor 2 for rough adjustment formed on a substrate, a resistor 7 for fine adjustment connected in series through a conductor 4 is provided on the insulating film 3. After the resistor 2 for rough adjustment is trimmed toward a direction changing point (c) from a starting point (b), the resistor 7 for fine adjustment are trimmed toward an ending point (d) after the direction of the resistors 7 is changed by 90 deg..

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はトリミング用膜抵抗体と
その実装構造とそのトリミング方法とに関し、特に混成
集積回路基板上の一部に形成されたトリミング用膜抵抗
体とその実装構造,トリミング方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a trimming film resistor, its mounting structure and its trimming method, and more particularly to a trimming film resistor formed on a part of a hybrid integrated circuit board, its mounting structure and trimming. Regarding the method.

【0002】[0002]

【従来の技術】従来のトリミング用膜抵抗体を記載した
実開昭61−22304号公報を参照すると、図8に示
すように、絶縁性基板の主表面上に形成された第1,第
2の導電体5,6の両端部に、粗調整部抵抗9と微調整
部抵抗10とが連結された一つの突出領域8として形成
されている。
2. Description of the Related Art Referring to Japanese Utility Model Laid-Open No. 61-22304, which describes a conventional trimming film resistor, as shown in FIG. 8, first and second electrodes formed on a main surface of an insulating substrate. On both ends of the electric conductors 5 and 6, the rough adjusting portion resistor 9 and the fine adjusting portion resistor 10 are formed as one projecting region 8.

【0003】ここで、一つの突出領域8の右側は長方形
をなし一様な厚さの抵抗材料が被着され、このため正方
形当りの抵抗値はどこでも一様となっており、微調整部
抵抗10を形成する。この抵抗10の右下の一角から右
方向に同一の抵抗値をなす抵抗が伸び、第2の導電体6
の一端に接続され、この抵抗10の左辺はそのまま粗調
整部抵抗9の右辺に続く。この粗調整部抵抗9は、4個
の開口部11を備え、この開口部11には抵抗材料が被
着されず、下部の絶縁性基板が露出している。この抵抗
9は、全体として長方形をなしその左下の一角から同一
の抵抗値をなす抵抗が伸び、第1の導電体5の端部に接
続され、長方形の右辺はそのまま微調整部抵抗10に続
く。
Here, the right side of one protruding region 8 is rectangular and is coated with a resistance material having a uniform thickness. Therefore, the resistance value per square is uniform everywhere, and the fine adjustment part resistance is Form 10. A resistor having the same resistance value extends from the lower right corner of the resistor 10 to the right, and the second conductor 6
The left side of the resistor 10 continues to the right side of the coarse adjustment unit resistor 9 as it is. The rough adjustment portion resistor 9 has four openings 11, and no resistance material is deposited on the openings 11 to expose the lower insulating substrate. The resistor 9 has a rectangular shape as a whole, and a resistor having the same resistance value extends from a lower left corner thereof and is connected to an end of the first conductor 5, and the right side of the rectangle continues to the fine adjustment unit resistor 10 as it is. .

【0004】以上のように構成して構造された抵抗体
は、実際に必要とする抵抗値より低い値を示し、次に行
うトリミング工程で所望の抵抗値に設定される。
The resistor constructed and constructed as described above exhibits a resistance value lower than an actually required resistance value, and is set to a desired resistance value in the trimming step to be performed next.

【0005】トリミング工程では、レーザビームをこの
抵抗体の表面にスキャンニングしながら照射し、照射さ
れた部分の抵抗体はレーザビームのエネルギにより飛沫
となって除去される。除去された部分は、絶縁性基板が
露出し、この部分は電気的に絶縁される。レーザビーム
のスキャンニングは、手動又はあらかじめプログラムさ
れた数値制御により自動的に行われるが、この際第1,
第2の導電体5,6にはそれぞれプローブ(図示せず)
が当接し、常に抵抗値をモニタしながら進められる。こ
こでは、複数の開口部11を横断するように下方から上
方に向って、レーザビームが当てられ、所望の抵抗値よ
りも若干小さい一定の値になるまで、この抵抗体を切断
していく。
In the trimming process, the surface of the resistor is irradiated with a laser beam while scanning, and the resistor in the irradiated portion is removed as droplets by the energy of the laser beam. The insulating substrate is exposed at the removed portion, and this portion is electrically insulated. Laser beam scanning is performed manually or automatically by preprogrammed numerical control.
A probe (not shown) is provided on each of the second conductors 5 and 6.
Touches each other and can proceed while constantly monitoring the resistance value. Here, a laser beam is applied from below to above so as to traverse the plurality of openings 11, and the resistor is cut until it reaches a constant value slightly smaller than a desired resistance value.

【0006】ここで、レーザビーム軌跡20に示すよう
に、抵抗値が所望の値より若干小さい一定の値になれ
ば、左方から右方に向って、レーザビームをスキャンニ
ングさせる。さらに、レーザビームを上方から下方に向
ってスキャンニングして、最後の微調整を行う。レーザ
ビーム軌跡20で囲まれた領域は、電気的に絶縁される
ことになり、このため除去する必要はなく、所望の抵抗
値を示した位置で、レーザビームのスキャンニングを終
了し、除去された飛沫体を清掃して、トリミング工程を
終了する。
Here, as shown by the laser beam locus 20, when the resistance value becomes a constant value slightly smaller than a desired value, the laser beam is scanned from the left side to the right side. Further, the laser beam is scanned from the upper side to the lower side to perform the final fine adjustment. The region surrounded by the laser beam locus 20 is electrically insulated and therefore does not need to be removed, and the scanning of the laser beam is finished at the position where the desired resistance value is exhibited and the region is removed. The splashed body is cleaned and the trimming process is completed.

