JPH0770673A - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JPH0770673A
JPH0770673A JP6095481A JP9548194A JPH0770673A JP H0770673 A JPH0770673 A JP H0770673A JP 6095481 A JP6095481 A JP 6095481A JP 9548194 A JP9548194 A JP 9548194A JP H0770673 A JPH0770673 A JP H0770673A
Authority
JP
Japan
Prior art keywords
semiconductor device
bonding wire
wire
ball
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6095481A
Other languages
Japanese (ja)
Other versions
JP2501303B2 (en
Inventor
Shigemi Yamane
茂美 山根
Koichiro Atsumi
幸一郎 渥美
Tetsuo Ando
鉄男 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6095481A priority Critical patent/JP2501303B2/en
Publication of JPH0770673A publication Critical patent/JPH0770673A/en
Application granted granted Critical
Publication of JP2501303B2 publication Critical patent/JP2501303B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a high reliability semiconductor device by using a Cu-based bonding wire having a specified compsn. when a semiconductor chip is electrically connected to a lead finger. CONSTITUTION:The compsn. of a bonding wire is composed of 0.001-2wt.% one or more kinds of elements selected from among Mg, Ca, Ti, Hf, V, Nb, Ta, Ni, Pd, Pt, Au, Cd, B, Al, In, Si, Ge, Pb, P, Sb, Bi, Se and Te and the balance essentially Cu. When Mg is contained, the amt. of Mg is regulated to <0.03wt.%. When one or more among B, Al, Si and Sb are contained, the amt. of each of the elements is regulated to >=0.03wt.%. When Pb is contained, the amt. of Pb is regulated to <0.01wt.%.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、ボンディングワイヤー
を用いた半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device using a bonding wire.

【０００２】[0002]

【従来の技術】一般に、ＩＣやＬＳＩなどの半導体装置
は、例えば図１に示すように、樹脂モールド４の内部に
おいて、半導体チップ１および半導体装置の外部へ電気
的結線を行うためのリードフィンガ２が設けられてお
り、これらを線径１０〜１００μｍ程度のボンディング
ワイヤー３で結ぶ構造となっている。2. Description of the Related Art Generally, a semiconductor device such as an IC or an LSI has a lead finger 2 for electrically connecting the semiconductor chip 1 and the outside of the semiconductor device inside a resin mold 4 as shown in FIG. Are provided, and these are connected by a bonding wire 3 having a wire diameter of about 10 to 100 μm.

【０００３】このボンディングワイヤー３の接続方法の
一例としては、まずボンディングワイヤーの先端をボー
ル状に加熱溶融させ、次にこのボール状の先端を半導体
チップ１に圧接し、さらに弧を描くようにボンディング
ワイヤー３を延ばし、３００〜３５０℃に加熱されたリ
ードフィンガ２にボンディングワイヤー３の一部を再度
圧接し、切断することにより、半導体チップ１とリード
フィンガ２とを結線するものである。As an example of the method of connecting the bonding wire 3, first, the tip of the bonding wire is heated and melted into a ball shape, and then the ball-shaped tip is pressed against the semiconductor chip 1 to further form an arc. The wire 3 is extended, and a part of the bonding wire 3 is pressed against the lead finger 2 heated to 300 to 350 ° C. again and cut to connect the semiconductor chip 1 and the lead finger 2.

【０００４】この種のボンディングワイヤーとしては、
導電性，ワイヤー伸び，ワイヤー強度，半導体チップと
の接合強度（以下「ボール接合強度」という）およびボ
ール形成性が要求されている。As this type of bonding wire,
Conductivity, wire elongation, wire strength, bonding strength with semiconductor chips (hereinafter referred to as "ball bonding strength") and ball formability are required.

【０００５】従来においては、上記ボンディングワイヤ
ーには金線が使用されている。Conventionally, a gold wire is used as the bonding wire.

