JPH0736467B2 - Ceramic circuit board manufacturing method - Google Patents

Ceramic circuit board manufacturing method

Info

Publication number
JPH0736467B2
JPH0736467B2 JP3191184A JP19118491A JPH0736467B2 JP H0736467 B2 JPH0736467 B2 JP H0736467B2 JP 3191184 A JP3191184 A JP 3191184A JP 19118491 A JP19118491 A JP 19118491A JP H0736467 B2 JPH0736467 B2 JP H0736467B2
Authority
JP
Japan
Prior art keywords
metal
brazing material
circuit board
ceramic substrate
brazing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3191184A
Other languages
Japanese (ja)
Other versions
JPH0513920A (en
Inventor
克典 寺野
美幸 中村
康人 伏井
好彦 辻村
博人 堀内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP3191184A priority Critical patent/JPH0736467B2/en
Publication of JPH0513920A publication Critical patent/JPH0513920A/en
Publication of JPH0736467B2 publication Critical patent/JPH0736467B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/26Acidic compositions for etching refractory metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/30Acidic compositions for etching other metallic material

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、パワー半導体モジュー
ル等に使用される金属板をセラミックス基板に接合し、
半導体回路を形成してなるセラミックス回路基板の製造
法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention joins a metal plate used for a power semiconductor module or the like to a ceramic substrate,
The present invention relates to a method of manufacturing a ceramics circuit board formed with a semiconductor circuit.

【0002】[0002]

【従来の技術】従来より、金属とセラミックスを接合す
る方法として様々なものがあるが、特に、回路基板の製
造という点からは、Mo−Mn法、活性金属ろう付法、硫化
銅法、DBC 法、銅メタライス法が挙げられる。これらの
中で大電力モジュール基板の製造では、現在、金属とし
て銅を用い、セラミックスとの接合方法として活性金属
ろう付法又はDBC 法を用いることが主流となっており、
さらに高熱伝導性を有する窒化アルミニウムを絶縁基板
として使用することが普及されつつある。
2. Description of the Related Art Conventionally, there are various methods for joining a metal and a ceramic. Particularly, from the viewpoint of manufacturing a circuit board, the Mo-Mn method, the active metal brazing method, the copper sulfide method, the DBC method is used. Method and copper metallizing method. Among these, in the manufacture of high-power module boards, it is currently the mainstream to use copper as the metal and the active metal brazing method or the DBC method as the joining method with ceramics.
Furthermore, the use of aluminum nitride having high thermal conductivity as an insulating substrate is becoming widespread.