【0007】その後、第1,第2の導電体5,6に電気
的に接続される電子部品がこの基板に実装される。
After that, electronic components electrically connected to the first and second conductors 5 and 6 are mounted on this substrate.

【0008】以上のようなトリミング用膜抵抗体が、絶
縁性基板上に必要数形成される。
The necessary number of trimming film resistors as described above are formed on the insulating substrate.

【0009】[0009]

【発明が解決しようとする課題】このような従来のトリ
ミング用膜抵抗体は、粗調整部抵抗9と微調整部抵抗1
0とを平面上に隣接して形成していたため、膜抵抗体が
平面上に占める占有面積が大となり、高密度に実装でき
ないという問題があった。特にこのような多数の膜抵抗
体を、限られた基板上に形成することは不可能であり、
無理に形成しようとすれば膜抵抗体間の間隔が小さくな
ってしまい、このため絶縁性基板を介しての容量性結合
等が無視できなくなり、実装した増幅素子に発振現象が
生じる等安定した所望の特性が得られなくなる等の問題
があった。また、抵抗9のトリミング終了後は、抵抗1
0のトリミング開始点まで移動する必要があり、この間
が時間のロスとなっていた。
In such a conventional trimming film resistor, the rough adjusting portion resistor 9 and the fine adjusting portion resistor 1 are used.
Since 0 and 0 are formed adjacent to each other on the plane, there is a problem that the film resistor occupies a large area on the plane and cannot be mounted at high density. In particular, it is impossible to form such a large number of film resistors on a limited substrate,
If it is forcibly formed, the space between the film resistors will become small, so that capacitive coupling etc. via the insulating substrate cannot be neglected, and a stable desired state such as an oscillation phenomenon occurring in the mounted amplification element will occur. There was a problem that the characteristics of No. 1 could not be obtained. After trimming the resistor 9, the resistor 1
It was necessary to move to the trimming start point of 0, and time was lost during this time.

【0010】以上のような問題点に鑑み、本発明は次の
課題を挙げる。
In view of the above problems, the present invention has the following problems.

【0011】(1)膜抵抗体の占有面積を小さくするこ
と。
(1) To reduce the area occupied by the film resistor.

【0012】(2)限られた絶縁性基板上に、できるだ
け多数の膜抵抗体と多数の電子部品とを備えられるよう
にすること。
(2) To provide as many film resistors and electronic components as possible on a limited insulating substrate.

【0013】(3)膜抵抗体間の電気的結合を、無視で
きる程小さくすること。
(3) The electrical coupling between the film resistors should be negligibly small.

【0014】(4)組み込まれた電子部品が所望の特性
で安定して動作するようにすること。
(4) To make the incorporated electronic parts stably operate with desired characteristics.

【0015】(5)絶縁性基板上のレイアウトの自由度
を向上させること。
(5) To improve the degree of freedom of layout on the insulating substrate.

【0016】(6)高精度に抵抗値を調整できるよう
に、トリミングできること。
(6) Trimming so that the resistance value can be adjusted with high accuracy.

【0017】(7)トリミング作業は、連続的に行える
ようにすること。
(7) Trimming work should be performed continuously.

【0018】[0018]

【課題を解決するための手段】本発明の第1の構成は、
開口部を有する粗調整用抵抗体と、微調整用抵抗体とを
備えた膜抵抗体が、絶縁性基板上に形成されてなるトリ
ミング用膜抵抗体において、前記絶縁性基板上に重積さ
れるように、前記粗調整用抵抗体と前記微調整用抵抗体
とが絶縁膜を介して形成されていることを特徴とし、特
に前記粗調整用抵抗体と前記微調整用抵抗体とが、導電
体を介在させて電気的に接続されている請求項1記載の
トリミング用膜抵抗体。
The first structure of the present invention is as follows.
In a trimming film resistor formed on an insulating substrate, a film resistor including a rough adjusting resistor having an opening and a fine adjusting resistor is stacked on the insulating substrate. As described above, the coarse adjustment resistor and the fine adjustment resistor are formed via an insulating film, in particular, the coarse adjustment resistor and the fine adjustment resistor, The film resistor for trimming according to claim 1, wherein the film resistor is electrically connected via a conductor.

【0019】本発明の第2の構成は、開口部を有する粗
調整用抵抗体と、微調整用抵抗体とを備えた膜抵抗体
が、絶縁性基板上に形成されてなるトリミング用膜抵抗
体において、前記粗調整用抵抗体と前記微調整用抵抗体
とが主表面同士で電気的に直接接触するように、前記絶
縁性基板上に重積していることを特徴とする。
A second structure of the present invention is a trimming film resistor formed by forming, on an insulating substrate, a film resistor including a rough adjusting resistor having an opening and a fine adjusting resistor. In the body, the rough adjustment resistor and the fine adjustment resistor are stacked on the insulating substrate so that the main surfaces thereof are in direct electrical contact with each other.

【0020】本発明の実装構造は、上記第1又は第2の
構成のトリミング用膜抵抗体が、演算増幅器の外部端子
に接続されていることを特徴とする。
The mounting structure of the present invention is characterized in that the trimming film resistor of the first or second configuration is connected to an external terminal of an operational amplifier.

【0021】本発明のトリミング方法は、演算増幅器の
外部端子に接続された請求項1又は請求項3記載のトリ
ミング用膜抵抗体のトリミング作業が、前記演算増幅器
を動作状態となし前記増幅器の特性をモニタしながら行
われることを特徴とする。
In the trimming method of the present invention, the trimming operation of the trimming film resistor according to claim 1 or 3 connected to the external terminal of the operational amplifier does not put the operational amplifier into an operating state and the characteristics of the amplifier. It is performed while monitoring.