【０００６】しかし、近年、低価格化および導電性向上
の点から、上記ボンディングワイヤーとして金線に代え
て銅線を用いる試みがなされている。However, in recent years, in order to reduce the cost and improve the conductivity, it has been attempted to use a copper wire as the bonding wire instead of the gold wire.

【０００７】[0007]

【発明が解決しようとする課題】しかし、銅線を用いて
熱圧接を行うと、ボール接合強度が低下する場合があ
り、一方ボール接合強度を改善しようとすると導電性が
低下してしまい、双方の特性を満足する銅ボンディング
ワイヤーは得られていなかった。However, when the copper wire is used for the thermocompression bonding, the ball bonding strength may be lowered, and on the other hand, if the ball bonding strength is attempted to be improved, the conductivity is lowered. No copper bonding wire satisfying the above characteristics was obtained.

【０００８】このため、従来のボンディングワイヤーを
用いて半導体装置の電気的結線を行った半導体装置とし
ての信頼性の低下などの各種の問題を有していた。Therefore, there are various problems such as deterioration in reliability as a semiconductor device in which the conventional bonding wire is used to electrically connect the semiconductor device.

【０００９】本発明は、上記問題点を解決し、ボール接
合強度が良好でかつ導電性が良好な銅系ボンディングワ
イヤーを用い、高い信頼性を有する半導体装置を提供す
ることを目的とする。An object of the present invention is to solve the above problems and to provide a semiconductor device having high reliability by using a copper-based bonding wire having good ball bonding strength and good conductivity.

【００１０】[0010]

【課題を解決するための手段及び作用】本発明者らは、
まずボンディングワイヤーについて鋭意研究した結果、
従来のボンディングワイヤーのボール接合強度の低下
は、主に形成されたボール中のガスにより生じることを
見出した。Means and Actions for Solving the Problems The present inventors have
First, as a result of earnest research on the bonding wire,
It has been found that the decrease in the ball bonding strength of the conventional bonding wire is caused mainly by the gas in the formed ball.

【００１１】すなわち、半導体チップ上にこのボールが
圧接された際、ガスによる空洞が接合部に発生，位置し
てしまい、ボール接合強度を低下させること、およびこ
の現象は特に銅線で発生しやすいことを見出した。That is, when the ball is pressed onto the semiconductor chip, a cavity due to gas is generated and located at the joint portion, which lowers the ball joint strength, and this phenomenon is particularly likely to occur in the copper wire. I found that.

【００１２】本発明は、これらの知見をもとに完成され
たものである。The present invention has been completed based on these findings.

【００１３】本発明の半導体装置は、電気的結線に、Ｍ
ｇ，Ｃａ，Ｔｉ，Ｈｆ，Ｖ，Ｎｂ，Ｔａ，Ｎｉ，Ｐｄ，
Ｐｔ，Ａｕ，Ｃｄ，Ｂ，Ａｌ，Ｉｎ，Ｓｉ，Ｇｅ，Ｐ
ｂ，Ｐ，Ｓｂ，Ｂｉ，ＳｅおよびＴｅから選択された１
種又は２種以上の元素を０．００１〜２重量％含有（但
し、Ｍｇ含有の場合のＭｇの量は０．０３重量％未満の
量、Ｂ，Ａｌ，ＳｉおよびＳｂのいずれか１種または２
種以上含有の場合の各元素の量はそれぞれ０．０３重量
％を越える量，Ｐｂ含有の場合のＰｂの量は０．１重量
％未満の量とする）し、残部が実質的に銅であるボンデ
ィングワイヤーを用いたことを特徴とする。In the semiconductor device of the present invention, M is used for electrical connection.
g, Ca, Ti, Hf, V, Nb, Ta, Ni, Pd,
Pt, Au, Cd, B, Al, In, Si, Ge, P
1 selected from b, P, Sb, Bi, Se and Te
0.001 to 2% by weight of one kind or two or more elements (however, when Mg is contained, the amount of Mg is less than 0.03% by weight, any one of B, Al, Si and Sb or Two
The amount of each element in the case of containing more than one species is more than 0.03% by weight, and the amount of Pb in the case of containing Pb is less than 0.1% by weight), and the balance is substantially copper. It is characterized by using a certain bonding wire.