【0003】この銅板と窒化アルミニウム基板を接合す
る方法としては、活性金属ろう付法として、銅板と窒化
アルミニウム基板の間に活性金属を含むろう材を介在さ
せ、加熱処理し接合体を形成する方法(例えば特開昭60
-177634 号公報)や、DBC 法として、銅板と表面を酸化
処理してなる窒化アルミニウム基板とを銅の融点以下の
温度かつCu2O−O の共晶温度以上で加熱接合する方法
(例えば特開昭56-163093 号公報)などが知られてい
る。活性金属ろう付法はDBC 法に比べて次の利点があ
る。 (1)接合温度が低いので、AlN −Cuの熱膨張差によっ
て生じる残留応力が小さい。 (2)接合層が延性金属であるのでヒートショックやヒ
ートサイクルに対して耐久性が大きい。
As a method of joining the copper plate and the aluminum nitride substrate, as an active metal brazing method, a brazing material containing an active metal is interposed between the copper plate and the aluminum nitride substrate, and heat treatment is performed to form a joined body. (For example, JP-A-60
-177634), or a DBC method in which a copper plate and an aluminum nitride substrate whose surface is oxidized are heat-bonded at a temperature equal to or lower than the melting point of copper and equal to or higher than the eutectic temperature of Cu 2 O-O (for example, a special method). Kaisho 56-163093) is known. The active metal brazing method has the following advantages over the DBC method. (1) Since the bonding temperature is low, the residual stress caused by the difference in thermal expansion of AlN-Cu is small. (2) Since the bonding layer is a ductile metal, it has high durability against heat shock and heat cycles.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、この活
性金属ろう付法では、加熱処理により接合した際に絶縁
間、つまり銅板回路以外の電気絶縁性を要求される部分
にもろう材が流れ出し、銅板部をメッキ処理する際には
この上にメッキされパターン外メッキとなる欠点があ
る。この欠点を解決するため、本出願人は先に、窒化ア
ルミニウム基板に銅板回路部を形成する方法において、
銅板を接合しない部分にはろう材を塗布せず、その他の
部分にはすべてろう材を塗布し、銅板を加熱処理により
接合してなる接合体を、塩化第二銅、塩化第二鉄等でエ
ッチングして銅板回路を形成し、絶縁間に存在する不要
なろう材を、HF単独又はHNO3、H2SO4 及びHCl から選ば
れた少なくとも一種の無機酸とHFとの混酸などの薬液で
処理する方法(国際出願番号PCT/JP90/01502) を提案し
た。しかし、この方法では、絶縁間の不要なろう材の除
去効果が十分でないので、銅板部をメッキ処理する際に
歩留りが低下する。しかも、完全なろう材除去処理を行
うには長時間必要とするため、銅板を接合しているろう
材まで侵食され、接合強度や耐ヒートショック性、耐ヒ
ートサイクル性が低下する恐れがあった。
However, in this active metal brazing method, the brazing material flows out between insulations when joined by heat treatment, that is, in a portion other than the copper plate circuit where electrical insulation is required, and the copper plate When a part is plated, there is a drawback that it is plated on this part to form the pattern outside plating. In order to solve this drawback, the present applicant previously proposed in a method of forming a copper plate circuit portion on an aluminum nitride substrate,
Do not apply the brazing material to the part where the copper plate is not joined, apply the brazing material to all other parts, and join the copper plate by heat treatment to form a joined body with cupric chloride, ferric chloride, etc. The copper plate circuit is formed by etching, and the unnecessary brazing material existing between the insulation is treated with a chemical solution such as HF alone or a mixed acid of HF and at least one inorganic acid selected from HNO 3 , H 2 SO 4 and HCl. Proposed a treatment method (International Application No. PCT / JP90 / 01502). However, in this method, the effect of removing the unnecessary brazing material between the insulations is not sufficient, so that the yield decreases when the copper plate portion is plated. Moreover, since it takes a long time to completely remove the brazing material, even the brazing material joining the copper plates may be eroded, and the joining strength, heat shock resistance, and heat cycle resistance may decrease. .

【0005】本発明の目的は、絶縁間の不要なろう材の
除去不足によるパターン外メッキを改善して歩留りを向
上させ、しかも、ろう材除去処理による接合強度の低下
を少なくし、耐ヒートショック性、耐ヒートサイクル性
に優れたセラミックス回路基板の製造法を提供すること
にある。
The object of the present invention is to improve the yield of the pattern by improving the plating outside the pattern due to insufficient removal of the unnecessary brazing material between the insulations, and to reduce the decrease in the bonding strength due to the brazing material removal treatment and to reduce the heat shock resistance. To provide a method of manufacturing a ceramic circuit board having excellent heat resistance and heat cycle resistance.

【0006】[0006]

【課題を解決するための手段】すなわち、本発明は、ろ
う材ペーストをセラミックス基板上に塗布し、その上に
金属板を接合してから金属をエッチングした後、まずハ
ロゲン化水素及び/又はハロゲン化アンモニウムを含む
水溶液で、次いで無機酸と過酸化水素を含む水溶液で処
理することにより不要ろう材を除去するか、又は上記の
ように金属をエッチングした後に、ハロゲン化水素及び
/又はハロゲン化アンモニウム、無機酸及び過酸化水素
を含む水溶液で処理することによって不要なろう材を除
去することを特徴とするセラミックス回路基板の製造法
である。
That is, according to the present invention, a brazing filler metal paste is applied on a ceramic substrate, a metal plate is bonded onto the ceramic substrate, and then the metal is etched. After removing the unnecessary brazing material by treating with an aqueous solution containing ammonium halide and then with an aqueous solution containing inorganic acid and hydrogen peroxide, or after etching the metal as described above, hydrogen halide and / or ammonium halide A method for manufacturing a ceramics circuit board is characterized in that an unnecessary brazing material is removed by treating with an aqueous solution containing an inorganic acid and hydrogen peroxide.