【0022】また、本発明のトリミング方法は、上記第
1又は第2の構成のトリミング用膜抵抗体のトリミング
工程において、前記粗調整用抵抗体のトリミング終了
後、トリミング方向を変更して連続的に前記微調整用抵
抗体のトリミングを開始することを特徴とする。
Further, in the trimming method of the present invention, in the trimming step of the trimming film resistor having the first or second structure, after the rough adjustment resistor is trimmed, the trimming direction is changed and the trimming method is continuously performed. The trimming of the fine adjustment resistor is started.

【0023】[0023]

【実施例】本発明の第1の実施例のトリミング用膜抵抗
体の平面図及びそのa−a′線の断面図を示すそれぞれ
図1,図2を参照すると、この実施例は、粗調整用抵抗
体2の上面に絶縁膜3を介して部分的に微調整用抵抗体
7が形成されている。
1 is a plan view of a trimming film resistor according to a first embodiment of the present invention and FIG. 2 is a sectional view taken along the line aa 'thereof. A fine adjustment resistor 7 is partially formed on the upper surface of the resistor 2 with an insulating film 3 interposed therebetween.

【0024】粗調整用抵抗体2は、方形をなしその内部
に5個の長方形の開口部11を有し、その左上角には第
1の導電体5に接続され、右上角には中間導電体4が接
続されている。微調整用抵抗体7は、長方形をなし、そ
の上辺は導電体4が接続され、その下辺は第2の導電体
6が接続されている。
The coarse adjustment resistor 2 has a rectangular shape and has five rectangular openings 11 therein, the upper left corner of which is connected to the first conductor 5, and the upper right corner of which is an intermediate conductor. The body 4 is connected. The fine adjustment resistor 7 has a rectangular shape, the conductor 4 is connected to its upper side, and the second conductor 6 is connected to its lower side.

【0025】絶縁膜3は、図2に示すように、上層の抵
抗体7と下層の抵抗体2との間及び下層の抵抗体2間
に、スクリーン印刷方法で形成されていることが好まし
い。この絶縁膜3は、上,下層の抵抗体7,2の電気的
絶縁性を確保するために、所定厚で上層の抵抗体7より
若干幅広に形成するが、下層の抵抗体2を保護するよう
にこの抵抗体2の表面をすべて被うように形成してもよ
い。導電体4,5,6の端部の側面及び上面と接触する
ように、前記抵抗体7又は2がこれら導電体の後工程で
形成されることが好ましい。
As shown in FIG. 2, the insulating film 3 is preferably formed by a screen printing method between the upper resistor 7 and the lower resistor 2 and between the lower resistor 2. The insulating film 3 is formed to have a predetermined thickness and is slightly wider than the upper resistor 7 in order to secure the electrical insulation of the upper and lower resistors 7 and 2, but protects the lower resistor 2. As described above, the resistor 2 may be formed so as to cover the entire surface thereof. It is preferable that the resistor 7 or 2 is formed in a later step of the conductors so as to come into contact with the side surfaces and the upper surfaces of the end portions of the conductors 4, 5, and 6.

【0026】この実施例の構成要素の好ましい材料は、
次の通りである。
The preferred materials for the components of this embodiment are:
It is as follows.

【0027】薄膜基板の場合;絶縁性基板はセラミッ
ク,導電体4,5,6は薄膜タンタル,抵抗体2,7は
窒化タンタル,絶縁膜3はガラスセラミック。導電体
4,5,6及び抵抗体2,7は、スパッタ方法で形成
し、厚さは約1μm。
In the case of a thin film substrate; the insulating substrate is ceramic, the conductors 4, 5 and 6 are thin film tantalum, the resistors 2 and 7 are tantalum nitride, and the insulating film 3 is glass ceramic. The conductors 4, 5, 6 and the resistors 2, 7 are formed by a sputtering method and have a thickness of about 1 μm.

【0028】厚膜基板の場合;基板はセラミック,導
電体4,5,6は銀パラジュウム,抵抗体2,7は酸化
ルテニウム,絶縁膜3はガラスセラミック。いずれもス
クリーン印刷によって形成する。
In the case of a thick film substrate; the substrate is ceramic, the conductors 4, 5 and 6 are silver palladium, the resistors 2 and 7 are ruthenium oxide, and the insulating film 3 is glass ceramic. Both are formed by screen printing.

【0029】この実施例の膜抵抗体のトリミング工程で
は、レーザビーム軌跡20に示すように、始点aから始
まり、下方に向ってスキャンニングされ、粗調整用抵抗
体2の開口部11間の抵抗体を次々と切断して、所望値
より抵抗値の小さい一定の値になったところの開口部1
1内の方向変更点cで止め、次に右方に向ってスキャン
ニングする。この時に、ビームは微調整用抵抗体7を横
断するように切断して、抵抗値が所望値になったところ
の終点dで止める。
In the trimming process of the film resistor of this embodiment, as shown by the laser beam locus 20, starting from the starting point a, scanning is performed downward, and the resistance between the openings 11 of the coarse adjustment resistor 2 is reduced. Opening 1 where the body is cut one after another and the resistance value becomes smaller than the desired value.
Stop at direction change point c in 1 and then scan to the right. At this time, the beam is cut so as to traverse the fine adjustment resistor 7, and is stopped at the end point d when the resistance value reaches a desired value.

【0030】さらに、微調整が必要な場合は、終点dか
ら上方へ向って、ビームをスキャンニングする場合もあ
る。
Further, when fine adjustment is necessary, the beam may be scanned upward from the end point d.