【００１４】以下に、本発明の組成に関し説明する。The composition of the present invention will be described below.

【００１５】上記本発明の半導体装置に用いられるボン
ディングワイヤーに含有される、Ｍｇ，Ｃａ，Ｔｉ，Ｈ
ｆ，Ｖ，Ｎｂ，Ｔａ，Ｎｉ，Ｐｄ，Ｐｔ，Ａｕ，Ｃｄ，
Ｂ，Ａｌ，Ｉｎ，Ｓｉ，Ｇｅ，Ｐｂ，Ｐ，Ｓｂ，Ｂｉ，
ＳｅおよびＴｅから選択された１種又は２種以上の元素
（但し、Ｍｇ含有の場合のＭｇの量は０．０３重量％未
満の量、Ｂ，Ａｌ，ＳｉおよびＳｂのいずれか１種また
は２種以上含有の場合の各元素の量はそれぞれ０．０３
重量％を越える量，Ｐｂ含有の場合のＰｂの量は０．１
重量％未満の量とする）は、合金中のＨ，Ｏ，Ｎ，Ｃを
固定し、Ｈ2 ，Ｏ2 ，Ｎ2 ，ＣＯガスの発生を抑制する
ためのものである。Mg, Ca, Ti, H contained in the bonding wire used in the semiconductor device of the present invention.
f, V, Nb, Ta, Ni, Pd, Pt, Au, Cd,
B, Al, In, Si, Ge, Pb, P, Sb, Bi,
One or more elements selected from Se and Te (provided that the amount of Mg in the case of containing Mg is less than 0.03% by weight, any one of B, Al, Si and Sb or 2 The amount of each element is 0.03 when containing more than one species.
An amount exceeding 0.1% by weight, and an amount of Pb in the case of containing Pb is 0.1
The amount of less than wt% is for fixing H, O, N and C in the alloy and suppressing the generation of H 2 , O 2 , N 2 and CO gas.

【００１６】しかし、これらの含有量が多すぎると導電
性を低下させ、一方少なすぎると効果が生じにくい。こ
のため、上記含有元素の含有量は０．００１〜２重量と
した。さらに好ましくは０．０１〜１重量％である。However, if the content of these is too large, the conductivity is lowered, while if it is too small, the effect is unlikely to occur. Therefore, the content of the contained element is set to 0.001 to 2 weight. More preferably, it is 0.01 to 1% by weight.

【００１７】上記添加元素のうちでも、Ｍｇ０．０３重
量％未満，Ｈｆは、導電性をあまり低下させず、ガス発
生防止効果が高い。しかし、これらの含有量が多すぎる
と導電性を低下させ、一方少なすぎると効果が生じにく
い。このため、これらの好ましい含有量は０．０１〜１
重量％であり、さらに好ましくは０．０５〜０．２重量
％である。Among the above-mentioned additional elements, Mg less than 0.03% by weight and Hf do not significantly reduce the conductivity and have a high gas generation preventing effect. However, if the content of these is too large, the conductivity is lowered, while if it is too small, the effect is unlikely to occur. Therefore, the preferable content of these is 0.01 to 1
%, More preferably 0.05 to 0.2% by weight.

【００１８】上記本発明の半導体装置に使用されるボン
ディングワイヤーの含有元素は、その１種の含有におい
ても従来に比較し特性を向上することができるが、本発
明においてはそれらの元素を２種以上含有することによ
りボンディングワイヤーとして要求される全ての特性に
おいてより優れた特性を得ることが可能となると共に、
それを用いた半導体装置として優れた信頼性を得ること
ができる。The above-mentioned elements contained in the bonding wire used in the semiconductor device of the present invention can be improved in characteristics as compared with the conventional ones even if only one of them is contained. In the present invention, two kinds of these elements are included. By containing the above, it becomes possible to obtain more excellent characteristics in all the characteristics required as a bonding wire,
Excellent reliability can be obtained as a semiconductor device using the same.