【0007】以下、本発明をさらに詳細に説明する。The present invention will be described in more detail below.

【0008】通常、活性金属ろう付法によりセラミック
スと金属板を接合する場合、活性金属がセラミックス基
板と反応して界面で反応生成物を形成し、金属板とろう
材の金属成分が加熱時に相互に拡散して強固に接合す
る。この反応生成物を除去するために、本発明ではハロ
ゲン化水素及び/又はハロゲン化アンモニウムを用いる
が、特にハロゲンとしてはフッ素が望ましい。中でも安
全性の点からNH4Fが最適であるので、以下、それを例に
とってさらに説明する。
Usually, when the ceramic and the metal plate are joined by the active metal brazing method, the active metal reacts with the ceramic substrate to form a reaction product at the interface, and the metal components of the metal plate and the brazing material are mutually heated during heating. Diffuse into and bond firmly. In order to remove this reaction product, hydrogen halide and / or ammonium halide is used in the present invention, and fluorine is particularly preferable as the halogen. Among them, NH 4 F is the most suitable from the viewpoint of safety, so that will be further described below as an example.

【0009】NH4Fを含む溶液での処理条件としては、温
度は室温(18℃)〜95℃の範囲で不要なろう材を除去す
ることができるが、望ましくは40〜95℃特に60〜95℃で
ある。この条件においては、活性金属とセラミックス基
板との反応生成物の生成量が増加した場合でも容易に不
要なろう材を除去することができる。NH4F濃度としては
0.1 〜40重量%が好ましく、特に1〜20重量%更には1
〜10重量%が最適である。NH4F濃度が0.1 重量%よりも
少ないと不要なろう材の除去効果が小さく、一方、40重
量%よりも多いと金属回路部のろう材まで浸透してしま
い、必要な接合強度を保持できなくなる。しかも、セラ
ミックス基板と金属回路の接合している面積が減少する
ため、耐ヒートショック性、耐ヒートサイクル性も低下
し、金属回路部が剥離してしまう。
As the treatment conditions with the solution containing NH 4 F, the temperature can be room temperature (18 ° C.) to 95 ° C. to remove the unnecessary brazing filler metal, preferably 40 to 95 ° C., especially 60 to 90 ° C. 95 ° C. Under this condition, even if the amount of the reaction product of the active metal and the ceramic substrate increased, the unnecessary brazing material can be easily removed. NH 4 F concentration
0.1-40% by weight is preferred, especially 1-20% by weight and even 1
~ 10 wt% is optimal. If the NH 4 F concentration is less than 0.1% by weight, the effect of removing the unnecessary brazing material is small, while if it is more than 40% by weight, it penetrates into the brazing material in the metal circuit part, and the required bonding strength can be maintained. Disappear. In addition, since the area where the ceramics substrate and the metal circuit are joined is reduced, the heat shock resistance and heat cycle resistance are also lowered, and the metal circuit portion is peeled off.

【0010】本発明の最大の特徴は、金属板とろう材の
金属成分から成る合金成分を、ハロゲン化水素及び/又
はハロゲン化アンモニウムを含む水溶液で処理してか
ら、又はその処理と同時に、H2SO4 、HNO3、HCl 等の無
機酸とH2O2を含む溶液を用いて除去することにあり、無
機酸の中でもH2SO4 が最も望ましい。これは、HFの解離
定数がKa=10-4程度であることから、HF、NH4F等を含む
溶液には金属の溶解力が小さいため単独でろう材成分を
完全に除去することができないが、H2SO4 等の無機酸と
H2O2を含む溶液により金属成分を酸化させ溶解除去する
ことによって均一かつ短時間で除去することができる。
The most important feature of the present invention is that the alloy component consisting of the metal components of the metal plate and the brazing material is treated with an aqueous solution containing hydrogen halide and / or ammonium halide, or at the same time as the treatment. It is to be removed using a solution containing an inorganic acid such as 2 SO 4 , HNO 3 , and HCl and H 2 O 2 , and H 2 SO 4 is the most desirable among the inorganic acids. This is because the dissociation constant of HF is about Ka = 10 -4, so the solution containing HF, NH 4 F, etc. has a small metal-dissolving power, so that the brazing filler metal component cannot be completely removed by itself. But with inorganic acids such as H 2 SO 4
The metal component can be uniformly removed in a short time by oxidizing and dissolving the metal component with a solution containing H 2 O 2 .