【0031】この際、下層の抵抗体2が同時に切断され
る心配があるが、すでに始点bと方向変更点cとの間で
切断されているので、抵抗体2の切断による抵抗値の変
動は無視し得る。
At this time, there is a concern that the resistor 2 in the lower layer may be disconnected at the same time, but since the resistor 2 has already been disconnected between the starting point b and the direction change point c, the variation in the resistance value due to the disconnection of the resistor 2 Can be ignored.

【0032】尚、この実施例の構成及びトリミング工程
の説明において、上記従来技術と共通するところは、説
明を省略している。
In the description of the structure and the trimming process of this embodiment, the description common to the above-mentioned prior art is omitted.

【0033】この実施例では、粗調整用抵抗体2の上層
に微調整用抵抗体7を配置していることから、30%程
度占有面積が削減されており、構成によっては最高50
%近くまで縮小化できる。
In this embodiment, since the fine adjustment resistor 7 is arranged on the upper layer of the coarse adjustment resistor 2, the occupied area is reduced by about 30%, and depending on the configuration, it may be up to 50%.
It can be reduced to nearly%.

【0034】ここで、始点bから方向変更点cまでの間
は、粗調整用抵抗体2の抵抗値がステップ状に増加し、
微調整用抵抗体7の抵抗値は不変である。この方向変更
点cから直ちに微調整用抵抗体7のトリミングに入るこ
とが作業能率上好ましいため、微調整用抵抗体7の左辺
と、始点bから方向変更点cまでの直線との間隔eがで
きるだけ小さくなるように、レーザビームを抵抗体7の
左辺に近づけて、トリミングを行うことが好ましい。方
向変更点cから終点dに至るトリミングでは、粗調整用
抵抗体2の抵抗値は不変である。以上のように、粗調整
用抵抗体2のトリミング終了点が、直ちに微調整用抵抗
体7のトリミング開始点となることも特徴の一つであ
る。
From the start point b to the direction change point c, the resistance value of the coarse adjustment resistor 2 increases stepwise,
The resistance value of the fine adjustment resistor 7 does not change. Since it is preferable for the work efficiency to immediately start trimming of the fine adjustment resistor 7 from this direction change point c, the distance e between the left side of the fine adjustment resistor 7 and the straight line from the start point b to the direction change point c is It is preferable to perform trimming by bringing the laser beam close to the left side of the resistor 7 so as to be as small as possible. During trimming from the direction change point c to the end point d, the resistance value of the coarse adjustment resistor 2 remains unchanged. As described above, one of the features is that the trimming end point of the coarse adjustment resistor 2 immediately becomes the trimming start point of the fine adjustment resistor 7.

【0035】微調整用抵抗体7は、始点bと方向変更点
cとを結ぶ直線上を除く粗調整用抵抗体2の表面をすべ
て被うように、絶縁膜3を介して、形成されていてもよ
い。導電体5,6は左右方向に延在しているが、この他
に上下方向等必要な方向に伸ばすことができる。中間導
電体4は、トリミングを効果的に行う上で、導電体5と
同様の側即ち図面の上方に形成することがより好まし
い。即ち、抵抗体7は、開口部11間の抵抗体2を横断
する方向に両極が形成されることが好ましい。
The fine adjustment resistor 7 is formed via the insulating film 3 so as to cover the entire surface of the coarse adjustment resistor 2 except for the straight line connecting the starting point b and the direction changing point c. May be. Although the conductors 5 and 6 extend in the left-right direction, they can be extended in the required direction such as the up-down direction. For effective trimming, the intermediate conductor 4 is more preferably formed on the same side as the conductor 5, that is, on the upper side of the drawing. That is, it is preferable that the resistor 7 has both poles formed in a direction crossing the resistor 2 between the openings 11.

【0036】また、粗調整用抵抗体2は、微調整用抵抗
体7の下層に配置されているが、この逆の上層に配置し
てもよい。
Further, although the rough adjustment resistor 2 is arranged in the lower layer of the fine adjustment resistor 7, it may be arranged in the opposite upper layer.

【0037】以上のように、膜抵抗体の占有面積を縮小
できたため、より多くの膜抵抗体等を配列できるように
なり、また膜抵抗体間の距離を大きくすることができる
ことにもなり、不要な電気的結合が小さく、もって電子
部品の安定動作を確保できる。さらに、絶縁性基板の主
表面上の部品レイアウトの自由度が向上する。粗,微調
整用抵抗体2,7間に、導電体4を介在させているた
め、特に微調整用抵抗体7のトリミング作業の行い易い
位置に、この抵抗体7を適宜レイアウトできるという利
点もある。
As described above, since the area occupied by the film resistors can be reduced, more film resistors can be arranged, and the distance between the film resistors can be increased. Unnecessary electrical coupling is small, so stable operation of electronic components can be ensured. In addition, the degree of freedom of component layout on the main surface of the insulating substrate is improved. Since the conductor 4 is interposed between the coarse and fine adjustment resistors 2 and 7, there is also an advantage that the resistor 7 can be appropriately laid out at a position where trimming work of the fine adjustment resistor 7 can be easily performed. is there.

【0038】尚、この実施例で、上,下層の抵抗体7,
2が逆層となっても、同様の効果が得られる。
In this embodiment, the upper and lower resistors 7,
Even if 2 is the reverse layer, the same effect can be obtained.

