JPH0783141B2 - Glass-sealed light emitting semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a glass-sealed light emitting semiconductor device, and is used for obtaining a constant voltage in a circuit of a special solar calculator.

(Prior Art) A conventional light emitting semiconductor device is, for example, gallium phosphide (GaP).
A light emitting diode made of a compound semiconductor such as the above is used as a light emitting element body, which is glass-sealed. FIG. 3 shows an example of a light emitting diode used in a conventional glass-sealed light emitting semiconductor device. In this figure, 101 is an N-type GaP layer, and a P-type GaP layer 102 is grown and formed on this N-type GaP layer 101 to form a PN junction between them. An AuGe alloy layer 103 and an AuBe / Au gold alloy layer 105 are deposited on the bottom surface of the N-type GaP layer 101 and the surface of the P-type GaP layer 102, respectively. The AuBe / Au gold alloy layer 105 is subjected to sintering (high-temperature heat treatment) so that sufficient ohmic characteristics can be obtained after deposition. After the sintering, the P-type GaP layer 102 and Au are deposited.
An alloy layer 104 is formed between the Be / Au gold alloy layer 105. Next, a silver layer 106 is deposited on the AuGe gold alloy layer 103 on the N-type GaP layer 101 side. Then, A on the surface of the P-type GaP layer 102
The uBe / Au gold alloy layer 105 becomes the anode electrode 108 of this light emitting diode, and the laminated layer of the AuGe gold alloy layer 103 and the silver layer 106 formed on the bottom surface of the N-type GaP layer 101 is the cathode of this light emitting diode. It becomes the electrode 107. FIG. 4 is a cross-sectional view showing a conventional glass-sealed light emitting semiconductor device in which the light emitting diode element 100 is sealed with a glass tube 111. The cathode electrode 107 and the anode electrode 108 of the light emitting diode element are each provided with a dumet wire ( Wires 112, 113 formed by coating an iron / nickel alloy with copper are connected, and these Dumet wires are sealed with a glass tube 111 together with the light emitting diode element 100. Lead wires 114 and 115 are connected to the exposed end portions of the dumet wires 112 and 113, respectively.

(Problems to be Solved by the Invention) The above conventional structure of the light emitting diode element has the following problems in its manufacturing process. In general, light emitting diode devices are divided into individual wafers by blade dicing, so PN junctions are exposed on the side surfaces. (I) Surface treatment (including etching) of these dicing surfaces is indispensable. Is usually an acid-based treatment means. Furthermore, (ii) chemical surface protection is applied to prevent the invasion of harmful impurities. This involves treating a GaP diode in hot hydrogen peroxide to form a layer of gallium oxide on the surface. This oxide acts as a getter of impurities and a barrier against contamination. However, while the gold alloy is relatively stable against high temperature acid treatment and hydrogen peroxide treatment, the alloy layer 104 between the P-type GaP layer and the anode electrode is relatively stable.
Is vulnerable to the above-mentioned treatment, so that the anode electrode may be attacked, and the anode electrode may float, peel off, or turn over. Therefore, when performing the hydrogen peroxide treatment, a complicated process for protecting the alloy layer 104, that is, the alloy layer, AuBe
A step of depositing a protective film such as a photoresist film and an OCD film (silica agent, trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) on the / Au layer,
Since a step of performing patterning, a step of removing this after the etching process is necessary, etc., it has been a major impediment factor in improving productivity.

The present invention provides a structure of a light emitting diode device that solves the above conventional problems.

[Structure of Invention]

(Means for Solving Problems) A glass-sealed light-emitting semiconductor device according to the present invention is a glass-sealed envelope integrally with a Dumet wire for connecting a semiconductor light-emitting element to each of its anode electrode and cathode electrode. In a glass-sealed light-emitting semiconductor device which is sealed with, a semiconductor light-emitting element forms a PN junction, a P-type semiconductor layer and an N-type semiconductor layer, and a gold alloy layer deposited on the surface of the P-type semiconductor layer. An anode electrode made of a metal covering the entire exposed surface of the gold alloy layer, and a cathode made of a gold alloy layer deposited on the surface of the N-type semiconductor layer and a silver layer deposited on the exposed main surface of the gold alloy layer. It is characterized by comprising electrodes.

