JPH0777241B2 - Method for manufacturing package with window for semiconductor - Google Patents

Description

TECHNICAL FIELD The present invention relates to a method for manufacturing a window package for semiconductors.

[Prior Art] Conventionally, a light emitting element such as a semiconductor laser or a light receiving element such as a heat sensitive sensor is mounted in a so-called package with a window for a semiconductor provided with a window that transmits light ranging from visible light to infrared light. Such a package with a window for a semiconductor is manufactured by mounting a window member 4 on a peripheral portion of a window 2 of a metal cap 1 which is a metal component through a low melting point glass 3 as shown in FIGS. 2 and 3. The window 2 is sealed, and then the metal cap 1 and the like are plated to manufacture a predetermined semiconductor device with a window.

[Problems to be Solved by the Invention] However, in the case of obtaining a package with a window for a semiconductor by the method described above, it is necessary to use a chemical that does not immerse the low-melting point glass 3 in order to perform chemical treatment in the final step. Therefore, the types of chemicals were limited, and it was not possible to select the most suitable one for the oxide film removal method. As a result, there is a problem in that the window member 4 is scratched or soiled.

The present invention has been made in view of the above points, and a method for manufacturing a package with a window for a semiconductor capable of preventing the window material from being scratched or soiled by eliminating the need for plating in the final step. Is provided.

[Means for Solving the Problems] The present invention relates to a step of forming a plating layer on a metal component having a window, and a low melting point glass in an oxidizing atmosphere on the plated metal component so as to seal the window. A window for a semiconductor, comprising: a step of attaching a window material through a metal; and a step of removing an oxide film adhered to a metal component when the window material is attached in the oxidizing atmosphere in a reducing atmosphere. It is a method of manufacturing an attached package.

Here, as the low melting point glass, lead oxide type glass or boron oxide-zinc oxide type glass can be used.

As the window material, borosilicate glass or silicon material can be used.

Also, as metal parts, Fe-Ni-Co alloys (Kovar)
Can be used.

[Operation] According to the method for manufacturing a semiconductor package with a window of the present invention, the metal component is plated before the window material is mounted.
Therefore, the oxide film attached to the metal component after the window is sealed can be removed in the reducing atmosphere. As a result, it is possible to prevent the window material from being scratched or soiled.

[Embodiment] An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory diagram showing the flow of steps according to the method of the present invention. First, Ni electrolytic plating was applied to a metal cap, which is a metal component made of an Fe-Ni-Co alloy. Next, a window material was attached in the vicinity of the window of the metal cap, which had been subjected to the above-mentioned plating treatment without pre-oxidation, in an oxidizing atmosphere through a low melting point glass to seal the window. Lead oxide glass or boron oxide-zinc oxide glass was used as the low melting point glass, and borosilicate glass or silicon material was used as the window material. In order to remove the thin oxide film formed after the window was sealed, the metal cap was subjected to reduction treatment at a temperature of about 430 ° C., which is the softening point of the low melting point glass, to obtain a package with a window for semiconductors. The reducing gas used was nitrogen gas: hydrogen gas = 8: 1. Further, if the temperature of the reducing atmosphere is further increased, there is a problem that the composition of the low melting point glass is deposited.

Thus, the metal cap was plated before the window was sealed to remove the oxide film after sealing in a reducing atmosphere. As a result, it was possible to prevent the window material from being scratched or soiled and to easily obtain a high-quality package with a window for a semiconductor.

[Effects of the Invention] As described above, according to the method for manufacturing a package with a window for a semiconductor of the present invention, chemical treatment in the final step is not necessary, and the window material is prevented from being scratched or soiled. Is something that can be done.

[Brief description of drawings]

FIG. 1 is an explanatory view showing the flow of steps of the method of the present invention, and FIG.
FIG. 3 is an explanatory view showing an assembled state by a conventional method, and FIG. 3 is an explanatory view showing a flow of steps of the conventional method. 1 ... metal cap, 2 ... window, 3 ... low melting glass,
4 ... Window material.

Claims (1)

[Claims] 1. A step of forming a plating layer on a metal component having a window, and a step of mounting a window material on the plated metal component so as to seal the window in an oxidizing atmosphere through a low melting point glass. And a step of removing, in a reducing atmosphere, an oxide film attached to a metal component when the window material is mounted in the oxidizing atmosphere, a method for manufacturing a package with a window for a semiconductor.