【0039】本発明の第2の実施例の膜抵抗体を示す図
3を参照すると、この実施例は、第1の実施例の導電体
4がなく、粗調整用抵抗体2の右辺がそのまま微調整用
抵抗体7の右辺に接続されている点、及び導電体6が下
方に接続されておらず上方から出力されている点以外
が、上記第1の実施例と共通するため、共通する部分の
説明を省略する。
Referring to FIG. 3 showing the film resistor of the second embodiment of the present invention, in this embodiment, the conductor 4 of the first embodiment is not provided, and the right side of the coarse adjustment resistor 2 remains unchanged. It is common to the first embodiment except that it is connected to the right side of the fine adjustment resistor 7 and that the conductor 6 is not connected to the bottom and is output from above. The description of the part is omitted.

【0040】この実施例のトリミング方法は、上記第1
の実施例と共通する。
The trimming method of this embodiment is the same as the first method described above.
It is common with the embodiment of.

【0041】この実施例の効果は、上記第1の実施例の
効果の他に、中間導電体がないため、占有面積がさらに
小さくなり、製造方法もより簡略化される。
In addition to the effect of the first embodiment, the effect of this embodiment is that the occupying area is further reduced because there is no intermediate conductor, and the manufacturing method is further simplified.

【0042】本発明の第3の実施例の膜抵抗体の平面図
を示す図4を参照すると、この実施例は、上記第1,第
2の実施例の絶縁膜3がなく、上,下層の抵抗体7,2
とが主表面同士で直接接触していることである。この実
施例では、下層の抵抗体2の抵抗値は、上層の抵抗体7
の抵抗値の約10分の1程度となるように、膜厚及び材
料が選択される。レーザビーム軌跡20は、左側のほぼ
2分の1ところで上下方向に進み、開口部内の所定位置
で右方に進む。さらに、必要ならば上方に進んで、トリ
ミングを終了する。
Referring to FIG. 4 which is a plan view of the film resistor of the third embodiment of the present invention, this embodiment does not include the insulating film 3 of the first and second embodiments, but has upper and lower layers. Resistors 7, 2
And are in direct contact with each other on the main surfaces. In this embodiment, the resistance value of the resistor 2 in the lower layer is the same as that of the resistor 7 in the upper layer.
The film thickness and the material are selected so as to be about 1/10 of the resistance value of. The laser beam locus 20 travels in the up-and-down direction at approximately one-half on the left side, and travels to the right at a predetermined position in the opening. Further, if necessary, the process proceeds upward to end the trimming.

【0043】この実施例では、上,下層の抵抗体7,2
が重積する部分が粗調整用となり、上層の抵抗体7のみ
のある開口部内では微調整用となる。
In this embodiment, the upper and lower resistors 7, 2 are
Is used for rough adjustment, and for fine adjustment in the opening having only the resistor 7 in the upper layer.

【0044】この実施例では、上,下層の抵抗体7,2
が重積する部分が、粗調整用となり、下層の抵抗体2の
抵抗値の増加が支配的であり、これに対して上層の抵抗
体7の増加は小さい。
In this embodiment, the upper and lower resistors 7, 2
Is used for rough adjustment, and the increase in the resistance value of the resistor 2 in the lower layer is dominant, whereas the increase in the resistor 7 in the upper layer is small.

【0045】上層の抵抗体7のみのトリミング中は、抵
抗体2の変化は少なく、抵抗体7の抵抗値の増加が支配
的となる。この実施例も、トリミング方向を90°変え
ることにより、直ちに(連続的に)微調整に入れるとい
うメリットがある。
During the trimming of only the upper resistor 7, the change of the resistor 2 is small, and the increase of the resistance value of the resistor 7 becomes dominant. This embodiment also has an advantage that fine adjustment can be immediately (continuously) performed by changing the trimming direction by 90 °.

【0046】この実施例の効果は、上記実施例よりさら
に占有面積が小さくなり、また製造方法も簡便となる。
The effect of this embodiment is that the occupied area is smaller than that of the above embodiment and the manufacturing method is simple.

【0047】尚、この実施例で、上,下層の抵抗体7,
2が逆層となっても、同様の効果が得られる。以上の第
3の実施例で、上記第1の実施例と共通したところは、
説明を省略している。
In this embodiment, the upper and lower resistors 7,
Even if 2 is the reverse layer, the same effect can be obtained. In the above third embodiment, what is common to the first embodiment is that
The description is omitted.

【0048】上記第2の実施例において、上層の抵抗体
7は、下層の抵抗体2の略同一の寸法で形成してもよ
く、第3の実施例において、抵抗体7を抵抗体2上に部
分的に形成されていてもよい。
In the second embodiment, the upper layer resistor 7 may be formed to have substantially the same size as the lower layer resistor 2. In the third embodiment, the resistor 7 may be formed on the resistor 2. It may be formed partially.

【0049】尚、開口部11の数,抵抗体2,7の縦横
の寸法比,抵抗体2,7の膜厚,導電体5,6の引き出
し方向等は、上記各実施例に限定されるものではなく、
必要に応じて適宜変更しうるものである。
The number of openings 11, the vertical and horizontal dimensional ratios of the resistors 2 and 7, the film thickness of the resistors 2 and 7, the direction in which the conductors 5 and 6 are drawn out, etc. are limited to those in each of the above embodiments. Not something
It can be changed as needed.