【0011】H2SO4 等の無機酸の濃度は5〜40重量%が
好ましく、特に7〜30重量%更には10〜23重量%が最適
である。5重量%よりも少ないと合金成分の溶解力が小
さくなるため十分な除去効果は得られず、一方、40重量
%よりも多いと合金成分の溶解力が多くなり過ぎて金属
回路部まで溶解してしまう。
The concentration of the inorganic acid such as H 2 SO 4 is preferably 5 to 40% by weight, and most preferably 7 to 30% by weight and further 10 to 23% by weight. If it is less than 5% by weight, the dissolving power of the alloy component becomes small, so that a sufficient removal effect cannot be obtained. On the other hand, if it is more than 40% by weight, the dissolving power of the alloy component becomes too large and the metal circuit part is also dissolved. Will end up.

【0012】H2O2の濃度は1〜30重量%が好ましく、特
に5〜25重量%更には7〜15重量%が最適である。1重
量%よりも少ないと合金成分の溶解力が小さくなるため
十分な除去効果は得られず、30重量%よりも多いとH2O2
の分解が激しく液組成のコントロールが困難となり一定
条件で処理するのが困難となる。
The concentration of H 2 O 2 is preferably 1 to 30% by weight, particularly 5 to 25% by weight, more preferably 7 to 15% by weight. If it is less than 1% by weight, the dissolving power of the alloy components will be small, so a sufficient removal effect cannot be obtained, and if it is more than 30% by weight, H 2 O 2
It is difficult to control the composition of the liquid because of the severe decomposition of the liquid, and it becomes difficult to treat it under a certain condition.

【0013】本発明においては、以上のようなNH4F等の
ハロゲン化水素及び/又はハロゲン化アンモニウムによ
る処理とH2SO4 等の無機酸とH2O2を含む溶液での処理を
別々に行ってもよいが、これらの成分を含む溶液により
2つの処理を同時に行っても同様の効果が得られる。
In the present invention, the above treatment with hydrogen halide such as NH 4 F and / or ammonium halide and the treatment with a solution containing an inorganic acid such as H 2 SO 4 and H 2 O 2 are separately performed. However, the same effect can be obtained by simultaneously performing two treatments with a solution containing these components.

【0014】本発明における活性金属については、セラ
ミックス基板と反応してろう材の濡れ性が確保されれば
特に限定するものではないが、使用の容易さやセラミッ
クス基板との反応の容易さを考えれば、チタン、ジルコ
ニウム、ハフニウム及びこれらを主成分とする合金、あ
るいはろう材の融点までに分解してそれらを生成する化
合物が好ましく、特にチタン、チタン−ジルコニウム合
金、ジルコニウム及びこれらの水素化合物が最適であ
る。
The active metal in the present invention is not particularly limited as long as it reacts with the ceramic substrate to ensure the wettability of the brazing material, but considering the ease of use and the reaction with the ceramic substrate. , Titanium, zirconium, hafnium and alloys containing them as a main component, or compounds that decompose to produce them by the melting point of the brazing filler metal are preferable, and titanium, titanium-zirconium alloy, zirconium and hydrogen compounds thereof are most preferable. is there.

【0015】本発明で使用されるろう材の金属組成は特
に限定するものではないが、活性金属を除いた成分とし
ては、Ni、Cu、Ag−Cu、Ag−Niなどが挙げられる。ろう
材の溶融温度の低さや使用の容易さから考えると、特に
Ag−Cuを主成分とするものが好ましい。
The metal composition of the brazing filler metal used in the present invention is not particularly limited, but examples of components excluding the active metal include Ni, Cu, Ag-Cu, Ag-Ni and the like. Considering the low melting temperature of the brazing material and the ease of use,
Those containing Ag-Cu as a main component are preferable.

