JPH0749678Y2 - デコーダ回路 - Google Patents
デコーダ回路Info
- Publication number
- JPH0749678Y2 JPH0749678Y2 JP1987058299U JP5829987U JPH0749678Y2 JP H0749678 Y2 JPH0749678 Y2 JP H0749678Y2 JP 1987058299 U JP1987058299 U JP 1987058299U JP 5829987 U JP5829987 U JP 5829987U JP H0749678 Y2 JPH0749678 Y2 JP H0749678Y2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- transistor
- transistors
- decoder circuit
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 28
- 238000007599 discharging Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 12
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 102100037807 GATOR complex protein MIOS Human genes 0.000 description 1
- 101000950705 Homo sapiens GATOR complex protein MIOS Proteins 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Landscapes
- Static Random-Access Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987058299U JPH0749678Y2 (ja) | 1987-04-17 | 1987-04-17 | デコーダ回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987058299U JPH0749678Y2 (ja) | 1987-04-17 | 1987-04-17 | デコーダ回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63168697U JPS63168697U (enrdf_load_stackoverflow) | 1988-11-02 |
| JPH0749678Y2 true JPH0749678Y2 (ja) | 1995-11-13 |
Family
ID=30888753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987058299U Expired - Lifetime JPH0749678Y2 (ja) | 1987-04-17 | 1987-04-17 | デコーダ回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0749678Y2 (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6018892A (ja) * | 1983-07-12 | 1985-01-30 | Sharp Corp | 半導体デコ−ダ回路 |
-
1987
- 1987-04-17 JP JP1987058299U patent/JPH0749678Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63168697U (enrdf_load_stackoverflow) | 1988-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7009243B2 (en) | Semiconductor memory device | |
| JPS6041040Y2 (ja) | 論理装置 | |
| KR960008455B1 (ko) | 개량된 단일 비트선 구성의 정적램(sram) 장치 | |
| JP2005142289A (ja) | 半導体記憶装置 | |
| JP3061857B2 (ja) | 自己増幅ダイナミックｍｏｓトランジスタメモリセルを有するデバイス | |
| JPS5958695A (ja) | 持久型メモリ | |
| JPH05167042A (ja) | 読出専用メモリ | |
| JPS6041463B2 (ja) | ダイナミツク記憶装置 | |
| US4535255A (en) | Positive feedback amplifier circuitry | |
| JPS6061998A (ja) | リ−ドオンリメモリ用セル | |
| JPH0361279B2 (enrdf_load_stackoverflow) | ||
| KR890002812B1 (ko) | 씨모오스 디램에서 레이아웃이 최적화된 감지증폭기 | |
| KR930000759B1 (ko) | 다이나믹 메모리 | |
| JP3920550B2 (ja) | 不揮発性半導体記憶装置 | |
| US3585613A (en) | Field effect transistor capacitor storage cell | |
| JPH0217875B2 (enrdf_load_stackoverflow) | ||
| JPH10163346A (ja) | 半導体メモリのパワーライン配線構造 | |
| JPS58143498A (ja) | メモリ・アレイ | |
| JPH0749678Y2 (ja) | デコーダ回路 | |
| EP0032940B1 (en) | Igfet decoder circuit using series-coupled transistors | |
| US5101380A (en) | Semiconductor memory device | |
| JPS60226095A (ja) | 半導体記憶装置 | |
| JPH0786425A (ja) | ダイナミック型ｒａｍ | |
| KR930001733B1 (ko) | 반도체 기억장치 | |
| CN106469563B (zh) | 具有区域译码器的阵列架构 |