【0050】上述した第1,第2,第3の実施例のうち
いずれかの膜抵抗体が接続された電子部品を示す図5を
参照すると、演算増幅器(オペレーション・アンプ)の
一例として直流増幅器(DCアンプ)21が示されてお
り、この出力端子26と正相入力端子24との間に抵抗
29が接続され、さらに入力端子27との間に抵抗28
が接続され、逆相入力端子25は接地されている。抵抗
28と抵抗29との抵抗値比で増幅度が決定されるた
め、上記膜抵抗体の高精度にトリミングされたものが使
用されることが好ましい。この場合、上記膜抵抗体から
なる抵抗28,29のうち一方の抵抗を、トリミングし
た膜抵抗体を用い、他方の抵抗をトリミングしない膜抵
抗体を用いてもよい。この膜抵抗体のトリミングは、D
Cアンプ21を接続する前が望ましいが、DCアンプ2
1内の特性上のバラツキが増幅度に影響する場合は、こ
のDCアンプ21を実装して電源を投入し、動作状態に
設定した後に、入力端子27,出力端子26の電圧をモ
ニタしながら、抵抗体28又は29をトリミングして、
所望の増幅度に微調整することが好ましい。このDCア
ンプ21は、発振を防止する目的で、抵抗28,29間
の離間させておくことが好ましく、その意味において
も、上記膜抵抗体の採用が望ましい。
Referring to FIG. 5 showing an electronic component to which any one of the film resistors of the first, second and third embodiments described above is connected, a DC amplifier as an example of an operational amplifier (operation amplifier). A (DC amplifier) 21 is shown, a resistor 29 is connected between the output terminal 26 and the positive-phase input terminal 24, and a resistor 28 is connected between the input terminal 27 and the resistor 29.
Are connected, and the negative-phase input terminal 25 is grounded. Since the amplification factor is determined by the resistance value ratio of the resistor 28 and the resistor 29, it is preferable to use the above-described highly accurate trimmed film resistor. In this case, one of the resistors 28 and 29 made of the above film resistor may be a trimmed film resistor, and the other resistor may not be trimmed. The trimming of this membrane resistor is D
Before connecting C amplifier 21, it is desirable, but DC amplifier 2
When the variation in the characteristics within 1 affects the amplification degree, the DC amplifier 21 is mounted, the power is turned on, the operating state is set, and then the voltages of the input terminal 27 and the output terminal 26 are monitored. Trimming resistor 28 or 29,
It is preferable to perform fine adjustment to a desired amplification degree. The DC amplifier 21 is preferably separated between the resistors 28 and 29 for the purpose of preventing oscillation, and in that sense, the film resistor is preferably used.

【0051】また、上記実施例の膜抵抗体のいずれかが
接続された他の電子部品を示す図6を参照すると、この
応用例は加算器22に適用した場合で、正相入力端子3
0と出力端子32との間に抵抗33,第1,第2,第3
の入力端子37,38,39と正相入力端子30との間
に抵抗34,35,36がそれぞれ接続されている。逆
相入力端子31は接地される。第1,第2,第3の入力
端子37,38,39に印加された各電圧は加算された
反転値で、出力端子32に出力される。
Further, referring to FIG. 6 showing another electronic component to which any one of the film resistors of the above-mentioned embodiment is connected, this application example is applied to the adder 22, and the positive phase input terminal 3 is applied.
The resistor 33, the first, the second, and the third between 0 and the output terminal 32.
Resistors 34, 35 and 36 are connected between the input terminals 37, 38 and 39 and the positive phase input terminal 30, respectively. The negative phase input terminal 31 is grounded. The respective voltages applied to the first, second, and third input terminals 37, 38, 39 are output as the inverted value of the added output terminal 32.

【0052】ここで、抵抗33の抵抗値と一致するよう
に、抵抗34,35,36が上記膜抵抗体で構成され、
トリミング調整される。この加算器22では、抵抗33
が抵抗34,35,36の近くに配置されると発振を生
じる恐れがあるため、抵抗の占有面積の小さい上記実施
例を用い、少なくとも減少した面積相当分程度は互いに
離間させて配置しておくことが望しい。
Here, the resistors 34, 35 and 36 are formed of the above film resistor so as to match the resistance value of the resistor 33.
Trimming is adjusted. In this adder 22, the resistance 33
May oscillate if placed near the resistors 34, 35, 36, the above-mentioned embodiment in which the area occupied by the resistors is small is used, and at least the reduced area is placed apart from each other. I hope that.

【0053】加算器22の特性が、加算性能に及ばす影
響を無視できない場合には、この加算器22を接続して
動作状態となした上で、レーザビームで抵抗34,3
5,36をトリミングする。この際、入力端子37,3
8,39の各入力電圧と出力端子32の出力電圧とをモ
ニタしながら、トリミングを進めていくことがより望ま
しい。
When the effect of the characteristics of the adder 22 on the addition performance cannot be ignored, the adder 22 is connected to bring it into an operating state, and the resistors 34 and 3 are connected by the laser beam.
Trim 5,36. At this time, the input terminals 37, 3
It is more desirable to proceed with the trimming while monitoring the input voltages of 8 and 39 and the output voltage of the output terminal 32.

【0054】さらに、上記実施例の膜抵抗体のいずれか
が接続された差動増幅器(差動アンプ)の回路を示す図
7を参照すると、この差動アンプ23の出力端子42と
正相入力端子40との間に抵抗43,正相入力端子40
と第1の入力端子47との間に抵抗45,逆相入力端子
と接地,第2の入力端子48との間に抵抗44,抵抗4
6がそれぞれ接続されている。ここで、すべての抵抗3
3,34,35,36の抵抗値を互いに等しくすると、
入力(E1−E2)の差動出力が原理的に得られるた
め、これら抵抗の一つを基準として、他の三つの抵抗を
トリミング調整する。トリミング時の条件設定は、上記
図5,図6の場合と共通する。
Further, referring to FIG. 7 showing a circuit of a differential amplifier (differential amplifier) to which any one of the film resistors of the above-mentioned embodiment is connected, an output terminal 42 of this differential amplifier 23 and a positive phase input. Resistor 43 between terminal 40 and positive phase input terminal 40
And a first input terminal 47 with a resistor 45, a negative-phase input terminal with a ground, and a second input terminal 48 with a resistor 44, a resistor 4
6 are connected to each other. Where all resistors 3
If the resistance values of 3, 34, 35 and 36 are made equal to each other,
Since a differential output of the input (E1-E2) is obtained in principle, one of these resistors is used as a reference and the other three resistors are trimmed and adjusted. The condition setting at the time of trimming is the same as that in the case of FIGS.