【0016】また、本発明における金属板についても、
その組成を特に限定するものではないが、銅、ニッケ
ル、アルミニウム及びこれらを主成分とする合金などが
一般的でる。パワー半導体モジュール基板への適用を考
えた場合、金属板として銅板を使用することが望まし
い。
Further, regarding the metal plate in the present invention,
Although the composition thereof is not particularly limited, copper, nickel, aluminum and alloys containing these as main components are generally used. Considering application to a power semiconductor module substrate, it is desirable to use a copper plate as the metal plate.

【0017】さらに、セラミックス基板としては、窒化
ケイ素、窒化アルミニウム、窒化ホウ素、酸化アルミニ
ウム、及びこれらの複合系を主成分とするものなどが挙
げられるが、酸化アルミニウムや窒化アルミニウムが最
も一般的である。特にパワー半導体モジュール基板への
適用を考えた場合、高熱伝導性を有する窒化アルミニウ
ムが最も好ましい。
Further, examples of the ceramic substrate include silicon nitride, aluminum nitride, boron nitride, aluminum oxide, and those containing a composite system of these as a main component, but aluminum oxide and aluminum nitride are the most common. . Especially when considering application to a power semiconductor module substrate, aluminum nitride having high thermal conductivity is most preferable.

【0018】本発明での接合は通常の活性金属ろう付法
であり、真空下又は不活性雰囲気下で行なわれる。活性
金属と反応容易な雰囲気は好ましくなく、特に高温では
活性が十分に保てる雰囲気が必要である。
The joining in the present invention is a usual active metal brazing method and is performed under vacuum or in an inert atmosphere. An atmosphere that easily reacts with the active metal is not preferable, and an atmosphere capable of sufficiently maintaining the activity is required especially at a high temperature.

【0019】なお、本発明における「不要なろう材」と
は、回路間、縁面及び側面に存在する活性金属ろう材を
意味し、残存することによって回路間及び基板表裏の絶
縁抵抗を妨げるものである。
The "unnecessary brazing material" in the present invention means an active metal brazing material existing between circuits, on an edge surface and a side surface, and by remaining, it hinders the insulation resistance between the circuits and between the front and back surfaces of the substrate. Is.

【0020】[0020]

【実施例】以下、実施例と比較例をあげてさらに具体的
に本発明を説明する。
EXAMPLES The present invention will be described in more detail with reference to Examples and Comparative Examples.

【0021】実施例1〜12、比較例1〜2 重量割合で、銀粉末72部、銅粉末28部、金属ジルコニウ
ム粉末5部及びテレピネオール15部と有機バインダーと
してポリイソブチルメタアクリレートのトルエン溶液を
固形分で1.5 部加えてよく混練し、ろう材ペーストを調
整した。このろう材ペーストを70×40×0.65mmの窒化ア
ルミニウム基板の両面にスクリーン印刷した。
Examples 1 to 12 and Comparative Examples 1 to 2 72 parts by weight of silver powder, 28 parts of copper powder, 5 parts of metal zirconium powder, 15 parts of terpineol and a toluene solution of polyisobutyl methacrylate as an organic binder were solidified in a weight ratio. Then, 1.5 parts of the mixture was added and kneaded well to prepare a brazing paste. This brazing paste was screen-printed on both sides of a 70 × 40 × 0.65 mm aluminum nitride substrate.

【0022】次に、この基板を150 ℃で5分間乾燥後、
両面に70×40×0.25mmの銅板を接触配置し、炉に投入し
た。この試料をまず高純度窒素ガス気流中400 ℃で熱処
理して有機成分を十分除去後、10℃/min で880 ℃まで
昇温し、1×10-6torr 下、880 ℃で20分間加熱接合
し、更に2℃/min の降温速度で室温まで冷却して接合
体とした。
Next, after drying this substrate at 150 ° C. for 5 minutes,
A 70 × 40 × 0.25 mm copper plate was placed in contact with both sides and placed in a furnace. This sample was first heat-treated at 400 ° C in a high-purity nitrogen gas stream to sufficiently remove organic components, then heated to 880 ° C at 10 ° C / min, and heat-bonded at 880 ° C for 20 minutes at 1 × 10 -6 torr. Then, it was further cooled to room temperature at a temperature decrease rate of 2 ° C./min to obtain a joined body.