【００１９】なお、本発明の半導体装置に使用されるボ
ンディングワイヤーは、被覆されて使用されても良い。The bonding wire used in the semiconductor device of the present invention may be coated and used.

【００２０】次に、本発明の半導体装置の製造方法の一
例に関し説明する。Next, an example of the method of manufacturing the semiconductor device of the present invention will be described.

【００２１】まず、本発明の半導体装置に使用されるボ
ンディングワイヤーは、成分元素を添加して溶解鋳造し
てインゴットを得る。次いで、このインゴットを７００
〜８００℃で熱間加工し、その後９００〜９６０℃で熱
処理し、急冷後、６０％以上の冷間加工を施し、４００
〜６００℃で熱処理を施す。それにより、本発明の半導
体装置に使用されるボンディングワイヤーが得られる。First, the bonding wire used in the semiconductor device of the present invention is obtained by adding component elements and melting and casting to obtain an ingot. Then ingot 700
Hot working at ~ 800 ° C, then heat treatment at 900 ~ 960 ° C, quenching, then cold working at 60% or more, 400
Heat treatment is performed at ˜600 ° C. Thereby, the bonding wire used for the semiconductor device of the present invention is obtained.

【００２２】そして、上記ボンディングワイヤーを用い
て、常法により半導体装置を製造する。例えば、この半
導体装置としては、少なくとも半導体チップとリードフ
ィンガを有すると共に、前記半導体チップとリードフィ
ンガとの結線に、上記ボンディングワイヤーを用いたも
のであれば良い。Then, a semiconductor device is manufactured by a conventional method using the bonding wire. For example, this semiconductor device may have at least a semiconductor chip and a lead finger, and the bonding wire may be used to connect the semiconductor chip and the lead finger.

【００２３】[0023]

【実施例】下記表１に示す成分のボンディングワイヤー
を製造し、その特性として導電性（IACS％），初期ボー
ル硬度（ビッカース硬度），ワイヤー強度（kg／m
m2 ），ワイヤー伸び（％），ボール接合強度（gr），
およびボール形成性を測定した。[Example] A bonding wire having the components shown in Table 1 below was manufactured, and its characteristics were conductivity (IACS%), initial ball hardness (Vickers hardness), and wire strength (kg / m).
m 2 ), wire elongation (%), ball joint strength (gr),
And ball formability was measured.

【００２４】初期ボール硬度は、ボール圧接時の硬度を
いい、硬度が低いほど圧接性は良好となる。The initial ball hardness means the hardness at the time of ball pressure contact, and the lower the hardness, the better the pressure contact property.

【００２５】また、ワイヤー伸びは、ボンディングワイ
ヤーが破断するまでの伸びをいい、伸びが大きいほど破
線率が低い。The wire elongation means the elongation until the bonding wire is broken, and the larger the elongation, the lower the broken line ratio.

【００２６】また、ボール接合強度は、熱圧着されてい
るボンディングワイヤーの接合部に、つり針状のカギを
かけ、真横に引っ張って、接合部をせん断破壊させるま
での加重を測定することにより得られる。The ball bonding strength is obtained by applying a hook-shaped key to the bonding portion of the bonding wire that is thermocompression bonded, pulling it directly to the side, and measuring the load until the bonding portion undergoes shear failure. To be

【００２７】また、ボール形成性は、ボンディングワイ
ヤーの先端がボール状に溶融した際、酸化するかどう
か、空洞ができるかどうか、ボール径のバラツキが大き
いか小さいかということを評価することにより判断され
る。The ball formability is judged by evaluating whether the tip of the bonding wire is oxidized when it is melted into a ball, whether a cavity is formed, and whether the variation in ball diameter is large or small. To be done.