【0055】図5,図6,図7で示した各種の演算増幅
器は、直流から数十KHzで動作することがより好まし
く、この他の回路構成で動作させることも可能である。
The various operational amplifiers shown in FIGS. 5, 6 and 7 are more preferably operated from DC to several tens of KHz, and can be operated with other circuit configurations.

【0056】[0056]

【発明の効果】以上説明したように、本発明によれば、
粗,微調整用抵抗体を重積構造となし、膜抵抗体の占有
面積を削減したため、上記各課題が達成され、特に演算
増幅器の外付け抵抗として利用し易く、設計上の自由度
や応用範囲数等が拡大し、トリミングも短距離で連続的
に行える等の効果が得られる。
As described above, according to the present invention,
Since the coarse and fine adjustment resistors have a stacked structure and the area occupied by the film resistor is reduced, the above-mentioned respective problems are achieved, and in particular, it is easy to use as an external resistance of an operational amplifier, and the degree of freedom in design and application are improved. The number of ranges and the like can be expanded, and trimming can be continuously performed in a short distance.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例のトリミング用膜抵抗体
を示す平面図である。
FIG. 1 is a plan view showing a trimming film resistor according to a first embodiment of the present invention.

【図2】図1のa−a′線に沿った断面図である。FIG. 2 is a cross-sectional view taken along line aa ′ of FIG.

【図3】本発明の第2の実施例を示す平面図である。FIG. 3 is a plan view showing a second embodiment of the present invention.

【図4】本発明の第3の実施例を示す平面図である。FIG. 4 is a plan view showing a third embodiment of the present invention.

【図5】本発明の実施例を直流増幅器に使用した例を示
す回路図である。
FIG. 5 is a circuit diagram showing an example in which an embodiment of the present invention is used in a DC amplifier.

【図6】本発明の実施例を加算器に使用した例を示す回
路図である。
FIG. 6 is a circuit diagram showing an example in which an embodiment of the present invention is used in an adder.

【図7】本発明の実施例を差動増幅器に使用した例を示
す回路図である。
FIG. 7 is a circuit diagram showing an example in which an embodiment of the present invention is used in a differential amplifier.

【図8】従来のトリミング用膜抵抗体を示す平面図であ
る。
FIG. 8 is a plan view showing a conventional trimming film resistor.

【符号の説明】[Explanation of symbols]

1 絶縁性基板 2 粗調整用抵抗体 3 絶縁膜 4,5,6 導電体 7 微調整用抵抗体 8 一つの突出領域 9 粗調整部抵抗 10 微調整部抵抗 11 開口部 20 レーザビーム軌跡 28,29,33,34,35,36,43乃至46
抵抗 21 直流増幅器 22 加算器 23 差動増幅器 24,30,40 正相入力端子 25,31,41 逆相入力端子 26,32,42 出力端子 27,37,38,39,47,48,49 入力端
子 b 始点 c 方向変更点 d 終点 e 間隔
1 Insulating Substrate 2 Rough Adjusting Resistor 3 Insulating Film 4, 5, 6 Conductor 7 Fine Adjusting Resistor 8 One Protruding Area 9 Rough Adjusting Part Resistor 10 Fine Adjusting Part Resistor 11 Opening 20 Laser Beam Trajectory 28, 29, 33, 34, 35, 36, 43 to 46
Resistance 21 DC amplifier 22 Adder 23 Differential amplifier 24, 30, 40 Positive phase input terminal 25, 31, 41 Reversed phase input terminal 26, 32, 42 Output terminal 27, 37, 38, 39, 47, 48, 49 Input Terminal b Start point c Direction change point d End point e Interval

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成6年12月14日[Submission date] December 14, 1994

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0024[Name of item to be corrected] 0024

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0024】粗調整用抵抗体2は、方形をなしその内部
に開口部11を有し、その左上角には第1の導電体5に
接続され、右上角には中間導電体4が接続されている。
微調整用抵抗体7は、長方形をなし、その上辺には導電
体4が接続され、その下方は第2の導電体6が接続され
ている。
The rough adjustment resistor 2 has a rectangular shape and has an opening 11 therein, and is connected to the first conductor 5 at the upper left corner thereof and is connected to the intermediate conductor 4 at the upper right corner thereof. ing.
The fine adjustment resistor 7 has a rectangular shape, the conductor 4 is connected to the upper side thereof, and the second conductor 6 is connected to the lower side thereof.

【手続補正2】[Procedure Amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0027[Name of item to be corrected] 0027

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【0027】薄膜基板の場合;絶縁性基板はセラミッ
ク,導電体4,5,6は金,抵抗体2,7は窒化タンタ
ル,絶縁膜3はポリイミド。導電体4,5,6及び抵抗
体2,7は、スパッタ方法で形成し、厚さは約1μm。
In the case of a thin film substrate; the insulating substrate is ceramic, the conductors 4, 5 and 6 are gold, the resistors 2 and 7 are tantalum nitride, and the insulating film 3 is polyimide. The conductors 4, 5, 6 and the resistors 2, 7 are formed by a sputtering method and have a thickness of about 1 μm.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 27/04 21/822 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location H01L 27/04 21/822