【0023】この接合体の銅板上に紫外線硬化型のエッ
チングレジストをスクリーン印刷機で回路パターン上に
塗布後、塩化第二銅溶液を用いてエッチング処理を行っ
た。
An ultraviolet-curable etching resist was applied on the circuit pattern on the copper plate of the joined body by a screen printing machine, and then an etching treatment was performed using a cupric chloride solution.

【0024】次に、上記エッチング処理品を不要なろう
材除去の第1処理として、HF又はNH4Fの1〜10重量%溶
液で70℃、15分間処理し、更に第2処理として、H2S
O4 、HNO3及びHCl のうち、1種を8〜30重量%及びH2O
24〜15重量%の混合溶液で50℃、5分間処理した。
Next, as a first treatment for removing the unnecessary brazing material, the above-mentioned etching-treated product is treated with a 1-10 wt% solution of HF or NH 4 F at 70 ° C. for 15 minutes, and as a second treatment, H 2 2 S
One of O 4 , HNO 3 and HCl is 8 to 30 wt% and H 2 O
It was treated with a mixed solution of 24 to 15% by weight at 50 ° C. for 5 minutes.

【0025】各試料は、ろう材除去状態をチェック後、
以下に従う接合強度を測定した。また、同様に製作した
試料について、耐ヒートサイクル性(気中)及び耐ヒー
トショック性(液中)のテストを行い、電極の剥離状態
を観察した。それらの結果を表1に示す。
For each sample, after checking the brazing material removal state,
The bond strength was measured according to the following. Further, the samples produced in the same manner were tested for heat cycle resistance (in air) and heat shock resistance (in liquid), and the peeled state of the electrodes was observed. The results are shown in Table 1.

【0026】(1)ろう材除去状態評価 方法:目視による 基準:○:完全に除去 △:部分的に残留 ×:全体的に残留(1) Evaluation of brazing material removal state Method: Visual reference: ◯: Completely removed Δ: Partially retained ×: Entirely retained

【0027】(2)ピール強度(接合強度) 測定機器:プッシュブルゲージIMADA 製DPS II 20R 測定条件:引張速度;50mm/min(2) Peel strength (joint strength) Measuring equipment: Push Bull Gauge IMADA DPS II 20R Measuring conditions: Tensile speed; 50 mm / min

【0028】(3)耐ヒートサイクル性 測定機器:ロータリー熱衝撃試験機 八島製作所製 TS
ER-2252-A 測定条件:(気中)−40℃×30分→25℃×10分→125℃
×30分→25℃×10分 500サイクル 基準:A:電極剥離なし B:一部電極剥離 C:完全に電極剥離
(3) Heat cycle resistance measuring instrument: rotary thermal shock tester Yashima Seisakusho TS
ER-2252-A Measurement condition: (in air) -40 ℃ × 30 minutes → 25 ℃ × 10 minutes → 125 ℃
× 30 minutes → 25 ° C × 10 minutes 500 cycles Standard: A: No electrode peeling B: Partial electrode peeling C: Complete electrode peeling

【0029】(4)耐ヒートショック性 測定機器:冷熱衝撃試験器 八島製作所 TSEL-2200-2 測定条件:(液中)0℃×10分→ 100℃×10分 300サイ
クル 基準:A:電極剥離なし B:一部電極剥離 C:完全に電極剥離
(4) Heat shock resistance Measuring instrument: thermal shock tester Yashima Seisakusho TSEL-2200-2 Measuring condition: (in liquid) 0 ° C × 10 minutes → 100 ° C × 10 minutes 300 cycles Standard: A: electrode peeling None B: Partial electrode peeling C: Complete electrode peeling

【0030】[0030]

【表1】 [Table 1]

【0031】実施例13〜24 実施例1と同様にして塩化第二銅によってエッチング処
理をして得られた試料を、表2に示す組成の溶液で50℃
×15分処理を行い、実施例1と同様な評価を行った。そ
れらの結果を表2に示す。
Examples 13 to 24 Samples obtained by etching with cupric chloride in the same manner as in Example 1 were treated with a solution having the composition shown in Table 2 at 50 ° C.
For 15 minutes, the same evaluation as in Example 1 was performed. The results are shown in Table 2.