【００２８】[0028]

【表１】 上記表１より、まず導電性に関しては、実施例１〜４お
よび比較例１がＡｕ線より高い導電率を示し、非常に有
効である。[Table 1] From the above Table 1, firstly, with respect to conductivity, Examples 1 to 4 and Comparative Example 1 show higher conductivity than the Au wire, and are very effective.

【００２９】また、初期ボール硬度に関しては、実施例
１〜４および比較例１，５がビッカース硬度９０以下を
示し、実用的である。Regarding the initial ball hardness, Examples 1 to 4 and Comparative Examples 1 and 5 show Vickers hardness of 90 or less and are practical.

【００３０】また、ワイヤー強度に関しては、実施例１
〜４および比較例１〜４がＡｕ線と同等あるいはそれよ
り大きい強度を示し、有用である。Regarding wire strength, Example 1
.About.4 and Comparative Examples 1 to 4 are useful because they show strength equal to or higher than that of Au wire.

【００３１】また、ワイヤー伸びに関しては、実施例１
〜４および比較例１，３がＡｕ線より大きい伸びを示
し、有用である。Regarding wire elongation, Example 1
.About.4 and Comparative Examples 1 and 3 exhibit elongations larger than the Au line and are useful.

【００３２】また、ボール接合強度に関しては、実施例
１〜４および比較例２，３，５がボール接合強度６５gr
以上であり、実用的である。Regarding the ball bonding strength, Examples 1 to 4 and Comparative Examples 2, 3 and 5 have a ball bonding strength of 65 gr.
Above, it is practical.

【００３３】また、ボール形成性に関しては、比較例４
以外は全て良好である。Regarding the ball formability, Comparative Example 4
Everything is good except for.

【００３４】以上の各特性を総合的に考慮すると、本発
明の実施例１〜４は比較例１〜５に比べて優れている。Considering each of the above characteristics comprehensively, Examples 1 to 4 of the present invention are superior to Comparative Examples 1 to 5.

【００３５】そして、半導体チップとリードフィンガを
有する半導体装置の半導体チップとリードフィンガとの
結線に、上記優れた特性を有するボンディングワイヤー
を用いたところ、信頼性の高い半導体装置を得ることが
できた。When a bonding wire having the above-mentioned excellent characteristics is used for connecting the semiconductor chip and the lead finger of the semiconductor device having the semiconductor chip and the lead finger, a highly reliable semiconductor device can be obtained. .

【００３６】[0036]

【発明の効果】本発明は、ボール接合強度が良好でかつ
導電性が良好な銅系ボンディングワイヤーを用い、高い
信頼性を有する半導体装置を提供することができる。The present invention can provide a semiconductor device having high reliability by using a copper-based bonding wire having a good ball bonding strength and a good conductivity.

【図面の簡単な説明】[Brief description of drawings]

【図１】半導体装置の一部切り欠き斜視図。FIG. 1 is a partially cutaway perspective view of a semiconductor device.

【符号の説明】[Explanation of symbols]

１…半導体チップ ２…リードフィンガー ３…ボンディングワイヤー ４…樹脂モールド 1 ... Semiconductor chip 2 ... Lead finger 3 ... Bonding wire 4 ... Resin mold