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 開口部を有する粗調整用抵抗体と、微調
整用抵抗体とを備えた膜抵抗体が、絶縁性基板上に形成
されてなるトリミング用膜抵抗体において、前記絶縁性
基板上に重積されるように、前記粗調整用抵抗体と前記
微調整用抵抗体とが絶縁膜を介して形成されていること
を特徴とするトリミング用膜抵抗体。
1. A trimming film resistor in which a film resistor including a coarse adjustment resistor having an opening and a fine adjustment resistor is formed on an insulating substrate, wherein the insulating substrate A trimming film resistor, wherein the coarse adjustment resistor and the fine adjustment resistor are formed so as to be stacked on each other with an insulating film interposed therebetween.
【請求項2】 前記粗調整用抵抗体と前記微調整用抵抗
体とが、導電体を介在させて電気的に接続されている請
求項1記載のトリミング用膜抵抗体。
2. The trimming film resistor according to claim 1, wherein the coarse adjustment resistor and the fine adjustment resistor are electrically connected via a conductor.
【請求項3】 開口部を有する粗調整用抵抗体と、微調
整用抵抗体とを備えた膜抵抗体が、絶縁性基板上に形成
されてなるトリミング用膜抵抗体において、前記粗調整
用抵抗体と前記微調整用抵抗体とが主表面同士で電気的
に直接接触するように、前記絶縁性基板上に重積してい
ることを特徴とするトリミング用膜抵抗体。
3. A film resistor for trimming, comprising a film resistor provided with a resistor for coarse adjustment having an opening and a resistor for fine adjustment formed on an insulating substrate. A trimming film resistor, wherein the resistor and the fine adjustment resistor are stacked on the insulating substrate so that the main surfaces thereof are in direct electrical contact with each other.
【請求項4】 請求項1又は請求項3記載のトリミング
用膜抵抗体が、演算増幅器の外部端子に接続されている
ことを特徴とするトリミング用膜抵抗体の実装構造。
4. A mounting structure for a trimming film resistor, wherein the trimming film resistor according to claim 1 or 3 is connected to an external terminal of an operational amplifier.
【請求項5】 演算増幅器の外部端子に接続された請求
項1又は請求項3記載のトリミング用膜抵抗体のトリミ
ング作業が、前記演算増幅器を動作状態となし前記増幅
器の特性をモニタしながら行われることを特徴とするト
リミング用膜抵抗体のトリミング方法。
5. The trimming work of the trimming film resistor according to claim 1, which is connected to an external terminal of the operational amplifier, is performed while the operational amplifier is in an operating state and the characteristics of the amplifier are monitored. A method for trimming a film resistor for trimming, which comprises:
【請求項6】 請求項1又は請求項3記載のトリミング
用膜抵抗体のトリミング工程において、前記粗調整用抵
抗体のトリミング終了後、トリミング方向を変更して連
続的に前記微調整用抵抗体のトリミングを開始すること
を特徴とするトリミング用膜抵抗体のトリミング方法。
6. The trimming film resistor trimming step according to claim 1, wherein after the rough trimming resistor is trimmed, the trimming direction is changed to continuously change the fine trimming resistor. A method for trimming a film resistor for trimming, characterized in that the trimming is started.
JP6265573A 1994-10-28 1994-10-28 Film resistor for trimming, its mounting structure, and its trimming method Pending JPH08124729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6265573A JPH08124729A (en) 1994-10-28 1994-10-28 Film resistor for trimming, its mounting structure, and its trimming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6265573A JPH08124729A (en) 1994-10-28 1994-10-28 Film resistor for trimming, its mounting structure, and its trimming method

Publications (1)

Publication Number Publication Date
JPH08124729A true JPH08124729A (en) 1996-05-17

Family

ID=17418997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6265573A Pending JPH08124729A (en) 1994-10-28 1994-10-28 Film resistor for trimming, its mounting structure, and its trimming method

Country Status (1)

Country Link
JP (1) JPH08124729A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096174A (en) * 2005-09-30 2007-04-12 Ricoh Co Ltd Semiconductor device
US7358592B2 (en) 2004-03-02 2008-04-15 Ricoh Company, Ltd. Semiconductor device
US7425753B2 (en) 2004-09-30 2008-09-16 Ricoh Company, Ltd. Semiconductor device
JP2016131167A (en) * 2015-01-13 2016-07-21 三菱マテリアル株式会社 Method for adjusting resistance value of electronic device
CN112687558A (en) * 2020-12-05 2021-04-20 西安翔腾微电子科技有限公司 Method for improving laser trimming polysilicon resistance precision

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03209802A (en) * 1990-01-12 1991-09-12 Aisin Seiki Co Ltd Formation of resistor
JPH03255601A (en) * 1990-03-05 1991-11-14 Nec Corp Laser trimming device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03209802A (en) * 1990-01-12 1991-09-12 Aisin Seiki Co Ltd Formation of resistor
JPH03255601A (en) * 1990-03-05 1991-11-14 Nec Corp Laser trimming device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7358592B2 (en) 2004-03-02 2008-04-15 Ricoh Company, Ltd. Semiconductor device
US7425753B2 (en) 2004-09-30 2008-09-16 Ricoh Company, Ltd. Semiconductor device
JP2007096174A (en) * 2005-09-30 2007-04-12 Ricoh Co Ltd Semiconductor device
US7292133B2 (en) 2005-09-30 2007-11-06 Ricoh Company, Ltd. Resistance circuit, and voltage detection and constant voltage generating circuits incorporating such resistance circuit
JP2016131167A (en) * 2015-01-13 2016-07-21 三菱マテリアル株式会社 Method for adjusting resistance value of electronic device
CN112687558A (en) * 2020-12-05 2021-04-20 西安翔腾微电子科技有限公司 Method for improving laser trimming polysilicon resistance precision

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