【0032】[0032]

【表2】 [Table 2]

【0033】[0033]

【発明の効果】本発明によれば、金属板とセラミックス
基板との接合状態を低下させたり、また耐ヒートショッ
ク性や耐ヒートサイクル性をも低下させることなく、不
要なろう材成分を容易に除去し、パターン外メッキをな
くすることができるので歩留りの向上を図ることができ
る。
EFFECTS OF THE INVENTION According to the present invention, unnecessary brazing filler metal components can be easily removed without lowering the bonding state between the metal plate and the ceramics substrate and also lowering the heat shock resistance and heat cycle resistance. Since it can be removed and plating outside the pattern can be eliminated, the yield can be improved.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 堀内 博人 福岡県大牟田市新開町1 電気化学工業株 式会社 大牟田工場内 審査官 沼沢 幸雄 (56)参考文献 特開 平3−18087(JP,A) 特開 昭63−47382(JP,A) 特開 平2−209789(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroto Horiuchi 1 Shinkai-cho, Omuta City, Fukuoka Prefecture Inspector, Omuta Factory, an electrochemical industry company Yukio Numasawa (56) Reference JP-A-3-18087 (JP, A) ) JP-A-63-47382 (JP, A) JP-A-2-209789 (JP, A)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ろう材ペーストをセラミックス基板上に
塗布し、その上に金属板を接合してから金属をエッチン
グした後、まずハロゲン化水素及び/又はハロゲン化ア
ンモニウムを含む水溶液で、次いで無機酸と過酸化水素
を含む水溶液で処理することによって不要なろう材を除
去することを特徴とするセラミックス回路基板の製造
法。
1. A brazing material paste is applied onto a ceramic substrate, a metal plate is bonded onto the ceramic substrate, the metal is etched, and then an aqueous solution containing hydrogen halide and / or ammonium halide is prepared, followed by an inorganic acid. And a method of manufacturing a ceramics circuit board, which comprises removing unnecessary brazing filler metal by treating with an aqueous solution containing hydrogen peroxide.
【請求項2】 ろう材ペーストをセラミックス基板上に
塗布し、その上に金属板を接合してから金属をエッチン
グした後、ハロゲン化水素及び/又はハロゲン化アンモ
ニウム、無機酸及び過酸化水素を含む水溶液で処理する
ことによって不要なろう材を除去することを特徴とする
セラミックス回路基板の製造法。
2. A brazing material paste is applied on a ceramic substrate, a metal plate is bonded onto the ceramic substrate, the metal is etched, and then a hydrogen halide and / or ammonium halide, an inorganic acid and hydrogen peroxide are included. A method for manufacturing a ceramics circuit board, which comprises removing unnecessary brazing filler metal by treating with an aqueous solution.
JP3191184A 1991-07-05 1991-07-05 Ceramic circuit board manufacturing method Expired - Lifetime JPH0736467B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3191184A JPH0736467B2 (en) 1991-07-05 1991-07-05 Ceramic circuit board manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3191184A JPH0736467B2 (en) 1991-07-05 1991-07-05 Ceramic circuit board manufacturing method

Publications (2)

Publication Number Publication Date
JPH0513920A JPH0513920A (en) 1993-01-22
JPH0736467B2 true JPH0736467B2 (en) 1995-04-19

Family

ID=16270301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3191184A Expired - Lifetime JPH0736467B2 (en) 1991-07-05 1991-07-05 Ceramic circuit board manufacturing method

Country Status (1)

Country Link
JP (1) JPH0736467B2 (en)

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