(Operation) In the glass-sealed light emitting semiconductor device of the present invention, the gold alloy layer is formed on the exposed main surface of the gold alloy layer having the light emitting diode element P layer side (anode) electrode formed on the P layer and the side surface thereof. It is coated with a gold layer having a larger area, and since this gold layer is not sintered after deposition, it is not alloyed and protects the electrode against treatment with acid or hydrogen peroxide. Thereby, the forward voltage deterioration is improved, the manufacturing process of the light emitting device is simplified, and the productivity can be improved.

(Embodiment) An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. In the description, parts that are the same as those in the related art are denoted by the same reference numerals as those in the related art and will not be described.

FIG. 1 is a sectional view showing a light emitting diode element of a glass-sealed light emitting semiconductor device according to one embodiment. The light emitting diode device 10 shown in FIG. 1 is a P-type GaP layer in a N-type GaP layer 101 and a P-type GaP layer 102 that are configured to emit red light and form a PN junction.
A gold alloy layer 105 (eg, Au-Be, Au-Zn alloy) on the layer 102
Is relatively thin, for example, 0.6 μm thick. Further, the entire exposed surface of the gold alloy layer 105, that is, the surface and the side surface of the gold alloy layer 105, are covered with the gold layer 11 thicker in a larger area than the gold alloy layer to form the anode electrode 12. On the other hand, a gold alloy layer 103 (for example, Au-Ge, Au-Si) is formed on the N-type GaP layer 101.
System alloy) is relatively thin, for example, formed to a thickness of 0.4 μm. A silver layer 106 is formed on the gold alloy layer 103 to form a cathode electrode 107. And glass tube 1
For example, 640 to 660 along with Dumet wires 112 and 113 in 11
Heat sealed at ℃ and integrated.

Since the anode electrode 12 of the light emitting diode element having the above structure is completely covered with the gold layer 11, it is necessary to protect the alloy layer during high temperature acid treatment, hydrogen peroxide treatment, etc. performed in the manufacturing process of the element. Of the complicated steps, that is, deposition of a protective film such as a photoresist film and an OCD film, patterning,
The removal after the etching process is unnecessary, and the productivity is remarkably improved.

The light emitting diode element 10 is glass-sealed to form a glass-sealed light emitting semiconductor device shown in FIG. That is, the light emitting diode element 10 operates reliably by the current supplied via the Dumet wire, and exhibits a predetermined light emitting characteristic. By the way, the forward voltage (VF) of this light emitting semiconductor device
The characteristics were tested and the characteristic values comparable to each other were confirmed. In addition, it should be noted that in the hydrogen peroxide treatment when manufacturing a light-emitting diode element, there is no problem of the anode electrode floating, peeling, or turning over, so the above treatment can be strengthened and low current (10
About 5% improvement in forward voltage (VF) degradation in the μA) region was achieved after 168 hours of energization.

[Effects of the Invention] As described in detail above, according to the present invention, by forming an electrode in which an AuBe / Au alloy layer and an alloy layer are entirely covered with a gold layer, deterioration of the forward voltage of a light emitting diode element is achieved. The manufacturing process of this device was simplified and the remarkable effects such as improvement in productivity and yield were obtained.

[Brief description of drawings]

FIG. 1 is a sectional view of a light emitting diode element of one embodiment according to the present invention, FIG. 2 is a sectional view of a glass-sealed light emitting semiconductor device of the present invention, and FIG. 3 is a sectional view of a conventional light emitting diode element, FIG. 4 is a sectional view of a glass-sealed light emitting semiconductor device. 10 …… Light emitting diode element 11 …… Gold layer 12 …… Anode electrode 101 …… N-type GaP layer 102 …… P-type GaP layer 103 …… AuGe gold alloy layer 105 …… Gold alloy layer (Au-Be, Au) -Zn system) 106 …… Silver layer 107 …… Cathode electrode

Claims (1)

[Claims] 1. A glass-sealed light-emitting semiconductor device in which a semiconductor light-emitting element is sealed in a glass-sealed envelope together with a Dumet wire connecting to an anode electrode and a cathode electrode of the semiconductor light-emitting element. A P-type semiconductor layer and an N-type semiconductor layer forming a PN junction, a gold alloy layer deposited on the surface of the P-type semiconductor layer, and an anode electrode made of a metal covering the entire exposed surface of the gold alloy layer, and A glass-sealed light emitting semiconductor device comprising a cathode electrode composed of a gold alloy layer deposited on the surface of an N-type semiconductor layer and a silver layer deposited on the exposed main surface of the gold alloy layer. .