JPH0739249Y2 - 白色発光ダイオ−ド - Google Patents
白色発光ダイオ−ドInfo
- Publication number
- JPH0739249Y2 JPH0739249Y2 JP1986041152U JP4115286U JPH0739249Y2 JP H0739249 Y2 JPH0739249 Y2 JP H0739249Y2 JP 1986041152 U JP1986041152 U JP 1986041152U JP 4115286 U JP4115286 U JP 4115286U JP H0739249 Y2 JPH0739249 Y2 JP H0739249Y2
- Authority
- JP
- Japan
- Prior art keywords
- white light
- light emitting
- emitting diode
- type
- znse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986041152U JPH0739249Y2 (ja) | 1986-03-20 | 1986-03-20 | 白色発光ダイオ−ド |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986041152U JPH0739249Y2 (ja) | 1986-03-20 | 1986-03-20 | 白色発光ダイオ−ド |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62154662U JPS62154662U (enrdf_load_stackoverflow) | 1987-10-01 |
JPH0739249Y2 true JPH0739249Y2 (ja) | 1995-09-06 |
Family
ID=30855887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1986041152U Expired - Lifetime JPH0739249Y2 (ja) | 1986-03-20 | 1986-03-20 | 白色発光ダイオ−ド |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0739249Y2 (enrdf_load_stackoverflow) |
-
1986
- 1986-03-20 JP JP1986041152U patent/JPH0739249Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS62154662U (enrdf_load_stackoverflow) | 1987-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4984034A (en) | Non-single-crystalline light emitting semiconductor device matrix with insulation | |
KR950034864A (ko) | 발광 다이오드 장치와 그 장치의 제조방법 | |
US6459098B1 (en) | Window for light emitting diode | |
US6222208B1 (en) | Light-emitting diode and light-emitting diode array | |
JPH10242516A (ja) | 窒化ガリウム系化合物半導体発光素子及びその製造方法 | |
JPH0797659B2 (ja) | SiC青色発光ダイオード | |
US4868614A (en) | Light emitting semiconductor device matrix with non-single-crystalline semiconductor | |
US5898190A (en) | P-type electrode structure and a semiconductor light emitting element using the same structure | |
EP0411612A2 (en) | Semiconductor light-emitting device | |
JPH0739249Y2 (ja) | 白色発光ダイオ−ド | |
JP2005005421A (ja) | 酸化物半導体発光素子 | |
JP5044394B2 (ja) | 半導体層内に導電率が低減されている領域を形成する方法およびオプトエレクトロニクス半導体素子 | |
JPH0638265U (ja) | 窒化ガリウム系発光素子の電極 | |
JP3212686B2 (ja) | 半導体発光素子 | |
US3488542A (en) | Light emitting heterojunction semiconductor devices | |
JPH0459786B2 (enrdf_load_stackoverflow) | ||
JP3119513B2 (ja) | アバランシェ発光装置 | |
US5212396A (en) | Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations | |
KR960001192B1 (ko) | 발광다이오드 구조 | |
JPH0479273A (ja) | 光伝送電気信号増幅デバイス | |
Lawther et al. | Blue light emission in forward-biassed ZnS Schottky barrier diodes | |
TWI437730B (zh) | 發光二極體 | |
JP3080698B2 (ja) | 半導体装置の製造方法 | |
KR19980069642A (ko) | p형 오믹 접합용 물질 | |
JPS62101091A (ja) | 青色発光素子 |