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 電気的結線に、Ｍｇ，Ｃａ，Ｔｉ，Ｈ
ｆ，Ｖ，Ｎｂ，Ｔａ，Ｎｉ，Ｐｄ，Ｐｔ，Ａｕ，Ｃｄ，
Ｂ，Ａｌ，Ｉｎ，Ｓｉ，Ｇｅ，Ｐｂ，Ｐ，Ｓｂ，Ｂｉ，
ＳｅおよびＴｅから選択された１種又は２種以上の元素
を０．００１〜２重量％含有（但し、Ｍｇ含有の場合の
Ｍｇの量は０．０３重量％未満の量、Ｂ，Ａｌ，Ｓｉお
よびＳｂのいずれか１種または２種以上含有の場合の各
元素の量はそれぞれ０．０３重量％を越える量，Ｐｂ含
有の場合のＰｂの量は０．１重量％未満の量とする）
し、残部が実質的に銅であるボンディングワイヤーを用
いたことを特徴とする半導体装置。1. An electrical connection for Mg, Ca, Ti, H
f, V, Nb, Ta, Ni, Pd, Pt, Au, Cd,
B, Al, In, Si, Ge, Pb, P, Sb, Bi,
0.001 to 2 wt% of one or more elements selected from Se and Te is contained (however, when Mg is contained, the amount of Mg is less than 0.03 wt%, B, Al, Si The amount of each element in the case of containing one or more of Sb and Sb is more than 0.03% by weight, and the amount of Pb in the case of containing Pb is less than 0.1% by weight).
A semiconductor device is characterized in that a bonding wire whose balance is substantially copper is used. 【請求項２】 半導体装置は、少なくとも半導体チップ
とリードフィンガを有すると共に、前記半導体チップと
リードフィンガとの結線に、ボンディングワイヤーを用
いたものである請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein the semiconductor device has at least a semiconductor chip and a lead finger, and a bonding wire is used to connect the semiconductor chip and the lead finger.
JP6095481A 1994-04-11 1994-04-11 Semiconductor device Expired - Lifetime JP2501303B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6095481A JP2501303B2 (en) 1994-04-11 1994-04-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6095481A JP2501303B2 (en) 1994-04-11 1994-04-11 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP59139108A Division JPS6120693A (en) 1984-07-06 1984-07-06 Bonding wire

Publications (2)

Publication Number Publication Date
JPH0770673A true JPH0770673A (en) 1995-03-14
JP2501303B2 JP2501303B2 (en) 1996-05-29

Family

ID=14138812

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP2501303B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150814A1 (en) 2009-06-24 2010-12-29 新日鉄マテリアルズ株式会社 Copper alloy bonding wire for semiconductor
JP2011003745A (en) * 2009-06-18 2011-01-06 Sumitomo Metal Mining Co Ltd Cu BONDING WIRE
CN103151091A (en) * 2011-12-01 2013-06-12 贺利氏材料科技公司 Doped 4N copper wires for bonding in microelectronics devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113613A (en) * 1974-07-24 1976-02-03 Seirei Ind HASHUKI
JPS57149744A (en) * 1981-02-12 1982-09-16 Heraeus Gmbh W C Extrafine wire
JPS58123846A (en) * 1982-01-20 1983-07-23 Nippon Mining Co Ltd Lead material for semiconductor apparatus
JPS59139662A (en) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp Alloy thin wire for wire bonding of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113613A (en) * 1974-07-24 1976-02-03 Seirei Ind HASHUKI
JPS57149744A (en) * 1981-02-12 1982-09-16 Heraeus Gmbh W C Extrafine wire
JPS58123846A (en) * 1982-01-20 1983-07-23 Nippon Mining Co Ltd Lead material for semiconductor apparatus
JPS59139662A (en) * 1983-01-31 1984-08-10 Mitsubishi Metal Corp Alloy thin wire for wire bonding of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003745A (en) * 2009-06-18 2011-01-06 Sumitomo Metal Mining Co Ltd Cu BONDING WIRE
WO2010150814A1 (en) 2009-06-24 2010-12-29 新日鉄マテリアルズ株式会社 Copper alloy bonding wire for semiconductor
KR20120031005A (en) 2009-06-24 2012-03-29 신닛테츠 마테리알즈 가부시키가이샤 Copper alloy bonding wire for semiconductor
US9427830B2 (en) 2009-06-24 2016-08-30 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor
CN103151091A (en) * 2011-12-01 2013-06-12 贺利氏材料科技公司 Doped 4N copper wires for bonding in microelectronics devices

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